Quartz crucible and crystal pulling device

Abstract

The utility model provides a quartz crucible and a crystal pulling device, the quartz crucible comprises a crucible main body, the crucible main body comprises a bubble layer and a transparent layer, and the bubble layer is arranged on the outer side of the transparent layer; the top of the crucible main body is provided with a camber angle structure, the camber angle structure is composed of the top of the bubble layer and the top of the transparent layer, and the camber angle structure obliquely extends towards the lower portion of the outer side from the edge of an opening of the crucible main body. The top of the quartz crucible is arranged to be of the camber angle structure, in the repeated feeding process, the gathering amount of silicon particles on the top of the quartz crucible can be reduced, the risk that the silicon particles on the top of the quartz crucible fall into the quartz crucible, and consequently melt crystallization or single crystal line breakage is caused is reduced, and the yield of a single crystal silicon rod is increased.

Description

A quartz crucible and crystal pulling device Technical Field

[0001] This application relates to the field of crystal growth equipment technology, and more specifically to a quartz crucible and a crystal pulling device. Background Technology

[0002] Quartz crucibles play a crucial role in the pulling process of single-crystal silicon rods. Material-wise, the inner layer of a quartz crucible is a layer of synthetic quartz sand with low aluminum content, while the outer layer is a layer of natural quartz sand with higher aluminum content. Visually, the inner layer of a quartz crucible consists of a transparent layer and a bubble layer. The shape and dimensional accuracy, purity, trace element control level, bubble layer distribution, thermal properties, and the degree of chemical reaction between the inner surface and the molten silicon of the quartz crucible all significantly affect the microstructure of the crystal, its electrical properties, and the yield, stability, and consistency of the product.

[0003] Single-crystal silicon rods are typically pulled using a multi-feed or continuous feeding method. However, during multi-feeding, rebound splashing of small-diameter polycrystalline material is inevitable. Some silicon particles accumulate at the top of the quartz crucible. Increasing the heating power can melt some of these particles, but not completely eliminate them. Furthermore, the heating power cannot be too high, as this can damage the heater and deform the quartz crucible. During subsequent growth, due to airflow or temperature, some of the silicon particles accumulated at the top of the quartz crucible may fall into the melt. Ideally, they will be melted; if not, they may grow at the edges, causing melt crystallization, or, if they approach the crystal rod, potentially causing breakage. Numerous and frequent breakages result in significant waste of equipment utilization, electricity, manpower, auxiliary consumables, and time, leading to substantial losses in production capacity and profits.

[0004] Therefore, improvements are needed to at least partially address the aforementioned problems. Summary of the Invention

[0005] The utility model description section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To at least partially solve the above problems, this utility model provides a quartz crucible, comprising: a crucible body, the crucible body including a bubble layer and a transparent layer, wherein the bubble layer is disposed outside the transparent layer; the top of the crucible body is provided with an outward tilting structure, the outward tilting structure being formed by the top of the bubble layer and the top of the transparent layer, wherein the outward tilting structure extends obliquely outward and downward from the opening edge of the crucible body.

[0007] For example, the outward tilt structure extends obliquely outward and downward from the opening edge of the crucible body, including: the top of the bubble layer is a horizontal plane, and the top of the transparent layer extends obliquely outward and downward to form a first outward tilt angle; and / or the top of the bubble layer and part of the top of the transparent layer form a horizontal plane, and the remaining top of the transparent layer extends obliquely outward and downward to form the first outward tilt angle.

[0008] For example, the outward tilt structure extends outward and downward from the opening edge of the crucible body, including: the top of the bubble layer and the top of the transparent layer both extend outward and downward to form a second outward tilt angle.

[0009] For example, the angle of the first outward tilt is 15 degrees to 85 degrees.

[0010] For example, the angle of the second outward tilt is 15 degrees to 85 degrees.

