Member, method for producing member and semiconductor production-related device

Abstract

To provide a member excellent in chemical resistance, a method for producing the member and a semiconductor production-related device.SOLUTION: There is provided a member in which at least a part of the surface of a material (a) is laminated with a barrier material having an aromatic ring, wherein the member is at least one selected from the group consisting of a building material member, a mobility member, an aerospace member, a semiconductor member and an information communication member.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a component, a method for manufacturing the component, and a semiconductor manufacturing-related device. [Background technology]

[0002] BACKGROUND ART Techniques have been proposed for coating substrates in semiconductor manufacturing equipment to prevent contamination, etc. (see, for example, Patent Documents 1 to 3). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-21369 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-239151 [Patent Document 3] Japanese Patent Application Laid-Open No. 2011-23563 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment. [Means for solving the problem]

[0005] The present disclosure (1) provides a member in which at least a portion of the surface of a material (a) is laminated with a barrier material having an aromatic ring, The component is at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials.

[0006] The present disclosure (2) is the member according to the present disclosure (1), wherein the aromatic content of the aromatic ring-containing barrier material (the proportion of carbon atoms in the molecule that constitute the aromatic ring) is 20% or more.

[0007] The present disclosure (3) is the member according to the present disclosure (1) or (2), wherein the aromatic ring-containing barrier material is at least one selected from the group consisting of a compound represented by the following formula (a), a compound represented by the following formula (b), and a compound represented by the following formula (c): [ka] [ka] [ka] (In the formula, X 1 ~X 4 Y each independently represents hydrogen, halogen, a monovalent hydrocarbon group, or an optionally fluorinated alkoxy group. 1 ~Y 4 each independently represents hydrogen or halogen, and n represents an integer of 1 or greater.

[0008] The present disclosure (4) is a component that can be arbitrarily combined with any of the present disclosures (1) to (3), in which the barrier material having an aromatic ring is at least one selected from the group consisting of polyparaxylene and polyparaxylene having a halogen introduced on the benzene ring.

[0009] The present disclosure (5) is a member of any combination with any of the present disclosures (1) to (3), in which the barrier material having an aromatic ring is at least one selected from the group consisting of a polymer represented by the following formula (1), a polymer represented by the following formula (2), and a polymer represented by the following formula (5). [ka] [ka] [ka]

[0010] The present disclosure (6) is a member of any combination with any of the present disclosures (1) to (3), in which the barrier material having an aromatic ring is at least one selected from the group consisting of a polymer represented by the following formula (2) and a polymer represented by the following formula (5): [ka] [ka]

[0011] The present disclosure (7) is a member in any combination with any of the present disclosures (1) to (6), wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal, and ceramic.

[0012] The present disclosure (8) is a member in any combination with any of the present disclosures (1) to (7), wherein the material (a) is at least one selected from the group consisting of resin and rubber.

[0013] The present disclosure (9) is a member of any combination with any of the present disclosures (1) to (8), wherein the material (a) is at least one selected from the group consisting of polyphenylene sulfide, polyetherimide resin, and polyether ether ketone resin.

[0014] The present disclosure (10) is a member of any combination with any of the present disclosures (1) to (9), wherein the material (a) has a temperature of 560° C. or less when it loses 1% by mass through thermal decomposition.

[0015] The present disclosure (11) is a member in any combination with any of the present disclosures (1) to (10), wherein the coating containing the barrier material having an aromatic ring has a thickness of 0.01 to 100 μm.

[0016] The present disclosure (12) is a member in any combination with any of the present disclosures (1) to (11), wherein the coating containing the barrier material having an aromatic ring has a thickness of 1 to 50 μm.

[0017] The present disclosure (13) is a component in any combination with any of the present disclosures (1) to (12), wherein the component is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

[0018] The present disclosure (14) is a member that can be arbitrarily combined with any of the present disclosures (1) to (13), in which the member is a member for semiconductor manufacturing related equipment.

[0019] The present disclosure (15) is the member according to the present disclosure (14), wherein the semiconductor manufacturing related device is a device in which a chemical is used.

[0020] The present disclosure (16) relates to a compound in which the chemical is TMAH([(CH3)4N] + [OH] - ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, H2O2, and H2O), SC2 (a mixture of HCl, H2O2, and H2O), phosphoric acid, and hydrochloric acid.

[0021] The present disclosure (17) is the member according to the present disclosure (15), wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0022] The semiconductor manufacturing-related equipment member of the present disclosure (18) is a member of any combination with any of the present disclosures (14) to (17), in which at least a part of the surface that comes into contact with the chemical is laminated with the barrier material having the aromatic ring.

[0023] The semiconductor manufacturing related equipment component of the present disclosure (19) is a semiconductor manufacturing related equipment component in which chemicals are used within the equipment, and is a component in any combination with any of the present disclosures (14) to (18), in which at least a part of the surface that comes into contact with the chemicals is laminated with the barrier material.

[0024] The present disclosure (20) is a member in any combination with any of the present disclosures (1) to (19), in which the mass change rate in the following chemical resistance evaluation is 70.0 mass % or less. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) or a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration), and kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0025] The present disclosure (21) is a member that can be arbitrarily combined with any of the present disclosures (1) to (20) and has a mass change rate of 70.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in SPM (a mixture of concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 2:1) and left at room temperature (20°C) for one day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0026] The present disclosure (22) is a member that can be arbitrarily combined with any of the present disclosures (1) to (21) and has a mass change rate of 70.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in concentrated sulfuric acid (98%) and kept at 90°C for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0027] The present disclosure (23) is a member that can be arbitrarily combined with any of the present disclosures (1) to (22) and has a mass change rate of 70.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece was treated with TMAH([(CH3)4N] + [OH] -) (25% concentration), completely immersed in 80°C and kept for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0028] The present disclosure (24) is a method for manufacturing a member in any combination with any of the present disclosures (1) to (23), in which the member is manufactured under conditions of a temperature at which the material (a) loses 1% by mass due to thermal decomposition or lower.

[0029] The present disclosure (25) is a method for producing a member according to the present disclosure (24), comprising a step of coating the surface of the material (a) with the barrier material having an aromatic ring by using CVD, sputtering, ion deposition, or vacuum deposition.

[0030] The present disclosure (26) is a semiconductor manufacturing-related device equipped with any combination of members of the present disclosures (1) to (23).

[0031] The present disclosure (27) is a semiconductor manufacturing related device of the present disclosure (26), which is at least one selected from the group consisting of semiconductor manufacturing devices and devices related to semiconductor manufacturing devices.

[0032] The present disclosure (28) is directed to the semiconductor manufacturing apparatus, wherein the semiconductor manufacturing apparatus is at least one selected from the group consisting of thin film formation / etching / cleaning / drying apparatus, inspection / evaluation apparatus / manufacturing apparatus, wafer processing apparatus, resist processing apparatus, etching apparatus, cleaning / drying apparatus, heat treatment apparatus, CVD apparatus, sputtering apparatus, thin film formation apparatus, inspection / evaluation apparatus, processing apparatus, dicing apparatus, bonding apparatus, packaging apparatus, testing apparatus, probing apparatus, handler, aging apparatus, and inspection apparatus; The semiconductor manufacturing related equipment of the present disclosure (27) is at least one selected from the group consisting of a conveying device, a pure water / chemical device, a gas device, a clean room device, and a manufacturing related device.

