Nondestructive test fixture for MOS (Metal Oxide Semiconductor) device for thermal resistance test

By designing a lossless test fixture for MOS devices, the problem of low thermal resistance testing efficiency of MOS devices in the prior art is solved, and batch rapid testing is achieved, cost is reduced, and the accuracy and convenience of testing are improved.

CN222580199UActive Publication Date: 2025-03-07BEIJING MICROELECTRONICS TECH INST +1
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Patent Information

Application Number
CN202420908095.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-04-28
Publication Date
2025-03-07
Estimated Expiration
2034-04-28

AI Technical Summary

Technical Problem

When testing the thermal resistance of MOS devices, the test efficiency is low and batch rapid testing cannot be carried out, which increases labor and time costs.

Method used

A lossless testing fixture for MOS devices for thermal resistance testing is designed, including test boards, wires, test seats and plug-ins. Thermal resistance testing is achieved through four-wire Kelvin connections, simplifying the testing process and avoiding re-welding during each test.

Benefits of technology

It improves the efficiency of thermal resistance testing of MOS devices, saves time and labor costs, realizes batch rapid testing, and enhances the accuracy and convenience of testing.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model belongs to the technical field of semiconductor device testing, particularly relates to an MOS device nondestructive testing clamp for thermal resistance testing, and aims to solve the problems that in the prior art, testing efficiency is low, batch rapid testing cannot be carried out, and labor and time cost is increased. The test board comprises a test board, a lead, a test seat and a power strip. The test board is electrically connected with one end of the wire, the other end of the wire is electrically connected with the test seat, and the test seat is used for connecting an MOS device to be tested; the test board is also provided with a plurality of power strips, and the power strips are used for supplementing circuit connection lines. The device is simple in structure, convenient to operate, good in test accuracy and high in efficiency, and saves time and labor cost.
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Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor device testing, and in particular relates to a non-destructive testing fixture for MOS devices used for thermal resistance testing. Background Art

[0002] MOS devices are a type of semiconductor discrete devices, including N-channel MOSFET and P-channel MOSFET. They are characterized by high reliability, long life, low loss, easy parallel connection and thermal stability, and are widely used in power switching circuits. The thermal performance of MOS devices has an important impact on their working reliability and service life, so the thermal resistance, an indicator for measuring thermal performance, has become an important parameter for device testing. However, the thermal resistance tester can only test the thermal performance of one device at a time. When testing a batch of devices, it is necessary to re-solder each time and even replace the socket and program. The test efficiency is low, and batch rapid testing cannot be performed, which greatly increases the labor and time costs.

[0003] Based on this, the utility model proposes a non-destructive testing fixture for MOS devices used for thermal resistance testing. Utility Model Content

[0004] In order to solve the above problems in the prior art, namely, the prior art has low test efficiency, cannot perform batch rapid testing, and increases labor and time costs, the utility model provides a MOS device non-destructive test fixture for thermal resistance testing, including a test board, a wire, a test socket and a strip;

[0005] The test board is electrically connected to one end of the wire, and the other end of the wire is electrically connected to a test socket, and the test socket is used to connect the MOS device to be tested;

[0006] The test board is also provided with a plurality of socket strips, which are used to supplement circuit connections.

[0007] In some preferred embodiments, the connection between the wire and the test socket is provided with an insulating protection sleeve.

[0008] In some preferred embodiments, the test board comprises a PCB test board.

[0009] In some preferred embodiments, the test socket comprises a dual in-line test socket.

[0010] In some preferred embodiments, at least three jacks are provided at one end of the test socket, into which the drain, source and gate of the MOS device to be tested are inserted respectively;

[0011] A metal pin is led out from the other end of the test socket, and the metal pin forms a four-wire Kelvin connection with the test board through a wire.

[0012] In some preferred embodiments, the conductor is a copper conductor with an outer ring wrapped in plastic, and the conductor is used to withstand a current of a preset magnitude.

[0013] In some preferred embodiments, the substrate of the test board includes an epoxy resin substrate.

[0014] In some preferred embodiments, the material of the test socket includes plastic and copper alloy.

