Substrate treatment device and substrate treatment method

Abstract

To provide a substrate treatment device capable of performing steps to a plurality of substrates in a multi-station chamber independently from each other, and a substrate treatment method.SOLUTION: A substrate treatment device comprises: a multi-station chamber having a first step station, a second step station, a third step station, and a fourth step station for performing steps independently from each other, and capable of performing steps to a plurality of substrates; a gas supply part for parting and supplying a plurality of gases to the first step station, the second step station, the third step station, and the fourth step station; and a control part for controlling the gas supply part so that the plurality of gases are sequentially supplied to the first to fourth step stations by switching the gas supplied to the first step station, the second step station, the third step station, and the fourth step station.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to a substrate processing apparatus and a substrate processing method capable of performing processes independently on a plurality of substrates in a multi-station chamber. [Background technology]

[0002] A substrate processing apparatus is an apparatus that positions a substrate to be processed within a processing space, and then deposits reactive particles contained in a process gas injected into the processing space onto the substrate using a method such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). There are single wafer types that can perform a processing process on a single substrate, and batch types that can perform a processing process on multiple substrates simultaneously.

[0003] Generally, a batch-type substrate processing apparatus performs a processing process by accommodating multiple substrates in a multi-tiered manner in a vertical process tube. In such a batch-type substrate processing apparatus, the process gas is not sprayed perpendicularly to the deposition surface of the substrate, but is sprayed laterally, which may cause a problem that the deposition rate varies depending on the distance from the spray nozzle.

[0004] Furthermore, single-wafer processing apparatuses are capable of processing only one substrate at a time in one chamber, which has the drawback of low process yields.

[0005] For these reasons, there is a strong demand for a substrate processing apparatus that can process a plurality of substrates in a single chamber while spraying process gas perpendicularly to the deposition surfaces of the substrates. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Republic of Korea Patent No. 10-2028202 Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention provides a substrate processing apparatus and method for performing different processes in a plurality of process stations by separately supplying a plurality of gases to the plurality of process stations. [Means for solving the problem]

[0008] A substrate processing apparatus according to an embodiment of the present invention may include a multi-station chamber including a first process station, a second process station, a third process station, and a fourth process station, each of which performs a process independently, and capable of performing processes on a plurality of substrates; a gas supply unit for dividing and supplying a plurality of gases to the first process station, the second process station, the third process station, and the fourth process station, respectively; and a control unit for controlling the gas supply unit to switch the gases supplied to the first process station, the second process station, the third process station, and the fourth process station, respectively, so that the plurality of gases are sequentially supplied to the first to fourth process stations.

[0009] The gas supply unit may include a first gas supply unit that supplies a first process gas to the multi-station chamber, a second gas supply unit that supplies a second process gas different from the first process gas to the multi-station chamber, a first purge supply unit that supplies a first purge gas to the multi-station chamber, and a second purge supply unit that supplies a second purge gas to the multi-station chamber.

[0010] The control unit may control the first gas supply unit, the second gas supply unit, the first purge supply unit, and the second purge supply unit so that the first process gas, the second process gas, the first purge gas, and the second purge gas are respectively supplied to different process stations among the first process station, the second process station, the third process station, and the fourth process station.

[0011] The second process station may be arranged in a first direction of the first process station, the fourth process station may be arranged in a second direction perpendicular to the first direction of the first process station, and the third process station may be arranged in a diagonal direction between the first direction and the second direction of the first process station.

[0012] The control unit may control the first gas supply unit to supply the first process gas to the first process station, the second process station, the third process station, and the fourth process station in this order; control the first purge supply unit to supply the first purge gas to the fourth process station, the first process station, the second process station, and the third process station in this order; control the second gas supply unit to supply the second process gas to the third process station, the fourth process station, the first process station, and the second process station in this order; and control the second purge supply unit to supply the second purge gas to the second process station, the third process station, the fourth process station, and the first process station in this order.

[0013] The first gas supply unit includes a first gas reservoir connected to the first process station, the second process station, the third process station, and the fourth process station, respectively, for storing the first process gas and selectively supplying the first process gas to the first process station, the second process station, the third process station, and the fourth process station, and the second gas supply unit includes a second gas reservoir connected to the first process station, the second process station, the third process station, and the fourth process station, respectively, for storing the second process gas and selectively supplying the second process gas to the first process station, the second process station, the third process station, and the fourth process station, The purge supply unit may include a first purge reservoir connected to the first process station, the second process station, the third process station, and the fourth process station, respectively, for storing the first purge gas and selectively supplying the first purge gas to the first process station, the second process station, the third process station, and the fourth process station, and the second purge supply unit may include a second purge reservoir connected to the first process station, the second process station, the third process station, and the fourth process station, respectively, for storing the second purge gas and selectively supplying the second purge gas to the first process station, the second process station, the third process station, and the fourth process station.

[0014] The first gas reservoir and the second gas reservoir may be different in size than the first purge reservoir and the second purge reservoir.

[0015] The first purge reservoir and the second purge reservoir may be smaller than the first gas reservoir and the second gas reservoir.

[0016] The first purge reservoir and the second purge reservoir may be the same size.

[0017] The first gas supply unit may further comprise a plurality of first gas valves respectively disposed between the first process station, the second process station, the third process station and the fourth process station and the first gas reservoir, the second gas supply unit may further comprise a plurality of second gas valves respectively disposed between the first process station, the second process station, the third process station and the fourth process station and the second gas reservoir, the first purge supply unit may further comprise a plurality of first purge valves respectively disposed between the first process station, the second process station, the third process station and the fourth process station and the first purge reservoir, and the second purge supply unit may further comprise a plurality of second purge valves respectively disposed between the first process station, the second process station, the third process station and the fourth process station and the second purge reservoir.

[0018] The substrate processing apparatus may further include a plurality of valve blocks on which the first gas valve, the second gas valve, the first purge valve, and the second purge valve are supported, the valve blocks being disposed above the first process station, the second process station, the third process station, and the fourth process station, respectively.

[0019] According to another embodiment of the present invention, a substrate processing method using a multi-station chamber including a first processing station, a second processing station, a third processing station, and a fourth processing station, each of which performs a process independently, may include a first process of dividing a plurality of gases and supplying the divided gases to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively, in a primary manner; a second process of dividing the plurality of gases and supplying the divided gases to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively, in a secondary manner so that a gas different from the first process is supplied to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively; a third process of dividing the plurality of gases and supplying the divided gases to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively, in a tertiary manner so that a gas different from the second process is supplied to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively, in a fourth process of dividing the plurality of gases and supplying the divided gases to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively, in a fourth manner so that a gas different from the third process is supplied to the first processing station, the second processing station, the third processing station, and the fourth processing station, respectively.

[0020] The plurality of gases include a first process gas, a second process gas different from the first process gas, a first purge gas, and a second purge gas, the first process includes a step of supplying the first process gas, the second purge gas, the second process gas, and the first purge gas to the first process station, the second process station, the third process station, and the fourth process station, respectively, and the second process includes a step of supplying the first purge gas, the first process gas, the second purge gas, and the second process gas to the first process station, the second process station, the third process station, and the fourth process station, respectively. the third process station includes a step of supplying the second process gas, the first purge gas, the first process gas and the second purge gas to the first process station, the second process station, the third process station and the fourth process station, respectively; and the fourth process station includes a step of supplying the second purge gas, the second process gas, the first purge gas and the first process gas to the first process station, the second process station, the third process station and the fourth process station, respectively.

