Semiconductor detection mechanism capable of generating magnetic field

Abstract

The utility model relates to a semiconductor detection mechanism capable of generating a magnetic field. The semiconductor detection mechanism comprises a sample table and an electromagnet assembly, the sample table is provided with a bearing surface, and the bearing surface is used for bearing a to-be-detected sample; the electromagnet assembly comprises a first electromagnet and a second electromagnet, the first electromagnet and the second electromagnet are arranged on the side, close to the bearing face, of the sample table in a spaced mode, and the first electromagnet and the second electromagnet are matched to be used for generating a magnetic field. The semiconductor detection mechanism can detect the performance of the to-be-detected sample in the magnetic field environment, the compatibility of the semiconductor detection mechanism to the to-be-detected samples of different sizes is high, and the size of the semiconductor detection mechanism is small.

Description

Technical Field

[0001] This application relates to the technical field of wafer testing, and particularly to a semiconductor testing mechanism capable of generating a magnetic field. Background Art

[0002] Wafer testing is an important part of the chip manufacturing industry and one of the main methods for calculating the yield rate of chips. With the increasingly diverse test environments and the wider compatibility requirements of customers, for example, some antenna products need to be tested in a magnetic field environment. Since the semiconductor testing mechanism needs to provide a controllable magnetic field required for testing, the sample stage is generally placed between two electromagnets. However, this setting method, on the one hand, limits the moving space of the sample stage by the electromagnets on both sides, thus restricting the size of the sample to be tested; on the other hand, in order to make the magnetic field generated between the two electromagnets cover the required magnetic field strength range for testing, it is necessary to increase the maximum magnetic field that the electromagnet can generate as much as possible. Therefore, the number of turns of the coil part of the electromagnet is relatively large, making the volume of the electromagnet relatively large, which is not conducive to the miniaturization of the volume of the semiconductor testing mechanism. Summary of the Utility Model

[0003] In view of this, this application provides a semiconductor testing mechanism capable of generating a magnetic field. The semiconductor testing mechanism can detect the performance of the sample to be tested in a magnetic field environment, has a high compatibility with samples to be tested of different sizes, and has a relatively small volume.

[0004] This application provides a semiconductor testing mechanism capable of generating a magnetic field. The semiconductor testing mechanism includes: a sample stage and an electromagnet assembly. The sample stage has a bearing surface for bearing the sample to be tested; the electromagnet assembly includes a first electromagnet and a second electromagnet. The first electromagnet and the second electromagnet are spaced apart on one side of the sample stage close to the bearing surface, and the first electromagnet and the second electromagnet cooperate to generate a magnetic field.

[0005] Further, the first electromagnet includes a first coil and a first magnet, the first coil is wound around the first magnet, the second electromagnet includes a second coil and a second magnet, and the second coil is wound around the second magnet; the electromagnet assembly further includes a yoke, and opposite ends of the yoke are respectively connected to the first magnet and the second magnet.

[0006] Further, the first magnet includes a first magnetic portion, a first column portion and a first magnetic pole portion, the first magnetic portion and the first magnetic pole portion are spaced apart, the first column portion is disposed between the first magnetic portion and the first magnetic pole portion and respectively connected to the first magnetic portion and the first magnetic pole portion, the first column portion is used to wind the first coil, and the first magnetic pole portion extends from an end of the first column portion away from the first magnetic portion toward a direction close to the second magnet; the second magnet includes a second magnetic portion, a second column portion and a second magnetic pole portion, the second magnetic portion and the second magnetic pole portion are spaced apart, the second column portion is disposed between the second magnetic portion and the second magnetic pole portion and respectively connected to the second magnetic portion and the second magnetic pole portion, the second column portion is used to wind the second coil, and the second magnetic pole portion extends from an end of the second column portion away from the second magnetic portion toward a direction close to the first magnet.

[0007] Furthermore, the range of the distance L1 between the bearing surface and the first magnetic pole portion is: 5mm≤L1≤30mm; the range of the distance L2 between the bearing surface and the second magnetic pole portion is: 5mm≤L2≤30mm.

[0008] Furthermore, a distance L3 between the first magnetic pole portion and the second magnetic pole portion is in the range of 10 mm ≤ L3 ≤ 50 mm.

[0009] Furthermore, the range of the magnetic field intensity H at the bearing surface is: 200Oe≤H≤2000Oe.

[0010] Furthermore, the first magnet also includes a third magnetic portion, which is arranged around the outer circumference of the first column portion, and the third magnetic portion is connected to the first magnetic portion in a bending manner; the second magnet also includes a fourth magnetic portion, which is arranged around the outer circumference of the second column portion, and the fourth magnetic portion is connected to the second magnetic portion in a bending manner.

[0011] Furthermore, the yoke has a first opening, and the semiconductor detection mechanism also includes a quick-plug interface and a controller, the quick-plug interface includes a main body, a first plug-in part and a second plug-in part, the main body closes the first opening, the first plug-in part is arranged on the surface of the yoke away from the sample stage, and the second plug-in part is arranged on the surface of the yoke facing the sample stage, the controller is plugged into the first plug-in part, the first coil and the second coil are electrically connected to the second plug-in part respectively, the controller is used to control the first coil and the second coil to start or stop powering on, and the controller can also control the power of the first coil and the second coil.

[0012] Further, the semiconductor detection mechanism further includes a displacement sensor. The yoke has a second opening, and the displacement sensor closes the second opening. The displacement sensor is used to detect the distance between the bearing surface and the yoke.

[0013] Further, the yoke further has a third opening, and the third opening is located between the first electromagnet and the second electromagnet; the semiconductor detection mechanism further includes a viewing window and a microscope. The viewing window closes the third opening, and the microscope is disposed on a side of the viewing window away from the bearing surface and is spaced apart from the viewing window. The microscope is used to observe the sample to be detected.

