Epitaxial deposition equipment

Abstract

An epitaxial deposition apparatus includes: a chamber body having a processing space therein; the substrate supporting piece is arranged in the chamber main body; the lining is arranged in the chamber main body and arranged on the periphery of the substrate supporting piece in a surrounding manner, and the lining comprises a first end and a second end in the diameter direction of the lining; the gas input assembly is arranged at the first end, a first gas conveying pipeline is arranged in the gas input assembly, and the first gas conveying pipeline is connected with an auxiliary gas source; the gas output assembly is arranged at the second end, and a gas output pipeline is arranged in the gas output assembly; a second gas conveying channel and a third gas conveying pipeline which are communicated with each other are arranged in the lining, the second gas conveying channel is communicated with the first gas conveying pipeline, the lining comprises an adjusting area extending from the input gas assembly to the output gas assembly in the circumferential direction of the lining, and the third gas conveying pipeline extends to the adjusting area. And the third gas conveying pipeline is communicated with the treatment space. The thickness uniformity of a thin film formed by the epitaxial deposition equipment is relatively high.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to an epitaxial deposition device. Background Art

[0002] Epitaxial growth refers to the process of transporting gaseous compounds to a single crystal substrate and growing it in the direction of the substrate to obtain a single crystal material layer with the same lattice arrangement as the substrate. Currently, epitaxial growth has been widely used in the fields of nanomaterial preparation, power devices, semiconductor optoelectronic devices, solar photovoltaics and integrated circuits.

[0003] However, with the shrinking feature size of semiconductor devices and the increasing integration of devices, higher and higher requirements are placed on the uniformity of chemical vapor deposition films. Although chemical vapor deposition devices have been upgraded many times and their performance has been greatly improved, there are still many deficiencies in the uniformity of thin film deposition. In particular, with the increasing size of substrates, the existing vapor deposition methods and equipment can no longer meet the uniformity requirements of thin films. Therefore, a new epitaxial deposition device is urgently needed to improve the uniformity of thin film deposition. Utility Model Content

[0004] The utility model aims to provide an epitaxial deposition device which can improve the uniformity of a thin film.

[0005] To achieve the above-mentioned purpose, the utility model provides an epitaxial deposition device, comprising: a chamber body, which contains a processing space; a substrate support member, which is arranged in the chamber body and is used to support a substrate; a liner, which is arranged in the chamber body and is arranged around the periphery of the substrate support member, and the liner includes a first end and a second end along its diameter direction; an input gas component, which is arranged at the first end and has a first gas delivery pipeline arranged therein, and the first gas delivery pipeline is connected to an auxiliary gas source; an output gas component, which is arranged at the second end and has a gas output pipeline arranged therein, and the gas output pipeline is connected to the processing space; a second gas delivery channel and a third gas delivery pipeline which are interconnected are arranged in the liner, and the second gas delivery channel is connected to the first gas delivery pipeline, and the liner includes a regulation area along its circumference extending from the edge of the input gas component to the edge of the output gas component, and the third gas delivery pipeline extends to the regulation area, and the third gas delivery pipeline is connected to the processing space and is used to deliver auxiliary gas to the processing space.

[0006] Optionally, the liner includes: a middle liner and an upper liner located above the middle liner, and the input gas assembly and the output gas assembly are respectively connected to the middle liner.

[0007] Optionally, the second gas delivery pipeline includes an arc channel and a longitudinal channel that are interconnected, the arc channel is arranged along the circumference of the middle liner, the two ends of the arc channel are respectively connected to the first gas delivery pipeline and the longitudinal channel, the other end of the longitudinal channel is connected to the third gas delivery pipeline, and the arc channel is arranged in the middle liner.

[0008] Optionally, the liner also includes: a plug-in arranged between the middle liner and the upper liner, the upper liner is provided with a first groove which is recessed with the bottom surface thereof, the first groove is used to accommodate the plug-in, and the longitudinal channel and the third gas delivery pipeline are arranged in the plug-in.

[0009] Optionally, the number of the arc-shaped channels is one, the number of the plug-ins is multiple, the multiple plug-ins are distributed along the circumference of the arc-shaped channel, and the longitudinal channel in each plug-in is connected to the arc-shaped channel.