[0021] The second process station may be arranged in a first direction of the first process station, the fourth process station may be arranged in a second direction perpendicular to the first direction of the first process station, and the third process station may be arranged in a diagonal direction between the first direction and the second direction of the first process station.

[0022] The first process gas and the second process gas may be different from the first purge gas and the second purge gas in at least one of the spray amount, the spray pressure, and the spray speed in the first process, the second process, the third process, and the fourth process.

[0023] In the first step, the second step, the third step and the fourth step, at least one of the spray amount, the spray pressure and the spray speed of the first purge gas and the second purge gas may be the same. Effect of the Invention

[0024] The substrate processing apparatus according to an embodiment of the present invention can supply a constant amount of gas to the multi-station chamber by dividing and supplying a plurality of gases to the first, second, third and fourth process stations of the multi-station chamber, respectively. As a result, a stable process pressure can be controlled in the multi-station chamber, and contamination of the multi-station chamber caused by a sudden change in process pressure in the multi-station chamber due to a change in gas can be improved.

[0025] In addition, since the amount and / or pressure of the gas supplied to the first, second, third and fourth process stations can be controlled to a constant value, the thickness uniformity of the thin film deposited in each process station can be improved.

[0026] That is, a first process gas, a second process gas, a first purge gas, and a second purge gas are separately supplied to a first process station, a second process station, a third process station, and a fourth process station, respectively, and the first process gas, the first purge gas, the second process gas, and the second purge gas are sequentially supplied to each process station. By performing different processes in each process station, it is possible to deposit a thin film having a uniform thickness in each process station and to improve gas supply efficiency.

[0027] The first process gas, the first purge gas, the second process gas, and the second purge gas can be sequentially supplied to deposit a thin film by atomic layer deposition (ALD). The supply of the first process gas, the first purge gas, the second process gas, and the second purge gas can be stably and precisely controlled to uniformly deposit a thin film on an atomic layer basis over the entire surface of the substrate. [Brief description of the drawings]

[0028] [Figure 1] 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] FIG. 1 is a schematic cross-sectional view illustrating a multi-station chamber according to an embodiment of the present invention. [Diagram 3] FIG. 3 is a conceptual diagram for explaining the supply of gas to each process station according to an embodiment of the present invention. [Figure 4] 6A to 6C are process flow diagrams illustrating a substrate processing method according to another embodiment of the present invention. [Diagram 5] FIG. 11 is a conceptual diagram illustrating gas supply to each process station over time according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] Hereinafter, the embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms, and these embodiments are provided merely to complete the disclosure of the present invention and to fully inform those skilled in the art of the scope of the invention. In describing the present invention, the same reference numerals are used for the same components, and the drawings may be partially exaggerated in size to accurately describe the embodiments of the present invention, and the same numerals in the drawings indicate the same components.

[0030] FIG. 1 is a schematic view showing a substrate processing apparatus according to one embodiment of the present invention.

[0031] Referring to FIG. 1, a substrate processing apparatus 100 according to an embodiment of the present invention may include a multi-station chamber 110 including a first processing station 111, a second processing station 112, a third processing station 113, and a fourth processing station 114 in which processes are performed independently, and capable of performing processes on a plurality of substrates 10; a gas supplying unit 120 for dividing and supplying a plurality of gases to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, respectively; and a control unit 130 for controlling the gas supplying unit 120 to switch the gases supplied to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, respectively, so that the plurality of gases are sequentially supplied to the first to fourth processing stations 111, 112, 113, and 114.

[0032] The multi-station chamber 110 can perform processes on a plurality of substrates 10 and may include a first process station 111, a second process station 112, a third process station 113, and a fourth process station 114 in which processes are performed independently. Here, the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 are merely divided into areas within one multi-station chamber 110, and are in communication with each other, and are not spatially separated (or isolated) by partitions or the like as in the case of a plurality of chambers.

[0033] In this case, the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 may each perform a process independently, and may be composed of components such as a shower head and a substrate support, and are merely process stations numbered to distinguish them from one another based on their position (or area).

[0034] FIG. 2 is a schematic cross-sectional view showing a multi-station chamber according to one embodiment of the present invention, taken along line AA' in FIG.

[0035] 2, the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 may each include a shower head to which a gas is sprayed and a substrate support part on which a (single) substrate 10 is supported. The shower head can spray gas for substrate processing onto the substrate 10, the substrate support part can support the substrate 10 to be processed, and the gas can be sprayed onto the substrate 10 supported by the substrate support part to perform substrate processing such as deposition.

[0036] For example, the first process station 111 may include a first substrate support 111b on which the first substrate 10 is supported, and a first shower head 111a arranged on the first substrate support 111b and spraying a gas for substrate processing onto the first substrate 10 supported by the first substrate support 111b, and the second process station 112 may include a second substrate support 112b on which the second substrate 10 is supported, and a second shower head 112a arranged on the second substrate support 112b and spraying a gas for substrate processing onto the second substrate 10 supported by the second substrate support 112b.

[0037] The first shower head 111a and the second shower head 112a may be connected to a gas supply unit 120, and may be disposed in the first process station 111 and the second process station 112, respectively, and may be selectively supplied with any one of a plurality of gases and spray the supplied gas. In this case, the first shower head 111a and the second shower head 112a may be supplied with the same type of gas or different types of gases.

[0038] The first substrate support part 111b and the second substrate support part 112b are disposed in the first process station 111 and the second process station 112, respectively, and can support the first substrate 10 and the second substrate 10, respectively. This allows multiple substrates 10 to be processed simultaneously in one multi-station chamber 110, thereby improving process yield.

[0039] The gas supply unit 120 may selectively supply a plurality of gases to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and may divide the plurality of gases and supply them to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively. The gas supply unit 120 may generally supply the same type of gas to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, or may separate the gases and supply different gases to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, or may supply a different gas to at least one of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 from the other processing stations. In this case, the number of gas supply sources of the gas supply unit 120 may be the same as the number of the gases, or may be the same as the number of processing stations, or the number of the gases may be the same as the number of processing stations.

[0040] Here, the gas supply unit 120 may include the gas supply source and a gas supply line that supplies gas from the gas supply source to the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 of the multi-station chamber 110.

[0041] The control unit 130 may control the gas supply unit 120 to switch the gases supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, so that the plurality of gases are sequentially (or in order) supplied to the first to fourth process stations 111, 112, 113, and 114, respectively, and may control the gases supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 by switching the gases supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and may control the gases to be sequentially supplied differently from the gas supplied immediately before (or previously).

[0042] For example, the multiple gases may be supplied to each of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 in a predetermined order, and the gas to be supplied (next or thereafter) may be determined based on the gas supplied immediately before, or the gas may be supplied so as not to overlap (or not to overlap) with the gas supplied immediately before.

[0043] 3 is a conceptual diagram for explaining the supply of gas to each process station according to an embodiment of the present invention, in which (a) of FIG. 3 shows a first process in which a first process gas is supplied to a first process station, (b) of FIG. 3 shows a second process in which a first process gas is supplied to a second process station, (c) of FIG. 3 shows a third process in which a first process gas is supplied to a third process station, and (d) of FIG. 3 shows a fourth process in which a first process gas is supplied to a fourth process station. In this case, the plurality of gases may be circulated in the order of the first process gas, the first purge gas, the second process gas, and the second purge gas, and the first process gas may be supplied following the second purge gas, and different gases may be supplied to each process station at the same time because different (supply) start gases are different.