[0011] For example, the width of the cone surface of the first outward tilt angle is 1mm-15mm, and the width of the horizontal plane is 1mm-14mm.

[0012] For example, it further includes a protective layer, wherein the protective layer is disposed on top of the bubble layer.

[0013] For example, the top edge of the crucible body is provided with a rounded chamfer, the radius of curvature of which is 0.2mm-2mm.

[0014] According to another aspect of the present invention, a crystal pulling apparatus is provided, comprising: the aforementioned quartz crucible.

[0015] According to the present invention, by setting the top of the quartz crucible to an outward tilting structure, the amount of silicon particles accumulating at the top of the quartz crucible can be reduced during multiple feeding processes. This reduces the risk of silicon particles falling into the quartz crucible from the top, causing melt crystallization or single crystal breakage, and improves the yield of single crystal silicon rods. Attached Figure Description

[0016] The following drawings, which are incorporated herein by reference as part of this invention, are provided for understanding the invention. The drawings illustrate embodiments of the invention and their descriptions, serving to explain the principles of the invention.

[0017] In the attached image:

[0018] Figure 1 shows a schematic diagram of the structure of a quartz crucible according to a specific embodiment of the present invention;

[0019] Figure 2 shows a schematic diagram of the structure of a quartz crucible according to another specific embodiment of the present invention. Detailed Implementation

[0020] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid confusion with the present invention.

[0021] It should be understood that this invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this invention to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0022] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this utility model, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion.

[0023] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “under” the other element or feature will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0024] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0025] Semiconductor materials are the foundation of the semiconductor industry. Most semiconductor devices are made of silicon, and most integrated circuits are silicon integrated circuits. The raw material required for producing integrated circuits is single-crystal silicon, and the Czochralski method is a common method for producing single-crystal silicon. In the Czochralski method, high-purity polycrystalline silicon in bulk is placed in a quartz crucible and heated above its melting point until it is completely melted.

[0026] Quartz crucibles play a crucial role in the pulling process of single-crystal silicon rods. The shape and dimensional accuracy, purity, trace element control level, bubble layer distribution, thermal properties, and the degree of chemical reaction between the inner surface and the molten silicon of the quartz crucible all significantly affect the crystal's microstructure, electrical properties, and the product's yield, stability, and consistency. In the manufacturing process of quartz crucibles, the electric arc high-temperature melting method is generally used. The quartz crucible blanks undergo sandblasting or grinding, chamfering, quality inspection, cleaning, and packaging to become the finished product. The ridges on the surface of silicon single crystals are caused by the inclined {111} close-packed planes. For <100> oriented silicon single crystals, because four {111} planes intersect the cylindrical crystal at an incline, four symmetrically distributed growth ridges are formed on the crystal column surface. During the growth process, when the silicon single crystal loses its single-crystal structure, the four ridges can be seen to be interrupted simultaneously or separately, and the crystal edge becomes completely cylindrical; this is called a crystal break.

[0027] To increase the production capacity of monocrystalline silicon rods, multiple or continuous feeding methods are typically used. However, during multiple feeding processes, small-diameter polycrystalline silicon particles may rebound and splash, causing some silicon particles to accumulate at the top of the quartz crucible. In subsequent processes, some of these accumulated silicon particles will fall into the melt, potentially causing melt crystallization or crystal breakage. Frequent and numerous breakages result in significant waste of equipment utilization, electricity, manpower, auxiliary consumables, and time, leading to substantial losses in production capacity and profits. In related technologies, the top of the quartz crucible is typically designed with internal and external chamfers, but the width of its annular plane still reaches 8mm to 16mm, making it easy for small-particle polycrystalline silicon to fall during feeding. Some quartz crucibles also have an inwardly inclined chamfered top, but this does not prevent silicon falling onto the crucible surface from entering the molten silicon.

