Heat reflection assembly, heat reflection device thereof and film processing device

Abstract

The utility model discloses a heat reflection assembly, a heat reflection device thereof and a film processing device, the heat reflection assembly is used for protecting a cavity bottom wall of the film processing device, and the heat reflection assembly comprises a first quartz structure; at least partial area of the second quartz structure is located below the first quartz structure; the upper surface of the heat reflecting plate is a mirror surface, and the first quartz structure and the second quartz structure surround the heat reflecting plate in a sealed mode. The heat reflection assembly has the advantages that the heat reflection assembly combines the first quartz structure, the second quartz structure and the heat reflection plate, heat radiation is reflected through the heat reflection plate, the utilization rate of heat energy in a cavity can be improved, energy loss in the technological process is reduced, meanwhile, the first quartz structure and the second quartz structure surround the heat reflection plate in a sealed mode, and the heat reflection effect is improved. And the heat reflection effect and the service life are ensured.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor equipment, in particular to a heat reflection component for protecting a cavity bottom wall of a thin film processing device, a heat reflection device and a thin film processing device. Background Art

[0002] In the production process of semiconductor devices, a lot of micromachining is usually required. At present, chemical vapor deposition, physical vapor deposition and other processes are often used to micro-process semiconductor process parts or substrates, such as manufacturing flexible display screens, flat panel displays, light-emitting diodes, solar cells, etc. Micromachining manufacturing includes a variety of different processes and steps. Among them, the most widely used is the chemical vapor deposition process, which can deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials, such as depositing materials such as silicon, silicon carbide, zinc oxide, etc. on substrates or other surfaces.

[0003] Chemical vapor deposition refers to a method in which chemical gases or vapors react on the surface of a substrate to synthesize coatings or nanomaterials. Generally speaking, its principle is to use a carrier gas to carry gaseous reactants or precursors into a reaction chamber carrying a substrate. Specifically, a chemical vapor deposition device usually uses multiple heating devices to heat the substrate and the gaseous reactants in the chamber to increase their temperature, and then triggers a chemical reaction between a single or several gases under high temperature conditions. Each gaseous reactant decomposes and recombine to generate a new solid substance, which is then deposited on the surface of the substrate to form the desired film. However, in actual applications, the heat provided by the heating device not only acts on the substrate, but also on other components that are not expected to be heated, resulting in accelerated aging or damage of the components, affecting the service life of the components, and also wasting a lot of energy, resulting in high process energy consumption. Therefore, it is necessary to improve the existing device.

[0004] It is to be understood that the above statements merely provide background technology related to the present invention and do not necessarily constitute prior art. Utility Model Content

[0005] Based on the above-mentioned technical problems, the purpose of the utility model is to provide a heat reflection component and its heat reflection device and a thin film processing device. The heat reflection component combines a first quartz structure, a second quartz structure and a heat reflection plate, and reflects the heat radiation generated by the heating device through the heat reflection plate, which helps to improve the utilization rate of the thermal energy in the cavity and reduce the energy loss in the process. At the same time, it also surrounds the heat reflection plate with the first quartz structure and the second quartz junction to seal it, which helps to ensure its heat reflection effect and its service life.

[0006] In order to achieve the above object, the utility model is implemented through the following technical solutions:

[0007] A heat reflection assembly for protecting the bottom wall of a cavity of a thin film processing device, comprising:

[0008] First quartz structure;

[0009] a second quartz structure, at least a portion of which is located below the first quartz structure;

[0010] The heat reflection plate has a mirror surface on its upper surface, and the first quartz structure and the second quartz structure surround the heat reflection plate in a sealed manner.

[0011] Optionally, the first quartz structure includes a first plate structure and a first extension portion extending downwardly along the first plate structure, and the first extension portion surrounds the edge of the heat reflecting plate;

[0012] The second quartz structure includes a second plate structure, and the second plate structure is provided with a first accommodating structure matching the first extension portion.

[0013] Optionally, a cross-section of the first containing structure includes a step structure or a groove structure.

[0014] Optionally, the second quartz structure includes a third plate structure and a second extension portion extending upwardly along the third plate structure, and the second extension portion surrounds the edge of the heat reflecting plate;

[0015] The first quartz structure includes a fourth plate structure, and a second accommodating structure matching the second extension portion is formed on the fourth plate structure.