[0044] 1 and 3, the gas supply unit 120 may include a first gas supply unit 121 for supplying a first process gas to the multi-station chamber 110, a second gas supply unit 122 for supplying a second process gas different from the first process gas to the multi-station chamber 110, a first purge supply unit 123 for supplying a first purge gas to the multi-station chamber 110, and a second purge supply unit 124 for supplying a second purge gas to the multi-station chamber 110. The first gas supply unit 121 may supply a first process gas to the multi-station chamber 110, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, to supply the first process gas, respectively. For example, the first gas supply unit 121 may be connected to each of the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and may include a first process gas supply source and a first process gas supply line for supplying the first process gas from the first process gas supply source to each of the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, the first process gas may be a source gas (S) or may include titanium tetrachloride (TiCl4) and dichlorosilane (DCS, SiH2Cl2), etc.

[0045] The second gas supply unit 122 may supply a second process gas different from the first process gas to the multi-station chamber 110, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the second process gas, respectively. For example, the second gas supply unit 122 may be connected to each of the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and may include a second process gas supply source and a second process gas supply line for supplying the second process gas from the second process gas supply source to each of the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, the second process gas may be a reactant gas (R) that reacts with the source gas, or may include ammonia (NH3) and hydrogen (H2), etc.

[0046] The first purge supply unit 123 may supply a first purge gas to the multi-station chamber 110, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the first purge gas. For example, the first purge supply unit 123 may be connected to the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and may include a first purge gas supply source and a first purge gas supply line that supplies the first purge gas from the first purge gas supply source to the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, the first purge gas may be a source purge gas (SP) for purging the source gas (or the first process gas), or may be an inert gas, or may include nitrogen (N2), hydrogen (H2), argon (Ar), etc., but the present invention is not particularly limited thereto.

[0047] The second purge supply unit 124 can supply a second purge gas to the multi-station chamber 110, and can be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 to supply the second purge gas, respectively. For example, the second purge supply unit 124 can be connected to the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and can include a second purge gas supply source and a second purge gas supply line that supplies the second purge gas from the second purge gas supply source to the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Here, the second purge gas may be a reactant purge gas (RP) for purging the reactive gas (or the second process gas), or may be the inert gas, or may include nitrogen (N2), hydrogen (H2), argon (Ar), etc., but the present invention is not particularly limited thereto. In this case, the first purge gas and the second purge gas may be the same type of gas or may be different types of gas, and at least their functions and the order of supply (or spraying) corresponding thereto may be different from each other. Meanwhile, the first purge gas and the second purge gas may differ in at least one of the spray amount, spray pressure, and spray speed according to their functions, but the spray amount, spray pressure, and spray speed may all be the same.

[0048] The control unit 130 may control the first gas supply unit 121, the second gas supply unit 122, the first purge supply unit 123, and the second purge supply unit 124 so that the first process gas, the second process gas, the first purge gas, and the second purge gas are respectively supplied separately to different process stations among the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. The control unit 130 may control the first gas supply unit 121, the second gas supply unit 122, the first purge supply unit 123, and the second purge supply unit 124, so that the first process gas, the second process gas, the first purge gas, and the second purge gas may be divided and supplied to different process stations among the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and each of the first process gas, the second process gas, the first purge gas, and the second purge gas may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively.

[0049] That is, as will be described in detail later in the section on the substrate processing method according to another embodiment of the present invention, the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 may be supplied with different gases at the same time (or during the same time period) to perform different processes. Here, the different gases may be the same type but have different functions.

[0050] For example, the first process station 111 may (first) be supplied with the first process gas to perform a process of depositing a first layer (e.g., a source material layer) or a first atomic layer, the second process station 112 may (first) be supplied with the second purge gas to perform a process of purging (the second process gas), the third process station 113 may (first) be supplied with the second process gas to perform a process of depositing a second layer (e.g., a reactant layer) or a second atomic layer, and the fourth process station 114 may (first) be supplied with the first purge gas to perform a process of purging (the first process gas). The substrate processing apparatus 100 of the present invention may perform not only chemical vapor deposition (CVD) but also atomic layer deposition (ALD), and may deposit the first process gas and the second process gas in atomic layer units.

[0051] Therefore, the substrate processing apparatus 100 according to the present invention can supply the plurality of gases (i.e., the first process gas, the second process gas, the first purge gas, and the second purge gas) separately to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 of the multi-station chamber 110, respectively, so that a constant amount of gas can be always supplied into the multi-station chamber 110, and thus the pressure in the multi-station chamber 110 can be controlled to a stable process pressure, and the process pressure in the multi-station chamber 110 can be kept constant (or the same pressure). This can also improve contamination of the multi-station chamber 110 caused by a sudden change in the process pressure in the multi-station chamber 110 due to a change in the gas.

[0052] Conventionally, the same type of gas was supplied simultaneously to multiple process stations in the multi-station chamber 110, and the overall gas (or the gas supplied simultaneously to the multiple process stations) was changed according to an order (or time). As a result, the process pressure in the multi-station chamber 110 changed suddenly due to the (overall) gas change, which caused process residues, particles, etc. to stick to the inner walls of the multi-station chamber 110, making the multi-station chamber 110 prone to contamination.

[0053] However, in the present invention, the process stations to which each gas is supplied are different, and the first process gas, the second process gas, the first purge gas, and the second purge gas can all be supplied into the multi-station chamber 110 under the same spraying conditions (e.g., spraying amount, spraying pressure, spraying speed, etc.), so that the process pressure in the multi-station chamber 110 can be kept constant without abrupt changes in the process pressure in the multi-station chamber 110, and the pressure in the multi-station chamber 110 can be controlled to a stable process pressure. This can improve the problem that the multi-station chamber 110 is easily contaminated due to abrupt changes in the process pressure.

[0054] Here, the second process station 112 may be arranged in a first direction of the first process station 111, the fourth process station 114 may be arranged in a second direction perpendicular to the first direction of the first process station 111, and the third process station 113 may be arranged in a diagonal direction between the first direction and the second direction of the first process station 111. That is, the first process station 111 and the third process station 113 may be arranged in the diagonal direction, the second process station 112 and the fourth process station 114 may be arranged in the diagonal direction, and the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 may be arranged in a clockwise or counterclockwise direction. In this case, when the first process gas and the second process gas are supplied to the first process station 111 and the third process station 113, respectively, the first purge gas and the second purge gas may be supplied to the second process station 112 and the fourth process station 114, respectively, or when the first process gas and the second process gas are supplied to the second process station 112 and the fourth process station 114, respectively, the first purge gas and the second purge gas may be supplied to the first process station 111 and the third process station 113, respectively.

[0055] In this case, the first purge gas and the second purge gas can act as an air curtain in the diagonal direction, and the process station (space) to which the first process gas is supplied and the process station (space) to which the second process gas is supplied can be separated (or divided) without any additional (separate) air curtain components, so that deposition can be performed independently in the process station to which the first process gas is supplied and the process station to which the second process gas is supplied without any influence between them.

