A TO263 package structure

Abstract

The utility model relates to TO263 packaging technical field discloses a kind of TO263 packaging structure, TO263 packaging structure includes base island, chip and plastic package body;The drain electrode of chip is connected by solder and base island, the lower portion of base island is equipped with gate bonding platform and source bonding platform, the source of chip and gate are connected with source bonding platform and gate bonding platform by source bonding wire and gate bonding wire respectively;Plastic package body is set on base island, for wrapping chip, source bonding wire, gate bonding wire, source bonding platform and gate bonding platform;When actually using, the TO263 packaging structure of the utility model can increase the area of source bonding platform, corresponding can promote current carrying capacity and increase creepage distance, since the drain electrode below base island.

Description

Technical Field

[0001] This utility model relates to the field of TO263 packaging technology, specifically to a TO263 packaging structure. Background Technology

[0002] The TO263 package is a common packaging form for electronic components, typically used to package chips such as diodes, MOSFETs, and IGBTs. Due to its large size and exposed heat sink, it has good heat dissipation capabilities, making it suitable for high-power and high-temperature applications.

[0003] A schematic diagram of the existing TO263 package structure is shown below. Figure 1 As shown, Figure 1 The left side of the diagram shows the product appearance of the package, and the right side shows the internal structure of the package. From the diagram, it can be seen that the base island 102 is provided with a gate bonding platform 103, a drain 104, and a source bonding platform 105 from left to right.

[0004] for Figure 1 The TO263 package structure shown, while simple in structure and relatively mature in technology, still has the following problems in practical use: 1. The drain electrode 104 is relatively short, which makes it inconvenient to operate in practical applications; Second: The gate bonding platform 103, drain 104 and source bonding platform 105 are located on the same side of the base island 102, which results in a small bonding area of ​​the source bonding platform 105. Consequently, the current carrying capacity and creepage distance of the package are limited, which cannot meet the requirements of certain special applications. Utility Model Content

[0005] In view of the shortcomings of the prior art, the present invention provides a TO263 package structure. The technical problem to be solved is that the existing TO263 package structure has problems such as inconvenient operation, limited current carrying capacity and small creepage distance because the drain, gate bonding platform and source bonding platform are located on the same side of the base island and the drain is short.

[0006] To solve the above technical problems, this utility model provides the following technical solution: a TO263 package structure, including a base island, a chip, and a molding compound; The drain of the chip is connected to the base island through a solder layer. A gate bonding platform and a source bonding platform are provided at intervals below the base island. The source and gate of the chip are connected to the source bonding platform and the gate bonding platform through source bonding lines and gate bonding lines, respectively. The molding compound is disposed on the base island and is used to encapsulate the chip, source bonding lines, gate bonding lines, source bonding platform, and gate bonding platform.

[0007] In one embodiment, the area of ​​the source bonding platform is 1.5 to 3 times the area of ​​the gate bonding platform.

[0008] In one embodiment, the gate bonding platform is connected to the chip via a gate bonding wire, and the source bonding platform is connected to the chip via at least one source bonding wire, wherein the diameter of the source bonding wire is greater than or equal to the diameter of the gate bonding wire.

[0009] In one embodiment, the base island is provided with a first waterproof groove on its left and right sides, the depth of the first waterproof groove is between 0.05mm and 0.20mm, and an embossing is provided in the first waterproof groove, the depth of the embossing being less than or equal to 0.05mm.

[0010] In one embodiment, a first locking hole is provided above the base island, and dovetail grooves are provided on the left and right sides of the first locking hole.

[0011] In one embodiment, the ratio of the depth of the dovetail groove to the thickness of the base island is between one-fifth and one-third.

[0012] In one embodiment, the left and right sides of the base island are respectively provided with a locking part that is integrally trapezoidal in shape. The ratio of the depth of the locking part to the depth of the base island is between one-quarter and one-third. A locking groove is formed on the side of the locking part that is away from the base island.

[0013] In one embodiment, the gate bonding platform and the source bonding platform are respectively connected to pins, and the bending direction of the pins connected to the gate bonding platform and the source bonding platform is the same, respectively facing towards the base island or away from the base island.

[0014] In one embodiment, a second waterproof groove is provided on the front and bottom surfaces of the connection areas between the gate bonding platform and the source bonding platform and the pin.

[0015] In one embodiment, a second locking hole is provided on the connection area between the gate bonding platform and the source bonding platform and the pin, and the second locking hole passes through the second waterproof groove.

[0016] The advantages of this invention compared to the prior art are as follows: The TO263 package structure of this invention increases the area of ​​the drain by placing the drain on the back of the base island, and still placing the gate bonding platform and the source bonding platform below the base island. This makes it easier to operate. Similarly, since there is no drain below the base island, the area of ​​the source bonding platform can be increased, which can correspondingly improve the current carrying capacity and increase the creepage distance. Attached Figure Description

[0017] Figure 1This is a schematic diagram of the existing TO263 package structure; Figure 2 This is a front view of the TO263 package structure in the embodiment after the molding compound has been removed. Figure 3 This is a side view of the TO263 package structure in the embodiment; Figure 4 This is a top view of the TO263 package structure in the embodiment; Figure 5 This is a schematic diagram of the pin bending direction in the embodiment; Figure 6 This is another schematic diagram showing the pin bending direction in the embodiment; Figure 7 This is a cross-sectional view of the first locking hole in the embodiment. Detailed Implementation

[0018] The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic diagrams, illustrating only the basic structure of the present invention, and therefore only show the components relevant to the present invention.