[0016] Optionally, a cross-section of the second containing structure includes a step structure or a groove structure.

[0017] Optionally, the second quartz structure includes a plurality of supporting structures for supporting the heat reflecting plate to form a plurality of heat insulating gaps with the lower surface of the heat reflecting plate.

[0018] Optionally, the supporting structure is a cylinder or an annular cylinder or a cone or an annular cone.

[0019] Optionally, the first quartz structure is an integrated structure;

[0020] The second quartz structure is an integrated structure.

[0021] Optionally, the first quartz structure is a ring structure;

[0022] The heat reflection plate is a ring structure;

[0023] The second quartz structure is a ring structure.

[0024] Optionally, the roughness of the upper surface of the heat reflecting plate is less than 0.2.

[0025] Optionally, the emissivity of the heat reflecting plate is less than 0.3.

[0026] Optionally, the heat reflecting plate is made of at least one of stainless steel, nickel, molybdenum, gold or a composite material with high heat reflecting ability.

[0027] Optionally, a heat reflection device for protecting a bottom wall of a cavity of a thin film processing device comprises:

[0028] At least two of the aforementioned heat reflection components are stacked from top to bottom.

[0029] Optionally, the adjacent second quartz structure and the first quartz structure in the heat reflection device are integrally arranged.

[0030] Optionally, the structures of the heat reflection components are the same.

[0031] Optionally, a thin film processing device comprises:

[0032] A reaction chamber, comprising a chamber top cover, chamber side walls and chamber bottom wall, wherein a base for carrying a substrate is arranged in the reaction chamber;

[0033] A heating device, which is arranged at the bottom of the base;

[0034] At least one of the aforementioned heat reflection components is disposed on the bottom wall of the cavity.

[0035] Optionally, also include:

[0036] A graphite inner wall is arranged along at least a portion of the inner surface of the cavity side wall and the cavity top cover.

[0037] Compared with the prior art, the utility model has the following advantages:

[0038] In a heat reflection component and its heat reflection device and a thin film processing device of the utility model, the heat reflection component reflects the heat energy generated by the heating device through the heat reflection plate to prevent the bottom wall of the cavity from absorbing too much heat energy. At the same time, it also improves the utilization rate of the heat energy generated by the heating device and reduces the energy loss in the process. On the other hand, the heat reflection component surrounds and seals the heat reflection plate through the first quartz structure and the second quartz structure to isolate the heat reflection plate from the cavity environment, avoid corrosion of the heat reflection plate by the gas in the cavity, and help to ensure its service life and its heat reflection effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a schematic diagram of a thin film processing device of the utility model;

[0040] Figure 2 for Figure 1 An enlarged exploded cross-sectional view of the structure at point A;

[0041] Figure 3 It is an exploded cross-sectional view of a heat reflection device of the utility model;

[0042] Figure 4 This is a schematic diagram of the surface temperature distribution of a portion of the bottom wall of the cavity without using a heat reflection component according to the utility model;

[0043] Figure 5 It is a schematic diagram of the surface radiance of a portion of the bottom wall of the cavity without using a heat reflection component according to the present invention;

[0044] Figure 6 A schematic diagram of the surface temperature distribution of a portion of the bottom wall of a cavity using a heat reflection component according to the present invention;

[0045] Figure 7 It is a schematic diagram of the surface radiance of a portion of the bottom wall of a cavity using a heat reflection component according to the present invention. DETAILED DESCRIPTION

[0046] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0047] It should be noted that, in this article, the terms "include", "comprises", "has" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "includes..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.

[0048] It should be noted that the drawings are all in very simplified form and use inaccurate ratios, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present utility model.

[0049] like Figure 1, which is a schematic diagram of a thin film processing device (metal vapor deposition device MOCVD) of the present invention, the device comprises a reaction chamber 100, and the reaction chamber 100 can be used to process one or more substrates W, including depositing materials on the upper surface of the substrate W. The chamber body of the reaction chamber 100 comprises a chamber top cover 101, a chamber bottom wall 103, and a chamber side wall 102 located between the chamber top cover 101 and the chamber bottom wall 103, the three of which enclose a processing space, and the interior of the reaction chamber 100 is kept in a vacuum sealed state during the process. The reaction chamber 100 is provided with a susceptor 110, i.e., a tray structure, for carrying a substrate W. The susceptor 110 includes a first quartz tray 111, a second quartz tray 112, and a graphite tray 113. The first quartz tray 111 is placed on a cylindrical rotating seat, the graphite tray 113 is an annular structure, the second quartz tray 112 presses the inner side of the graphite tray 113 onto the first quartz tray 111, and the second quartz tray 112 is also connected to a rotating shaft for rotation. The upper surface of the graphite tray 113 includes a plurality of recessed portions, and the recessed portions include a plurality of planetary disks, each of which is used to carry a substrate W to be processed.