[0056] If a process station to which the first process gas is supplied and a process station to which the second process gas is supplied (e.g., the first process station and the third process station, or the second process station and the fourth process station) are arranged (in contact) in the first direction or the second direction, the process station to which the first process gas is supplied and the process station to which the second process gas is supplied may be connected to each other, and the second process gas may affect the process station to which the first process gas is supplied, and the first process gas may affect the process station to which the second process gas is supplied.

[0057] However, in the present invention, when the process station to which the first process gas is supplied and the process station to which the second process gas is supplied are arranged diagonally, the communication between the process station to which the first purge gas is supplied and the process station to which the second purge gas is supplied is blocked by the first purge gas and the second purge gas of the process station to which the first process gas is supplied and the process station to which the second process gas is supplied, so that the process station to which the first process gas is supplied and the process station to which the second process gas is supplied can be isolated (or separated).

[0058] The control unit 130 may control the first gas supply unit 121 to supply the first process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 in this order; control the first purge supply unit 123 to supply the first purge gas to the fourth process station 114, the first process station 111, the second process station 112, and the third process station 113 in this order; control the second gas supply unit 122 to supply the second process gas to the third process station 113, the fourth process station 114, the first process station 111, and the second process station 112 in this order; and control the second purge supply unit 124 to supply the second purge gas to the second process station 112, the third process station 113, the fourth process station 114, and the first process station 111 in this order.

[0059] That is, the first process station 111 may be supplied with gases in the order of the first process gas S, the first purge gas SP, the second process gas R, and the second purge gas RP; the second process station 112 may be supplied with gases in the order of the second purge gas RP, the first process gas S, the first purge gas SP, and the second process gas R; the third process station 113 may be supplied with gases in the order of the second process gas R, the second purge gas RP, the first process gas S, and the first purge gas SP; and the fourth process station 114 may be supplied with gases in the order of the first purge gas SP, the second process gas R, the second purge gas RP, and the first process gas S.

[0060] Therefore, by supplying different gases to each process station at the same time, the amount and / or pressure of the gas supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 can be controlled to be constant, and thus the thickness uniformity of the thin film deposited at each process station can be improved. That is, since the first process gas, the second process gas, the first purge gas, and the second purge gas are each supplied (sequentially) to one process station, the adjustment of the amount and pressure of each gas can be immediately reflected. When the same gas is supplied to two or more process stations at the same time, the amount and / or pressure of the gas supplied to the two or more process stations may be different, and the reflection rate of the adjustment of the amount and pressure of the gas may differ for each process station, and the adjustment of the amount and pressure of the gas may not be reflected smoothly.

[0061] Therefore, the substrate processing apparatus 100 according to the present invention uses the substrate processing method of the present invention in which the first process gas, the second process gas, the first purge gas, and the second purge gas are separately supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and the first process gas, the first purge gas, the second process gas, and the second purge gas are sequentially supplied to each process station, thereby performing different processes in each process station, and thus it is possible to deposit thin films having uniform thicknesses in each process station and improve gas supply efficiency.

[0062] The first gas supply unit 121 may include a first gas reservoir 121a connected to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, respectively, to store the first processing gas and selectively supply the first processing gas to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114. The second gas supply unit 122 may include a second gas reservoir 122a connected to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, respectively, to store the second processing gas and selectively supply the second processing gas to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114. The purge supply unit 123 may include a first purge reservoir 123a connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, to store the first purge gas and selectively supply the first purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, and the second purge supply unit 124 may include a second purge reservoir 124a connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, to store the second purge gas and selectively supply the second purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114.The first gas reservoir 121a is disposed between (or in the middle of) the first process gas supply source and the multi-station chamber 110 to store the first process gas, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and can selectively supply the first process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Through this first gas reservoir 121a, even if the first process gas is repeatedly supplied and cut off (or opened and closed) instantaneously to the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, the spray amount, spray pressure and spray speed can be stably maintained, and the spray amount, spray pressure and spray speed of the first process gas to each of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 can be efficiently controlled.

[0063] For example, the supply and cut-off of the first process gas can be performed by opening and closing a valve, and by opening and closing the valve, the supply and cut-off of the first process gas, as well as the spraying amount, spraying pressure, and spraying speed can be instantly controlled.

[0064] The second gas reservoir 122a may be disposed between the second process gas supply source and the multi-station chamber 110 to store the second process gas, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and may selectively supply the second process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Through this second gas reservoir 122a, even if the second process gas is repeatedly supplied and cut off instantaneously to the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, the spray amount, spray pressure and spray speed can be stably maintained, and the spray amount, spray pressure and spray speed of the second process gas to each of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 can be efficiently controlled.

[0065] For example, the supply and cut-off of the second process gas can be performed by opening and closing a valve, and by opening and closing the valve, the supply and cut-off of the second process gas, as well as the spraying amount, spraying pressure, and spraying speed can be instantly controlled.

[0066] The first purge reservoir 123a may be disposed between the first purge gas supply source and the multi-station chamber 110 to store the first purge gas, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and may selectively supply the first purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Through such a first purge reservoir 123a, even if the first purge gas is repeatedly supplied and cut off instantaneously to the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, the spray amount, spray pressure and spray speed can be stably maintained, and the spray amount, spray pressure and spray speed of the first purge gas to each of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 can be efficiently controlled.

[0067] For example, the supply and cut-off of the first purge gas can be performed by opening and closing a valve, and by opening and closing the valve, the supply and cut-off of the first purge gas, as well as the spraying amount, spraying pressure, and spraying speed can be instantly controlled.

[0068] The second purge reservoir 124a may be disposed between the second purge gas supply source and the multi-station chamber 110 to store the second purge gas, and may be connected to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and may selectively supply the second purge gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. Through such a second purge reservoir 124a, even if the second purge gas is repeatedly supplied and cut off instantaneously to the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, the spray amount, spray pressure and spray speed can be stably maintained, and the spray amount, spray pressure and spray speed of the second purge gas to each of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 can be efficiently controlled.

[0069] For example, the supply and cut-off of the second purge gas can be performed by opening and closing a valve, and by opening and closing the valve, the supply and cut-off of the second purge gas, as well as the spraying amount, spraying pressure, and spraying speed can be instantly controlled.

[0070] Here, the first gas reservoir 121a and the second gas reservoir 122a may be different in size from the first purge reservoir 123a and the second purge reservoir 124a. The first gas reservoir 121a and the second gas reservoir 122a store the first process gas and the second process gas, and the first purge reservoir 123a and the second purge reservoir 124a store the first purge gas and the second purge gas, so that the sizes may be different. As a result, the first purge gas and the second purge gas can effectively function as an air curtain while performing a purge function, and the first process gas and the second process gas can be effectively deposited on the substrate 10 without being affected by the first purge gas and the second purge gas.

[0071] At this time, the first purge reservoir 121a and the second purge reservoir 122a may be smaller (relatively) than the first gas reservoir 123a and the second gas reservoir 124a. By making the first purge reservoir 121a and the second purge reservoir 122a smaller than the first gas reservoir 123a and the second gas reservoir 124a, the blowing amount (per unit time) of the first purge gas and the second purge gas can be reduced, while the blowing pressure and blowing speed (or gas movement speed) of the first purge gas and the second purge gas can be increased. Thus, the high (or large) blowing pressure and high blowing speed of the first purge gas and the second purge gas can effectively play the role of an air curtain, and the process station to which the first process gas is supplied and the process station to which the second process gas is supplied can be effectively separated (or isolated). In addition, due to the high blowing pressure and high blowing speed of the first purge gas and the second purge gas, the first purge gas and the second purge gas can be quickly and immediately exhausted without affecting the process station to which the first process gas is supplied and the process station to which the second process gas is supplied.

