Package structure
By using metal columns in the packaging structure instead of traditional through-holes or lead bonding, the problem of insufficient heat dissipation performance of high-power multi-chip products is solved, achieving more efficient heat dissipation effects and higher productivity.
Patent Information
- Application Number
- CN202421157416.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-24
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2034-05-24
AI Technical Summary
The prior art is difficult to meet the heat dissipation needs in high-power multi-chip products, and traditional lead frame substrates and molded compound heat dissipation components lack heat dissipation performance under high voltage and high power conditions.
Instead of the existing source and drain through holes or lead bonding, metal columns are used to arrange on the metal layer through metal columns to form a larger heat dissipation area/heat dissipation path, thereby improving heat dissipation efficiency.
By using metal columns for heat dissipation, a larger heat dissipation area/radiation path can be provided than existing through holes with different aspect ratios, which improves heat dissipation efficiency, and metal columns are easier to form, improving productivity and reliability.
Smart Images
Figure CN222530423U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and more specifically, to a packaging structure. Background Art
[0002] like Figure 1A As shown, the QFN (Quad Flat No-leads Package) and aQFN (Advanced Quad Flat No-leads Package) structures 10 dissipate heat through their thick lead frame substrate 12, but this is not enough for high-power multi-chip products that require better heat dissipation performance.
[0003] The WB (wire bond) or FC (flip chip) on the traditional lead frame substrate does not meet the heat dissipation requirements in high-power multi-chip integrated packages or high-voltage charging products, resulting in a large amount of heat generated in these products. It is difficult to dissipate heat through organic substrates. Figure 1B As shown, it is not enough to dissipate heat with an additional heat sink 19 on the molding compound 18. High thermal conductivity molding compounds have been developed to solve the heat dissipation problem, such as EMC (Epoxy molding compound). However, any changes in EMC require lengthy product qualification to ensure high assembly yields and long-term performance monitoring to ensure product quality and reliability.
[0004] like Figure 2A , Figure 2B As shown in FIG. 1 , both the eMUF (exposed molded underfill) 22 and the heat dissipation component 24 on the eMUF 22 can exhibit enhanced heat dissipation performance. However, generally, the heat dissipation structure of the flip chip / back fan-out chip 26 is to grind the eMUF 22 encapsulating the chip 26 until the back side of the chip 26 is exposed by the CPD / eMUF 22, and then thermally connect the exposed back side of the chip 26 to the heat dissipation component 24. However, grinding the back side can easily cause damage to the chip 26 25 (see FIG. 1 ). Figure 2A ).
[0005] The a-EASI (Advanced Embedded Active System Integration) structure embeds high-power multi-chips on a lead frame substrate, which has good heat dissipation through the lead frame substrate. Figure 3 As shown, this structure requires the formation of plated through holes 32 with different aspect ratios, which is always a significant technical and production challenge. Figure 3 The a-EASI structure in FIG. 1 connects the back side of the chip 36 to the heat dissipation component 34, so the back side of the chip 34 does not need to be grounded. However, the through hole 32 used for heat dissipation in the a-EASI structure is made by sandblasting or laser. The aspect ratio of the tapered heat dissipation through hole 32 is such that its narrow portion will result in a reduction in the heat dissipation area / heat dissipation path, and the heat dissipation efficiency will be reduced. Utility Model Content
[0006] In view of the above problems, the present application proposes a packaging structure with improved heat dissipation performance.
[0007] The technical solution of this application is implemented as follows:
[0008] According to one aspect of the present application, a packaging structure is provided, which includes: a substrate, including a core layer and a metal layer arranged on the core layer; a tube core, arranged on the metal layer, wherein the tube core includes an active surface and a passive surface opposite to the active surface, and the passive surface faces the metal layer; a metal column, arranged on the metal layer, wherein the metal column includes a lower part arranged on the metal layer and an upper part arranged on the lower part, wherein the width of the upper part in the horizontal direction is smaller than the width of the lower part.
[0009] In some embodiments, the hardness of the core layer is greater than the hardness of the metal layer.
[0010] In some embodiments, the core layer is a ceramic material.
[0011] In some embodiments, the width of the metal layer in the horizontal direction is smaller than the width of the core layer.
[0012] In some embodiments, the core layer is exposed by the metal layer.
[0013] In some embodiments, a side surface of the metal layer includes a curved surface.
[0014] In some embodiments, the package structure further includes: a second tube die disposed on the metal layer, wherein the metal column is disposed between the tube die and the second tube die.
[0015] In some embodiments, the metal layer includes a trench, a first portion, and a second portion, wherein the trench is located between the first portion and the second portion, the die is disposed on the first portion, and the second die is disposed on the second portion.
[0016] In some embodiments, the trench penetrates the metal layer to expose the core layer.
[0017] In some embodiments, the packaging structure further includes: a lead frame, the lead frame is located above the metal pillar and the tube core, wherein the metal pillar is directly connected to the lead frame.
[0018] The above technical solution of the present application uses metal pillars to replace existing source and drain through holes or wire bonding for heat dissipation, which can provide a larger heat dissipation area / heat dissipation path than existing through holes with different aspect ratios, thereby improving heat dissipation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0020] Figure 1A It is a schematic cross-sectional view of an existing QFN / aQFN structure.
[0021] Figure 1B Schematic diagram of a cross-section of a package structure that uses a heat sink on a molding compound to dissipate heat.
[0022] Figure 2A and Figure 2B They are cross-sectional schematic diagrams at two stages of forming the existing eMUF structure.
[0023] Figure 3 It is a cross-sectional schematic diagram of the existing a-EASI structure.
[0024] Figure 4 is a schematic cross-sectional view of a packaging structure according to an embodiment of the present application.
[0025] Figure 5A According to an embodiment Figure 4 An enlarged schematic diagram of area AA in FIG.