[0050] A gas delivery device 120 is installed at the top cover of the chamber, and the gas delivery device 120 is connected to the gas supply device to supply process gas into the chamber. The process gas includes a first gas and a second gas. The first gas is usually a metal organic gas containing gallium, such as trimethyl gallium (TMG), and the second gas is usually a nitrogen-containing gas, such as ammonia (NH3). The first gas and the second gas will not be mixed before entering the reaction chamber 100. In this embodiment, the gas delivery device 120 delivers the process gas from the central area inside the chamber to the edge area of ​​the chamber to deliver the process gas to the substrate W carried by the graphite tray 113. A pumping ring 130 is also arranged around the base 110. The pumping ring 130 is provided with a plurality of pumping holes connected to a vacuum pump to vacuum the reaction chamber 100. Optionally, each pumping hole is evenly arranged along the circumference and connected to a common vacuum pump to avoid biased pumping.

[0051] like Figure 1As shown, a heating device 140 is provided at the bottom of the susceptor 110 to heat the susceptor 110 and the substrate W carried thereon to reach a suitable reaction temperature (>1000°C). In this embodiment, the heating device 140 comprises a plurality of heating coils. A cooling channel 104 for circulating a cooling liquid is provided in the bottom wall 103 of the cavity to prevent the bottom wall 103 of the cavity from being overheated during the reaction. The thin film processing device further comprises a graphite inner wall 105, which is arranged along at least part of the inner surface of the cavity side wall 102 and the cavity top cover 101. In this embodiment, the graphite inner wall 105 is arranged around the upper part of the inner surface of the cavity side wall 102 and the inner surface of the cavity top cover 101. During the process, the graphite inner wall 105 is a hot wall, which can reduce the temperature gradient in the space surrounded by the cavity top cover 101, the cavity side wall 102 and the susceptor 110, and improve the uniformity of the temperature distribution of the process gas.

[0052] When a process reaction (e.g., epitaxial growth process) is performed, the susceptor 110 is heated to a desired temperature (e.g., about 1000° C.) by means of a heating device 140 below the susceptor 110, and several process gases required for epitaxial growth enter the reaction chamber through the gas delivery device 120, and are guided to the heated susceptor 110 and the substrate W carried by the susceptor 110. The process gases are uniformly mixed and distributed on the surface of the susceptor 110 and the substrate W, and decompose and react under high temperature conditions, thereby depositing an epitaxial layer on the substrate W. The reacted gases and reaction by-products are discharged to the outside through the exhaust ring 130 and the vacuum pump.

[0053] As can be seen from the above, during the process treatment, the temperature in the cavity is usually high, and the heat energy provided by the heating device 140 not only acts on the base 110 and the substrate W. Since there is no heat insulation device under the base 110 and the heating device 140, it is easy to cause a large amount of radiant heat energy generated by the heating device 140 to be absorbed by the bottom wall 103 of the cavity and carried away by the cooling liquid in the cooling channel 104 of the bottom wall 103 of the cavity, which wastes a lot of heat energy and leads to high energy consumption of the whole process. At the same time, since the bottom wall 103 of the cavity is in the high-temperature radiation state of the heating device 140 for a long time, it will absorb more radiant heat, resulting in its temperature being relatively high, which may easily cause accelerated aging or damage to the bottom wall 103 of the cavity, affecting its service life or the environment in the cavity. For example, due to aging of the side of the bottom wall 103 of the cavity facing the heating device 140, the pressure-bearing capacity of the bottom wall 103 of the cavity becomes weaker, which may easily affect the vacuum degree in the reaction chamber 100, or due to the long-term high-temperature state, particles may fall off the bottom wall 103 of the cavity, causing pollution to the environment in the cavity and affecting the cleanliness of the cavity.

