Double-electrode electrostatic chuck for semiconductor equipment and plasma processing device

Abstract

The utility model relates to the technical field of semiconductor manufacturing, in particular to a double-electrode electrostatic chuck for semiconductor equipment, which comprises a base and an electrostatic chuck main body part, the electrostatic chuck main body part is connected onto the base, and the electrostatic chuck main body part comprises a ceramic substrate, a graphical protective layer and a thin film electrode, the patterned protective layer covers the ceramic substrate, two thin film electrodes are arranged between the patterned protective layer and the ceramic substrate to form a dual-electrode structure, and the thin film electrodes are located between the ceramic substrate and the patterned protective layer or embedded in the ceramic substrate. According to the utility model, by forming the electrostatic chuck main body part with the graphical protective layer, the plasma resistance, the surface hardness and the thermal conductivity of the electrostatic chuck main body part are enhanced; the problems that in the prior art, an electrostatic chuck is prone to damage and the structure of the electrostatic chuck is unstable at high temperature are solved, and the service life of the electrostatic chuck is prolonged. The utility model also discloses a plasma processing device.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a double-electrode electrostatic chuck and a plasma processing device for semiconductor equipment. Background Art

[0002] In recent years, with the development of semiconductor manufacturing technology, plasma processing technology has been widely used in the process of semiconductor components. The above-mentioned processes, such as deposition and etching processes, are generally carried out in a plasma processing device. Generally speaking, a plasma processing device includes a chamber for providing process gas from a gas supply source to a gas shower head in the chamber, and an electrostatic chuck (ESC) for fixing and supporting the substrate. The electrostatic chuck is usually arranged at the bottom of the chamber of the plasma processing device and connected to the radio frequency power source as a lower electrode, while the gas shower head at the top of the chamber is connected to the radio frequency power source or the ground as an upper electrode. An RF electric field is formed between the upper and lower electrodes, so that the electrons accelerated by the electric field collide with the etching gas molecules introduced into the processing chamber to generate plasma formed by the process gas to react with the substrate to carry out the required process. Adding an RF power supply to the substrate will affect the deposition efficiency and also damage the ESC. Utility Model Content

[0003] In view of the deficiencies in the prior art, the purpose of the utility model is to provide a dual-electrode electrostatic chuck and plasma processing device for semiconductor equipment that is simple in structure and easy to use. The utility model enhances the anti-plasma performance, surface hardness and thermal conductivity of the electrostatic chuck main body by forming an electrostatic chuck main body with a protective layer; solves the problems in the prior art that the electrostatic chuck is easily damaged and the electrostatic chuck structure is unstable at high temperatures, thereby increasing its service life.

[0004] To achieve the above-mentioned purpose, the technical solution of the utility model is: a dual-electrode electrostatic chuck for semiconductor equipment, comprising a base and an electrostatic chuck main body, the electrostatic chuck main body is connected to the base, the electrostatic chuck main body comprises a ceramic substrate, a patterned protective layer and a thin film electrode, the patterned protective layer covers the ceramic substrate, two thin film electrodes are arranged between the patterned protective layer and the ceramic substrate to form a dual-electrode structure, and the thin film electrode is located between the ceramic substrate and the patterned protective layer or embedded in the ceramic substrate.

[0005] Furthermore, the main body of the electrostatic suction cup also includes an insulating layer and a heating layer. The ceramic substrate is bonded to the base by an adhesive. The heating layer is arranged in the insulating layer. The insulating layer is arranged between the ceramic substrate and the thin film electrode. The patterned protective layer covers the insulating layer, the thin film electrode, and the surface and side of the ceramic substrate.

[0006] Furthermore, the insulating layer includes a first insulating layer and a second insulating layer. The first insulating layer, the heating layer and the second insulating layer are sequentially formed on the upper surface of the ceramic substrate. The first insulating layer is an insulating and thermally insulating ceramic material, the second insulating layer is an insulating and thermally conductive ceramic material, and the heating layer is a metal or metal alloy material.

[0007] Furthermore, the upper surface of the patterned protective layer is provided with a pattern consisting of small squares and grooves or small hexagonal grids and grooves, the square or hexagonal pattern is used to electrostatically attract the ceramic substrate, and the grooves are connected together to flow helium to help release the ceramic substrate or adjust the temperature.