[0026] Figure 5B According to another embodiment, Figure 4 An enlarged schematic diagram of area AA in FIG.
[0027] 6A to 6F is formed Figure 4 Schematic cross-sectional views of the packaging structure at multiple steps are shown.
[0028] Figure 7 is a schematic cross-sectional view of a packaging structure according to another embodiment of the present application.
[0029] FIG. 8A to FIG. 8F is formed Figure 7 Schematic cross-sectional views of the packaging structure at multiple steps are shown.
[0030] Fig. 9 is a schematic diagram of a packaging structure according to another embodiment of the present application.
[0031] FIG. 10A to FIG. 10F is formed Fig. 9 Schematic cross-sectional views of the packaging structure at multiple steps are shown.
[0032] Fig.11 is a schematic diagram of a packaging structure according to another embodiment of the present application.
[0033] FIG. 12A to FIG. 12F is formed Fig.11 Schematic cross-sectional views of the packaging structure at multiple steps are shown.
[0034] Fig.13 is a schematic diagram of a packaging structure according to another embodiment of the present application.
[0035] FIG. 14A to FIG. 14F is formed Fig.13 Schematic cross-sectional views of the packaging structure at multiple steps are shown.
[0036] Fig.15 is a schematic diagram of a packaging structure according to another embodiment of the present application.
[0037] FIG. 16A to FIG. 16G is formed Fig.15 Schematic cross-sectional views of the packaging structure at multiple steps are shown.
[0038] Fig.17 is a schematic diagram of a packaging structure according to another embodiment of the present application.
[0039] 18A to 18F is formed Fig.17 Schematic cross-sectional views of the packaging structure at multiple steps are shown.
[0040] Fig.19 is a schematic diagram of a packaging structure according to another embodiment of the present application.
[0041] FIG. 20A to FIG. 20F is formed Fig.19 Schematic cross-sectional views of the packaging structure at multiple steps are shown.
[0042] Fig.21 is a schematic diagram of a packaging structure according to another embodiment of the present application.
[0043] FIG. 22A to FIG. 22F is formed Fig.21 Schematic cross-sectional views of the packaging structure at multiple steps are shown. DETAILED DESCRIPTION
[0044] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.
[0045] The following disclosure provides many different embodiments or examples for realizing different features of the provided subject matter. Specific examples of components and arrangements will be described below to simplify the present invention. Of course, these are merely examples and are not intended to limit the present invention. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are in direct contact, and may also include an embodiment in which an additional component is formed between the first component and the second component so that the first component and the second component may not be in direct contact. Moreover, the present invention may repeat reference numerals in various examples. This repetition is only for simplicity and clarity, and does not itself represent the relationship between the various embodiments and / or configurations discussed.
[0046] In addition, the embodiments and features in the embodiments of the present application may be combined with each other without conflict. The present application provides multiple embodiments of the packaging structure and a method for forming the same. The multiple embodiments of the packaging structure of the present application and a method for forming the same will be described in detail below with reference to the accompanying drawings. It should be understood that the same reference numerals may be used to represent the same components in the various drawings, and in the following description, repeated descriptions of the same components will be omitted.
[0047] Figure 4 FIG. 1 is a schematic cross-sectional view of a package structure 100 according to an embodiment of the present application. Figure 4 , the package structure 100 may include a substrate 110, and the substrate 110 includes a core layer 101 and a metal layer 120. The metal layer 120 is disposed on the core layer 101. The package structure 100 may also include at least one tube core disposed on the metal layer 120. In this embodiment, a first tube core 301 and a second tube core 302 are shown. The first tube core 301 includes an active surface 301a and a passive surface 301b opposite to the active surface 301a. The second tube core 302 includes an active surface 302a and a passive surface 302b opposite to the active surface 302a. The passive surfaces 301b and 302b of the first tube core 301 and the second tube core 302 face the metal layer 120 respectively. The first tube core 301 and the second tube core 302 can be attached to the metal layer 120 respectively through an attachment layer 305.
[0048] The package structure 100 may further include a metal pillar 140 disposed on the metal layer 120. In some embodiments, the material of the metal pillar 140 may be copper, or other applicable metal materials. The first tube core 301 and the second tube core 302 may dissipate heat via the metal layer 120 and the metal pillar 140. By using the metal pillar 140 instead of the existing source and drain through holes or wire bonding to dissipate heat, a larger heat dissipation area / heat dissipation path can be provided than the existing through holes with different aspect ratios, thereby improving the heat dissipation efficiency. In addition, the metal pillar 140 is easier to form (e.g., formed by electroplating) than the existing through holes with different aspect ratios, so the yield can be improved, and the metal layer 120 can also be more reliable than the through hole.
[0049] In some other embodiments, the material of the core layer 101 may be a low thermal resistance material. In some embodiments, the core layer 101 is a ceramic material. Since the ceramic material has a lower thermal resistance, it can provide better heat dissipation. In some embodiments, the substrate 110 may further include a heat dissipation layer 104 disposed below the core layer 101. In some embodiments, the heat dissipation layer may be a copper layer. A core layer 101 of a ceramic material having a heat dissipation layer 104 is used to obtain better heat dissipation. In some embodiments, the material of the metal layer 120 may be copper, or other applicable metal materials. In some embodiments, the hardness of the core layer 101 (for example, the material is ceramic) is greater than the hardness of the metal layer 120 (for example, the material is copper).
[0050] In some embodiments, the width of the metal layer 120 in the horizontal direction may be smaller than the width of the core layer 101. The core layer 101 may be exposed by the metal layer 120. In some embodiments, at least an edge portion of the core layer 101 may be exposed by the metal layer 120.
