Ion beam shaping equipment

Abstract

The utility model discloses an ion beam shaping device which comprises a cavity, and an ion source, a carrying table, a first driving system, a second driving system, a third driving system and a fourth driving system are arranged in a cavity of the cavity. The ion source and the carrying table are arranged along a first direction; the carrying table comprises a supporting assembly which is used for bearing and fixing a workpiece. The first driving system is used for driving the ion source to move along a first direction; the second driving system is used for driving the carrying platform to move along a second direction; the third driving system is used for driving the carrying table to rotate around a first shaft; the fourth driving system is used for driving the supporting assembly to rotate around a second shaft; the first direction is perpendicular to the second direction, and the first shaft is perpendicular to the first direction and the second direction; the second shaft is perpendicular to the bearing face of the supporting assembly and located in the center of the bearing face. Through structural optimization, the size of the ion beam shaping equipment can be reduced, and the space utilization rate can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of workpiece surface treatment, and in particular to an ion beam shaping device. Background Art

[0002] The development of modern optics, electronics, IC technology, information storage technology and thin film science has placed strict requirements on the surfaces of related workpieces. Surfaces with a surface roughness better than the nanometer level are generally called ultra-smooth surfaces.

[0003] Traditional ultra-smooth surface processing methods include bath polishing, float polishing, and ductile polishing. These processing methods all use contact processing methods. Even if they can meet the increasingly stringent surface roughness requirements, there are still sub-surface damages hidden under the surface, which will affect the performance of related workpieces. Sub-surface damage refers to damage that occurs within a certain depth below the surface of the material. This damage often has a significant impact on the performance of the material; sub-surface damage includes microcracks, microcrack extensions, and stress corrosion cracks.

[0004] With the advancement of science and technology, ion beam polishing technology has attracted attention. It can use high-intensity focused ion beams to perform nano-level processing on workpieces, while achieving relatively high-precision processing requirements without causing sub-surface damage to the workpiece.

[0005] Ion beam trimming (IBT) is a device that uses ion beam polishing technology to process the surface of workpieces. The ion beam trimming equipment is equipped with an ion source and a carrier for carrying the workpiece, and is also equipped with multiple axis systems to adjust the relative position between the ion beam and the carrier, or to adjust the processing position of the ion beam on the workpiece on the carrier. The multiple axis systems include linear moving axis systems in three directions, and these three directions are perpendicular to each other, resulting in a large footprint and volume of the cavity of the ion beam trimming equipment, thereby limiting the number of chambers that can be mounted on a single vacuum transfer platform, which is costly for production plants. Utility Model Content

[0006] The purpose of the present application is to provide an ion beam shaping device, which can reduce the volume of the ion beam shaping device through structural optimization, thereby improving space utilization.

[0007] In order to solve the above technical problems, the present application provides an ion beam shaping device, comprising a chamber, wherein an ion source, a carrier, a first driving system, a second driving system, a third driving system and a fourth driving system are arranged in the chamber of the chamber;

[0008] The ion source and the carrier are arranged along a first direction; the carrier includes a support assembly, and the support assembly is used to carry and fix the workpiece;

[0009] The first driving system is used to drive the ion source to move along the first direction; the second driving system is used to drive the carrier to move along the second direction; the third driving system is used to drive the carrier to rotate around the first axis, and the fourth driving system is used to drive the support assembly to rotate around the second axis;

[0010] The first direction is perpendicular to the second direction, the first axis is perpendicular to the first direction and perpendicular to the second direction; the second axis is perpendicular to the bearing surface of the support component and is located at the center of the bearing surface.

[0011] By adopting the above scheme, the ion beam shaping device adds a rotational degree of freedom of the support assembly of the carrier, so that the shaping operation of the workpiece can be achieved with only the movement degrees of freedom in two directions. The movement degrees of freedom in the above two directions are the movement degrees of freedom in the first direction and the second direction. Compared with the traditional shaping device with three movement degrees of freedom, it is equivalent to omitting the movement degrees of freedom in the third direction (the direction perpendicular to the first direction and the second direction), so that the size of the ion beam shaping device in the third direction can be reduced, which is beneficial to reducing the overall volume of the ion beam shaping device, thereby facilitating improving space utilization and reducing production costs.