[0008] Furthermore, the patterned protection layer is an integrated structure, and the patterned protection layer covers the upper surface and side walls of the ceramic substrate.

[0009] Furthermore, the patterned protective layer is a multi-layer thin film structure, the patterned protective layer includes a protective layer and a functional layer, the thin film electrode is embedded in the ceramic substrate, and the functional layer and the protective layer are sequentially arranged from bottom to top on the ceramic substrate.

[0010] Furthermore, the patterned protective layer also includes a third insulating layer. The thin film electrode is formed above the ceramic substrate. The third insulating layer, the functional layer, and the protective layer are arranged on the ceramic substrate and the thin film electrode from bottom to top. The material of the third insulating layer is ceramic, the material of the functional layer is metal or metal alloy, and the material of the protective layer is ceramic or Group IIIB metal compound or a combination of ceramic and Group IIIB metal compound.

[0011] Furthermore, a protective layer is formed on the surface and sidewalls of the ceramic substrate, and the upper surface of the protective layer is patterned. The multilayer thin film structure of the patterned protective layer is formed by combining thermal spraying, vacuum coating technology and PEPVD.

[0012] The utility model also provides a plasma processing device, comprising the above-mentioned dual-electrode electrostatic chuck for semiconductor equipment, and also comprising a vacuum chamber, a reaction gas shower head and a thin film radio frequency electrode, wherein the thin film radio frequency electrode is located in the reaction gas shower head, the dual-electrode electrostatic chuck is located in the vacuum chamber, and the thin film radio frequency electrode forms an electrode pair with the thin film electrode in the dual-electrode electrostatic chuck to generate an electric field inside the vacuum chamber.

[0013] Furthermore, one end of the reaction gas shower head is powered, the other end of the reaction gas shower head is grounded, the thin film electrode in the double-electrode electrostatic chuck is connected to the DC voltage, and the high-voltage DC power supply is applied to the thin film electrode to generate polarized charges on the surface of the electrostatic chuck, and polarized charges with opposite polarities are generated at corresponding positions on the surface of the ceramic substrate.

[0014] The advantages of adopting the technical solution of the utility model are:

[0015] 1. The utility model forms an electrostatic chuck main body with a graphic protective layer, thereby enhancing the anti-plasma performance, surface hardness and thermal conductivity of the electrostatic chuck main body; solves the problems of easy damage to the electrostatic chuck and unstable structure of the electrostatic chuck at high temperature in the prior art, and improves its service life.

[0016] 2. The utility model forms an electrostatic chuck body with a patterned protective layer, so that the electrostatic chuck body formed by the utility model can be protected from plasma impact, reducing plasma erosion and particle pollution. In addition, the combination of the electrostatic chuck body and the base is flexible, and after the electrostatic chuck is formed, there is no need to perform the PEALD process of coating the corrosion-resistant coating, which can effectively avoid the defect of unstable combination between the body and the base when coating the corrosion-resistant coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only for the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 This is a schematic diagram of the structure of a double-electrode electrostatic chuck according to the first embodiment of the utility model;

[0019] Figure 2 This is a schematic diagram of the structure of the main body of the electrostatic chuck in the second embodiment of the utility model;

[0020] Figure 3 This is a schematic structural diagram of the main body of the electrostatic chuck in the third embodiment of the utility model;

[0021] Figure 4 This is a schematic diagram of a plasma processing device of the present utility model.

[0022] The marks in the above figure are respectively: 1. vacuum chamber; 2. reaction gas shower head; 3. thin film RF electrode; 10. electrostatic suction cup main body; 11. ceramic substrate; 12. patterned protective layer; 12a. protective layer; 12b. functional layer; 12c. third insulating layer; 13. thin film electrode; 14. insulating layer; 14a. first insulating layer; 14b. second insulating layer; 15. heating layer; 20. adhesive; 30. base. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments.

