High-precision broadband temperature compensation attenuator
By using ceramic substrates, multiple electrode structures and thermistors in the temperature compensation attenuator, the shortcomings in the temperature compensation attenuator in the prior art in terms of temperature coefficient, environmental adaptability and reliability are solved, and high-precision wideband operation and adaptability in a variety of application scenarios are achieved.
Patent Information
- Application Number
- CN202421487134.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-27
- Publication Date
- 2025-03-21
- Estimated Expiration
- 2034-06-27
AI Technical Summary
The existing temperature compensation attenuators have shortcomings in temperature coefficient, environmental adaptability, dimensional design, debugging process and reliability, and it is difficult to meet the needs of different application needs and scenarios.
A high-precision wide-band temperature compensation attenuator is designed, using a ceramic substrate and a variety of electrode structures, combining thermistor and protective layer, increasing the electrode contact area through arcuate grooves and side electrodes, improving signal transmission efficiency and space utilization.
It realizes wide-band operation from DC to 20GHz, provides stable signal attenuation, ensures system reliability and stability, and provides a variety of attenuation quantities and temperature coefficient combinations, improving design flexibility and durability.
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Figure CN222654319U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the field of temperature compensation attenuator preparation, and in particular relates to a high-precision wide-band temperature compensation attenuator. Background Art
[0002] As a new type of microwave electronic component, the temperature compensated attenuator has been widely used in satellite communications, broadcast EW applications, high-frequency broadcast amplifiers and other products. It has the characteristics of excellent performance and high reliability, making it shine in the field of electronic components. However, there are still many areas for optimization and improvement in the temperature coefficient, environmental adaptability, size design, debugging process, reliability issues, etc. of the temperature compensated attenuator. Customized design according to the corresponding needs for different application requirements and application scenarios is the current mainstream development direction of temperature compensated attenuators. In systems such as microwave power amplifiers and low-noise amplifiers, if the system gain changes caused by temperature changes cannot be effectively handled, the performance of the entire system will be seriously affected. Utility Model Content
[0003] The utility model aims to overcome the shortcomings of the prior art and provide a high-precision wide-band temperature compensation attenuator.
[0004] The utility model adopts the following technical solutions:
[0005] A high-precision wide-band temperature compensation attenuator comprises a ceramic substrate, two middle electrodes arranged oppositely on the ceramic substrate, two side electrodes arranged oppositely on two side surfaces of the ceramic substrate, two surface electrodes arranged on the ceramic substrate and connected to the opposite side electrodes respectively on both sides of the two middle electrodes, a first thermistor connected between the two middle electrodes, two second thermistors respectively connected between the middle electrodes and the opposite side electrodes, and a back electrode arranged on the back of the ceramic substrate and connected to the two side electrodes, wherein the ceramic substrate comprises two arc grooves arranged oppositely on two side surfaces of the ceramic substrate, and the two side electrodes are respectively arranged in the two arc grooves.
[0006] Furthermore, the side electrode includes a main electrode arranged in the arc groove and two extended electrodes arranged on the side of the ceramic substrate and respectively connected to two ends of the main electrode.
[0007] Furthermore, the intermediate electrode includes a first connecting segment, a second connecting segment and a third connecting segment which are sequentially arranged outwardly, the length of the first connecting segment is greater than the length of the second connecting segment, and the length of the third connecting segment is less than the length of the second connecting segment.
[0008] Furthermore, the second thermistor is connected between the second connecting section and the relative surface electrode.
[0009] Furthermore, the two second thermistors are respectively arranged on two sides of the first thermistor.
[0010] Furthermore, it also includes a protective layer covering the first thermistor, the two second thermistors and the two surface electrodes, and two two ends of the protective layer are respectively formed with two concession grooves opposite to the two middle electrodes.
[0011] Furthermore, the distance between the two intermediate electrodes is 0.2±0.1 mm.
[0012] Furthermore, the thickness of the middle electrode is 18±6um, and the thickness of the surface electrode is 18±6um.
[0013] Furthermore, the ceramic substrate is an alumina ceramic substrate.
[0014] Furthermore, the second thermistor has a length of 0.44 mm and a width of 0.22 mm.
