CSP light source

Abstract

The utility model discloses a CSP light source which comprises a semiconductor light-emitting chip, an insulating layer and a light-transmitting layer. The semiconductor light-emitting chip comprises a substrate, a semiconductor light-emitting laminated layer arranged on the substrate, a heat-conducting bonding pad and a bonding pad assembly, wherein the heat-conducting bonding pad and the bonding pad assembly are arranged on the semiconductor light-emitting laminated layer; the heat-conducting bonding pad is insulated from the bonding pad assembly; the insulating layer is arranged on the outer side of the semiconductor light-emitting chip in a surrounding mode, and the light-transmitting layer is arranged on the light-emitting face of the semiconductor light-emitting chip. According to the utility model, the semiconductor light-emitting chip is provided with the heat-conducting bonding pad, so that the semiconductor light-emitting chip can be directly connected with the substrate in a heat-conducting manner, heat generated during high-power working can be conducted to the substrate in time, the maximum working power of the semiconductor light-emitting chip is improved, and the reliability is high; the structure is simple, the manufacturing process can be simplified, and the cost is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor light emitting, especially to a CSP light source. BACKGROUND

[0002] With the improvement of luminous efficiency and the reduction of manufacturing cost, semiconductor light emitting devices have been widely used in backlight, display and lighting fields. The semiconductor light emitting devices include various types such as LED, COB, module, lamp panel and lamp strip. The common CSP LED light source structure is shown in Figure 1 which includes a semiconductor light emitting chip 11, an insulating layer 12 and a fluorescent powder glue layer 13. The semiconductor light emitting chip 11 includes a substrate 111, a semiconductor light emitting stack 112, a first pad 113 and a second pad 114 which are conductively connected with the outside. When the CSP LED light source is directly welded to the circuit board, the first pad 113 and the second pad 114 of the semiconductor light emitting chip 11 are respectively conductively connected with the corresponding first pad and second pad arranged on the circuit board.

[0003] Under the condition of high power work, the commonly used FR4-based circuit board cannot meet the heat conduction requirement, so the circuit board usually adopts a metal-based circuit board such as a copper-clad copper substrate. In order to insulate the first pad and the second pad arranged on the copper substrate from the copper substrate, an insulating layer must be added between the first pad and the second pad and the copper substrate. The insulating layer usually adopts resin, which has very poor heat conduction performance, so that the heat generated by the semiconductor light emitting chip under high power work cannot be conducted to the copper substrate, limiting the maximum workable power of the semiconductor light emitting chip.

[0004] Therefore, due to the essential defects and deficiencies of the above-mentioned CSP LED light source structure, the problem of realizing high power, high heat conduction and high reliability of the CSP light source cannot be solved. INVENTION CONTENTS

[0005] The technical problem to be solved by the utility model is to provide an improved CSP light source.

[0006] The technical scheme adopted by the utility model to solve the technical problem is: a CSP light source is provided, which includes a semiconductor light emitting chip, an insulating layer and a light-transmitting layer. The semiconductor light emitting chip includes a substrate, a semiconductor light emitting stack arranged on the substrate, a heat-conducting pad arranged on the semiconductor light emitting stack and a pad assembly.

[0007] The heat-conducting pad and the pad assembly are insulated. The insulating layer is arranged around the outside of the semiconductor light emitting chip, and the light-transmitting layer is arranged on the light-emitting surface of the semiconductor light emitting chip.

[0008] In some embodiments, the light-transmitting layer is also arranged on part or all of the insulating layer.

[0009] In some embodiments, the CSP light source further comprises a reflective layer, which is arranged between the insulating layer and the side surface of the semiconductor light emitting chip.

[0010] In some embodiments, the CSP light source further comprises a transparent filling layer, which is arranged between the reflective layer and the side surface of the semiconductor light emitting chip.

[0011] In some embodiments, the pad assembly comprises a first pad and a second pad.

