Non-volatile memory device and manufacturing method thereof

a memory device and non-volatile technology, applied in the field of semiconductor devices, can solve the problems of no conductive vias are disposed under the dummy memory cells, and affecting the performance of the devi

US20220367565A1Active Publication Date: 2022-11-17UNITED MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
Publication Date
2022-11-17

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Abstract

Provided are a non-volatile memory device and a manufacturing method thereof. The non-volatile memory device includes a substrate having a memory region and a dummy region surrounding the memory region, an interconnect structure, memory cells, conductive vias and dummy vias. The interconnect structure is disposed on the substrate and in the memory region. The memory cells are disposed on the interconnect structure and arranged in an array when viewed from a top view. The memory cells include first memory cells in the memory region and second memory cells in the dummy region. The conductive vias are disposed in the memory region and between the first memory cells and the interconnection structure to electrically connect each of the first memory cells to the interconnect structure. The dummy vias are disposed in the dummy region and surround the memory region.
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Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application claims the priority benefit of China application serial no. 202110532868.6, filed on May 17, 2021. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.BACKGROUNDTechnical Field

[0002] The present invention relates to a semiconductor device and a manufacturing method thereof, and particularly relates to a non-volatile memory device and a manufacturing method thereof.Description of Related Art

[0003] In the general magnetoresistive random access memory (MRAM) process, during the patterning process for forming memory cells, the optical effect may affect the profile of the memory cells located at the edge of the memory region, making the dimension of the memory cells located at the edge of the memory region smaller than the dimensions of other memory cells.

[0004] In order to avoid the above problem, currently a dummy region may be disposed around th...

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Embodiment Construction

[0036]The embodiments are described in detail below with reference to the accompanying drawings, but the embodiments are not intended to limit the scope of the present invention. In addition, the drawings are for illustrative purposes only and are not drawn to the original dimensions. For the sake of easy understanding, the same elements in the following description will be denoted by the same reference numerals.

[0037]In the text, the terms mentioned in the text, such as “comprising”, “including”, “containing” and “having” are all open-ended terms, i.e., meaning “including but not limited to”.

[0038]When using terms such as “first” and “second” to describe elements, it is only used to distinguish the elements from each other, and does not limit the order or importance of the devices. Therefore, in some cases, the first element may also be called the second element, the second element may also be called the first element, and this is not beyond the scope of the present invention.

[0039...