[0033] The present disclosure (29) is directed to the thin film formation / etching / cleaning / drying apparatus, which is at least one selected from the group consisting of a vacuum deposition apparatus, a sputtering apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus, The inspection and evaluation device and manufacturing device are defect repair devices, the wafer processing device is a wafer marking device, the resist treatment device is at least one selected from the group consisting of a coating device, a developing device, a resist stripping device, an ashing device, and a baking device; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus, the cleaning / drying device is at least one selected from the group consisting of a dry cleaning device, a wet cleaning device, a scrub cleaning device, and a drying device; the heat treatment device is at least one selected from the group consisting of an oxidation device, a diffusion device, and an annealing device; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, an SACVD apparatus, a low-pressure CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the inspection and evaluation device is an Auger electron spectroscopy device, the processing device is at least one selected from the group consisting of a wafer marking device, a back grinding machine, a bump plating device, a tape application machine for a back grinder, a back grinder, and a tape peeling machine for a back grinder; The dicing device is at least one selected from the group consisting of a dicing device and a wafer mounting device, the bonding apparatus is at least one selected from the group consisting of a die bonding apparatus, a hybrid bonding apparatus, a wire bonding apparatus, an inner lead bonding apparatus, an outer lead bonding apparatus, and a flip chip bonding apparatus; the packaging device is at least one selected from the group consisting of a molding device, a deburring device, and a soldering device; the testing device is at least one selected from the group consisting of an electron beam testing device and a laser beam testing device, the prober is a prober; the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC extraction device; the inspection device is at least one selected from the group consisting of a thermal testing device, a temperature and humidity testing device, a pressure cooker device, a laser processing system, and a life testing device; the transport device is a stocker, the pure water / chemical device is at least one selected from the group consisting of a pure water production device, an ultrafiltration device, a reverse osmosis device, a sterilization device, a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device; The gas device is at least one selected from the group consisting of a gas generator, a gas purifier, a gas mixer, a gas detector, and an exhaust gas treatment device; the clean room equipment is at least one selected from the group consisting of a clean bench, a clean tunnel, an environmental testing device, an air shower, and a pass box; The manufacturing-related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a taping device, a packaging device, and a measuring device for liquids and gases in the semiconductor manufacturing-related equipment of the present disclosure (28). [Effects of the Invention]

[0034] According to the present disclosure, it is possible to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment. DETAILED DESCRIPTION OF THE INVENTION

[0035] The present disclosure will be specifically described below.

[0036] The present disclosure relates to a member in which at least a portion of the surface of a material (a) is laminated with a barrier material having an aromatic ring, and the member is at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials. The member of the present disclosure has excellent chemical resistance and adhesion.

[0037] In the member of the present disclosure, at least a portion of the surface of material (a) is laminated with a barrier material having an aromatic ring.

[0038] The material (a) is not particularly limited, and known organic materials, inorganic materials, etc. can be used, and specific examples include resins, rubbers, metals, ceramics, etc. The material (a) is preferably at least one selected from the group consisting of resins, rubbers, metals, and ceramics, and more preferably at least one selected from the group consisting of resins and rubbers.

[0039] The resin is not particularly limited, and known resins can be used. Examples include polyolefin resins, polyester resins, polyamide (PA) resins, fluororesins, etc. Heat-resistant resins such as engineering plastic resins and super engineering plastic resins can also be suitably used.

[0040] As the resin, from the viewpoint of improving adhesion to a barrier material having an aromatic ring, a non-fluorine-containing resin (a resin that does not contain fluorine) or a heat-resistant resin is preferred, and a heat-resistant resin that does not contain fluorine is more preferred.

[0041] The heat-resistant resin may be any resin that is generally recognized as having heat resistance, but it is preferable to use a heat-resistant resin other than a fluorine-containing ethylenic polymer (an ethylenic polymer containing fluorine). In this specification, "heat resistance" means the property of being able to be used continuously at temperatures of 150°C or higher.

[0042] Examples of the heat-resistant resin include polyamideimide resin (PAI), polyimide resin (PI), polyethersulfone resin (PES), polyetherimide resin (PEI), aromatic polyetherketone resin (PAEK), aromatic polyester resin, and polyarylene sulfide resin (PAS), and one type may be used alone or two or more types may be used in combination.

[0043] PAI is a resin made of a polymer having amide and imide bonds in its molecular structure. The PAI is not particularly limited, and examples include resins made of high-molecular-weight polymers obtained by various reactions, such as the reaction of an aromatic diamine having an amide bond in its molecule with an aromatic tetracarboxylic acid such as pyromellitic acid; the reaction of an aromatic tricarboxylic acid such as trimellitic anhydride with a diamine such as 4,4-diaminophenyl ether or a diisocyanate such as diphenylmethane diisocyanate; and the reaction of a dibasic acid having an aromatic imide ring in its molecule with a diamine. From the viewpoint of excellent heat resistance, the PAI is preferably made of a polymer having an aromatic ring in its main chain. PAI features include high thermal stability, abrasion resistance, and creep resistance that is resistant to deformation even under load. Furthermore, it is thermoplastic and has excellent melt processability, allowing it to be molded by extrusion or compression molding. Furthermore, the MFR (melt flow rate) is preferably in the range of 10 to 80 g / 10 min.

[0044] PI is a resin made of a polymer having an imide bond in its molecular structure. The PI is not particularly limited, and examples include resins made of high-molecular-weight polymers obtained by the reaction of aromatic tetracarboxylic anhydrides such as pyromellitic anhydride. From the viewpoint of excellent heat resistance, the PI is preferably made of a polymer having an aromatic ring in the main chain. PIs are characterized by high heat resistance, insulating properties, low dielectric constant, low dielectric loss, radiation resistance, etc., and are classified into non-thermoplastic polyimides, thermoplastic polyimides, thermosetting polyimides, and soluble polyimides. Furthermore, the MFR (melt flow rate) is preferably in the range of 0.1 to 50 g / 10 min.

[0045] PES has the following general formula:

[0046] [ka]

[0047] It is a resin made of a polymer having a repeating unit represented by the formula: PES is not particularly limited, and examples thereof include resins made of a polymer obtained by polycondensation of dichlorodiphenyl sulfone and bisphenol. PES is characterized by being an amorphous plastic with a high heat resistance, a glass transition temperature (Tg) of 225°C, and in addition to high heat resistance, it has excellent properties such as dimensional stability, high fluidity, and flame retardancy, and is used in a wide range of industrial fields, such as housings for electric and electronic components and automotive parts. In addition, the MFR (melt flow rate) is preferably in the range of 5 to 60 g / 10 min.

[0048] PEI can be, for example, one having an imide bond and an ether bond within the molecule. The glass transition temperature of PEI is preferably 180°C or higher, more preferably 200°C or higher, and preferably 300°C or lower, more preferably 280°C or lower. PEI is an amorphous super engineering plastic that, in addition to high heat resistance, has excellent flame retardancy, mechanical strength, electrical insulation, radiation resistance, UV resistance, and moldability. It is also used in a wide range of industrial applications, including aircraft parts, various insulation components, food manufacturing equipment, steam cleaning equipment, medical equipment (steam resistance), electrical and electronic components (sonnet connectors, etc.), office automation equipment parts, and automotive lights (heat resistance and good plating properties). The melt flow rate (MFR) is preferably in the range of 1 to 30 g / 10 min.

