Member, method for manufacturing member, and semiconductor-manufacturing-related device

Abstract

The purpose of the present disclosure is to provide a member having exceptional chemical resistance, a method for manufacturing the member, and a semiconductor-manufacturing-related device. The present disclosure pertains to a member in which at least part of the surface of a material (a) is laminated with a barrier material having an aromatic ring, wherein the member is at least one selected from the group consisting of building material members, mobility members, aerospace members, semiconductor members, and information communication members.

Description

Component, component manufacturing method, and semiconductor manufacturing-related equipment

[0001] The present disclosure relates to a component, a method for manufacturing the component, and a semiconductor manufacturing-related device.

[0002] Techniques have been proposed for coating substrates in semiconductor manufacturing equipment to prevent contamination (see, for example, Patent Documents 1 to 3).

[0003] JP 2009-21369 A JP 2009-239151 A JP 2011-23563 A

[0004] An object of the present disclosure is to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment.

[0005] The present disclosure (1) is a member in which at least a portion of the surface of a material (a) is laminated with a barrier material having an aromatic ring, and the member is at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials.

[0006] The present disclosure (2) is the member according to the present disclosure (1), wherein the aromatic content of the barrier material having an aromatic ring (the proportion of carbon atoms in the molecule that constitute the aromatic ring) is 20% or more.

[0007] The present disclosure (3) is the member according to the present disclosure (1) or (2), wherein the barrier material having an aromatic ring is at least one selected from the group consisting of a compound represented by the following formula (a), a compound represented by the following formula (b), and a compound represented by the following formula (c): (In the formula, X １ ~X ４ each independently represents hydrogen, halogen, a monovalent hydrocarbon group, or an optionally fluorinated alkoxy group. １ ~Y ４ each independently represents hydrogen or halogen, and n represents an integer of 1 or more.

[0008] The present disclosure (4) is a member of any combination with any of the present disclosures (1) to (3), in which the barrier material having an aromatic ring is at least one selected from the group consisting of polyparaxylene and polyparaxylene having a halogen introduced into the benzene ring.

[0009] The present disclosure (5) is a member of any combination with any of the present disclosures (1) to (3), wherein the barrier material having an aromatic ring is at least one selected from the group consisting of a polymer represented by the following formula (1), a polymer represented by the following formula (2), and a polymer represented by the following formula (5):

[0010] The present disclosure (6) is a member of any combination with any of the present disclosures (1) to (3), in which the barrier material having an aromatic ring is at least one selected from the group consisting of a polymer represented by the following formula (2) and a polymer represented by the following formula (5):

[0011] The present disclosure (7) is a member of any combination with any of the present disclosures (1) to (6), wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal, and ceramic.

[0012] The present disclosure (8) is a member of any combination with any of the present disclosures (1) to (7), wherein the material (a) is at least one selected from the group consisting of resin and rubber.

[0013] The present disclosure (9) is a member of any combination with any of the present disclosures (1) to (8), in which the material (a) is at least one selected from the group consisting of polyphenylene sulfide, polyetherimide resin, and polyether ether ketone resin.

[0014] The present disclosure (10) is a member of any combination with any of the present disclosures (1) to (9), in which the material (a) has a temperature of 560°C or less when it loses 1% by mass due to thermal decomposition.

[0015] The present disclosure (11) is a member of any combination with any of the present disclosures (1) to (10), wherein the coating containing the barrier material having an aromatic ring has a thickness of 0.01 to 100 μm.

[0016] The present disclosure (12) is a member of any combination with any of the present disclosures (1) to (11), wherein the coating containing the barrier material having an aromatic ring has a thickness of 1 to 50 μm.

[0017] The present disclosure (13) is a member in any combination with any of the present disclosures (1) to (12), wherein the member is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

[0018] The present disclosure (14) is a member of any combination with any of the present disclosures (1) to (13) in which the member is a member for semiconductor manufacturing related equipment.

[0019] The present disclosure (15) is the member according to the present disclosure (14), wherein the semiconductor manufacturing related device is a device in which a chemical is used.

[0020] The present disclosure (16) relates to a method for treating a disease in which the drug is TMAH([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ The component according to the present disclosure (15) is at least one selected from the group consisting of a mixture of ammonium hydroxide, ...

[0021] The present disclosure (17) is the member according to the present disclosure (15), wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0022] The semiconductor manufacturing-related equipment member of the present disclosure (18) is a member of any combination with any of the present disclosures (14) to (17), in which at least a part of the surface that comes into contact with the chemical is laminated with the barrier material having the aromatic ring.

[0023] The semiconductor manufacturing related equipment member of the present disclosure (19) is a semiconductor manufacturing related equipment member in which a chemical is used inside the equipment, and is a member of any combination with any of the present disclosures (14) to (18), in which at least a part of the surface that comes into contact with the chemical is laminated with the barrier material.

[0024] The present disclosure (20) is a member in any combination with any of the present disclosures (1) to (19), in which the mass change rate in the following chemical resistance evaluation is 70.0% by mass or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), size of material (a): 10 mm × 50 mm × 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is completely immersed in a mixed acid with a hydrofluoric acid to nitric acid concentration ratio (molar ratio) of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) or a mixed acid with a hydrofluoric acid to nitric acid concentration ratio (molar ratio) of 1:100 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration), and kept at room temperature (20 ° C) for one day (24 hours) or one week (168 hours). After keeping, the test piece is washed with pure water, water droplets on the surface are wiped off, and it is dried at 60 ° C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20 ° C). The mass change rate (%) is calculated from the measured mass before and after immersion.

[0025] The present disclosure (21) is a component in any combination with any of the present disclosures (1) to (20), in which the mass change rate in the following chemical resistance evaluation is 70.0% by mass or less. (Chemical Resistance Evaluation) A test piece of the component (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in SPM (a 2:1 volume ratio of concentrated sulfuric acid to hydrogen peroxide solution) and held at room temperature (20°C) for 1 day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

[0026] The present disclosure (22) is a component in any combination with any of the present disclosures (1) to (21), in which the mass change rate in the following chemical resistance evaluation is 70.0% by mass or less. (Chemical Resistance Evaluation) A test piece of the component (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in concentrated sulfuric acid (98%) and held at 90°C for 1 week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

[0027] The present disclosure (23) is a member in any combination with any of the present disclosures (1) to (22), in which the mass change rate in the following chemical resistance evaluation is 70.0 mass% or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated on the entire surface of the material (a), size of the material (a): 10 mm x 50 mm x 6 mm, thickness of the coating: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. The test piece after measurement is then immersed in TMAH([(CH ３ )４ N] ＋ [OH] － The test piece is then completely immersed in a 25% concentration solution at 80°C and held for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours. The mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

[0028] The present disclosure (24) is a method for manufacturing a member in any combination with any of the present disclosures (1) to (23), in which the member is manufactured under conditions of a temperature at which the material (a) loses 1% by mass due to thermal decomposition or lower.