[0028] To solve at least one of the above-mentioned technical problems, this application provides a quartz crucible, comprising: a crucible body, the crucible body including a bubble layer and a transparent layer, wherein the bubble layer is disposed outside the transparent layer; the top of the crucible body is provided with an outward tilting structure, the outward tilting structure being formed by the top of the bubble layer and the top of the transparent layer, wherein the outward tilting structure extends obliquely outward and downward from the opening edge of the crucible body.

[0029] According to the quartz crucible of this application, by setting the top of the quartz crucible to an outward tilting structure, the amount of silicon particles accumulating at the top of the quartz crucible can be reduced during multiple feeding processes. This reduces the risk of silicon particles falling into the quartz crucible from the top, causing melt crystallization or single crystal breakage, and improves the yield of single crystal silicon rods.

[0030] To fully understand this application, a detailed structure will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0031] The following description refers to FIG1, which describes a quartz crucible according to an embodiment of the present application. As shown in FIG1, the quartz crucible includes a crucible body 100, the crucible body 100 includes a bubble layer 110 and a transparent layer 120, wherein the bubble layer 110 is disposed on the outside of the transparent layer 120; the top of the crucible body 100 is provided with an outward tilting structure 101, which is formed by the top of the bubble layer 110 and the top of the transparent layer 120, wherein the outward tilting structure 101 extends obliquely outward and downward from the opening edge of the crucible body 100.

[0032] In this embodiment, the crucible body 100 includes a bubble layer 110 and a transparent layer 120, which are arranged sequentially from the inside to the outside. An outward-tilting structure 101 is also provided on the top of the crucible body 100. During the multiple feeding processes in the Czochralski method for producing single-crystal silicon, small-diameter polycrystalline materials may rebound and splash, causing some silicon particles to accumulate on the top of the quartz crucible. In subsequent processes, some of the silicon particles accumulated on the top of the quartz crucible may fall into the melt, potentially causing melt crystallization or crystal breakage. Therefore, setting the top of the crucible body 100 as an outward-tilting structure 101 can reduce the amount of silicon particles accumulating on the top of the quartz crucible 100, thereby reducing the risk of silicon particles falling into the melt, and thus reducing or even avoiding melt crystallization or crystal breakage. The outward tilt structure 101 is composed of the top of the bubble layer 110 and the top of the transparent layer 120, and extends inclined downward from the opening edge of the crucible body 100 to form an outward tilt structure with an angle. The outward tilt makes it easier for silicon particles attached to the edge or accidentally falling to slide off rather than fall directly into the melt, reducing the amount of silicon particles accumulated at the top of the quartz crucible 100 and improving the yield of single crystal silicon rod products.

[0033] In some embodiments, the crucible body 100 includes a bubble layer 110 and a transparent layer 120, wherein the bubble layer 110 is disposed on the outer side of the transparent layer 120. The transparent layer 120 is used to reduce the bubble density in the area in contact with the silicon solution, weaken the intensity of the reaction between the bubbles and the silicon solution, and thus reduce the porosity in the single crystal, thereby improving the success rate of single crystal growth and the quality of the single crystal silicon rod. The purpose of the bubble layer 110 is to uniformly conduct the heat radiated by the heater to the inner layer of the quartz crucible. The transparent layer 120 is mainly made of quartz sand powder with very low aluminum content, while the bubble layer 110 is made of natural quartz sand powder with higher aluminum content. Disposing the transparent layer 120 on the inner side allows it to directly contact the silicon solution to ensure rapid and uniform heat transfer. Disposing the bubble layer 110 on the outer side of the transparent layer 120 effectively reduces heat conduction, thereby reducing heat loss and maintaining the stability of the internal temperature.

