Inverter bridge arm and inverter module
By using an inverter bridge arm composed of six IGBT modules and employing a specific connection method and multi-layer connection structure, the problem of low power density in mainstream photovoltaic inverters has been solved, achieving higher power density and current output capability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SINENG ELECTRIC CO LTD
- Filing Date
- 2025-04-28
- Publication Date
- 2026-05-19
AI Technical Summary
The number of IGBT chips that can be integrated into a single package in mainstream photovoltaic inverters is limited, resulting in a relatively low overall power density.
The inverter bridge arm consists of six IGBT modules. Each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. They are combined into an ANPC topology through a specific connection method. The IGBT modules are connected in parallel to improve power density. Multilayer copper busbars and stacked busbars are used to connect the pins.
It improves the power density of the inverter, increases the current output capability, reduces the area of the bus copper bus, lowers the cost, and facilitates the connection and assembly of the drive board.
Smart Images
Figure CN224264866U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of photovoltaic inverter technology, and in particular to an inverter bridge arm and an inverter module. Background Technology
[0002] Currently, mainstream photovoltaic inverters generally adopt the ANPC three-level topology structure based on two-level IGBT half-bridge modules. The number of IGBT chips that can be integrated in a single package is limited, resulting in a low overall power density. Utility Model Content
[0003] The technical problem to be solved by this utility model is that the number of IGBT chips that can be integrated in a single package of the current mainstream photovoltaic inverters is limited, resulting in a low overall power density.
[0004] To solve the above-mentioned technical problems, the first aspect of this utility model discloses an inverter bridge arm, the inverter bridge arm comprising:
[0005] Six IGBT modules are provided, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the anode of the second diode, and the emitter of the second IGBT transistor. The cathode of the first diode is connected to the collector of the first IGBT transistor, and the cathode of the second diode is connected to the collector of the second IGBT transistor. The collector of the first IGBT transistor is used as the first pin of the IGBT module, the emitters of the first and second IGBT transistors are used as the second pins of the IGBT module, and the collector of the second IGBT transistor is used as the third pin of the IGBT module.
[0006] The second pin of the first IGBT module is connected to the first and third pins of the second and fifth IGBT modules. The second pin of the second IGBT module is connected to the first and third pins of the third IGBT module. The second pin of the fifth IGBT module is connected to the first and third pins of the sixth IGBT module. The second pins of the third and sixth IGBT modules are connected to the first and third pins of the fourth IGBT module. The first and third pins of the first IGBT module serve as the positive DC bus connection point of the inverter bridge arm. The second pin of the fourth IGBT module serves as the negative DC bus connection point of the inverter bridge arm. The second pins of the fifth and sixth IGBT modules serve as the midpoint connection point of the DC bus of the inverter bridge arm. The second pin of the second IGBT module and the first and third pins of the third IGBT module serve as the AC side connection point of the inverter bridge arm.
[0007] As an optional implementation, in the first aspect of this utility model, the six IGBT modules are arranged in two columns, one above the other. The second and third IGBT modules are arranged side by side from left to right in the first column, and the first, fifth, sixth, and fourth IGBT modules are arranged side by side from left to right in the second column. The second and fifth IGBT modules are aligned vertically, and the third and sixth IGBT modules are aligned vertically.
[0008] As an optional implementation, in the first aspect of this utility model, six IGBT modules are arranged side by side in a row, with the first IGBT module, the second IGBT module, the fifth IGBT module, the sixth IGBT module, the third IGBT module, and the fourth IGBT module arranged sequentially from left to right.
[0009] As an optional implementation, in the first aspect of this utility model, six IGBT modules are arranged side by side in a row, with the first IGBT module, the fifth IGBT module, the second IGBT module, the third IGBT module, the sixth IGBT module, and the fourth IGBT module arranged sequentially from left to right.
[0010] As an optional implementation, in the first aspect of this utility model, the IGBT module is a 62mm module.
[0011] As an optional implementation, in the first aspect of this invention, the pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.
[0012] The second aspect of this utility model discloses an inverter module, including any of the inverter bridge arms mentioned above, wherein the number of inverter bridge arms is greater than 1 and they are arranged sequentially on a heat sink.
[0013] As an optional implementation, in the second aspect of this utility model, the output terminal of the inverter module is either a parallel output or an independent output.
[0014] As an optional implementation, in the second aspect of this utility model, the radiator is any one of an aluminum radiator, a two-phase flow radiator, or a liquid-cooled radiator.