[0012] In one feasible solution, the first driving system includes a first driving source, a first track and a first slider, the first track extends along the first direction, and the first driving source can drive the first slider to move relative to the first track; the ion source is mounted on the first slider.

[0013] In one feasible solution, the second driving system includes a second driving source, a second track and a second slider, the second track extends along the second direction, and the second driving source can drive the second slider to move relative to the second track; the carrier is mounted on the second slider.

[0014] In one feasible solution, the ion beam shaping device further includes a beam blocker, and the second driving system is further used to drive the beam blocker to move along the second direction so that the beam blocker can be located within the irradiation range of the ion beam generated by the ion source.

[0015] In a feasible solution, the beam blocker and the carrier are installed on the same second slider.

[0016] In a feasible solution, two second driving sources are provided, two second sliders are provided, and the beam blocker and the carrier are respectively mounted on the two second sliders; the two second driving sources can respectively drive the two second sliders to move relative to the second track.

[0017] In a feasible solution, the beam blocker is fixedly connected to the second slide block via a connecting rod.

[0018] In one feasible solution, the third driving system includes a third driving source, a rotation output shaft of the third driving source is transmission-connected to the carrier to drive the carrier to rotate around the first axis; the third driving source is fixed on the second slider.

[0019] In a feasible solution, the fourth driving system includes a fourth driving source and a transmission assembly, and the fourth driving source transmits the rotational driving force to the supporting assembly through the transmission assembly.

[0020] In a feasible scheme, the transmission assembly includes a magnetic fluid shaft, and the magnetic fluid shaft includes an inner shaft, an outer shaft and a magnetic fluid, the outer shaft is outermostly disposed on the inner shaft, the magnetic fluid is disposed between the inner shaft and the outer shaft, the outer shaft is assembled on the housing of the carrier, one end of the inner shaft is connected to the support assembly, and the other end of the inner shaft is transmission-connected to the fourth driving source.

[0021] In a feasible solution, the first direction is a first horizontal direction, the second direction is a vertical direction, and the first axis extends along a second horizontal direction perpendicular to the first horizontal direction.

[0022] In one feasible solution, the chamber includes a first chamber wall and a second chamber wall relative to each other, the ion source is arranged close to the first chamber wall, the carrier is arranged close to the second chamber wall, and the second chamber wall has a transfer port for taking and placing the workpiece; the chamber also includes a door body, and the door body is used to open or close the transfer port.

[0023] In one feasible solution, the ion beam shaping device further comprises a neutralizer, which is used to generate an electron beam flow for neutralizing the ion beam flow generated by the ion source.

[0024] In a feasible solution, the neutralizer is integrated with the ion source, or the neutralizer is installed on the inner wall of the chamber.

[0025] In a feasible solution, the ion source is a focused ion source, a planar ion source, or a divergent ion source. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic side view of the structure of an ion beam shaping device provided in an embodiment of the present application;

[0027] Figure 2A schematic top view of the structure of an ion beam shaping device provided in an embodiment of the present application;

[0028] Figure 3 It is a schematic diagram of the structure in which the robot arm transfers the workpiece to the carrier in a specific embodiment;

[0029] Figure 4 It is a structural diagram of a specific embodiment after the workpiece is fixed on the carrier;

[0030] Figure 5 A simplified structural diagram of an ion beam shaping device for a workpiece during processing in a specific embodiment;

[0031] Figure 6 A schematic diagram of a processing path of an ion beam generated by an ion source on a workpiece;

[0032] Figure 7 A schematic diagram of another processing path of an ion beam generated by an ion source on a workpiece;

[0033] Figure 8 A schematic diagram of another processing path of an ion beam generated by an ion source on a workpiece.

[0034] Description of reference numerals:

[0035] Cavity 10, first cavity wall 11, second cavity wall 12, transmission port 121;

[0036] Ion source 20, beam spot 21, stage 30, neutralizer 40, beam blocker 50, connecting rod 60;

[0037] A first driving system 71, a first track 711, and a first slider 712;

[0038] A second driving system 72, a second track 721, and a second slider 722;

[0039] The third driving system 73, the third driving source 731,

[0040] Robot arm 80, first axis R1, second axis R2, workpiece 01. DETAILED DESCRIPTION

[0041] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0042] Please refer to Figure 1 and Figure 2 , Figure 1 A schematic side view of the structure of an ion beam shaping device provided in an embodiment of the present application is provided. Figure 2 A schematic top view of the structure of an ion beam shaping device in one embodiment of the present application is provided.

