Semiconductor laser
By designing a semiconductor laser with a laser chip with multiple light emitting sources and a refractive structure, the problem that existing lasers can only generate lasers at specific wavelengths is solved, and multi-wavelength laser output and higher laser quality are achieved.
Patent Information
- Application Number
- CN202420216545.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-29
- Publication Date
- 2025-02-07
- Estimated Expiration
- 2034-01-29
AI Technical Summary
Existing semiconductor lasers can only produce lasers of specific wavelengths, resulting in relatively single functions and difficult to meet market demand.
A semiconductor laser is designed, including a laser chip with at least two light emitting sources and a refractive structure. The light emitting sources of the laser chip are arranged in the first direction and emit laser light in the second direction. The refractive structure is opposite to the light emitting source, and multiple beams of laser light are approached by refraction.
It is realized that semiconductor lasers can generate lasers of different wavelengths, making their functions more complete, and at the same time, the quality of output lasers is improved through the refractive structure.
Smart Images
Figure CN222441098U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of lasers, in particular to a semiconductor laser. Background Art
[0002] The wavelength range of lasers is quite wide, usually there are lasers of different wavelengths from infrared to ultraviolet. Lasers of different wavelengths are widely used in different fields. For example, infrared lasers can be used in material processing, medical treatment, communications and other fields, visible light lasers can be used in display, measurement, cutting and other fields, and ultraviolet lasers can be used in lithography, chemical analysis, biological research and other fields.
[0003] As a semiconductor component, semiconductor lasers are widely used in the above-mentioned fields. However, existing semiconductor lasers can usually only generate lasers of a specific wavelength, which makes their functions relatively single and difficult to meet market demand. Utility Model Content
[0004] The main purpose of the utility model is to provide a semiconductor laser, aiming to solve the problem that the existing semiconductor laser can only generate laser light of a specific wavelength.
[0005] To achieve the above-mentioned purpose, the semiconductor laser proposed by the utility model comprises:
[0006] A laser chip having at least two light sources, wherein the at least two light sources are arranged in a first direction and emit laser light in a second direction; and
[0007] The refractive structure is opposite to the two light sources in the second direction, and the laser beams emitted by the at least two light sources can approach each other after passing through the refractive structure toward the second direction.
[0008] In some embodiments, in the first direction, the wavelengths of the lasers emitted by the at least two light sources are arranged in decreasing order.
[0009] In some embodiments, the refraction structure includes a refraction plate, the refraction plate is opposite to the at least two light sources in the second direction, and in the first direction, the refraction plate is gradually disposed away from the at least two light sources.
[0010] In some embodiments, a plurality of refraction plates are provided, and the plurality of refraction plates are arranged in the second direction.
[0011] In some embodiments, the at least two light sources include a 915 nm wavelength light source, and / or a 976 nm wavelength light source.
[0012] In some embodiments, the semiconductor laser includes a heat sink base, and the laser chip is disposed on the heat sink base.
[0013] In some embodiments, a plurality of mounting surfaces arranged in steps are formed on the heat sink base;
[0014] The laser chips are provided in plurality and are respectively provided on the plurality of mounting surfaces;
[0015] The refraction structure includes a plurality of refraction plates, and the plurality of refraction plates are respectively arranged corresponding to the plurality of laser chips.
[0016] In some embodiments, the semiconductor laser further includes a polarization beam combining component, which is disposed on a transmission path of the plurality of lasers and is used to combine the plurality of lasers to form a combined laser beam.
[0017] In some embodiments, the semiconductor laser further includes a coupler and a transmission optical fiber, the light input side of the coupler is arranged corresponding to the light output side of the polarization beam combining component, and the transmission optical fiber is connected to the light output side of the coupler.
[0018] In some embodiments, the semiconductor laser further includes a fast-axis collimating lens and a slow-axis collimating lens, and the fast-axis collimating lens and the slow-axis collimating lens are arranged at intervals between the laser chip and the refractive structure.
