Light emitting diode chip

Abstract

The utility model provides a light emitting diode chip which comprises a substrate, an epitaxial layer and a current expansion layer, a conductive step of an N-type semiconductor layer is arranged on the epitaxial layer, an N-type electrode electrically connected with the conductive step is arranged on the conductive step, and a P-type electrode electrically connected with the current expansion layer is arranged on the current expansion layer. Each of the N-type electrode and the P-type electrode comprises an electrode bonding pad and an electrode finger, one end of the electrode finger is connected with the electrode bonding pad, each of the electrode bonding pad and the electrode finger comprises an ohmic contact part, a reflection part, a protection part, an anti-EOS part and a wire bonding part which are sequentially deposited in the thickness direction of the electrode bonding pad and the electrode finger, and the anti-EOS part is formed by alternately arranging a plurality of groups of high-resistance and low-resistance metal groups. The thickness of the high-resistance metal is sequentially increased along the thickness direction of the high-resistance metal, the thickness of the # imgabs0 # low-resistance metal is sequentially reduced along the thickness direction of the high-resistance metal, so that when the light-emitting diode chip encounters EOS high-voltage impact, the anti-EOS part can protect metal below the routing part from being damaged due to high-voltage impact.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a light emitting diode chip. Background Art

[0002] In recent years, the light-emitting diode chip technology has developed rapidly under the competition of major manufacturers, and has been widely used in various fields such as general lighting, special lighting, direct display screens, backlight display screens, and car lights.

[0003] With the development of technology, more stringent requirements have been put forward for the optoelectronic performance and reliability of LED chips. How to make LED chips have stronger anti-EOS ability has been the goal pursued by practitioners and scientific researchers. Utility Model Content

[0004] Based on this, the purpose of the utility model is to provide a light emitting diode chip, which can effectively solve the problem that the existing light emitting diodes have weak EOS resistance and are easily damaged when encountering EOS events.

[0005] A light-emitting diode chip comprises a substrate, an epitaxial layer and a current spreading layer which are sequentially deposited along the thickness direction thereof, an N-type electrode is arranged on the epitaxial layer, a P-type electrode electrically connected to the current spreading layer is arranged on the current spreading layer, an anti-EOS part is arranged in the N-type electrode and the P-type electrode, the anti-EOS part is composed of a plurality of first metal groups and a plurality of second metal groups arranged alternately, the thickness of the first metal group increases sequentially from bottom to top, the thickness of the second metal group decreases sequentially from bottom to top, and the resistance of the first metal group is greater than that of the second metal group.

[0006] Furthermore, the thickness of the first metal group increases from bottom to top. The thickness of the second metal group decreases from bottom to top

[0007] Furthermore, the material of the first metal group is Ti metal or Ni metal, and the material of the second metal group is Al metal, Cu metal or Au metal.

[0008] Furthermore, the N-type electrode and the P-type electrode each include an electrode pad and an electrode finger connected to the electrode pad at one end, and the electrode pad and the electrode finger each include an ohmic contact portion, a reflection portion, a protection portion, the anti-EOS portion and a bonding portion sequentially deposited along their thickness direction.

[0009] Furthermore, the ohmic contact portion is made of Cr metal, Ni metal or CrNi alloy metal, and has a thickness between The reflective portion is made of Al metal or AlCu alloy metal with a thickness between The material of the protection part is Ti metal or TiW alloy metal, and the thickness is between The material of the wire bonding part is Au metal, and the thickness is between

[0010] Furthermore, the substrate is made of AlO or GaN transparent substrate.

[0011] Furthermore, the epitaxial layer includes an N-type semiconductor layer, an active light-emitting layer and a P-type semiconductor layer arranged in sequence from bottom to top, the current spreading layer is placed on the P-type semiconductor layer and is electrically connected to the P-type semiconductor layer, the material of the current spreading layer is InO, SnO or InO·SnO, and its thickness is between

[0012] Furthermore, a conductive step of the N-type semiconductor layer is provided on the N-type semiconductor layer, the N-type electrode is provided on the conductive step, and the conductive step is electrically connected to the N-type electrode.