[0043] The ion beam shaping device provided in this embodiment is used to perform local shaping or full-area shaping on the working surface of the workpiece 01 so that the working surface of the workpiece 01 can meet the required roughness requirement.

[0044] For example, the workpiece 01 may be a wafer used in the semiconductor field, or a lens used in the optical field.

[0045] In this embodiment, the ion beam shaping device includes a chamber 10, the chamber 10 has a chamber, and the chamber 10 is provided with an ion source 20, a carrier 30, a first driving system 71, a second driving system 72, a third driving system 73 and a fourth driving system (not shown in the figure).

[0046] The ion source 20 and the carrier 30 are arranged along the first direction X; the carrier 30 includes a supporting assembly, which is used to carry and fix the workpiece 01.

[0047] The first driving system 71 is used to drive the ion source 20 to move along the first direction X, so that the ion source 20 is close to or away from the carrier 30 .

[0048] The second driving system 72 is used to drive the carrier 30 to move along the second direction Z, so that the relative position of the workpiece 01 carried on the carrier 30 and the ion source 20 in the second direction Z can be adjusted.

[0049] The third driving system 73 is used to drive the carrier 30 to rotate around the first axis R1, and the fourth driving system is used to drive the supporting assembly to rotate around the second axis R2.

[0050] The first direction X is perpendicular to the second direction Z, the first axis R1 is perpendicular to the first direction X and the second direction Z, and the second axis R2 is perpendicular to the bearing surface of the support assembly and is located at the center of the bearing surface.

[0051] It can be understood that the first axis R1 extends along the third direction Y, the third direction Y is perpendicular to the plane constructed by the first direction X and the second direction Z, the second direction Z is perpendicular to the plane constructed by the first direction X and the third direction Y, and the first direction X is perpendicular to the plane constructed by the second direction Z and the third direction Y.

[0052] It can also be understood that the extension direction of the second axis R2 is variable and is related to the position of the supporting platform 30 .

[0053] After the above arrangement, the ion source 20 is driven to move along the first direction X by the first driving system 71, so that the distance between the ion source 20 and the workpiece 01 carried on the stage 30 can be adjusted; the stage 30 is driven to rotate around the first axis R1 by the third driving system 73, so that the orientation of the bearing surface of the supporting assembly of the stage 30 can be changed, so as to facilitate the transfer of the workpiece 01 to the stage 30, or to take the workpiece 01 out of the stage 30, and at the same time, the stage 30 can be placed in a position where the bearing surface faces the ion source 20, so that the ion beam emitted by the ion source 20 can be irradiated on the surface to be processed of the workpiece 01; The second driving system 72 drives the carrier 30 to move along the second direction Z, and the radial position of the ion beam emitted by the ion source 20 on the workpiece 01 can be adjusted; the fourth driving system drives the support assembly to rotate around the second axis R2, so that the workpiece 01 fixed on the support assembly can also rotate around the second axis R2. When the workpiece 01 is placed on the bearing surface of the support assembly, the center of the workpiece 01 can coincide with the center of the bearing surface. Driven by the fourth driving system, the workpiece 01 can be rotated around its own axis, and the circumferential position of the ion beam emitted by the ion source 20 on the workpiece 01 can be adjusted.

[0054] When the working surface of the workpiece 01 is a plane, the ion beam emitted by the ion source 20 can be irradiated at any position on the working surface of the workpiece 01 through the cooperation of the second driving system 72 and the fourth driving system, so as to facilitate the local shaping or full-area shaping of the working surface of the workpiece 01.

[0055] When the working surface of the workpiece 01 is an external convex surface such as a hemispherical surface, the ion beam emitted by the ion source 20 can be irradiated at any position on the working surface of the workpiece 01 through the coordinated cooperation of the second drive system 72, the third drive system 73 and the fourth drive system, so as to facilitate the local shaping or full-area shaping of the working surface of the workpiece 01.