[0072] Meanwhile, since the first gas reservoir 123a and the second gas reservoir 124a are (relatively) larger than the first purge reservoir 121a and the second purge reservoir 122a, the amount of the first process gas and the second process gas sprayed (per unit time) is (relatively) larger. As a result, the first purge gas and / or the second purge gas are prevented from invading the areas (or spaces) of the process station to which the first process gas is supplied and the process station to which the second process gas is supplied, thereby securing the deposition space for the first process gas or the second process gas, and the first process gas and the second process gas can be effectively and uniformly deposited on the substrate 10 without being affected by the first purge gas and the second purge gas. In addition, the spray pressure and spray speed of the first process gas and the second process gas can be reduced to prevent the first process gas and the second process gas from being immediately exhausted without reacting (or being deposited) on the surface of the substrate 10.

[0073] The first purge reservoir 121a and the second purge reservoir 122a may have the same size. By making the first purge reservoir 121a and the second purge reservoir 122a have the same size, an air curtain using the first purge gas and the second purge gas can be formed along the diagonal direction, and thus the (process) pressure in the process station to which the first process gas is supplied and the process station to which the second process gas is supplied becomes uniform throughout, and the first process gas and the second process gas can be uniformly deposited over the entire surface of the substrate 10. In this case, the first purge gas and the second purge gas may be the same type of gas, and the spray amount, spray pressure, and spray speed may also be the same.

[0074] Meanwhile, the first gas reservoir 123a and the second gas reservoir 124a may have the same size or different sizes depending on the first and second process gases.

[0075] The first gas supply unit 121 may further include a plurality of first gas valves (not shown) disposed between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and the first gas reservoir 121a. The second gas supply unit 122 may further include a plurality of second gas valves (not shown) disposed between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and the second gas reservoir 122a. The purge supply unit 123 may further include a plurality of first purge valves (not shown) respectively arranged between the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 and the first purge reservoir 123a, and the second purge supply unit 124 may further include a plurality of second purge valves (not shown) respectively arranged between the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 and the second purge reservoir 124a. A plurality of first gas valves (not shown) may be disposed between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and the first gas reservoir 121a. The control unit 130 may control the first gas supply unit 121 to supply the first process gas to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 in this order via the plurality of first gas valves (not shown).

[0076] A plurality of second gas valves (not shown) may be disposed between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and the second gas reservoir 122a. The control unit 130 may control the second gas supply unit 122 so that the second process gas is supplied to the third process station 113, the fourth process station 114, the first process station 111, and the second process station 112 in this order via the plurality of second gas valves (not shown).

[0077] A plurality of first purge valves (not shown) may be disposed between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and the first purge reservoir 123a, and the control unit 130 may control the first purge supply unit 123 so that the first purge gas is supplied to the fourth process station 114, the first process station 111, the second process station 112, and the third process station 113 in this order via the plurality of first purge valves (not shown).

[0078] A plurality of second purge valves (not shown) may be disposed between the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and the second purge reservoir 124a, and the control unit 130 may control the second purge supply unit 124 so that the second purge gas is supplied to the second process station 112, the third process station 113, the fourth process station 114, and the first process station 111 in this order via the plurality of second purge valves (not shown).

[0079] In this case, the substrate processing apparatus 100 according to the present invention may further include a plurality of valve blocks (not shown) on which the first gas valve (not shown), the second gas valve (not shown), the first purge valve (not shown) and the second purge valve (not shown) are supported and which are respectively disposed above the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114.

[0080] A plurality of valve blocks (not shown) may be arranged on the tops of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, respectively, and a first gas valve (not shown), a second gas valve (not shown), a first purge valve (not shown) and a second purge valve (not shown) arranged in the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, respectively, may be supported.

[0081] For example, a plurality of valve blocks (not shown) may be provided near (or adjacent to) the shower heads of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and a first gas valve (not shown), a second gas valve (not shown), a first purge valve (not shown), and a second purge valve (not shown) supported by the valve blocks (not shown) may be directly connected (or communicated) to the (respective) shower heads. Thus, by controlling the plurality of first gas valves (not shown), the plurality of second gas valves (not shown), the plurality of first purge valves (not shown), and the plurality of second purge valves (not shown) via the control unit 130, each gas may be immediately (or immediately) sprayed (or supplied) or stopped (or shut off). That is, by opening and closing the plurality of first gas valves (not shown), the first process gas can be instantly sprayed through the (respective) shower head or spraying can be stopped, by opening and closing the plurality of second gas valves (not shown), the second process gas can be instantly sprayed through the (respective) shower head or spraying can be stopped, by opening and closing the plurality of first purge valves (not shown), the first purge gas can be instantly sprayed through the (respective) shower head or spraying can be stopped, and by opening and closing the plurality of second purge valves (not shown), the second purge gas can be instantly sprayed through the (respective) shower head or spraying can be stopped.

[0082] This makes it possible to suppress or prevent the supply of gas from being interrupted (for a while) (or delayed) by opening and closing the first gas valves (not shown), the second gas valves (not shown), the first purge valves (not shown), and the second purge valves (not shown) accompanying the change of gas. Conventionally, the distance between the (respective) showerhead and each valve was long, so even if the valve was opened, it took time for the gas to be supplied (or moved) from the valve to the (respective) showerhead, and as a result, the gas could not be sprayed from the (respective) showerhead immediately. In addition, even if the valve was closed, the gas still remained between the valve and the (respective) showerhead, and the gas continued to be sprayed until the remaining gas was completely sprayed, which was a problem. However, in the present invention, the plurality of first gas valves (not shown), the plurality of second gas valves (not shown), the plurality of first purge valves (not shown), and the plurality of second purge valves (not shown) can be provided as close as possible to the (respective) shower head via the plurality of valve blocks (not shown), and the first process gas, the second process gas, the first purge gas, and the second purge gas can be instantly sprayed or stopped through the (respective) shower head by opening and closing the plurality of first gas valves (not shown), the plurality of second gas valves (not shown), the plurality of first purge valves (not shown), and the plurality of second purge valves (not shown).

[0083] FIG. 4 is a process flow diagram showing a substrate processing method according to another embodiment of the present invention.

[0084] A substrate processing method according to another embodiment of the present invention will be described in more detail with reference to FIG. 4, and details that overlap with those described above in relation to the substrate processing apparatus according to one embodiment of the present invention will be omitted.

[0085] In another embodiment of the present invention, a substrate processing method using a multi-station chamber 110 including a first processing station 111, a second processing station 112, a third processing station 113, and a fourth processing station 114 in which processes are performed independently, includes a first process (S100) of dividing a plurality of gases and primarily supplying them to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114, respectively, and a second process (S101) of supplying a gas different from that in the first process (S100) to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114. a third process (S300) of dividing the plurality of gases and supplying them in a third order so that a gas different from the gas in the second process (S200) is supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114; and a fourth process (S400) of dividing the plurality of gases and supplying them in a fourth order so that a gas different from the gas in the third process (S300) is supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114.