[0014] In the present application, the electromagnet assembly includes a first electromagnet and a second electromagnet. The first electromagnet and the second electromagnet are spaced apart on one side of the sample stage close to the bearing surface. The first electromagnet and the second electromagnet cooperate to generate a magnetic field. Then, the bearing surface of the sample stage is arranged on one side of the first electromagnet and the second electromagnet. When the bearing surface bears the sample to be detected and is located in the magnetic field generated by the first electromagnet and the second electromagnet, the semiconductor detection mechanism can be used to detect the performance of the sample to be detected in the magnetic field environment. If the sample stage is arranged between the first electromagnet and the second electromagnet, the magnetic field generated by the first electromagnet and the second electromagnet will cover the entire sample to be detected. Then, during the detection process of the sample to be detected, the movement of the sample stage is restricted by the first electromagnet and the second electromagnet. In the solution provided in the present application, the sample stage is arranged on one side of the first electromagnet and the second electromagnet. When the first electromagnet and the second electromagnet cooperate to generate a magnetic field, the sample stage can move towards the direction close to the first electromagnet and the second electromagnet, so that the bearing surface is located in the magnetic field generated by the first electromagnet and the second electromagnet. Further, the sample stage can move in a direction perpendicular to the arrangement direction of the electromagnet assembly and the sample stage, so that the area to be detected of the sample to be detected is located in the magnetic field. During the movement of the sample stage in the present application, it is not restricted by the first electromagnet and the second electromagnet. On the one hand, it can avoid the position of the first electromagnet and the second electromagnet restricting the size of the sample to be detected that can be detected, improving the compatibility of the semiconductor detection mechanism with samples to be detected of different sizes. On the other hand, compared with the solution of arranging the sample stage between the first electromagnet and the second electromagnet, in the semiconductor detection mechanism of the present application, the magnetic field intensity of the first electromagnet and the second electromagnet does not need to be too high, as long as it is ensured that the magnetic field intensity on the side of the first electromagnet and the second electromagnet close to the bearing surface meets the magnetic field intensity required for testing the sample to be detected. The magnetic field of the first electromagnet and the second electromagnet does not need to cover the entire sample to be detected, which is beneficial to realizing the miniaturized design of the first electromagnet and the second electromagnet, making the volume of the semiconductor detection mechanism smaller, and finally realizing the miniaturized design of the semiconductor detection mechanism. Description of the Drawings

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the implementation will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0016] Figure 1Schematic structural diagram of a semiconductor detection mechanism according to an embodiment of the present application;

[0017] Figure 2 Top view structural diagram of an electromagnet assembly according to an embodiment of the present application;

[0018] Figure 3 For the present application Figure 2 Schematic cross-sectional structure diagram along the A-A direction of the embodiment;

[0019] Figure 4 Side view of a semiconductor detection mechanism according to an embodiment of the present application;

[0020] Figure 5 Partial exploded structure diagram of a semiconductor detection mechanism according to an embodiment of the present application;

[0021] Figure 6 Partial exploded structure diagram of a semiconductor detection mechanism according to another embodiment of the present application;

[0022] Figure 7 Circuit block diagram of a semiconductor detection mechanism according to an embodiment of the present application;

[0023] Figure 8 Side view of a semiconductor detection mechanism according to another embodiment of the present application;

[0024] Figure 9 Schematic structural diagram of a probe assembly according to an embodiment of the present application;

[0025] Figure 10 Schematic structural diagram of a semiconductor detection mechanism according to another embodiment of the present application;

[0026] Figure 11 Circuit block diagram of a semiconductor detection mechanism according to another embodiment of the present application.

[0027] Explanation of reference numerals:

[0028] 100 - Semiconductor detection mechanism, 110 - Sample stage, 111 - Loading surface, 120 - Electromagnet assembly, 121 - First electromagnet, 1211 - First coil, 1212 - First magnet, 1213 - First magnetic part, 1214 - First cylindrical part, 1215 - First magnetic pole part, 1216 - Third magnetic part, 122 - Second electromagnet, 1221 - Second coil, 1222 - Second magnet, 1223 - Second magnetic part, 1224 - Second cylindrical part, 1225 - Second magnetic pole part, 1226 - Fourth magnetic part, 123 - Yoke iron, 1231 - First opening, 1232 - Second opening, 1233 - Third opening, 1234 - Fourth opening, 130 - Quick - connect interface, 131 - Body part, 132 - First plugging part, 133 - Second plugging part, 140 - Controller, 150 - Displacement sensor, 160 - Visual window, 170 - Microscope, 180 - Indicator light, 190 - Probe window, 191 - Mounting part, 192 - Puncturing part, 210 - Probe assembly, 211 - Probe holder, 212 - Probe arm, 213 - Probe, 220 - Box body, 221 - Base, 222 - Upper cover, 223 - Chamber, 230 - Compressed air dryer, 240 - Cooling part. Detailed implementation manners

[0029] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0030] The terms "first", "second", etc. in the specification and claims of the present application and the above - mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non - exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products or devices.

[0031] Referring to "embodiment" or "embodiment manner" herein means that a specific feature, structure or characteristic described in connection with the embodiment or embodiment manner may be included in at least one embodiment of the present application. The phrase appears in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0032] Wafer detection is an important part of the chip manufacturing industry and one of the main methods for calculating the chip yield rate. As the test environment becomes more and more diverse and the compatibility requirements of customers become wider, for example, some antenna products need to be tested in a magnetic field environment. Since semiconductor testing institutions need to provide a controllable magnetic field for testing, the sample stage is generally placed between two electromagnets. However, this setting method, on the one hand, limits the moving space of the sample stage by the two electromagnets on both sides, thus restricting the size of the sample to be detected; on the other hand, the magnetic field strength between the two electromagnets first decreases and then increases, that is, the magnetic field strength at the middle position between the two electromagnets is the smallest. During the detection process of the sample to be detected, the area to be detected of the sample to be detected needs to be moved to the middle position between the two electromagnets. Therefore, in order to make the area to be detected of the sample to be detected reach the required magnetic field strength and to make the magnetic field generated between the two electromagnets cover the range of magnetic field strength required for testing, it is necessary to increase the maximum magnetic field that the electromagnet can generate as much as possible. As a result, the number of turns of the coil part of the electromagnet is relatively large, making the volume of the electromagnet relatively large, which is not conducive to the miniaturization of the volume of the semiconductor testing institution.

[0033] Please refer to Figure 1 As shown in, the present application provides a semiconductor testing institution 100 capable of generating a magnetic field. The semiconductor testing institution 100 includes: a sample stage 110 and an electromagnet assembly 120. The sample stage 110 has a bearing surface 111 for bearing the sample to be detected; the electromagnet assembly 120 includes a first electromagnet 121 and a second electromagnet 122. The first electromagnet 121 and the second electromagnet 122 are arranged at intervals on one side of the sample stage 110 close to the bearing surface 111, and the first electromagnet 121 and the second electromagnet 122 cooperate to generate a magnetic field.

[0034] It can be understood that the sample stage 110 and the electromagnet assembly 120 are arranged in sequence and at intervals.

[0035] It can be understood that when the bearing surface 111 bears the sample to be detected and the bearing surface 111 is located in the magnetic field generated by the first electromagnet 121 and the second electromagnet 122, the semiconductor testing institution 100 can detect the performance of the sample to be detected in the magnetic field.