[0029] The present disclosure (25) is a method for producing a member according to the present disclosure (24), comprising a step of coating a surface of the material (a) with the barrier material having an aromatic ring by using CVD, sputtering, ion deposition, or vacuum deposition.

[0030] The present disclosure (26) is a semiconductor manufacturing-related device equipped with any combination of components with any of the present disclosures (1) to (23).

[0031] The present disclosure (27) is a semiconductor manufacturing-related device of the present disclosure (26), which is at least one selected from the group consisting of semiconductor manufacturing devices and devices related to semiconductor manufacturing devices.

[0032] The present disclosure (28) is the semiconductor manufacturing-related equipment of the present disclosure (27), wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, wafer processing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, heat treatment equipment, CVD equipment, sputtering equipment, thin film formation equipment, inspection / evaluation equipment, processing equipment, dicing equipment, bonding equipment, packaging equipment, testing equipment, probing equipment, handler, aging equipment, and inspection equipment, and the semiconductor manufacturing equipment-related equipment is at least one selected from the group consisting of conveyance equipment, pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing-related equipment.

[0033] The present disclosure (29) is directed to a method for manufacturing a semiconductor wafer, wherein the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a sputtering apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; the inspection / evaluation apparatus / manufacturing apparatus is a defect repair apparatus; the wafer processing apparatus is a wafer marking apparatus; the resist processing apparatus is at least one selected from the group consisting of a coating apparatus, a developing apparatus, a resist stripping apparatus, an ashing apparatus, and a baking apparatus; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus; the cleaning / drying apparatus is at least one selected from the group consisting of a dry cleaning apparatus, a wet cleaning apparatus, a scrub cleaning apparatus, and a drying apparatus; the heat treatment apparatus is at least one selected from the group consisting of an oxidation apparatus, a diffusion apparatus, and an annealing apparatus; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, a SACVD apparatus, a low-pressure CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the inspection and evaluation apparatus is an Auger electron spectroscopy apparatus; the processing apparatus is at least one selected from the group consisting of a wafer marking apparatus, a back grinding machine, a bump plating apparatus, a back grinder tape applicator, a back grinder, and a back grinder tape peeler; the dicing apparatus is at least one selected from the group consisting of a dicing apparatus and a wafer mounting apparatus; the bonding apparatus is at least one selected from the group consisting of a die bonding apparatus, a hybrid bonding apparatus, a wire bonding apparatus, an inner lead bonding apparatus, an outer lead bonding apparatus, and a flip chip bonding apparatus; the packaging apparatus is at least one selected from the group consisting of a molding apparatus, a deburring apparatus, and a solder processing apparatus; the testing apparatus is at least one selected from the group consisting of an electron beam testing apparatus and a laser beam testing apparatus;the probing device is a prober, the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC extraction device, the inspection device is at least one selected from the group consisting of a thermal testing device, a temperature and humidity testing device, a pressure cooker device, a laser processing system, and a life testing device, the transport device is a stocker, the pure water / chemical device is at least one selected from the group consisting of a pure water production device, an ultrafiltration device, a reverse osmosis device, a sterilization device, a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device, the gas device is at least one selected from the group consisting of a gas generator, a gas purification device, a gas mixing device, a gas detection device, and an exhaust gas treatment device, the clean room device is at least one selected from the group consisting of a clean bench, a clean tunnel, an environmental testing device, an air shower, and a pass box, The manufacturing-related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a taping device, a packaging device, and a measuring device for liquids and gases.

[0034] According to the present disclosure, it is possible to provide a member having excellent chemical resistance, a method for manufacturing the same, and semiconductor manufacturing-related equipment.

[0035] The present disclosure will be specifically described below.

[0036] The present disclosure relates to a member having a material (a) on at least a portion of its surface laminated with a barrier material having an aromatic ring, the member being at least one member selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials. The member of the present disclosure has excellent chemical resistance and adhesion.

[0037] In the member of the present disclosure, at least a portion of the surface of the material (a) is laminated with a barrier material having an aromatic ring.

[0038] The material (a) is not particularly limited, and known organic materials, inorganic materials, etc. can be used, and specific examples include resins, rubbers, metals, ceramics, etc. The material (a) is preferably at least one selected from the group consisting of resins, rubbers, metals, and ceramics, and more preferably at least one selected from the group consisting of resins and rubbers.

[0039] The resin is not particularly limited, and known resins can be used. Examples include polyolefin resins, polyester resins, polyamide (PA) resins, fluororesins, etc. Heat-resistant resins such as engineering plastic resins and super engineering plastic resins can also be suitably used.

[0040] As the resin, from the viewpoint of improving adhesion to a barrier material having an aromatic ring, a non-fluorine-containing resin (a resin that does not contain fluorine) or a heat-resistant resin is preferred, and a fluorine-free heat-resistant resin is more preferred.

[0041] The heat-resistant resin may be any resin generally recognized as having heat resistance, but it is preferable to use a heat-resistant resin other than a fluorine-containing ethylenic polymer (a fluorine-containing ethylenic polymer). In this specification, "heat resistance" means a property that allows continuous use at temperatures of 150°C or higher.

[0042] Examples of the heat-resistant resin include polyamideimide resin (PAI), polyimide resin (PI), polyethersulfone resin (PES), polyetherimide resin (PEI), aromatic polyether ketone resin (PAEK), aromatic polyester resin, and polyarylene sulfide resin (PAS). One type may be used alone, or two or more types may be used in combination.

[0043] PAI is a resin composed of a polymer having amide and imide bonds in its molecular structure. The PAI is not particularly limited, and examples include resins composed of high-molecular-weight polymers obtained by various reactions, such as the reaction of an aromatic diamine having an amide bond in its molecule with an aromatic tetracarboxylic acid such as pyromellitic acid; the reaction of an aromatic tricarboxylic acid such as trimellitic anhydride with a diamine such as 4,4-diaminophenyl ether or a diisocyanate such as diphenylmethane diisocyanate; and the reaction of a dibasic acid having an aromatic imide ring in its molecule with a diamine. From the perspective of excellent heat resistance, PAI is preferably composed of a polymer having an aromatic ring in its main chain. PAI features include high thermal stability, abrasion resistance, and creep resistance that is resistant to change even under load. It is also thermoplastic and has excellent melt processability, allowing it to be molded by extrusion or compression molding. The melt flow rate (MFR) is preferably in the range of 10 to 80 g / 10 min.

[0044] PI is a resin made of a polymer having an imide bond in its molecular structure. The PI is not particularly limited, and examples include resins made of high-molecular-weight polymers obtained by the reaction of aromatic tetracarboxylic anhydrides such as pyromellitic anhydride. From the viewpoint of excellent heat resistance, PI made of a polymer having an aromatic ring in the main chain is preferred. PIs are characterized by high heat resistance, insulating properties, low dielectric constant, low dielectric loss, and radiation resistance, and are classified into non-thermoplastic polyimides, thermoplastic polyimides, thermosetting polyimides, and soluble polyimides. Furthermore, the MFR (melt flow rate) is preferably in the range of 0.1 to 50 g / 10 min.

