Degassing chamber of semiconductor equipment and semiconductor equipment

Abstract

The utility model provides a degassing chamber of semiconductor equipment and the semiconductor equipment, relates to the technical field of semiconductor manufacturing, and is designed for solving the problem that pollutants in the degassing chamber provided by the related technology are difficult to clean completely. The degassing cavity comprises a cavity body, and a medium window, a heating assembly and a protection part which are arranged in the cavity body, wherein the dielectric window divides the space in the cavity into a first cavity and a second cavity which are arranged up and down, and the heating assembly is arranged in the first cavity and used for heating a wafer placed in the second cavity; the protection part is arranged in the second cavity and detachably connected with the cavity. According to the utility model, the protection part is replaced, so that the purpose of replacing the protection part along with the maintenance period of the degassing chamber is achieved, the protection part does not need to be wiped and cleaned, and the problem that pollutants cannot be thoroughly cleaned due to a poor wiping effect is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a degassing chamber of a semiconductor device and the semiconductor device. Background Art

[0002] In PVD (Physical Vapor Deposition) process equipment, in order to improve the adhesion of the deposited film layer, a wafer cleaning process is usually performed in a degassing chamber before the thin film deposition process step. A heating device is provided inside the degassing chamber, and the heating temperature is generally between 150°C and 180°C, which can fully release the PI (Polyimide) glue on the surface of the wafer and exhaust it from the chamber through a molecular pump. At the same time, it can also remove water vapor or other impurities absorbed by the wafer due to the previous wet cleaning and the atmospheric environment, so as to ensure that the wafer surface is clean and has a certain temperature, so as to carry out the subsequent process flow.

[0003] However, the increase in temperature will cause the PI glue on the surface of the wafer to release more impurities that adhere to the inner surface of the chamber. If not handled in time, it will cause a pollution source to form inside the degassing chamber, causing an increase in wafer particles and device performance failure. The degassing chamber provided by the related art generally uses a wiping method to remove impurities adhering to the inner surface of the chamber. However, due to the rough material of the bottom of the chamber, it is difficult to clean it completely. Utility Model Content

[0004] The first object of the utility model is to provide a degassing chamber for semiconductor equipment to solve the technical problem that pollutants inside the degassing chamber provided by the related art are difficult to be completely cleaned.

[0005] The degassing chamber provided by the utility model comprises a cavity and a medium window, a heating component and a protective component arranged in the cavity; wherein,

[0006] The dielectric window divides the space in the cavity into a first cavity and a second cavity arranged up and down. The heating component is arranged in the first cavity for heating the wafer placed in the second cavity. The protective component is arranged in the second cavity and is detachably connected to the cavity.

[0007] Furthermore, the cavity includes an upper cavity and a lower cavity, the dielectric window and the upper cavity together form the first cavity, the dielectric window and the lower cavity together form the second cavity, and the protective component is lined on the inner wall of the lower cavity; the protective component is provided with a plurality of avoidance holes.

[0008] Furthermore, the plurality of avoidance holes include at least one first avoidance hole and at least one second avoidance hole, wherein the first avoidance hole is used to avoid a supporting element that supports the wafer; and the second avoidance hole is arranged in cooperation with a structural hole of the lower cavity.

[0009] Furthermore, the material of the protective component is metal.

[0010] Furthermore, the roughness of the surface of the protective component facing away from the lower cavity is less than 1.6 μm.

[0011] Furthermore, the thickness of the protective component is a, wherein 3mm≤a≤5mm.

[0012] Furthermore, the degassing chamber further comprises at least one vacuum screw, and the vacuum screw passes through the bottom wall of the protective component and is screwed on the bottom wall of the lower cavity.

[0013] Furthermore, the first cavity is also provided with a reflection screen, the reflection screen is fixedly connected to the upper cavity body, and the reflection screen is used to reflect the energy generated by the heating component to the dielectric window.

[0014] Furthermore, the heating assembly includes multiple heating components, the degassing chamber also includes multiple bases, the upper cavity is provided with multiple mounting holes, the multiple bases are fixedly arranged in the multiple mounting holes one by one, and the multiple heating components are fixedly arranged in the multiple bases one by one.