[0036] In this embodiment, the electromagnet assembly 120 includes a first electromagnet 121 and a second electromagnet 122. The first electromagnet 121 and the second electromagnet 122 are spaced apart on one side of the sample stage 110 close to the bearing surface 111. The first electromagnet 121 and the second electromagnet 122 cooperate to generate a magnetic field. Then, the bearing surface 111 of the sample stage 110 is arranged on one side of the first electromagnet 121 and the second electromagnet 122. When the bearing surface 111 carries the sample to be detected and is located in the magnetic field generated by the first electromagnet 121 and the second electromagnet 122, the semiconductor detection mechanism 100 can be used to detect the performance of the sample to be detected in the magnetic field environment. If the sample stage 110 is arranged between the first electromagnet 121 and the second electromagnet 122, the magnetic field generated by the first electromagnet 121 and the second electromagnet 122 will cover the entire sample to be detected. Then, during the detection process of the sample to be detected, the movement of the sample stage 110 is restricted by the first electromagnet 121 and the second electromagnet 122. In the solution provided in this embodiment, the sample stage 110 is arranged on one side of the first electromagnet 121 and the second electromagnet 122. When the first electromagnet 121 and the second electromagnet 122 cooperate to generate a magnetic field, the sample stage 110 can move towards the direction close to the first electromagnet 121 and the second electromagnet 122, so that the bearing surface 111 is located in the magnetic field generated by the first electromagnet 121 and the second electromagnet 122. Further, the sample stage 110 can move in a direction perpendicular to the arrangement direction of the electromagnet assembly 120 and the sample stage 110, so that the area to be detected of the sample to be detected is located in the magnetic field. During the movement of the sample stage 110 in this embodiment, it is not restricted by the first electromagnet 121 and the second electromagnet 122. On the one hand, it can avoid the position of the first electromagnet 121 and the second electromagnet 122 restricting the size of the sample to be detected that can be detected, and improve the compatibility of the semiconductor detection mechanism 100 with samples to be detected of different sizes. On the other hand, compared with the solution of arranging the sample stage 110 between the first electromagnet 121 and the second electromagnet 122, in the semiconductor detection mechanism 100 of this embodiment, the magnetic field intensity of the first electromagnet 121 and the second electromagnet 122 does not need to be too high, as long as it is ensured that the magnetic field intensity on the side of the first electromagnet 121 and the second electromagnet 122 close to the bearing surface 111 meets the magnetic field intensity required for testing the sample to be detected. The magnetic fields of the first electromagnet 121 and the second electromagnet 122 do not need to cover the entire sample to be detected, which is beneficial to realizing the miniaturized design of the first electromagnet 121 and the second electromagnet 122, making the volume of the semiconductor detection mechanism 100 smaller, and finally realizing the miniaturized design of the semiconductor detection mechanism 100.

[0037] Optionally, the sample to be detected is a wafer or a sub-chip to be detected. The wafer to be detected includes a plurality of sub-chips arranged in an array, and the sub-chips can be formed by cutting the wafer to be detected. In other words, the semiconductor detection mechanism 100 can detect the wafer to be detected and can also directly detect the sub-chips.

[0038] Optionally, the semiconductor detection mechanism 100 is compatible with wafers to be detected having sizes ranging from 2 inches to 12 inches. Specifically, the size of the wafer to be detected can be, but is not limited to, 2 inches, 2.5 inches, 3 inches, 3.8 inches, 4 inches, 4.6 inches, 5 inches, 5.6 inches, 6 inches, 6.5 inches, 7 inches, 7.5 inches, 8 inches, 8.5 inches, 9 inches, 9.5 inches, 10 inches, 11 inches, 12 inches, etc.

[0039] Optionally, the size of the sub-chips that the semiconductor detection mechanism 100 is compatible with can be, but is not limited to, 1 mm × 1 mm, 2 mm × 2 mm, 3 mm × 3 mm, 4 mm × 4 mm, 5 mm × 5 mm, 6 mm × 6 mm, 7 mm × 7 mm, 8 mm × 8 mm, 9 mm × 9 mm, 10 mm × 10 mm, 12 mm × 12 mm, 15 mm × 15 mm, 18 mm × 18 mm, 20 mm × 20 mm, etc. Herein, 1 mm × 1 mm means that the side lengths of the sub-chips are both 1 mm.

[0040] Please refer to Figure 2 and Figure 3 , in some embodiments, the first electromagnet 121 includes a first coil 1211 and a first magnet 1212, the first coil 1211 is wound around the first magnet 1212, the second electromagnet 122 includes a second coil 1221 and a second magnet 1222, and the second coil 1221 is wound around the second magnet 1222; the electromagnet assembly 120 further includes a yoke 123, and opposite ends of the yoke 123 are respectively connected to the first magnet 1212 and the second magnet 1222. Among them, Figure 3 Figure B shows a schematic diagram of the magnetic field generated by the cooperation of the first electromagnet 121 and the second electromagnet 122.

[0041] In this embodiment, the first electromagnet 121 includes a first coil 1211 and a first magnet 1212. The first coil 1211 is wound around the first magnet 1212. The second electromagnet 122 includes a second coil 1221 and a second magnet 1222. The second coil 1221 is wound around the second magnet 1222. By energizing the first coil 1211 and the second coil 1221, the first magnet 1212 and the second magnet 1222 cooperate to generate a magnetic field. Further, the electromagnet assembly 120 further includes a yoke 123. Opposite ends of the yoke 123 are respectively connected to the first magnet 1212 and the second magnet 1222. Then, the first magnet 1212, the yoke 123, and the second magnet 1222 are connected in sequence. When the first magnet 1212 and the second magnet 1222 cooperate to generate a magnetic field, a closed magnetic field loop can be generated inside the first magnet 1212, the yoke 123, and the second magnet 1222, which is beneficial to enhancing the magnetic field strength of the electromagnet assembly 120. When the bearing surface 111 is used to bear the sample to be detected and the bearing surface 111 is located in the magnetic field, the yoke 123 enhances the magnetic field generated by the cooperation of the first electromagnet 121 and the second electromagnet 122, so that the number of turns of the first coil 1211 wound around the first magnet 1212 and the number of turns of the second coil 1221 wound around the second magnet 1222 can be reduced to increase the magnetic field strength. Furthermore, the volumes of the first electromagnet 121 and the second electromagnet 122 are relatively small, which is beneficial to realizing the miniaturized design of the semiconductor detection mechanism 100.

