Device for crystal annealing

By designing a stacked structural device for crystal annealing, the problems of low space utilization efficiency and susceptible to collision and damage in the prior art are solved, and efficient use of muffle furnace space is achieved, and the efficiency and quality of crystal rod annealing are improved. And reduce production costs.

CN222455314UActive Publication Date: 2025-02-11SENYI QUANTUM TECH (XIAMEN) CO LTD
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Patent Information

Application Number
CN202421209199.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-30
Publication Date
2025-02-11
Estimated Expiration
2034-05-30

AI Technical Summary

Technical Problem

When the existing oxide crystal rod annealing device is used in muffle furnaces, the space utilization efficiency is low and cannot match the actual production capacity of the growth furnace. At the same time, the crystal rod is easily damaged by bumps and damage during the annealing process, affecting its quality.

Method used

A device for crystal annealing is designed, using a stacked structure of the frame body, and positioning and fixing is achieved through the cooperation of the L-shaped plug-in and the side plate, and grooves on the annealed placement layer are added for placing the crystal rod, which realizes the Multi-layer stacking and fixed positioning improve space utilization efficiency and crystal rod protection.

Benefits of technology

Through the stacking design, the space utilization efficiency of the muffle furnace is improved, the number of annealed crystal rods per furnace is increased, the crystal rods are not bumped during the annealing process is achieved, the quality of the crystal rods is improved, and the use of platinum sheets is reduced. , saving production costs.

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Abstract

The utility model discloses a device for crystal annealing, which comprises a frame main body with an upper opening, the frame main body comprises a bottom plate and at least three side plates, the side plates are vertically arranged on the bottom plate, the upper ends of the side plates are L-shaped inserts, the lower ends of the side plates are provided with notches, and slots matched with the L-shaped inserts are formed at the notches; the L-shaped plug-in positioned at the lower part is matched with the slot of the side plate positioned at the upper part, so that the at least two frame main bodies are positioned and fixed, and a laminated structure is assembled; and an annealing placement layer is arranged in the frame main body. The muffle furnace can improve the quality of oxide crystal bars, reduce the use amount of platinum sheets, and improve the use space and efficiency of the muffle furnace, thereby reducing the production cost.
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Description

Technical Field

[0001] The utility model relates to the field of artificial crystal growth equipment, in particular to a device for crystal annealing. Background Art

[0002] In the preparation process of melt-processed oxide crystals, due to the high melting point of the growing crystals, the required temperature gradient is large, and thermal stress and dislocation defects will inevitably occur inside the crystals. As the crystal size increases, thermal stress and dislocation defects will also increase. The usual method to reduce crystal thermal stress and dislocation defects is to perform constant temperature annealing at a temperature 50-100℃ lower than the melting point of the crystal for a certain period of time, so as to facilitate the subsequent processing of crystal products.

[0003] At present, the main method for annealing oxide crystal rods is to lay a layer of mullite lightweight insulation brick material at the lower end of the muffle furnace body, and place a layer of platinum sheet on the top of the insulation brick. The crystal rod is then placed on the platinum sheet for stress relief annealing. Due to the limited size of the muffle furnace, the oxide crystal rod material cannot directly contact the insulation material. Therefore, only single-layer annealing can be carried out. The number of crystal rods annealed at a time is limited, and the effective use of space is limited, which cannot match the actual crystal rod production capacity of the growth furnace. If the annealing efficiency needs to be further improved, there are two ways: First, increase the number of annealing furnaces (large equipment investment); Second, design and innovate the structure of the annealing device to maximize the use of the effective space of the muffle furnace.

[0004] On the other hand, in the prior art, the position of the crystal rod is not fixed during annealing, which may easily cause damage such as bumps during operation, thereby affecting the quality of the crystal rod. Utility Model Content

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the utility model is to design a device for crystal annealing, which can maximize the use of the effective space of the muffle furnace, achieve collision-free annealing of the crystal, further improve the crystal quality, and at the same time reduce the use of platinum sheets and save production costs.

