Chip crystal grain high-temperature test clamp and production equipment

Abstract

A chip crystal grain high-temperature test clamp comprises a crystal grain placing area which is provided with a common plate, a plurality of crystal grains are placed in the upper end face of the common plate, and a plurality of probes in contact with crystal grain anodes are further arranged above the common plate; the circuit arrangement area is provided with a burn-in board, a fuse is arranged on the burn-in board, and the burn-in board is connected with the probe through a wire; wherein each crystal grain is provided with one fuse and one probe; and each probe in contact with the crystal grains is connected with the fuse through a lead. The test fixture is simple in structure and easy to operate, unqualified crystal grains can be accurately and quickly found, and normal test results of other crystal grains are not affected; all the crystal grains are detected before packaging, so that the later packaging quality can be ensured; the test period can be shortened, and the test risk can be reduced. The utility model further provides production equipment provided with the test fixture.

Description

Technical Field

[0001] The present application belongs to the technical field of chip high temperature reliability testing, and in particular, relates to a chip crystal high temperature testing fixture and production equipment equipped with the testing fixture. Background Art

[0002] The high temperature reliability test of the chip is one of the important performance indicators of the chip, which refers to the high temperature reverse bias test (HTRB) of the chip, that is, adding reverse bias at high temperature, through the leakage current increase at high temperature, over time, to judge whether the device fails, thereby determining the reliability of the device.

[0003] Traditional HTRB testing is a post-chip packaging test, and the chip packaging cycle takes about 30 days, which is time-consuming and costly. In addition, if any chip grain has a problem due to unreasonable fixture design, it will affect the quality of all chip grains. It is impossible to accurately find which grain has a quality problem. The problem grain can only be tested after packaging, which seriously affects product quality. Summary of the invention

[0004] The present application provides a chip crystal high temperature test fixture and production equipment, which solves the technical problem in the prior art that problematic crystals cannot be accurately identified due to unreasonable fixture design.

[0005] In order to solve at least one of the above technical problems, the technical solution adopted in this application is:

[0006] A chip crystal high temperature test fixture, comprising:

[0007] A crystal grain placement area is provided with a common electrode plate, a plurality of crystal grains are placed on the upper end surface of the common electrode plate, and a plurality of detection needles in contact with the anodes of the crystal grains are also arranged above the common electrode plate;

[0008] A circuit layout area, which is equipped with an aging board, on which a fuse is arranged and connected to the detection needle through a wire;

[0009] Wherein, each die is equipped with one of the fuses and one of the detection needles; and each of the detection needles in contact with the die is connected to the fuse via a wire.

[0010] Furthermore, the other end of the fuse matched with the die is connected to the machine port through another wire.

[0011] Furthermore, a plurality of rows of grooves are constructed on the upper end surface of the common electrode plate and arranged along the length direction thereof, and a gel layer for fixing the crystal grains is constructed in the grooves.

[0012] Furthermore, a plurality of evenly distributed grains are arranged in each of the grooves.

[0013] Furthermore, a plurality of heat dissipation grooves are arranged in the lower end surface of the common electrode plate, and the heat dissipation grooves are arranged on the corresponding surface other than the groove;

[0014] Preferably, the heat dissipation slot is arranged in parallel with the groove and is constructed as a through-hole slot.

[0015] Furthermore, it also includes a fixing plate for mounting the detection needle, and the detection needle is configured to penetrate the thickness of the fixing plate.

[0016] Furthermore, a mounting hole for fixing the fixing plate is formed on the upper end surface of each common electrode plate. The mounting holes are arranged at both ends of each groove, and the fixing plate is connected to the common electrode plate through a connecting column.

[0017] Furthermore, all fuses matching the die in each of the grooves are arranged in the same row on the aging board, and are arranged in the same row as the grooves and located at one end of the grooves;

[0018] The fuses in the same column are electrically connected to the grains in the grooves in sequence through wires.

[0019] Furthermore, the wire connected to the detection needle is arranged on the aging board in a staggered manner at a position where it is connected to the adjacent fuse.

[0020] A production equipment is provided with the test fixture as described above.

[0021] A chip crystal high temperature test fixture designed by the present application has a simple structure and is easy to operate. It can accurately and quickly find unqualified crystals without affecting the normal test results of other crystals. All crystals are tested before packaging, thereby ensuring the quality of subsequent packaging. It can not only shorten the test cycle, but also reduce the test risk. The present application also proposes a production device equipped with the test fixture. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of a chip die high temperature test fixture according to an embodiment of the present application;

[0023] Figure 2 is a three-dimensional diagram of a die placement area according to an embodiment of the present application;

[0024] Figure 3 is an exploded view of a common electrode plate according to an embodiment of the present application;

[0025] Figure 4 is a side view of a common electrode plate according to an embodiment of the present application;

[0026] Figure 5 is a bottom view of a common electrode plate according to an embodiment of the present application;

[0027] Figure 6 It is a three-dimensional diagram of a fixing plate with a detection needle installed in one embodiment of the present application;

[0028] Figure 7 It is a schematic diagram of a circuit layout area according to an embodiment of the present application.