[0015] Compared with the prior art, the embodiments of this utility model have the following beneficial effects:
[0016] In this embodiment of the invention, the inverter arm includes six IGBT modules, each of which includes a first IGBT and a second IGBT. The IGBTs are connected in a specific manner and can be combined to form an inverter arm with an ANPC topology, thereby improving power density. Attached Figure Description
[0017] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0018] Figure 1 This is an internal topology diagram of the IGBT module disclosed in this embodiment of the utility model;
[0019] Figure 2 This is a pinout diagram of the IGBT module disclosed in this embodiment of the utility model;
[0020] Figure 3 This is the first layout and connection method of each IGBT module in the inverter bridge arm disclosed in this utility model embodiment;
[0021] Figure 4 This is the second layout and connection method of each IGBT module in the inverter bridge arm disclosed in this utility model embodiment;
[0022] Figure 5 This is the third layout and connection method of each IGBT module in the inverter bridge arm disclosed in this utility model embodiment;
[0023] Figure 6 This is an inverter module disclosed in an embodiment of the present utility model;
[0024] Figure 7 This is another inverter module disclosed in this utility model embodiment. Detailed Implementation
[0025] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0026] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, apparatus, product, or end that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or ends.
[0027] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the present invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0028] This utility model discloses an inverter bridge arm and an inverter module. The inverter bridge arm includes six IGBT modules, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the anode of the second diode, and the emitter of the second IGBT transistor. The cathode of the first diode is connected to the collector of the first IGBT transistor, and the cathode of the second diode is connected to the collector of the second IGBT transistor. The collector of the first IGBT transistor serves as the first pin of the IGBT module, the emitters of the first and second IGBT transistors serve as the second pins of the IGBT module, and the collector of the second IGBT transistor serves as the third pin of the IGBT module. The second pin of the first IGBT module is connected to the first and third pins of a second IGBT module and a fifth IGBT module. The second pin of module Q3 is connected to the first and third pins of the third IGBT module, the second pin of module Q3 is connected to the first and third pins of module Q3, and the second pins of modules Q3 and Q3 are connected to the first and third pins of module Q4. The first and third pins of module Q3 serve as the positive DC bus connection points of the inverter arm, the second pin of module Q4 serves as the negative DC bus connection point, the second pins of modules Q3 and Q3 serve as the midpoint DC bus connection points, and the second pins of modules Q3 and Q3 serve as the AC side connection points. These can be combined to form an ANPC topology inverter arm, which can improve power density. Detailed explanations follow.
[0029] Example 1
[0030] Figure 1 This is an internal topology diagram of the IGBT module disclosed in this embodiment of the utility model;
[0031] Figure 2 This is a pinout diagram of the IGBT module disclosed in this embodiment of the utility model;
[0032] Figure 3 This is the first layout and connection method of each IGBT module in the inverter bridge arm disclosed in this utility model embodiment.
[0033] like Figure 1 , Figure 2 , Figure 3 As shown, this utility model discloses an inverter bridge arm, which includes:
[0034] Six IGBT modules are provided, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the anode of the second diode, and the emitter of the second IGBT transistor. The cathode of the first diode is connected to the collector of the first IGBT transistor, and the cathode of the second diode is connected to the collector of the second IGBT transistor. The collector of the first IGBT transistor is used as the first pin of the IGBT module, the emitters of the first and second IGBT transistors are used as the second pins of the IGBT module, and the collector of the second IGBT transistor is used as the third pin of the IGBT module.
[0035] The second pin of the first IGBT module Q1 is connected to the first and third pins of the second IGBT module Q2 and the fifth IGBT module Q5. The second pin of the second IGBT module Q2 is connected to the first and third pins of the third IGBT module Q3. The second pin of the fifth IGBT module Q5 is connected to the first and third pins of the sixth IGBT module Q6. The second pins of the third IGBT module Q3 and the sixth IGBT module Q6 are connected to the first and third pins of the fourth IGBT module Q4. The first and third pins of the first IGBT module Q1 are used as the positive DC bus connection point of the inverter bridge arm. The second pin of the fourth IGBT module Q4 is used as the negative DC bus connection point of the inverter bridge arm. The second pins of the fifth IGBT module Q5 and the sixth IGBT module Q6 are used as the midpoint connection point of the DC bus of the inverter bridge arm. The second pin of the second IGBT module Q2 and the first and third pins of the third IGBT module Q3 are used as the AC side connection point of the inverter bridge arm.
[0036] In one alternative implementation, the six IGBT modules are arranged in two columns, one above the other. The second IGBT module Q2 and the third IGBT module Q3 are arranged side by side from left to right in the first column, and the first IGBT module Q1, the fifth IGBT module Q5, the sixth IGBT module Q6, and the fourth IGBT module Q4 are arranged side by side from left to right in the second column. The second IGBT module Q2 and the fifth IGBT module Q5 are aligned vertically, and the third IGBT module Q3 and the sixth IGBT module Q6 are aligned vertically.
[0037] In one alternative implementation, the IGBT module is a 62mm module.
[0038] In one alternative implementation, the pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.
[0039] Example 2
[0040] Figure 4 This is the second layout and connection method of each IGBT module in the inverter bridge arm disclosed in this utility model embodiment.
[0041] like Figure 4 As shown, this utility model also discloses a second layout and connection method for each IGBT module in the inverter bridge arm, with six IGBT modules arranged side by side in a column, the first IGBT module Q1, the second IGBT module Q2, the fifth IGBT module Q5, the sixth IGBT module Q6, the third IGBT module Q3, and the fourth IGBT module Q4 arranged from left to right.