[0010] Optionally, there are multiple arc-shaped pipes, and the multiple arc-shaped channels are arranged up and down along the height direction of the middle liner, and each of the arc-shaped channels is connected to a longitudinal channel in the plug-in.

[0011] Optionally, the middle liner is provided with a second groove sunken in its upper surface, and the second groove and the upper liner constitute the second gas delivery pipeline; the liner also includes: at least two partitions arranged between the middle liner and the upper liner, the at least two partitions are arranged opposite to each other, and the partitions, the middle liner and the upper liner surround the third gas delivery pipeline.

[0012] Optionally, there are multiple second grooves, and the multiple second grooves are distributed along the circumference of the middle liner. The number of the second grooves is equal to the number of the third gas channels, and one second gas delivery pipeline is connected to one third gas delivery pipeline.

[0013] Optionally, a first process gas channel is further provided in the input gas assembly, and a second process gas channel is further provided in the lining, wherein the second process gas channel is connected to the first process gas channel and is used to transport process gas to the processing space; the first gas delivery pipeline is arranged below the first process gas channel.

[0014] Optionally, the distance from the first gas delivery pipeline to the gas output pipeline is smaller than the distance from the first process gas channel to the gas output pipeline.

[0015] Optionally, a straight line connecting the input gas assembly and the output gas assembly and passing through the center of the liner is defined as the centerline of the liner, and there are multiple second gas delivery pipelines, and the multiple second gas delivery pipelines are located on the same side of the centerline, or the multiple second gas delivery pipelines are located on different sides of the centerline.

[0016] Optionally, it also includes: a driving device for driving the base support to rotate along its central axis.

[0017] Optionally, the rotation direction of the base support is clockwise.

[0018] Optionally, it also includes: an upper cover, which is arranged above the upper lining; the lining also includes a lower lining, which is arranged below the middle lining; a lower cover, which is arranged below the lower lining, and the lining, upper cover and lower cover enclose the processing space.

[0019] Optionally, the third gas delivery pipeline is arranged toward the gas output pipeline.

[0020] Optionally, there are multiple third gas delivery pipelines, and the included angles between the center lines of different third gas delivery pipelines and the center line of the liner are different.

[0021] Optionally, it also includes: a substrate transfer port, which is used to transfer substrates into and out of the processing space; the substrate transfer port and the adjustment area are located on both sides of the center line.

[0022] Optionally, when the film thickness in the edge region of the substrate is greater than that in the central region, the auxiliary gas source is a cleaning gas, and the cleaning gas is used to remove the film in the edge region of the substrate.

[0023] Optionally, when the film thickness in the edge region of the substrate is smaller than that in the central region, the auxiliary gas source is a process gas, and the process gas is used to deposit a film in the edge region of the substrate.

[0024] Compared with the prior art, the technical solution of the utility model has at least the following beneficial effects:

[0025] In the utility model, although there is a temperature difference between the central area and the edge area of ​​the substrate, the first gas delivery pipeline in the input gas assembly is connected with the second gas delivery pipeline and the third gas delivery pipeline in the lining to deliver auxiliary gas to the edge area of ​​the substrate to compensate for the edge area of ​​the substrate, thereby improving the thickness uniformity of the film formed in the edge area and the central area of ​​the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1This is a schematic diagram of the structure of an epitaxial deposition device of the utility model;

[0027] Figure 2 for Figure 1 A perspective view of a liner, an input gas assembly, and an output gas assembly;

[0028] Figure 3 for Figure 2 A top view of the middle liner, the input gas assembly and the output gas assembly;

[0029] Figure 4 This is a schematic diagram of the structure of an arc-shaped channel and a longitudinal channel of the utility model;

[0030] Figure 5 This is a schematic diagram of the structure of another arc-shaped channel and a longitudinal channel of the utility model;

[0031] Figure 6 It is a three-dimensional diagram of another lining of the utility model;

[0032] Figure 7 for Figure 6 a top view of the liner, input gas assembly, and output gas assembly;

[0033] Figure 8 A top view of another middle liner, an input gas component and an output gas component of the utility model;

[0034] Fig. 9 A top view of another liner, an input gas component and an output gas component of the utility model;

[0035] Fig.10 for Figure 2 A stereogram of the plug-in. DETAILED DESCRIPTION

[0036] The following will be combined with the appended examples in the present utility model Figure 1 ~Attached Fig.10 , the technical scheme, structural features, objectives achieved and effects in the embodiments of the utility model are described in detail.