[0042] Optionally, in some embodiments, the first magnet 1212 is an iron core, the second magnet 1222 is an iron core, and the yoke 123 is an iron core.

[0043] Optionally, the magnetic field strength generated by the first magnet 1212 can be controlled by the number of turns of the first coil 1211 wound around the first magnet 1212 and the power of the current passing through the first coil 1211. The magnetic field strength generated by the second magnet 1222 can be controlled by the number of turns of the second coil 1221 wound around the second magnet 1222 and the power of the current passing through the second coil 1221.

[0044] It can be understood that when opposite ends of the yoke 123 are respectively connected to the first magnet 1212 and the second magnet 1222, and the first coil 1211 and the second coil 1221 are energized, the polarity of the end of the first magnet 1212 close to the second magnet 1222 is opposite to the polarity of the end of the second magnet 1222 close to the first magnet 1212.

[0045] In some embodiments, the first magnet 1212 includes a first magnetic portion 1213, a first cylindrical portion 1214, and a first magnetic pole portion 1215. The first magnetic portion 1213 and the first magnetic pole portion 1215 are spaced apart. The first cylindrical portion 1214 is disposed between the first magnetic portion 1213 and the first magnetic pole portion 1215 and is connected to the first magnetic portion 1213 and the first magnetic pole portion 1215 respectively. The first cylindrical portion 1214 is for winding the first coil 1211. The first magnetic pole portion 1215 extends from the end of the first cylindrical portion 1214 facing away from the first magnetic portion 1213 towards the direction close to the second magnet 1222. The second magnet 1222 includes a second magnetic portion 1223, a second cylindrical portion 1224, and a second magnetic pole portion 1225. The second magnetic portion 1223 and the second magnetic pole portion 1225 are spaced apart. The second cylindrical portion 1224 is disposed between the second magnetic portion 1223 and the second magnetic pole portion 1225 and is connected to the second magnetic portion 1223 and the second magnetic pole portion 1225 respectively. The second cylindrical portion 1224 is for winding the second coil 1221. The second magnetic pole portion 1225 extends from the end of the second cylindrical portion 1224 facing away from the second magnetic portion 1223 towards the direction close to the first magnet 1212.

[0046] It can be understood that along the arrangement direction of the electromagnet assembly 120 and the sample stage 110, the first magnetic portion 1213, the first cylindrical portion 1214, and the first magnetic pole portion 1215 are arranged in sequence, and the second magnetic portion 1223, the second cylindrical portion 1224, and the second magnetic pole portion 1225 are arranged in sequence.

[0047] It can be understood that the first cylindrical portion 1214 and the first magnetic pole portion 1215 are bent and connected, and the first cylindrical portion 1214 and the first magnetic pole portion 1215 present an "L" shape; the second cylindrical portion 1224 and the second magnetic pole portion 1225 are bent and connected, and the second cylindrical portion 1224 and the second magnetic pole portion 1225 present an "L" shape.

[0048] It can be understood that the extending direction of the first magnetic pole portion 1215 is parallel to the direction in which the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are spaced apart, and the extending direction of the second magnetic pole portion 1225 is parallel to the direction in which the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are spaced apart.

[0049] It can be understood that the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are disposed opposite to each other.

[0050] In the first electromagnet 121 provided in this embodiment, the first magnetic part 1213, the first columnar part 1214, and the first magnetic pole part 1215 are arranged at intervals, which is conducive to making the magnetic field distribution formed by the first magnet 1212 more uniform and stable. Moreover, the first columnar part 1214 is located between the first magnetic part 1213 and the first magnetic pole part 1215, which is conducive to the winding of the first coil 1211 being tighter and more regular, and is conducive to improving the electromagnetic conversion efficiency of the first electromagnet 121. In addition, the first magnetic pole part 1215 extends from the end of the first columnar part 1214 facing away from the first magnetic part 1213 towards the direction close to the second magnet 1222, which is conducive to enhancing the magnetic field intensity of the first magnetic pole part 1215, so that the first electromagnet 121 has a stronger magnetic attraction in a specific direction. Similarly, in the second electromagnet 122, the second magnetic part 1223, the second columnar part 1224, and the second magnetic pole part 1225 are arranged at intervals, which is conducive to making the magnetic field distribution formed by the second magnet 1222 more uniform and stable. Moreover, the second columnar part 1224 is located between the second magnetic part 1223 and the second magnetic pole part 1225, which is conducive to the winding of the second coil 1221 being tighter and more regular, and is conducive to improving the electromagnetic conversion efficiency of the second electromagnet 122. In addition, the second magnetic pole part 1225 extends from the end of the second columnar part 1224 facing away from the second magnetic part 1223 towards the direction close to the first magnet 1212, which is conducive to enhancing the magnetic field intensity of the second magnetic pole part 1225, so that the second electromagnet 122 has a stronger magnetic attraction in a specific direction. When the first magnetic pole part 1215 and the second magnetic pole part 1225 are arranged oppositely, the magnetic field generated by the cooperation of the first electromagnet 121 and the second electromagnet 122 has a higher magnetic field intensity, which is convenient for the semiconductor detection mechanism 100 to detect the performance of the sample to be detected in the magnetic field.

[0051] It can be understood that when the opposite ends of the yoke 123 are respectively connected to the first magnet 1212 and the second magnet 1222, and the first coil 1211 and the second coil 1221 are energized, the polarity of the end of the first magnetic pole part 1215 close to the second magnetic pole part 1225 is opposite to the polarity of the end of the second magnetic pole part 1225 close to the first magnetic pole part 1215.

[0052] Optionally, in some embodiments, the polarity of the end of the first magnetic pole portion 1215 close to the second magnetic pole portion 1225 is N pole, and the polarity of the end of the second magnetic pole portion 1225 close to the first magnetic pole portion 1215 is S pole. In other embodiments, the polarity of the end of the first magnetic pole portion 1215 close to the second magnetic pole portion 1225 is S pole, and the polarity of the end of the second magnetic pole portion 1225 close to the first magnetic pole portion 1215 is N pole.

[0053] Please refer to Figure 4 , in some embodiments, the range of the distance L1 between the bearing surface 111 and the first magnetic pole portion 1215 is: 5mm ≤ L1 ≤ 30mm; the range of the distance L2 between the bearing surface 111 and the second magnetic pole portion 1225 is: 5mm ≤ L2 ≤ 30mm.