[0013] Furthermore, the light-emitting diode chip further comprises an insulating protective layer, the insulating protective layer being disposed on the N-type semiconductor layer, the insulating protective layer being made of SiO or SiN or AlO, and having a thickness between

[0014] Compared with the prior art, the beneficial effects of the utility model are as follows: by setting an anti-EOS part in the P-type electrode and the N-type electrode, the anti-EOS ability of the light-emitting diode chip is increased; specifically, by setting an electrode pad and an electrode finger in the N-type electrode and the P-type electrode, the light-emitting diode chip and the packaging bracket can be electrically connected through the electrode pad, and the current can be transmitted to various parts of the light-emitting diode chip through the electrode finger, and the ohmic contact part, the reflection part, the protection part, the anti-EOS part and the wiring part are deposited and set in sequence along the thickness direction of the electrode pad and the electrode finger, and by arranging multiple groups of first metal groups and multiple groups of second metal groups alternately, and the thickness of the first metal group increases from bottom to top, and the thickness of the second metal group decreases from bottom to top, so that the current transmitted from the wiring part is quickly transmitted laterally in the second metal group between the two layers of the first metal group, and the speed of the current vertically transmitted to the metal below the wiring part is slowed down, thereby protecting the metal below the wiring part from being damaged by the impact of large voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A top view of a light emitting diode chip in an embodiment of the utility model;

[0016] Figure 2 for Figure 1Section view along line AA;

[0017] Figure 3 for Figure 1 Section view along line BB;

[0018] Description of main component symbols:

[0019] Substrate 10 Electrode fingers 133 Epitaxial layer 11 Electrode pad 134 N-type semiconductor layer 111 Ohmic contact 135 Active light emitting layer 112 Reflection 136 P-type semiconductor layer 113 Conservation Department 137 Conductive steps 114 Anti-EOS Department 138 Current spreading layer 12 Wire Bonding Department 139 N-type electrode 131 Insulation protective layer 14 P-type electrode 132

[0020] The following specific implementation manner will further illustrate the present utility model in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0021] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0022] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art in the technical field of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0024] See also Figures 1 to 3, shown is a light-emitting diode chip in an embodiment of the present invention, comprising a substrate 10, an epitaxial layer 11 and a current spreading layer 12 sequentially deposited along the thickness direction thereof, wherein the epitaxial layer 11 comprises an N-type semiconductor layer 111, an active light-emitting layer 112 and a P-type semiconductor layer 113 sequentially arranged from bottom to top, wherein the current spreading layer 12 is disposed on the P-type semiconductor layer 113 and contacts the P-type semiconductor layer 113 to form an electrical connection, wherein a conductive step 114 of the N-type semiconductor layer 111 is disposed on the N-type semiconductor layer 111, and an N-type electrode 13 electrically connected to the conductive step 114 is disposed on the conductive step 114 1, a P-type electrode 132 electrically connected to the current spreading layer 12 is provided on the current spreading layer 12, the N-type electrode 131 and the P-type electrode 132 each include an electrode pad 134 and an electrode finger 133 connected to the electrode pad 134 at one end, the electrode pad 134 and the electrode finger 133 each include an ohmic contact portion 135, a reflection portion 136, a protection portion 137, an anti-EOS portion 138 and a bonding portion 139 sequentially deposited along the thickness direction thereof, the anti-EOS portion 138 is composed of seven groups of first metal groups and seven groups of second metal groups alternately arranged, the thickness of the first metal group increases from bottom to top The thickness of the second metal group decreases from bottom to top

[0025] It can be understood that by alternately arranging seven groups of the first metal groups and seven groups of the second metal groups, the thickness of the first metal group increases from bottom to top. The thickness of the second metal group decreases from bottom to top This allows the current transmitted from the bonding portion 139 to be quickly transmitted laterally in the second metal group between the two layers of the first metal group, slowing down the speed at which the current is vertically transmitted to the metal below the bonding portion 139. Especially when encountering a large EOS voltage shock, other components below the bonding portion 139 can be better protected from damage by the large voltage shock.

[0026] Furthermore, the material of the first metal group is Ti metal or Ni metal, and the material of the second metal group is Al metal or Cu metal or Au metal.

[0027] The substrate 10 is made of a transparent AlO substrate.

[0028] It is understandable that the AlO substrate 10 has the characteristics of mature preparation technology, low price, easy cleaning and processing, and good stability at high temperature.