[0037] It should be noted that the drawings are in a very simplified form and use non-precise proportions. They are only used to conveniently and clearly assist in explaining the implementation methods of the utility model, and are not used to limit the conditions for the implementation of the utility model. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed by the utility model without affecting the efficacy and purpose that can be achieved by the utility model.

[0038] It should be noted that, in the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only the elements explicitly listed, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0039] As described in the background technology, the uniformity of the thin film formed by the existing epitaxial deposition equipment is poor. In order to solve this technical problem, the utility model arranges a first gas delivery pipeline in the input gas component, and arranges a second gas delivery pipeline and a third gas delivery pipeline in the lining, and the first gas delivery pipeline is connected to the second gas delivery pipeline and the third gas delivery pipeline, so that the uniformity of the formed thin film is better.

[0040] Figure 1 It is a structural schematic diagram of an epitaxial deposition device of the utility model.

[0041] Please refer to Figure 1 The epitaxial deposition device 1 includes a chamber body 110. In some embodiments, it can be a hollow pancake-shaped frame or a hollow rectangular parallelepiped frame. It can be integrally formed or assembled into multiple parts. An input gas component 170 and an output gas component 180 are arranged on opposite sides of the chamber body. The input gas component 170 is provided with an air inlet 111, and the output gas component 180 is provided with a gas output pipeline 112. The process gas is introduced into the air inlet 111 through an external gas source, and a vacuum pump (not shown in the figure) can be connected to the gas output pipeline 112 to extract the process gas. In some embodiments, the air inlet 111 and the gas output pipeline 112 are as shown in FIG. Figure 1 As shown, the substrate transfer port 190 is disposed on two opposite sides of the chamber body 110. In other embodiments, the substrate transfer port 190 may also be disposed at other locations. Figure 2 ), the substrate transfer port 190 is disposed on the side wall of the chamber body 110 where the gas inlet 111 and the gas output pipeline 112 are not disposed, and the substrate transfer port 190 is used to allow the substrate W to enter and exit the processing space 140. The chamber body 110 may be made of metal to provide sufficient mechanical strength.

[0042] An upper cover 120 and a lower cover 130 are provided on the upper and lower sides of the chamber body 110. In this embodiment, the upper and lower surfaces of the chamber body 110 are provided with openings corresponding to the sizes of the upper cover 120 and the lower cover 130. The shapes and sizes of the openings can be adjusted accordingly according to the different shapes of the upper cover 120 and the lower cover 130. After the upper cover 120, the lower cover 130 and the chamber body 110 are assembled together, a processing space 140 can be enclosed inside the chamber body 110. The substrate W to be processed can be placed on the substrate support 150 in the processing space 140. The substrate support 150 can rotate around the central axis OO during the process to reduce the difference in thermal field and flow field at different positions in the processing space 140, which helps to improve the uniformity of the thin film formed on the surface of the substrate W.

[0043] The lower surface of the upper cover 120 is located in the processing space, and the gas inlet 111 and the gas output pipe 112 are connected to the processing space 140 so that the process gas can flow in the processing space 140 (as shown by the arrow in the processing space 140). The upper cover 120 can transmit infrared thermal radiation. In some embodiments, the upper cover 120 is at least partially made of a transparent material, such as transparent quartz. In other embodiments, the lower cover 130 and the upper cover 120 are made of the same material. A device for emitting thermal radiation is arranged on the outer side of the upper cover so that the thermal radiation can be irradiated onto the substrate W in the processing space 140 to perform a chemical vapor deposition process. In other embodiments, a device for emitting thermal radiation is also arranged on the outer side of the lower cover 130. In other embodiments, the thermal radiation device on the outer side of the lower cover 130 may not be included, and the substrate W is irradiated by the infrared radiation transmitted by the upper cover 120 to produce a deposition reaction.

