Anti-static semiconductor field effect transistor structure

Abstract

The utility model discloses an anti-static semiconductor field effect transistor structure, comprising a field effect transistor main body and a pin, one end of the field effect transistor main body is fixedly connected with the pin, and the outer side of the field effect transistor main body is covered with a first anti-static net and a second anti-static net. Heat-conducting silicone grease is smeared between the field-effect tube main body and the first anti-static net and between the field-effect tube main body and the second anti-static net, the first anti-static net and the second anti-static net are arranged on the outer side of the field-effect tube main body in a sleeving mode, and the anti-static effect on the field-effect tube main body is achieved through the first anti-static net and the second anti-static net; meanwhile, the phenomenon of short circuit between the pins between the second anti-static nets can be prevented through the anti-static cotton, so that normal work of the pins is guaranteed, the first anti-static nets and the second anti-static nets play a role in heat conduction, the first anti-static nets and the second anti-static nets can increase the heat dissipation area, and the heat dissipation efficiency is improved. Therefore, the heat dissipation efficiency of the field effect transistor main body is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of field effect tubes, in particular to an anti-static semiconductor field effect tube structure. Background Art

[0002] Field effect transistor is abbreviated as field effect transistor. There are two main types: junction field effect transistor and metal-oxide semiconductor field effect transistor. The majority of carriers participate in the conduction, also known as a unipolar transistor. It is a voltage-controlled semiconductor device. It has the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, and a wide safe working area.

[0003] Field effect tubes are prone to failure due to electrostatic breakdown during use. Electrostatic breakdown refers to the discharge of high voltage to a low-impedance carrier, which generates a short, high-peak, high-frequency electric field and current, which damages the structure of the field effect tube and causes performance degradation or failure. Current field effect tubes cannot be protected against electrostatics during use. Therefore, an anti-static semiconductor field effect tube structure is proposed to address the above problems. Utility Model Content

[0004] The technical problem to be solved by the utility model overcomes the existing defects and can effectively solve the problems in the background technology.

[0005] In order to achieve the above purpose, the technical solution adopted by the utility model is:

[0006] An anti-static semiconductor field effect tube structure includes a field effect tube body and a pin, one end of the field effect tube body is fixedly connected to the pin, the outer side of the field effect tube body is covered with a first anti-static net and a second anti-static net, and thermal conductive silicone grease is applied between the field effect tube body and the first anti-static net and the second anti-static net, and a connecting mechanism is provided between the first anti-static net and the second anti-static net.

[0007] Preferably, the first antistatic net and the second antistatic net are made of copper.

[0008] Preferably, antistatic cotton is arranged between the second antistatic net and the pin, and the antistatic cotton is fixedly connected to the second antistatic net.

[0009] Preferably, the connecting mechanism includes a limit plate fixedly connected to the second anti-static net, one end of the limit plate is engaged with a limit pin, the outer side of the limit pin is slidably connected to a connecting shell, the connecting shell is fixedly connected to the first anti-static net, one end of the limit pin is fixedly connected to a connecting rod, one end of the connecting rod is fixedly connected to a push button, and the push button is slidably connected to the connecting shell.

[0010] Preferably, a sliding groove is provided at one end of the connecting shell, and the connecting rod is slidably connected to the connecting shell through the sliding groove.

[0011] Preferably, one end of the connecting rod is fixedly connected to a spring, and the other end of the spring is fixedly connected to the connecting shell.

[0012] Compared with the prior art, the utility model has the following beneficial effects:

[0013] 1. The anti-static semiconductor field effect tube structure is provided with a first anti-static net, a second anti-static net and anti-static cotton; the first anti-static net and the second anti-static net are put on the outside of the field effect tube body, and the first anti-static net and the second anti-static net play an anti-static role on the field effect tube body, and the anti-static cotton can prevent the short circuit between the pins and the second anti-static net, thereby ensuring the normal operation of the pins, and the first anti-static net and the second anti-static net play a role of heat conduction, and the first anti-static net and the second anti-static net can increase the heat dissipation area, thereby improving the heat dissipation efficiency of the field effect tube body.

