Sampling device for granular polycrystalline silicon detection

Abstract

The utility model relates to the technical field of granular polycrystalline silicon sampling, and discloses a sampling device for granular polycrystalline silicon detection, which comprises a melting bin, the melting bin is in a hollow cylindrical shape, the bottom of the melting bin is fixedly connected with a lifting rod, a base rod is fixedly connected in a cavity of the melting bin, and the top of the base rod is fixedly connected with a melting table. A sampling structure is arranged in a cavity of the melting bin and comprises a lower piston plate, an upper piston plate and a seed crystal chuck, the lower piston plate is slidably connected into the cavity of the melting bin, the upper piston plate is also slidably connected into the cavity of the melting bin, and the seed crystal chuck is movably connected to the wall face of the upper piston plate. The sampling structure can sample liquefied polycrystalline silicon on the top of the melting table.

Description

Technical Field

[0001] The utility model belongs to the technical field of granular polysilicon sampling, and specifically relates to a sampling device for detecting granular polysilicon. Background Art

[0002] The prior art (application number: CN201710090785.X) discloses a polysilicon detection sampling device, comprising: a bracket; a containing tube vertically fixed on the bracket, for containing granular silicon material, the containing tube having an upper port; a seed crystal chuck located in the containing tube and an upper shaft having one end connected to the seed crystal chuck and extending from the upper port to the outside of the containing tube.

[0003] In the prior art, after sampling the polysilicon, the device needs to be opened to obtain the collected polysilicon rods. This process is rather cumbersome, which increases the working pressure. It is also troublesome when repeated sampling of one type of polysilicon in the device is required, and the device needs to be repeatedly opened and closed, which increases the working pressure and working time.

[0004] In view of this, the present utility model is proposed. Utility Model Content

[0005] In order to solve the above technical problems, the basic concept of the technical solution adopted by the utility model is:

[0006] A sampling device for detecting granular polysilicon comprises a melting chamber, which is in a hollow cylindrical shape. A lifting rod is fixedly connected to the bottom of the melting chamber, a base rod is fixedly connected in the cavity of the melting chamber, and a melting table is fixedly connected to the top of the base rod. A sampling structure is arranged in the cavity of the melting chamber, and the sampling structure comprises a lower piston plate, an upper piston plate and a seed crystal chuck. The lower piston plate is slidably connected in the cavity of the melting chamber, and the upper piston plate is also slidably connected in the cavity of the melting chamber. The seed crystal chuck is movably connected to the wall of the upper piston plate. The sampling structure can sample the liquefied polysilicon on the top of the melting table.

[0007] As a preferred embodiment of the utility model, the tops of the lower piston plate and the upper piston plate are both circular, and the sizes of the lower piston plate and the upper piston plate are consistent with those in the melting chamber.

[0008] As a preferred embodiment of the utility model, the sampling structure also includes a bottom rod, a through groove, a movable groove and a base groove. The bottom rod is fixedly connected to the bottom of the lower piston plate, and the bottom of the bottom rod also passes through the bottom of the melting chamber and is fixedly connected to the top of the lifting rod. The through groove is opened at the top of the center of the circle of the lower piston plate, the movable groove is opened at the bottom center position of the upper piston plate, the base groove is opened at the top center position of the circle of the upper piston plate, the base groove and the movable groove are connected, and the base rod can slide in the through groove.

[0009] As a preferred embodiment of the utility model, the sampling structure also includes an upper rod, a bottom groove, an upper groove and a suction groove. The upper rod is symmetrically fixedly connected to the top of the upper piston plate, the bottom groove is penetrated through the bottom of the cavity of the melting chamber, the bottom rod can pass through the bottom groove, the upper groove is symmetrically penetrated through the top of the melting chamber, and the suction groove is penetrated through the center position of the top of the melting chamber.

[0010] As a preferred embodiment of the present utility model, the position and number of the upper grooves are consistent with those of the upper rod, the upper rod can pass through the upper grooves, and the upper grooves can adapt to the size of the upper rod.