[0056] By adopting the above scheme, the ion beam shaping device adds a rotational degree of freedom of the supporting assembly of the carrier 30, so that the shaping operation on the workpiece 01 can be achieved with only the movement degrees of freedom in two directions. The movement degrees of freedom in the above two directions are the movement degrees of freedom in the first direction Z and the second direction Z. Compared with the traditional shaping device with three movement degrees of freedom, it is equivalent to omitting the movement degrees of freedom in the third direction Y, so that the size of the ion beam shaping device in the third direction Y can be reduced, which is beneficial to reducing the overall volume of the ion beam shaping device, thereby facilitating space utilization and reducing production costs.

[0057] In one embodiment, the first direction X extends along a first horizontal direction, the second direction Z extends along a vertical direction, and the third direction Y extends along a second horizontal direction, and the first horizontal direction and the second horizontal direction are perpendicular to each other. In this way, since the size of the ion beam shaping device in the third direction Y can be reduced, the area of ​​the ion beam shaping device on the horizontal plane constructed by the first direction X and the third direction Y can be reduced, that is, the floor space of the ion beam shaping device can be reduced. When the area of ​​the vacuum transfer platform is the same, it is beneficial to increase the number of chambers 10 that can be mounted on a single vacuum transfer platform, thereby saving production costs.

[0058] At this time, when the carrier 30 rotates around the first axis R1, it can be conveniently switched between a position where the carrier surface is parallel to the horizontal plane and a position where the carrier surface is parallel to the vertical plane, so as to facilitate the placement and removal of the workpiece 01.

[0059] The chamber 10 includes a first chamber wall 11 and a second chamber wall 12 opposite to each other, the ion source 20 is arranged near the first chamber wall 11, the stage 30 is arranged near the second chamber wall 12, and a transfer port 121 for taking and placing the workpiece 01 is provided on the second chamber wall 12. The chamber 10 also includes a door body (not shown in the figure), which can be used to open or close the transfer port 121.

[0060] The chamber of the chamber 10 needs to be a vacuum environment, and the ion beam shaping device can be provided with an exhaust system to evacuate the chamber of the chamber 10. The conveying device that conveys the workpiece 01 into the chamber 10 through the conveying port 121 or takes the workpiece 01 out of the chamber 10 is also in a vacuum environment.

[0061] The aforementioned transmission port 121 is opened on the second cavity wall 12, and a door body that can open and close the transmission port 121 is provided, so that the cavity 10 itself can form a relatively closed space, which is convenient for the exhaust system to maintain the vacuum degree of the chamber of the cavity 10 by exhausting air.

[0062] Please refer to Figures 3 to 5 , Figure 3 It is a schematic diagram of the structure in which the robot arm transfers the workpiece to the carrier in a specific embodiment; Figure 4 It is a structural diagram of a specific embodiment after the workpiece is fixed on the carrier; Figure 5 It is a simplified structural diagram of the ion beam shaping device when processing a workpiece in a specific embodiment.

[0063] In some embodiments, a robot arm 80 may be used to transfer the workpiece 01 .

[0064] like Figure 3As shown, the robot arm 80 can take the workpiece 01 from the front-end module of the equipment, and the workpiece 01 is transferred by the robot arm 80 to the transfer port 121 of the cavity 10 through the vacuum transfer module, and passes through the transfer port 121 into the cavity 10; before the robot arm 80 carries the workpiece 01 into the cavity 10, the third drive system 73 can be used to drive the carrier 30 to rotate around the first axis R1, so that the bearing surface of the carrier 30 is parallel to the bottom surface of the workpiece 01 when it is introduced. Exemplarily, when transferring the workpiece 01, the bottom surface of the workpiece 01 can be horizontal, and the bearing surface of the carrier 30 can be facing upward and in a position parallel to the horizontal plane. After the carrier 30 receives the workpiece 01, the robot arm 80 can withdraw from the cavity 10, as shown in FIG. Figure 4 shown.

[0065] Of course, when transferring the workpiece 01 to the cavity 10, the door body is opened. After the robot arm 80 completes the transfer and exits the cavity 10, the door body is closed to make the chamber inside the cavity 10 relatively closed. According to operational needs, the vacuum operation of the vacuum system can be used to make the cavity 10 in a vacuum environment that meets the processing requirements.

