Wafer electrical property detection device and semiconductor machine table

Abstract

The utility model provides a wafer electrical property detection device, comprising a probe card pedestal arranged on a semiconductor machine table, the probe card pedestal comprises a pedestal inner ring and a pedestal outer ring, and the pedestal inner ring is sleeved on the inner wall of the pedestal outer ring; the elastic elements are arranged on the inner ring of the base; the vacuum adsorption structure is arranged on the outer ring of the base; the probe card is arranged on one side of the probe card base, and the probe card is located on the elastic element; and the electrical test structure is arranged on the probe card, and the electrical test structure is electrically connected to the probe card. According to the wafer electrical property detection device and the semiconductor machine disclosed by the utility model, the service life of the probe card can be prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor chips, in particular to a wafer electrical property detection device and a semiconductor machine. Background Art

[0002] With the continuous development of semiconductor technology, the electrical detection of semiconductor devices has become an important basis for semiconductor quality assessment. The existing wafer electrical test mainly performs electrical testing by directly contacting the wafer with the probe of the probe card.

[0003] However, during the wafer electrical test, the probes in the probe card are often inserted too deeply into the wafer due to the inability to monitor the force applied to the probes in real time. This causes the probes to be damaged due to excessive force, and there is also a risk of puncturing the wafer, which is not conducive to improving the service life of the probe card and reduces the efficiency of the wafer electrical test. Therefore, there is room for improvement. Utility Model Content

[0004] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a wafer electrical property detection device and a semiconductor machine, which increase the service life of the probe card.

[0005] In order to solve the above technical problems, the utility model is realized by the following technical solutions:

[0006] The utility model provides a wafer electrical property detection device, comprising:

[0007] A probe card base is arranged on a semiconductor machine, wherein the probe card base comprises a base inner ring and a base outer ring, and the base inner ring is sleeved on the inner wall of the base outer ring;

[0008] A plurality of elastic elements are arranged on the inner ring of the base;

[0009] A vacuum adsorption structure is arranged on the outer ring of the base;

[0010] A probe card is disposed on one side of the probe card base, and the probe card is located on the elastic element; and

[0011] The electrical test structure is disposed on the probe card, and the electrical test structure is electrically connected to the probe card.

[0012] In one embodiment of the utility model, the wafer electrical property detection device further includes:

[0013] A wafer machine, disposed on one side of the probe card base; and

[0014] The controller is communicatively connected to the vacuum adsorption structure and the wafer machine.

[0015] In an embodiment of the present invention, the probe card base is in the shape of a hollow circular ring, and the height of the inner ring of the base is smaller than the height of the outer ring of the base.

[0016] In an embodiment of the present invention, the vacuum adsorption structure is located between the probe card and the probe card base, and the probe card is fixed on the elastic element through the vacuum adsorption structure.

[0017] In an embodiment of the present invention, when the probe card contacts the elastic element, the shortest vertical distance between the probe card and the probe card base is greater than or equal to 0.1 mm and less than or equal to 0.2 mm.

[0018] In one embodiment of the present invention, the vacuum adsorption structure comprises:

[0019] A plurality of adsorption elements are disposed on the outer ring of the base; and

[0020] The pressure sensing element is arranged on the outer ring of the base, and the pressure sensing element is located on one side of the adsorption element.

[0021] In an embodiment of the present invention, the elastic element is fixedly connected to the inner ring of the base, and a plurality of the elastic elements are evenly and symmetrically arranged.

[0022] In an embodiment of the present invention, when the electrical test structure is pressed down, the probe card descends until it contacts one side of the outer ring of the base.

[0023] In an embodiment of the present invention, the centers of the adsorption element, the elastic element, and the probe card base are located on the same straight line.

[0024] The utility model further provides a semiconductor machine, wherein the semiconductor machine comprises the wafer electrical property detection device as described in any one of the above items.

[0025] As described above, the utility model provides a wafer electrical detection device and a semiconductor machine, and the unexpected technical effect is: the utility model can set an elastic element to achieve the rebound of the probe card after the depth of the probe card inserted into the wafer reaches a critical point, so as to prevent the probe card from being damaged due to excessive penetration, thereby improving the service life of the probe card. By setting a vacuum adsorption structure, the air pressure between the probe card and the probe card base can be monitored to prevent the probe from penetrating too deeply and piercing the wafer, thereby improving the efficiency of wafer electrical detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for describing the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1 Shown is a schematic diagram of a semiconductor machine of the present invention;

[0028] Figure 2 Shown is a schematic structural diagram of a wafer electrical property detection device of the utility model;

[0029] Figure 3 Display as Figure 2 A partial enlarged schematic diagram of

[0030] Figure 4 Display as Figure 2 Another partial enlarged schematic diagram of .