[0015] Furthermore, the base is in a "T" shape, including a horizontal section and a vertical section, wherein the horizontal section is located outside the first cavity, the vertical section is inserted into the mounting hole, and the heating component is fixedly connected to the vertical section.

[0016] Furthermore, the degassing chamber further comprises a protective cover, which is fixedly connected to the cavity body, and a protective cavity is constructed at the upper part of the cavity body, and the horizontal section is located in the protective cavity.

[0017] The beneficial effects of the degassing chamber of the utility model are:

[0018] When the degassing chamber is maintained, the protective component can be removed from the chamber body to separate the protective component from the chamber body so as to replace the new protective component. After the replacement of the new protective component is completed, the normal process flow can be continued.

[0019] The degassing chamber is provided with a protective component detachably connected to the cavity body in the second cavity, so that the protective component can be replaced after a period of use, thereby achieving the purpose of replacing the protective component with the maintenance cycle of the degassing chamber, and there is no need to wipe and clean it, thereby avoiding the problem of contaminants not being able to be thoroughly cleaned due to poor wiping effect. This arrangement can effectively solve the problem of PI glue contaminants adhering to the cavity due to heating of the chip in the degassing chamber, affecting the chamber environment and thus causing an increase in chip particles.

[0020] The second object of the present invention is to provide a semiconductor device to solve the technical problem that the pollutants inside the degassing chamber provided by the related art are difficult to be completely cleaned.

[0021] The semiconductor equipment provided by the utility model comprises the above-mentioned degassing chamber.

[0022] The beneficial effects brought by the semiconductor device of the utility model are:

[0023] By providing the above-mentioned degassing chamber in the semiconductor device, the semiconductor device accordingly has all the advantages of the above-mentioned degassing chamber, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the utility model or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0025] Figure 1 A longitudinal cross-sectional schematic diagram of a degassing chamber provided in an embodiment of the utility model;

[0026] Figure 2 A schematic longitudinal cross-sectional view of a local structure of a degassing chamber provided in an embodiment of the utility model;

[0027] Figure 3 A schematic diagram of the structure of the protective component of the lower cavity of the degassing chamber provided in an embodiment of the utility model.

[0028] Description of reference numerals:

[0029] 010-second cavity; 020-first cavity; 030-protection cavity; 040-wafer;

[0030] 300- load-bearing element;

[0031] 110-heating assembly; 111-heating component; 112-base; 1121-horizontal section; 1122-vertical section; 120-medium window; 130-upper cavity; 131-mounting hole; 132-cooling water channel; 140-reflection screen; 150-protective cover; 160-fixing card; 170-sealing ring; 180-connecting screw;

[0032] 210-lower cavity; 211-molecular pump exhaust port; 220-protective component; 230-vacuum screw;

[0033] 221-connection hole; 222-nitrogen pipeline avoidance hole; 223-dry pump exhaust pipeline avoidance hole; 224-vacuum hand transmission avoidance hole; 225-first avoidance hole; 226-molecular pump exhaust port avoidance hole; 227-ion gauge connection avoidance hole; 228-vacuum hand valve avoidance hole. DETAILED DESCRIPTION

[0034] In the back metallization process, in order to reduce the problem of damage caused by conventional argon ion bombardment on the wafer, which leads to increased device leakage current, a hydrogen ion reactive etching process is usually used. This process requires the wafer to be preheated to a high temperature in advance to increase the hydrogen ion reaction activity to ensure etching efficiency. At the same time, it also prevents the wafer from rising to a higher temperature in the subsequent cleaning chamber, which causes the PI glue to release more impurities and affect the etching performance. Therefore, the wafer needs to be heated to between 200℃ and 250℃ in the degassing chamber.

[0035] However, the increase in temperature will cause the PI glue on the surface of the chip to release more impurities and adhere to the inner wall of the chamber. If not handled in time, it will cause a pollution source to form inside the degassing chamber, causing an increase in chip particles and device performance failure. At present, the degassing chamber generally removes impurities adhering to the inner surface of the chamber by dissolving the contaminants with anhydrous ethanol, IPA (Isopropylamine) or acetone and then wiping them off. However, due to the rough material of the bottom of the chamber, it is difficult to completely clean the above impurities.

[0036] Therefore, the purpose of the present invention is to provide a degassing chamber for semiconductor equipment and semiconductor equipment to solve the technical problem that pollutants inside the chamber structure are difficult to completely clean.