[0066] like Figure 5 As shown, when the workpiece 01 is subjected to a shaping treatment, the third driving system 73 is used to drive the carrier 30 to rotate around the first axis R1, so that the surface to be treated of the workpiece 01 supported and fixed on the carrier 30 faces the direction of the ion source 30, so that the ion beam emitted by the ion source 30 can be irradiated on the surface to be treated of the workpiece 01. According to the processing needs, the distance between the ion source 30 and the carrier 30 in the first direction X can be adjusted by the first driving system 71 to adjust the size of the beam spot 21 formed by the ion source 30 on the surface of the workpiece 01; the position of the workpiece 01 is changed by the cooperation of the second driving system 72 and the fourth driving system to adjust the position of the beam spot 21 on the surface of the workpiece 01, that is, to adjust the position of the shaping area.

[0067] In one embodiment, the first driving system 71 includes a first driving source (not shown in the figure), a first track 711 and a first slider 712, the first track 711 extends along the first direction X, and the first driving source can drive the first slider 712 to move relative to the first track 711. The ion source 20 is mounted on the first slider 712. In this way, when the first slider 712 moves along the first track 711, the ion source 20 can be driven to move along the first direction X together.

[0068] In one embodiment, the second driving system 72 includes a second driving source (not shown in the figure), a second track 721 and a second slider 722. The second track 721 extends along the second direction Z. The second driving source can drive the second slider 722 to move relative to the second track 721. The carrier 30 is mounted on the second slider 722. In this way, when the second slider 722 moves along the second track 721, it can drive the carrier 30 to move along the second direction Z together.

[0069] In a specific implementation, the ion beam shaping device further includes a beam blocker 50 , and the second driving system 72 is further used to drive the beam blocker 50 to move along the second direction so that the beam blocker 50 can be located within the irradiation range of the ion beam generated by the ion source 30 .

[0070] After the above arrangement, before processing the workpiece 01, the beam blocker 50 can be driven by the second driving system 72 to move to the position corresponding to the ion source 20, so that the ion beam just formed by the ion source 20 bombards the beam blocker 50, and after the ion beam is stable, the stage 30 is moved to align the workpiece 01 to be processed with the ion source 20. In this way, it can be avoided that the ion beam just formed by the ion source 20 is unstable and causes damage to the workpiece 01.

[0071] In the illustrated example, the beam blocker 50 and the carrier 30 are mounted on the same second slider 722, so that the relative position between the beam blocker 50 and the carrier 30 is fixed, and the relative position between the beam blocker 50 and the ion source 20, as well as the relative position between the carrier 30 and the ion source 20 can be positioned more accurately.

[0072] In other implementations, two second driving sources may be provided, two second sliders 722 may also be provided, the beam blocker 50 and the carrier 30 may be respectively installed on the two second sliders 722, and the two second driving sources can respectively drive the two second sliders 722 to move relative to the second track 721.

[0073] In a specific implementation, the beam blocker 50 can be fixedly connected to the second slider 722 via a connecting rod 60, so that the position of the beam blocker 50 in the third direction Y can be adjusted by setting the connecting rod 60, ensuring that the beam blocker 50 can move in the second direction Z to a position bombarded by the ion beam emitted by the ion source 20.

[0074] The first driving source of the first driving system 71 and the second driving source of the second driving system 72 can both be linear motors, or can be a motor and a transmission mechanism in combination, using the transmission mechanism to convert the rotational driving force of the motor into a linear displacement driving force. In addition, the first driving source and the second driving source can also be pneumatic or hydraulic in addition to the electric drive form.

[0075] In one embodiment, the third driving system 73 includes a third driving source 731, and the rotating output shaft of the third driving source 731 is transmission-connected to the carrier 30 to drive the carrier 30 to rotate around the first axis R1; the third driving source 731 is fixed on the second slider 722, that is, the carrier 30 is installed on the second slider 722 through the third driving source 731 to ensure that the carrier 30 can move along the second track 721 with the second slider 722, and can also rotate around the first axis R1.