[0042] Example 3
[0043] Figure 5 This is the third layout and connection method of each IGBT module in the inverter bridge arm disclosed in this utility model embodiment.
[0044] like Figure 5 As shown, this utility model also discloses a third layout and connection method for each IGBT module in the inverter bridge arm, with six IGBT modules arranged side by side in a column, the first IGBT module Q1, the fifth IGBT module Q5, the second IGBT module Q2, the third IGBT module Q3, the sixth IGBT module Q6, and the fourth IGBT module Q4 arranged from left to right.
[0045] Example 4
[0046] Figure 6 This is an inverter module disclosed in an embodiment of the present utility model.
[0047] like Figure 6 As shown, this utility model discloses an inverter module, including any of the above-mentioned inverter bridge arms, the number of inverter bridge arms is greater than 1, and they are arranged sequentially on the heat sink.
[0048] In an optional embodiment, the output of the inverter module is an independent output.
[0049] In an optional embodiment, the heat sink is any one of an aluminum heat sink, a two-phase flow heat sink, or a liquid-cooled heat sink.
[0050] Example 5
[0051] Figure 7 This is another inverter module disclosed in this utility model embodiment.
[0052] like Figure 7 As shown, this utility model discloses another inverter module, which differs from the inverter module in Embodiment 4 in that the output terminal of the inverter module is a parallel output.
[0053] As can be seen, the inverter bridge arm and inverter module disclosed in this utility model adopt a common emitter 62mm IGBT module to connect the internal IGBTs in parallel, which can obtain a larger current output capability and improve the power density of the inverter. Moreover, the IGBT module terminals are all on the same side or the outside, which facilitates the connection of the drive board. At the same time, the IGBT module density is higher, which can reduce the area of the bus copper bus, reduce costs, and facilitate assembly.
[0054] Finally, it should be noted that the inverter bridge arm and inverter module disclosed in this utility model embodiment are merely preferred embodiments of this utility model, and are only used to illustrate the technical solutions of this utility model, not to limit it; although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of this utility model.
Claims
1. An inverter arm, characterized in that, The inverter bridge arm includes: Six IGBT modules are provided, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the anode of the second diode, and the emitter of the second IGBT transistor. The cathode of the first diode is connected to the collector of the first IGBT transistor, and the cathode of the second diode is connected to the collector of the second IGBT transistor. The collector of the first IGBT transistor is used as the first pin of the IGBT module, the emitters of the first and second IGBT transistors are used as the second pins of the IGBT module, and the collector of the second IGBT transistor is used as the third pin of the IGBT module. The second pin of the first IGBT module is connected to the first and third pins of the second and fifth IGBT modules. The second pin of the second IGBT module is connected to the first and third pins of the third IGBT module. The second pin of the fifth IGBT module is connected to the first and third pins of the sixth IGBT module. The second pins of the third and sixth IGBT modules are connected to the first and third pins of the fourth IGBT module. The first and third pins of the first IGBT module serve as the positive DC bus connection point of the inverter bridge arm. The second pin of the fourth IGBT module serves as the negative DC bus connection point of the inverter bridge arm. The second pins of the fifth and sixth IGBT modules serve as the midpoint connection point of the DC bus of the inverter bridge arm. The second pin of the second IGBT module and the first and third pins of the third IGBT module serve as the AC side connection point of the inverter bridge arm.
2. The inverter arm according to claim 1, characterized in that, The six IGBT modules are arranged in two columns, one above the other. The second and third IGBT modules are arranged side by side from left to right in the first column, and the first, fifth, sixth, and fourth IGBT modules are arranged side by side from left to right in the second column. The second and fifth IGBT modules are aligned vertically, and the third and sixth IGBT modules are aligned vertically.
3. The inverter arm according to claim 1, characterized in that, The six IGBT modules are arranged side by side in a row, with the first, second, fifth, sixth, third, and fourth IGBT modules arranged from left to right.
4. The inverter arm according to claim 1, characterized in that, The six IGBT modules are arranged side by side in a row, with the first IGBT module, the fifth IGBT module, the second IGBT module, the third IGBT module, the sixth IGBT module, and the fourth IGBT module arranged from left to right.
5. The inverter arm according to any one of claims 1-4, characterized in that, The IGBT module is a 62mm module.
6. The inverter arm according to any one of claims 1-4, characterized in that, The pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.
7. An inverter module, characterized in that, It includes the inverter bridge arm as described in any one of claims 1-6, wherein the number of the inverter bridge arms is greater than 1 and they are arranged sequentially on the heat sink.
8. The inverter module according to claim 7, characterized in that, The output of the inverter module can be either parallel output or independent output.
9. The inverter module according to claim 7, characterized in that, The radiator is any one of aluminum radiator, two-phase flow radiator, or liquid-cooled radiator.