[0051] In some embodiments, the metal layer 120 may include a groove 120C, a first portion 120A, and a second portion 120B. The groove 120C is located between the first portion 120A and the second portion 120B. In this embodiment, the groove 120C penetrates the metal layer 120 to expose the core layer 101. The first tube core 301 is disposed on the first portion 120A, and the second tube core 302 is disposed on the second portion 120B.
[0052] Figure 5A According to an embodiment Figure 4 An enlarged schematic diagram of area AA in FIG. Figure 5A, the metal pillar 140 may include a lower portion 142 disposed on the metal layer 120 and an upper portion 144 disposed on the lower portion 142. In some embodiments, the width W1 of the upper portion 144 in the horizontal direction may be less than the width W2 of the lower portion in the horizontal direction. The side surface of the lower portion 412 of the metal pillar 140 is a curved surface (which may be referred to as a lower curved surface). In some embodiments, the side surface of the upper portion 144 of the metal pillar 140 is a curved surface (which may be referred to as an upper curved surface). The curved surface of the side surface of the upper portion 144 may be continuously connected to the curved surface of the side surface of the lower portion 142.
[0053] In some embodiments, the side surface 120S of the metal layer 120 includes a curved surface. In some embodiments, the side surface 120S of the metal layer 120 is a side surface of the groove 120C, that is, the side surface of the groove 120C may include a curved surface. Figure 5A In FIG. 1 , it is shown that the side surface 120S at the groove 120C of the metal layer 120 includes a curved surface. In other embodiments, the side surface at other positions of the metal layer 120 may also include a curved surface. Figure 5A As shown, the trench 120C may penetrate the metal layer 120 and expose the core layer 101 below the trench 120C.
[0054] Figure 5B According to another embodiment, Figure 4 An enlarged schematic diagram of area AA in FIG. Figure 5B Many aspects of Figure 5A The following only describes Figure 5B The difference between Figure 5B As shown, the trench 120C may not penetrate the metal layer 120. The metal layer 120 covers the core layer 101 below the trench 120C. In this embodiment, the side surface 120S of the trench 120C may also include a curved surface.
[0055] Return to reference Figure 4 At least one metal pillar 140 may be disposed on the first portion 120A of the metal layer 120, and / or at least one metal pillar 140 may be disposed on the second portion 120B. Figure 4 In the embodiment, at least one metal pillar 140 is disposed on each of the first portion 120A and the second portion 120B. In the present embodiment, the metal pillar 140 is disposed on the first portion 120A at a side of the first tube core 301 away from the second tube core 302. The metal pillar 140 is disposed on the second portion 120B at a side of the second tube core 302 adjacent to the first tube core 301, that is, between the first tube core 301 and the second tube core 302. In other embodiments, the metal pillar 140 may also be disposed at other positions on the first portion 120A and the second portion 120B.
[0056] In some embodiments, the package structure 100 may further include a patterned metal layer 160, and an end of the metal pillar 140 opposite to the metal layer 120 (i.e., the upper end of the metal pillar 140) is connected to the metal layer 160. Corresponding electrical connectors 301e and 302e are respectively disposed on the active surfaces 301a and 302a of the first tube core 301 and the second tube core 302. The electrical connectors 301e and 302e are directly connected to the metal layer 160, respectively.
[0057] The encapsulation layer 330 is disposed on the core layer 101. The encapsulation layer 330 encapsulates the metal layer 120, the metal pillar 140, the first tube core 301, and the second tube core 302. In some embodiments, the material of the encapsulation layer 330 can be a molding compound. In some embodiments, the thermal resistance of the core layer 101 (e.g., ceramic) can be lower than that of the encapsulation layer 330 (e.g., molding compound).
[0058] In addition, an ENIG layer 162 covers the surface of the metal layer 160. A solder mask layer 350 is formed on the mold layer 330 and surrounds the patterned metal layer 160 and the ENIG layer 162, which is exposed by the solder mask layer 350.
[0059] In some embodiments, the first die 301 and / or the second die 302 may be a power die. The electrical connectors 301e and 302e may be electrically connected to the corresponding metal pillars 140, wherein the power supply current may enter and exit the first die 301 and the second die 302 via the metal pillars 140 and the electrical connectors 301e and 302e. In some embodiments, the package structure 100 may be used for better heat dissipation and power distribution in PMIC (Power management IC), EVB (electric vehicle battery), high-power modules for high-power charging pile applications, and system management. By using metal pillars 140 instead of existing source and drain vias or wire bonds to conduct current and dissipate heat, an increased heat dissipation area / path is provided, providing better thermal performance for high-power multi-chip integration and high-voltage charging products.
[0060] 6A to 6F is formed Figure 4 The package structure 100 is a schematic cross-sectional view at multiple steps. Fig. 6A , providing a core layer 101 with a heat dissipation layer 104 , and a metal layer 120 located on the core layer 101 .
[0061] refer to Figure 6B, and then forming a plurality of metal pillars 140 on the metal layer 120. In some embodiments, a photoresist is used to define the metal pillars 140. Forming a plurality of metal pillars 140 may include the following steps: covering the metal layer 120 with a photoresist layer, forming openings in the photoresist layer for defining the metal pillars 140, then electroplating a metal material in the openings to form the metal pillars 140, and finally removing the photoresist. In some embodiments, since the metal pillars 140 are defined by the photoresist, the following may be produced: Figure 5A and Figure 5B The structure described. The present application can solve the problem of the aspect ratio of the heat dissipation through hole defined by sandblasting / laser by using the heat dissipation interconnection component defined by photoresist.
[0062] Then, the metal layer 120 is etched, for example, by an etching process to form a groove 120C. The groove 120C divides the metal layer 120 into a first portion 120A and a second portion 120B. In some embodiments, the groove 120C may penetrate the metal layer 120. In some other embodiments, the groove 120C may not penetrate the metal layer 120.