[0045] PES has the following general formula:

[0046]

[0047] The PES is a resin made of a polymer having a repeating unit represented by the formula: The PES is not particularly limited, and examples include resins made of a polymer obtained by polycondensation of dichlorodiphenyl sulfone and bisphenol. PES is characterized by its high heat resistance, with a glass transition temperature (Tg) of 225°C. It is an amorphous plastic with excellent properties, such as dimensional stability, high fluidity, and flame retardancy, in addition to high heat resistance, and is used in a wide range of industrial applications, including housings for electrical and electronic components and automotive parts. Furthermore, the MFR (melt flow rate) is preferably in the range of 5 to 60 g / 10 min.

[0048] PEI can be, for example, one having an imide bond and an ether bond in the molecule. The glass transition temperature of PEI is preferably 180°C or higher, more preferably 200°C or higher, and preferably 300°C or lower, more preferably 280°C or lower. PEI is an amorphous super engineering plastic that, in addition to high heat resistance, has excellent flame retardancy, mechanical strength, electrical insulation, radiation resistance, UV resistance, and moldability. It is also used in a wide range of industrial applications, including aircraft parts, various insulation parts, food manufacturing equipment, steam cleaning equipment, medical equipment (steam resistance), electrical and electronic parts (e.g., Sonnet connectors), office equipment parts, and automotive lights (heat resistance and good plating properties). The melt flow rate (MFR) is preferably in the range of 1 to 30 g / 10 min.

[0049] The aromatic polyetherketone resin is a resin containing a repeating unit composed of an arylene group, an ether group [—O—], and a carbonyl group [—C(═O)—]. Examples of the aromatic polyetherketone resin include polyetherketone resin (PEK), polyetheretherketone resin (PEEK), polyetherketoneketone resin (PEKK), polyetheretherketoneketone resin (PEEKK), and polyetherketone ester resin. The aromatic polyetherketone resins can be used alone or in combination of two or more. The aromatic polyetherketone resin is preferably at least one selected from the group consisting of PEK, PEEK, PEKK, PEEKK, and polyetherketone ester resin, more preferably at least one selected from the group consisting of PEEK and PEKK, and even more preferably PEEK. PEEK has a high continuous use temperature of 260°C and excellent heat resistance, hot water resistance, flame retardancy, mechanical properties, and electrical properties, making it suitable for use in aerospace, automobiles, medical equipment, 3D printers, food, and semiconductors. Its melt flow rate (MFR) is preferably in the range of 1 to 20 g / 10 min.

[0050] PAS is represented by the following general formula:

[0051]

[0052] (wherein Ar represents an arylene group). The PAS is not particularly limited, and examples include polyphenylene sulfide (PPS). PPS is a thermoplastic resin with a normal heat resistance temperature of 220-240°C and cold resistance down to -20°C. It has excellent fatigue and creep properties, as well as good weather resistance and hydrolysis resistance. It is a flame-retardant material without the addition of flame retardants, and also has heat shock resistance. It also has good moldability and a high degree of freedom in the shape of molded products, making it used in the electrical and electronic component field for connectors, various electronic components, and automotive parts. The melt flow rate (MFR) is preferably in the range of 10-50 g / 10 min.

[0053] The heat-resistant resin is preferably at least one selected from the group consisting of PAI, PI, PES, PEI, aromatic polyether ketone resin, and PAS, more preferably at least one selected from the group consisting of PEI, aromatic polyether ketone resin, and PAS, and even more preferably aromatic polyether ketone resin. Also, the heat-resistant resin is preferably at least one selected from the group consisting of PPS, PEI, and PEEK.

[0054] The rubber may be either a fluororubber or a non-fluororubber (rubber not containing fluorine). Specific examples include fluororubber, diene rubbers such as acrylonitrile-butadiene rubber (NBR) or its hydride (HNBR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), butadiene rubber (BR), natural rubber (NR), isoprene rubber (IR), and cyclopentene rubber (CPR), ethylene-propylene-termonomer copolymer rubber, silicone rubber, butyl rubber, epichlorohydrin rubber, acrylic rubber, chlorinated polyethylene (CPE), chlorosulfonated ethylene rubber (CSM), polyblends of acrylonitrile-butadiene rubber and vinyl chloride (PVC-NBR), ethylene propylene diene rubber (EPDM), and ethylene propylene rubber (EPM). Of these, non-fluororubbers are preferred from the viewpoint of improving adhesion to barrier materials having aromatic rings.

[0055] The metal is not particularly limited, and known metals can be used, including iron, steel, non-ferrous metals, etc. Examples of steel include SPC material, SS material, SC material, SK material, stainless steel, chromium-molybdenum high-tensile steel, white cast iron, gray cast iron, and spheroidal graphite cast iron. Examples of non-ferrous metals include aluminum-aluminum alloy, copper-copper alloy, zinc-zinc alloy, titanium-titanium alloy, magnesium-magnesium alloy, and nickel-nickel alloy.

[0056] The ceramic is not particularly limited, and known ceramics can be used, such as alumina, zirconia, aluminum nitride, silicon carbide, silicon oxide, silicon nitride, forsterite, steatite, cordierite, sialon, machinable ceramics, barium titanate, lead zirconate, ferrite, and mullite.

[0057] Alumina has the characteristics of excellent electrical insulation, heat resistance, abrasion resistance, mechanical strength, relatively high thermal conductivity, and is highly versatile.

[0058] Zirconia has excellent thermal properties, a melting point of 2700°C, a maximum operating temperature of approximately 1200°C, a high thermal shock resistance of Δ400°C, and a significantly lower thermal conductivity than other ceramics.

[0059] Aluminum nitride is characterized by its extremely high thermal conductivity, excellent heat dissipation, insulation, and thermal shock resistance, and is used as a substrate material. Aluminum nitride substrates can be metallized.

[0060] Silicon carbide is characterized by its chemical and physical stability, high hardness, extremely high thermal conductivity compared to other ceramics, and semi-conductivity.

[0061] Silicon oxide is characterized by its excellent heat resistance and thermal shock resistance, and its Vickers hardness is 8.6 to 9.8 GPa.

[0062] Silicon nitride is characterized by its low coefficient of thermal expansion, chemical stability, and excellent wear resistance and electrical insulation, making it used in a wide range of industrial fields.

[0063] Forsterite is characterized by its high insulation resistance and is therefore widely used as an electrical insulating material. Its dielectric constant is 6.5 and its dielectric loss tangent (Tan δ) is small, making it useful as a high-frequency insulating material.

[0064] The characteristics of steatite are low high frequency loss, high insulation resistance at high temperatures, and high mechanical strength.

[0065] A characteristic of cordierite is that when heated, the crystals expand in the radial direction and contract in the height direction.