[0006] In order to achieve the above-mentioned purpose, the technical solution provided by the utility model is: a device for crystal annealing, comprising a frame body with an upper opening, containing a bottom plate and at least three side plates, the side plates are vertically arranged on the bottom plate; the upper end of the side plate is an L-shaped plug-in, and the lower end is provided with a notch, and the notch forms a slot that matches the L-shaped plug-in; at least two frame bodies are positioned and fixed by matching the L-shaped plug-in located at the bottom with the slot of the side plate located at the top, and assembled to form a stacked structure; an annealing placement layer is provided inside the frame body.

[0007] Furthermore, the annealing placement layer has a plurality of grooves for placing the oxide crystal rods. Preferably, the width of the groove is 1-2 mm larger than the cross-sectional size of the oxide crystal rod, and the groove body depth is 5-10 mm. The groove can be an arc groove or a rectangular groove, matching the shape of the oxide crystal rod.

[0008] Preferably, the bottom plate and the side plate have the same thickness, and the thickness of the raised portion of the L-shaped plug-in unit is half that of the bottom plate.

[0009] Preferably, at least one of the side panels has a trapezoidal opening.

[0010] Preferably, the bottom plate and the side plates are made of alumina ceramics.

[0011] Preferably, the annealing placement layer is a lightweight mullite brick layer.

[0012] The main features of the structure of this utility model are:

[0013] 1. The efficiency of oxide crystal rod annealing has been improved from the original 12 pieces / furnace to 20 pieces / furnace or even 30 pieces / furnace;

[0014] 2. Through the stacking design, the use space and efficiency of the muffle furnace are further improved, and the number of equipment is effectively reduced;

[0015] 3. Through the design of oxide crystal rod annealing positioning slots, the oxide crystal rod annealing can be achieved without collision, further improving the quality of the oxide crystal rod, reducing the use of platinum sheets, and thus reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the utility model.

[0017] Figure 2 It is a schematic diagram of stacking of the utility model.

[0018] Figure 3 yes Figure 2 Enlarged schematic diagram of part A.

[0019] Figure 4 It is a usage state diagram of the utility model.

[0020] Figure 5 yes Figure 4 Top view of the .

[0021] Figure numerals: 1. frame body; 11. bottom plate; 12. side plate; 13. L-shaped plug-in; 14. notch; 15. slot; 16. trapezoidal opening; 2. annealing placement layer; 21. groove; 3. oxide crystal rod; 4. platinum gasket. DETAILED DESCRIPTION

[0022] In order to better understand the technical solution of the utility model, the embodiments of the utility model are described in detail below in conjunction with specific embodiments. It should be clear that the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0023] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The singular forms "a", "the" and "the" used in the embodiments of the present invention and the appended claims are also intended to include the plural forms unless the context clearly indicates other meanings. The test materials used in the present invention are all common commercial products and can be purchased on the market.

[0024] Reference Figures 1 to 5 The device for crystal annealing shown in the figure comprises a frame body 1 with an upper opening, a bottom plate 11 and at least three side plates 12, the side plates 12 are vertically arranged on the bottom plate 11, the upper end of the side plate 12 is an L-shaped plug-in 13, and the lower end is provided with a notch 14, and the notch 14 forms a slot 15 that matches the L-shaped plug-in 13, as shown in FIG. Figure 3 As shown in the partial enlarged view; the L-shaped plug 13 located at the bottom cooperates with the slot 15 of the side panel 12 located at the top so that at least two frame bodies 1 are positioned and fixed, and assembled to form Figure 2 The laminated structure.

[0025] Preferably, the bottom plate 11 and the side plate 12 have the same thickness, and the thickness of the raised portion of the L-shaped plug-in unit 13 is half of the bottom plate 11 .

[0026] Furthermore, the bottom plate 11 and the side plate 12 are made of alumina ceramics.

[0027] Preferably, at least one of the side panels 12 has a trapezoidal opening 16, which can effectively dissipate heat and is easier to operate manually.