[0037] In order to make the above-mentioned purposes, features and advantages of the utility model more obvious and easy to understand, the specific embodiments of the utility model are described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.

[0038] Figure 1 A longitudinal cross-sectional schematic diagram of the degassing chamber provided in this embodiment, Figure 2The longitudinal cross-sectional diagram of the local structure of the degassing chamber provided in this embodiment. Figure 1 and Figure 2 As shown, this embodiment provides a degassing chamber, including a cavity and a dielectric window 120, a heating component 110 and a protective component 220 arranged in the cavity, wherein the dielectric window 120 divides the space in the cavity into a first cavity 020 and a second cavity 010 arranged up and down, the heating component 110 is arranged in the first cavity 020, and is used to heat the wafer placed in the second cavity 010; the protective component 220 is arranged in the second cavity 010, and is detachably connected to the cavity.

[0039] When the degassing chamber is maintained, the protective component 220 can be removed from the chamber body to separate the protective component 220 from the chamber body so as to replace a new protective component 220. After the replacement of the new protective component 220 is completed, the normal process flow can be continued.

[0040] The degassing chamber is provided with a protective component 220 detachably connected to the cavity body in the second cavity 010, so that the protective component 220 can be replaced after a period of use, thereby achieving the purpose of replacing the protective component 220 with the maintenance cycle of the degassing chamber, and there is no need to wipe and clean it, thereby avoiding the problem of contaminants not being able to be thoroughly cleaned due to poor wiping effect. This setting can effectively solve the problem of PI glue contaminants adhering to the cavity due to heating of the chip 040 in the degassing chamber, affecting the chamber environment and thus causing an increase in particles in the chip 040.

[0041] Please continue to refer to Figure 1 In this embodiment, the cavity may include an upper cavity 130 and a lower cavity 210. Specifically, the dielectric window 120 and the upper cavity 130 together form a first cavity 020, and the dielectric window 120 and the lower cavity 210 together form a second cavity 010. The protective component 220 is lined on the inner wall of the lower cavity 210; the protective component 220 is provided with a plurality of avoidance holes, and the plurality of avoidance holes are arranged in coordination with the structural holes of the lower cavity 210.

[0042] By setting the cavity to be such an upper and lower structure mainly composed of the upper cavity 130 and the lower cavity 210, it is convenient for the wafer to be processed in the second cavity 010. At the same time, by opening a plurality of avoidance holes in the protective component 220, it is possible to avoid the structural holes of the lower cavity 210, so that after the protective component 220 is assembled in the cavity, the plurality of avoidance holes opened in the protective component 220 can be opposite to the structural holes set in the lower cavity 210, thereby ensuring the smooth progress of the process.

[0043] In this embodiment, the upper cavity 130 and the lower cavity 210 are detachable.

[0044] Please continue to refer to Figure 1 and Figure 2In this embodiment, the lower cavity 210 includes a bottom wall and a side wall, and the lower cavity 210 and the protective component 220 also have such a structure including a bottom wall and a side wall.

[0045] In this embodiment, the roughness of the surface of the protection component 220 facing away from the lower cavity 210 is less than 1.6 μm. In other words, the roughness of the inner surface of the protection component 220 is less than 1.6 μm.

[0046] By setting the roughness of the inner surface of the protection component 220 to be less than 1.6 μm, the smoothness of the inner surface of the protection component 220 can be ensured, and the roughness of the inner surface of the protection component 220 can be reduced, thereby reducing pollutants adhering to the protection component 220.

[0047] In this embodiment, the material of the protective component 220 is metal. The protective component 220 of this material has good structural strength and is not easy to deform.

[0048] In this embodiment, the material of the protection component 220 is stainless steel.

[0049] By making the protective component 220 of stainless steel, the heat resistance and corrosion resistance of the protective component 220 can be improved.

[0050] In this embodiment, the material of the protection component 220 is 304 stainless steel, and the protection component 220 is polished into a mirror surface, thereby obtaining an inner surface with a roughness less than 1.6 μm.

[0051] In this embodiment, the thickness of the protective component 220 is a, where 3mm≤a≤5mm.