[0086] First, in the first process (S100), a plurality of gases are divided and primarily supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively (S100). A plurality of gases may be divided and primarily supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and a gas different from that supplied to the other process stations may be supplied to at least one of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114.

[0087] Next, in a second process (S200), the plurality of gases are divided and secondarily supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 so that a gas different from that in the first process (S100) is supplied thereto (S200). The plurality of gases may be divided and supplied secondarily to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 so that a gas different from that in the first process (S100) may be supplied to each of them. A gas different from that in the first process (S100) may be supplied to at least one of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114. A gas different from that in the first process (S100) may be supplied to each of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114.

[0088] Next, in a third process (S300), the plurality of gases are divided and supplied in three stages to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 so that a gas different from that in the second process (S200) is supplied to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 (S300). The plurality of gases may be divided and supplied in three stages so that a gas different from that in the second process (S200) may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. A gas different from that in the second process (S200) may be supplied to at least one of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. A gas different from that in the second process (S200) may be supplied to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. In this case, the gas supplied to each of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 in the third process (S300) may be different from that in the first process (S100) or may be the same as that in the first process (S100), and only needs to be different from that in the second process (S200).

[0089] In the fourth process (S400), the plurality of gases are divided and supplied in four stages to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 so that gases different from those in the third process (S300) are supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 (S400). The plurality of gases may be divided and supplied in four stages so that a gas different from that in the third process (S300) may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. A gas different from that in the third process (S300) may be supplied to at least one of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. A gas different from that in the third process (S300) may be supplied to each of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. In this case, the gas supplied to each of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 in the fourth process (S400) may be different from that in the first process (S100) and / or the second process (S200), or may be the same as that in the first process (S100) and / or the second process (S200), and only needs to be different from that in the third process (S300).

[0090] FIG. 5 is a conceptual diagram for explaining the supply of gas to each process station over time according to another embodiment of the present invention.

[0091] 5, the plurality of gases may include a first process gas, a second process gas different from the first process gas, a first purge gas, and a second purge gas. The first process gas may be a source gas (S) or may include titanium tetrachloride (TiCl4) and dichlorosilane (DCS, SiH2Cl2), etc.

[0092] The second process gas may be different from the first process gas, may be a reactant gas (R) that reacts with the source gas, or may include ammonia (NH3) and hydrogen (H2), etc.

[0093] The first purge gas may be a source purge gas (SP) that purges the first process gas, or may be an inert gas, or may include nitrogen (N2), hydrogen (H2), argon (Ar), etc., but the present invention is not particularly limited thereto.

[0094] The second purge gas may be a reactant purge gas (RP) that can purge the second process gas and purge the reactant gas, or may be an inert gas, or may include nitrogen (N2), hydrogen (H2), argon (Ar), etc., but the present invention is not particularly limited thereto. In this case, the first purge gas and the second purge gas may be the same type of gas or may be different types of gas, and at least their functions and the order of supply (or spraying) corresponding thereto may be different from each other. Meanwhile, the first purge gas and the second purge gas may be different in at least one of the spray amount, spray pressure, and spray speed according to their functions, but the spray amount, spray pressure, and spray speed may all be the same.

[0095] In this case, when the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 are arranged in a clockwise direction, the first processing gas may be supplied in the order of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 in a clockwise direction, and the second processing gas, the first purge gas, and the second purge gas may also be supplied in a clockwise direction along the arrangement direction of the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114. When the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 are arranged in a counterclockwise direction, the first process gas may be supplied in the order of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 in a counterclockwise direction, and the second process gas, the first purge gas and the second purge gas may also be supplied in a counterclockwise direction along the arrangement direction of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114.

[0096] Meanwhile, the arrangement direction of the processing stations to which the first process gas, the first purge gas, the second process gas, and the second purge gas are respectively supplied in each process may be opposite to the arrangement direction of the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114. When the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 are arranged in a clockwise direction, the processing stations to which the first process gas, the first purge gas, the second process gas, and the second purge gas are respectively supplied may be arranged in a counterclockwise direction. When the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114 are arranged in a counterclockwise direction, the processing stations to which the first process gas, the first purge gas, the second process gas, and the second purge gas are respectively supplied may be arranged in a clockwise direction.

[0097] Here, the first process (S100) may include a process (S110) of supplying the first process gas, the second purge gas, the second process gas, and the first purge gas to a first process station 111, a second process station 112, a third process station 113, and a fourth process station 114, respectively, and the second process (S200) may include a process (S210) of supplying the first purge gas, the first process gas, the second purge gas, and the second process gas to the first process station 111, the second process station 112, the third process station 113, and a fourth process station 114, respectively. Alternatively, the third step (S300) may include a step (S310) of supplying the second process gas, the first purge gas, the first process gas and the second purge gas to the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, respectively, and the fourth step (S400) may include a step (S410) of supplying the second purge gas, the second process gas, the first purge gas and the first process gas to the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, respectively.

[0098] The first process gas, the second purge gas, the second process gas, and the first purge gas may be supplied to a first process station 111, a second process station 112, a third process station 113, and a fourth process station 114, respectively (S110). The first process gas, the second purge gas, the second process gas, and the first purge gas may be (first) supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and different gases may be supplied to each process station.

[0099] The first purge gas, the first process gas, the second purge gas, and the second process gas may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively (S210). The first purge gas, the first process gas, the second purge gas, and the second process gas may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and different gases may be supplied to each process station.

[0100] Then, the second process gas, the first purge gas, the first process gas, and the second purge gas may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively (S310). The second process gas, the first purge gas, the first process gas, and the second purge gas may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and different gases may be supplied to each process station.

[0101] The second purge gas, the second process gas, the first purge gas, and the first process gas may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively (S410). The second purge gas, the second process gas, the first purge gas, and the first process gas may be supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and different gases may be supplied to each process station.

[0102] That is, the first process station 111 may be supplied with gases in the order of the first process gas S, the first purge gas SP, the second process gas R, and the second purge gas RP; the second process station 112 may be supplied with gases in the order of the second purge gas RP, the first process gas S, the first purge gas SP, and the second process gas R; the third process station 113 may be supplied with gases in the order of the second process gas R, the second purge gas RP, the first process gas S, and the first purge gas SP; and the fourth process station 114 may be supplied with gases in the order of the first purge gas SP, the second process gas R, the second purge gas RP, and the first process gas S.

[0103] Therefore, by supplying different gases to each processing station at the same time, it is possible to control the amount and / or pressure of the gas supplied to the first processing station 111, the second processing station 112, the third processing station 113, and the fourth processing station 114 to be constant, thereby improving the thickness uniformity of the thin film deposited at each processing station. That is, since the first processing gas, the second processing gas, the first purge gas, and the second purge gas are each supplied (sequentially) to one processing station, the adjustment of the amount and pressure of each gas can be immediately reflected. When the same type of gas is supplied to two or more processing stations at the same time, the amount and / or pressure of the gas supplied to the two or more processing stations may be different, and the reflection rate of the adjustment of the amount and pressure of the gas may differ for each processing station, and the adjustment of the amount and pressure of the gas may not be smoothly reflected.