[0029] In the figure:

[0030] 10. Die placement area 11. Common plate 12. Groove

[0031] 13. Detection needle 14. Fixing plate 15. Heat dissipation slot

[0032] 16. Gel layer 20. Circuit layout area 21. Aging board

[0033] 22, fuse 23, wire 30, crystal DETAILED DESCRIPTION

[0034] The present application is described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] This embodiment provides a chip die high temperature test fixture, such as Figure 1 As shown, it includes a die placement area 10 for placing chip dies 30 and detection probes 13 and a circuit layout area 20 for circuit arrangement. The circuit layout area 20 is located at one end of the die placement area 10 and is placed side by side. Figure 2 As shown, the die placement area 10 is equipped with a common electrode plate 11, a plurality of die 30 are placed on the upper end surface of the common electrode plate 11, and a plurality of detection needles 13 are arranged above the common electrode plate 11 to contact the anode of the die 30. The circuit layout area 20 is equipped with an aging board 21, a fuse 22 is arranged on the aging board 21, and is connected to the detection needle 13 through a wire 23.

[0036] Each crystal grain 30 is equipped with a fuse 22 and a probe needle 13; and each probe needle 13 in contact with the crystal grain 30 is connected to the fuse 22 through a wire 23. One end of each fuse 22 matched with the crystal grain 30 is connected to the probe needle 13 through a wire 23; and the other end of the fuse 22 is connected to the machine port (omitted in the figure) through another wire 23. The setting of this structure, on the basis of ensuring the stability of the high temperature performance test of the chip crystal grain 30, avoids the quality problem of a single crystal grain 30 affecting the high temperature test of other crystal grains 30, so that all the crystal grains 30 on the wall are short-circuited, and unqualified crystal grains can be accurately and quickly found without affecting the normal test results of other crystal grains. The high temperature test fixture can perform high temperature reverse bias test without chip packaging, avoid the influence of packaging on the performance of chip crystal grains 30, know the influence of metal ions on the performance of chip crystal grains 30 at high temperature in advance, shorten the test cycle, and reduce experimental risks.

[0037] like Figure 3 As shown, a plurality of rows of grooves 12 are arranged along the length direction of the common plate 11 on the upper end surface thereof, and the widths of all the grooves 12 are the same and are evenly arranged in sequence along the width direction of the common plate 11. At the same time, a gel layer 16 for fixing the crystal grain 30 is arranged in each groove 12, and if the high temperature reverse bias test voltage is above 800V, the gel layer 16 is organic silicon gel; if the high temperature reverse bias test voltage is below 800V, the gel layer 16 is silicone oil.

[0038] Regardless of the material of the gel layer 16, it needs to be poured into the groove body of the groove 12. The bottom surface and the surrounding sides of the die 30 are fully wrapped by the gel layer 16, and the upper end surface of the die 30 is exposed on the gel layer 16. The gel layer 16 plays an insulating role, mainly to prevent the die 30 from sparking during the high temperature reverse bias test.

[0039] A number of uniformly distributed grains 30 are arranged in each groove 12, and the number of grains 30 in all grooves 12 is the same. Preferably, the positions of the grains 30 in all grooves 12 correspond one to one, that is, the arrangement methods are the same.

[0040] like Figure 4-5As shown, in the process of high-temperature reverse bias test, the die placement area 10 and the circuit layout area 20 need to be placed together in the oven for high-temperature test. In order to improve the stability and accuracy of the die 30 test and the strength of the common electrode plate 11, it is necessary to set a plurality of heat dissipation grooves 15 on the lower end surface of the common electrode plate 11 to quickly diffuse the heat. The heat dissipation grooves 15 are arranged in parallel with the grooves 12, that is, they are arranged along the length direction of the common electrode plate 11, and the heat dissipation grooves 15 are constructed as through-hole grooves, that is, through grooves arranged along the length direction of the common electrode plate 11. The heat dissipation grooves 15 are constructed on the corresponding surface of the non-groove 12, that is, on the lower end surface of the common electrode plate 11, the back-to-back surfaces of all the grooves 12 are flat surfaces, and the back-to-back surfaces of all the non-groove 12 are provided with heat dissipation grooves 15.

[0041] like Figure 6 As shown, the die placement area 10 also includes a fixing plate 14 for mounting a probe needle 13. The width of the fixing plate 14 matches the width of the groove 12, and its length is slightly longer than the length of the groove 12. The probe needle 13 penetrates the thickness of the fixing plate 14 and is fixed on the fixing plate 14. Preferably, a number is engraved on the upper end surface of the fixing plate 14, that is, the number of the chip in which row is recorded, so that the probe needle 13 corresponds to the chip die 30 at the corresponding position one by one, and it is also convenient for the probe needle 13 to be connected to the corresponding fuse 22 through a wire.