[0034] In some embodiments, the top of the crucible body 100 is provided with an outward tilting structure 101, which is composed of the top of the bubble layer 110 and the top of the transparent layer 120. The outward tilting structure 101 extends obliquely downwards and outwards from the opening edge of the crucible body 100. During the Czochralski process for producing single-crystal silicon, small-diameter polycrystalline materials may rebound and splash, causing some silicon particles to accumulate at the top of the quartz crucible. In subsequent processes, some of the silicon particles accumulated at the top of the quartz crucible may fall into the melt, potentially causing melt crystallization or crystal breakage. Therefore, setting the top of the crucible body 100 as an outward tilting structure 101 can reduce the amount of silicon particles accumulating at the top of the quartz crucible 100, thereby reducing the risk of silicon particles falling into the melt, and thus reducing or even avoiding melt crystallization or crystal breakage. The top of the bubble layer 110 and the top of the transparent layer 120 together form an outward tilt structure 101. The outward tilt structure 101 extends at an angle from the opening edge of the crucible body 100 to the outside and below of the quartz crucible to form a certain angle. This makes it easier for silicon particles attached to the edge or accidentally dropped to slide off rather than fall directly into the melt, reducing the amount of silicon particles accumulating at the top of the quartz crucible. This reduces the risk of silicon particles falling into the quartz crucible from the top of the crucible, thus preventing silicon melt crystallization or single crystal breakage.

[0035] In some embodiments, as shown in FIG1, the outward tilting structure 101 extends outward and downward from the opening edge of the crucible body 100, including: the top of the bubble layer 110 is a horizontal plane, and the top of the transparent layer 120 extends outward and downward to form a first outward tilting angle α. Specifically, the top of the bubble layer 110 and the top of the transparent layer 120 together constitute the outward tilting structure 101, setting the top of the bubble layer 110 as a flat contact surface, i.e., a horizontal plane, so that it can fit tightly with the sealing cap when the quartz crucible is subsequently evacuated, avoiding poor sealing problems and forming a stable negative pressure environment. In addition, the horizontal plane can effectively disperse stress and avoid deformation or damage caused by uneven local stress. The top of the transparent layer 120 extends outward and downward to form the first outward tilting angle α, where the first outward tilting angle α refers to the angle at which the top edge of the transparent layer 120 tilts outward and downward relative to the central axis of the quartz crucible (shown by the dotted line in FIG1). The outward-tilted structure reduces the accumulation of silicon particles at the top of the quartz crucible, while also making it easier for silicon particles adhering to the edge of the quartz crucible to slide off to the outside, rather than falling directly into the melt inside the quartz crucible. Specifically, the amount of silicon particles accumulated at the top of the quartz crucible in this application does not exceed 80% of the amount accumulated at the top of the quartz crucible in related technologies, and the probability of silicon particles falling into the quartz crucible in this application does not exceed 10% of the probability of silicon particles falling into the quartz crucible in related technologies. This outward-tilted structure effectively reduces product quality problems caused by the introduction of impurities.

[0036] In another embodiment, the top of the bubble layer 110 and a portion of the top of the transparent layer 120 form a horizontal plane, and the remaining top of the transparent layer 120 extends outward and downward to form the first outward tilt angle α. Specifically, the top of the bubble layer 110 and the top of the transparent layer 120 together constitute an outward tilt angle structure 101, setting the top of the bubble layer 110 and a portion of the top of the transparent layer 120 into a flat contact surface, i.e., a horizontal plane, and the remaining top of the transparent layer 120 extends outward and downward to form the first outward tilt angle α. This outward tilt angle structure effectively reduces product quality problems caused by the introduction of impurities.

[0037] In some embodiments, the width a of the cone surface of the first outward tilt angle α is 1mm-15mm, for example, the width a of the cone surface is 1mm, 2mm, 5mm, 8mm, 10mm, 12mm or 15mm, etc., and there is no specific limitation thereto. The width b of the horizontal plane is 1mm-14mm, for example, the width b of the horizontal plane is 1mm, 2mm, 5mm, 8mm, 10mm, 12mm or 14mm, etc., and there is no specific limitation thereto.