[0063] refer to Figure 6C , the first tube die 301 and the second tube die 302 are respectively bonded to the first part 120A and the second part 120B of the metal layer 120. In this embodiment, the passive surfaces of the first tube die 301 and the second tube die 302 face the metal layer 120 and can be attached to the metal layer 120 through the attachment layer 305, and the active surfaces face away from the metal layer 120. The active surfaces of the first tube die 301 and the second tube die 302 are both provided with respective electrical connectors 310e and 302e.
[0064] refer to Fig.6D , a mold encapsulation layer 330 is formed on the core layer 101. A grinding process is then performed to expose the electrical connectors 301e and 302e of the first die 301 and the second die 302, and the metal pillars 140 through the mold encapsulation layer 330.
[0065] refer to Fig. 6E , for example, another patterned metal layer 160 is formed by an electroplating process. The pattern of the metal layer 160 can be formed according to the design, and the metal layer 160 is connected to the corresponding metal pillars 140 or electrical connectors 301e, 302e (see Fig.6D )connect.
[0066] refer to Fig. 6F , a solder resist layer 350 is formed on the mold sealing layer 330 to surround the patterned metal layer 160. Then, on the metal layer 160 (see Fig. 6E ) is formed on the surface of the electroless nickel-gold plating layer 162. Thus, the package structure 100 is formed. It should be understood that compared to Fig. 6E The structure shown in Fig. 6FThe structure shown in is upside down.
[0067] Figure 7 FIG. 2 is a schematic cross-sectional view of a package structure 200 according to another embodiment of the present application. Figure 7 The package structure 200 includes a core layer 101 and a metal layer 120 disposed on the core layer 101. The first tube core 301 and the second tube core 302 are disposed on the first part 120A and the second part 120B of the metal layer 120. The first part 120A and the second part 120B are separated by a groove 120C. The metal layer 120 can be similar to the above reference Figure 5A and Figure 5B The passive surfaces of the first tube core 301 and the second tube core 302 face the metal layer 120 and are attached to the metal layer 120 through the attachment layer 305. Electrical connectors 301e and 302e are respectively arranged on the active surfaces of the first tube core 301 and the second tube core 302. A plurality of solder balls 390 are connected to each of the electrical connectors 301e and 302e.
[0068] The metal pillar 140 is disposed on the first portion 120A and the second portion 120B of the metal layer 120. The mold encapsulation layer 330 encapsulates the heat dissipation layer 104, the core layer 101, the metal layer 120, the metal pillar 140, and the first tube core 301 and the second tube core 302. The top of the metal pillar 140 may be exposed by the mold encapsulation layer 330. A solder ball 390 is disposed on the top of the metal pillar 140. The metal pillar 140 may have the above reference Figure 5A and Figure 5B The structure shown.
[0069] FIG. 8A to FIG. 8F is formed Figure 7 The schematic cross-sectional views of the package structure 200 at multiple steps are shown. Fig. 8A , providing a core layer 101 with a heat dissipation layer 104 , and a metal layer 120 located on the core layer 101 .
[0070] refer to Figure 8B , for example, a plurality of metal pillars 140 are formed on the metal layer 120 by an electroplating process. According to design requirements, the metal pillars 140 can be formed at any appropriate position on the metal layer 120. Then, for example, by an etching process, the metal layer 120 is etched to form a groove 120C; and the core layer 101 and the heat dissipation layer 104 are cut into separate core layers 101. After cutting, the metal layer 120 on each core layer 101 is divided into a first part 120A and a second part 120B by the groove 120C.
[0071] Then, metal pillars 140 are formed on the first portion 120A and the second portion 120B of the metal layer 120, respectively. In some embodiments, photoresist is used to define the metal pillars 140 (as described above with reference to FIG. Figure 6B described).
[0072] refer to Figure 8C , reconfigure each core layer 101 on the tape 802. Then, the first tube core 301 and the second tube core 302 are respectively bonded to the first part 120A and the second part 120B of the metal layer 120 on each core layer 101. In this embodiment, the passive surface of the first tube core 301 and the second tube core 302 faces the metal layer 120, and the active surface faces away from the metal layer 120. The active surfaces of the first tube core 301 and the second tube core 302 are both provided with respective electrical connectors 301e and 302e.
[0073] refer to Fig.8D A mold layer 330 is formed on the tape 802 to encapsulate each core layer 101, the metal layer 120, the first die 301, and the second die 302. A grinding process is then performed to expose each electrical connection 301e, 302e, and the metal pillar 140 through the mold layer 330.
[0074] refer to Fig. 8E ,Will Fig.8D The tape 802 in the embodiment is removed. For example, the electrical connectors 301e, 302e and the metal pillars 140 (see FIG. 1 ) are formed by a printing process. Fig.8D ) is formed on the solder 390'.
[0075] refer to Fig.8F , perform the reflow process, so that Fig. 8E The solder 390' in the solder ball 390 is then soldered to the position between the two core layers 101. Fig. 8E The structure shown is cut so that a single core layer 101 is encapsulated by a single encapsulation layer 330 .
[0076] Fig. 9 FIG. 3 is a schematic diagram of a packaging structure 300 according to another embodiment of the present application. Fig. 9 The package structure 300 includes a substructure 200'. The substructure 200' has the above reference Figure 7 The substructure 200 ′ is similar to the package structure 200 described above. Figure 7 The package structure 200 is inverted.
[0077] The substructure 200' is disposed on a substrate 902, and the electrical connectors 301e and 302e of the first tube core 301 and the second tube core 302 can be connected to the substrate 902 through the solder balls 390. The end of the metal pillar 140 opposite to the metal layer 120 (i.e., the lower end of the metal pillar 140) is connected to the substrate 902 through the solder balls 390. Another solder ball 909 is disposed below the substrate 902.