[0015] From the above description of the utility model, it can be seen that compared with the prior art, the beneficial effects of the utility model are: the high-precision wide-band temperature-compensated attenuator prepared in the present application supports broadband operation from DC to 20GHz. This feature ensures that the temperature-compensated attenuator can provide stable signal attenuation in different application scenarios, ensuring the reliability and stability of the system; at the same time, the temperature-compensated attenuator provides a variety of combinations of attenuation amounts and attenuation temperature coefficients, which will provide a high degree of flexibility for the design and can match the needs of various systems; among them, by setting an arc groove on the side of the ceramic substrate and cooperating with the side electrode to increase the contact area between the electrodes, the signal transmission efficiency is improved, the surface electrode and the back electrode are better connected, and the utilization of space can be improved, thereby enhancing the durability and reliability of electronic components. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 The structure diagram of the temperature compensation attenuator Figure 1 ;
[0017] Figure 2 The structure diagram of the temperature compensation attenuator Figure 2 ;
[0018] Figure 3 The structure diagram of the temperature compensation attenuator Figure 3 ;
[0019] In the figure, 1-ceramic substrate, 2-middle electrode, 3-side electrode, 4-surface electrode, 5-first thermistor, 6-second thermistor, 7-back electrode, 8-protective layer, 11-arc groove, 21-first connecting section, 22-second connecting section, 23-third connecting section, 31-main electrode, 32-extended electrode, 81-yield groove. DETAILED DESCRIPTION
[0020] The present invention is further described below through specific implementation methods.
[0021] Reference Figures 1 to 3 As shown, a high-precision wide-band temperature compensation attenuator includes a ceramic substrate 1, two middle electrodes 2 arranged oppositely on the ceramic substrate 1, two side electrodes 3 arranged oppositely on two sides of the ceramic substrate 1, two surface electrodes 4 arranged on the ceramic substrate 1 and respectively located on both sides of the two middle electrodes 2 and connected to the opposite side electrodes 3, a first thermistor 5 connected between the two middle electrodes 2, two second thermistors 6 respectively connected between the middle electrode 2 and the opposite side electrodes 3, a back electrode 7 arranged on the back of the ceramic substrate 1 and connected to the two side electrodes 3, and a protective layer 8 covering the first thermistor 5, the two second thermistors 6 and the two surface electrodes 4.
[0022] The ceramic substrate 1 is an alumina ceramic substrate and includes two arc-shaped grooves 11 arranged opposite to each other on two side surfaces of the ceramic substrate 1 .
[0023] The intermediate electrode 2 includes a first connecting segment 21, a second connecting segment 22 and a third connecting segment 23 which are sequentially arranged outward, wherein the length of the first connecting segment 21 is greater than the length of the second connecting segment 22, and the length of the third connecting segment 23 is less than the length of the second connecting segment 22; specifically, the intermediate electrode 2 adopts gold conductor slurry with a thickness of 18±6um; further, the spacing between the two intermediate electrodes 2 is 0.2±0.1mm.
[0024] The side electrode 3 includes a main electrode 31 arranged in the arc groove 11 and two extended electrodes 32 arranged on the side of the ceramic substrate 1 and connected to the two ends of the main electrode 31 respectively. Specifically, the side electrode 3 adopts thick film gold paste and is precisely coated using side end coating technology to ensure the uniformity of the end coating thickness.
[0025] The surface electrode 4 is made of gold conductor paste with a thickness of 18±6um.
[0026] The first thermistor 5 is made of a thick film thermistor paste with a positive temperature coefficient, and the resistance value is controlled at about 17.6Ω, wherein the thick film thermistor paste with a positive temperature coefficient refers to a positive temperature coefficient thermistor paste whose resistance increases with increasing temperature.
[0027] The second thermistor 6 is connected between the second connecting section 22 and the relative surface electrode 4, and its resistance is controlled at about 293Ω, and its length is 0.44mm and its width is 0.22mm; specifically, the two second thermistors 6 are staggered up and down and are respectively arranged on both sides of the first thermistor 5. Further, the second thermistor 5 adopts a thick film thermistor slurry with a negative temperature coefficient, wherein the thick film thermistor slurry with a negative temperature coefficient refers to a negative temperature coefficient thermistor slurry whose resistance decreases with increasing temperature.
[0028] The back electrode 7 uses thick film gold paste as the screen printing paste and adopts thick film printing technology to form the back electrode 7 on the back side of the ceramic substrate 1. Specifically, the thickness of the back electrode 7 should be controlled within the range of 16±6um; further, two back electrodes 7 are provided, and the two back electrodes 7 are spaced apart and arranged on the back side of the ceramic substrate 1 and are connected to the corresponding surface electrode 4 through the relative side electrodes 3; by limiting the setting of the back electrode 7, the prepared temperature compensation attenuator can be bonded by selecting a variety of bonding methods.