[0012] In some embodiments, the semiconductor light emitting chip further comprises a first pad extension layer and a second pad extension layer; the first pad extension layer is located on the surface of the insulating layer and connected with the first pad, and the second pad extension layer is located on the surface of the insulating layer and connected with the second pad.

[0013] In some embodiments, the light-transmitting layer is a thin layer of silica gel, a thin layer of epoxy resin or a light-transmitting sheet, and the light-transmitting sheet is glass or ceramic.

[0014] In some embodiments, the light-transmitting layer is a light-transmitting layer doped with photoluminescence powder.

[0015] The utility model provides another CSP light source, including semiconductor light emitting chip and light-transmitting layer, the semiconductor light emitting chip includes substrate, sets up on the substrate semiconductor light emitting laminate, sets up on the semiconductor light emitting laminate heat conduction pad and pad assembly,

[0016] The heat conduction pad and the pad assembly are insulated; the light-transmitting layer is covered on the light emitting surface and the side surface of the semiconductor light emitting chip.

[0017] In some embodiments, the light-transmitting layer is a thin layer of silica gel or a thin layer of epoxy resin.

[0018] In some embodiments, the light-transmitting layer is a light-transmitting layer doped with photoluminescence powder.

[0019] The utility model discloses a CSP light source, which comprises a semiconductor light emitting chip and a light-transmitting layer. BRIEF DESCRIPTION OF DRAWINGS

[0020] The utility model will be described further below in combination with the drawings and embodiments, and the drawings are as follows:

[0021] Figure 1 It is the structure schematic diagram of prior art CSP LED light source.

[0022] Figure 2 is a structure diagram of a CSP light source of a first embodiment of the utility model;

[0023] Figure 3 is a structure diagram of a CSP light source of a second embodiment of the utility model;

[0024] Figure 4 is a structure diagram of a CSP light source of a third embodiment of the utility model. DETAILED DESCRIPTION

[0025] In order to have more clear understanding of the technical features, objects and effects of the utility model, the specific embodiments of the utility model will be explained in detail with reference to the drawings.

[0026] As Figures 2-4 shown, the CSP light source of the utility model includes a semiconductor light emitting chip 20. The semiconductor light emitting chip 20 includes a substrate 21, a semiconductor light emitting stack 22 arranged on the substrate 21, a heat conduction pad 23 and a pad assembly arranged on the semiconductor light emitting stack 22.

[0027] Among them, the substrate 21 has opposite first surface and second surface. The semiconductor light emitting stack 22 is arranged on the second surface of the substrate 21, and the first surface of the substrate 21 forms the light emitting surface of the semiconductor light emitting stack 22. The heat conduction pad 23 and the pad assembly are both arranged on the surface of the semiconductor light emitting stack 22 away from the substrate 21.

[0028] The pad assembly further includes a first pad 24 and a second pad 25, and the first pad 24 and the second pad 25 are arranged corresponding to the positive and negative poles respectively. The heat conduction pad 23 and the pad assembly are insulated; the CSP light source is installed on a substrate (such as a metal substrate) when in use, and the heat conduction pad 23 is used for direct heat conduction connection with the substrate, which can conduct the heat generated by the semiconductor light emitting chip 20 to the substrate in time when working at high power, and improve the maximum working power of the semiconductor light emitting chip 20.

[0029] Alternatively, on the surface of the semiconductor light emitting stack 22, the heat conduction pad 23 is located between the first pad 24 and the second pad 25 and is spaced apart from the first pad 24 and the second pad 25 respectively; the first pad 24 and the second pad 25 can also be arranged on the same side, and the heat conduction pad 23 is arranged on the other side (not shown in the figure).

[0030] In some embodiments, as Figure 2 and Figure 3 shown, the CSP light source further includes an insulating layer 30 and a light-transmitting layer 40.

[0031] An insulating layer 30 is disposed around the outer side (side) of the semiconductor light-emitting chip 20, which not only protects the side of the semiconductor light-emitting chip 20, but also effectively reduces light scattering caused by side light emission. The insulating layer 30 may be made of, but is not limited to, white glue or black glue.