[0076] Exemplarily, the third driving source 731 of the third driving system 73 may be a rotary servo motor.

[0077] In one embodiment, the fourth driving system includes a fourth driving source and a transmission assembly. The fourth driving source transmits a rotational driving force to a supporting assembly of the carrier 30 through the transmission assembly, so that the supporting assembly can drive the workpiece 01 to rotate around the second axis R2.

[0078] In a specific implementation, the fourth driving source may be a motor.

[0079] In a specific implementation, the transmission assembly can adopt a magnetic fluid shaft commonly used in the semiconductor field. Specifically, the transmission assembly includes a magnetic fluid shaft, and the magnetic fluid shaft includes an inner shaft, an outer shaft and a magnetic fluid, the outer shaft is outer-mounted on the inner shaft, and the magnetic fluid is arranged between the inner shaft and the outer shaft. The outer shaft can be assembled on the housing of the carrier 30, one end of the inner shaft is connected to the support assembly, and the other end of the inner shaft is connected to the fourth driving source. In this way, the fourth driving source can transmit the rotational driving force to the inner shaft, and when the inner shaft rotates, the support assembly is driven to rotate, thereby driving the workpiece 01 to rotate.

[0080] In a specific implementation, the workpiece 01 can be fixed on the support assembly by mechanical means, such as a mechanical pressure ring, or an ESC (Electro-Static Chuck) adsorption method. The specific structural settings of the mechanical pressure ring or ESC can refer to the settings of the stage-related equipment in the existing semiconductor field, which is not the core of this application and will not be repeated here.

[0081] It should be noted that all the aforementioned components disposed in the chamber of the cavity 10 need to be devices that can be used in a vacuum environment.

[0082] In this embodiment, the ion beam shaping device further includes a neutralizer 40 , which is used to generate an electron beam flow for neutralizing the ion beam flow generated by the ion source 20 .

[0083] In a specific implementation, the neutralizer 40 can be integrated with the ion source 20 , or installed on the inner wall of the chamber 10 , as long as it is ensured that the electron beam generated by the neutralizer 40 can neutralize the ion beam generated by the ion source 20 .

[0084] In a specific implementation, the ion source 20 may be a focused ion source, a planar ion source, or a divergent ion source. The type of the ion source 20 may be determined according to actual application requirements.

[0085] The following uses workpiece 01 as a wafer and the surface to be processed as a circular plane as an example to explain the processing path setting method of using ion beam shaping equipment to perform shaping treatment on the entire area of ​​the surface to be processed.

[0086] Combination Figure 5 and Figure 6 , the beam spot 21 formed by the ion source 20 can enter the position to be processed from any edge of the workpiece 01. The starting position is shown in the figure. After the beam spot 21 falls on the starting position, the fourth driving system can be used to drive the workpiece 01 to rotate around the second axis R2, that is, the workpiece 01 is driven to rotate, so as to achieve the shaping treatment on the circumference of the starting position, that is, to achieve the shaping treatment on a circle with a fixed radius; after completing the shaping treatment of a circle, the second driving system 72 can be used to drive the stage 30 to move in the second direction Z to change the radial position of the beam spot 21 on the processing surface of the workpiece 01, and then combined with the rotation of the workpiece 01, another circular shaping treatment is achieved, and this is repeated until all the shaping treatments of the surface to be processed of the workpiece 01 are completed. Figure 6 A processing path s1 under this method is shown in FIG.

[0087] Combination Figure 5 and Figure 7 , Figure 7 Another processing path s2 is shown, Figure 6 Compared with the Figure 7 In the processing method shown, the second drive system 72 does not move in stages, but drives the workpiece 01 to move in the second direction Z during the rotation of the workpiece 01, thereby forming Figure 7 The spiral machining path shown.

[0088] Combination Figure 5 and Figure 8 , Figure 8 Another processing path s3 is shown, Figure 6 and Figure 7 In comparison, Figure 8 In the processing method shown, the second drive system 72 keeps the stage 30 fixed in the second direction Z, and only the workpiece 01 rotates, thereby forming Figure 8 The local processing path shown is to perform shaping processing on the edge of the workpiece 01. In one application scenario, the workpiece 01 is a wafer. Figure 8 The processing method shown can shape the edge area of ​​the wafer, thereby increasing the effective utilization area of ​​the wafer. In the existing wafer processing process, the edge area will be discarded due to the uneven processing, which increases the production and processing cost. Figure 8 The solution shown performs a shaping process on the edge area of ​​the wafer, thereby making the edge area of ​​the wafer a usable area.