[0049] The aromatic polyetherketone resin is a resin containing a repeating unit composed of an arylene group, an ether group [-O-], and a carbonyl group [-C(=O)-]. Examples of the aromatic polyetherketone resin include polyetherketone resin (PEK), polyetheretherketone resin (PEEK), polyetherketoneketone resin (PEKK), polyetheretherketoneketone resin (PEEKK), and polyetherketoneester resin. The aromatic polyetherketone resins can be used alone or in combination of two or more. The aromatic polyether ketone resin is preferably at least one selected from the group consisting of PEK, PEEK, PEKK, PEEKK, and polyether ketone ester resins, more preferably at least one selected from the group consisting of PEEK and PEKK, and even more preferably PEEK. PEEK has a high continuous use temperature of 260°C and excellent heat resistance, hot water resistance, flame retardancy, mechanical properties, and electrical properties, and is used in the fields of aerospace, automobiles, medical devices, 3D printers, food, and semiconductors. Furthermore, the MFR (melt flow rate) is preferably in the range of 1 to 20 g / 10 min.

[0050] PAS has the following general formula:

[0051] [ka]

[0052] (wherein Ar represents an arylene group). The PAS is a resin made of a polymer having a repeating unit represented by the formula: (wherein Ar represents an arylene group). The PAS is not particularly limited, and examples thereof include polyphenylene sulfide (PPS). PPS is characterized by being a thermoplastic resin with a normal heat resistance temperature of 220 to 240°C and cold resistance down to -20°C. It has excellent fatigue properties and creep resistance, and also has good weather resistance and hydrolysis resistance. It is a flame-retardant material without the addition of a flame retardant, and also has heat shock resistance. It also has good moldability and a high degree of freedom in the shape of molded products, so it is used in the electrical and electronic parts field for connectors, various electronic parts, and automotive parts. Furthermore, the MFR (melt flow rate) is preferably in the range of 10 to 50 g / 10 min.

[0053] The heat-resistant resin is preferably at least one selected from the group consisting of PAI, PI, PES, PEI, aromatic polyether ketone resin, and PAS, more preferably at least one selected from the group consisting of PEI, aromatic polyether ketone resin, and PAS, and even more preferably aromatic polyether ketone resin. Also, the heat-resistant resin is preferably at least one selected from the group consisting of PPS, PEI, and PEEK.

[0054] The rubber may be either fluororubber or non-fluororubber (rubber not containing fluorine). Specific examples include diene rubbers such as fluororubber, acrylonitrile-butadiene rubber (NBR) or its hydride (HNBR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), butadiene rubber (BR), natural rubber (NR), isoprene rubber (IR), and cyclopentene rubber (CPR), ethylene-propylene-termonomer copolymer rubber, silicone rubber, butyl rubber, epichlorohydrin rubber, acrylic rubber, chlorinated polyethylene (CPE), chlorosulfonated ethylene rubber (CSM), polyblends of acrylonitrile-butadiene rubber and vinyl chloride (PVC-NBR), ethylene propylene diene rubber (EPDM), and ethylene propylene rubber (EPM). Among these, non-fluororubber is preferred from the viewpoint of improving adhesion to barrier materials having aromatic rings.

[0055] The metal is not particularly limited, and known metals can be used, including iron, steel, non-ferrous metals, etc. Examples of steel include SPC material, SS material, SC material, SK material, stainless steel, chromium-molybdenum high-tensile steel, white cast iron, gray cast iron, and spheroidal graphite cast iron. Examples of non-ferrous metals include aluminum-aluminum alloy, copper-copper alloy, zinc-zinc alloy, titanium-titanium alloy, magnesium-magnesium alloy, and nickel-nickel alloy.

[0056] The ceramic is not particularly limited, and known ceramics can be used, such as alumina, zirconia, aluminum nitride, silicon carbide, silicon oxide, silicon nitride, forsterite, steatite, cordierite, sialon, machinable ceramics, barium titanate, lead zirconate, ferrite, and mullite.

[0057] Alumina has the characteristics of excellent electrical insulation, heat resistance, abrasion resistance, mechanical strength, and relatively high thermal conductivity, making it highly versatile.

[0058] Zirconia has excellent thermal properties, a melting point of 2700°C, a maximum operating temperature of approximately 1200°C, a high thermal shock resistance of Δ400°C, and a significantly lower thermal conductivity than other ceramics.

[0059] Aluminum nitride is characterized by its extremely high thermal conductivity, excellent heat dissipation, insulation, and thermal shock resistance, and is used as a substrate material. Aluminum nitride substrates can be metallized.

[0060] Silicon carbide is characterized by its chemical and physical stability, high hardness, extremely high thermal conductivity compared to other ceramics, and semi-conductivity.

[0061] Silicon oxide is characterized by its excellent heat resistance and thermal shock resistance, with a Vickers hardness of 8.6 to 9.8 GPa.

[0062] Silicon nitride is characterized by its low coefficient of thermal expansion, chemical stability, and excellent wear resistance and electrical insulation, making it used in a wide range of industrial fields.

[0063] Forsterite is characterized by its high insulation resistance and is widely used as an electrical insulating material. Its dielectric constant is 6.5 and its dielectric loss tangent (Tan δ) is small, making it useful as a high-frequency insulating material.

[0064] The characteristics of steatite are low high frequency loss, high insulation resistance at high temperatures, and high mechanical strength.

[0065] A characteristic of cordierite is that when heated, the crystals expand in the radial direction and contract in the height direction.

[0066] The characteristics of sialon include excellent heat resistance, mechanical strength in high-temperature environments, thermal shock resistance, and wear resistance, as well as low thermal expansion, high rigidity, and corrosion resistance.

[0067] Machinable ceramics are characterized by their ease of cutting, suitability for fine and precision machining, and low porosity, which reduces outgassing and helium permeation, providing stable performance even in a vacuum.

[0068] Barium titanate is characterized by its extremely high dielectric constant, which makes it widely used as a dielectric material in multilayer ceramic capacitors and the like, and its extremely high refractive index, which makes it also used as an optical material.

[0069] Lead zirconate is characterized by a large piezoelectric charge coefficient, a medium dielectric constant, and a high coupling coefficient.

[0070] The characteristics of ferrite are that it is a magnetic material that can become a strong magnet, is less conductive to electricity than metallic magnetic materials, and because it is a baked oxide (porcelain), it is resistant to rust and chemicals.

[0071] Mullite oxide is characterized by its excellent heat resistance, impact resistance, and abrasion resistance, and can be produced at relatively low cost.

[0072] Among the above ceramics, zirconia, aluminum nitride, silicon oxide, forsterite, steatite, cordierite, and sialon are preferred, with zirconia, aluminum nitride, and silicon oxide being particularly preferred, from the viewpoint of increasing the effect of laminating with a barrier material.

[0073] The material (a) preferably has a temperature at which it loses 1% by mass due to thermal decomposition (hereinafter also referred to as 1% thermal decomposition temperature) of 560° C. or lower. From the viewpoint of improving chemical resistance, the upper limit of the 1% thermal decomposition temperature is more preferably 500°C, and even more preferably 450°C. The lower limit is not particularly limited, but is preferably 150°C, more preferably 200°C, and even more preferably 250°C. The 1% thermal decomposition temperature is measured using a thermal analyzer, STA7200, manufactured by Hitachi High-Tech Science Corporation. Measurements are performed under a nitrogen purge atmosphere at 200 mL / min. 10 mg of sample is placed in an aluminum pan, held at 25°C for 10 minutes, and then heated to 600°C at a rate of 10°C / min. The temperature at which the mass decreases by 1% from the initial mass is defined as the 1% thermal decomposition temperature.