[0078] In addition, another third tube core 303 and at least one electronic device 904 ( Fig. 9 904 is a passive electronic device. A heat dissipation cover 920 is also provided on the substrate 902. The heat dissipation cover 920 defines a space on the substrate 902 for accommodating the substructure 200', the third tube core 303 and the electronic device 904. The heat dissipation layer 104 and the third tube core 303 in the substructure 200' are connected to the heat dissipation cover 920 through the corresponding heat conductive layer 905.
[0079] FIG. 10A to FIG. 10F is formed Fig. 9 The schematic cross-sectional views of the package structure 300 at multiple steps are shown. Fig. 10A , providing a core layer 101 with a heat dissipation layer 104 , and a metal layer 120 located on the core layer 101 .
[0080] refer to Fig. 10B , and then forming a plurality of metal pillars 140 on the metal layer 120. In some embodiments, a photoresist is used to define the metal pillars 140 (as described above with reference to Figure 6B As described above, for example, the metal layer 120 is etched by an etching process to form a groove 120C, dividing the metal layer 120 into a first portion 120A and a second portion 120B. The groove 120C may penetrate the metal layer 120 or may not penetrate the metal layer 120.
[0081] A plurality of metal pillars 140 are respectively formed on the first portion 120A and the second portion 120B.
[0082] refer to Fig. 10C The passive surfaces of the first die 301 and the second die 302 face the metal layer 120 and are respectively bonded to the first portion 120A and the second portion 120B of the metal layer 120. The active surfaces of the first die 301 and the second die 302 are both provided with respective electrical connectors 301e and 302e.
[0083] refer to Fig. 10D , a mold encapsulation layer 330 is formed on the core layer 101 . A grinding process is then performed to expose the electrical connectors 301 e and 302 e and the metal pillars 140 of the first die 301 and the second die 302 through the mold encapsulation layer 330 .
[0084] refer to Fig.10E For example, by printing process, the electrical connectors 301e, 302e and the metal pillars 140 (see Fig. 10D ) to form a solder ball 390 on the substructure 200 ′.
[0085] refer to Fig.10F , the solder balls 390 of the substructure 200' are connected to the substrate 902 with the solder balls 909. Fig. 9 and Fig.10F As shown, a third die 303 and at least one electronic device 904 (see FIG. 1 ) are bonded to the substrate 902. Fig. 9 ), and then connect the heat sink 920 to the substrate 902. The third die 303 and the heat sink layer 104 in the substructure 200' are connected to the heat sink 920 through the heat conductive layer 905.
[0086] Fig.11 FIG. 4 is a schematic diagram of a packaging structure 400 according to another embodiment of the present application. Fig.11 The package structure 400 includes a core layer 101 and a metal layer 120 disposed on the core layer 101. The first tube core 301 and the second tube core 302 are disposed on the first part 120A and the second part 120B of the metal layer 120. The first part 120A and the second part 120B are separated by a groove 120C. The metal layer 120 can be similar to the above reference Figure 5A or Figure 5B The passive surfaces of the first tube core 301 and the second tube core 302 face the metal layer 120, and are respectively attached to the first part 120A and the second part 120B of the metal layer 120 through the attachment layer 305. The metal pillar 140 is disposed in the first part 120A and the second part 120B of the metal layer 120. The metal pillar 140 may have the above reference Figure 5A and Figure 5B The structure shown in FIG. 1 is a structure in which electrical connectors 301 e and 302 e are disposed on the active surfaces of the first tube core 301 and the second tube core 302 , respectively. The solder balls 390 are connected to the electrical connectors 301 e and 302 e and the metal pillars 140 .
[0087] The end (i.e., the upper end) of the metal pillar 140 opposite to the metal layer 120 is connected to the lead frame 1102 through the solder ball 390. Each solder ball 390 is connected to the lead frame 1102. The mold layer 330 encapsulates the heat dissipation layer 104, the core layer 101, the metal layer 120, the metal pillar 140, and the first tube core 301 and the second tube core 302. The solder layer 1109 is disposed on the lead frame 1102.
[0088] FIG. 12A to FIG. 12F is formed Fig.11The schematic cross-sectional views of the package structure 400 at multiple steps are shown. Fig. 12A , providing a core layer 101 with a heat dissipation layer 104 , and a metal layer 120 located on the core layer 101 .
[0089] refer to Fig. 12B , a plurality of metal pillars 140 are formed on the metal layer 120. In some embodiments, a photoresist is used to define the metal pillars 140 (as described above with reference to Figure 6B 120B). Then, for example, the metal layer 120 is etched by an etching process to form a groove 120C. The groove 120C divides the metal layer 120 into a first portion 120A and a second portion 120B. In some embodiments, the groove 120C may penetrate the metal layer 120. In some other embodiments, the groove 120C may not penetrate the metal layer 120.
[0090] The metal layer 120 is further etched to form another groove 120D, at which the core layer 101 and the heat dissipation layer 104 are cut to form a Fig. 12C The single core layer 101 shown. Fig. 12C As shown, the metal layer 120 on each core layer 101 has a first portion 120A and a second portion 120B. The first tube die 301 and the second tube die 302 are respectively bonded to the first portion 120A and the second portion 120B of each metal layer 120. In this embodiment, the passive surfaces of the first tube die 301 and the second tube die 302 face the metal layer 120, and the active surfaces face away from the metal layer 120. The active surfaces of the first tube die 301 and the second tube die 302 are both provided with respective electrical connectors 301e and 302e.
[0091] refer to Fig.12D ,Will Fig. 12C The structure in the embodiment is inverted and soldered via solder ball 390 (see Fig.11 )Will Figure 6C The structure in is bonded to lead frame 1102.