[0015] Beneficial effects of the utility model:

[0016] Aiming at the problem that MOS devices cannot be tested in batches quickly, the utility model designs a special testing device to replace the existing single welding test, thereby improving the testing efficiency and saving time and labor costs;

[0017] The utility model can be used for the thermal resistance test of the junction shell and the junction environment, and can also be used for testing other types of discrete devices such as diodes, triodes, etc.;

[0018] The utility model has the advantages of simple structure, convenient operation, good test accuracy and high efficiency. The utility model avoids the need for re-soldering during each test, realizes non-destructive detection of components in thermal resistance test, improves test accuracy and convenience, and greatly improves test efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0020] Figure 1 It is a structural schematic diagram of a non-destructive test fixture of a MOS device for thermal resistance testing of the utility model;

[0021] Figure 2 It is a circuit schematic diagram of a MOS device thermal resistance test to be tested of a non-destructive test fixture for MOS devices for thermal resistance testing of the utility model;

[0022] Figure 3 The utility model discloses a schematic diagram of the size and pins of a MOS device to be tested in a nondestructive testing fixture of a MOS device for thermal resistance testing. DETAILED DESCRIPTION

[0023] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant utility model, rather than to limit the utility model. It is also necessary to explain that, for ease of description, only the parts related to the relevant utility model are shown in the accompanying drawings.

[0024] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0025] like Figure 1-Figure 3 As shown, see Figure 1 The utility model provides a non-destructive test fixture for MOS devices used for thermal resistance testing, comprising a test board 1, a wire 2, a test socket 4 and a socket 5;

[0026] The test board 1 is electrically connected to one end of a wire 2, and the other end of the wire 2 is electrically connected to a test socket 4, and the test socket 4 is used to connect a MOS device to be tested;

[0027] The test board 1 is also provided with a plurality of socket strips 5, and the socket strips 5 are used to supplement the circuit connection.

[0028] Among them, the wire 2 is a high current wire.

[0029] The two ends of the wire 2 are electrically connected to the test board 1 and the test socket 4 by welding.

[0030] Among them, see Figure 2 , Figure 2 This is the schematic diagram of the thermal resistance test circuit of the MOS device to be tested in this embodiment, which shows the specific four-wire Kelvin connection method when applying heating power in the thermal resistance test. The power supply is divided into three ports, voltage port, current port and ground. According to the Kelvin connection, the voltage port is divided into V_PORT and V_PORT SENSE, the current port is divided into I_PORT and I_PORT SENSE, and the ground is divided into POWER_GND and SENSE_GND. These six ports are the attached manual. Figure 1 The ports of socket 5 are shown here.

[0031] Instructions attached Figure 2 The test circuit connection is shown using an N-channel MOSFET working in the linear region as an example. The voltage ports V_PORT and V_PORT SENSE are connected to the drain D of the MOSFET, the current ports I_PORT and I_PORT SENSE are connected to the gate G through the protection resistor R1, and the ground POWER_GND and SENSE_GND are connected to the source S.

[0032] Resistor R2 and diode D1 are connected between the gate and the source. Resistor R2 and protection resistor R1 divide the voltage of the current port I_PORT. Resistor R1 is connected to the line where the source is located, so that the gate potential is higher than the source. Diode D1 prevents the current from reversing. Resistor R2 and diode D1 jointly ensure that the N-channel MOSFET is in the on state and works in the linear region. Capacitor C1 is connected between the gate and the source. Its function is to filter out the high-frequency AC signal of the DC power supply. The capacitor must be a non-polar capacitor and cannot be a tantalum capacitor or an electrolytic capacitor. The voltage port V_PORT applies a voltage between the drain and the source to turn on the MOSFET. The voltage port V_PORT SENSE detects the junction voltage between the drain and the source. The junction voltage is the temperature sensitive parameter TSP of the thermal resistance test.

[0033] The power application and detection voltage functions required for thermal resistance testing are achieved through the circuit connection on the test board and the socket strip.

[0034] For further explanation of the present invention, see Figure 1 The connection between the wire 2 and the test socket 4 is provided with an insulating protection 3 .

[0035] The insulation protection 3 is used to prevent circuit short circuit.

[0036] As a further explanation of the present invention, the test board 1 includes a PCB test board.

[0037] As a further explanation of the present invention, the test socket 4 comprises a dual in-line plug test socket.

[0038] As a further explanation of the present invention, one end of the test socket 4 is provided with at least three plug holes, into which the drain D, source S and gate G of the MOS device to be tested are inserted respectively;

[0039] A metal pin is led out from the other end of the test socket 4 , and the metal pin forms a four-wire Kelvin connection with the test board 1 through a wire 2 .