[0044] A liner 160 is also provided inside the chamber body 110, and the liner 160 is used to protect the inner wall of the chamber body 110. The liner 160 is provided with openings at positions corresponding to the gas inlet 111 and the gas output pipe 112 to allow gas to pass through. In order to better show the design details of the gas inlet 111 and the liner 160, the following is a detailed description:

[0045] Figure 2 It is a stereogram of a liner, an input gas component and an output gas component of the utility model; Figure 3 yes Figure 2 A top view of the middle liner, input gas assembly and output gas assembly.

[0046] Please refer to Figure 2 and Figure 3, the liner 160, along the diameter D direction, the liner 160 includes a first end A and a second end B; an input gas assembly 170, arranged at the first end A, wherein a first gas delivery pipeline 200 is arranged, and the first gas delivery pipeline 200 is connected to an auxiliary gas source (not shown in the figure); an output gas assembly 180, arranged at the second end B, wherein a gas output pipeline (not shown in the figure) is arranged, and the gas output pipeline is connected to the processing space 140 (see Figure 1 ) is connected; the liner 160 is provided with a second gas delivery channel and a third gas delivery pipeline 202 that are interconnected, the second gas delivery channel is connected to the first gas delivery pipeline 200, and the third gas delivery pipeline 202 is connected to the processing space 140 (see Figure 1 ) is connected to deliver auxiliary gas into the processing space 140.

[0047] In this embodiment, a first process gas channel 204 is further provided in the input gas assembly 170, and correspondingly, a second process gas channel (not shown in the figure) is further provided in the liner 160, and the second process gas channel is connected to the first process gas channel 204, and is used to deliver process gas to the processing space 140. In one embodiment, the first gas delivery pipeline 200 is arranged below the first process gas channel 204 to minimize the changes to the original design of the existing epitaxial deposition equipment, so as to better adapt to the external gas source. In another embodiment, the positions of the first gas delivery pipeline and the first process gas channel are not limited.

[0048] Furthermore, the distance from the first gas delivery pipeline 200 to the gas output pipeline (arranged in the output gas component 180 ) is smaller than the distance from the first process gas channel 204 to the gas output pipeline, which helps to reduce the design difficulty of the first gas delivery pipeline 200 .

[0049] It should be noted that: Figure 1 The gas inlet 111 includes the first process gas channel 204 and the first gas delivery pipeline 200 .

[0050] The width of the first process gas channel 204 is greater than or equal to the diameter of the substrate W, so that the process gas flows through the surface of the substrate W, which is conducive to forming a thin film on the entire surface of the substrate W. However, it is difficult for the temperature of the central area of ​​the substrate W to be completely consistent with the temperature of the edge area. In order to improve the uniformity of the thickness of the thin film formed on the surface of the edge area and the central area of ​​the substrate W, the following design is performed:

[0051] In this embodiment, the liner 160 includes: a middle liner 160a and an upper liner (not shown) located above the middle liner 160a, and the input gas assembly 170 and the output gas assembly 180 are respectively connected to the middle liner 160a. The liner 160 also includes: an insert 160b disposed between the middle liner 160a and the upper liner, and the upper liner is provided with a first groove sunken in the bottom surface thereof, and the first groove is used to accommodate the insert 160b. The second gas delivery pipeline includes: an arcuate channel 201 and a longitudinal channel 203 that are interconnected. The arcuate channel 201 is arranged along the circumference of the middle liner 160a. The two ends of the arcuate channel 201 are respectively connected to the first gas delivery pipeline 200 and the longitudinal channel 203. The other end of the longitudinal channel 203 is connected to the third gas delivery pipeline 202. The arcuate channel 201 is arranged in the middle liner 160a, and the longitudinal channel 203 and the third gas delivery pipeline 202 are arranged in the plug 160b. Fig.10 It should be noted that the "longitudinal" in the longitudinal channel 203 does not necessarily have to be vertically arranged, and the center line of the longitudinal channel may have a certain angle with the vertical line. Similarly, the center line of the third gas delivery pipeline 202 does not necessarily have to be parallel to the horizontal line, and the center line of the third gas delivery pipeline 202 may have a certain angle with the horizontal line.