[0066] The characteristics of sialon include excellent heat resistance, mechanical strength in high-temperature environments, thermal shock resistance, and wear resistance, as well as low thermal expansion, high rigidity, and corrosion resistance.

[0067] Machinable ceramics are characterized by their ease of cutting, suitability for fine and precision machining, and low porosity, which reduces outgassing and helium permeation, providing stable performance even in a vacuum.

[0068] Barium titanate is characterized by its extremely high dielectric constant, which makes it widely used as a dielectric material in multilayer ceramic capacitors and the like, and its extremely high refractive index, which makes it also used as an optical material.

[0069] Lead zirconate is characterized by a large piezoelectric charge coefficient, a medium dielectric constant, and a high coupling coefficient.

[0070] The characteristics of ferrite are that it is a magnetic material that can become a strong magnet, is less conductive to electricity than metallic magnetic materials, and because it is a baked oxide (porcelain), it is resistant to rust and chemicals.

[0071] Mullite oxide is characterized by its excellent heat resistance, impact resistance, and abrasion resistance, and can be produced at relatively low cost.

[0072] Among the above ceramics, zirconia, aluminum nitride, silicon oxide, forsterite, steatite, cordierite, and sialon are preferred, with zirconia, aluminum nitride, and silicon oxide being particularly preferred, from the viewpoint of increasing the effect of laminating with a barrier material.

[0073] The temperature at which the material (a) loses 1% by mass due to thermal decomposition (hereinafter also referred to as the 1% thermal decomposition temperature) is preferably 560°C or lower. From the viewpoint of improving chemical resistance, the upper limit of the 1% thermal decomposition temperature is more preferably 500°C, even more preferably 450°C. The lower limit is not particularly limited, but is preferably 150°C, more preferably 200°C, and even more preferably 250°C. The 1% thermal decomposition temperature is measured using a thermal analyzer STA7200 manufactured by Hitachi High-Tech Science Corporation. The measurement is performed in a nitrogen purge atmosphere at 200 mL / min. A 10 mg sample is placed in an aluminum pan, held at 25°C for 10 minutes, and then heated to 600°C at a heating rate of 10°C / min. The temperature at which a 1% mass loss occurs from the initial mass is defined as the 1% thermal decomposition temperature.

[0074] To enhance adhesion, the material (a) may be degreased in advance, preferably by wiping with ethanol or isopropyl alcohol or ultrasonic cleaning, though not particularly limited thereto. Pretreatments include roughening the surface by sandblasting or the like, or by chemical conversion treatment such as alumite treatment, or by plasma treatment or corona treatment, and plasma treatment or corona treatment is particularly preferred.

[0075] The material (a) may be surface-treated with any known method to enhance adhesion, although this is not particularly limited. Specifically, the material may be treated with a silane coupling agent, such as an epoxysilane, aminosilane, isocyanatesilane, vinylsilane, acrylicsilane, hydrophobic alkylsilane, phenylsilane, or fluorinated alkylsilane, which has a reactive functional group.

[0076] Examples of the silane coupling agent include epoxy silanes such as γ-glycidoxypropyltriethoxysilane and β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, amino silanes such as aminopropyltriethoxysilane and N-phenylaminopropyltrimethoxysilane, isocyanate silanes such as 3-isocyanatepropyltrimethoxysilane, vinyl silanes such as vinyltrimethoxysilane, and acrylic silanes such as acryloxytrimethoxysilane, with 3-methacryloxypropyltriethoxysilane being preferred.

[0077] The member of the present disclosure preferably has a tape peel strength of 3 or more, which indicates the adhesiveness between the material (a) and the aromatic ring-containing barrier material.

[0078] The tape peel strength in this disclosure was evaluated by the following method. Cellotape (registered trademark) manufactured by Nichiban Co., Ltd. (tape width: 18 mm) used in the JIS-K5600 adhesion test (cross-cut method) was used to attach a 15 mm long piece of cellotape to the barrier material without creating any air bubbles. The attached tape was peeled off at a 90° angle, revealing the barrier layer (area 270 mm2) of the barrier material to which the cellotape had been attached. ２ ) The area of ​​the barrier layer peeled off was calculated using image analysis (Python) and evaluated as follows: 1: 95% or more of the barrier layer peeled off 2: 60% or more but less than 95% of the barrier layer peeled off 3: 40% or more but less than 60% of the barrier layer peeled off 4: 5% or more but less than 40% of the barrier layer peeled off 5: Less than 5% of the barrier layer peeled off

[0079] In this specification, the above-mentioned barrier material having an aromatic ring refers to a material having barrier properties and containing an aromatic ring in the material. The aromatic content (the proportion of carbon atoms in the molecule that constitute the aromatic ring) of the above-mentioned barrier material having an aromatic ring is not particularly limited, but is preferably 20% or more, more preferably 35% or more, particularly preferably 55% or more, more particularly preferably 70% or more, and preferably 80% or less. The above-mentioned aromatic content can be determined from the molecular structure by calculating the proportion of carbon atoms in the molecule that constitute the aromatic ring. The above-mentioned barrier material having an aromatic ring can be used without particular limitation as long as it is possible to form a coating containing a barrier material having an aromatic ring on the surface of the material.

[0080] Examples of the aromatic ring-containing barrier material include compounds represented by the following formulas (a) to (c): As the aromatic ring-containing barrier material, at least one selected from the group consisting of compounds represented by the following formula (a), compounds represented by the following formula (b), and compounds represented by the following formula (c) is preferred, and the compound represented by the following formula (a) is more preferred.

[0081] (In the formula, X １ ~X ４ each independently represents hydrogen, halogen, a monovalent hydrocarbon group, or an optionally fluorinated alkoxy group. １ ~Y ４ each independently represents hydrogen or halogen, and n represents an integer of 1 or more.

[0082] Above X １ ~X ４ , the above Y １ ~Y ４ Examples of the halogen include fluorine (F), chlorine (Cl), bromine (Br), and iodine (I). Of these, fluorine and chlorine are preferred.

[0083] Above X １ ~X ４The monovalent hydrocarbon group may have a heteroatom such as a nitrogen atom or an oxygen atom. The monovalent hydrocarbon group may be linear, branched, or cyclic. The number of carbon atoms in the monovalent hydrocarbon group is preferably 1 to 8, more preferably 1 to 5, and even more preferably 1 to 3. Examples of the monovalent hydrocarbon group include alkyl groups, alkenyl groups, and alkynyl groups having the above carbon numbers.

[0084] Above X １ ~X ４ The optionally fluorinated alkoxy group may have a heteroatom such as a nitrogen atom or an oxygen atom. The optionally fluorinated alkoxy group may be linear, branched, or cyclic. The number of carbon atoms in the optionally fluorinated alkoxy group is preferably 1 to 8, more preferably 1 to 5, and even more preferably 1 to 3. Examples of the optionally fluorinated alkoxy group include -OCF ３ group, -OCF ２ CF ３ groups, etc.