[0054] It can be understood that the distance between the bearing surface 111 and the first magnetic pole portion 1215 is the distance between the bearing surface 111 and the surface of the first magnetic pole portion 1215 facing the bearing surface 111; the distance between the bearing surface 111 and the second magnetic pole portion 1225 is the distance between the bearing surface 111 and the surface of the second magnetic pole portion 1225 facing the bearing surface 111.

[0055] Specifically, the value of the distance L1 between the bearing surface 111 and the first magnetic pole portion 1215 can be, but is not limited to, 5mm, 8mm, 10mm, 12mm, 15mm, 16mm, 18mm, 20mm, 22mm, 24mm, 25mm, 26mm, 28mm, and 30mm, etc.

[0056] Specifically, the value of the distance L2 between the bearing surface 111 and the second magnetic pole portion 1225 can be, but is not limited to, 5mm, 8mm, 10mm, 12mm, 15mm, 16mm, 18mm, 20mm, 22mm, 24mm, 25mm, 26mm, 28mm, and 30mm, etc.

[0057] In this embodiment, when the first electromagnet 121 and the second electromagnet 122 cooperate to generate a magnetic field, there is a magnetic field on the side of the first magnetic pole portion 1215 and the second magnetic pole portion 1225 facing the bearing surface 111. When the distance L1 between the bearing surface 111 and the first magnetic pole portion 1215 satisfies 5 mm ≤ L1 ≤ 30 mm and the distance L2 between the bearing surface 111 and the second magnetic pole portion 1225 satisfies the range 5 mm ≤ L2 ≤ 30 mm, the distances between the bearing surface 111 and the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are within a reasonable range, such that the sample to be detected located on the bearing surface 111 is in the magnetic field, and the performance of the sample to be detected in the magnetic field can be detected. In addition, when the distances between the bearing surface 111 and the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are within a reasonable range, the magnetic field at the height where the sample to be detected is located is relatively stable, which is beneficial to improving the accuracy of the semiconductor detection mechanism 100 for detecting the performance of the sample to be detected. When the distances between the bearing surface 111 and the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are too small, the magnetic field at the height where the sample to be detected carried by the bearing surface 111 is unstable, which is not conducive to detecting the performance of the sample to be detected in the magnetic field. When the distances between the bearing surface 111 and the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are too large, the magnetic field at the height where the sample to be detected carried by the bearing surface 111 is too small, making it difficult for the semiconductor detection mechanism 100 to detect the performance of the sample to be detected in the magnetic field.

[0058] It can be understood that the distance between the bearing surface 111 and the first magnetic pole portion 1215 is equal to the distance between the bearing surface 111 and the second magnetic pole portion 1225. In other words, the surface of the first magnetic pole portion 1215 facing the bearing surface 111 is flush with the surface of the second magnetic pole portion 1225 facing the bearing surface 111. Such a setting is beneficial to forming a stable magnetic field on the surface of the first magnetic pole portion 1215 facing the bearing surface 111 and the surface of the second magnetic pole portion 1225 facing the bearing surface 111, so as to facilitate detecting the performance of the sample to be detected in the magnetic field.

[0059] In some embodiments, the range of the distance L3 between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 is: 10 mm ≤ L3 ≤ 50 mm.

[0060] It can be understood that the distance between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 is the distance between the end of the first magnetic pole portion 1215 facing the second magnetic pole portion 1225 and the end of the second magnetic pole portion 1225 facing the first magnetic pole portion 1215.

[0061] Specifically, the value of the distance L3 between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 may be, but is not limited to, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, 32 mm, 35 mm, 38 mm, 40 mm, 42 mm, 44 mm, 45 mm, 46 mm, 48 mm, 50 mm, etc.

[0062] In this embodiment, when the distance L3 between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 satisfies the range 10 mm ≤ L3 ≤ 50 mm, the distance between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 is within a reasonable range, such that the magnetic field lines between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are distributed in a suitable space, and the uniformity of the magnetic field is relatively good. When the distance between the bearing surface 111 and the first magnetic pole portion 1215 and the distance between the bearing surface 111 and the second magnetic pole portion 1225 are within a reasonable range, on the one hand, it can ensure that the area to be detected of the bearing surface 111 is located in the magnetic field, and on the other hand, it can ensure that the magnetic field distribution on the bearing surface 111 is relatively stable, improving the accuracy of the semiconductor detection mechanism 100 for detecting the performance of the sample to be detected in the magnetic field. When the distance between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 is too large, the magnetic field lines between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are distributed in a larger space, but correspondingly, the uniformity of the magnetic field distribution is poor. When the distance between the bearing surface 111 and the first magnetic pole portion 1215 and the distance between the bearing surface 111 and the second magnetic pole portion 1225 are within a reasonable range, most of the area on the bearing surface 111 is located in the magnetic field, but the uniformity of the magnetic field distribution is poor, such that although the area to be detected of the sample to be detected is located in the magnetic field, the uniformity of the magnetic field distribution is poor, making it difficult to accurately detect the performance of the sample to be detected in the magnetic field. When the distance between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 is too small, the magnetic field lines between the first magnetic pole portion 1215 and the second magnetic pole portion 1225 are distributed in a smaller space. When the distance between the bearing surface 111 and the first magnetic pole portion 1215 and the distance between the bearing surface 111 and the second magnetic pole portion 1225 are within a reasonable range, only a small part of the area on the bearing surface 111 is located in the magnetic field. In other words, the area to be detected of the sample to be detected is not necessarily all in the magnetic field, making it difficult for the semiconductor detection mechanism 100 to accurately detect the performance of the sample to be detected in the magnetic field.

[0063] In some embodiments, the range of the magnetic field intensity H at the bearing surface 111 is: 200 Oe ≤ H ≤ 2000 Oe.

[0064] Specifically, the value of the magnetic field strength H at the bearing surface 111 can be, but is not limited to, 200 Oe, 250 Oe, 280 Oe, 300 Oe, 400 Oe, 450 Oe, 500 Oe, 650 Oe, 700 Oe, 800 Oe, 900 Oe, 1000 Oe, 1100 Oe, 1200 Oe, 1300 Oe, 1400 Oe, 1500 Oe, 1600 Oe, 1700 Oe, 1800 Oe, 1900 Oe, 2000 Oe, etc.

[0065] It can be understood that the magnetic field strength at the bearing surface 111 is the magnetic field strength at the position where the bearing surface 111 is located when the bearing surface 111 is in the magnetic field.

[0066] In this embodiment, when the magnetic field strength H at the bearing surface 111 satisfies the range 200 Oe ≤ H ≤ 2000 Oe, the magnetic field strength at the bearing surface 111 is within a reasonable range, so that the semiconductor detection mechanism 100 can detect the performance of the sample to be detected when the magnetic field strength H is 200 Oe ≤ H ≤ 2000 Oe. The range of the magnetic field strength is relatively large, which is beneficial to improving the applicable performance of the semiconductor detection mechanism 100.