[0014] 2. The anti-static semiconductor field effect tube structure is convenient for installation and disassembly between the first anti-static net and the second anti-static net and the field effect tube body through the set limit plate, connecting shell, slide groove, push button, connecting rod, spring, limit pin, and the mutual engagement between the limit pin and the limit plate, so as to facilitate the use of the staff. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0016] Figure 1 The utility model is a schematic diagram of the overall structure of the anti-static semiconductor field effect tube structure.

[0017] Figure 2 The utility model is a schematic diagram of the installation structure of the first antistatic net of the antistatic semiconductor field effect tube structure.

[0018] Figure 3 The utility model is a schematic diagram of the installation structure of the limit pin of the anti-static semiconductor field effect tube structure.

[0019] Figure 4 The utility model is a schematic diagram of the installation structure of the spring of the anti-static semiconductor field effect tube structure.

[0020] In the figure: 1. Field effect tube body; 2. Pins; 3. First anti-static net; 4. Second anti-static net; 5. Anti-static cotton; 6. Limit plate; 7. Connecting shell; 8. Slide groove; 9. Push button; 10. Connecting rod; 11. Spring; 12. Limit pin. DETAILED DESCRIPTION

[0021] The utility model is further described below in conjunction with specific implementation methods, wherein the accompanying drawings are only used for exemplary descriptions and represent only schematic diagrams rather than actual drawings, and cannot be understood as limitations on this patent. In order to better illustrate the specific implementation methods of the utility model, some parts of the accompanying drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product. For those skilled in the art, it is understandable that some well-known structures and their descriptions in the accompanying drawings may be omitted. Based on the specific implementation methods in the utility model, all other specific implementation methods obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0022] Example

[0023] like Figure 1-4 As shown, the anti-static semiconductor field effect tube structure includes a field effect tube body 1 and a pin 2, one end of the field effect tube body 1 is fixedly connected to the pin 2, the outer side of the field effect tube body 1 is covered with a first anti-static net 3 and a second anti-static net 4, and thermal conductive silicone grease is applied between the field effect tube body 1 and the first anti-static net 3 and the second anti-static net 4, a connecting mechanism is provided between the first anti-static net 3 and the second anti-static net 4, the first anti-static net 3 and the second anti-static net 4 are put on the outer side of the field effect tube body 1, and the first anti-static net 3 and the second anti-static net 4 play an anti-static role on the field effect tube body 1.

[0024] As a further improvement of the utility model, Figure 1 and Figure 2 As shown, the first antistatic net 3 and the second antistatic net 4 are made of copper, which has thermal conductivity, so that the first antistatic net 3 and the second antistatic net 4 can play a role in heat conduction, and the first antistatic net 3 and the second antistatic net 4 can increase the heat dissipation area, thereby improving the heat dissipation efficiency of the field effect tube body 1.

[0025] As a further improvement of the utility model, Figure 1 As shown, anti-static cotton 5 is arranged between the second anti-static net 4 and the pin 2, and the anti-static cotton 5 is fixedly connected to the second anti-static net 4. The anti-static cotton 5 can prevent short circuit between the pins 2 and the second anti-static net 4, thereby ensuring the normal operation of the pin 2.

[0026] As a further improvement of the present invention, as shown in 1, Figure 3and Figure 4 As shown, the connecting mechanism includes a limit plate 6 fixedly connected to the second anti-static net 4, one end of the limit plate 6 is engaged with a limit pin 12, the outer side of the limit pin 12 is slidably connected to a connecting shell 7, the connecting shell 7 is fixedly connected to the first anti-static net 3, one end of the limit pin 12 is fixedly connected to a connecting rod 10, one end of the connecting rod 10 is fixedly connected to a push button 9, and the push button 9 is slidably connected to the connecting shell 7, and the mutual engagement between the limit pin 12 and the limit plate 6 facilitates the installation and disassembly of the first anti-static net 3 and the second anti-static net 4 and the field effect tube body 1, and is convenient for the use of the staff.