[0031] Component number description:

[0032] 100, wafer electrical property detection device; 110, probe card base; 111, base outer ring; 112, base inner ring;

[0033] 120, elastic element; 130, vacuum adsorption structure; 131, adsorption element; 132, pressure sensing element;

[0034] 140, probe card; 150, electrical test structure; 160, wafer machine; 170, controller;

[0035] 200. Semiconductor machine. DETAILED DESCRIPTION

[0036] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0037] See also Figure 1 and Figure 2The utility model provides a wafer electrical detection device, which can be applied to the electrical test process of the wafer, so as to improve the service life of the probe card and the electrical test efficiency of the wafer. The wafer electrical detection device 100 may include but is not limited to a probe card base 110, an elastic element 120, a vacuum adsorption structure 130, a probe card 140, an electrical test structure 150, a wafer machine 160 and a controller 170. Among them, the probe card base 110 can be arranged on a semiconductor machine, and the probe card base 110 can include a base outer ring 111 and a base inner ring 112, and the base inner ring 112 can be sleeved on the inner wall of the base outer ring 111.

[0038] See also Figure 1 and Figure 2 Furthermore, the probe card base 110 may be in a hollow circular ring shape, a hollow rectangular shape, or other hollow shapes, as long as it can carry the probe card 140 so that the probes of the probe card 140 can contact the wafer. In addition, the height of the base inner ring 112 may be less than the height of the base outer ring 111, so that the elastic element 120 is arranged in the base inner ring 112. The thickness of the base outer ring 111 and the base inner ring 112 may not be specifically limited, that is, the thickness of the base outer ring 111 may be greater than the thickness of the base inner ring 112, or may be less than the thickness of the base inner ring 112, or may be equal to the thickness of the base inner ring 112. The aperture of the base inner ring 112 only needs to meet the area requirement of the probe in the probe card 140.

[0039] See also Figure 1 , Figure 2 and Figure 3 , a plurality of elastic elements 120 may be provided, and the elastic element 120 may be provided on the inner ring 112 of the base to provide elastic force for the probe card 140. The elastic element 120 may be fixedly connected to the inner ring 112 of the base, and the plurality of elastic elements 120 may be uniformly and symmetrically arranged to facilitate uniform force on the probe card 140. However, it is not limited to this, and the plurality of elastic elements 120 may also be irregularly arranged, as long as they can provide support for the probe card 140. The elastic element 120 may be an elastic support member in which a support block and a spring are integrally arranged, and both the support block and the spring may be arranged in a rectangular block with a groove formed therein, the support block is T-shaped, and the support block is fixedly connected to the spring. The elastic element 120 may also be an elastic member directly, or other elements with an elastic coefficient, as long as they can provide elastic support for the probe card 140. For example, please refer to Figure 2 and Figure 3There are four elastic elements 120, which are evenly and symmetrically arranged. The elastic element 120 is an elastic support member in which a support block and a spring are integrally arranged. The support block is T-shaped and is fixedly connected to the spring so that the upper end of the support block can be used to elastically support the probe card 140.

[0040] See also Figure 1 , Figure 2 and Figure 4 , the vacuum adsorption structure 130 can be arranged on the outer ring 111 of the base to adsorb and fix the probe card 140 placed on the elastic element 120. Among them, the vacuum adsorption structure 130 can include an adsorption element 131, and a plurality of adsorption elements 131 can be arranged, and a plurality of adsorption elements 131 can be arranged on the outer ring 111 of the base. The plurality of adsorption elements 131 can be arranged evenly and symmetrically to facilitate better adsorption and fixation of the probe card 140. The centers of the adsorption element 131, the corresponding elastic element 120 and the probe card base 110 can be located on the same straight line to facilitate force balance of the probe card 140. In addition, the adsorption element 131 can be an adsorption cylinder, a vacuum suction cup, or other devices capable of achieving vacuum adsorption. However, it is not limited to this, and the vacuum adsorption structure 130 can also include a pressure sensing element 132. The pressure sensing element 132 can be arranged on the outer ring 111 of the base and located on one side of the adsorption element 131 to detect the air pressure between the probe card base 110 and the probe card 140. Specifically, the pressure sensing element 132 may be connected to the adsorption element 131 through a vacuum-sealed pipe, so as to monitor the pressure in the adsorption element 131 .