[0042] like Figure 2 As shown, mounting holes for fixing each fixing plate 14 are also configured on the upper end surface of each common plate 11, and the mounting holes are configured at both ends of each groove 12. Each groove 12 corresponds to a fixing plate 14, and each fixing plate 14 is fixed with a detection needle 13 corresponding to all the grains 30 in the groove 12, and each fixing plate 14 is connected to the upper end surface of the common plate 11 through a connecting column.

[0043] like Figure 7 As shown, the fuses 22 matched by all the dies 30 in each groove 12 are arranged in the same row at one end of the groove 12 and are arranged on the upper end surface of the aging board 21. There are as many groups of fuses 22 as there are grooves 12, and the number of fuses 22 in each group matches the number of dies 30 in each groove 12 one by one.

[0044] For the fuses 22 in the same column, they are electrically connected to the die 30 in the corresponding groove 12 in sequence through the wires; the wires connected to the probe needles 13 are staggered and arranged on the aging board 21 at the positions where they are connected to the adjacent fuses 22. That is, if the fuse 22 matched with the outermost die 30 No. 1 near one end of the circuit arrangement area 20 in the first row of grooves 12 is connected to the wire 23 through its upper connection point; then, the adjacent fuse 22 is connected to the wire 22 through the lower connection point of the fuse 22, that is, the adjacent wires 23 connected to the probe needles 13 are alternately arranged at intervals when connected to the fuses 22, so as to avoid mutual influence during connection and improve the accuracy and convenience of the test.

[0045] A production equipment is provided with the test fixture as described above.

[0046] A chip crystal high temperature test fixture designed by the present application has a simple structure and is easy to operate. It can accurately and quickly find unqualified crystals without affecting the normal test results of other crystals. All crystals are tested before packaging, thereby ensuring the quality of subsequent packaging. It can not only shorten the test cycle, but also reduce the test risk. The present application also proposes a production device equipped with the test fixture.

[0047] The above detailed description of the embodiments of the present application is only a preferred embodiment of the present application and cannot be considered to limit the scope of implementation of the present application. All equivalent changes and improvements made within the scope of the present application should still fall within the scope of the patent coverage of the present application.

Claims

1. A chip die high temperature test fixture, characterized in that: include: A crystal grain placement area is provided with a common electrode plate, a plurality of crystal grains are placed on the upper end surface of the common electrode plate, and a plurality of detection needles in contact with the anodes of the crystal grains are also arranged above the common electrode plate; A circuit layout area, which is equipped with an aging board, on which a fuse is arranged and connected to the detection needle through a wire; Wherein, each die is equipped with one of the fuses and one of the detection needles; and each of the detection needles in contact with the die is connected to the fuse via a wire.

2. A chip die high temperature test fixture according to claim 1, characterized in that: The other end of the fuse matched with the die is connected to the machine port through another wire.

3. A chip die high temperature test fixture according to claim 1 or 2, characterized in that: A plurality of rows of grooves are formed on the upper end surface of the common electrode plate and arranged along the length direction thereof, and a gel layer for fixing the crystal grains is formed in the grooves.

4. A chip die high temperature test fixture according to claim 3, characterized in that: A plurality of uniformly distributed crystal grains are arranged in each of the grooves.

5. A chip die high temperature test fixture according to claim 4, characterized in that: A plurality of heat dissipation grooves are arranged in the lower end surface of the common electrode plate, and the heat dissipation grooves are arranged on the corresponding surface other than the groove.

6. A chip die high temperature test fixture according to claim 5, characterized in that: The heat dissipation slot is arranged in parallel with the groove and is configured as a through-hole slot.

7. A chip die high temperature test fixture according to any one of claims 4 to 6, characterized in that: It also includes a fixing plate for mounting the detection needle, and the detection needle is configured to penetrate the thickness of the fixing plate.

8. A chip die high temperature test fixture according to claim 7, characterized in that: A mounting hole for fixing the fixing plate is also formed on the upper end surface of each common electrode plate. The mounting holes are arranged at both ends of each groove, and the fixing plate is connected to the common electrode plate through a connecting column.

9. A chip die high temperature test fixture according to any one of claims 4-6 and 8, characterized in that: All fuses matching the die in each of the grooves are arranged in the same row on the aging board, arranged in the same row as the grooves and located at one end of the grooves; The fuses in the same column are electrically connected to the grains in the grooves in sequence through wires.

10. A chip die high temperature test fixture according to claim 9, characterized in that: The wire connected to the detection needle is arranged on the aging board in a staggered manner at a position where it is connected to the adjacent fuse.

11. A production equipment, characterized in that: A test fixture as described in any one of claims 1 to 10 is provided.

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