[0027] As a further improvement of the utility model, Figure 4 As shown, a slide groove 8 is provided at one end of the connection shell 7, and the connecting rod 10 is slidably connected to the connection shell 7 through the slide groove 8, so that the slide groove 8 facilitates the sliding of the connecting rod 10 and the connection shell 7.

[0028] As a further improvement of the present invention, one end of the connecting rod 10 is fixedly connected to a spring 11, and the other end of the spring 11 is fixedly connected to the connecting shell 7. The spring 11 applies a pulling force to the connecting rod 10, so that the connecting rod 10 can be tightly engaged with the limiting pin 12 and the limiting plate 6.

[0029] Working process: when the first antistatic net 3 and the second antistatic net 4 need to be covered on the outside of the field effect tube body 1, first apply thermal conductive silicone grease on the outside of the field effect tube body 1, and then gradually cover the first antistatic net 3 and the second antistatic net 4 on the outside of the field effect tube body 1 from both ends of the field effect tube body 1, and at the same time, under the pulling force of the spring 11, the connecting rod 10 with the limit pin 12 is engaged with the limit plate 6, so as to facilitate the installation and disassembly between the first antistatic net 3 and the second antistatic net 4 and the field effect tube body 1, and facilitate the use of the staff. The first antistatic net 3 and the second antistatic net 4 play an antistatic role for the field effect tube body 1, and the first antistatic net 3 and the second antistatic net 4 play a role of heat conduction, and the first antistatic net 3 and the second antistatic net 4 can increase the heat dissipation area, thereby improving the heat dissipation efficiency of the field effect tube body 1, and the antistatic cotton 5 can prevent the short circuit between the pins 2 and the second antistatic net 4, thereby ensuring the normal operation of the pins 2.

[0030] The above is a preferred implementation mode of the utility model. The above shows and describes the basic principles and main features of the utility model and the advantages of the utility model. Technical personnel in this industry should understand that the utility model is not limited to the above embodiments. The above embodiments and descriptions are only for illustrating the principles of the utility model. Without departing from the protection scope of the utility model, the utility model will have various changes and improvements, and these changes and improvements all fall within the scope of the utility model to be protected. The protection scope of the utility model is defined by the attached claims and their equivalents.

Claims

1. An anti-static semiconductor field effect tube structure, comprising a field effect tube body (1) and a pin (2), characterized in that: One end of the field effect tube body (1) is fixedly connected to a pin (2); the outer side of the field effect tube body (1) is covered with a first antistatic net (3) and a second antistatic net (4); thermal conductive silicone grease is applied between the field effect tube body (1) and the first antistatic net (3) and the second antistatic net (4); and a connecting mechanism is provided between the first antistatic net (3) and the second antistatic net (4).

2. The anti-static semiconductor field effect transistor structure according to claim 1, characterized in that: The first antistatic net (3) and the second antistatic net (4) are made of copper.

3. The anti-static semiconductor field effect transistor structure according to claim 1, characterized in that: Antistatic cotton (5) is arranged between the second antistatic net (4) and the pin (2), and the antistatic cotton (5) is fixedly connected to the second antistatic net (4).

4. The anti-static semiconductor field effect transistor structure according to claim 1, characterized in that: The connection mechanism comprises a limit plate (6) fixedly connected to the second antistatic net (4), one end of the limit plate (6) being engaged with a limit pin (12), the outer side of the limit pin (12) being slidably connected to a connection shell (7), the connection shell (7) being fixedly connected to the first antistatic net (3), one end of the limit pin (12) being fixedly connected to a connecting rod (10), one end of the connecting rod (10) being fixedly connected to a push button (9), and the push button (9) being slidably connected to the connection shell (7).

5. The anti-static semiconductor field effect transistor structure according to claim 4, characterized in that: A sliding groove (8) is provided at one end of the connecting shell (7), and the connecting rod (10) is slidably connected to the connecting shell (7) via the sliding groove (8).

6. The anti-static semiconductor field effect transistor structure according to claim 4, characterized in that: One end of the connecting rod (10) is fixedly connected to a spring (11), and the other end of the spring (11) is fixedly connected to the connecting shell (7).

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