[0029] Furthermore, the material of the current spreading layer 12 is InO, SnO or InO·SnO, and its thickness is between

[0030] Furthermore, the material of the ohmic contact portion 135 is Cr metal, Ni metal, CrNi alloy metal, and the thickness is between The reflective portion 136 is made of Al metal or AlCu alloy metal, and has a thickness between The material of the protection part 137 is Ti metal or TiW alloy metal, and the thickness is between The wire bonding portion 139 is made of Au metal and has a thickness between

[0031] Furthermore, the light emitting diode chip includes an insulating protective layer 14, the insulating protective layer 14 is disposed on the N-type semiconductor layer 111, the insulating protective layer is made of SiO or SiN or AlO, and has a thickness between

[0032] It can be understood that by providing the insulating protection layer 14, the active light-emitting layer 112, the P-type semiconductor layer 113 and the side wall of the current spreading layer 12 are protected from being polluted by external water vapor, thereby preventing the light-emitting diode chip from short-circuiting.

[0033] In summary, the light-emitting diode chip in the above-mentioned embodiments of the utility model increases the anti-EOS ability of the light-emitting diode chip by setting an anti-EOS part in the P-type electrode and the N-type electrode; specifically, by setting electrode pads and electrode fingers in the N-type electrode and the P-type electrode, the light-emitting diode chip and the packaging bracket can be electrically connected through the electrode pads, and the current can be transmitted to various parts of the light-emitting diode chip through the electrode fingers, and the ohmic contact part, the reflection part, the protection part, the anti-EOS part and the wiring part are deposited and set in sequence along the thickness direction of the electrode pad and the electrode finger, and multiple groups of first metal groups and multiple groups of second metal groups are alternately set, and the thickness of the first metal group increases from bottom to top, and the thickness of the second metal group decreases from bottom to top, so that the current transmitted from the wiring part is quickly transmitted laterally in the second metal group between the two layers of the first metal group, and the speed of the current vertically transmitted to the metal below the wiring part is slowed down, thereby protecting the metal below the wiring part from being damaged by the impact of large voltage.

[0034] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0035] The above-mentioned embodiments only express several implementation methods of the utility model, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent of the utility model. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the utility model, and these all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. A light emitting diode chip, characterized in that: It includes a substrate, an epitaxial layer and a current spreading layer which are sequentially deposited along the thickness direction thereof, an N-type electrode is arranged on the epitaxial layer, a P-type electrode electrically connected to the current spreading layer is arranged on the current spreading layer, an anti-EOS part is arranged in the N-type electrode and the P-type electrode, and the anti-EOS part is composed of a plurality of first metal groups and a plurality of second metal groups arranged alternately, the thickness of the first metal group increases sequentially from bottom to top, the thickness of the second metal group decreases sequentially from bottom to top, and the resistance of the first metal group is greater than that of the second metal group.

2. The light emitting diode chip according to claim 1, characterized in that: The thickness of the first metal group increases from bottom to top The thickness of the second metal group decreases from bottom to top 3. The light emitting diode chip according to claim 2, characterized in that: The material of the first metal group is Ti metal or Ni metal, and the material of the second metal group is Al metal, Cu metal or Au metal.

4. The light emitting diode chip according to claim 1, characterized in that: The N-type electrode and the P-type electrode each include an electrode pad and an electrode finger connected to the electrode pad at one end, and the electrode pad and the electrode finger each include an ohmic contact portion, a reflection portion, a protection portion, the anti-EOS portion and a bonding portion sequentially deposited along the thickness direction thereof.

5. The light emitting diode chip according to claim 4, characterized in that: The ohmic contact portion is made of Cr metal, Ni metal or CrNi alloy metal, and has a thickness between The reflective portion is made of Al metal or AlCu alloy metal with a thickness between The material of the protection part is Ti metal or TiW alloy metal, and the thickness is between The material of the wire bonding part is Au metal, and the thickness is between 6. The light emitting diode chip according to claim 1, characterized in that: The substrate is made of AlO or GaN transparent substrate.

7. The light emitting diode chip according to claim 1, characterized in that: The epitaxial layer includes an N-type semiconductor layer, an active light-emitting layer, and a P-type semiconductor layer arranged in sequence from bottom to top, the current spreading layer is placed on the P-type semiconductor layer and is electrically connected to the P-type semiconductor layer, the current spreading layer is made of InO, SnO, or InO·SnO, and has a thickness between 8. The light emitting diode chip according to claim 7, characterized in that: A conductive step of the N-type semiconductor layer is provided on the N-type semiconductor layer, the N-type electrode is provided on the conductive step, and the conductive step is electrically connected to the N-type electrode.

9. The light emitting diode chip according to claim 8, characterized in that: The light emitting diode chip further comprises an insulating protective layer, which is disposed on the N-type semiconductor layer. The insulating protective layer is made of SiO or SiN or AlO and has a thickness between

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