[0038] In some embodiments, the first outward tilt angle α is between 15 degrees and 85 degrees, for example. The first outward tilt angle α can be 15 degrees, 20 degrees, 40 degrees, 50 degrees, 60 degrees, 75 degrees, or 85 degrees, etc., and is not specifically limited thereto. The first outward tilt angle α cannot be too small to cause stress concentration, which can easily damage the crucible; the first outward tilt angle α cannot be too large to cause silicon particles to accumulate at the top of the quartz crucible, making it difficult for them to slide off. In this embodiment, the first outward tilt angle α can be between 30 degrees and 70 degrees.

[0039] In some embodiments, as shown in FIG2, the outward tilting structure 101 extends outward and downward from the opening edge of the crucible body 100, including: the top of the bubble layer 110 and the top of the transparent layer 120 both extending outward and downward to form a second outward tilting angle. Specifically, the top of the bubble layer 110 and the top of the transparent layer 120 are combined to form a continuous, smoothly transitioning tilted structure, thereby forming the second outward tilting angle β, that is, the tilting angle of the top of the bubble layer 110 is the same as the tilting angle of the top of the transparent layer 120. Exemplarily, the second outward tilting angle β refers to the angle at which the top edge of the transparent layer 120 tilts outward and downward relative to the central axis of the quartz crucible (shown by the dashed line in FIG2). By forming the second outward tilting angle β by both the top of the bubble layer 110 and the top of the transparent layer 120, the amount of silicon particles accumulated at the top of the quartz crucible is reduced, and silicon particles attached to the edge of the quartz crucible are more likely to slide to the outside rather than fall directly into the melt inside the quartz crucible, thus avoiding their entry into the melt and causing melt crystallization or crystal breakage. The amount of silicon particles accumulated at the top of the quartz crucible in this application does not exceed 20% of the amount accumulated at the top of the quartz crucible in related technologies, and the probability of silicon particles falling into the quartz crucible in this application does not exceed 10% of the probability of silicon particles falling into the quartz crucible in related technologies. This outward tilt structure effectively reduces product quality problems caused by the introduction of impurities.

[0040] In some embodiments, the second outward tilt angle β is between 15 degrees and 85 degrees, for example. The angle β can be 15 degrees, 20 degrees, 40 degrees, 50 degrees, 60 degrees, 75 degrees, or 85 degrees, etc., without specific limitation. The second outward tilt angle β cannot be too small to cause stress concentration, which can easily damage the crucible; the angle β cannot be too large to cause silicon particles to accumulate at the top of the quartz crucible, making it difficult for them to slide off. In this embodiment, the second outward tilt angle β can be between 30 degrees and 70 degrees.

[0041] In other embodiments, the top of the bubble layer 110 and the top of the transparent layer 120 both extend outward and downward to form a second outward tilt angle. The tilt angle of the top of the bubble layer 110 is different from that of the top of the transparent layer 120. For example, the tilt angle of the top of the bubble layer 110 is greater than that of the top of the transparent layer 120, or the tilt angle of the top of the bubble layer 110 is less than that of the top of the transparent layer 120. No specific limitation is made in this regard.

[0042] In some embodiments, there is a preset distance h between the top of the transparent layer 120 and the top of the bubble layer 110, where the preset distance h is 1mm-30mm. For example, the distance between the top of the transparent layer 120 and the top of the bubble layer 110 is 1mm, 5mm, 10mm, 15mm, 20mm, 25mm or 30mm, etc., and there is no specific limitation thereto.

[0043] In some embodiments, the quartz crucible further includes a protective layer, wherein the protective layer is disposed on top of the bubble layer 110. Since the bubble layer 110 is made of natural quartz sand powder with a high aluminum content, to prevent the bubble layer 110 from releasing harmful impurity elements that contaminate the silicon melt under high-temperature conditions, leading to contamination or a decrease in material performance, a protective layer is disposed on top of the bubble layer 110 to prevent the top of the bubble layer 110 from being exposed during subsequent rounded chamfering, thus preventing the release of harmful impurity elements at high temperatures. The material of the protective layer includes, but is not limited to, high-purity silica, high-purity alumina, high-purity magnesium oxide, high-purity zirconium oxide, high-purity carbon coating, high-purity silicon carbide, high-purity boron nitride, high-purity aluminum nitride, and other high-temperature resistant coating materials, etc., and is not specifically limited thereto.