[0054] Based on the above problems, the utility model provides a heat reflection component 150 for protecting the bottom wall 103 of the cavity of the thin film processing device, such as Figure 1 and Figure 2 As shown, the heat reflection component 150 is arranged on the bottom wall 103 of the cavity. The heat reflection component 150 reflects the radiant heat energy sent by the heating device 140 to the bottom wall 103 of the cavity through the heat reflection plate 153, so that the radiant heat energy generated by the heating device 140 can act on the base 110 and the substrate W supported by it as much as possible. At the same time, the heat reflection plate 153 is surrounded and sealed by a quartz structure to prevent the heat reflection plate 153 from being damaged (for example, corroded by the gas in the cavity).

[0055] Specifically, Figure 2 As shown, the heat reflection assembly 150 includes a first quartz structure 151, a second quartz structure 152 and a heat reflection plate 153, at least part of the second quartz structure 152 is located below the first quartz structure 151, the upper surface of the heat reflection plate 153 is a mirror surface or a near mirror surface, and the first quartz structure 151 and the second quartz structure 152 surround the heat reflection plate 153 and seal it. The utility model reflects the radiant heat energy generated by the heating device 140 to the base 110 and the substrate W carried by it as much as possible through the mirror surface or near mirror surface characteristics of the heat reflection plate 153, which helps to improve the utilization rate of the radiant heat energy of the heating device 140 and reduce the energy loss in the process; at the same time, the heat reflection assembly 150 surrounds the heat reflection plate 153 and seals it through the first quartz structure 151 and the second quartz structure 152, even if some gas diffuses to the bottom of the base 110, it will not cause corrosion to the heat reflection plate 153, reducing the possibility of damage to the heat reflection plate 153, helping to increase its service life and ensure its heat reflection effect. On the other hand, the heat reflection component 150 is arranged above the cavity bottom wall 103 instead of being arranged next to the heating device 140, which can effectively protect the cavity bottom wall 103, reduce the possibility of damage and slow down its aging; at the same time, the heat reflection component 150 also helps to protect the cavity environment. When process gas or gas by-product diffuses between the heating device 140 and the cavity bottom wall 103, since there is still some heat energy between the two, the process gas or gas by-product will not solidify on the parts in the space due to a sudden drop in temperature / too low, but will diffuse in a gasified state until it is extracted, avoiding pollution of the cavity environment. On the other hand, since the quartz material is a heat radiation transparent material, the first quartz structure 151 and the second quartz structure 152 will not absorb too much heat during the process, avoiding the absorption of too much heat energy and causing themselves to become a heat source to heat the cavity bottom wall 103, which helps to cool the cavity bottom wall 103.

[0056] As can be seen from the above, the first quartz structure 151 and the second quartz structure 152 of the heat reflection component 150 have low absorption and reflection effects on thermal energy, and mainly rely on the heat reflection plate 153 to reflect the thermal energy generated by the heating device 140 to improve the utilization rate of thermal energy and reduce the energy loss in the process. Therefore, the higher the thermal reflection performance of the heat reflection plate 153, the stronger its reflection effect on thermal energy. Optionally, the roughness of the upper surface of the heat reflection plate 153 is less than 0.2, so that the mirror feature of the heat reflection plate 153 is stronger and the heat reflection performance is stronger. On the other hand, optionally, the emissivity of the heat reflection plate 153 is less than 0.3. The emissivity is the ability of the measured object to emit infrared energy. The value of the emissivity can range from 0 (bright mirror) to 1.0 (black body). The closer the emissivity of the heat reflection plate 153 is to the bright mirror, the stronger its radiation performance of thermal energy. In practical applications, the heat reflection plate 153 can be made of at least one of stainless steel, nickel, molybdenum, gold or a composite material with high heat reflection ability, and of course other materials can also be used. Further, in practical applications, the heat reflection performance of heat energy can be ensured by adding a heat reflection coating. Optionally, the heat reflection coating is sprayed on at least one of the heat reflection plate 153, the lower surface of the first quartz structure 151 and the upper surface of the second quartz structure 152 to enhance the heat reflection effect of the heat reflection component 150 on heat energy and improve energy utilization.

[0057] On the other hand, in this embodiment, the heat reflection assembly 150 is an annular structure, and the middle space of the annular structure is passed through by the rotating seat to support the base 110 (see Figure 1 ). Specifically, the first quartz structure 151, the heat reflection plate 153 and the second quartz structure 152 are all annular structures. In this embodiment, the first quartz structure 151 and the second quartz structure 152 overlap and surround and seal the heat reflection plate 153.