[0067] In some embodiments, the first magnet 1212 further includes a third magnetic part 1216, the third magnetic part 1216 is disposed around the outer periphery of the first columnar part 1214, and the third magnetic part 1216 is bent and connected to the first magnetic part 1213; the second magnet 1222 further includes a fourth magnetic part 1226, the fourth magnetic part 1226 is disposed around the outer periphery of the second columnar part 1224, and the fourth magnetic part 1226 is bent and connected to the second magnetic part 1223.

[0068] In this embodiment, the third magnetic part 1216 is disposed around the outer periphery of the first columnar part 1214 and is bent and connected to the first magnetic part 1213. The bending connection between the third magnetic part 1216 and the first magnetic part 1213 is beneficial to combining to form a larger magnetic field, effectively concentrating the magnetic force lines, and increasing the magnetic field strength. Similarly, the fourth magnetic part 1226 is disposed around the outer periphery of the second columnar part 1224 and is bent and connected to the second magnetic part 1223. The bending connection between the fourth magnetic part 1226 and the second magnetic part 1223 is beneficial to combining to form a larger magnetic field, effectively concentrating the magnetic force lines, and increasing the magnetic field strength. The magnetic field generated by the mutual cooperation of the first electromagnet 121 and the second electromagnet 122 in this embodiment has a larger magnetic field strength and the magnetic field is more stable, which is beneficial to improving the accuracy of the semiconductor detection mechanism 100 in detecting the performance of the sample to be detected in the magnetic field.

[0069] Please refer to Figures 5 to 7 , in some embodiments, the yoke 123 has a first opening 1231, the semiconductor detection mechanism 100 further includes a quick plug interface 130 and a controller 140. The quick plug interface 130 includes a body portion 131, a first plugging portion 132, and a second plugging portion 133. The body portion 131 closes the first opening 1231. The first plugging portion 132 is disposed on the surface of the yoke 123 facing away from the sample stage 110, and the second plugging portion 133 is disposed on the surface of the yoke 123 facing the sample stage 110. The controller 140 is plugged into the first plugging portion 132. The first coil 1211 and the second coil 1221 are respectively electrically connected to the second plugging portion 133. The controller 140 is configured to control the first coil 1211 and the second coil 1221 to start or stop being energized, and the controller 140 can also control the energization power of the first coil 1211 and the second coil 1221.

[0070] It can be understood that the first plugging portion 132 and the second plugging portion 133 are located on opposite sides of the body portion 131.

[0071] In this embodiment, the controller 140 is electrically connected to the first plugging portion 132 from the surface of the yoke 123 facing away from the sample stage 110, and the first coil 1211 and the second coil 1221 are electrically connected to the second plugging portion 133 from the surface of the yoke 123 facing the sample stage 110, thereby realizing the electrical connection between the controller 140 and the first coil 1211 and the second coil 1221, so as to facilitate the controller 140 to control the first coil 1211 and the second coil 1221. In addition, the method of realizing the electrical connection between the controller 140 and the first coil 1211 and the second coil 1221 through the quick plug interface 130 is simple and efficient, can avoid complex wiring, and is beneficial to improving the assembly efficiency of the electromagnet assembly 120 and the controller 140 in the semiconductor detection mechanism 100. Specifically, when the controller 140 controls the first coil 1211 and the second coil 1221 to start energizing, current passes through the first coil 1211 and the second coil 1221, so that the first magnet 1212 and the second magnet 1222 are magnetized and generate a magnetic field. When the controller 140 controls the first coil 1211 and the second coil 1221 to stop energizing, there is no longer current passing through the first coil 1211 and the second coil 1221, and the magnetic fields of the first magnet 1212 and the second magnet 1222 disappear. Further, when the controller 140 controls the energization power of the first coil 1211 and the second coil 1221, the speed of the current flowing through the first coil 1211 and the second coil 1221 can be controlled, so as to realize the regulation of the magnetic field intensity generated by the first magnet 1212 and the second magnet 1222. In this embodiment, through the control of the first coil 1211 and the second coil 1221 by the controller 140, the regulation of the magnetic fields generated by the first electromagnet 121 and the second electromagnet 122 is realized, so as to improve the applicability of the semiconductor detection mechanism 100, so that the semiconductor detection mechanism 100 can detect the performance of different samples to be detected under different magnetic field intensities.

[0072] Optionally, the semiconductor detection mechanism 100 further includes an indicator light 180, and the indicator light 180 is electrically connected to the controller 140, the first coil 1211 and the second coil 1221 respectively. When the controller 140 controls the first coil 1211 and the second coil 1221 to be energized, the indicator light 180 is on; when the controller 140 controls the first coil 1211 and the second coil 1221 to stop energizing, the indicator light 180 is off. The indicator light 180 is used to indicate the working states of the first electromagnet 121 and the second electromagnet 122.

[0073] In some embodiments, the semiconductor detection mechanism 100 further includes a displacement sensor 150. The yoke 123 has a second opening 1232, and the displacement sensor 150 closes the second opening 1232. The displacement sensor 150 is used to detect the distance between the bearing surface 111 and the yoke 123.

[0074] Optionally, the displacement sensor 150 is an optical fiber sensor.

[0075] In this embodiment, the yoke 123 has a second opening 1232 and the displacement sensor 150 closes the second opening 1232. The displacement sensor 150 is used to detect the distance between the bearing surface 111 and the yoke 123. Then the displacement sensor 150 is arranged facing the sample stage 110. When the semiconductor detection mechanism 100 is used to detect a sample to be detected, by adjusting the distance between the bearing surface 111 and the first magnetic pole and the distance between the bearing surface 111 and the second magnetic pole, the sample to be detected is placed in the magnetic field formed by the first electromagnet 121 and the second electromagnet 122. The distance between the bearing surface 111 and the yoke 123 is detected by the displacement sensor 150. Further, when detecting other samples to be detected, the displacement sensor 150 can be used to adjust the distance between the bearing surface 111 and the yoke 123, so as to further adjust the distance between the bearing surface 111 and the first magnetic pole and the distance between the bearing surface 111 and the second magnetic pole, so that the sample to be detected can be quickly adjusted into the magnetic field formed by the first electromagnet 121 and the second electromagnet 122, which is beneficial to improving the detection efficiency of the semiconductor detection mechanism 100 for the sample to be detected.