[0019] In the technical solution provided by the utility model, since the laser chip can generate lasers of different wavelengths, the semiconductor laser can be applied in more usage scenarios and has relatively complete functions. At the same time, due to the setting of the refractive structure, multiple laser beams can be brought closer to each other by refraction, thereby improving the quality of the output laser. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.
[0021] Figure 1 A schematic diagram of an optical path of a semiconductor laser according to an embodiment of the present invention;
[0022] Figure 2 for Figure 1 Schematic diagram of the spot position of the laser beam of the laser chip before refraction;
[0023] Figure 3 for Figure 1 Schematic diagram of the spot position of the laser beam after refraction from the laser chip.
[0024] Description of Figure Numbers:
[0025] Label name Label name 100 Semiconductor Laser 111a 915nm wavelength spot 1 Laser chip 112a 976nm wavelength spot 11 Light source 2 Refraction structure 111 915nm wavelength light source 21 Refraction Plate 112 976nm wavelength light source
[0026] The realization of the purpose, functional features and advantages of the utility model will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION
[0027] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0028] It should be noted that if a directional indication is involved in the embodiments of the present invention, the directional indication is only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.
[0029] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the utility model, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the utility model.
[0030] The wavelength range of lasers is quite wide, usually there are lasers of different wavelengths from infrared to ultraviolet. Lasers of different wavelengths are widely used in different fields. For example, infrared lasers can be used in material processing, medical treatment, communications and other fields, visible light lasers can be used in display, measurement, cutting and other fields, and ultraviolet lasers can be used in lithography, chemical analysis, biological research and other fields.
[0031] As a semiconductor component, semiconductor lasers are widely used in the above-mentioned fields. However, existing semiconductor lasers can usually only generate lasers of a specific wavelength, which makes their functions relatively single and difficult to meet market demand.
[0032] Analyzing the above problems, it can be seen that there is a lack of a semiconductor laser capable of outputting multi-wavelength lasers in the art. In view of this, the utility model proposes a semiconductor laser, aiming to solve the problem that existing semiconductor lasers can only generate lasers of specific wavelengths.
[0033] in, Figure 1 A schematic diagram of an optical path of a semiconductor laser according to an embodiment of the present invention; Figure 2 for Figure 1 Schematic diagram of the spot position of the laser beam of the laser chip before refraction; Figure 3 for Figure 1 Schematic diagram of the spot position of the laser beam after refraction from the laser chip.
[0034] See also Figures 1 to 3 The semiconductor laser 100 includes a laser chip 1 and a refractive structure 2. The laser chip 1 has at least two light sources 11. The at least two light sources 11 are arranged in a first direction and emit lasers in a second direction. The refractive structure 2 is opposite to the two light sources 11 in a second direction. The laser beams emitted by the at least two light sources 11 can approach each other after passing through the refractive structure 2 in the second direction.
[0035] It should be noted that there must be a physical distance between the multiple light sources on the same laser chip 1 objectively, which results in a certain distance between the lasers emitted by each of them. The multiple lasers are usually coupled to the output optical fiber by the same set of collimating beam combining components. The large physical distance between adjacent lasers will undoubtedly affect the final laser output quality. The multiple light sources 11 can emit lasers at the same time or be controlled to emit lasers at different times. The specific working mode thereof is not limited in this embodiment, as long as they can output lasers of different wavelengths.
[0036] Since the refractive index of lasers with different wavelengths in the same medium is different, the refractive structure 2 is arranged on the optical path of the laser to bring multiple lasers closer to each other by refraction. Figure 1 , before entering the refractive structure 2, the distance between the two laser beams is D. Since the refractive index of the laser beam with a smaller wavelength is larger, its deflection angle in the refractive structure 2 is larger, and it can be deflected more toward the other laser beam. Therefore, after emitting from the refractive structure 2, the distance between the two laser beams is d, where d<D;
[0037] In the technical solution provided by the present invention, since the laser chip 1 can generate lasers of different wavelengths, the semiconductor laser 100 can be applied in more usage scenarios and has relatively complete functions. At the same time, due to the setting of the refractive structure 2, multiple laser beams can be brought closer to each other by refraction, thereby improving the quality of the output laser.