[0058] like Figure 2The figure is a partial cross-sectional schematic diagram of the heat reflection assembly 150. In this embodiment, the first quartz structure 151 includes a first plate structure 154 and a first extension portion 155 extending downwardly from the first plate structure 154, and the first extension portion 155 surrounds the edge of the heat reflection plate 153; the second quartz structure 152 includes a second plate structure 156, and a first accommodating structure 157 matching the first extension portion 155 is provided on the second plate structure 156. The heat reflection plate 153 is surrounded and sealed by the first extension portion 155 at the edge of the first plate structure 154 and the first accommodating structure 157 of the second plate structure 156, which can not only ensure the radiation efficiency of the heat energy of the heating device 140, but also prevent the corrosive gas in the process from corroding the heat reflection plate 153, thereby ensuring its reflection effect and helping to ensure its service life.

[0059] In this embodiment, the first extension portion 155 includes two annular protrusions extending downward from the inner ring edge and the outer ring edge of the first plate body structure 154, and the cross-section of the first containing structure 157 includes two annular step structures opened at the inner ring edge and the outer ring edge of the second plate body structure 156. In the installed state, the first extension portion 155 is placed in the first containing structure 157, i.e., the step structure, to surround and protect the heat reflecting plate 153, form a seal with it, and prevent the heat reflecting plate 153 from being damaged.

[0060] Further, such as Figure 1 and Figure 2 As shown, in this embodiment, the second quartz structure 152 is placed on the cavity bottom wall 103, and the upper surface of the second quartz structure 152 also includes a plurality of support structures 158 for supporting the heat reflecting plate 153, so as to form a plurality of heat insulating gaps with the lower surface of the heat reflecting plate 153. As can be seen from the above, the heat reflecting plate 153 is only in contact with the support structure 158 of the second quartz structure 152, which reduces the contact area between the two and helps to reduce the heat transfer between the two. In the process, even if the heat reflecting plate 153 is heated when reflecting heat energy, causing its temperature to rise, the small contact area between the heat reflecting plate 153 and the second quartz structure 152 and the heat insulating gap between the two will also make the heat of the heat reflecting plate 153 transferred to the second quartz structure 152 as little as possible, thereby reducing the heat energy transferred to the cavity bottom wall 103, and avoiding adverse effects on the cavity bottom wall 103. Optionally, the support structure 158 is a column or an annular column or a cone or an annular cone. Of course, the support structure 158 may also be other protruding structures to support the heat reflecting plate 153 , thereby isolating the heat reflecting plate 153 from the cavity bottom wall 103 , and the present invention does not impose any limitation on this.

[0061] Furthermore, in the present embodiment, the first quartz structure 151 is an integrally arranged structure, and the second quartz structure 152 is also an integrally arranged structure, which facilitates processing and preparation, and also helps to ensure the stability of the structure; on the other hand, the integrally arranged first quartz structure 151 and the second quartz structure 152 reduce the gap in the space surrounded by the two, which helps to ensure the sealing performance of the space surrounded by the two, so that the heat reflecting plate 153 is isolated from the cavity environment as much as possible, avoiding the cavity environment from causing corrosion or other damage to the heat reflecting plate 153, affecting its performance or service life.

[0062] It is understandable that the cross section of the first containing structure 157 is not limited to a step structure, and in other embodiments, it can also be other structures that can accommodate the first extension portion 155. For example, in another embodiment, the cross section of the first containing structure 157 includes a groove structure, and the first extension portion 155 is placed in the groove structure to surround and seal the heat reflecting plate 153, so as to increase the sealing protection performance of the heat reflecting plate 153. Further, the first quartz structure 151 and / or the heat reflecting plate 153 and / or the second quartz structure 152 are not limited to the above-mentioned annular structure, and they can also be other structural types, and the utility model does not limit this. For example, in another embodiment, the heat reflecting plate 153 is a rectangular structure. Of course, the heat reflecting assembly 150 is not limited to including one heat reflecting plate 153.