[0104] Therefore, in the substrate processing method according to the present invention, the first process gas, the second process gas, the first purge gas, and the second purge gas are separately supplied to the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114, respectively, and the first process gas, the first purge gas, the second process gas, and the second purge gas are sequentially supplied to each process station, thereby allowing different processes to be performed in each process station. As a result, thin films having uniform thicknesses can be deposited in each process station, and gas supply efficiency can be improved.

[0105] Here, the second process station 112 may be arranged in a first direction of the first process station 111, the fourth process station 114 may be arranged in a second direction perpendicular to the first direction of the first process station 111, and the third process station 113 may be arranged in a diagonal direction between the first direction and the second direction of the first process station 111. That is, the first processing station 111 and the third processing station 113 may be disposed diagonally opposite to each other, and the second processing station 112 and the fourth processing station 114 may be disposed diagonally opposite to each other. When the first processing gas and the second processing gas are supplied to the first processing station 111 and the third processing station 113, respectively, the first purge gas and the second purge gas may be supplied to the second processing station 112 and the fourth processing station 114, respectively. When the first processing gas and the second processing gas are supplied to the second processing station 112 and the fourth processing station 114, respectively, the first purge gas and the second purge gas may be supplied to the first processing station 111 and the third processing station 113, respectively.

[0106] In this case, the first purge gas and the second purge gas can act as an air curtain in the diagonal direction, and the process station (space) to which the first process gas is supplied and the process station (space) to which the second process gas is supplied can be separated (or divided), and deposition can be performed independently in the process station to which the first process gas is supplied and the process station to which the second process gas is supplied without any influence between each other.

[0107] If a process station to which the first process gas is supplied and a process station to which the second process gas is supplied (e.g., the first process station and the third process station, or the second process station and the fourth process station) are arranged (in contact) in the first direction or the second direction, the process station to which the first process gas is supplied and the process station to which the second process gas is supplied may be connected to each other, and the second process gas may affect the process station to which the first process gas is supplied, and the first process gas may affect the process station to which the second process gas is supplied.

[0108] However, in the present invention, when the process station to which the first process gas is supplied and the process station to which the second process gas is supplied are arranged in the diagonal direction, the communication between them is blocked by the first purge gas and the second purge gas of the process station to which the first purge gas is supplied and the process station to which the second purge gas is supplied, so that the process station to which the first process gas is supplied and the process station to which the second process gas is supplied can be isolated (or separated).

[0109] In this case, the first process gas and the second process gas may be different from the first purge gas and the second purge gas in at least one of the spray amount, spray pressure, and spray speed in the first step (S100), the second step (S200), the third step (S300), and the fourth step (S400). By making at least one of the spray amount (per unit time), spray pressure, and spray speed (or gas movement speed) of the first process gas and the second process gas in the first process (S100), the second process (S200), the third process (S300), and the fourth process (S400) different from that of the first purge gas and the second purge gas, the first purge gas and the second purge gas can effectively perform the role of an air curtain while performing the role of purging, and the first process gas and the second process gas can be effectively deposited on the substrate 10 without being influenced by the first purge gas and the second purge gas.

[0110] For example, due to the difference in size between the first gas reservoir 121a and the second gas reservoir 122a, and between the first purge reservoir 123a and the second purge reservoir 124a, at least one of the spray amount, spray pressure, and spray speed of the first process gas and the second process gas may be made different from that of the first purge gas and the second purge gas.

[0111] In addition, at least one of the spray amount, spray pressure, and spray speed of the first purge gas and the second purge gas may be the same in the first step (S100), the second step (S200), the third step (S300), and the fourth step (S400). By making at least one of the spray amount, spray pressure, and spray speed of the first purge gas and the second purge gas the same in the first step (S100), the second step (S200), the third step (S300), and the fourth step (S400), an air curtain using the first purge gas and the second purge gas can be formed along the diagonal direction, so that the (process) pressure in the process station to which the first process gas is supplied and the process station to which the second process gas is supplied becomes uniform throughout, and the first process gas and the second process gas can be uniformly deposited over the entire surface of the substrate 10. For example, by making the sizes of the first purge reservoir 121a and the second purge reservoir 122a the same, at least one of the spray amount, spray pressure, and spray speed of the first purge gas and the second purge gas can be made the same.

[0112] Meanwhile, the first step (S100) to the fourth step (S400) may be one cycle, or the first step (S100) to the fourth step (S400) may be sequentially (or the cycle) repeated according to a desired deposition thickness. In this case, the substrate processing method of the present invention may further include a step (S450) of supplying the first purge gas and / or the second purge gas to at least the second process station 112 and the fourth process station 114 among the first process station 111, the second process station 112, the third process station 113, and the fourth process station 114.

[0113] The first purge gas and / or the second purge gas can be supplied to at least the second process station 112 and the fourth process station 114 among the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114 (S450). After repeating the cycle a required number of times (n), the first purge gas and / or the second purge gas can be supplied to at least the second process station 112 and the fourth process station 114 among the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114. In the cycle, the process is completed by the first process gas and the second process gas at the fourth process station 114 and the second process station 112, respectively. As a result, purging of the second process gas and purging of the first process gas are not performed at the second process station 112 and the fourth process station 114, and as a result, residual gas (residue) of the second process gas and residual gas (residue) of the first process gas may remain. Therefore, by supplying the first purge gas and / or the second purge gas to at least the second process station 112 and the fourth process station 114 among the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114, the residual gas of the second process gas can be removed from the second process station 112, and the residual gas of the first process gas can be removed from the fourth process station 114.

[0114] On the other hand, when the first purge gas and / or the second purge gas are supplied only to the second process station 112 and the fourth process station 114, the residual gas (residue) of the second process gas and the residual gas (residue) of the first process gas may spread to the first process station 111 and / or the third process station 113 due to the pressure difference between each process station. Therefore, it is preferable to supply the first purge gas and / or the second purge gas to all of the first process station 111, the second process station 112, the third process station 113 and the fourth process station 114.

[0115] In this manner, in the present invention, a constant amount of gas can be constantly supplied to the multi-station chamber by dividing and supplying a plurality of gases to the first, second, third and fourth process stations of the multi-station chamber, respectively, thereby making it possible to control a stable process pressure in the multi-station chamber and to improve contamination of the multi-station chamber caused by a sudden change in process pressure in the multi-station chamber due to a change in gas. In addition, since it is possible to control the amount and / or pressure of gas supplied to the first, second, third and fourth process stations to a constant amount, it is also possible to improve the thickness uniformity of the thin film deposited in each process station. That is, the first process gas, the second process gas, the first purge gas, and the second purge gas are separately supplied to the first process station, the second process station, the third process station, and the fourth process station, respectively, and the first process gas, the first purge gas, the second process gas, and the second purge gas are sequentially supplied to each process station, so that different processes can be performed at each process station, and thus a thin film having a uniform thickness can be deposited at each process station, and gas supply efficiency can be improved. Also, the first process gas, the first purge gas, the second process gas, and the second purge gas can be sequentially supplied to deposit a thin film by atomic layer deposition, and the supply of the first process gas, the first purge gas, the second process gas, and the second purge gas can be precisely controlled, so that a thin film can be uniformly deposited on the entire surface of the substrate in atomic layer units.

