Internet of Things card structure

Abstract

The utility model relates to an internet of things card structure, which comprises an SIM chip and at least one group of low-pass filtering units, each group of low-pass filtering units comprises at least one capacitor and at least one inductor, the inductors are electrically connected with the Vcc end of the SIM chip in sequence, and the capacitors are electrically connected between the Vcc end and the Gnd end of the SIM chip; and the SIM chip and all the low-pass filtering units are sealed together to form a packaging body. The low-pass filtering unit and the SIM chip are sealed in one packaging body, the amplitude of voltage burrs measured between the Vcc pin and the Gnd pin of the SIM chip after low-pass filtering is greatly reduced, the voltage burrs are filtered, pulse interference is avoided, and the stability of internal operation of the SIM chip is guaranteed.

Description

Technical Field

[0001] The present application belongs to the technical field of Internet of Things, and specifically relates to an Internet of Things card structure. Background Art

[0002] The IoT card is a dedicated SIM (Subscriber Identity Module) card provided by telecom operators for terminal devices to access the IoT network. With the development of the IoT, more and more terminal devices also need to have wireless Internet access capabilities and install wireless Internet access modules. These wireless Internet access modules need to be equipped with dedicated IoT cards.

[0003] The working environment of these terminal devices to be connected to the Internet is very different from that of ordinary mobile phones, so they require IoT cards dedicated to the Internet of Things. The IoT card looks different from the SIM card of an ordinary mobile phone, but both usually use the same SIM chip. The working environment of the terminal devices is much more complex than that of ordinary mobile phones, and there will be stronger electromagnetic interference, and there may also be larger pulse interference on the power supply.

[0004] SIM chips usually operate in the voltage range of 1.65V-5.5V, with built-in SIM programs and file systems, which store key data such as operator Imsi, Internet authentication keys and TMSI in the form of files. SIM programs and file systems are physically stored on norflash. Once the file index information or file content is tampered with, the SIM card will become invalid. Large pulse interference on the power supply of the terminal device may cause logical errors in the internal operation of the SIM chip, write erroneous data to norflash, and thus make the identity recognition of the SIM chip invalid.

[0005] According to statistics, the width of voltage glitches generated by the power supply of terminal equipment is generally between 5ns and 250ns; most positive glitches are between 1.8V and 7.7V, and negative glitches are between -4.5V and 0V. In some extreme cases encountered in actual use environments, the depth of the glitches reaches more than 27V, which is much larger than the normal voltage range of the SIM chip. Relevant testing agencies have conducted tests and statistics, and found that most of the failures of IoT cards encapsulated with SIM chips used in ordinary mobile phone SIM cards are caused by pulse interference on the power supply. Utility Model Content

[0006] The purpose of this application is to provide an IoT card structure to effectively solve the defect that the existing IoT card cannot resist large-amplitude pulse interference on the power supply.

[0007] In order to achieve the above purpose, the technical solution adopted in this application is:

[0008] Provided is an Internet of Things card structure, comprising a SIM chip and at least one group of low-pass filter units, wherein each group of the low-pass filter units comprises at least one capacitor and at least one inductor, wherein the inductors are electrically connected to the Vcc terminal of the SIM chip in sequence, and the capacitors are electrically connected between the Vcc terminal and the Gnd terminal of the SIM chip; the SIM chip and all the low-pass filter units are sealed together to form a package.

[0009] The technical effect of this technical solution is that the low-pass filter unit and the SIM chip are sealed into one package, and the voltage glitch amplitude measured between the Vcc pin and the Gnd pin of the SIM chip after low-pass filtering is greatly reduced, the voltage glitch is filtered, pulse interference is avoided, and the stability of the internal operation of the SIM chip is ensured.

[0010] In one embodiment of the technical solution, a packaging substrate is also included, the substrate is provided with a conducting circuit, and the SIM chip, capacitor and inductor are electrically connected to the substrate by at least one of a patch method, a metal sintering method and a wire bonding method.

[0011] In one embodiment of the technical solution, the substrate is a BT material board, a ceramic substrate or a lead frame.

[0012] In one implementation of the technical solution, the substrate, the SIM chip and the low-pass filter unit are packaged together using SiP packaging technology to form a package body.

[0013] In one implementation of the technical solution, the inductor is a magnetic bead inductor with a resistance of 1800 ohms and a frequency of 100 MHZ.

[0014] In one implementation of the technical solution, the capacitance of the capacitor is 1 uF.

[0015] In one embodiment of the technical solution, the package body is further provided with a plurality of external pins, wherein the Vcc end of the SIM chip is electrically connected to the Vcc external pin after passing through the inductor in sequence, and the Gnd end of the SIM chip is electrically connected to the Gnd external pin.

[0016] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other objects, features and advantages of the present application will become more apparent through a more detailed description of exemplary embodiments of the present application in conjunction with the accompanying drawings, wherein the same reference numerals generally represent the same components in the exemplary embodiments of the present application.

[0018] Figure 1 It is a principle block diagram of the IoT card structure shown in one embodiment of the present application.

[0019] Figure 2 It is a circuit principle block diagram of the IoT card structure shown in one embodiment of the present application.

[0020] Figure 3 It is a structural principle diagram of a substrate and an electronic device shown in an embodiment of the present application.

[0021] Figure 4 It is a schematic diagram of the bottom structure of a package body shown in an embodiment of the present application.