[0011] As a preferred embodiment of the utility model, the sampling structure also includes a piston and a connecting column. The piston is clamped in the extraction groove, the connecting column is fixedly connected to the bottom of the piston, the seed crystal chuck is threadedly connected to the bottom of the connecting column, the piston can pass through the extraction groove, the bottom of the piston can be in the base groove, the connecting column can pass through the piston, and the size of the connecting column is smaller than that of the piston.

[0012] As a preferred embodiment of the utility model, the melting table is in the shape of a hollow cylinder with an open top, the bottom wall surface of the melting table cavity is gradually lowered toward the center, and the bottom of the seed crystal chuck is aligned with the center of the melting table cavity.

[0013] Compared with the prior art, the utility model has the following beneficial effects:

[0014] 1. By setting up a sampling structure, the polysilicon crystal rod that has been sampled can be obtained without opening the melting chamber, because the sampling structure uses the principle of the piston to slowly move the upper piston plate. When the upper piston plate moves slowly, it will drive the sampled polysilicon crystal to condense, and after sampling, the piston can be directly pulled out from the top of the melting chamber, so as to bring the polysilicon crystal rod condensed on the wall of the seed crystal chuck out of the melting chamber cavity, and when sampling needs to be continued, it is only necessary to insert the piston into the melting chamber cavity to continue sampling. Therefore, compared with the existing technology, this solution is more convenient to use, with lower working pressure and less working time.

[0015] 2. By setting up a melting table that can gather the molten polysilicon liquid, the seed crystal chuck can be faster in sampling the polysilicon liquid, because the bottom of the seed crystal chuck is aligned with the center of the melting table cavity, and the polysilicon liquid will gather toward the center of the melting table cavity, thereby making the seed crystal chuck faster in collecting polysilicon crystals.

[0016] The specific implementation modes of the present utility model are further described in detail below in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In the attached picture:

[0018] Figure 1 It is a three-dimensional diagram of the utility model;

[0019] Figure 2 This is a perspective view of the melting chamber of the utility model;

[0020] Figure 3 This is a disassembled diagram of the structure inside the melting chamber of the utility model;

[0021] Figure 4 This is a disassembled view of the piston and the upper piston plate of the utility model.

[0022] In the figure: 20, melting chamber; 21, lifting rod; 22, base rod; 23, melting table; 30, lower piston plate; 31, bottom rod; 32, through groove; 33, upper piston plate; 34, movable groove; 35, base groove; 36, upper rod; 37, bottom groove; 38, upper groove; 39, extraction groove; 40, movable column; 41, connecting column; 42, seed crystal chuck. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. The following embodiments are used to illustrate the utility model.

[0024] like Figure 1 and Figure 2 As shown, a sampling device for detecting granular polysilicon includes a melting chamber 20, which is in a hollow cylindrical shape. A lifting rod 21 is fixedly connected to the bottom of the melting chamber 20, a base rod 22 is fixedly connected in the cavity of the melting chamber 20, and a melting table 23 is fixedly connected to the top of the base rod 22. The melting table 23 is equipped with a heating rod that can generate heat. The lifting rod 21 and the heating rods on the wall of the melting table 23 are electrically connected to a power source. Part of the front wall of the melting chamber 20 is in the shape of transparent heat-resistant glass. The front wall of the melting chamber 20 can also be opened. This is an existing technology and will not be described in detail here.

[0025] like Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, a sampling structure is provided in the cavity of the melting chamber 20, and the sampling structure includes a lower piston plate 30, an upper piston plate 33 and a seed crystal chuck 42. The lower piston plate 30 is slidably connected in the cavity of the melting chamber 20, and the upper piston plate 33 is also slidably connected in the cavity of the melting chamber 20. The seed crystal chuck 42 is movably connected to the wall of the upper piston plate 33. The sampling structure can sample the liquefied polysilicon on the top of the melting table 23.