[0052] By limiting the thickness of the protective component 220 within the above range, on the one hand, the problem of poor structural strength of the protective component 220 due to the protective component 220 being too thin, which is easy to cause deformation, can be avoided. On the other hand, the problem of material waste and increased cost due to the protective component 220 being too thick can also be avoided.

[0053] Please continue to refer to Figure 2 In this embodiment, the lower cavity 210 may further include at least one vacuum screw 230 . Specifically, the vacuum screw 230 passes through the bottom wall of the protective component 220 and is screwed on the bottom wall of the lower cavity 210 .

[0054] This form of connecting the protective component 220 and the lower cavity 210 with the vacuum screw 230 can not only realize the reliable connection between the protective component 220 and the lower cavity 210, and prevent the protective component 220 from shifting during the process, but also, when the second cavity 010 is evacuated, the air between the vacuum screw 230 and the lower cavity 210 can also be evacuated, so as to prevent the air from being "locked" between the vacuum screw 230 and the lower cavity 210 and unable to be evacuated, but slowly leaking from the gap of the thread groove to the second cavity 010 and causing pollution. In addition, by passing the vacuum screw 230 through the bottom wall of the protective component 220 and connecting it to the bottom wall of the lower cavity 210, it is also convenient for the staff to apply force to the vacuum screw 230, thereby improving the convenience of maintenance of the degassing chamber.

[0055] Please continue to refer to Figure 2 In this embodiment, there are two vacuum screws 230. This arrangement can not only increase the connection reliability between the protective component 220 and the lower cavity 210, and avoid the displacement of the protective component 220 due to a connection failure, but also limit the rotational freedom of the protective component 220 around the vertical axis, and prevent the avoidance hole from being misaligned due to the deflection of the protective component 220, thereby failing to effectively avoid the process hole.

[0056] It is understandable that the vacuum screws 230 may also be in other quantities, such as three, four, etc.

[0057] Figure 3 The schematic diagram of the structure of the protective component 220 of the lower chamber 210 of the degassing chamber provided in this embodiment. Figure 3 As shown, in this embodiment, the bottom wall of the protective component 220 is provided with two connection holes 221 for two vacuum screws 230 to pass through so as to be screwed on the bottom wall of the lower cavity 210 , thereby achieving the purpose of connecting the protective component 220 with the lower cavity 210 .

[0058] In this embodiment, the plurality of avoidance holes include at least one first avoidance hole 225 and at least one second avoidance hole, wherein the first avoidance hole 225 is used to avoid the supporting element 300 supporting the wafer, and the second avoidance hole is arranged in cooperation with the structural hole of the lower cavity 210 .

[0059] Specific as Figure 3 As shown, there are three first avoidance holes 225, and the three first avoidance holes 225 are respectively arranged in one-to-one correspondence with the three supporting elements 300, so as to realize avoidance of the three supporting elements 300, so as to ensure the bearing of the wafer by the three supporting elements 300. There are multiple second avoidance holes, which are molecular pump exhaust port avoidance hole 226, nitrogen pipeline avoidance hole 222, dry pump exhaust pipeline avoidance hole 223, vacuum hand transmission avoidance hole 224, ion gauge connection avoidance hole 227 and vacuum hand valve avoidance hole 228.

[0060] Please continue to refer to Figure 3 Specifically, the molecular pump exhaust port avoidance hole 226 is arranged on the bottom wall of the protective component 220, opposite to the molecular pump exhaust port 211 opened in the lower cavity 210; the nitrogen pipeline avoidance hole 222, the dry pump exhaust pipeline avoidance hole 223, the vacuum hand transmission avoidance hole 224, the ion gauge connection avoidance hole 227 and the vacuum hand valve avoidance hole 228 are arranged on the side wall of the protective component 220, opposite to the structural hole opened in the side wall of the lower cavity 210, wherein the nitrogen pipeline avoidance hole 222 is used to realize the avoidance of the nitrogen pipeline. To realize ventilation of nitrogen pipeline; the dry pump exhaust pipeline avoidance hole 223 is used to realize the avoidance of the dry pump exhaust pipeline to realize dry pump pipeline exhaust; the vacuum hand transmission avoidance hole 224 is used to realize the avoidance of the vacuum hand transmission path to realize vacuum hand transmission; the ion gauge connection avoidance hole 227 is used to realize the avoidance of the ion gauge connection pipeline so that the chamber pressure can be measured by the ion gauge; the vacuum hand valve avoidance hole 228 is used to realize the avoidance of the vacuum hand valve connection pipeline so that the vacuum hand valve can be used to realize the airtightness detection of the chamber.