[0024] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The words "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0025] like Figures 1 to 4 As shown, a dual-electrode electrostatic chuck for semiconductor equipment includes a base 30 and an electrostatic chuck main body 10, wherein the electrostatic chuck main body 10 is connected to the base 30, and the electrostatic chuck main body 10 includes a ceramic substrate 11, a patterned protective layer 12 and a thin film electrode 13, wherein the patterned protective layer 12 covers the ceramic substrate 11, and two thin film electrodes 13 are arranged between the patterned protective layer 12 and the ceramic substrate 11 to form a dual-electrode structure, wherein the thin film electrode 13 is located between the ceramic substrate 11 and the patterned protective layer 12 or embedded in the ceramic substrate 11. The utility model enhances the anti-plasma performance, surface hardness and thermal conductivity of the electrostatic chuck main body by forming an electrostatic chuck main body with a patterned protective layer; solves the problem in the prior art that the electrostatic chuck is easily damaged and the electrostatic chuck structure is unstable at high temperatures, thereby improving its service life.

[0026] The upper surface of the patterned protection layer 12 is provided with a pattern consisting of small squares and grooves or small hexagonal grids and grooves. The square or hexagonal pattern is used to electrostatically attract the ceramic substrate 11, and the grooves are connected together to flow helium to help release the ceramic substrate 11 or adjust the temperature.

[0027] The patterned protection layer 12 is an integrated structure, and the patterned protection layer 12 covers the upper surface and side walls of the ceramic substrate 11 .

[0028] The base 30 of the electrostatic chuck is generally made of metal such as aluminum, titanium alloy, or stainless steel, which is conducive to the input of radio frequency energy; the base can also be made of a composite of ceramics and metals that provide good strength and durability as well as heat transfer. The manufacturing steps of the base can be formed by existing technologies. The step of connecting the electrostatic chuck body 10 and the base 30 as a whole is, for example, after forming the electrostatic chuck body 10 and the base, by coating an adhesive on the base, placing the electrostatic chuck body on the adhesive, and fixing the electrostatic chuck body 10 on the base, wherein the adhesive can be a silicone-based adhesive. In addition, other processes, such as diffusion welding and other methods can also be used to connect the electrostatic chuck body 10 and the base, and the present technology is not limited to this.

[0029] The material of the ceramic substrate 11 is, for example, aluminum nitride (ALN), aluminum oxide (Al2O3), silicon carbide (SiC), boron nitride (BN), zirconium oxide (ZrO2), etc. and their compounds. Suitable materials for the thin film electrode 13 are high melting point metals or metal alloy materials, such as molybdenum, tungsten and their compounds. In this embodiment, the ceramic substrate is formed by a sintering process, and the thin film electrode 13 is formed on the upper surface of the ceramic substrate 11. In other embodiments, the thin film electrode can also be embedded in the ceramic substrate. The thin film electrode 13 is preferably formed by vacuum coating technology such as chemical vapor deposition or physical vapor deposition to obtain higher component purity, tissue density and resistivity. Of course, it can also be formed by other existing technologies such as screen printing. The formation processes of the thin film electrode 13 and the ceramic substrate 11 are well known to those skilled in the art, and the specific details are not repeated here.

[0030] A thin film protective layer 12 resistant to plasma erosion is deposited on the ceramic substrate 11 and the thin film electrode 13, thereby forming an electrostatic chuck main body 10 with a surface covered with the protective layer.

[0031] The material of the patterned protective layer 12 can be selected from ceramics or group IIIB metal compounds or a combination of ceramics and group IIIB metal compounds, including Y2O3 / Al2O3, Y2O3 / YF3, YF3 / Al2O3, ErO2 / Al2O3, and materials based on Y2O3, ErO2, and YF3 and doped with other elements or ceramic components such as Al2O3, Zr2O3, AlN, SiO2, and SiC, preferably yttrium oxide Y2O3 or yttrium oxide / aluminum oxide composite material Y2O3 / Al2O3. In a preferred embodiment, the material of the patterned protective layer 12 is a composite material of yttrium oxide and aluminum oxide Y2O3 / Al2O3, because yttrium oxide itself has good plasma corrosion resistance, while aluminum oxide exhibits high hardness, high resistivity and high thermal conductivity, so the protective layer formed by the composite material of yttrium oxide and aluminum oxide can have the above advantages.

[0032] The patterned protective layer 12 is formed by plasma enhanced atomic layer deposition (PEALD). Compared with other methods such as thermal spraying, the protective layer formed by the PEPVD deposition process has better density and does not have the problem of pore defects. The thickness of the formed patterned protective layer 12 is greater than or equal to 0.05 mm.