[0026] like Figure 1 , Figure 2 , Figure 3 and Figure 4As shown, the tops of the lower piston plate 30 and the upper piston plate 33 are both circular, and the sizes of the lower piston plate 30 and the upper piston plate 33 are consistent with the cavity of the melting chamber 20. The sampling structure also includes a bottom rod 31, a through groove 32, a live groove 34 and a base groove 35. The bottom rod 31 is fixedly connected to the bottom of the lower piston plate 30, and the bottom of the bottom rod 31 also passes through the bottom of the cavity of the melting chamber 20 and is fixedly connected to the top of the lifting rod 21. The through groove 32 runs through and is opened at the top of the center of the circle of the lower piston plate 30, the live groove 34 is opened at the bottom center position of the upper piston plate 33, and the base groove 35 is opened at the top center position of the upper piston plate 33. The base groove 35 and the live groove 34 are connected, and the base rod 22 can slide in the through groove 32. The sampling structure also includes an upper rod 36, a bottom groove 37, an upper groove 38 and a draw groove 39. The upper rod 36 is symmetrically fixed and connected The bottom groove 37 is connected to the top of the upper piston plate 33, and is opened in the bottom of the cavity of the melting chamber 20. The bottom rod 31 can pass through the bottom groove 37. The upper groove 38 is symmetrically opened in the top of the melting chamber 20. The extraction groove 39 is opened in the center of the top of the melting chamber 20. The position and number of the upper groove 38 are consistent with those of the upper rod 36. The upper rod 36 can pass through the upper groove 38. The upper groove 38 can adapt to the size of the upper rod 36. The sampling structure also includes a piston 40 and a connecting column 41. The piston 40 is clamped in the extraction groove 39. The connecting column 41 is fixedly connected to the bottom of the piston 40. The seed crystal chuck 42 is threadedly connected to the bottom of the connecting column 41. The piston 40 can pass through the extraction groove 39. The bottom of the piston 40 can be in the base groove 35. The connecting column 41 can pass through the movable groove 34. The size of the connecting column 41 is smaller than that of the piston 40.

[0027] During specific use, the front wall of the melting chamber 20 is opened. At this time, the granular polysilicon crystals to be sampled are placed in the cavity of the melting table 23 and the front wall of the melting chamber 20 is closed. The seed crystal chuck 42 and the connecting column 41 are then threaded together and the combined seed crystal chuck 42, the connecting column 41 and the piston 40 are inserted into the cavity of the melting chamber 20 from the groove 39. At this time, the lifting rod 21 is controlled to make the lifting rod 21 drive the lower piston plate 30 to the bottom of the cavity of the melting chamber 20. After the adjustment, the power is turned on. When the power is turned on, the heating rod on the wall of the melting table 23 can heat and melt the polysilicon crystals in the cavity of the melting table 23. At this time, the molten polysilicon crystals can climb along the bottom of the seed crystal chuck 42. When the polysilicon crystals climb, the lifting rod 21 is controlled to slowly lift the bottom rod 31. At this time, the bottom rod 31 can drive the lower piston plate 30 to move slowly during the movement. When the piston plate 33 is moved, it will slowly move upwards due to the air pressure. When the upper piston plate 33 moves upwards, it can drive the upper rod 36 and the plunger 40 to move at the same time. The upper rod 36 can move in the upper groove 38. The plunger 40 can drive the connecting column 41 and the seed crystal chuck 42 to move at the same time when moving. When the seed crystal chuck 42 moves, the liquid polysilicon crystals on its wall will condense as the temperature decreases. After the polysilicon crystals are condensed, the plunger 40 is withdrawn from the top of the melting chamber 20. When the plunger 40 is withdrawn, the connecting column 41 and the seed crystal chuck 42 are separated in the melting chamber 20 cavity at the same time. The seed crystal chuck 42 can drive the condensed polysilicon crystal rods to separate from the melting chamber 20 cavity at the same time. At this point, the polysilicon crystal sampling is completed. When it is necessary to sample the polysilicon crystal liquid in the melting chamber 20 cavity, it is only necessary to insert the plunger 40, the connecting column 41 and the seed crystal chuck 42 into the extraction groove 39 again.