[0092] refer to Fig.12E , a mold encapsulation layer 330 is formed to encapsulate Fig.12D In the structure, the lead frame 1102 is exposed by the molding layer 330.
[0093] refer to Fig.12F , for example, by forming a layer covering the lead frame 1102 (see Fig.12E ) on the solder layer 1109. Then, cutting is performed at the position between the two core layers 101, so that a single core layer 101 is encapsulated by a single molding layer 330, and a packaging structure 400 is obtained.
[0094] Fig.13FIG. 5 is a schematic diagram of a packaging structure 500 according to another embodiment of the present application. Fig.11 The package structure 500 includes a core layer 101 and a metal layer 120 disposed on the core layer 101. The first tube core 301 and the second tube core 302 are disposed on the first part 120A and the second part 120B of the metal layer 120. The first part 120A and the second part 120B are separated by a groove 120C. The metal layer 120 can be similar to the above reference Figure 5A and Figure 5B The passive surfaces of the first tube core 301 and the second tube core 302 face the metal layer 120. The metal column 140 is disposed on one of the first portion 120A and the second portion 120B of the metal layer 120. Fig.13 In the embodiment, the metal pillar 140 is disposed on the second portion 120B. In the present embodiment, the width of the first tube core may be greater than the width of the second tube core 302. The metal pillar 140 may have the above reference Figure 5A and Figure 5B The structure shown in FIG. 1 is a structure in which electrical connectors 301 e and 302 e are disposed on the active surfaces of the first tube core 301 and the second tube core 302 . A plurality of solder balls 390 are connected to the corresponding electrical connectors 301 e and 302 e and the metal pillars 140 .
[0095] The solder balls 390 are connected to the PPF (Pre-palated lead frame) 1209. The PPF 1209 may include a lead frame body 1209A connected to each solder ball 390, and a chemical nickel-gold plating layer 1209B located on the upper surface of the lead frame body 1209A. The material of the lead frame body 1209A may be copper, for example. The mold encapsulation layer 330 encapsulates the heat dissipation layer 104, the core layer 101, the metal layer 120, the metal column 140, the first tube core 301, the second tube core 302 and the PPF 1209. The chemical nickel-gold plating layer 1209B of the PPF 1209 is exposed by the mold encapsulation layer 330.
[0096] FIG. 14A to FIG. 14F is formed Fig.13 The schematic cross-sectional views of the package structure 500 at multiple steps are shown. Fig.14A , providing a core layer 101 with a heat dissipation layer 104 , and a metal layer 120 located on the core layer 101 .
[0097] refer to Fig. 14B , a plurality of metal pillars 140 are formed on the metal layer 120. In some embodiments, a photoresist is used to define the metal pillars 140 (as described above with reference to Figure 6BThen, for example, the metal layer 120 is etched by an etching process to form a groove 120C. The groove 120C divides the metal layer 120 into a first portion 120A and a second portion 120B. The groove 120C may penetrate the metal layer 120 or may not penetrate the metal layer 120.
[0098] The metal layer 120 is further etched to form another groove 120D, at which the core layer 101 and the heat dissipation layer 104 are cut to form a Fig. 14C The single core layer 101 shown. Fig. 14C As shown, the metal layer 120 on each core layer 101 has a first portion 120A and a second portion 120B. The first tube core 301 and the second tube core 302 are respectively bonded to the first portion 120A and the second portion 120B of each metal layer 120. In this embodiment, the metal column 140 is only arranged on the second portion 120B. The active surfaces of the first tube core 301 and the second tube core 302 are away from the metal layer 120. The active surfaces of the first tube core 301 and the second tube core 302 are respectively provided with respective electrical connectors 301e and 302e.
[0099] refer to Fig.14D ,Will Fig. 14C The structure in the embodiment is inverted and soldered via solder ball 390 (see Fig.13 )Will Fig. 14C The structure in is bonded to PPF 1209. Reference Fig.14E , a mold encapsulation layer 330 is formed to encapsulate Fig.14D In the structure, the PPF 1209 is exposed by the mold encapsulation layer 330. Fig.14F , and then cutting is performed at a position between two core layers 101 , so that a single core layer 101 is encapsulated by a single molding layer 330 , thereby obtaining a packaging structure 500 .
[0100] Fig.15 FIG. 6 is a schematic diagram of a packaging structure 600 according to another embodiment of the present application. Fig.15 The package structure 600 includes a core layer 101 and an adhesive layer 602 disposed on the core layer 101. The first tube die 301 and the second tube die 302 are disposed on the adhesive layer 602. The active surfaces of the first tube die 301 and the second tube die 302 face the adhesive layer 602. The metal pillar 140 is disposed on the adhesive layer 602. The metal pillar 140 may have the above reference Figure 5A and Figure 5B In some embodiments, the core layer 101 can be made of ceramics or other low thermal resistance materials.
[0101] In addition, another metal layer 609 is disposed on the first die 301, the second die 302, and the metal pillar 140. The passive surfaces of the first die 301 and the second die 302 are connected to the metal layer 609 through the attachment layer 305, respectively. The mold encapsulation layer 330 encapsulates the core layer 101, the adhesive layer 602, the metal pillar 140, the first die 301, the second die 302, and the lower portion of the metal layer 609. The upper portion of the metal layer 609 exposed by the mold encapsulation layer 330 is covered by the chemical nickel-gold plating layer 610.
[0102] Furthermore, a plurality of through vias 622 pass through adhesive layer 602 and core layer 101 to connect to first die 301, the active surface of second die 302, and metal pillars 140. In some embodiments, the width of through vias 622 may be smaller than the width of metal pillars 140.
[0103] The patterned further metal layer 652 is disposed below the core layer 101 and connected to the plurality of through-holes 622. The solder layer 654 covers the exposed surface of the metal layer 652.