[0076] Please refer to Figures 5 to 8 , in some embodiments, the yoke 123 further has a third opening 1233, and the third opening 1233 is located between the first electromagnet 121 and the second electromagnet 122; the semiconductor detection mechanism 100 further includes a viewing window 160 and a microscope 170. The viewing window 160 closes the third opening 1233, and the microscope 170 is arranged on the side of the viewing window 160 away from the bearing surface 111 and is spaced from the viewing window 160. The microscope 170 is used to observe the sample to be detected.

[0077] It can be understood that the orthographic projection of the microscope 170 on the surface of the yoke 123 away from the sample stage 110 at least partially falls within the viewing window 160.

[0078] It can be understood that the semiconductor detection mechanism 100 further includes a probe assembly 210, and the probe assembly 210 is used to detect the sample to be detected.

[0079] In this embodiment, the visual window 160 is located between the first electromagnet 121 and the second electromagnet 122. In other words, the visual window 160 is located in the middle of the first electromagnet 121 and the second electromagnet 122. When the microscope 170 is disposed on a side of the visual window 160 away from the bearing surface 111 and is spaced apart from the visual window 160, the microscope 170 can observe the sample to be detected through the visual window 160. By observing the contact situation between the probe assembly 210 and the sample to be detected, the probe assembly 210 can be controlled, and then the detection of the sample to be detected can be realized. It can be understood that when the sample to be detected is located on the sample stage 110, the area that the microscope 170 can observe is the area to be detected of the sample to be detected. At this time, the area to be detected of the sample to be detected is located in the magnetic field to detect the performance of the sample to be detected in the magnetic field. In addition, when placing the probe assembly 210, the visual window 160 can be taken out to facilitate directly seeing the situation on the surface of the sample to be detected with the naked eye, which is convenient for the staff to quickly locate the relative position between the probe assembly 210 and the sample to be detected. When the positions of the probe assembly 210 and the sample to be detected are roughly determined, the visual window 160 is covered on the third opening 1233 so that the microscope 170 can observe the relative position between the probe assembly 210 and the sample to be detected through the visual window 160. The visual window 160 can prevent the air flow on the side of the yoke 123 away from the sample stage 110 from entering the side of the yoke 123 facing the sample stage 110 through the third opening 1233, thereby ensuring the stability of the air flow on the side of the yoke 123 facing the sample stage 110 and avoiding the situation of the display screen shaking when observing the sample to be detected through the microscope 170, which is beneficial to improving the use performance of the semiconductor detection mechanism 100 when detecting the sample to be detected.

[0080] Optionally, the value range of the light transmittance α of the visual window 160 is: α≥95%. Specifically, the value of the light transmittance α of the visual window 160 can be, but is not limited to, 95%, 95.5%, 96%, 96.2%, 96.5%, 96.8%, 97%, 97.2%, 97.5%, 97.8%, 98%, 98.5%, 98.8%, 99%, 99.5% and 99.9%, etc. The higher the light transmittance of the visual window 160, the clearer the picture of the sample to be detected observed by the microscope 170 through the visual window 160.

[0081] Please refer to Figures 5 to 7 , and Figure 9, optionally, in some embodiments, the yoke 123 further has a plurality of fourth openings 1234, and the plurality of fourth openings 1234 are arranged around the third opening 1233; the semiconductor detection mechanism 100 further includes a plurality of probe windows 190 and a plurality of probe assemblies 210, the probe window 190 includes a mounting portion 191 and a puncturing portion 192, the mounting portion 191 is arranged around the outer periphery of the fourth opening 1234, and the puncturing portion 192 is connected to the mounting portion 191 to close the fourth opening 1234; the probe assembly 210 includes a probe base 211, a probe arm 212 and a probe 213 connected to each other, the probe base 211 is mounted on the surface of the yoke 123 facing away from the sample stage 110, the probe arm 212 partially extends into the side of the yoke 123 facing the sample stage 110 through the puncturing portion 192, and the probe 213 is located on the side of the yoke 123 facing the sample stage 110 and is used to detect the sample to be detected.

[0082] It can be understood that the probe arm 212 partially extends into the side of the yoke 123 facing the sample stage 110 through the puncturing portion 192, which can be that the probe arm 212 passes through the puncturing portion 192, and the probe arm 212 is partially located on the side of the yoke 123 facing away from the sample stage 110 and partially located on the side of the yoke 123 facing the sample stage 110.

[0083] In this embodiment, the plurality of fourth openings 1234 are arranged around the third opening 1233, then the plurality of probe assemblies 210 are arranged around the third opening 1233. When the probe arm 212 partially extends into the side of the yoke 123 facing the sample stage 110 through the puncturing portion 192, the probe 213 is located at the end of the probe arm 212 close to the sample stage 110 and is arranged adjacent to the sample to be detected. By moving the probe arm 212, the probe 213 is brought into contact with the sample to be detected, thereby realizing the detection of the sample to be detected. In this embodiment, the mounting portion 191 is arranged around the outer periphery of the fourth opening 1234, and the puncturing portion 192 is connected to the mounting portion 191 to close the fourth opening 1234. When the side of the yoke 123 facing the sample stage 110 is a closed space, the sealing performance of the side of the yoke 123 facing the sample stage 110 can be improved, thereby improving the detection performance of the semiconductor detection mechanism 100.

[0084] Please refer to Figure 10 and Figure 11, optionally, the semiconductor detection mechanism 100 further includes a box body 220, the box body 220 includes a connected base 221 and an upper cover 222, the base 221 and the upper cover 222 enclose a chamber 223; the electromagnet assembly 120 is installed on the upper cover 222, and the first magnetic pole portion 1215 and the second magnetic pole portion 1225 face the chamber 223, and the sample stage 110 is located in the chamber 223; the chamber 223 is a sealed chamber 223, and the semiconductor detection mechanism 100 further includes a compressed air dryer 230 and a cooling member 240, and the compressed air dryer 230 and the cooling member 240 are electrically connected; the compressed air dryer 230 communicates with the chamber 223 to blow dry air into the chamber 223; the cooling member 240 is used to cool the sample stage 110.