[0040] Specifically, in this embodiment, one end of the test socket 4 is provided with three jacks, into which the drain D, source S and gate G of the MOS device to be tested are inserted respectively;

[0041] The other end of the test socket 4 leads to six metal pins, which form a four-wire Kelvin connection with the test board 1 through the wire 2 to ensure the accuracy of the test. The test socket is strictly matched with the device, and plays the role of fixing the device and making electrical connection with the device.

[0042] The structure of the MOS device to be tested can be found in Figure 3 .

[0043] The test board 1 in the present invention is drawn according to the circuit connection requirements of the tester.

[0044] When the utility model is in use, in the junction-to-environment thermal resistance test, the test board 1 is inserted into the corresponding insertion slot of the thermal resistance tester with the front side facing upwards, and the test can be started after the air box door is closed. In the junction-to-shell thermal resistance test, the green extension strip also needs to be inserted into the corresponding slot, and the pressure head is used to make the bottom surface of the MOS device to be tested fit with the plane of the water cooling table.

[0045] Open the computer of the thermal resistance tester, select the corresponding test program, and click to start the test. When the device is tested, the tester computer controls the DC power supply to heat the device, then disconnects the heating power supply, uses the test board 1 to sense the voltage and current changes, and calculates the thermal resistance of the device. After the device reaches thermal equilibrium, the tester computer controls the DC power supply to turn off, the device gradually cools down, and the tester displays the thermal resistance test results on the computer, and the test ends.

[0046] As a further explanation of the present invention, the conductor 2 is a copper conductor with an outer ring wrapped with a plastic skin, and the conductor 2 is used to withstand a current of a preset magnitude.

[0047] In this embodiment, the diameter of the copper wire is set to 4 mm, and the maximum preset current is 60 amperes.

[0048] As a further explanation of the present invention, the substrate of the test board 1 includes an epoxy resin substrate, and the material of the test seat 4 includes plastic and copper alloy.

[0049] The terms "first", "second", etc. are used to distinguish similar objects rather than to describe or indicate a particular order or sequence.

[0050] The term "comprise" or any other similar term is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus / device that includes a list of elements includes not only those elements but also other elements not expressly listed, or also includes elements inherent to such process, method, article, or apparatus / device.

[0051] So far, the technical solution of the utility model has been described in conjunction with the preferred embodiments shown in the accompanying drawings, but it is easy for those skilled in the art to understand that the protection scope of the utility model is obviously not limited to these specific embodiments. Without departing from the principle of the utility model, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the utility model.

Claims

1. A non-destructive test fixture for MOS devices for thermal resistance testing, characterized in that: It comprises a test board (1), a wire (2), a test socket (4) and a socket (5); The test board (1) is electrically connected to one end of a wire (2), and the other end of the wire (2) is electrically connected to a test socket (4), and the test socket (4) is used to connect a MOS device to be tested; The test board (1) is also provided with a plurality of socket strips (5), and the socket strips (5) are used to supplement circuit connections.

2. A nondestructive test fixture for MOS devices for thermal resistance testing according to claim 1, characterized in that: The connection between the wire (2) and the test socket (4) is provided with an insulating protection (3).

3. A non-destructive test fixture for MOS devices for thermal resistance testing according to claim 1, characterized in that: The test board (1) comprises a PCB test board.

4. A non-destructive test fixture for MOS devices for thermal resistance testing according to claim 1, characterized in that: The test socket (4) comprises a dual in-line test socket.

5. A non-destructive test fixture for MOS devices for thermal resistance testing according to claim 4, characterized in that: One end of the test socket (4) is provided with at least three plug holes, into which the drain, source and gate of the MOS device to be tested are inserted respectively; A metal pin is led out from the other end of the test socket (4), and the metal pin forms a four-wire Kelvin connection with the test board (1) through a wire (2).

6. A non-destructive test fixture for MOS devices for thermal resistance testing according to claim 1, characterized in that: The conductor (2) is a copper conductor with an outer ring wrapped in plastic, and the conductor (2) is used to withstand a current of a preset magnitude.

7. A nondestructive test fixture for MOS devices for thermal resistance testing according to claim 1, characterized in that: The substrate of the test board (1) comprises an epoxy resin substrate.

8. A non-destructive test fixture for MOS devices for thermal resistance testing according to claim 1, characterized in that: The material of the test seat (4) includes plastic and copper alloy.