[0033] In addition, in this embodiment, the patterned protection layer 12 covers the upper surface and side walls of the ceramic substrate 11, thereby further preventing the side walls of the main body from being eroded by plasma; however, in other embodiments, the patterned protection layer 12 may also only form the upper surface of the ceramic substrate.

[0034] The upper surface of the patterned protective layer 12 is patterned to form the electrostatic chuck main body 10. By patterning the upper surface of the patterned protective layer 12, such as forming a pattern consisting of small squares and grooves or small hexagonal grids and grooves on the upper surface of the protective layer (the square or hexagonal grid pattern is used to electrostatically attract the substrate, and the connected grooves are used to flow helium (He) to help release the substrate or adjust the temperature), it is beneficial for the substrate to be smoothly electrostatically attracted or released on the electrostatic chuck, and the temperature of the surface of the electrostatic chuck is controlled. In addition, since the patterning of the patterned protective layer 12 in this embodiment is the last step in forming the electrostatic chuck main body 10, it can ensure that the surface pattern of the main body is processed more accurately.

[0035] In addition, when manufacturing the base of the electrostatic chuck, a thin film protective layer that is resistant to plasma erosion can be deposited on the surface of the base using a PEALD deposition process, thereby protecting the base from plasma corrosion.

[0036] As can be seen from the above, the utility model can protect the electrostatic chuck body formed by the electrostatic chuck body with a thin film protective layer from plasma impact, thereby reducing plasma erosion and particle contamination. In addition, the combination of the electrostatic chuck body and the base is flexible, and after the electrostatic chuck is formed, there is no need to perform the PEALD process of coating the corrosion-resistant coating, which can effectively avoid the defect of unstable combination between the body and the base when coating the corrosion-resistant coating.

[0037] The electrostatic main body 10 includes a ceramic substrate 11 and a patterned protective layer 12 thereon. The thin film electrode 13 is formed between the ceramic substrate 11 and the patterned protective layer 12 or embedded in the ceramic substrate 11. By applying a DC power supply, an electrostatic force is generated between the semiconductor wafer and the main body, so that the wafer is firmly adsorbed on the electrostatic chuck. The patterned protective layer 12 covers at least part of the surface of the ceramic substrate exposed to the plasma (such as the upper surface of the ceramic substrate or the upper surface and sidewall of the ceramic substrate) to serve as an erosion-resistant coating for protecting the exposed surface of the electrostatic chuck body from the plasma. The ceramic substrate 11 is made of a ceramic material with high resistivity, high thermal conductivity and low radio frequency loss. The material of the patterned protective layer 12 is preferably a composite material of aluminum oxide and yttrium oxide, so that the protective layer can have both plasma corrosion resistance, high hardness, high resistivity and high thermal conductivity. In addition, the patterned protective layer 12 is preferably formed by plasma enhanced physical vapor deposition, so as to have the advantages of better compactness and reduced pore defects.

[0038] The main body 10 of the electrostatic suction cup also includes an insulating layer 14 and a heating layer 15. The ceramic substrate 11 is bonded to the base 30 by an adhesive 20. The heating layer 15 is arranged in the insulating layer 14. The insulating layer 14 is arranged between the ceramic substrate 11 and the thin film electrode 13. The patterned protective layer 12 covers the insulating layer 14, the thin film electrode 13, and the surface and side of the ceramic substrate 11.

[0039] The insulating layer 14 includes a first insulating layer 14a and a second insulating layer 14b. The first insulating layer 14a, the heating layer 15 and the second insulating layer 14b are sequentially formed on the upper surface of the ceramic substrate 11. The first insulating layer 14a is an insulating and heat-insulating ceramic material, the second insulating layer 14b is an insulating and heat-conductive ceramic material, and the heating layer 15 is a metal or metal alloy material. The heating layer 15 can be used to adjust and control the surface temperature of the substrate, thereby further improving the overall performance of the electrostatic chuck.

[0040] In another embodiment of the utility model, the patterned protective layer 12 is a multi-layer thin film structure, the patterned protective layer 12 includes a protective layer 12a and a functional layer 12b, the thin film electrode 13 is embedded in the ceramic substrate 11, and the functional layer 12b and the protective layer 12a are sequentially arranged from bottom to top on the ceramic substrate 11. The protective layer 12a is the top layer of the multi-layer thin film structure. By adding functional layers, the performance of the electrostatic chuck can be adjusted to meet different process requirements. The functional layer 12b can be a heating layer to achieve the regulation and control of the substrate surface temperature, further improving the overall performance of the electrostatic chuck; the functional layer 12b can also be a high resistance layer or a low resistance layer to achieve or enhance other process performances of the formed electrostatic chuck.