[0019] like Figure 2 and 3 As shown, this embodiment provides a TO263 package structure, including a base island 2, a chip 10, and a molding compound 14; The drain of chip 10 is connected to base island 2 through solder layer. Gate bonding platform 3 and source bonding platform 4 are provided at intervals below base island 2. The source and gate of chip 10 are connected to source bonding platform 4 and gate bonding platform 3 through source bonding line 9 and gate bonding line 8, respectively. The molding compound 14 is disposed on the base island 2 and is used to encapsulate the chip 10, the source bonding line 9, the gate bonding line 8, the source bonding platform 4, and the gate bonding platform 3; It should be noted that although the solder layer is not labeled in the embodiment, it is a common technique for those skilled in the art to connect the drain of chip 10 to base island 2 through the solder layer.

[0020] In this embodiment, the solder layer can be made of lead-tin-silver alloy, lead-tin alloy, tin-silver-antimony alloy, tin-silver alloy or silver, with lead-tin-silver alloy being the preferred choice.

[0021] In addition, in this embodiment, since the drain of chip 10 is connected to base island 2 through solder layer, and the side of base island 2 facing away from chip 10 is the heat dissipation surface and device drain of the structure of this application.

[0022] In practical use, the TO263 package structure of this utility model increases the area of ​​the drain 15 by placing the drain 15 on the back of the base island 2, and still placing the gate bonding platform 3 and the source bonding platform 4 below the base island 2, which facilitates operation. Similarly, since there is no drain 15 below the base island 2, the area of ​​the source bonding platform 4 can be increased, which can correspondingly improve the current carrying capacity and increase the creepage distance.

[0023] Specifically, in this embodiment, the area ratio of the source bonding platform 4 of the improved TO263 package structure is... Figure 1 The area of ​​the source bonding platform 105 in the middle is increased by 20%, and the area of ​​the gate bonding platform 3 is larger than that of the source bonding platform 105 in the middle. Figure 1 The area of ​​the gate bonding platform 104 in the middle is increased by 15%.

[0024] Specifically, in this embodiment, the area relationship between the source bonding platform 4 and the gate bonding platform 3 is as follows: The area of ​​the source bonding platform 4 is 1.5 to 3 times the area of ​​the gate bonding platform 3; for example, the area of ​​the source bonding platform 4 can be 1.8 times, 2 times, 2.5 times or 2.8 times the area of ​​the gate bonding platform 3.

[0025] Specifically, in this embodiment, the gate bonding platform 3 is connected to the chip 10 via a gate bonding wire 8, and the source bonding platform 4 is connected to the chip 10 via at least one source bonding wire 9, wherein the diameter of the source bonding wire 9 is greater than or equal to the diameter of the gate bonding wire 8. Compared to... Figure 1 The structure shown can increase the number of bonding wires by 20% to 35%, and the corresponding current carrying capacity is also increased by 20% to 35%. The creepage distance between the drain 15 and the source bonding platform 4 is increased by 230%.

[0026] In this embodiment, the gate bonding wire 8 and the source bonding wire 9 can be made of copper, gold, aluminum, silver, or an alloy.

[0027] Specifically, in this embodiment, in Figure 1 In the middle, the left and right sides of the base island 2 are respectively provided with a first waterproof groove 11, and the first waterproof groove 11 is provided with an imprint; in addition, the depth of the first waterproof groove 11 is between 0.05mm and 0.20mm, for example, it can be 0.08mm, 0.1mm, 0.15mm or 0.18mm; the depth of the imprint is less than or equal to 0.05mm.

[0028] In practical use, the first waterproof groove 11 can increase the bonding area between the molding compound 14 and the base island 2, extend the path of water vapor intrusion, and prevent the chip 10 from being affected by external water vapor. Imprinting can further increase the bonding force between the molding compound 14 and the base island 2, prevent delamination between the molding compound 14 and the base island 2, and prevent the chip 10 from being affected by stress.

[0029] Specifically, in this embodiment, in Figure 1 In the middle, a first locking hole 12 is provided above the base island 2, and dovetail grooves 13 are respectively provided on the left and right sides of the first locking hole 12; in addition, the ratio of the depth of the dovetail grooves 13 to the thickness of the base island 2 is between one-fifth and one-third. Furthermore, the structure of the first locking hole 12 is as follows... Figure 7 As shown, it is arranged in three sections along the thickness direction of the base island 2, including a cylindrical hole 120, a cylindrical hole 122 and a funnel-shaped intermediate hole 121. The width of the hole 120 and the width of the hole 122 are greater than the width of the intermediate hole 121.