[0052] In another embodiment, the longitudinal channel includes a first longitudinal channel and a second longitudinal channel that are interconnected, wherein the first longitudinal channel and the arcuate channel are disposed in the middle liner, and the second longitudinal channel and the third gas delivery pipeline are disposed in the plug-in.

[0053] In yet another embodiment, the upper lining, the middle lining and the insert are integrally formed.

[0054] In this embodiment, the liner includes an adjustment area T extending from the edge of the input gas component 170 to the edge of the output gas component 180 along its circumference. Since the third gas delivery pipeline 202 extends into the adjustment area T, the auxiliary gas can be delivered to the area between the first end A and the second end B of the liner through the first gas delivery pipeline 200, the arc channel 201, the longitudinal channel 203 and the third gas delivery pipeline 202, so as to supplement the gas at the edge of the substrate W and adjust the film thickness at the edge of the substrate W. Specifically, when the film thickness at the edge area of ​​the substrate W is greater than the film thickness at the center area, the auxiliary gas can be a cleaning gas, which is used to partially reduce the film thickness at the edge area of ​​the substrate, thereby reducing the difference in thickness of the film formed at the edge area of ​​the substrate W and the center area. When the film thickness at the edge area of ​​the substrate W is less than the film thickness at the center area, the auxiliary gas is a process gas to increase the thickness of the film formed at the edge of the substrate W, thereby reducing the difference in thickness of the film formed at the edge area of ​​the substrate W and the center area. That is, the thickness uniformity of the thin film formed in the edge area and the central area of ​​the substrate is improved by compensation of the auxiliary gas.

[0055] In this embodiment, if Figure 3 As shown, the arc-shaped channel extends to the position of 90 degrees along the circumferential direction of the middle liner 160a. At this time, the angle between the center line of the third gas delivery pipeline and the diameter D is greater than or equal to 30 degrees and less than or equal to 90 degrees. In fact, the extension position of the arc-shaped channel is not limited, for example, the arc-shaped channel can extend to a position of 15 degrees, or a position of 30 degrees.

[0056] In this embodiment, although the number of the plug-in 160b is 1, the number of the arc-shaped channel 201, the longitudinal channel 203 and the third gas delivery pipeline 202 are also 1, however, due to the substrate support 150 (see Figure 1 ) can rotate along its central axis, so the auxiliary gas can be delivered to all edge areas of the substrate W, and can compensate for the gas in the entire edge area of ​​the substrate W, which is beneficial to improving the uniformity of the film thickness formed in the edge area and the central area of ​​the substrate W.

[0057] Furthermore, the substrate transfer port 190 (see Figure 2) and the adjustment area T are respectively located on both sides of the diameter D, and the rotation direction of the base support is clockwise, so that the area of ​​the substrate W opposite to the third gas delivery pipeline 202 is transferred to the gas output pipeline (output gas component 180) earlier than the area opposite to the substrate transfer port 190, so that the auxiliary gas has a smaller influence on the edge area of ​​the substrate W, and only affects the area between the plug 160b and the output gas component 180, which is conducive to more accurately controlling the film thickness of the edge area of ​​the substrate W. If the first gas delivery pipeline 200, the arc channel 201 and the plug 160b are also placed on the side of the substrate transfer port 190, it is not conducive to the substrate entering and exiting the processing space.

[0058] You can also Figure 4 As shown, the number of the arc-shaped channel 301 is 1, the number of the plug-ins is plural, and each plug-in is provided with a longitudinal channel 303 and a third gas delivery pipeline (not shown in the figure), that is, the number of the longitudinal channel 303 and the third gas delivery pipeline are both plural, so that the auxiliary gas from the first gas delivery pipeline (the flow direction of the auxiliary gas is as shown in FIG. Figure 4 The gas is then transferred along the arc channel 301 into different longitudinal channels 303, and then input into the processing space 140 through different third gas delivery pipelines to adjust different areas of the substrate W, which is beneficial to quickly adjust the uniformity of the film thickness in the edge area of ​​the substrate W.