[0063] On the other hand, the first quartz structure 151 and the second quartz structure 152 are not limited to the combination of the above-mentioned convex and concave structures. In other embodiments, they can also be other combinations, and the utility model does not limit this. For example, in another embodiment, the second quartz structure 152 includes a third plate structure and a second extension extending upward along the third plate structure, and the second extension surrounds the edge of the heat reflection plate 153; the first quartz structure 151 includes a fourth plate structure, and the fourth plate structure is provided with a second accommodating structure matching the second extension. In this embodiment, the heat reflection plate 153 is surrounded and sealed by the second accommodating structure of the fourth plate structure and the second extension of the third plate structure, so as to ensure the reflection performance and service life of the heat reflection assembly 150. Similar to this embodiment, in this embodiment, the cross-section of the second accommodating structure may include a step structure or a groove structure. It can be understood that in other embodiments, the heat reflection assembly 150 can also simultaneously adopt the first extension 155 and the first accommodating structure 157, as well as the second extension and the second accommodating structure to adapt to different application requirements. For example, in another embodiment, the first quartz structure 151 and the second quartz structure 152 are both annular structures, and the inner ring edges of the first quartz structure 151 and the second quartz structure 152 use the first extension part 155 and the first containing structure 157, and the outer ring edges of the two use the second extension part and the second containing structure. Multiple containing structures are used to arrange multiple layers of heat reflection plates to further improve the heat protection of the chamber and improve the heating efficiency in the chamber.

[0064] In actual processes, when the process temperature is too high, the above-mentioned heat reflection component 150 may not be able to completely and effectively isolate the heat, that is, the heat blocking effect of a heat reflection plate 153 is limited. Based on this problem, the utility model also provides a heat reflection device for protecting the cavity bottom wall 103 of a thin film processing device, the heat reflection device comprises at least two of the above-mentioned heat reflection components 150 stacked from top to bottom, that is, the heat reflection device is designed with a two-layer or multi-layer heat reflection component 150 structure to ensure the heat reflection and heat insulation effect of thermal energy, reduce the temperature of the cavity bottom wall 103 and its surface radiance, thereby avoiding the temperature of the cavity bottom wall 103 being too high, and at the same time reducing the heat energy loss in the process, which helps to save energy.

[0065] like Figure 3As shown, it is a schematic diagram of a heat reflection device in an embodiment. In this embodiment, the heat reflection device includes two heat reflection components 150 stacked from top to bottom, and its structure is as follows from top to bottom: a first quartz structure 151, a heat reflection plate 153, a second quartz structure 152, a first quartz structure 151, a heat reflection plate 153 and a second quartz structure 152. In this embodiment, the adjacent second quartz structure 152 and the first quartz structure 151 in the heat reflection device are integrally arranged for processing and preparation, and also help to reduce the workload during the installation process, such as the integrally arranged part does not need to be aligned. It can be understood that the structure of each heat reflection component 150 of the heat reflection device is not limited to the above embodiment, and in other embodiments, it can also be other arrangements and combinations. For example, in another embodiment, the structure of each heat reflection component 150 of the heat reflection device is the same, that is, a plurality of heat reflection components 150 with the same structure are stacked and arranged from top to bottom for processing and preparation and placement.

[0066] To verify the use effect of the heat reflection assembly 150 of the utility model, Figures 4 to 7 As shown, the applicant team conducted a simulation experiment. Figure 4 and Figure 5 They are respectively a schematic diagram of surface temperature distribution and a schematic diagram of surface radiance of a portion of the cavity bottom wall 103 of the thin film processing device without using the heat reflection component 150 when the process time is 3600s, Figure 6 and Figure 7 They are respectively a schematic diagram of the surface temperature distribution and a schematic diagram of the surface radiance of a portion of the cavity bottom wall 103 at the same position when the thin film processing device uses the heat reflection component 150 at the same time. Figure 4 and Figure 5 It can be seen that when the heat reflection component 150 is not used, the temperature of the cavity bottom wall 103 is higher, and the surface radiation on the cavity bottom wall 103 is larger; Figure 6 and Figure 7 It can be seen that after installing the heat reflection component 150, the temperature and surface radiation of the cavity bottom wall 103 are significantly reduced. Therefore, the heat reflection component 150 of the utility model can effectively reflect the heat energy of the heating device 140, avoid the temperature of the cavity bottom wall 103 being too high during the process, and the heat reflection component 150 can improve the utilization rate of heat energy during the process, reduce the energy consumption of the system during the process, and help save energy.