[0030] In practical use, the first locking hole 12 and the dovetail groove 13 can increase the bonding force between the molding compound 14 and the base island 2, avoid delamination between the molding compound 14 and the base island 2, and at the same time reduce the mechanical stress of the product in the lead separation process and the thermal stress at the application end, so as to avoid the chip 10 being damaged by stress.

[0031] like Figure 4 As shown, the left and right sides of the base island 2 are respectively provided with a locking part 16 in the shape of a trapezoid. The depth of the locking part 16 is between one-quarter and one-third of the depth of the base island 2. A locking groove 17 is provided on the side of the locking part 16 facing away from the base island 2.

[0032] In practical use, the locking part 16 and the locking groove 17 can increase the bonding area and bonding force between the molding compound 14 and the base island 2, extend the path of moisture intrusion, and prevent the chip 10 from being affected by external moisture and the delamination phenomenon between the molding compound 14 and the base island 2.

[0033] Specifically, in this embodiment, the gate bonding platform 3 and the source bonding platform 4 are respectively connected to pins 5. The bending directions of the pins 5 connected to the gate bonding platform 3 and the source bonding platform 4 are the same, either facing the base island 2 or away from the base island 2. When they are away from the base island 2, the bending direction of the pin 5 connected to the drain 16 is also away from the base island. At this time, the heat dissipation performance can be improved by 20% to 40%. The bending implementation method of the pins 5 can be referred to Figure 5 and Figure 6 .

[0034] In addition, in this embodiment, a second waterproof groove 6 is provided on the front and bottom surfaces of the connection areas between the gate bonding platform 3 and the source bonding platform 4 and the pin 5; at the same time, a second locking hole 7 is provided on the connection areas between the gate bonding platform 3 and the source bonding platform 4 and the pin 5, and the second locking hole 7 passes through the second waterproof groove 6.

[0035] In practical use, the second locking hole 7 and the second waterproof groove can increase the bonding area and bonding force between the molding compound 14 and the gate bonding platform 3 and the source bonding platform 4, avoiding delamination between the molding compound 14 and the gate bonding platform 3 and the source bonding platform 4. At the same time, it can also reduce the mechanical stress of the product in the lead separation process and the thermal stress at the application end, avoiding damage to the chip due to stress.

[0036] Based on the above description and inspired by this utility model, those skilled in the art can make various changes and modifications without departing from the technical concept of this utility model. The technical scope of this utility model is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. A TO263 package structure, characterized in that, Includes base island (2), chip (10) and encapsulation (14); The drain of the chip (10) is connected to the base island (2) through a solder layer. The base island (2) is provided with a gate bonding platform (3) and a source bonding platform (4) at intervals below it. The source and gate of the chip (10) are connected to the source bonding platform (4) and the gate bonding platform (3) through source bonding lines (9) and gate bonding lines (8), respectively. The molding compound (14) is disposed on the base island (2) and is used to encapsulate the chip (10), source bonding line (9), gate bonding line (8), source bonding platform (4) and gate bonding platform (3).

2. The TO263 package structure according to claim 1, characterized in that, The area of ​​the source bonding platform (4) is 1.5 to 3 times the area of ​​the gate bonding platform (3).

3. The TO263 package structure according to claim 1, characterized in that, The gate bonding platform (3) is connected to the chip (10) through a gate bonding line (8), and the source bonding platform (4) is connected to the chip (10) through at least one source bonding line (9). The diameter of the source bonding line (9) is greater than or equal to the diameter of the gate bonding line (8).

4. The TO263 package structure according to claim 1, characterized in that, The base island (2) is provided with a first waterproof groove (11) on the left and right sides respectively. The depth of the first waterproof groove (11) is between 0.05mm and 0.20mm. The first waterproof groove (11) is provided with an embossing. The depth of the embossing is less than or equal to 0.05mm.

5. A TO263 package structure according to claim 1, characterized in that, The base island (2) has a first locking hole (12) on its upper part, and dovetail grooves (13) are respectively provided on the left and right sides of the first locking hole (12).

6. A TO263 package structure according to claim 5, characterized in that, The ratio of the depth of the dovetail groove (13) to the thickness of the base island (2) is between one-fifth and one-third.

7. A TO263 package structure according to claim 1, characterized in that, The base island (2) has a locking part (16) with an overall trapezoidal shape on its left and right sides respectively. The depth of the locking part (16) is between one-quarter and one-third of the depth of the base island (2). The locking part (16) has a locking groove (17) on the side facing away from the base island (2).

8. A TO263 package structure according to claim 1, characterized in that, The gate bonding platform (3) and the source bonding platform (4) are respectively connected to pins (5). The bending direction of the pins (5) connected to the gate bonding platform (3) and the source bonding platform (4) is the same, and they are facing the base island (2) or away from the base island (2).

9. A TO263 package structure according to claim 8, characterized in that, The front and bottom surfaces of the connection areas of the gate bonding platform (3) and the source bonding platform (4) with the pin (5) are respectively provided with second waterproof grooves (6).

10. A TO263 package structure according to claim 9, characterized in that, The gate bonding platform (3) and the source bonding platform (4) are respectively provided with a second locking hole (7) on the connection area with the pin (5), and the second locking hole (7) passes through the second waterproof groove (6).

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