[0059] You can also Figure 5 As shown, there are multiple arc channels 401, and the multiple arc channels 401 are arranged up and down along the height H direction of the middle liner, and there are multiple longitudinal channels 403, and the number of the arc channels 401 is equal to the number of longitudinal channels 403, so that the auxiliary gas from the first gas delivery pipeline is transmitted to the edge area of ​​the substrate W through different arc channels 401, longitudinal channels 403 and the third gas delivery pipeline (not shown in the figure), which is conducive to quickly adjusting the uniformity of the film thickness in the edge area of ​​the substrate W.

[0060] Figure 6 This is a schematic structural diagram of another lining of the utility model.

[0061] Please refer to Figure 6The liner includes: a middle liner 160 and an upper liner located above the middle liner 160 (not shown in the figure), at least two partitions 505 are provided between the middle liner 160 and the upper liner, at least two partitions 505 are arranged opposite to each other to form a third groove 502, the third groove 502 and the upper liner form a third gas delivery pipeline, the middle liner 160 is also provided with a second groove 501 recessed in its upper surface, the second groove 501 and the lower surface of the upper liner form the second gas delivery pipeline.

[0062] Figure 7 for Figure 6 Top view of the liner, input gas assembly 170, and output gas assembly 180.

[0063] Please refer to Figure 7 The auxiliary gas enters the second gas delivery pipeline formed by the second groove 501 and the upper lining through the first gas delivery pipeline 500 in the input gas assembly 170, and then enters the third gas delivery pipeline formed by the third groove 502 and the upper lining, and is input into the processing space 140 through the third gas delivery pipeline to adjust the film thickness in the edge area of ​​the substrate W, which is beneficial to improve the uniformity of the film thickness in the edge area and the central area of ​​the substrate W.

[0064] exist Figure 6 and Figure 7 In the embodiment, the number of the second grooves 501 is two, and the second grooves 501 and the upper inner liner form a second gas delivery pipeline, so the number of the second gas delivery pipeline is two, and the number of the partitions 505 is three, and the three partitions 505 are arranged oppositely to form two third grooves 502, and the third grooves 502 and the upper inner liner form a third gas delivery pipeline, so the number of the third gas delivery pipeline is two. A first gas delivery pipeline, a second gas delivery pipeline, and a third gas delivery pipeline constitute an auxiliary gas passage. The two auxiliary gas passages in this embodiment are independent of each other and independently adjustable. The ratio of the two can be adjusted as needed to better adjust the thickness of the edge area of ​​the substrate W, thereby improving the uniformity of the film thickness of the edge area and the central area of ​​the substrate.

[0065] In fact, the number of the second grooves 501 and the baffles 505 is not limited and can be more. The plurality of second grooves are distributed along the circumference of the middle liner, and the number of the second grooves is equal to the number of the third gas channels, and one second gas delivery pipeline is connected to one third gas delivery pipeline. In addition, the number of the second grooves can also be 1, and the number of baffles can be two, so that the number of the third groove is also 1, and accordingly, the number of the second gas delivery pipeline is 1, and the number of the third gas delivery pipeline is 1.

[0066] Please refer to Figure 8 and Fig. 9 , a straight line connecting the input gas assembly 170 and the output gas assembly 180 and passing through the center of the liner 160 is defined as the center line O1 - O1 of the liner 160 .

[0067] and Figure 8 The first gas delivery pipeline, the second gas delivery pipeline and the third gas delivery pipeline are shown in FIG. Figure 5 The structure of the embodiment is the same, the second gas delivery pipeline includes an arc channel and a longitudinal channel interconnected, the arc channel is arranged along the circumference of the middle liner, and the liner also includes: a plug-in arranged on the middle liner, and the longitudinal channel and the third gas delivery pipeline (not shown in the figure) are arranged in the plug-in. Figure 8 and Figure 5 The differences between the embodiments include: Figure 5 In the embodiment, the plurality of second gas delivery pipelines are located on the same side of the center line O1-O1, and Figure 8 In the embodiment, the number of the first gas delivery pipelines 600 is two, the number of the second gas delivery pipelines 601 is two, and the two first gas delivery pipelines 600 are respectively located on both sides of the center line O1-O1, and the two second gas delivery pipelines 601 are respectively located on both sides of the center line O1-O1, and the first gas delivery pipeline 600, the second gas delivery pipeline 601 and the third gas delivery pipeline on both sides of the center line O1-O1 of the liner 160 simultaneously adjust the edge area of ​​the substrate W, which is beneficial to quickly adjust the film thickness of the edge area of ​​the substrate, and is beneficial to reducing the difference in film thickness between the edge area and the center area of ​​the substrate.