[0028] To summarize, by setting up a sampling structure, it is possible to obtain sampled polysilicon crystal rods without opening the melting chamber 20, because the sampling structure uses the principle of a piston to slowly move the upper piston plate 33. When the upper piston plate 33 moves slowly, it will drive the sampled polysilicon crystals to condense, and after sampling, the piston 40 can be directly pulled out from the top of the melting chamber 20, so that the polysilicon crystal rod condensed on the wall of the seed crystal chuck 42 can be brought out of the melting chamber 20 cavity, and when sampling needs to be continued, it is only necessary to insert the piston 40 into the melting chamber 20 cavity to continue sampling. Therefore, compared with the prior art, this solution is more convenient to use, with lower working pressure and less working time.

[0029] like Figure 2 As shown, the melting table 23 is in the shape of a hollow cylinder with an open top, the bottom wall surface of the cavity of the melting table 23 is in a shape that gradually decreases toward the center of the circle, and the bottom of the seed crystal chuck 42 is aligned with the center of the cavity of the melting table 23;

[0030] During specific use, the polysilicon crystal liquid melted in the cavity of the melting table 23 can move and gather toward the center of the cavity of the melting table 23;

[0031] In summary, by providing a melting table 23 that can gather the molten polysilicon liquid, the seed crystal chuck 42 can be faster in sampling the polysilicon liquid, because the bottom of the seed crystal chuck 42 is aligned with the center of the circle in the melting table 23 cavity, and the polysilicon liquid will gather toward the center of the circle in the melting table 23 cavity, thereby making the seed crystal chuck 42 faster in collecting polysilicon crystals.

[0032] Working principle: open the front wall of the melting chamber 20, place the granular polysilicon crystals to be sampled in the cavity of the melting table 23, close the front wall of the melting chamber 20, and then thread the seed crystal chuck 42 and the connecting column 41 together, insert the assembled seed crystal chuck 42, the connecting column 41 and the piston 40 from the groove 39 into the cavity of the melting chamber 20, and then control the lifting rod 21 to make the lifting rod 21 drive the lower piston plate 30 to the bottom of the cavity of the melting chamber 20. After the adjustment, turn on the power. When the power is turned on, the heating rod on the wall of the melting table 23 can heat and melt the polysilicon crystals in the cavity of the melting table 23. At this time, the molten polysilicon crystals can climb along the bottom of the seed crystal chuck 42. When the polysilicon crystals climb, control the lifting rod 21 to slowly lift the bottom rod 31. At this time, the bottom rod 31 can When moving, it can drive the lower piston plate 30 to move slowly. When the lower piston plate 30 moves upward, the upper piston plate 33 will move slowly upward due to the air pressure. When the upper piston plate 33 moves upward, it can drive the upper rod 36 and the piston 40 to move at the same time. The upper rod 36 can move in the upper groove 38. The piston 40 can drive the connecting column 41 and the seed crystal chuck 42 to move at the same time when moving. When the seed crystal chuck 42 moves, the liquid polysilicon crystals on its wall will condense as the temperature decreases. After the polysilicon crystals are condensed, the piston 40 will be pulled out from the top of the melting chamber 20. When the piston 40 is pulled out, it will drive the connecting column 41 and the seed crystal chuck 42 to separate in the cavity of the melting chamber 20 at the same time. The seed crystal chuck 42 can drive the condensed polysilicon crystal rods to separate from the cavity of the melting chamber 20 at the same time. At this point, the polysilicon crystal sampling is completed.