[0085] Above X １ ~X ４ Among the hydrogen, halogen and monovalent hydrocarbon groups of the above Y, hydrogen and halogen are preferred, and hydrogen, fluorine and chlorine are more preferred. １ ~Y ４ Among hydrogen and halogen, hydrogen, fluorine and chlorine are preferred.

[0086] Examples of the above-mentioned aromatic ring-containing barrier material include compounds represented by the following formula:

[0087]

[0088]

[0089]

[0090]

[0091]

[0092]

[0093]

[0094] As the above-mentioned aromatic ring-containing barrier material, a paraxylylene polymer called parylene is preferred from the viewpoint of chemical resistance.

[0095] The paraxylylene-based polymer (parylene) includes parylene with no substituents on the benzene ring, as shown in formula (1) below (hereinafter also referred to as parylene N), as well as parylene in which various functional groups have been introduced into the benzene ring and parylene in which hydrogen atoms of methylene groups adjacent to the benzene ring have been replaced. Specific examples include a polymer represented by formula (2) below in which chlorine has been introduced into the benzene ring (hereinafter also referred to as parylene C), a polymer represented by formula (3) below in which a methyl group has been introduced (hereinafter also referred to as parylene M), a polymer represented by formula (4) below in which fluorine has been introduced into the methylene group (hereinafter also referred to as parylene F), a polymer represented by formula (5) below in which two chlorine atoms have been introduced into the benzene ring (hereinafter also referred to as parylene D), a polymer represented by formula (6) below in which fluorine has been introduced into the methylene group (hereinafter also referred to as parylene HT), and a polymer represented by formula (7) below in which fluorine has been introduced into the benzene ring (hereinafter also referred to as parylene BF), where n is an integer of 1 or greater. Among these, at least one selected from the group consisting of polyparaxylene and polyparaxylene having a halogen introduced on the benzene ring is preferred, at least one selected from the group consisting of parylene N, parylene C, parylene D, and parylene BF is more preferred, at least one selected from the group consisting of parylene N, parylene C, and parylene D is even more preferred, at least one selected from the group consisting of parylene C and parylene D is even more preferred, and parylene C is particularly preferred.

[0096]

[0097]

[0098]

[0099]

[0100]

[0101]

[0102]

[0103] The coating containing the above-mentioned aromatic ring-containing barrier material can be formed by a known vapor deposition method, such as vacuum deposition, sputtering, ion plating, ion vapor deposition (IVD), and plasma vapor deposition (CVD). Of these, CVD, sputtering, ion vapor deposition, and vacuum vapor deposition are preferred.

[0104] In the member of the present disclosure, from the viewpoint of chemical resistance, the coating containing the aromatic ring-containing barrier material preferably has a thickness of 0.01 to 100 μm. The lower limit of the thickness is more preferably 0.1 μm, and even more preferably 1 μm. The upper limit of the thickness is more preferably 75 μm, and even more preferably 50 μm.

[0105] In the coating containing the above-mentioned barrier material having an aromatic ring, the content of the barrier material having an aromatic ring in the coating (100% by mass) is preferably 90 to 100% by mass. The lower limit of the content is more preferably 93% by mass, and even more preferably 95% by mass. The upper limit of the content is not particularly limited and may be 100% by mass.

[0106] The coating containing the above-mentioned aromatic ring-containing barrier material may be annealed. Annealing increases the crystallinity of the coating, improving its chemical resistance, cut-through resistance, hardness, and abrasion resistance. The crystallinity of the coating is measured using an X-ray diffractometer (XRD) under conditions of a tube voltage of 40 kV and a tube current of 40 mA, and a peak intensity at 14 to 17° originating from the barrier material can be confirmed.

[0107] The annealing method is not particularly limited, but can be performed by heating the test piece in a constant-temperature air-blowing incubator, and may be performed in an air atmosphere, an inert gas atmosphere, or a vacuum. Furthermore, the degree of crystallinity can be controlled by controlling the temperature and time. The annealing atmosphere is not particularly limited, but from the viewpoint of suppressing degradation of the barrier film, an inert gas atmosphere or a vacuum is preferable, and a nitrogen atmosphere or an argon atmosphere is particularly preferable. The heating time is not particularly limited, but from the viewpoint of increasing the degree of crystallinity, 10 seconds to 3 hours is preferable, 30 seconds to 2 hours 30 minutes is more preferable, and 1 hour to 2 hours is particularly preferable. The heating temperature is not particularly limited, but from the viewpoint of increasing the degree of crystallinity, 50°C to 300°C is preferable, 80°C to 250°C is more preferable, and 100°C to 210°C is particularly preferable.

[0108] The member of the present disclosure is used as at least one member selected from the group consisting of building materials, mobility members, aerospace members, semiconductor members, and information and communication members. As the member, a semiconductor member is preferable in terms of excellent chemical resistance, and a semiconductor manufacturing-related equipment member (semiconductor manufacturing equipment article) is more preferable.

[0109] Examples of the building materials (construction materials) include interior architectural materials such as baseboards, ceiling materials, and plumbing materials, and exterior architectural materials such as waterproof sheets, waterproofing materials, exterior wall materials, and roofing materials. Examples of the mobility materials include parts used in ferries, trains, automobiles, motorcycles, drones, robots, and the like. Examples of the aerospace materials include exterior and interior materials for aircraft, rockets, and the like, wire coating materials, cable protection materials, jet engines, cabin interior materials, and parts thereof. Examples of the semiconductor materials include process materials used in semiconductor manufacturing and parts for semiconductor manufacturing-related equipment. Examples of the information and communication materials include parts for devices such as wireless LAN transmission and reception circuits, circuit boards, and parts for optical communication devices.

[0110] The member of the present disclosure is preferably applicable to at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials, since chemical resistance is required. In particular, the member of the present disclosure is preferably applicable to the piping, nozzles, tubes, etc. in semiconductor manufacturing related equipment.

[0111] The piping is not particularly limited, but examples of its shape include a robust pipe type, a flexible hose that can be incorporated to fit the installation space, a bellows pipe with a large diameter that can be bent, etc. The inside of the piping may be polished with high precision so as not to generate dust and not to disturb the liquid flow or gas flow.

[0112] The nozzle is not particularly limited, but the tip may be precisely machined to match the size and shape of the part, and in addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0113] The tube is not particularly limited, but the tube diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 mm to 25 mm. A material having stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (low contamination of the chemical solution by extracted ions) is used.

[0114] The tank or container is not particularly limited, but may be precision cleaned (water washing, acetic acid immersion, wiping cleaning, pure water cleaning, etc.) to remove dirt and residues. Packaging after cleaning may be carried out in a clean room or clean booth environment.

[0115] The joints and valves are not particularly limited, but are required to be oil-free, particle-free, dead space-free, and external leak-free, and the size is preferably in the range of Φ3.2 to 40.0 mm, and more preferably in the range of Φ3.2 to 12.7 mm.