[0089] It should be pointed out that Figure 6 , Figure 7 and Figure 8 These are just three examples of processing paths. In actual applications, there may be many specific forms of processing paths, which can be determined in combination with actual needs.

[0090] Specific examples are used herein to illustrate the principles and implementation methods of the present application, and the description of the above embodiments is only used to help understand the method and core ideas of the present application. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

Claims

1. An ion beam shaping device, characterized in that: The invention comprises a cavity, wherein an ion source, a carrier, a first driving system, a second driving system, a third driving system and a fourth driving system are arranged in the cavity of the cavity; The ion source and the carrier are arranged along a first direction; the carrier includes a support assembly, and the support assembly is used to carry and fix the workpiece; The first driving system is used to drive the ion source to move along the first direction; the second driving system is used to drive the carrier to move along the second direction; the third driving system is used to drive the carrier to rotate around the first axis, and the fourth driving system is used to drive the support assembly to rotate around the second axis; The first direction is perpendicular to the second direction, the first axis is perpendicular to the first direction and perpendicular to the second direction; the second axis is perpendicular to the bearing surface of the support component and is located at the center of the bearing surface.

2. The ion beam shaping device according to claim 1, characterized in that: The first driving system includes a first driving source, a first track and a first slider, the first track extends along the first direction, and the first driving source can drive the first slider to move relative to the first track; The ion source is mounted on the first slider.

3. The ion beam shaping device according to claim 1, characterized in that: The second driving system includes a second driving source, a second track and a second slider, the second track extends along the second direction, and the second driving source can drive the second slider to move relative to the second track; the carrier is installed on the second slider.

4. The ion beam shaping device according to claim 3, characterized in that: The ion beam shaping device further includes a beam blocker, and the second driving system is further used to drive the beam blocker to move along the second direction so that the beam blocker can be located within the irradiation range of the ion beam generated by the ion source.

5. The ion beam shaping device according to claim 4, characterized in that: The beam blocker and the stage are mounted on the same second slider.

6. The ion beam shaping device according to claim 4, characterized in that: There are two second driving sources, there are two second sliders, and the beam blocker and the carrier are respectively mounted on the two second sliders; the two second driving sources can respectively drive the two second sliders to move relative to the second track.

7. The ion beam shaping device according to claim 5 or 6, characterized in that: The beam blocker is fixedly connected to the second sliding block via a connecting rod.

8. The ion beam shaping device according to claim 3, characterized in that: The third driving system includes a third driving source, a rotation output shaft of the third driving source is transmission-connected with the carrier to drive the carrier to rotate around the first axis; the third driving source is fixed on the second slider.

9. The ion beam shaping device according to claim 1, characterized in that: The fourth driving system includes a fourth driving source and a transmission assembly, and the fourth driving source transmits a rotational driving force to the supporting assembly through the transmission assembly.

10. The ion beam shaping device according to claim 9, characterized in that: The transmission assembly includes a magnetic fluid shaft, which includes an inner shaft, an outer shaft and a magnetic fluid, the outer shaft is externally mounted on the inner shaft, the magnetic fluid is arranged between the inner shaft and the outer shaft, the outer shaft is assembled on the housing of the carrier, one end of the inner shaft is connected to the support assembly, and the other end of the inner shaft is transmission-connected to the fourth driving source.

11. The ion beam shaping device according to any one of claims 1 to 6 and 8 to 10, characterized in that: The first direction is a first horizontal direction, the second direction is a vertical direction, and the first axis extends along a second horizontal direction perpendicular to the first horizontal direction.

12. The ion beam shaping device according to claim 11, characterized in that: The chamber includes a first chamber wall and a second chamber wall opposite to each other, the ion source is arranged close to the first chamber wall, the carrier is arranged close to the second chamber wall, and the second chamber wall has a transfer port for taking and placing the workpiece; the chamber also includes a door body, and the door body is used to open or close the transfer port.

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