[0074] To enhance adhesion, the material (a) may be degreased in advance, preferably by wiping with ethanol or isopropyl alcohol or ultrasonic cleaning, though not particularly limited thereto. Pretreatments include roughening the surface by sandblasting or the like, or by chemical conversion treatment such as anodizing, or by plasma or corona treatment, with plasma or corona treatment being particularly preferred.

[0075] The material (a) may be surface-treated with any known method to enhance adhesion, although this is not particularly limited. Specifically, the material may be treated with a silane coupling agent, such as an epoxysilane, aminosilane, isocyanatesilane, vinylsilane, acrylicsilane, hydrophobic alkylsilane, phenylsilane, or fluorinated alkylsilane, which has a reactive functional group.

[0076] Examples of the silane coupling agent include epoxy silanes such as γ-glycidoxypropyltriethoxysilane and β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, amino silanes such as aminopropyltriethoxysilane and N-phenylaminopropyltrimethoxysilane, isocyanate silanes such as 3-isocyanatepropyltrimethoxysilane, vinyl silanes such as vinyltrimethoxysilane, and acrylic silanes such as acryloxytrimethoxysilane, with 3-methacryloxypropyltriethoxysilane being preferred.

[0077] The member of the present disclosure preferably has a tape peel strength of 3 or more, which indicates the adhesiveness between the material (a) and the aromatic ring-containing barrier material.

[0078] The tape peel strength in the present disclosure is evaluated by the following method. Using Nichiban Cellotape (registered trademark) (tape width: 18 mm) used in the JIS-K5600 adhesion test (cross-cut method), a 15 mm long piece of cellotape was attached to the barrier material without any air bubbles. The attached tape was peeled off at a 90° angle, revealing the barrier layer (area 270 mm) of the barrier material to which the cellotape had been attached. 2 The area of ​​the barrier layer peeled off from the test piece is calculated using image analysis (Python) and evaluated as follows. 1: 95% or more of the barrier layer has peeled off 2: More than 60% but less than 95% of the barrier layer has peeled off 3: 40% or more but less than 60% of the barrier layer has peeled off 4: 5% or more but less than 40% of the barrier layer peeled off 5: Less than 5% of the barrier layer has peeled off

[0079] In this specification, the above-mentioned aromatic ring-containing barrier material refers to a material having barrier properties and containing an aromatic ring in the material. The aromatic content (the proportion of carbon atoms in the molecule that constitute the aromatic ring) of the above-mentioned aromatic ring-containing barrier material is not particularly limited, but is preferably 20% or more, more preferably 35% or more, particularly preferably 55% or more, more particularly preferably 70% or more, and is preferably 80% or less. The aromatic content can be determined from the molecular structure by calculating the proportion of carbon atoms in the molecule that constitute aromatic rings. The above-mentioned aromatic ring-containing barrier material can be any material that can form a film containing an aromatic ring-containing barrier material on the surface of the material without any particular limitations.

[0080] Examples of the aromatic ring-containing barrier material include compounds represented by the following formulas (a) to (c): The aromatic ring-containing barrier material is preferably at least one selected from the group consisting of compounds represented by the following formula (a), compounds represented by the following formula (b), and compounds represented by the following formula (c), and more preferably the compound represented by the following formula (a).

[0081] [ka] [ka] [ka] (In the formula, X 1 ~X 4 Y each independently represents hydrogen, halogen, a monovalent hydrocarbon group, or an optionally fluorinated alkoxy group. 1 ~Y 4 each independently represents hydrogen or halogen, and n represents an integer of 1 or greater.

[0082] Above X 1 ~X 4 , the above Y 1 ~Y 4 Examples of the halogen include fluorine (F), chlorine (Cl), bromine (Br), and iodine (I). Of these, fluorine and chlorine are preferred.

[0083] Above X 1 ~X 4 The monovalent hydrocarbon group may have a heteroatom such as a nitrogen atom or an oxygen atom. The monovalent hydrocarbon group may be linear, branched, or cyclic. The number of carbon atoms in the monovalent hydrocarbon group is preferably 1 to 8, more preferably 1 to 5, and even more preferably 1 to 3. Examples of the monovalent hydrocarbon group include alkyl groups, alkenyl groups, and alkynyl groups having the above carbon numbers.

[0084] Above X 1 ~X 4The optionally fluorinated alkoxy group may have a heteroatom such as a nitrogen atom or an oxygen atom. The optionally fluorinated alkoxy group may be linear, branched, or cyclic. The optionally fluorinated alkoxy group preferably has 1 to 8 carbon atoms, more preferably 1 to 5 carbon atoms, and even more preferably 1 to 3 carbon atoms. Examples of the optionally fluorinated alkoxy group include an -OCF3 group and an -OCF2CF3 group.

[0085] Above X 1 ~X 4 Among the hydrogen, halogen and monovalent hydrocarbon groups, hydrogen and halogen are preferred, and hydrogen, fluorine and chlorine are more preferred. Above Y 1 ~Y 4 Among hydrogen and halogen, hydrogen, fluorine and chlorine are preferred.

[0086] Examples of the above-mentioned aromatic ring-containing barrier material include compounds represented by the following formula:

[0087] [ka]

[0088] [ka]

[0089] [ka]

[0090] [ka]

[0091] [ka]

[0092] [ka]

[0093] [ka]

[0094] As the above-mentioned aromatic ring-containing barrier material, a paraxylylene polymer called parylene is preferred from the viewpoint of chemical resistance.

[0095] The paraxylylene-based polymer (parylene) includes parylene with no substituents on the benzene ring, as shown in formula (1) below (hereinafter also referred to as parylene N), as well as parylene with various functional groups introduced into the benzene ring and parylene with hydrogen atoms substituted on the methylene group adjacent to the benzene ring. Specific examples include a polymer with chlorine introduced into the benzene ring, as shown in formula (2) below (hereinafter also referred to as parylene C), a polymer with methyl groups introduced into the methylene group, as shown in formula (3) below (hereinafter also referred to as parylene M), a polymer with fluorine introduced into the methylene group, as shown in formula (4) below (hereinafter also referred to as parylene F), a polymer with two chlorine atoms introduced into the benzene ring, as shown in formula (5) below (hereinafter also referred to as parylene D), a polymer with fluorine introduced into the methylene group, as shown in formula (6) below (hereinafter also referred to as parylene HT), and a polymer with fluorine introduced into the benzene ring, as shown in formula (7) below (hereinafter also referred to as parylene BF), where n is an integer of 1 or greater. Among these, at least one selected from the group consisting of polyparaxylene and polyparaxylene having a halogen introduced on the benzene ring is preferred, at least one selected from the group consisting of parylene N, parylene C, parylene D, and parylene BF is more preferred, at least one selected from the group consisting of parylene N, parylene C, and parylene D is even more preferred, at least one selected from the group consisting of parylene C and parylene D is even more preferred, and parylene C is particularly preferred.

[0096] [ka]

[0097] [ka]

[0098] [ka]

[0099] [ka]

[0100] [ka]

[0101] [ka]

[0102] [ka]

[0103] The coating containing the above-mentioned aromatic ring-containing barrier material can be formed by a known deposition film forming method or the like. Such methods include vacuum deposition, sputtering, ion plating, ion vapor deposition (IVD), plasma vapor deposition (CVD), etc. Among these, CVD, sputtering, ion vapor deposition, and vacuum deposition are preferred.