[0116] The pump is not particularly limited, but may be required to have retractability.

[0117] The spin chuck is not particularly limited, but may be required to have hardness, corrosion resistance, and dimensional stability, and may be provided with electrical conductivity.

[0118] Although there are no particular limitations on the O-rings and sealing materials, the required material properties are excellent elasticity, good compression set, high wear resistance, excellent heat resistance, resistance to corrosion by applied liquids and gases, and long life. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as being exposed to various plasmas, and therefore may be required to have high heat resistance, chemical resistance, and plasma resistance.

[0119] The packing and gasket are not particularly limited, but may be required to have a low coefficient of friction and excellent abrasion resistance, and may also be required to have heat resistance, cold resistance, pressure resistance, and chemical resistance to prevent leakage.

[0120] The washer is not particularly limited, but is expected to be used in a clean room or the like and may be required to have durability, corrosion resistance, and rust prevention properties.

[0121] The semiconductor manufacturing equipment of the above-mentioned semiconductor manufacturing related equipment includes photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, descum equipment), thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high current ion implantation equipment, medium current ion implantation equipment, high energy ion implantation equipment), thin film formation equipment, CVD equipment (high pressure CVD equipment, SACVD, low pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectroscopy equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machines, bump plating equipment, back grinder tape applicators, back grinders, back grinder tape peelers), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment, outer lead bonding equipment, flip chip bonding equipment), packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (proppers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), other inspection equipment (cold-heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life test equipment), etc.Equipment related to semiconductor manufacturing equipment includes various transport devices (intra-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical liquid equipment (pure water production equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various taping equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0122] Among these, semiconductor manufacturing equipment that utilizes the properties of paraxylylene-based polymers (parylene) includes thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), thin film formation equipment, CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), and inspection and evaluation equipment. (Auger electron spectroscopy apparatus), other processing equipment (wafer marking equipment, back grinding machine, bump plating equipment, tape application machine for back grinder, back grinder, tape peeling machine for back grinder), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonding equipment, outer lead bonding equipment, flip chip bonding equipment), packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (propper), handler, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), other inspection equipment (cold heat test equipment, temperature and humidity test equipment, pressure cooker equipment, laser processing system, various life test equipment).Preferred examples of equipment related to semiconductor manufacturing equipment include various conveying devices (storage devices), pure water / chemical liquid equipment (pure water manufacturing equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning / drying equipment, flow rate control equipment, various taping equipment, various packaging equipment, and measuring equipment for liquids and various gases).

[0123] From the viewpoint of laminating a paraxylylene-based polymer (parylene) and making use of its chemical resistance properties, particularly preferred semiconductor manufacturing equipment includes thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment, resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning / drying equipment (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, metal CVD equipment, ALD equipment), plating equipment, bump plating equipment, and other inspection equipment (various life test equipment). Particularly preferred examples of equipment related to semiconductor manufacturing equipment include pure water / chemical liquid equipment (slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (environmental testing equipment), and other manufacturing-related equipment (various jig cleaning / drying equipment, flow rate control equipment, various packaging equipment, and measuring equipment for liquids and various gases).

[0124] From the viewpoint of laminating paraxylylene-based polymers (parylene) and making use of their flexibility, more preferred semiconductor manufacturing equipment includes thin film formation / etching / cleaning / drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect repair equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, metal CVD equipment, ALD equipment), plating equipment, bump plating equipment, and other inspection equipment (cold-heat test equipment, temperature and humidity test equipment, pressure cooker equipment, laser processing systems, various life test equipment). More preferred examples of equipment related to semiconductor manufacturing equipment include pure water / chemical liquid equipment (slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (environmental testing equipment), and other manufacturing-related equipment (various jig cleaning / drying equipment, flow rate control equipment, various packaging equipment, and measuring equipment for liquids and various gases).

[0125] As described above, the members of the present disclosure can be suitably used as semiconductor manufacturing-related equipment components (semiconductor manufacturing-related equipment articles), but because of their excellent chemical resistance, they are more suitable as components constituting semiconductor manufacturing-related equipment in which chemicals are used inside the equipment.

[0126] The chemicals are not particularly limited, but include chemicals used in semiconductor manufacturing related equipment, etc. The chemicals can be used alone or in combination of two or more.

[0127] Specific examples of the chemical include TMAH ([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ O mixture), phosphoric acid, and hydrochloric acid. ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ At least one selected from the group consisting of a mixture of hydrofluoric acid and nitric acid, phosphoric acid, and hydrochloric acid is preferred, a mixed acid of hydrofluoric acid and nitric acid, hydrofluoric acid, and SPM is more preferred, and a mixed acid of hydrofluoric acid and nitric acid, and SPM is more preferred.

[0128] Other examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas. Also preferred as the chemical is at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0129] Examples of the silicon-based gas include monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the arsenic-based gas include arsine, arsenic(III) fluoride, arsenic(V) fluoride, arsenic(III) chloride, and arsenic(V) chloride. Examples of the phosphorus-based gas include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gas include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the metal hydride gas include hydrogen selenide, monogermane, hydrogen telluride, stibine, and tin hydride. Examples of the metal alkyl gas include trialkylgallium and trialkylindium. Examples of the halogenated hydrocarbon gas include tetrafluoromethane, trifluoromethane, difluoromethane, hexafluoropropane, octafluoropropane, and octafluorocyclobutane. Examples of the halogen / halide gas include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gas include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and octafluorocyclobutane are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0130] In order to ensure chemical resistance, it is preferable that at least a part of the surface of the semiconductor manufacturing-related equipment member (semiconductor manufacturing-related equipment article) that comes into contact with the chemicals is laminated with the barrier material having the aromatic ring, and it is more preferable that the entire surface that comes into contact with the chemicals is laminated with the barrier material having the aromatic ring.

[0131] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 70.0 mass% or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm × 50 mm × 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After measurement, the test piece is completely immersed in a mixed acid in which the concentration ratio (molar ratio) of hydrofluoric acid to nitric acid is 1:5 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60%) or a mixed acid in which the concentration ratio (molar ratio) of hydrofluoric acid to nitric acid is 1:100 (hydrofluoric acid concentration: 50% concentration, nitric acid concentration: 60%), and is kept at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0132] The upper limit of the mass change rate is more preferably 20% by mass, even more preferably 10% by mass, and even more preferably 5% by mass. The lower limit is not particularly limited, and is most preferably 0% by mass.

[0133] In terms of chemical resistance, the member of the present disclosure preferably has a mass change rate of 70.0% by mass or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm × 50 mm × 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in SPM (a 2:1 volume ratio of concentrated sulfuric acid to hydrogen peroxide solution) and held at room temperature (20°C) for 1 day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

[0134] The upper limit of the mass change rate is more preferably 20% by mass, even more preferably 10% by mass, and even more preferably 5% by mass. The lower limit is not particularly limited, and is most preferably 0% by mass.