[0029] The protective layer 8 is an epoxy resin protective layer, which covers the surface electrode 4, the first thermistor 5 and the second thermistor 6 to prevent the resistance network from being affected by external humidity changes, oxidation and mechanical shock, thereby ensuring the normal use of the temperature compensation attenuator; specifically, two clearance grooves 81 opposite to the two middle electrodes 2 are formed at both ends of the protective layer 8.
[0030] In the above content, the resistance values of the first thermistor 5 and the first thermistor 6, and the thickness of the resistors and electrodes are described by taking a temperature compensation attenuator with an attenuation of 3 dB under the conditions of a frequency of 1 GHz and an ambient temperature of 25° C. as an example.
[0031] The high-precision broadband temperature-compensated attenuator prepared in the present application has an overall length of 1.78±0.12mm, a width of 1.52±0.12mm, and a thickness of 0.41±0.07mm; a nominal attenuation accuracy of 2-7dB; an attenuation accuracy of ±0.5dB; a standing wave ratio of ≤1.30 at an ambient temperature of 25°C and a frequency of 1GHz; a rated power of 0.2W; an attenuation temperature coefficient of -0.001 to -0.009dB / dB / °C; and supports broadband operation from DC to 20GHz. This feature ensures that the temperature-compensated attenuator can provide stable signal attenuation in different application scenarios. reduction, ensuring the reliability and stability of the system; at the same time, the temperature compensating attenuator provides a variety of attenuation and attenuation temperature coefficient combinations, which will provide a high degree of flexibility for the design and can match the needs of various systems; the product is designed using thick film process, which is a mature and stable process technology, which will make the temperature compensating attenuator have high reliability and durability; wherein, by setting an arc groove 11 on the side of the ceramic substrate 1, in conjunction with the side electrode 3, to increase the contact area between the electrodes, improve the signal transmission efficiency, better connect the surface electrode and the back electrode, but also improve the utilization of space, enhance the durability and reliability of electronic components.
[0032] The above description is only a preferred embodiment of the present invention, and therefore cannot be used to limit the scope of implementation of the present invention. That is, equivalent changes and modifications made according to the scope of application of the present invention and the contents of the specification should still fall within the scope covered by the present invention.
Claims
1. A high-precision broadband temperature compensation attenuator, characterized in that: The invention comprises a ceramic substrate, two middle electrodes arranged on the ceramic substrate opposite to each other, two side electrodes arranged on the two side surfaces of the ceramic substrate opposite to each other, two surface electrodes arranged on the ceramic substrate and connected to the opposite side electrodes respectively on both sides of the two middle electrodes, a first thermistor connected between the two middle electrodes, two second thermistors respectively connected between the middle electrodes and the opposite side electrodes, and a back electrode arranged on the back surface of the ceramic substrate and connected to the two side electrodes. The ceramic substrate comprises two arc grooves arranged on the two side surfaces of the ceramic substrate opposite to each other, and the two side electrodes are respectively arranged in the two arc grooves.
2. A high-precision broadband temperature compensation attenuator according to claim 1, characterized in that: The side electrodes include a main electrode arranged in the arc groove and two extension electrodes arranged on the side of the ceramic substrate and respectively connected to two ends of the main electrode.
3. The high-precision broadband temperature compensation attenuator according to claim 1, characterized in that: The intermediate electrode comprises a first connecting segment, a second connecting segment and a third connecting segment which are sequentially arranged outwardly, the length of the first connecting segment is greater than the length of the second connecting segment, and the length of the third connecting segment is less than the length of the second connecting segment.
4. A high-precision broadband temperature compensation attenuator according to claim 3, characterized in that: The second thermistor is connected between the second connecting section and the opposite surface electrode.
5. The high-precision broadband temperature compensation attenuator according to claim 1, characterized in that: The two second thermistors are respectively arranged on both sides of the first thermistor.
6. The high-precision broadband temperature compensation attenuator according to claim 1, characterized in that: It also includes a protective layer covering the first thermistor, the two second thermistors and the two surface electrodes, and two two ends of the protective layer are respectively formed with two accommodating grooves opposite to the two middle electrodes.
7. The high-precision broadband temperature compensation attenuator according to claim 1, characterized in that: The distance between the two middle electrodes is 0.2±0.1 mm.
8. The high-precision broadband temperature compensation attenuator according to claim 1, characterized in that: The thickness of the middle electrode is 18±6um, and the thickness of the surface electrode is 18±6um.
9. The high-precision broadband temperature compensation attenuator according to claim 1, characterized in that: The ceramic substrate is an alumina ceramic substrate.
10. The high-precision broadband temperature compensation attenuator according to claim 1, characterized in that: The second thermistor has a length of 0.44 mm and a width of 0.22 mm.