[0104] In the member of the present disclosure, from the viewpoint of chemical resistance, the coating containing the above-mentioned barrier material having an aromatic ring preferably has a thickness of 0.01 to 100 μm. The lower limit of the film thickness is more preferably 0.1 μm, and even more preferably 1 μm. The upper limit of the film thickness is more preferably 75 μm, and even more preferably 50 μm.

[0105] The coating containing the above-mentioned barrier material having an aromatic ring preferably has a content of the barrier material having an aromatic ring in the coating (100% by mass) of 90 to 100% by mass. The lower limit of the content is more preferably 93% by mass, and even more preferably 95% by mass. The upper limit of the content is not particularly limited, and may be 100% by mass.

[0106] The coating containing the above-mentioned aromatic ring-containing barrier material may be annealed. Annealing increases the crystallinity of the coating, improving its chemical resistance, cut-through resistance, hardness, and abrasion resistance. The crystallinity of the coating is measured using an X-ray diffractometer (XRD) at a tube voltage of 40 kV and a tube current of 40 mA, and a peak intensity at 14 to 17° originating from the barrier material can be confirmed.

[0107] The annealing method is not particularly limited, but the test piece can be heated in an air-blowing constant temperature incubator, and can be performed in an air atmosphere, an inert gas atmosphere, or a vacuum. The degree of crystallinity can also be controlled by controlling the temperature and time. The annealing atmosphere is not particularly limited, but an inert gas atmosphere or vacuum is preferable to an air atmosphere in terms of suppressing degradation of the barrier film, and a nitrogen atmosphere or argon atmosphere is particularly preferable. The heating time is not particularly limited, but from the viewpoint of increasing the degree of crystallinity, it is preferably 10 seconds to 3 hours, more preferably 30 seconds to 2 hours and 30 minutes, and particularly preferably 1 hour to 2 hours. The heating temperature is not particularly limited, but is preferably 50°C to 300°C, more preferably 80°C to 250°C, and particularly preferably 100°C to 210°C, from the viewpoint of increasing the degree of crystallinity.

[0108] The member of the present disclosure is used as at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials. As the member, a semiconductor material is preferred because of its excellent chemical resistance, and a semiconductor manufacturing-related equipment member (semiconductor manufacturing equipment article) is more preferred.

[0109] Examples of the building materials (construction materials) include interior building materials such as baseboards, ceiling materials, and plumbing materials, and exterior building materials such as waterproof sheets, waterproofing materials, exterior wall materials, and roofing materials. Examples of the mobility components include parts used in ferries, trains, automobiles, motorcycles, drones, robots, etc. Examples of the aerospace members include exterior and interior materials for aircraft, rockets, etc., wire covering materials, cable protection materials, jet engines, cabin interior materials, and parts thereof. Examples of the semiconductor materials include process materials used in semiconductor manufacturing and parts for semiconductor manufacturing-related devices. Examples of the information communication members include parts of devices such as wireless LAN transmission / reception circuits, circuit boards, and parts of devices such as optical communication devices.

[0110] Because chemical resistance is required, the member of the present disclosure can be suitably applied to at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials, and can be particularly suitably used in the piping, nozzles, tubes, and the like in semiconductor manufacturing related equipment.

[0111] The piping is not particularly limited, but examples of its shape include a robust pipe type, a flexible hose that can be incorporated to fit the installation space, a bellows pipe with a large diameter that can be bent, etc. The inside of the piping may be polished with high precision so as not to generate dust and not to disturb the liquid flow or gas flow.

[0112] The nozzle is not particularly limited, but the tip may be precisely machined to match the size and shape of the part, and in addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0113] The tube is not particularly limited, but the diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 mm to 25 mm. A material having stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (less contamination of the chemical solution by extracted ions) is used.

[0114] The tank or container is not particularly limited, but may be precision cleaned (water washing, acetic acid immersion, wiping cleaning, pure water cleaning, etc.) to remove dirt and residues. Packaging after cleaning may be carried out in a clean room or clean booth environment.

[0115] The joints and valves are not particularly limited, but are required to be oil-free, particle-free, dead space-free, and external leak-free, and the size is preferably in the range of Φ3.2 to 40.0 mm, and more preferably in the range of Φ3.2 to 12.7 mm.

[0116] The pump is not particularly limited, but may be required to have retractability.

[0117] The spin chuck is not particularly limited, but may be required to have hardness, corrosion resistance, and dimensional stability, and may be provided with electrical conductivity.

[0118] Although there are no particular limitations on O-rings and sealing materials, the material properties required may include excellent elasticity, good compression set, excellent wear resistance, excellent heat resistance, resistance to corrosion by applied liquids and gases, and a long lifespan. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore may require high heat resistance, chemical resistance, and plasma resistance.

[0119] The packing and gasket are not particularly limited, but may be required to have a low coefficient of friction and excellent abrasion resistance, and may also be required to have heat resistance, cold resistance, pressure resistance, and chemical resistance to prevent leakage.

[0120] The washer is not particularly limited, but is expected to be used in a clean room or the like and may be required to have durability, corrosion resistance, and rust prevention properties.

[0121] The semiconductor manufacturing equipment of the above-mentioned semiconductor manufacturing related equipment includes photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, descum equipment), thin film formation, etching, cleaning and drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high current ion implantation equipment, medium current ion implantation equipment, high energy ion implantation equipment), thin film formation equipment, CVD equipment (high pressure CVD equipment, SACVD, low pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor Conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectroscopy equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machines, bump plating equipment, back grinder tape applicators, back grinders, back grinder tape peelers), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonder These include equipment such as bonding equipment, outer lead bonding equipment, flip chip bonding equipment, packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (probers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (cold heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life test equipment). Equipment related to semiconductor manufacturing equipment includes various transport devices (intra-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical equipment (pure water production equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various taping equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0122] Among these, semiconductor manufacturing equipment that utilizes the properties of paraxylylene-based polymers (parylene) includes thin film formation, etching, cleaning and drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), thin film formation equipment, CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), and inspection and evaluation equipment. (Auger electron spectroscopy equipment), other processing equipment (wafer marking equipment, back grinding machine, bump plating equipment, tape application machine for back grinder, back grinder, tape peeling machine for back grinder), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment, outer lead bonding equipment, flip chip bonding equipment), packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (propper), handler, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), other inspection equipment (cold heat test equipment, temperature and humidity test equipment, pressure cooker equipment, laser processing system, various life test equipment). Preferred examples of equipment related to semiconductor manufacturing equipment include various transport devices (storage devices), pure water and chemical liquid equipment (pure water manufacturing equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various taping equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0123] From the viewpoint of laminating paraxylylene-based polymers (parylene) and taking advantage of their chemical resistance properties, particularly preferred semiconductor manufacturing equipment includes thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment, resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning / drying equipment (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, metal CVD equipment, ALD equipment), plating equipment, bump plating equipment, and other inspection equipment (various life test equipment). Particularly preferred examples of equipment related to semiconductor manufacturing equipment include pure water and chemical liquid equipment (slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (environmental testing equipment), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various packaging equipment, and measuring equipment for liquids and various gases).