[0061] Please continue to refer to Figure 1 In this embodiment, the dielectric window 120 is sealed and connected to the lower cavity 210, and the dielectric window 120 is a quartz cover plate. Specifically, a sealing ring 170 is provided between the dielectric window 120 and the lower cavity 210 to ensure the sealing between the dielectric window 120 and the lower cavity 210. The sealing ring 170 is made of a high temperature resistant material.

[0062] In this embodiment, the heating temperature of the degassing chamber is between 200°C and 500°C, such as 235°C.

[0063] In this embodiment, the heating assembly 110 includes a plurality of heating components 111 . The heating components 111 are optical heating components. The optical energy generated by the heating components 111 can be radiated to the second cavity 010 through the dielectric window 120 .

[0064] Please continue to refer to Figure 1 In this embodiment, the upper cavity 130 and the lower cavity 210 can be detachably fixedly connected together by the fixing card 160. Specifically, one end of the fixing card 160 can be rotatably connected to the lower cavity 210, and a buckle is provided on the upper cavity 130, and the fixing card 160 and the buckle are engaged with each other to achieve the purpose of detachably fixing the upper cavity 130 and the lower cavity 210.

[0065] Please continue to refer to Figure 2 In this embodiment, the first cavity 020 is further provided with a reflection screen 140 . Specifically, the reflection screen 140 is fixedly connected to the upper cavity 130 . The reflection screen 140 is used to reflect the energy generated by the heating component 110 to the dielectric window 120 .

[0066] The setting of the reflection screen 140 enables the energy generated by the heating component 111 to be reflected to the dielectric window 120 to transfer as much heat as possible to the wafer 040 in the second chamber 010. This setting improves energy utilization and reduces energy waste.

[0067] Please continue to refer to Figure 1 In this embodiment, the reflective screen 140 is connected to the upper cavity 130 by a plurality of connecting screws 180. This arrangement can not only ensure the installation reliability of the reflective screen 140, but also facilitate the disassembly and maintenance of the reflective screen 140.

[0068] In this embodiment, the reflection screen 140 may be made of metal with a smooth surface.

[0069] Please continue to refer to Figure 2 In this embodiment, a cooling water path 132 may be provided in the upper cavity 130 , and the first cavity 020 may be cooled by the flow of coolant in the cooling water path 132 , so as to prevent high temperature from causing high temperature damage to components or personnel on the side wall of the first cavity 020 .

[0070] Please continue to refer to Figure 1 In this embodiment, the degassing chamber may further include a plurality of bases 112. Specifically, the upper cavity 130 is provided with a plurality of mounting holes 131, and the plurality of bases 112 are fixedly disposed in the plurality of mounting holes 131 one by one, and the plurality of heating components 111 are fixedly disposed in the plurality of bases 112 one by one.

[0071] The arrangement of the base 112 provides an installation foundation for the heating component 111 , thereby ensuring the installation reliability of the heating component 111 in the upper cavity 130 .

[0072] Please continue to refer to Figure 1 In this embodiment, the base 112 is in a "T" shape, including a horizontal section 1121 and a vertical section 1122. Specifically, the horizontal section 1121 is located outside the first cavity 020, the vertical section 1122 is inserted into the mounting hole 131, and the heating component 111 is fixedly connected to the vertical section 1122.

[0073] After the base 112 is installed in the mounting hole 131 , the horizontal section 1121 of the base 112 forms a limit to prevent the base 112 from falling off the mounting hole 131 , thereby ensuring the installation reliability of the base 112 and thus ensuring the installation reliability of the heating component 111 .

[0074] In this embodiment, the heating component 111 can be fixedly connected to the vertical section 1122 of the base 112 by means of threaded connection, clamping, etc.

[0075] Please continue to refer to Figure 1In this embodiment, the degassing chamber may further include a protective cover 150. Specifically, the protective cover 150 is fixedly connected to the cavity, and a protective cavity 030 is constructed at the upper part of the cavity, and the horizontal section 1121 is located in the protective cavity 030. In other words, the protective cover 150 covers the horizontal section 1121 of the base 112 therein.