[0135] From the viewpoint of chemical resistance, the member of the present disclosure preferably exhibits a mass change rate of 70.0% by mass or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm × 50 mm × 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in concentrated sulfuric acid (98%) and held at 90°C for 1 week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

[0136] The upper limit of the mass change rate is more preferably 20% by mass, even more preferably 10% by mass, and even more preferably 5% by mass. The lower limit is not particularly limited, and is most preferably 0% by mass.

[0137] From the viewpoint of chemical resistance, the member of the present disclosure preferably has a mass change rate of 70.0 mass % or less in the following chemical resistance evaluation. (Chemical Resistance Evaluation) A test piece of the above member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated on the entire surface of material (a), size of material (a): 10 mm x 50 mm x 6 mm, thickness of coating: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. The test piece after measurement is immersed in TMAH([(CH ３ ) ４ N] ＋ [OH] －) (25% concentration), completely immersed at 80 ° C and held for 1 week (168 hours). After measurement, the test piece was completely immersed in concentrated sulfuric acid (98%) and held at 90 ° C for 1 week (168 hours). After holding, the test piece was washed with pure water, water droplets on the surface were wiped off, dried at 60 ° C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20 ° C). After holding, the test piece was washed with pure water, water droplets on the surface were wiped off, dried at 60 ° C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20 ° C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0138] The upper limit of the mass change rate is more preferably 10% by mass, even more preferably 5% by mass, and even more preferably 1% by mass. The lower limit is not particularly limited, and is most preferably 0% by mass.

[0139] The member of the present disclosure can be manufactured by a manufacturing method including a step of forming a coating containing the above-mentioned barrier material having an aromatic ring on the surface of the above-mentioned material (a) using, for example, the above-mentioned CVD, sputtering, ion vapor deposition, vacuum vapor deposition, or the like, to produce a member in which at least a portion of the surface of the material (a) is laminated with the above-mentioned barrier material having an aromatic ring. In the above-mentioned manufacturing method, a parylene film or the like can be formed using the above-mentioned CVD, sputtering, ion vapor deposition, vacuum vapor deposition, or the like. The present disclosure also relates to a manufacturing method for manufacturing the above-mentioned member under conditions at or below the temperature at which the above-mentioned material (a) loses 1% by mass due to thermal decomposition. The manufacturing method of the present disclosure preferably includes a step of coating the surface of the above-mentioned material (a) with the above-mentioned barrier material having an aromatic ring using CVD, sputtering, ion vapor deposition, or vacuum vapor deposition.

[0140] The semiconductor manufacturing related device of the present disclosure is preferably a semiconductor manufacturing related device equipped with the above-described member. By using the member of the present disclosure, excellent chemical resistance can be imparted to the device.

[0141] The semiconductor manufacturing-related device of the present disclosure is preferably one of the semiconductor manufacturing devices and related devices described above. Also, the semiconductor manufacturing-related device of the present disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing devices and related devices for semiconductor manufacturing devices.

[0142] The semiconductor manufacturing equipment is at least one selected from the group consisting of thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, wafer processing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, heat treatment equipment, CVD equipment, sputtering equipment, thin film formation equipment, inspection / evaluation equipment, processing equipment, dicing equipment, bonding equipment, packaging equipment, testing equipment, probing equipment, handler, aging equipment, and inspection equipment, and it is preferable that the semiconductor manufacturing equipment-related equipment is at least one selected from the group consisting of conveyance equipment, pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing-related equipment.

[0143] the thin film formation / etching / cleaning / drying equipment is at least one selected from the group consisting of a vacuum deposition equipment, a sputtering equipment, a cleaning equipment, a drying equipment, and a scrub cleaning equipment; the inspection / evaluation equipment / manufacturing equipment is a defect repair equipment; the wafer processing equipment is a wafer marking equipment; the resist processing equipment is at least one selected from the group consisting of a coating equipment, a developing equipment, a resist stripping equipment, an ashing equipment, and a baking equipment; the etching equipment is at least one selected from the group consisting of a dry etching equipment and a wet etching equipment; the cleaning / drying equipment is at least one selected from the group consisting of a dry cleaning equipment, a wet cleaning equipment, a scrub cleaning equipment, and a drying equipment; the heat treatment equipment is at least one selected from the group consisting of an oxidation equipment, a diffusion equipment, and an annealing equipment; the CVD equipment is at least one selected from the group consisting of a high-pressure CVD equipment, a SACVD equipment, a low-pressure CVD equipment, a metal CVD equipment, and an ALD equipment; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the inspection and evaluation apparatus is an Auger electron spectroscopy apparatus; the processing apparatus is at least one selected from the group consisting of a wafer marking apparatus, a back grinder, a bump plating apparatus, a back grinder tape applicator, a back grinder, and a back grinder tape peeler; the dicing apparatus is at least one selected from the group consisting of a dicing apparatus and a wafer mounting apparatus; the bonding apparatus is at least one selected from the group consisting of a die bonding apparatus, a hybrid bonding apparatus, a wire bonding apparatus, an inner lead bonding apparatus, an outer lead bonding apparatus, and a flip chip bonding apparatus; the packaging apparatus is at least one selected from the group consisting of a molding apparatus, a deburring apparatus, and a solder processing apparatus; the testing apparatus is at least one selected from the group consisting of an electron beam testing apparatus and a laser beam testing apparatus; The ploping device is a plopper,the aging equipment is at least one selected from the group consisting of an aging equipment, a burn-in equipment, an IC insertion equipment, and an IC extraction equipment; the inspection equipment is at least one selected from the group consisting of a thermal testing equipment, a temperature and humidity testing equipment, a pressure cooker equipment, a laser processing system, and a life testing equipment; the conveying equipment is a stocker; the pure water / chemical liquid equipment is at least one selected from the group consisting of a pure water production equipment, an ultrafiltration equipment, a reverse osmosis equipment, a sterilization equipment, a chemical supply equipment, a slurry supply equipment, a chemical purification equipment, and a waste liquid treatment equipment; the gas equipment is at least one selected from the group consisting of a gas generation equipment, a gas purification equipment, a gas mixing equipment, a gas detection equipment, and an exhaust gas treatment equipment; the clean room equipment is at least one selected from the group consisting of a clean bench, a clean tunnel, an environmental testing equipment, an air shower, and a pass box; The manufacturing-related equipment is preferably at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a taping device, a packaging device, and a liquid / gas measuring device.

[0144] Although the embodiments have been described above, it will be understood that various changes in form and details can be made without departing from the spirit and scope of the claims.

[0145] The present disclosure will now be described in more detail with reference to examples, but the present disclosure is not limited to these examples.

[0146] Various physical properties were measured by the following methods.

[0147] <Aromatic content> The aromatic content was determined by calculating the ratio of carbon atoms constituting aromatic rings to carbon atoms in the molecule from the molecular structure.