[0104] FIG. 16A to FIG. 16G is formed Fig.15 The schematic cross-sectional views of the package structure 600 at multiple steps are shown. Fig.16A , the adhesive layer 602 is attached to the core layer 101. The adhesive layer 602 may expose a peripheral portion of the core layer 101.
[0105] refer to Fig. 16B , through the adhesive layer 602 and the core layer 101, a plurality of drill holes 650 are formed by a laser drilling process. In addition, the first tube die 301 and the second tube die 302 are placed on the adhesive layer 602. In this embodiment, the active surfaces of the first tube die 301 and the second tube die 302 face the adhesive layer 602. At this time, there may be a plurality of drill holes 650 (not shown) under the first tube die 301 and the second tube die 302.
[0106] refer to Fig. 16C , a metal column 140 is formed above the drill hole 650 exposed by the first tube core 301 and the second tube core 302 (see Fig.15 ), the metal column 140 protrudes from the adhesive layer 602 and extends upward. Then, the metal column 140 (see Fig.15 ) is attached with a metal layer 609.
[0107] refer to Fig.16D , a molding layer 330 is formed between the metal layer 609 and the core layer 101 .
[0108] refer to Fig.16E , performing an electroplating process below the core layer 101 to form a through hole 622 filling the drill hole 650 in the core layer 101 (see Fig.15), and another metal layer 652 connected to the through hole 622 is formed under the core layer 101.
[0109] refer to Fig.16F , an etching process is performed on the metal layer 609 and the metal layer 652 to form patterned metal layers 609 and 652.
[0110] refer to Figure 16G ,exist Fig.16F A chemical nickel-gold plating layer 610 is formed on the surface of the metal layer 609 , and a solder layer 654 is formed on the surface of the metal layer 652 , thereby obtaining a packaging structure 600 .
[0111] Fig.17 FIG. 7 is a schematic diagram of a packaging structure 700 according to another embodiment of the present application. Fig.17 The package structure 700 includes a metal layer 120. The first tube die 301 and the second tube die 302 are disposed on the first portion 120A and the second portion 120B of the metal layer 120. The passive surfaces of the first tube die 301 and the second tube die 302 can be attached to the metal layer 120 by means of an attachment layer 305. The metal column 140 is disposed on the metal layer 120. The metal column 140 can have the above reference Figure 5A and Figure 5B The structure shown in FIG. 1 is a structure in which electrical connectors 301e and 302e are disposed on the active surfaces of the first tube core 301 and the second tube core 302. The solder balls 390 are connected to the electrical connectors 301e and 302e and the metal pillars 140. In this embodiment, a core layer may not be disposed under the metal layer 120.
[0112] Solder balls 390 are connected to half-etch lead frame 1702. Half-etch lead frame 1702 includes a main body portion 1702A and a chemical nickel-gold plating layer 1702B covering the top surface of main body portion 1702A. Molding layer 330 can encapsulate metal layer 120, metal pillar 140, first tube core 301, second tube core 302 and the lower part of main body portion 1702A. The upper part of main body portion 1702A protrudes from molding layer 330, and the top surface of main body portion 1702A is covered by chemical nickel-gold plating layer 1702B.
[0113] 18A to 18F is formed Fig.17 The schematic cross-sectional views of the package structure 700 at multiple steps are shown. Fig.18A , providing a metal layer 120. A plurality of metal pillars 140 are formed on the metal layer 120. In some embodiments, a photoresist is used to define the metal pillars 140 (as described above with reference to Figure 6B In another embodiment, an etching process may also be used to form a plurality of metal pillars 140 by etching the metal layer 120.
[0114] Then, refer to Fig.18B For example, by a punching or cutting process, the metal layer 120 is divided into a plurality of parts, such as two first parts 120A and two second parts 120B.
[0115] refer to Fig.18C The two first tube cores 301 and the two second tube cores 302 are respectively bonded to the first part 120A and the second part 120B of the metal layer 120. The active surfaces of the first tube core 301 and the second tube core 302 are away from the metal layer 120. The active surfaces of the first tube core 301 and the second tube core 302 are provided with respective electrical connectors 301e and 302e.
[0116] refer to Fig.18D ,Will Fig.18C The structure in the embodiment is inverted and soldered via solder ball 390 (see Fig.17 )Will Fig.18C The structure in is bonded to the half-etched lead frame 1702. Fig.18E , forming a mold sealing layer 330 to encapsulate Fig.18D In the structure, the half-etched lead frame 1702 is exposed by the molding layer 330. Fig.18F ,right Fig.18E The structure obtained in the embodiment is cut so that a single mold encapsulation layer 330 can encapsulate the corresponding first tube die 301 and the second tube die 302 (see Fig.17 ), and obtain the packaging structure 700.
[0117] Fig.19 FIG. 8 is a schematic diagram of a packaging structure 800 according to another embodiment of the present application. Fig.19 , the package structure 800 may be similar to the above reference Fig.17 The package structure 700 described below only describes Fig.19 In the package structure 800 , the metal layer 120 includes a first portion 120A and a second portion 120B, and the metal pillar 140 may not be disposed on the first portion 120A and the second portion 120B.
[0118] FIG. 20A to FIG. 20F is formed Fig.19 The package structure 800 is shown as a schematic cross-sectional view at multiple steps. Fig. 20A , providing a metal layer 120. Then, referring to Fig. 20B , for example, by a stamping or slitting process, the metal layer 120 is divided into a plurality of parts, for example, two first parts 120A and two second parts 120B.
[0119] refer to Fig. 20CThe two first tube cores 301 and the two second tube cores 302 are respectively bonded to the first part 120A and the second part 120B of the metal layer 120. The active surfaces of the first tube core 301 and the second tube core 302 are away from the metal layer 120. The active surfaces of the first tube core 301 and the second tube core 302 are provided with respective electrical connectors 301e and 302e.