[0028] Furthermore, an annealing layer 2 is provided inside the frame body 1, such as Figure 1 and Figure 2 As shown, there are several grooves 21 on the annealing placement layer 2 for placing the oxide crystal rod 3. The width of the groove 21 is 1-2 mm larger than the cross-sectional size of the oxide crystal rod 3, and the groove body depth of the groove 21 is 5-10 mm. The groove 21 can be an arc groove or a rectangular groove, which matches the shape of the oxide crystal rod 3. When in use, a platinum gasket 4 is laid in the groove 21, and the oxide crystal rod 3 is placed on the platinum gasket 4 in the groove 21, and then placed in a muffle furnace for annealing. The device of the utility model can be used in a single layer or in multiple layers.

[0029] Preferably, the annealing placement layer 2 is a light mullite brick layer. Light mullite bricks are porous materials, which are conducive to heat dissipation of the oxide crystal rod 3 after annealing, and avoid thermal stress cracking caused by excessive temperature difference between the inside and outside of the oxide crystal rod 3 after annealing. Light mullite bricks can instantly conduct the heat inside the crystal at a certain rate.

[0030] like Figure 4 and Figure 5 As shown, the annealing of 20 Φ35*25*250mm square oxide crystal rods 3 is taken as an example. The annealing placement layer 2 is designed with 10 rectangular grooves according to the size of the corresponding oxide crystal rods 3, and the rectangular grooves are 300mm long, 27mm wide and 5mm high. The annealing placement layer 2 is placed in the frame body 1, and the corresponding 10 platinum gaskets 4 with a thickness of 0.2mm are respectively placed in the rectangular grooves of the annealing placement layer 2. According to the corresponding crystal rod numbers, 10 square oxide crystal rods 3 are respectively placed in the corresponding rectangular grooves, and the corresponding markings and records are made to complete the installation of the first layer annealing device, and then transferred to the muffle furnace. The installation method of the second layer is similar to that of the first layer. After the installation of the second layer is completed, the second layer is moved to the muffle furnace as a whole and placed in the position of the slot 15 of the first layer for interlocking. After the installation of the two layers of annealing devices is completed, the muffle furnace insulation board is installed, the furnace door is closed, the corresponding annealing program is set, and the annealing process is carried out.

[0031] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A device for crystal annealing, characterized in that: The invention comprises a frame body (1) with an upper opening, a bottom plate (11) and at least three side plates (12), wherein the side plates (12) are vertically arranged on the bottom plate (11), the upper end of the side plates (12) is an L-shaped plug-in (13), and the lower end is provided with a notch (14), wherein the notch (14) forms a slot (15) that matches the L-shaped plug-in (13); at least two frame bodies (1) are positioned and fixed by matching the L-shaped plug-in (13) located at the bottom with the slot (15) of the side plate (12) located at the top, and are assembled to form a stacked structure; an annealing placement layer (2) is provided inside the frame body (1), and the annealing placement layer (2) has a plurality of grooves (21) for placing crystal rods.

2. A device for crystal annealing according to claim 1, characterized in that: The groove (21) is an arc-shaped groove or a rectangular groove, matching the shape of the crystal rod.

3. The device for crystal annealing according to claim 1, characterized in that: The width of the groove is 1-2 mm larger than the cross-sectional size of the crystal rod, and the groove body depth of the groove is 5-10 mm.

4. The device for crystal annealing according to claim 1, characterized in that: The bottom plate (11) and the side plate (12) have the same thickness, and the thickness of the raised portion of the L-shaped plug-in unit (13) is half that of the bottom plate (11).

5. The device for crystal annealing according to claim 1, characterized in that: At least one of the side panels (12) has a trapezoidal opening (16).

6. The device for crystal annealing according to claim 1, characterized in that: The bottom plate (11) and the side plate (12) are made of alumina ceramics.

7. The device for crystal annealing according to claim 1, characterized in that: The annealing placement layer (2) is made of a lightweight mullite brick layer.