[0038] In some embodiments, in the first direction, the wavelengths of the lasers emitted by the at least two light sources 11 are arranged in a decreasing manner. Such an arrangement can ensure that the deflection angles of the multiple laser beams emitted by the at least two light sources 11 in the refractive structure 2 gradually increase, and the medium in the refractive structure 2 can be evenly distributed, so that the refractive structure 2 is less difficult to obtain.
[0039] The refractive structure 2 has various shapes, and can be an integral structure or a split structure, and a plurality of different small refractive parts are respectively provided corresponding to different light sources 11, so as to refract different laser beams toward each other. Specifically, in some embodiments, the refractive structure 2 includes a refractive plate 21, and the refractive plate 21 is opposite to the at least two light sources 11 in the second direction, and in the first direction, the refractive plate 21 is gradually arranged away from the at least two light sources 11. In the technical solution of this embodiment, the refractive structure 2 is provided with an integral refractive plate 21, and the refractive plate 21 is arranged at an angle, so as to play the role of closing multiple laser beams, and the solution is relatively simple and the setting cost is low.
[0040] In some embodiments, the refraction plates 21 are provided in plurality, and the plurality of refraction plates 21 are arranged in the second direction. It should be noted that when a single refraction plate 21 is tilted according to the above scheme, it can play a role of laser closing once, and when the plurality of refraction plates 21 are arranged in the second direction, it can play a role of laser closing multiple times, thereby bringing the plurality of laser beams as close as possible, so that the final output light spot is as small as possible, and the output quality of the laser is higher.
[0041] In some embodiments, the at least two light sources 11 include a 915nm wavelength light source 111, and / or a 976nm wavelength light source 112. It should be noted that the 915nm wavelength light source 111 and the 976nm wavelength light source 112 can generate lasers with wavelengths of 915nm and 976nm, respectively, which are in the near-infrared wavelength and have good thermal effects. In the laser welding scene, its unique beam uniformity and continuity of laser energy have significant effects on uniform heating and rapid temperature rise of the pad, and has the advantages of high welding efficiency, precise control of welding position, good consistency of solder joints, etc. It is very suitable for precision welding of small and micro electronic components, complex circuit boards and PCB boards and other small and complex structural parts; please refer to Figure 2 , wherein the distance D between the 915nm wavelength light spot 111a and the 976nm wavelength light spot 112a generated by the 915nm wavelength light source 111 and the 976nm wavelength light source 112 before entering the refractive structure 2 is relatively large, please continue to refer to Figure 3, wherein the distance d between the 915nm wavelength light spot 111a and the 976nm wavelength light spot 112a generated by the 915nm wavelength light source 111 and the 976nm wavelength light source 112 emitted through the refractive structure 2 is relatively small.
[0042] In some embodiments, the semiconductor laser 100 includes a heat sink base, and the laser chip 1 is disposed on the heat sink base. It should be noted that the heat sink base is made of a heat sink material, which has a good heat dissipation effect and can dissipate the heat generated during the operation of the laser chip 1 to ensure the stable operation of the laser chip 1.
[0043] In some embodiments, the heat sink base is formed with a plurality of mounting surfaces arranged in steps; a plurality of laser chips 1 are arranged, and are respectively arranged on the plurality of mounting surfaces; the refractive structure 2 includes a plurality of refractive plates 21, and the plurality of refractive plates 21 are respectively arranged corresponding to the plurality of laser chips 1. By arranging a plurality of mounting surfaces arranged in steps on the heat sink base, more mounting positions can be provided to install as many laser chips 1 as possible, thereby improving the laser output power of the semiconductor laser 100. At the same time, the plurality of mounting surfaces arranged in steps can arrange the plurality of laser chips 1 in intervals in the three-dimensional space of the heat sink base, thereby ensuring the laser transmission of each of the laser chips 1.