[0120] refer to Fig.20D ,Will Fig. 20C The structure in the embodiment is inverted and soldered via solder ball 390 (see Fig.19 )Will Fig. 20C The structure in is bonded to the half-etched lead frame 1702. Fig.20E , forming a mold sealing layer 30 to encapsulate Fig.20D In the structure, the half-etched lead frame 1702 is exposed by the molding layer 330. Fig.20F ,right Fig.20E The structure obtained in the embodiment is cut so that a single mold encapsulation layer 330 can encapsulate the corresponding first tube die 301 and the second tube die 302 (see Fig.19 ), and obtain the packaging structure 800.
[0121] Fig.21 FIG. 9 is a schematic diagram of a packaging structure 900 according to another embodiment of the present application. Fig.21 , the package structure 900 may be similar to the above reference Fig.17 The package structure 700 described below only describes Fig.21 . In the package structure 900, the metal layer 120 includes a first portion 120A and a second portion 120B, and the metal pillar 140 may not be provided on one of the first portion 120A and the second portion 120B. In the present embodiment, the metal pillar 140 is not provided on the first portion 120A. The metal pillar 140 is provided on the second portion 120B. The metal pillar 140 is between the first tube core 301 and the second tube core 302. In the present embodiment, the width of the first tube core 301 may be greater than the width of the second tube core 302.
[0122] FIG. 22A to FIG. 22F is formed Fig.21 The package structure 900 is a schematic cross-sectional view at multiple steps. Fig.22A , providing a metal layer 120. A plurality of metal pillars 140 are formed on the metal layer 120. In some embodiments, a photoresist is used to define the metal pillars 140 (as described above with reference to Figure 6B In another embodiment, an etching process may also be used to form the metal pillar 140 by etching the metal layer 120.
[0123] Then, refer to Fig. 22BFor example, by punching or slitting, the metal layer 120 is divided into a plurality of parts, such as two first parts 120A and two second parts 120B. At this time, the metal pillar 140 is only located on the second part 120B.
[0124] refer to Fig. 22C The two first tube cores 301 and the two second tube cores 302 are respectively bonded to the first part 120A and the second part 120B of the metal layer 120. The active surfaces of the first tube core 301 and the second tube core 302 are away from the metal layer 120. The active surfaces of the first tube core 301 and the second tube core 302 are provided with respective electrical connectors 301e and 302e.
[0125] refer to Fig.22D ,Will Fig. 22C The structure in the embodiment is inverted and soldered via solder ball 390 (see Fig.21 )Will Fig. 22C The structure in is bonded to the half-etched lead frame 1702. Fig.22E , forming a mold sealing layer 330 to encapsulate Fig.22D In the structure, the half-etched lead frame 1702 is exposed by the molding layer 330. Fig.22F ,right Fig.22E The structure obtained in the embodiment is cut so that a single molding layer 330 can encapsulate the corresponding first tube die 301 and the second tube die 302 to obtain a packaging structure 900 .
[0126] In summary, the embodiments of the present application use metal pillars 140 to replace existing source and drain through holes or wire bonding for heat dissipation, which can provide a larger heat dissipation area / heat dissipation path than existing through holes with different aspect ratios, thereby improving heat dissipation efficiency. In addition, the metal pillars 140 are easier to form (e.g., formed by electroplating) than existing through holes with different aspect ratios, so the yield can be improved, and the metal layer 120 can also be more reliable than through holes. By using a core layer 101 with lower thermal resistance (e.g., a ceramic material), better heat dissipation can be provided. Better heat dissipation can be further achieved by using a core layer with a heat dissipation layer.
[0127] The embodiments of the present application can be used for better heat dissipation and power distribution in high-power modules and system management for PMIC, EVB, and high-power charging pile applications. By using metal pillars 140 instead of existing source and drain vias or wire bonding to conduct current and dissipate heat, an increased heat dissipation area / path is provided, providing better thermal performance for high-power multi-chip integration and high-voltage charging products.
[0128] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims
1. A packaging structure, characterized in that: include: A substrate, comprising a core layer and a metal layer disposed on the core layer; A tube core is arranged on the metal layer, wherein the tube core comprises an active surface and a passive surface opposite to the active surface, and the passive surface faces the metal layer; A metal column is arranged on the metal layer, wherein the metal column includes a lower portion arranged on the metal layer and an upper portion arranged on the lower portion, wherein a width of the upper portion in a horizontal direction is smaller than a width of the lower portion.
2. The packaging structure according to claim 1, characterized in that: The hardness of the core layer is greater than the hardness of the metal layer.
3. The packaging structure according to claim 2, characterized in that: The core layer is made of ceramic material.
4. The packaging structure according to claim 1, characterized in that: The width of the metal layer in the horizontal direction is smaller than the width of the core layer.
5. The packaging structure according to claim 4, characterized in that: The core layer is exposed by the metal layer.
6. The packaging structure according to claim 5, characterized in that: A side surface of the metal layer includes a curved surface.
7. The packaging structure according to claim 1, characterized in that: Also includes: A second tube core is arranged on the metal layer, Wherein, the metal column is arranged between the tube core and the second tube core.
8. The packaging structure according to claim 7, characterized in that: The metal layer includes a trench, a first portion, and a second portion, wherein the trench is located between the first portion and the second portion, the die is disposed on the first portion, and the second die is disposed on the second portion.
9. The packaging structure according to claim 8, characterized in that: The trench penetrates the metal layer to expose the core layer.
10. The packaging structure according to claim 1, characterized in that: Also includes: A lead frame is located above the metal column and the tube core, wherein the metal column is directly connected to the lead frame.