[0085] It can be understood that when it is necessary to detect the sample to be detected in a low-temperature magnetic field environment, if the temperature of the sample to be detected is directly reduced, frost will appear on the surface of the sample to be detected, which is not convenient for the probe 213 to contact the sample to be detected, and may damage the sample to be detected, and then the semiconductor detection mechanism 100 cannot test the performance of the sample to be detected in a low-temperature magnetic field environment. In this embodiment, the electromagnet assembly 120 is installed on the upper cover 222, and the sample stage 110 is located in the chamber 223. The chamber 223 is a sealed chamber 223. When it is necessary to detect the performance of the sample to be detected in a low-temperature magnetic field environment, the compressed air dryer 230 communicates with the chamber 223 and blows dry air into the chamber 223, which can reduce the humidity of the air in the chamber 223 to lower the dew point temperature in the chamber 223. Further, when the sample stage 110 is cooled by the cooling member 240, frosting on the surface of the sample to be detected and the tip of the probe 213 can be avoided, which is beneficial to the physical contact between the probe 213 and the sample to be detected, and then beneficial to realizing the detection of the sample to be detected by the probe assembly 210 and improving the detection performance of the wafer detection system. Further, in the electromagnet assembly 120 provided in this embodiment, the magnetic fields of the first electromagnet 121 and the second electromagnet 122 do not need to cover the entire sample to be detected. The electromagnet assembly 120 is located on one side of the sample stage 110 and will not interfere with the movement of the sample stage 110, facilitating the movement of the sample stage 110 so that all areas of the sample to be detected can enter the magnetic field range to realize the detection of all areas of the sample to be detected by the probe 213. In addition, it is beneficial to realize the miniaturization design of the electromagnet assembly 120, and it is also beneficial to realize the miniaturization design of the chamber 223 enclosed by the base 221 and the upper cover 222, and finally realize the miniaturization design of the semiconductor detection mechanism 100.

[0086] When the sample stage 110 is cooled by the cooling member 240, the temperature of the sample stage 110 is -60°C to 0°C. Specifically, the temperature of the sample stage 110 can be, but is not limited to, -60°C, -55°C, -50°C, -45°C, -40°C, -35°C, -30°C, -25°C, -20°C, -15°C, -10°C, -8°C, -5°C, and 0°C, etc.

[0087] In this application, the mention of "embodiment" and "implementation manner" means that the specific features, structures, or characteristics described in connection with the embodiment can be included in at least one embodiment of this application. The appearance of this phrase in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described in this application can be combined with other embodiments. In addition, it should also be understood that the features, structures, or characteristics described in each embodiment of this application can be combined arbitrarily without contradiction to form another embodiment that does not depart from the spirit and scope of the technical solution of this application.

[0088] Finally, it should be noted that the above implementation manners are only used to illustrate the technical solutions of this application and not to limit them. Although the technical solutions of this application have been described in detail with reference to the above preferred implementation manners, those of ordinary skill in the art should understand that the technical solutions of this application can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of this application.

Claims

1. A semiconductor detection mechanism capable of generating a magnetic field, characterized in that: The semiconductor detection mechanism comprises: A sample stage, wherein the sample stage has a carrying surface, and the carrying surface is used to carry a sample to be tested; The electromagnet assembly includes a first electromagnet and a second electromagnet. The first electromagnet and the second electromagnet are spaced apart on a side of the sample stage close to the carrying surface. The first electromagnet and the second electromagnet cooperate to generate a magnetic field.

2. The semiconductor detection mechanism according to claim 1, characterized in that: The first electromagnet includes a first coil and a first magnet, the first coil is wound around the first magnet, the second electromagnet includes a second coil and a second magnet, the second coil is wound around the second magnet; the electromagnet assembly also includes a yoke, the opposite ends of the yoke are respectively connected to the first magnet and the second magnet.

3. The semiconductor detection mechanism according to claim 2, characterized in that: The first magnet includes a first magnetic portion, a first column portion and a first magnetic pole portion, the first magnetic portion and the first magnetic pole portion are spaced apart, the first column portion is disposed between the first magnetic portion and the first magnetic pole portion and respectively connects the first magnetic portion and the first magnetic pole portion, the first column portion is used to wind the first coil, and the first magnetic pole portion extends from an end of the first column portion away from the first magnetic portion toward a direction close to the second magnet; the second magnet includes a second magnetic portion, a second column portion and a second magnetic pole portion, the second magnetic portion and the second magnetic pole portion are spaced apart, the second column portion is disposed between the second magnetic portion and the second magnetic pole portion and respectively connects the second magnetic portion and the second magnetic pole portion, the second column portion is used to wind the second coil, and the second magnetic pole portion extends from an end of the second column portion away from the second magnetic portion toward a direction close to the first magnet.

4. The semiconductor detection mechanism according to claim 3, characterized in that: The range of the distance L1 between the bearing surface and the first magnetic pole portion is: 5mm≤L1≤30mm; the range of the distance L2 between the bearing surface and the second magnetic pole portion is: 5mm≤L2≤30mm.

5. The semiconductor detection mechanism according to claim 3, characterized in that: The range of the distance L3 between the first magnetic pole portion and the second magnetic pole portion is: 10 mm≤L3≤50 mm.

6. The semiconductor detection mechanism according to claim 1, characterized in that: The range of the magnetic field intensity H at the bearing surface is: 200Oe≤H≤2000Oe.

7. The semiconductor detection mechanism according to claim 3, characterized in that: The first magnet also includes a third magnetic portion, which is arranged around the outer circumference of the first column portion, and the third magnetic portion is connected to the first magnetic portion in a bending manner; the second magnet also includes a fourth magnetic portion, which is arranged around the outer circumference of the second column portion, and the fourth magnetic portion is connected to the second magnetic portion in a bending manner.

8. The semiconductor detection mechanism according to claim 2, characterized in that: The yoke has a first opening, and the semiconductor detection mechanism also includes a quick-plug interface and a controller. The quick-plug interface includes a main body, a first plug-in part and a second plug-in part. The main body closes the first opening. The first plug-in part is arranged on the surface of the yoke away from the sample stage, and the second plug-in part is arranged on the surface of the yoke facing the sample stage. The controller is plugged into the first plug-in part, and the first coil and the second coil are electrically connected to the second plug-in part respectively. The controller is used to control the first coil and the second coil to start or stop powering on. The controller can also control the power of the first coil and the second coil.

9. The semiconductor detection mechanism according to claim 2, characterized in that: The semiconductor detection mechanism further includes a displacement sensor, the yoke has a second opening, the displacement sensor closes the second opening, and the displacement sensor is used to detect the distance between the bearing surface and the yoke.

10. The semiconductor testing mechanism according to claim 2, characterized in that: The yoke also has a third opening, which is located between the first electromagnet and the second electromagnet; the semiconductor detection mechanism also includes a visual window and a microscope, the visual window closes the third opening, the microscope is arranged on the side of the visual window away from the supporting surface and is spaced apart from the visual window, and the microscope is used to observe the sample to be detected.

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