[0124] From the perspective of laminating paraxylylene-based polymers (parylene) and taking advantage of their flexible physical properties, more preferred semiconductor manufacturing equipment includes thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect repair equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning / drying equipment (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, metal CVD equipment, ALD equipment), plating equipment, bump plating equipment, and other inspection equipment (cold-heat test equipment, temperature / humidity test equipment, pressure cooker equipment, laser processing systems, various life test equipment). As equipment related to semiconductor manufacturing equipment, pure water / chemical liquid equipment (slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (environmental testing equipment, other manufacturing-related equipment (various jig cleaning / drying equipment, flow control equipment, various packaging equipment, measuring equipment for liquids and various gases) are more preferable.

[0125] As described above, the components of the present disclosure can be suitably used as components for semiconductor manufacturing-related equipment (articles for semiconductor manufacturing-related equipment), but due to their excellent chemical resistance, they are more suitable as components constituting semiconductor manufacturing-related equipment in which chemicals are used within the equipment.

[0126] The chemicals are not particularly limited, but include chemicals used in semiconductor manufacturing related equipment, etc. The chemicals can be used alone or in combination of two or more.

[0127] Specific examples of the chemical include TMAH([(CH3)4N] + [OH] -), sulfuric acid, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, H2O2, and H2O), SC2 (a mixture of HCl, H2O2, and H2O), phosphoric acid, and hydrochloric acid. Among them, TMAH([(CH3)4N] + [OH] - ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, H2O2, and H2O), SC2 (a mixture of HCl, H2O2, and H2O), phosphoric acid, and hydrochloric acid. A mixed acid of hydrofluoric acid and nitric acid, hydrofluoric acid, or SPM is preferred, and a mixed acid of hydrofluoric acid and nitric acid, or SPM is more preferred.

[0128] Other examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas. Also preferred examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0129] Examples of the silicon-based gas include monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the arsenic-based gas include arsine, arsenic fluoride (III), arsenic fluoride (V), arsenic chloride (III), and arsenic chloride (V). Examples of the phosphorus-based gas include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gas include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the metal hydride gas include hydrogen selenide, monogermane, hydrogen telluride, stibine, and tin hydride. Examples of the metal alkyl gas include trialkylgallium and trialkylindium. Examples of the halogenated hydrocarbon gas include tetrafluoromethane, trifluoromethane, difluoromethane, hexafluoropropane, octafluoropropane, and octafluorocyclobutane. Examples of the halogen / halide gas include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gas include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and octafluorocyclobutane are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0130] In order to ensure chemical resistance, it is preferable that at least a portion of the surface of the semiconductor manufacturing-related equipment component (semiconductor manufacturing-related equipment article) that comes into contact with the chemicals is laminated with the barrier material having the aromatic ring, and it is more preferable that the entire surface that comes into contact with the chemicals is laminated with the barrier material having the aromatic ring.

[0131] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 70.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned component (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) or a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration), and kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0132] The upper limit of the mass change rate is more preferably 20% by mass, even more preferably 10% by mass, and even more preferably 5% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0133] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 70.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned component (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in SPM (a mixture of concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 2:1) and left at room temperature (20°C) for one day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0134] The upper limit of the mass change rate is more preferably 20% by mass, even more preferably 10% by mass, and even more preferably 5% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0135] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 70.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned component (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece is completely immersed in concentrated sulfuric acid (98%) and kept at 90°C for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0136] The upper limit of the mass change rate is more preferably 20% by mass, even more preferably 10% by mass, and even more preferably 5% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0137] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 70.0 mass % or less in the following chemical resistance evaluation. (Chemical resistance evaluation) A test piece of the above-mentioned component (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, measure the mass of the test piece before immersion at room temperature (20°C). After the measurement, the test piece was treated with TMAH([(CH3)4N] + [OH] - ) (25% concentration), completely immersed in 80°C and kept for one week (168 hours). After the measurement, the test piece was completely immersed in concentrated sulfuric acid (98%) and kept at 90°C for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured mass before and after immersion.

[0138] The upper limit of the mass change rate is more preferably 10% by mass, even more preferably 5% by mass, and even more preferably 1% by mass. There is no particular lower limit, and 0% by mass is most preferred.

[0139] The member of the present disclosure can be produced by a production method including a step of forming a coating containing the above-mentioned barrier material having an aromatic ring on the surface of the above-mentioned material (a) using, for example, the above-mentioned CVD, sputtering, ion vapor deposition, vacuum vapor deposition, or the like, to produce a member in which at least a portion of the surface of the material (a) is laminated with the above-mentioned barrier material having an aromatic ring. In the above-mentioned production method, a parylene film or the like can be formed using the above-mentioned CVD, sputtering, ion vapor deposition, vacuum vapor deposition, or the like. The present disclosure also relates to a production method for producing the above-mentioned member under conditions at or below the temperature at which the above-mentioned material (a) loses 1% by mass due to thermal decomposition. The production method of the present disclosure preferably includes a step of coating the surface of the above-mentioned material (a) with the above-mentioned barrier material having an aromatic ring using CVD, sputtering, ion vapor deposition, or vacuum vapor deposition.

[0140] The semiconductor manufacturing related device of the present disclosure is preferably a semiconductor manufacturing related device equipped with the above-described member. By using the member of the present disclosure, excellent chemical resistance can be imparted to the device.

[0141] The semiconductor manufacturing-related device of the present disclosure is preferably one of the semiconductor manufacturing devices and related devices described above. Also, the semiconductor manufacturing-related device of the present disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing devices and related devices for semiconductor manufacturing devices.

[0142] The semiconductor manufacturing equipment is at least one selected from the group consisting of thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, wafer processing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, heat treatment equipment, CVD equipment, sputtering equipment, thin film formation equipment, inspection / evaluation equipment, processing equipment, dicing equipment, bonding equipment, packaging equipment, testing equipment, probing equipment, handler, aging equipment, and inspection equipment; The semiconductor manufacturing related equipment is preferably at least one selected from the group consisting of a transfer device, a pure water / chemical device, a gas device, a clean room device, and manufacturing-related equipment.

[0143] the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a sputtering apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; The inspection and evaluation equipment and manufacturing equipment are defect repair equipment, the wafer processing device is a wafer marking device, the resist treatment device is at least one selected from the group consisting of a coating device, a developing device, a resist stripping device, an ashing device, and a baking device; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus, the cleaning / drying device is at least one selected from the group consisting of a dry cleaning device, a wet cleaning device, a scrub cleaning device, and a drying device; the heat treatment device is at least one selected from the group consisting of an oxidation device, a diffusion device, and an annealing device; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, an SACVD apparatus, a low-pressure CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the inspection and evaluation device is an Auger electron spectroscopy device, the processing device is at least one selected from the group consisting of a wafer marking device, a back grinding machine, a bump plating device, a tape application machine for a back grinder, a back grinder, and a tape peeling machine for a back grinder; The dicing device is at least one selected from the group consisting of a dicing device and a wafer mounting device, the bonding apparatus is at least one selected from the group consisting of a die bonding apparatus, a hybrid bonding apparatus, a wire bonding apparatus, an inner lead bonding apparatus, an outer lead bonding apparatus, and a flip chip bonding apparatus; the packaging device is at least one selected from the group consisting of a molding device, a deburring device, and a soldering processing device; the testing device is at least one selected from the group consisting of an electron beam testing device and a laser beam testing device, The ploping device is a plopper, the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC extraction device; the inspection device is at least one selected from the group consisting of a thermal testing device, a temperature and humidity testing device, a pressure cooker device, a laser processing system, and a life testing device; the conveying device is a stocker, the pure water / chemical liquid device is at least one selected from the group consisting of a pure water production device, an ultrafiltration device, a reverse osmosis device, a sterilization device, a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device; The gas device is at least one selected from the group consisting of a gas generator, a gas purifier, a gas mixer, a gas detector, and an exhaust gas treatment device; The clean room equipment is at least one selected from the group consisting of a clean bench, a clean tunnel, an environmental testing device, an air shower, and a pass box; The manufacturing-related equipment is preferably at least one selected from the group consisting of a jig cleaning / drying device, a flow rate control device, a taping device, a packaging device, and a measuring device for liquids and gases.