[0067] It should be noted that the heat reflection assembly 150 and the heat reflection device of the present invention are not limited to the above-mentioned film processing device. In other embodiments, they can also be used in film processing devices of other structural types, and the present invention does not impose any limitation on this.

[0068] To summarize, in a heat reflection component 150 and its heat reflection device and thin film processing device of the utility model, the heat reflection component 150 reflects the heat energy of the heating device 140 through the heat reflection plate 153 to prevent the bottom wall 103 of the cavity from being excessively affected by the heat energy, thereby protecting the bottom wall 103 of the cavity and improving the utilization efficiency of the heat energy in the cavity, which helps to reduce the heat energy loss in the process; on the other hand, the heat reflection component 150 also surrounds and seals the heat reflection plate 153 through the first quartz structure 151 and the second quartz structure 152 to isolate the heat reflection plate 153 from the cavity environment, thereby avoiding erosion of the heat reflection plate 153 and affecting its heat emission capability, which helps to ensure its service life and heat reflection effect.

[0069] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. A heat reflection assembly for protecting the bottom wall of a cavity of a thin film processing device, characterized in that: Include: First quartz structure; a second quartz structure, at least a portion of which is located below the first quartz structure; The heat reflection plate has a mirror surface on its upper surface, and the first quartz structure and the second quartz structure surround the heat reflection plate in a sealed manner.

2. The heat reflection assembly according to claim 1, characterized in that: The first quartz structure comprises a first plate structure and a first extension portion extending downwardly from the first plate structure, wherein the first extension portion surrounds an edge of the heat reflection plate; The second quartz structure includes a second plate structure, and the second plate structure is provided with a first accommodating structure matching the first extension portion.

3. The heat reflection assembly according to claim 2, characterized in that: A cross section of the first containing structure includes a step structure or a groove structure.

4. The heat reflection assembly according to claim 1, characterized in that: The second quartz structure comprises a third plate structure and a second extension portion extending upwardly along the third plate structure, wherein the second extension portion surrounds the edge of the heat reflecting plate; The first quartz structure includes a fourth plate structure, and a second accommodating structure matching the second extension portion is formed on the fourth plate structure.

5. The heat reflection assembly according to claim 4, characterized in that: A cross section of the second containing structure includes a step structure or a groove structure.

6. The heat reflection assembly according to claim 1, characterized in that: The second quartz structure includes a plurality of supporting structures for supporting the heat reflecting plate, so as to form a plurality of heat insulating gaps with the lower surface of the heat reflecting plate.

7. The heat reflection assembly according to claim 6, characterized in that: The supporting structure is a cylinder or an annular cylinder or a cone or an annular cone.

8. The heat reflection assembly according to claim 1, characterized in that: The first quartz structure is an integrated structure; The second quartz structure is an integrated structure.

9. The heat reflection assembly according to claim 1, characterized in that: The first quartz structure is a ring structure; The heat reflection plate is a ring structure; The second quartz structure is a ring structure.

10. The heat reflection assembly according to claim 1, characterized in that: The roughness of the upper surface of the heat reflection plate is less than 0.

2.

11. The heat reflection assembly according to claim 1, characterized in that: The emissivity of the heat reflecting plate is less than 0.

3.

12. The heat reflection assembly according to claim 1, characterized in that: The heat reflection plate is made of at least one material selected from stainless steel, nickel, molybdenum, gold or a composite material with high heat reflection capability.

13. A heat reflection device for protecting the bottom wall of a cavity of a thin film processing device, characterized in that: Include: At least two heat reflection assemblies as claimed in any one of claims 1 to 12 are stacked from top to bottom.

14. The heat reflection device according to claim 13, characterized in that: The adjacent second quartz structure and the first quartz structure in the heat reflection device are integrally arranged.

15. The heat reflection device according to claim 13, characterized in that: The structures of the heat reflection components are the same.

16. A thin film processing device, characterized in that: Include: A reaction chamber, comprising a chamber top cover, chamber side walls and chamber bottom wall, wherein a base for carrying a substrate is arranged in the reaction chamber; A heating device, which is arranged at the bottom of the base; At least one heat reflection assembly according to any one of claims 1 to 12 is arranged on the bottom wall of the cavity.

17. The thin film processing device according to claim 16, characterized in that: Also includes: A graphite inner wall is arranged along at least a portion of the inner surface of the cavity side wall and the cavity top cover.

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