[0041] See also Figure 1 and Figure 2 , the probe card 140 may be disposed on one side of the probe card base 110, and the probe card 140 is located on the elastic element 120. When the probe card 140 is placed on the elastic element 120, the vacuum adsorption structure 130 may be located between the probe card base 110 and the probe card 140, and the probe card 140 may be fixed on the elastic element 120 by the vacuum adsorption structure 130. In addition, when the probe card 140 contacts the elastic element 120, the shortest vertical distance between the probe card base 110 and the probe card 140 is greater than or equal to 0.1 mm and less than or equal to 0.2 mm. For example, when the probe card 140 contacts the elastic element 120, the shortest vertical distance between the probe card base 110 and the probe card 140 may be 0.1 mm, 0.2 mm, or 0.15 mm.

[0042] See also Figure 1 and Figure 2The electrical test structure 150 can be disposed on the probe card 140, and the electrical test structure 150 can be electrically connected to the probe card 140, so as to implement electrical testing of the wafer through the probe card 140. When the electrical test structure 150 is pressed down, the probe card 140 can be lowered until it contacts one side of the base outer ring 111, so as to insert the probe into the wafer, thereby implementing electrical testing of the wafer by the electrical test structure 150.

[0043] See also Figure 1 and Figure 2 The wafer machine 160 can be arranged on one side of the probe card base 110 to carry the wafer so that the wafer can contact the probe in the probe card 140. The controller 170 can be connected to the vacuum adsorption structure 130 for communication so as to control the opening or closing of the vacuum adsorption structure 130. However, it is not limited to this. The controller 170 can also be connected to the wafer machine 160 for communication so as to control the rise or fall of the wafer machine 160, thereby realizing the control of the height of the wafer.

[0044] See also Figure 1 and Figure 2 The utility model also provides a semiconductor machine 200, and the semiconductor machine 200 may include the above-mentioned wafer electrical detection device 100. The wafer electrical detection device 100 may be provided with at least one to implement electrical testing of the wafer. Specifically, four elastic elements 120 may be evenly and symmetrically arranged on the inner ring 112 of the base within the probe card base 110, and four adsorption elements 131 may be evenly and symmetrically arranged on the outer ring 111 of the base, and the adsorption elements 131 are located on one side of the elastic element 120. Then, the probe card 140 is placed on the elastic element 120. At this time, under the action of the self-gravity of the probe card 140, the probe card 140 applies a pressure equal to its own gravity to the elastic element 120, and the shortest vertical distance between the probe card base 110 and the probe card 140 is greater than or equal to 0.1 mm, and less than or equal to 0.2 mm. Among them, the self-gravity of the probe card 140 can be defined as F1.

[0045] Furthermore, when performing wafer electrical testing, the controller 170 can control the adsorption element 131 in the vacuum adsorption structure 130 to work, and the probe card 140 can be fixed on the elastic element 120 under the adsorption force generated by the adsorption element 131. Among them, the probe card 140 can be adsorbed and fixed by means of a cylinder pressure block of the adsorption element 131, and the adsorption force generated by the adsorption element 131 can be defined as F2. Then, pressure can be applied to the electrical test structure 150 so that the electrical test structure 150 can generate downward pressure on the probe card 140. Among them, the pressure generated by the electrical test structure 150 on the probe card 140 can be defined as F3. Under the action of F3, the probe card 140 begins to descend until it contacts one side of the outer ring 111 of the base. At this time, the elastic element 120 can generate a reverse elastic force on the probe card 140 under the downward pressure of the probe card 140, and the reverse elastic force can be defined as F4.

[0046] Furthermore, when the probe card 140 descends to contact one side of the base outer ring 111, the controller 170 can control the wafer machine 160 to start to drive the wafer placed on the probe card base 110 from the other end to start to rise until the probes in the probe card 140 penetrate into the wafer. When the probes in the probe card 140 penetrate into the wafer, the wafer can generate an upward reaction force on the probes on the probe card 140, and the upward reaction force can be defined as F5.