[0144] Although the embodiments have been described above, it will be understood that various changes in form and details can be made without departing from the spirit and scope of the claims. [Example]

[0145] The present disclosure will now be described in more detail with reference to examples, but the present disclosure is not limited to these examples.

[0146] Various physical properties were measured by the following methods.

[0147] <Aromatic content> It was determined by calculating the proportion of carbon atoms in the molecule that make up aromatic rings from the molecular structure.

[0148] <Tape peel strength measurement> Using Nichiban Cellotape (registered trademark) (tape width: 18 mm) used in the JIS-K5600 adhesion test (cross-cut method), a 15 mm long piece of cellotape was attached to the barrier material without any air bubbles. The attached tape was peeled off at a 90° angle, and the barrier layer (area 270 mm2) of the barrier material to which the cellotape had been attached was removed. 2 The area of ​​the barrier layer peeled off from the test piece was calculated using image analysis (Python) and evaluated as follows. 1: 95% or more of the barrier layer has peeled off 2: More than 60% but less than 95% of the barrier layer has peeled off 3: 40% or more but less than 60% of the barrier layer has peeled off 4: 5% or more but less than 40% of the barrier layer peeled off 5: Less than 5% of the barrier layer has peeled off

[0149] <Chemical resistance evaluation 1-1> Chemical Resistance Evaluation 1-1: Chemical resistance to acidic chemicals was evaluated under the test conditions shown in Table 1 by the following method. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60%) or a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60%), and kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0150] <Chemical resistance evaluation 1-2> In the chemical resistance evaluation 1-2, chemical resistance to acidic chemicals was evaluated under the test conditions shown in Table 1 by the following method. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was completely immersed in SPM (concentrated sulfuric acid and hydrogen peroxide solution in a volume ratio of 2:1) and kept at room temperature (20°C) for one day (24 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0151] <Chemical resistance evaluation 1-3> Chemical resistance evaluation 1-3 was carried out by evaluating the chemical resistance to acidic chemicals under the test conditions shown in Table 1 by the following method. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was completely immersed in concentrated sulfuric acid (98%) and kept at 90°C for one week (168 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0152] <Chemical resistance evaluation 2> In the chemical resistance evaluation 2, chemical resistance to basic chemicals was evaluated under the test conditions shown in Table 1 by the following method. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was treated with TMAH([(CH3)4N] + [OH] - ) (25% concentration), and completely immersed in 80°C and kept for one week (168 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0153] The materials (a) (substrates) and barrier materials used in the examples and comparative examples are shown below. (Material (a)) PPS: Polyphenylene sulfide, MFR 125g / 10min, shape: 10mm x 50mm x 6mm, 1% thermal decomposition temperature 473℃. PEI: Polyetherimide, MFR 45g / 10min, shape: 10mm x 50mm x 2mm, 1% thermal decomposition temperature 455℃. PEEK: Polyetheretherketone, MFR 20g / 10min, shape: 10mm x 50mm x 2mm, 1% thermal decomposition temperature 554℃. (barrier materials) Barrier material 1: Parylene C (aromatic content: 75%) manufactured by Japan Parylene LLC Barrier material 2: Parylene N (aromatic content: 75%) manufactured by Japan Parylene LLC Barrier material 3: Parylene D (aromatic content: 75%) manufactured by Japan Parylene LLC

[0154] Examples 1, 2, 4, 5, 7, 8, 10, 11, 13, and 14 Barrier material 1 (Parylene C) was coated onto PPS by vacuum deposition according to the conditions in Table 1 to obtain a test piece (laminate member).

[0155] Examples 3, 6, 9, 12, and 15 Barrier material 2 (Parylene N) was coated onto PPS by vacuum deposition according to the conditions in Table 1 to obtain a test piece (laminate member).

[0156] Examples 22 to 25 According to the conditions in Table 1, PEI was coated with barrier materials 1 to 3 by vacuum deposition to obtain test pieces (laminated members).

[0157] Example 29 Barrier material 3 (Parylene D) was coated onto PEEK by vacuum deposition according to the conditions in Table 1 to obtain a test piece (laminate member).

[0158] Examples 16 to 21, 26 to 28, 30 to 32 Laminated members were obtained by coating each substrate type (PPS, PEEK, PEI) with barrier materials 1 to 3 using vacuum deposition according to the conditions in Table 1. The laminated members were then annealed in an air atmosphere in a constant temperature incubator (DKN602, manufactured by Yamato Scientific Co., Ltd.) at the specified temperatures and times shown in Table 1, then removed and cooled at room temperature to obtain test pieces (annealed laminated members).

[0159] To evaluate the crystallinity of each barrier material type, measurements were taken using an X-ray diffraction (XRD) device (model: SmartLab, manufactured by Rigaku Corporation) under conditions of a tube voltage of 40 kV and a tube current of 40 mA, and the peak intensity at 14 to 17° originating from the barrier material type was confirmed. <Peak intensity (cps)> Barrier material 1 (Parylene C): 38,000 Barrier material 1-A (Parylene C 210℃, 2h annealing): 375,000 Barrier material 1-B (Parylene C 150°C, 1h anneal): 178,000 Barrier material 1-C (Parylene C 100℃, 1h annealing): 122,000 Barrier material 2 (Parylene N): 111,000 Barrier material 2-A (Parylene N 210℃, 2h annealing): 243,000 Barrier material 2-B (Parylene N 150℃, 1h annealing): 200,000 Barrier material 2-C (Parylene N 100℃, 1h anneal): 165,000 Barrier material 3 (Parylene D): 7,000 Barrier material 3-A (Parylene D annealed at 210°C for 2 hours): 44,000 Barrier material 3-B (Parylene D 150°C, 1 hour annealing): 20,000 Barrier material 3-C (Parylene D 100°C, 1 hour annealing): 15,000

[0160] Comparative Examples 1 to 5 The test specimen was PPS.

[0161] Comparative Examples 6 and 7 PEI was used as the test specimen.

[0162] Comparative Example 8 The test specimen was made of PEEK.

[0163] [Table 1]

[0164] The laminated members of the examples were suitable for use as members (components) in semiconductor manufacturing related equipment where chemicals are used.

Claims

1. A member in which at least a part of the surface of a material (a) is laminated with a barrier material having an aromatic ring, The component is at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials.

2. 2. The member according to claim 1, wherein the aromatic content (the proportion of carbon atoms in a molecule that constitute an aromatic ring) of the aromatic ring-containing barrier material is 20% or more.