[0032] The light-transmitting layer 40 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20, specifically on the first surface of the substrate 21. The light-transmitting layer 40 serves to transmit light and provide protection. If necessary, the light-transmitting layer 40 may also extend from the first surface of the substrate 21 to the surface of the insulating layer 30, covering part or all of the insulating layer 30.

[0033] Regarding the materials used, the light-transmitting layer 40 may be, but is not limited to, a thin layer of silicone or a thin layer of epoxy resin. The light-transmitting layer 40 may further be colorless and transparent, or may be doped with at least one photoluminescent powder, or may be doped with one or more combinations of light-diffusing powder, coloring powder, and anti-settling agent.

[0034] The photoluminescent powder is a phosphor and / or quantum dot. The phosphor includes, but is not limited to, one or more of YAG phosphor, oxide phosphor, nitride phosphor, fluoride phosphor, aluminate phosphor, silicate phosphor, and oxynitride phosphor. The quantum dot includes, but is not limited to, one or more of silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, and indium arsenide quantum dots. The light-diffusing powder includes, but is not limited to, one or more of glass powder, ceramic powder, oxide powder, and nitride powder with micron, submicron, and nano-sized particles. The coloring powder includes, but is not limited to, one or more of carbon black, oxide powder, and salts with micron, submicron, and nano-sized particles.

[0035] The light-transmitting layer 40 can also be a light-transmitting sheet, and further can be a glass sheet or a ceramic sheet. The glass sheet or ceramic sheet can also be doped with at least one photoluminescent powder.

[0036] exist Figure 2 In the embodiment shown, the insulating layer 30 is directly attached to the outer peripheral side of the semiconductor light-emitting chip 20.

[0037] exist Figure 3 In the illustrated embodiment, the CSP light source further includes a reflective layer 50. The reflective layer 50 is disposed between the insulating layer 30 and the side of the semiconductor light-emitting chip 20. The reflective layer 50 can reflect light incident on the insulating layer 30, reducing light loss caused by light absorption by the insulating layer 30 and effectively improving luminous efficiency.

[0038] Furthermore, the CSP light source also includes a transparent filler layer 60, which is disposed between the reflective layer 50 and the side of the semiconductor light-emitting chip 20.

[0039] Preferably, the reflective layer 50 is arranged obliquely relative to the side surface of the semiconductor light emitting chip 20, such that the surface of the reflective layer 50 facing the semiconductor light emitting chip 20 is obliquely facing the light emitting surface of the semiconductor light emitting chip 20, so that the reflective layer 50 can reflect light towards the light emitting surface.

[0040] To match the oblique arrangement of the reflective layer 50, the surface of the insulating layer 30 facing the semiconductor light emitting chip 20 is also arranged obliquely. The gap between the reflective layer 50 and the side surface of the semiconductor light emitting chip 20 is filled by the transparent filling layer 60.

[0041] Further optionally, the CSP light source further comprises a first pad extension layer 241 and a second pad extension layer 251. The first pad extension layer 241 is located on the same side of the semiconductor light emitting chip 20 as the first pad 24, and is arranged on the surface of the insulating layer 30 and connected with the first pad 24, thereby increasing the soldering area of the first pad 24 and improving the soldering yield and reliability. The second pad extension layer 251 is located on the same side of the semiconductor light emitting chip 20 as the second pad 25, and is arranged on the surface of the insulating layer 30 and connected with the second pad 25, thereby increasing the soldering area of the second pad 25 and improving the soldering yield and reliability.

[0042] It can be understood that the first pad extension layer 241 can be formed by extending the first pad 24 to the surface of the insulating layer 30, and the second pad extension layer 251 can be formed by extending the second pad 25 to the surface of the insulating layer 30.