[0068] Fig. 9 The second gas delivery pipeline and the third gas delivery pipeline in the embodiment are Figure 6 The same as the embodiment, the middle liner is provided with a second groove 701 sunken in its upper surface, and the second groove 701 and the upper liner constitute the second gas delivery pipeline; the liner also includes: at least two partitions 703 arranged between the middle liner and the upper liner, the two partitions 703 are arranged opposite to each other, and the two partitions 703 and the upper surface of the middle liner form a third groove 702, and the third groove 702 and the upper liner surround the third gas delivery pipeline.

[0069] Fig. 9 Example and Figure 6 The differences between the embodiments include: Figure 6 In the embodiment, the plurality of second gas delivery pipelines are located on the same side of the center line O1-O1, and Fig. 9In the embodiment, the number of the first gas delivery pipelines 700 is three, and the number of the second grooves 701 is three, wherein two second grooves 701, two third grooves 702, and three partitions 703 are located on the lower side of the center line O1-O1, and a first gas delivery pipeline, a second gas delivery pipeline, and a third gas delivery pipeline constitute an auxiliary gas passage. Two auxiliary gas passages are arranged on the lower side of the center line O1-O1, and another second groove 701, a third groove 702, and two partitions 703 are located on the upper side of the center line O1-O1, that is, an auxiliary gas passage is arranged on the upper side of the center line O1-O1, and these auxiliary gas passages simultaneously adjust the film thickness of the edge area of ​​the substrate W, which is beneficial to improve the uniformity of the thickness between the edge area and the center area of ​​the substrate.

[0070] exist Fig. 9 In the embodiment, the angle α between the center line L of the third gas delivery pipeline and the center line O1-O1 of the liner ranges from 0 degrees to 45 degrees. Under the suction of the pump at the gas output pipeline and the blocking effect of the process gas in the first process gas channel, it is beneficial to deliver the auxiliary gas to the edge area of ​​the substrate and reduce the impact on the central area of ​​the substrate, thereby improving the uniformity of the film thickness formed in the edge area and the central area of ​​the substrate.

[0071] In summary, although there is a temperature difference between the central area and the edge area of ​​the substrate, the first gas delivery pipeline in the input gas assembly is connected to the second gas delivery pipeline and the third gas delivery pipeline in the lining to deliver auxiliary gas to the edge area of ​​the substrate to compensate for the edge area of ​​the substrate, thereby improving the thickness uniformity of the film formed in the edge area and the central area of ​​the substrate.

[0072] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. An epitaxial deposition device, characterized in that: include: a chamber body, wherein the processing space is provided; A substrate support member, disposed in the chamber body and used to support a substrate; A liner is disposed in the chamber body and surrounds the periphery of the substrate support, wherein the liner includes a first end and a second end along a diameter direction thereof; An input gas assembly is provided at the first end and is provided with a first gas delivery pipeline therein, wherein the first gas delivery pipeline is connected to an auxiliary gas source; an output gas component, disposed at the second end, wherein a gas output pipeline is disposed therein, and the gas output pipeline is communicated with the processing space; The liner is provided with a second gas delivery pipeline and a third gas delivery pipeline which are interconnected. The second gas delivery pipeline is connected to the first gas delivery pipeline. The liner includes an adjustment area along its circumference which extends from the edge of the input gas component to the edge of the output gas component. The third gas delivery pipeline extends to the adjustment area. The third gas delivery pipeline is connected to the processing space and is used to deliver auxiliary gas to the processing space.

2. The epitaxial deposition apparatus according to claim 1, characterized in that: The liner includes: a middle liner and an upper liner located above the middle liner, and the input gas assembly and the output gas assembly are respectively connected to the middle liner.

3. The epitaxial deposition apparatus according to claim 2, characterized in that: The second gas delivery pipeline includes an arc channel and a longitudinal channel that are interconnected. The arc channel is arranged along the circumference of the middle liner. The two ends of the arc channel are respectively connected to the first gas delivery pipeline and the longitudinal channel, and the other end of the longitudinal channel is connected to the third gas delivery pipeline. The arc channel is arranged in the middle liner.