3. 3. The member according to claim 1 or 2, wherein the barrier material having an aromatic ring is at least one selected from the group consisting of a compound represented by the following formula (a), a compound represented by the following formula (b), and a compound represented by the following formula (c): 【Chemical 1】 【Chemistry 2】 【Chemistry 3】 (In the formula, X １ ~X ４ each independently represents hydrogen, halogen, a monovalent hydrocarbon group, or an optionally fluorinated alkoxy group. １ ~Y ４ each independently represents hydrogen or halogen, and n represents an integer of 1 or more.

4. 3. The member according to claim 1, wherein the aromatic ring-containing barrier material is at least one selected from the group consisting of polyparaxylene and polyparaxylene having a halogen introduced into the benzene ring.

5. 3. The member according to claim 1 or 2, wherein the aromatic ring-containing barrier material is at least one selected from the group consisting of a polymer represented by the following formula (1), a polymer represented by the following formula (2), and a polymer represented by the following formula (5): 【Chemistry 4】 【Chemistry 5】 【Chemistry 6】

6. 3. The member according to claim 1, wherein the aromatic ring-containing barrier material is at least one selected from the group consisting of a polymer represented by the following formula (2) and a polymer represented by the following formula (5): 【Chemistry 7】 【Chemistry 8】

7. 3. The member according to claim 1, wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal, and ceramic.

8. 3. The member according to claim 1, wherein the material (a) is at least one selected from the group consisting of resins and rubbers.

9. 3. The member according to claim 1, wherein the material (a) is at least one selected from the group consisting of polyphenylene sulfide, polyetherimide resin, and polyetheretherketone resin.

10. 3. The member according to claim 1, wherein the material (a) undergoes thermal decomposition at a temperature of 560°C or less when it loses 1% by mass.

11. 3. The member according to claim 1, wherein the coating containing the aromatic ring-containing barrier material has a thickness of 0.01 to 100 μm.

12. 3. The member according to claim 1, wherein the coating containing the aromatic ring-containing barrier material has a thickness of 1 to 50 μm.

13. The member according to claim 1 or 2, which is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

14. 3. The member according to claim 1, wherein the member is a member for semiconductor manufacturing related equipment.

15. 15. The member according to claim 14, wherein the semiconductor manufacturing related equipment is an equipment in which chemicals are used.

16. The chemical is TMAH([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ 16. The component of claim 15, wherein the acid is at least one selected from the group consisting of a mixture of ammonium hydroxide, ...

17. 16. The member according to claim 15, wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

18. 15. The semiconductor manufacturing related equipment member according to claim 14, wherein at least a part of the surface that comes into contact with the chemical is laminated with the barrier material having the aromatic ring.

19. 15. The component according to claim 14, wherein the component is a component for semiconductor manufacturing related equipment in which chemicals are used, and at least a part of the surface that comes into contact with the chemicals is laminated with the barrier material.

20. 3. The member according to claim 1, wherein the mass change rate in the following chemical resistance evaluation is 70.0 mass % or less. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60° C. for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is completely immersed in a mixed acid having a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:5 (hydrofluoric acid concentration: 50%, nitric acid concentration: 60%) or a mixed acid having a concentration ratio (molar ratio) of hydrofluoric acid to nitric acid of 1:100 (hydrofluoric acid concentration: 50%, nitric acid concentration: 60%), and is kept at room temperature (20°C) for one day (24 hours) or one week (168 hours). After the holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

21. 3. The member according to claim 1, wherein the mass change rate in the following chemical resistance evaluation is 70.0 mass % or less. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60° C. for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is completely immersed in SPM (a mixture of concentrated sulfuric acid and hydrogen peroxide solution in a volume ratio of 2:1) and left at room temperature (20° C.) for one day (24 hours). After the holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

22. 3. The member according to claim 1, wherein the mass change rate in the following chemical resistance evaluation is 70.0 mass % or less. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60° C. for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is completely immersed in concentrated sulfuric acid (98%) and kept at 90° C. for one week (168 hours). After the holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

23. 3. The member according to claim 1, wherein the mass change rate in the following chemical resistance evaluation is 70.0 mass % or less. (Chemical resistance evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, thickness of coating: 15 μm) is dried at 60° C. for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece was ３ ) ４ N] ＋ [OH] － ) (25% concentration), completely immersed in 80°C and kept for 1 week (168 hours). After the holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

24. 3. The method for manufacturing a member according to claim 1, wherein the member is manufactured under conditions of a temperature at which the material (a) loses 1% by mass due to thermal decomposition or lower.

25. The method for manufacturing a member according to claim 24, further comprising the step of coating the surface of the material (a) with the aromatic ring-containing barrier material by using CVD, sputtering, ion deposition, or vacuum deposition.

26. 3. A semiconductor manufacturing related device equipped with the member according to claim 1 or 2.

27. 27. The semiconductor manufacturing related equipment according to claim 26, which is at least one selected from the group consisting of semiconductor manufacturing equipment and equipment related to semiconductor manufacturing equipment.

28. the semiconductor manufacturing equipment is at least one selected from the group consisting of thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, wafer processing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, heat treatment equipment, CVD equipment, sputtering equipment, thin film formation equipment, inspection / evaluation equipment, processing equipment, dicing equipment, bonding equipment, packaging equipment, testing equipment, probing equipment, handler, aging equipment, and inspection equipment; 28. The semiconductor manufacturing related equipment according to claim 27, wherein the semiconductor manufacturing related equipment is at least one selected from the group consisting of a transport device, a pure water / chemical device, a gas device, a clean room device, and manufacturing related equipment.

29. the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a sputtering apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; the inspection and evaluation device / manufacturing device is a defect repair device, the wafer processing device is a wafer marking device, the resist treatment device is at least one selected from the group consisting of a coating device, a developing device, a resist stripping device, an ashing device, and a baking device; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus, The cleaning / drying device is at least one selected from the group consisting of a dry cleaning device, a wet cleaning device, a scrub cleaning device, and a drying device; the heat treatment device is at least one selected from the group consisting of an oxidation device, a diffusion device, and an annealing device; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, a SACVD apparatus, a low-pressure CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the inspection and evaluation device is an Auger electron spectroscopy device, the processing device is at least one selected from the group consisting of a wafer marking device, a back grinding machine, a bump plating device, a tape application machine for a back grinder, a back grinder, and a tape peeling machine for a back grinder; the dicing machine is at least one selected from the group consisting of a dicing machine and a wafer mounting machine, the bonding apparatus is at least one selected from the group consisting of a die bonding apparatus, a hybrid bonding apparatus, a wire bonding apparatus, an inner lead bonding apparatus, an outer lead bonding apparatus, and a flip chip bonding apparatus; the packaging device is at least one selected from the group consisting of a molding device, a deburring device, and a soldering processing device; the testing device is at least one selected from the group consisting of an electron beam testing device and a laser beam testing device, the prober is a prober; the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC removal device; the inspection device is at least one selected from the group consisting of a thermal testing device, a temperature and humidity testing device, a pressure cooker device, a laser processing system, and a life testing device; the transport device is a stocker, the pure water / chemical liquid device is at least one selected from the group consisting of a pure water production device, an ultrafiltration device, a reverse osmosis device, a sterilization device, a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device; The gas device is at least one selected from the group consisting of a gas generator, a gas purifier, a gas mixer, a gas detector, and an exhaust gas treatment device; the clean room equipment is at least one selected from the group consisting of a clean bench, a clean tunnel, an environmental testing device, an air shower, and a pass box; 29. The semiconductor manufacturing related equipment according to claim 28, wherein the manufacturing related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a taping device, a packaging device, and a liquid / gas measuring device.

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