[0043] In some embodiments, as shown in FIG. 1C, the CSP light source further comprises a light-transmitting layer 40. The light-transmitting layer 40 is arranged on the semiconductor light emitting chip 20, and the semiconductor light emitting chip 20 serves as a light-transmitting and protective function. Figure 4 Unlike the embodiments shown in FIGS. 1A and 1B, the light-transmitting layer 40 of the embodiment shown in FIG. 1C is arranged on the light emitting surface and the side surface of the semiconductor light emitting chip 20, and both the light emitting surface and the side surface of the semiconductor light emitting chip 20 can emit light. Figure 2 Figure 3 Figure 4

[0044] The light-transmitting layer 40 can be, but is not limited to, a thin layer of silicone or a thin layer of epoxy resin. The light-transmitting layer 40 can further be colorless and transparent, or can be doped with at least one photoluminescent powder, and can also be doped with one or more combinations of light diffusion powder, coloring powder, and anti-settling agent.

[0045] ​​​The photoluminescence powder is one or more of YAG fluorescent powder, oxide fluorescent powder, nitride fluorescent powder, fluoride fluorescent powder, aluminate fluorescent powder, silicate fluorescent powder, and oxynitride fluorescent powder.

[0046] The CSP light source is directly attached for use, that is, one side of the semiconductor light emitting chip 20 provided with the heat-conducting pad 23 is directly attached to the substrate, and the first pad 24 and the second pad 25 are respectively conductively connected to the corresponding pads on the substrate.

[0047] The CSP light source has a simple structure, and can simplify the manufacturing process and reduce the cost.

[0048] The above description is only an embodiment of the utility model, and does not limit the patent range of the utility model, and any equivalent structure or equivalent process conversion, or direct or indirect application in other related technical fields, is also included in the patent protection range of the utility model.

Claims

1. A CSP light source, characterized in that, It includes a semiconductor light-emitting chip, an insulating layer, and a light-transmitting layer; the semiconductor light-emitting chip includes a substrate, a semiconductor light-emitting stack disposed on the substrate, thermally conductive pads and pad assemblies disposed on the semiconductor light-emitting stack; The thermally conductive pads and the pad assembly are insulated from each other; the insulating layer surrounds the outside of the semiconductor light-emitting chip, and the light-transmitting layer is disposed on the light-emitting surface of the semiconductor light-emitting chip.

2. The CSP light source according to claim 1, characterized in that, The light-transmitting layer is also disposed on part or all of the insulating layer.

3. The CSP light source according to claim 1, characterized in that, The CSP light source also includes a reflective layer disposed between the insulating layer and the side of the semiconductor light-emitting chip.

4. The CSP light source according to claim 3, characterized in that, The CSP light source further includes a transparent filling layer, which is disposed between the reflective layer and the side of the semiconductor light-emitting chip.

5. The CSP light source according to any one of claims 1-4, characterized in that, The pad assembly includes a first pad and a second pad; The semiconductor light-emitting chip further includes a first pad extension layer and a second pad extension layer; the first pad extension layer is located on the surface of the insulating layer and connected to the first pad, and the second pad extension layer is located on the surface of the insulating layer and connected to the second pad.

6. The CSP light source according to any one of claims 1-4, characterized in that, The light-transmitting layer is a thin layer of silicone, a thin layer of epoxy resin, or a light-transmitting sheet, and the light-transmitting sheet is glass or ceramic.

7. The CSP light source according to claim 6, characterized in that, The light-transmitting layer is a light-transmitting layer doped with photoluminescent powder.

8. A CSP light source, characterized in that, It includes a semiconductor light-emitting chip and a light-transmitting layer; the semiconductor light-emitting chip includes a substrate, a semiconductor light-emitting stack disposed on the substrate, a thermally conductive pad and a pad assembly disposed on the semiconductor light-emitting stack; The thermally conductive pads and the pad assembly are insulated from each other; the light-transmitting layer is applied to the light-emitting surface and side surface of the semiconductor light-emitting chip.

9. The CSP light source according to claim 8, characterized in that, The light-transmitting layer is a silicone layer or a thin epoxy resin layer.

10. The CSP light source according to claim 8, characterized in that, The light-transmitting layer is a light-transmitting layer doped with photoluminescent powder.

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