[0022] Description of reference numerals:

[0023] 11-SIM chip; 12-low-pass filter unit; 121-capacitor; 122-inductor; 13-substrate; 14-package; 141-external pin. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in some embodiments of the present application to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0025] The technical solution of the embodiments of the present application is described in detail below with reference to the accompanying drawings.

[0026] like Figures 1 to 4 As shown in , this embodiment is an IoT card structure, the IoT card includes a SIM chip 11 and a group of low-pass filter units 12, the low-pass filter unit 12 includes a capacitor 121 and an inductor 122, the inductor 122 is electrically connected to the Vcc terminal of the SIM chip 11, and the capacitor 121 is electrically connected between the Vcc terminal and the Gnd terminal of the SIM chip 11; the SIM chip 11 and the low-pass filter unit 12 are sealed together to form a package body 14.

[0027] It should be noted that in order to increase the effect of preventing pulse interference, multiple groups of low-pass filter units 12 can be set, and multiple groups of low-pass filter units 12 are connected in series to obtain a better filtering voltage burr effect. In addition, each low-pass filter unit 12 may also include multiple inductors 122 or capacitors 121, and multiple inductors 122 are electrically connected in series in sequence, and multiple capacitors 121 are electrically connected in parallel with each other, and one ends of the multiple capacitors 121 are electrically connected to one end of the inductor 122 close to the SIM chip 11, and the other ends of the capacitors 121 are electrically connected to the Gnd pin of the SIM chip 11.

[0028] In this embodiment, a substrate 13 for packaging is also included. The substrate 13 is provided with a conducting circuit. The SIM chip 11, the capacitor 121 and the inductor 122 can be electrically connected to the substrate 13 by at least one of a patch method, a metal sintering method and a wire bonding method.

[0029] The substrate 13 may be made of BT (Bismaleimide Triazine) material, ceramic substrate 13 or lead frame. The substrate 13, SIM chip 11 and low-pass filter unit 12 are packaged together to form a package body 14 using SiP (System In a Package) packaging technology.

[0030] In this embodiment, the inductor 122 is a magnetic bead inductor with a resistance of 1800 ohms and a frequency of 100 MHZ. Compared with ordinary inductors of the same size, magnetic bead inductors can obtain a larger impedance. The capacitance of the capacitor 121 is 1 uF.

[0031] For example, it has been tested that when a 1800 ohm, 100 MHZ magnetic bead inductor and a 1uF capacitor are selected to form a set of low-pass filter units 12, the voltage glitch of the harmonic 1MHZ can be reduced by about 50 times, while using two sets of such low-pass filter units 12 can reduce the amplitude by about 3000 times.

[0032] In this embodiment, the package body 14 is further provided with a plurality of external pins 141, wherein the Vcc terminal of the SIM chip 11 is electrically connected to the Vcc external pin after passing through the inductor 122 in sequence, and the Gnd terminal of the SIM chip 11 is electrically connected to the Gnd external pin. In addition to the Vcc terminal and the Gnd terminal, the SIM chip 11 also has pins such as the RST terminal, the CLK terminal, and the IO terminal, and these pins are provided with corresponding RST external pins, CLK external pins, and IO external pins on the package body 14.

[0033] Thus, after selecting the above capacitor 121 and inductor 122, it is relatively easy to realize the final SIP packaged chip, which has exactly the same size and compatible external pin 141 definition as the conventional IoT card, and can be made into the form of plastic package FDN8 or MP2 in appearance.

[0034] In the IoT card of this embodiment, the low-pass filter unit 12 and the SIM chip 11 are sealed into a package 14. After low-pass filtering, the voltage glitch amplitude measured between the Vcc pin and the Gnd pin of the SIM chip 11 is greatly reduced, the voltage glitch is filtered, pulse interference is avoided, and the stability of the internal operation of the SIM chip 11 is ensured.

[0035] The embodiments of the present application have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The selection of terms used herein is intended to best explain the principles of the embodiments, practical applications, or improvements to the technology in the market, or to enable other persons of ordinary skill in the art to understand the embodiments disclosed herein.

Claims

1. An IoT card structure, characterized in that: It comprises a SIM chip and at least one group of low-pass filter units, each group of the low-pass filter units comprises at least one capacitor and at least one inductor, the inductors are electrically connected to the Vcc terminal of the SIM chip in sequence, and the capacitors are electrically connected between the Vcc terminal and the Gnd terminal of the SIM chip; the SIM chip and all the low-pass filter units are sealed together to form a package.

2. The IoT card structure according to claim 1, characterized in that: It also includes a substrate for packaging, the substrate is provided with a conducting circuit, and the SIM chip, capacitor and inductor are electrically connected to the substrate by at least one of a patch method, a metal sintering method and a lead binding method.

3. The IoT card structure according to claim 2, characterized in that: The substrate is a BT material board, a ceramic substrate or a lead frame.

4. The IoT card structure according to claim 2, characterized in that: The substrate, the SIM chip and the low-pass filter unit are packaged together using SiP packaging technology to form a package body.

5. The IoT card structure according to claim 1, characterized in that: The inductor is a magnetic bead inductor.

6. The IoT card structure according to claim 1, characterized in that: The package body is also provided with a plurality of external pins, wherein the Vcc end of the SIM chip is electrically connected to the Vcc external pin after passing through the inductor in sequence, and the Gnd end of the SIM chip is electrically connected to the Gnd external pin.

Images