[0041] The patterned protective layer 12 also includes a third insulating layer 12c. The thin film electrode 13 is formed above the ceramic substrate 11. The third insulating layer 12c, the functional layer 12b, and the protective layer 12a are arranged on the ceramic substrate 11 and the thin film electrode 13 from bottom to top. The material of the third insulating layer 12c is ceramic, the material of the functional layer 12b is metal or metal alloy, and the material of the protective layer 12a is ceramic or Group IIIB metal compound or a combination of ceramic and Group IIIB metal compound.

[0042] The surface and side walls of the ceramic substrate 11 are both formed with a protective layer 12a, which improves the plasma corrosion resistance of the side walls of the main body of the electrostatic chuck. The upper surface of the protective layer 12a is patterned. The multi-layer thin film structure can be formed by a thin film coating process. The thin film coating process can easily achieve large-area uniform coating, and the density and uniformity of the formed multi-layer thin film structure can be guaranteed. In this embodiment, the multi-layer thin film structure of the patterned protective layer 12 is formed by combining three processes: thermal spraying, vacuum coating technology and PEPVD.

[0043] The utility model also provides a plasma processing device including the above-mentioned dual-electrode electrostatic chuck for semiconductor equipment, the plasma processing device also includes a vacuum chamber 1, a reaction gas shower head 2 and a thin film radio frequency electrode 3, the thin film radio frequency electrode 3 is located in the reaction gas shower head 2, the dual-electrode electrostatic chuck is located in the vacuum chamber 1, the thin film radio frequency electrode 3 and the thin film electrode 13 in the dual-electrode electrostatic chuck form an electrode pair, and an electric field is generated inside the vacuum chamber. One end of the reaction gas shower head 2 is connected to a power supply, and the other end of the reaction gas shower head 2 is grounded. The thin film electrode 13 in the dual-electrode electrostatic chuck is connected to a DC direct current voltage, and a high-voltage direct current power supply is applied to the thin film electrode 13, so that polarized charges are generated on the surface of the electrostatic chuck, and polarized charges with opposite polarities are generated at corresponding positions on the surface of the ceramic substrate 11.

[0044] During operation, a substrate (not shown) is placed on the surface of the electrostatic chuck body 10. A process gas source supplies the process gas required for the plasma treatment process to the chamber. The process gas is input into the vacuum chamber 1 from the gas source, and one or more power sources can be applied to the thin film electrode 13 alone or simultaneously to the upper electrode, i.e., the thin film RF electrode 3 and the thin film electrode 13, respectively, to deliver power to the thin film electrode 13 or to the thin film RF electrode 3 and the thin film electrode 13, thereby generating a large electric field inside the reaction chamber. The DC direct current voltage source applies a high voltage direct current power supply to the thin film electrode 13, so that polarized charges are generated on the surface of the electrostatic chuck, and further generates polarized charges of opposite polarity at corresponding positions on the surface of the substrate, thereby firmly adsorbing the substrate on the electrostatic chuck through the Coulomb force or Johnson-Rahbek force generated between the substrate and the electrostatic chuck. After the plasma process is completed, the power source is turned off, and the DC direct current voltage is turned off to the thin film electrode 13 by the DC direct current voltage source to release the substrate from the electrostatic chuck.

[0045] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present invention is limited to these examples; under the concept of the present invention, the technical features in the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of the different aspects of the present invention as described above, which are not provided in detail for the sake of simplicity. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A dual-electrode electrostatic chuck for semiconductor equipment, comprising a base (30) and an electrostatic chuck body (10), wherein the electrostatic chuck body (10) is connected to the base (30), characterized in that: The electrostatic chuck main body (10) comprises a ceramic substrate (11), a patterned protective layer (12) and a thin film electrode (13); the patterned protective layer (12) covers the ceramic substrate (11); two thin film electrodes (13) are arranged between the patterned protective layer (12) and the ceramic substrate (11) to form a dual-electrode structure; the thin film electrode (13) is located between the ceramic substrate (11) and the patterned protective layer (12) or is embedded in the ceramic substrate (11).