[0116] Although the preferred embodiment of the present invention has been illustrated and described above, the present invention is not limited to the above embodiment, and it should be understood that various modifications can be made thereto and equivalent other embodiments can be adopted by those skilled in the art without departing from the gist of the present invention as claimed in the claims. Therefore, the technical scope of protection of the present invention should be determined by the appended claims. [Explanation of symbols]

[0117] 10 Substrate 100 Substrate processing apparatus 110 Multi-Station Chamber 111 First process station 111a First Shower Head 111b First substrate support 112 Second Process Station 112a Second shower head 112b Second substrate support 113 3rd process station 114 4th process station 120 Gas supply section 121 First gas supply unit 121a First Gas Reservoir 122 Second gas supply unit 122a Secondary Gas Reservoir 123 First purge supply section 123a First purge reservoir 124 Second purge supply section 124a Second purge reservoir 130 Control section

Claims

1. a multi-station chamber including a first process station, a second process station, a third process station, and a fourth process station for independently carrying out processes, and capable of carrying out processes on a plurality of substrates; a gas supply unit for dividing and supplying a plurality of gases to the first process station, the second process station, the third process station, and the fourth process station, respectively; a control unit that controls the gas supply unit to switch the gases supplied to the first process station, the second process station, the third process station, and the fourth process station so that the plurality of gases are sequentially supplied to the first process station, the second process station, the third process station, and the fourth process station; The substrate processing apparatus includes:

2. The gas supply unit includes: a first gas supply unit for supplying a first process gas to the multi-station chamber; a second gas supply unit for supplying a second process gas different from the first process gas to the multi-station chamber; a first purge supply unit that supplies a first purge gas to the multi-station chamber; a second purge supply unit that supplies a second purge gas to the multi-station chamber; The substrate processing apparatus of claim 1 .

3. 3. The substrate processing apparatus of claim 2, wherein the control unit controls the first gas supply unit, the second gas supply unit, the first purge supply unit, and the second purge supply unit so that the first process gas, the second process gas, the first purge gas, and the second purge gas are respectively supplied to different process stations among the first process station, the second process station, the third process station, and the fourth process station.

4. the second process station is disposed in a first direction of the first process station; the fourth process station is disposed in a second direction perpendicular to the first direction of the first process station; The substrate processing apparatus of claim 3 , wherein the third process station is disposed in a diagonal direction between the first direction and the second direction of the first process station.

5. The control unit is controlling the first gas supply unit to supply the first process gas to the first process station, the second process station, the third process station, and the fourth process station in this order; controlling the first purge supply unit to supply the first purge gas to the fourth process station, the first process station, the second process station, and the third process station in this order; controlling the second gas supply unit to supply the second process gas to the third process station, the fourth process station, the first process station, and the second process station in this order; 5. The substrate processing apparatus of claim 4, wherein the second purge supply unit is controlled to supply the second purge gas to the second process station, the third process station, the fourth process station, and the first process station in that order.

6. the first gas supply unit includes a first gas reservoir connected to the first process station, the second process station, the third process station, and the fourth process station, respectively, for storing the first process gas and selectively supplying the first process gas to the first process station, the second process station, the third process station, and the fourth process station; the second gas supply unit includes a second gas reservoir connected to the first process station, the second process station, the third process station, and the fourth process station, respectively, for storing the second process gas and selectively supplying the second process gas to the first process station, the second process station, the third process station, and the fourth process station; the first purge supply unit includes a first purge reservoir connected to the first process station, the second process station, the third process station, and the fourth process station, respectively, for storing the first purge gas and selectively supplying the first purge gas to the first process station, the second process station, the third process station, and the fourth process station; 3. The substrate processing apparatus according to claim 2, wherein the second purge supply unit comprises a second purge reservoir connected to the first process station, the second process station, the third process station, and the fourth process station, respectively, for storing the second purge gas and selectively supplying the second purge gas to the first process station, the second process station, the third process station, and the fourth process station.

7. The substrate processing apparatus of claim 6 , wherein the first gas reservoir and the second gas reservoir are different in size than the first purge reservoir and the second purge reservoir.

8. The substrate processing apparatus of claim 7 , wherein the first purge reservoir and the second purge reservoir are smaller than the first gas reservoir and the second gas reservoir.

9. The substrate processing apparatus of claim 6 , wherein the first purge reservoir and the second purge reservoir are the same size.

10. the first gas supply unit further includes a plurality of first gas valves disposed between the first process station, the second process station, the third process station, and the fourth process station and the first gas reservoir, respectively; the second gas supply unit further includes a plurality of second gas valves disposed between the first process station, the second process station, the third process station, and the fourth process station and the second gas reservoir, respectively; the first purge supply unit further includes a plurality of first purge valves disposed between the first process station, the second process station, the third process station, and the fourth process station and the first purge reservoir, respectively; 7. The substrate processing apparatus of claim 6, wherein the second purge supply unit further comprises a plurality of second purge valves respectively disposed between the first process station, the second process station, the third process station, and the fourth process station and the second purge reservoir.

11. 11. The substrate processing apparatus of claim 10, further comprising a plurality of valve blocks on which the first gas valve, the second gas valve, the first purge valve and the second purge valve are supported and which are disposed above the first process station, the second process station, the third process station and the fourth process station, respectively.

12. 1. A substrate processing method using a multi-station chamber including a first process station, a second process station, a third process station, and a fourth process station in which processes are performed independently, comprising: a first process of dividing a plurality of gases and primarily supplying the divided gases to the first process station, the second process station, the third process station, and the fourth process station, respectively; a second process of dividing the plurality of gases and supplying them secondarily to the first process station, the second process station, the third process station, and the fourth process station such that a gas different from that in the first process is supplied to each of the first process station, the second process station, the third process station, and the fourth process station; a third process of dividing the plurality of gases and supplying them in a third order to supply a gas different from that in the second process to the first process station, the second process station, the third process station, and the fourth process station; a fourth process of dividing the plurality of gases and supplying them in a fourth order to supply a gas different from that in the third process to the first process station, the second process station, the third process station, and the fourth process station; A method for processing a substrate, comprising:

13. the plurality of gases include a first process gas, a second process gas different from the first process gas, a first purge gas, and a second purge gas; the first process includes supplying the first process gas, the second purge gas, the second process gas, and the first purge gas to the first process station, the second process station, the third process station, and the fourth process station, respectively; the second process includes supplying the first purge gas, the first process gas, the second purge gas, and the second process gas to the first process station, the second process station, the third process station, and the fourth process station, respectively; the third process includes supplying the second process gas, the first purge gas, the first process gas, and the second purge gas to the first process station, the second process station, the third process station, and the fourth process station, respectively; 13. The substrate processing method of claim 12, wherein the fourth process includes supplying the second purge gas, the second process gas, the first purge gas, and the first process gas to the first process station, the second process station, the third process station, and the fourth process station, respectively.

14. the second process station is disposed in a first direction of the first process station; the fourth process station is disposed in a second direction perpendicular to the first direction of the first process station; 14. The method of claim 13, wherein the third process station is disposed diagonally between the first direction and the second direction of the first process station.

15. 15. The substrate processing method of claim 14, wherein the first process gas and the second process gas are different from the first purge gas and the second purge gas in at least one of a spray amount, a spray pressure, and a spray speed in the first process, the second process, the third process, and the fourth process.

16. 15. The substrate processing method of claim 14, wherein at least one of the spraying amount, spraying pressure, and spraying speed of the first purge gas and the second purge gas is the same in the first process, the second process, the third process, and the fourth process.

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