[0044] In some embodiments, the semiconductor laser 100 further includes a polarization beam combining component, which is disposed on the transmission path of the plurality of lasers to combine the plurality of lasers into a combined laser beam, so as to facilitate subsequent coupling into the transmission optical fiber. It should be noted that the structure of the polarization beam combining component can have many forms. In some embodiments, the polarization beam combining component includes a beam combining reflector and a beam combining collimating lens, which is not limited in the embodiments of the present application.
[0045] In some embodiments, the semiconductor laser 100 further includes a coupler and a transmission optical fiber, wherein the light input side of the coupler corresponds to the light output side of the polarization beam combining component, and the transmission optical fiber is connected to the light output side of the coupler. The coupler is used to couple the combined laser beam outputted by the polarization beam combining component into the transmission optical fiber, and by coupling the output beams of multiple semiconductor lasers 100, high-power and high-density laser output can be obtained.
[0046] In some embodiments, the semiconductor laser 100 further includes a fast-axis collimating lens and a slow-axis collimating lens, and the fast-axis collimating lens and the slow-axis collimating lens are arranged at intervals between the laser chip 1 and the refractive structure 2. The fast-axis collimating lens and the slow-axis collimating lens can collimate the laser emitted by the laser chip 1.
[0047] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made under the concept of the present invention using the contents of the specification and drawings of the present invention, or direct / indirect application in other related technical fields are included in the patent protection scope of the present invention.
Claims
1. A semiconductor laser, characterized in that: include: A laser chip having at least two light sources, wherein the at least two light sources are arranged in a first direction and emit laser light in a second direction; as well as, The refractive structure is opposite to the two light sources in the second direction, and the laser beams emitted by the at least two light sources can approach each other after passing through the refractive structure toward the second direction.
2. The semiconductor laser according to claim 1, characterized in that In the first direction, the wavelengths of the lasers emitted by the at least two light sources are arranged in decreasing order.
3. The semiconductor laser according to claim 2, characterized in that The refraction structure includes a refraction plate, the refraction plate is opposite to the at least two light sources in the second direction, and in the first direction, the refraction plate is gradually arranged away from the at least two light sources.
4. The semiconductor laser according to claim 3, characterized in that A plurality of refraction plates are provided, and the plurality of refraction plates are arranged in the second direction.
5. The semiconductor laser according to claim 1, wherein: The at least two light sources include a 915 nm wavelength light source and / or a 976 nm wavelength light source.
6. The semiconductor laser according to claim 1, wherein: The semiconductor laser comprises a heat sink base, and the laser chip is arranged on the heat sink base.
7. The semiconductor laser according to claim 6, characterized in that The heat sink base is formed with a plurality of mounting surfaces arranged in steps; The laser chips are provided in plurality and are respectively provided on the plurality of mounting surfaces; The refraction structure includes a plurality of refraction plates, and the plurality of refraction plates are respectively arranged corresponding to the plurality of laser chips.
8. The semiconductor laser according to claim 7, characterized in that The semiconductor laser further comprises a polarization beam combining component, which is arranged on the transmission path of the plurality of lasers and is used for combining the plurality of lasers to form a combined laser beam.
9. The semiconductor laser according to claim 8, characterized in that The semiconductor laser also includes a coupler and a transmission optical fiber. The light input side of the coupler is arranged corresponding to the light output side of the polarization beam combining component, and the transmission optical fiber is connected to the light output side of the coupler.
10. The semiconductor laser according to claim 1, wherein The semiconductor laser further comprises a fast axis collimating lens and a slow axis collimating lens, wherein the fast axis collimating lens and the slow axis collimating lens are arranged at intervals between the laser chip and the refractive structure.