2. A dual-electrode electrostatic chuck for semiconductor equipment according to claim 1, characterized in that: The electrostatic chuck main body (10) further comprises an insulating layer (14) and a heating layer (15); the ceramic substrate (11) is bonded to the base (30) by means of an adhesive (20); the heating layer (15) is arranged in the insulating layer (14); the insulating layer (14) is arranged between the ceramic substrate (11) and the thin film electrode (13); and the patterned protective layer (12) covers the insulating layer (14), the thin film electrode (13), and the surface and side of the ceramic substrate (11).

3. A dual-electrode electrostatic chuck for semiconductor equipment according to claim 2, characterized in that: The insulating layer (14) comprises a first insulating layer (14a) and a second insulating layer (14b); the first insulating layer (14a), a heating layer (15) and a second insulating layer (14b) are sequentially formed on the upper surface of the ceramic substrate (11); the first insulating layer (14a) is an insulating and heat-insulating ceramic material, the second insulating layer (14b) is an insulating and heat-conductive ceramic material, and the heating layer (15) is a metal or metal alloy material.

4. A dual-electrode electrostatic chuck for semiconductor equipment according to claim 1 or 2, characterized in that: The upper surface of the patterned protective layer (12) is provided with a pattern consisting of small squares and grooves or small hexagonal grids and grooves, the square or hexagonal pattern is used to electrostatically attract the ceramic substrate (11), and the grooves are connected together to flow helium to help release the ceramic substrate (11) or adjust the temperature.

5. A dual-electrode electrostatic chuck for semiconductor equipment as claimed in claim 4, characterized in that: The patterned protective layer (12) is an integrated structure, and the patterned protective layer (12) covers the upper surface and side walls of the ceramic substrate (11).

6. A dual-electrode electrostatic chuck for semiconductor equipment as claimed in claim 4, characterized in that: The patterned protective layer (12) is a multi-layer thin film structure, comprising a protective layer (12a) and a functional layer (12b), a thin film electrode (13) is embedded in a ceramic substrate (11), and the functional layer (12b) and the protective layer (12a) are sequentially arranged on the ceramic substrate (11) from bottom to top.

7. A dual-electrode electrostatic chuck for semiconductor equipment according to claim 6, characterized in that: The patterned protective layer (12) further comprises a third insulating layer (12c); the thin film electrode (13) is formed on the ceramic substrate (11); the third insulating layer (12c), the functional layer (12b), and the protective layer (12a) are sequentially arranged on the ceramic substrate (11) and the thin film electrode (13) from bottom to top; the material of the third insulating layer (12c) is ceramic; the material of the functional layer (12b) is metal or metal alloy; and the material of the protective layer (12a) is ceramic or a Group IIIB metal compound or a combination of ceramic and a Group IIIB metal compound.

8. A dual-electrode electrostatic chuck for semiconductor equipment as claimed in claim 7, characterized in that: A protective layer (12a) is formed on the surface and side walls of the ceramic substrate (11), the upper surface of the protective layer (12a) is patterned, and the multilayer thin film structure of the patterned protective layer (12) is formed by combining three processes: thermal spraying, vacuum coating technology and PEPVD.

9. A plasma processing device, characterized in that: The invention comprises a dual-electrode electrostatic chuck for semiconductor equipment according to any one of claims 2 to 8, wherein the plasma processing device further comprises a vacuum chamber (1), a reaction gas shower head (2) and a thin film radio frequency electrode (3), wherein the thin film radio frequency electrode (3) is located in the reaction gas shower head (2), the dual-electrode electrostatic chuck is located in the vacuum chamber (1), and the thin film radio frequency electrode (3) forms an electrode pair with the thin film electrode (13) in the dual-electrode electrostatic chuck to generate an electric field inside the vacuum chamber.

10. A plasma processing device according to claim 9, characterized in that: One end of the reaction gas shower head (2) is powered, and the other end of the reaction gas shower head (2) is grounded. The thin film electrode (13) in the double-electrode electrostatic chuck is connected to a DC voltage. A high-voltage DC power supply is applied to the thin film electrode (13), so that polarized charges are generated on the surface of the electrostatic chuck, and polarized charges with opposite polarities are generated at corresponding positions on the surface of the ceramic substrate (11).

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