[0076] The provision of the protective cover 150 can electrically isolate the base 112 from the external environment, reduce the adverse effects of the external environment on the base 112 , and play a certain protective role on the base 112 .

[0077] Specifically, in this embodiment, the protective cover 150 is fixedly connected to the upper cavity 130 of the cavity.

[0078] In addition, this embodiment also provides a semiconductor device, including the above-mentioned degassing chamber.

[0079] By providing the above-mentioned degassing chamber in the semiconductor device, the semiconductor device accordingly has all the advantages of the above-mentioned degassing chamber, which will not be described in detail here.

[0080] Although the utility model is disclosed as above, the utility model is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the utility model. Therefore, the protection scope of the utility model shall be subject to the scope defined by the claims.

[0081] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprises a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0082] In the above embodiments, the descriptions of directions such as “upper”, “lower”, “inner”, “outer”, and “side” are all based on the drawings.

[0083] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A degassing chamber for a semiconductor device, characterized in that: The invention comprises a cavity, a dielectric window (120), a heating component (110) and a protective component (220) arranged in the cavity; wherein the dielectric window (120) divides the space in the cavity into a first cavity (020) and a second cavity (010) arranged up and down; the heating component (110) is arranged in the first cavity (020) and is used to heat a wafer placed in the second cavity (010); and the protective component (220) is arranged in the second cavity (010) and is detachably connected to the cavity.

2. The degassing chamber according to claim 1, characterized in that The cavity comprises an upper cavity (130) and a lower cavity (210); the dielectric window (120) and the upper cavity (130) together form the first cavity (020); the dielectric window (120) and the lower cavity (210) together form the second cavity (010); the protective component (220) is lined on the inner wall of the lower cavity (210); and the protective component (220) is provided with a plurality of avoidance holes.

3. The degassing chamber according to claim 2, characterized in that The plurality of avoidance holes include at least one first avoidance hole (225) and at least one second avoidance hole, wherein the first avoidance hole (225) is used to avoid a supporting element (300) supporting the wafer; and the second avoidance hole is arranged in cooperation with a structural hole of the lower cavity (210).

4. The degassing chamber according to claim 1, characterized in that The material of the protective component (220) is metal.

5. The degassing chamber according to claim 2, characterized in that The roughness of the surface of the protective component (220) facing away from the lower cavity (210) is less than 1.6 μm.

6. The degassing chamber according to claim 1, characterized in that The thickness of the protective component (220) is a, wherein 3mm≤a≤5mm.

7. The degassing chamber according to claim 2, characterized in that The degassing chamber further comprises at least one vacuum screw (230), wherein the vacuum screw (230) passes through the bottom wall of the protective component (220) and is screwed onto the bottom wall of the lower cavity (210).

8. The degassing chamber according to any one of claims 2-3, 5 and 7, characterized in that The first cavity (020) is further provided with a reflection screen (140), the reflection screen (140) being fixedly connected to the upper cavity body (130), and the reflection screen (140) being used to reflect the energy generated by the heating component (110) to the dielectric window (120).

9. The degassing chamber according to claim 8, characterized in that The heating assembly (110) includes a plurality of heating components (111), the degassing chamber also includes a plurality of bases (112), the upper cavity (130) is provided with a plurality of mounting holes (131), the plurality of bases (112) are respectively fixedly arranged in the plurality of mounting holes (131) in a one-to-one correspondence, and the plurality of heating components (111) are respectively fixedly arranged in the plurality of bases (112) in a one-to-one correspondence.

10. The degassing chamber according to claim 9, characterized in that The base (112) is in a "T" shape, and comprises a horizontal section (1121) and a vertical section (1122), wherein the horizontal section (1121) is located outside the first cavity (020), the vertical section (1122) is inserted into the mounting hole (131), and the heating component (111) is fixedly connected to the vertical section (1122).

11. The degassing chamber according to claim 10, characterized in that The degassing chamber further comprises a protective cover (150), wherein the protective cover (150) is fixedly connected to the cavity body, and a protective cavity (030) is constructed at the upper part of the cavity body, and the horizontal section (1121) is located in the protective cavity (030).

12. A semiconductor device, characterized in that: A degassing chamber comprising any one of claims 1-11.

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