[0044] In some embodiments, the top edge of the crucible body 100 is provided with a rounded chamfer (not shown in the figure). Since a sharp angle is prone to becoming a stress concentration point, it may cause cracks or even damage when subjected to external forces or temperature changes. The rounded chamfer can disperse stress, reduce local stress concentration, and thus improve the overall structural strength and durability of the quartz crucible.

[0045] For example, the radius of curvature of the rounded chamfer is 0.2mm-2mm, such as 0.2mm, 0.5mm, 0.7mm, 1mm, 1.3mm, 1.5mm, 1.8mm or 2mm, etc., without specific limitation.

[0046] In summary, the quartz crucible according to the embodiments of this application, by setting the top of the quartz crucible to an outward tilting structure, can reduce the amount of silicon particles accumulating at the top of the quartz crucible during multiple feeding processes, thereby reducing the risk of silicon particles falling into the quartz crucible and causing silicon melt crystallization or single crystal breakage, and improving the yield of single crystal silicon rods.

[0047] This application also provides a crystal pulling apparatus, including the aforementioned quartz crucible.

[0048] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0049] Similarly, it should be understood that, in order to simplify this application and aid in understanding one or more aspects of the application, various features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, the point of application is that the corresponding technical problem can be solved with fewer features than all of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0050] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0051] It should be noted that the above embodiments are illustrative of this application and not limiting of it, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.

Claims

1. A quartz crucible, characterized in that, include: The crucible body includes a bubble layer and a transparent layer, wherein the bubble layer is disposed outside the transparent layer; the top of the crucible body is provided with an outward tilting structure, which is formed by the top of the bubble layer and the top of the transparent layer, wherein the outward tilting structure extends obliquely outward and downward from the opening edge of the crucible body.

2. The quartz crucible as described in claim 1, characterized in that, The outward tilt structure extends outward and downward from the opening edge of the crucible body, including: the top of the bubble layer is a horizontal plane, and the top of the transparent layer extends outward and downward to form a first outward tilt angle; and / or the top of the bubble layer and part of the top of the transparent layer form a horizontal plane, and the remaining top of the transparent layer extends outward and downward to form the first outward tilt angle.

3. The quartz crucible as described in claim 1, characterized in that, The outward tilt structure extends outward and downward from the opening edge of the crucible body, including: the top of the bubble layer and the top of the transparent layer both extend outward and downward to form a second outward tilt angle.

4. The quartz crucible as described in claim 2, characterized in that, The first outward tilt angle is between 15 and 85 degrees.

5. The quartz crucible as described in claim 3, characterized in that, The second outward tilt angle is 15 degrees to 85 degrees.

6. The quartz crucible as described in claim 2, characterized in that, The width of the cone surface of the first outward tilt angle is 1mm-15mm, and the width of the horizontal plane is 1mm-14mm.

7. The quartz crucible as described in claim 1, characterized in that, There is a preset distance between the top of the transparent layer and the top of the bubble layer, the preset distance being 1mm-30mm.

8. The quartz crucible according to any one of claims 1-7, characterized in that, Also includes: A protective layer, wherein the protective layer is disposed on top of the bubble layer.

9. The quartz crucible as described in claim 1, characterized in that, The top edge of the crucible body is provided with a rounded chamfer, and the radius of curvature of the rounded chamfer is 0.2mm-2mm.

10. A crystal pulling apparatus, characterized in that, Includes: a quartz crucible as described in any one of claims 1-9.

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