4. The epitaxial deposition apparatus according to claim 3, characterized in that: The liner also includes: an insert arranged between the middle liner and the upper liner, the upper liner is provided with a first groove recessed in its bottom surface, the first groove is used to accommodate the insert, and at least part of the longitudinal channel and the third gas delivery pipeline are arranged in the insert.

5. The epitaxial deposition apparatus according to claim 4, characterized in that: The number of the arc-shaped channels is one, the number of the plug-ins is multiple, the multiple plug-ins are distributed along the circumference of the arc-shaped channel, and the longitudinal channel in each plug-in is connected to the arc-shaped channel.

6. The epitaxial deposition apparatus according to claim 4, characterized in that: There are multiple arc-shaped channels, and the multiple arc-shaped channels are arranged up and down along the height direction of the middle liner, and each of the arc-shaped channels is connected to a longitudinal channel in the plug-in.

7. The epitaxial deposition apparatus according to claim 2, characterized in that: The middle liner is provided with a second groove sunken in its upper surface, and the second groove and the upper liner constitute the second gas delivery pipeline; the liner also includes: at least two partitions arranged between the middle liner and the upper liner, the at least two partitions are arranged opposite to each other, and the partitions, the middle liner and the upper liner surround the third gas delivery pipeline.

8. The epitaxial deposition apparatus according to claim 7, characterized in that: There are multiple second grooves, and the multiple second grooves are distributed along the circumference of the middle liner. The number of the second grooves is equal to the number of the third gas channels, and one second gas delivery pipeline is connected to one third gas delivery pipeline.

9. The epitaxial deposition apparatus according to claim 4 or 7, characterized in that: A first process gas channel is also provided in the input gas assembly, and a second process gas channel is also provided in the lining. The second process gas channel is connected to the first process gas channel and is used to transport process gas to the processing space. The first gas delivery pipeline is arranged below the first process gas channel.

10. The epitaxial deposition apparatus according to claim 9, characterized in that: The distance from the first gas delivery pipeline to the gas output pipeline is smaller than the distance from the first process gas channel to the gas output pipeline.

11. The epitaxial deposition apparatus according to claim 4 or 7, characterized in that: A straight line connecting the input gas assembly and the output gas assembly and passing through the center of the liner is defined as the center line of the liner, and there are multiple second gas delivery pipelines, multiple second gas delivery pipelines are located on the same side of the center line, or multiple second gas delivery pipelines are located on different sides of the center line.

12. The epitaxial deposition apparatus according to claim 1, characterized in that: Also includes: The driving device is used to drive the substrate supporting member to rotate along its central axis.

13. The epitaxial deposition apparatus according to claim 12, characterized in that: The substrate support member rotates in a clockwise direction.

14. The epitaxial deposition apparatus according to claim 2, characterized in that: Also includes: An upper cover is arranged above the upper lining; the lining also includes a lower lining, and the lower lining is arranged below the middle lining; The lower cover is arranged below the lower liner, and the liner, the upper cover and the lower cover enclose the processing space.

15. The epitaxial deposition apparatus according to claim 1, characterized in that: The third gas delivery pipeline is arranged toward the gas output pipeline.

16. The epitaxial deposition apparatus according to claim 15, characterized in that: There are multiple third gas delivery pipelines, and the included angles between the center lines of different third gas delivery pipelines and the center line of the liner are different.

17. The epitaxial deposition apparatus according to claim 11, characterized in that: Also includes: A substrate transfer port, the substrate transfer port being used to transfer substrates into and out of the processing space; The substrate transfer port and the adjustment area are located on both sides of the center line.

18. The epitaxial deposition apparatus according to claim 1, characterized in that: When the film thickness in the edge region of the substrate is greater than that in the central region, the auxiliary gas source is a cleaning gas, and the cleaning gas is used to remove the film in the edge region of the substrate.

19. The epitaxial deposition apparatus according to claim 1, characterized in that: When the film thickness in the edge region of the substrate is smaller than that in the central region, the auxiliary gas source is a process gas, and the process gas is used to deposit a film in the edge region of the substrate.

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