[0033] It is understood that the present invention is described by some embodiments, and those skilled in the art are aware that various changes or equivalent substitutions may be made to these features and embodiments without departing from the spirit and scope of the present invention. In addition, under the teachings of the present invention, these features and embodiments may be modified to adapt to specific circumstances and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are within the scope of protection of the present invention.

Claims

1. A sampling device for detecting granular polycrystalline silicon, comprising a melting chamber (20), the melting chamber (20) being in a hollow cylindrical shape, a lifting rod (21) being fixedly connected to the bottom of the melting chamber (20), a base rod (22) being fixedly connected in the cavity of the melting chamber (20), and a melting table (23) being fixedly connected to the top of the base rod (22), characterized in that: A sampling structure is arranged in the cavity of the melting chamber (20), and the sampling structure comprises a lower piston plate (30), an upper piston plate (33) and a seed crystal chuck (42). The lower piston plate (30) is slidably connected in the cavity of the melting chamber (20), and the upper piston plate (33) is also slidably connected in the cavity of the melting chamber (20). The seed crystal chuck (42) is movably connected to the wall surface of the upper piston plate (33). The sampling structure can sample the liquefied polysilicon on the top of the melting table (23).

2. The sampling device for detecting granular polycrystalline silicon according to claim 1, characterized in that: The tops of the lower piston plate (30) and the upper piston plate (33) are both circular, and the sizes of the lower piston plate (30) and the upper piston plate (33) are consistent with the inner cavity of the melting chamber (20).

3. The sampling device for detecting granular polycrystalline silicon according to claim 1, characterized in that: The sampling structure also includes a bottom rod (31), a through groove (32), an active groove (34) and a base groove (35). The bottom rod (31) is fixedly connected to the bottom of the lower piston plate (30). The bottom of the bottom rod (31) also passes through the bottom of the melting chamber (20) and is fixedly connected to the top of the lifting rod (21). The through groove (32) passes through the top of the circle center of the lower piston plate (30). The active groove (34) is opened at the bottom center position of the upper piston plate (33). The base groove (35) is opened at the top center position of the upper piston plate (33). The base groove (35) and the active groove (34) are connected, and the base rod (22) can slide in the through groove (32).

4. The sampling device for detecting granular polycrystalline silicon according to claim 3, characterized in that: The sampling structure also includes an upper rod (36), a bottom groove (37), an upper groove (38) and a suction groove (39), wherein the upper rod (36) is symmetrically fixedly connected to the top of the upper piston plate (33), the bottom groove (37) is penetrated and opened at the bottom of the cavity of the melting chamber (20), the bottom rod (31) can pass through the bottom groove (37), the upper groove (38) is symmetrically penetrated and opened at the top of the melting chamber (20), and the suction groove (39) is penetrated and opened at the center position of the top circle of the melting chamber (20).

5. The sampling device for detecting granular polycrystalline silicon according to claim 4, characterized in that: The position and number of the upper grooves (38) are consistent with those of the upper rod (36). The upper rod (36) can pass through the upper grooves (38), and the upper grooves (38) can adapt to the size of the upper rod (36).

6. The sampling device for detecting granular polycrystalline silicon according to claim 4, characterized in that: The sampling structure also includes a piston (40) and a connecting rod (41). The piston (40) is clamped in the extraction groove (39), the connecting rod (41) is fixedly connected to the bottom of the piston (40), the seed crystal chuck (42) is threadedly connected to the bottom of the connecting rod (41), the piston (40) can pass through the extraction groove (39), the bottom of the piston (40) can be in the base groove (35), the connecting rod (41) can pass through the piston groove (34), and the size of the connecting rod (41) is smaller than that of the piston (40).

7. The sampling device for detecting granular polycrystalline silicon according to claim 1, characterized in that: The melting table (23) is in the shape of a hollow cylinder with an open top, the bottom wall surface of the cavity of the melting table (23) is in a shape that gradually decreases toward the center of the circle, and the bottom of the seed crystal chuck (42) is aligned with the center of the cavity of the melting table (23).

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