[0047] It should be noted that during the upward movement of the wafer, the probes in the probe card 140 continuously penetrate into the wafer. When F1 + F2 + F3 ≥ F4 + F5, it means that the penetration depth of the probes into the wafer is less than or equal to the preset threshold. At this time, the pressure sensing element 132 in the vacuum adsorption structure 130 sends the detected pressure to the controller 170. The controller 170 determines that the air pressure shows an upward trend and then controls the wafer to continue to rise. When F1 + F2 + F3 < F4 + F5, it means that the penetration depth of the probes into the wafer is greater than the preset threshold, and at this time, there is a risk of the probes piercing the wafer. Among them, the preset threshold can be between 65 microns and 100 microns, that is, the preset threshold can be 65 microns, or 100 microns, or 80 microns or 90 microns, as long as the preset threshold is between 65 microns and 100 microns. Under the downward pressure of the probe card 140, the elastic element 120 generates an increasing reverse elastic force F4 on the probe card 140 until it reaches the critical value. The probe card 140 rebounds and rises under the action of the reverse elastic force F4 of the elastic element 120 and gradually pulls out from the wafer. At this time, the pressure sensing element 132 sends the detected air pressure to the controller 170. The controller 170 determines that the air pressure shows a downward trend and then controls the wafer to stop rising, that is, to stop the electrical detection of the wafer, which can not only prevent the probes from penetrating too deep into the wafer and causing damage, but also prevent the probes from piercing too deep and causing the wafer to be punctured, thereby improving the service life of the probes and the efficiency of the electrical detection of the wafer.

[0048] In summary, through a wafer electrical detection device and a semiconductor machine provided by the present utility model, the unexpected technical effect is that by setting an elastic element, it is possible to realize the rebound and rise of the probe card after the penetration depth of the probe card into the wafer reaches the critical point, so as to prevent the probe card from being damaged due to too deep penetration depth, thereby improving the service life of the probe card. By setting a vacuum adsorption structure, it is possible to monitor the air pressure between the probe card and the probe card base, prevent the probes from penetrating too deep and causing the wafer to be punctured, and thereby improve the efficiency of the electrical detection of the wafer. Therefore, the present utility model has high industrial utilization value because it effectively overcomes various disadvantages in the prior art.

[0049] In the description of this specification, the descriptions referring to the terms "this embodiment", "example", "specific example", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0050] The embodiments of the utility model disclosed above are only used to help illustrate the utility model. The embodiments do not describe all the details in detail, nor do they limit the utility model to the specific implementation methods described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the utility model, so that technicians in the relevant technical field can well understand and use the utility model. The utility model is limited only by the claims and their full scope and equivalents.

Claims

1. A wafer electrical property detection device, characterized in that: include: A probe card base is arranged on a semiconductor machine, wherein the probe card base comprises a base inner ring and a base outer ring, and the base inner ring is sleeved on the inner wall of the base outer ring; A plurality of elastic elements are arranged on the inner ring of the base; A vacuum adsorption structure is arranged on the outer ring of the base; A probe card is disposed on one side of the probe card base, and the probe card is located on the elastic element; and The electrical test structure is disposed on the probe card, and the electrical test structure is electrically connected to the probe card.

2. The wafer electrical property detection device according to claim 1, characterized in that: The wafer electrical property detection device also includes: A wafer machine, disposed on one side of the probe card base; and The controller is communicatively connected to the vacuum adsorption structure and the wafer machine.

3. The wafer electrical property detection device according to claim 1, characterized in that: The probe card base is in the shape of a hollow circular ring, and the height of the inner ring of the base is smaller than the height of the outer ring of the base.

4. The wafer electrical property detection device according to claim 1, characterized in that: The vacuum adsorption structure is located between the probe card and the probe card base, and the probe card is fixed on the elastic element through the vacuum adsorption structure.

5. The wafer electrical property detection device according to claim 3, characterized in that: When the probe card contacts the elastic element, the shortest vertical distance between the probe card and the probe card base is greater than or equal to 0.1 mm and less than or equal to 0.2 mm.

6. The wafer electrical property detection device according to claim 1, characterized in that: The vacuum adsorption structure comprises: A plurality of adsorption elements are disposed on the outer ring of the base; and The pressure sensing element is arranged on the outer ring of the base, and the pressure sensing element is located on one side of the adsorption element.

7. The wafer electrical property detection device according to claim 1, characterized in that: The elastic elements are fixedly connected to the inner ring of the base, and a plurality of the elastic elements are evenly and symmetrically arranged.

8. The wafer electrical property detection device according to claim 1, characterized in that: When the electrical test structure is pressed down, the probe card descends until it contacts one side of the outer ring of the base.

9. The wafer electrical property detection device according to claim 6, characterized in that: The centers of the adsorption element, the elastic element and the probe card base are located on the same straight line.

10. A semiconductor machine, characterized in that: The semiconductor machine includes the wafer electrical property detection device according to any one of claims 1 to 9.

Images