[0148] <Tape peel strength measurement> Cellotape (registered trademark) manufactured by Nichiban Co., Ltd. (tape width: 18 mm), which is used in the JIS-K5600 adhesion test (cross-cut method), was used to apply a 15 mm long cellotape to the barrier material without creating any air bubbles. The applied tape was peeled off at a 90° angle, and the barrier layer (area 270 mm2) of the barrier material to which the cellotape had been applied was measured. ２) The area of ​​the barrier layer peeled off was calculated using image analysis (Python) and evaluated as follows: 1: 95% or more of the barrier layer peeled off 2: 60% or more but less than 95% of the barrier layer peeled off 3: 40% or more but less than 60% of the barrier layer peeled off 4: 5% or more but less than 40% of the barrier layer peeled off 5: Less than 5% of the barrier layer peeled off

[0149] <Chemical Resistance Evaluation 1-1> In Chemical Resistance Evaluation 1-1, chemical resistance to acidic chemicals was evaluated under the test conditions listed in Table 1 by the following method. The test piece was dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C) conditions. The test piece after measurement was completely immersed in a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid and nitric acid of 1:5 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration) or a mixed acid with a concentration ratio (molar ratio) of hydrofluoric acid and nitric acid of 1:100 (hydrofluoric acid concentration 50% concentration, nitric acid concentration 60% concentration), and held at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours. The mass of the test piece after immersion was measured under room temperature (20°C) conditions. The mass change rate (%) was calculated from the measured masses before and after immersion.

[0150] <Chemical Resistance Evaluation 1-2> In Chemical Resistance Evaluation 1-2, chemical resistance to acidic chemicals was evaluated under the test conditions listed in Table 1 by the following method. The test specimen was dried at 60°C for 2 hours. After drying, the mass of the test specimen before immersion was measured at room temperature (20°C). After measurement, the test specimen was completely immersed in SPM (a 2:1 volume ratio of concentrated sulfuric acid to hydrogen peroxide solution) and held at room temperature (20°C) for 1 day (24 hours). After holding, the test specimen was washed with pure water, water droplets on the surface were wiped off, and the specimen was dried at 60°C for 12 hours. The mass of the test specimen after immersion was measured at room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0151] <Chemical Resistance Evaluation 1-3> In Chemical Resistance Evaluation 1-3, chemical resistance to acidic chemicals was evaluated by the following method under the test conditions listed in Table 1. The test specimen was dried at 60°C for 2 hours. After drying, the mass of the test specimen before immersion was measured at room temperature (20°C). After measurement, the test specimen was completely immersed in concentrated sulfuric acid (98%) and held at 90°C for 1 week (168 hours). After holding, the test specimen was washed with pure water, water droplets on the surface were wiped off, and the specimen was dried at 60°C for 12 hours. The mass of the test specimen after immersion was measured at room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0152] <Chemical Resistance Evaluation 2> In Chemical Resistance Evaluation 2, chemical resistance to basic chemicals was evaluated by the following method under the test conditions shown in Table 1. The test piece was dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was immersed in TMAH([(CH ３ ) ４ N] ＋ [OH] － The test pieces were completely immersed in a 25% concentration solution at 80°C and held for one week (168 hours). After holding, the test pieces were washed with pure water, water droplets on the surface were wiped off, and the test pieces were dried at 60°C for 12 hours. The mass of the test pieces after immersion was measured under room temperature (20°C). The mass change rate (%) was calculated from the measured masses before and after immersion.

[0153] The material (a) (substrate) and barrier materials used in the examples and comparative examples are shown below. (Material (a)) PPS: polyphenylene sulfide, MFR 125 g / 10 min, shape: 10 mm x 50 mm x 6 mm, 1% thermal decomposition temperature 473°C. PEI: polyetherimide, MFR 45 g / 10 min, shape: 10 mm x 50 mm x 2 mm, 1% thermal decomposition temperature 455°C. PEEK: polyether ether ketone, MFR 20 g / 10 min, shape: 10 mm x 50 mm x 2 mm, 1% thermal decomposition temperature 554°C. (Barrier Materials) Barrier material 1: Parylene C (aromatic content: 75%) manufactured by Japan Parylene LLC. Barrier material 2: Parylene N (aromatic content: 75%) manufactured by Japan Parylene LLC. Barrier material 3: Parylene D (aromatic content: 75%) manufactured by Japan Parylene LLC.

[0154] Examples 1, 2, 4, 5, 7, 8, 10, 11, 13, and 14 Barrier material 1 (Parylene C) was coated onto PPS by vacuum deposition according to the conditions in Table 1 to obtain test specimens (laminate members).

[0155] Examples 3, 6, 9, 12, and 15 Barrier material 2 (Parylene N) was coated onto PPS using vacuum deposition according to the conditions in Table 1 to obtain test specimens (laminate members).

[0156] Examples 22 to 25 Barrier materials 1 to 3 were coated onto PEI by vacuum deposition according to the conditions in Table 1 to obtain test pieces (laminate members).

[0157] Example 29 Barrier material 3 (Parylene D) was coated onto PEEK by vacuum deposition according to the conditions in Table 1 to obtain a test specimen (laminate member).

[0158] Examples 16 to 21, 26 to 28, and 30 to 32: Laminated members were obtained by coating each of the barrier materials 1 to 3 onto each of the substrates (PPS, PEEK, and PEI) using vacuum deposition under the conditions shown in Table 1. The laminated members were then annealed in an air atmosphere in a constant temperature incubator (DKN602, manufactured by Yamato Scientific Co., Ltd.) at the predetermined temperatures and times shown in Table 1, and then removed and cooled to room temperature to obtain test pieces (annealed laminated members).

[0159] To evaluate the crystallinity of each barrier material type, measurements were performed using an X-ray diffraction (XRD) device (device model: SmartLab, manufactured by Rigaku Corporation) under conditions of a tube voltage of 40 kV and a tube current of 40 mA, and the peak intensity at 14 to 17° originating from the barrier material type was confirmed. <Peak intensity (cps)> Barrier material 1 (Parylene C): 38,000 Barrier material 1-A (Parylene C 210°C, 2h annealed): 375,000 Barrier material 1-B (Parylene C 150°C, 1h annealed): 178,000 Barrier material 1-C (Parylene C 100°C, 1h annealed): 122,000 Barrier material 2 (Parylene N): 111,000 Barrier material 2-A (Parylene N 210°C, 2h annealed): 243,000 Barrier material 2-B (Parylene N 150°C, 1h annealed): 200,000 Barrier material 2-C (Parylene N 100°C, 1h annealed): 165,000 Barrier material 3 (Parylene D): 7,000 Barrier material 3-A (Parylene D Barrier material 3-B (Parylene D, annealed at 210°C for 2 hours): 44,000 Barrier material 3-B (Parylene D, annealed at 150°C for 1 hour): 20,000 Barrier material 3-C (Parylene D, annealed at 100°C for 1 hour): 15,000

[0160] Comparative Examples 1 to 5 PPS was used as the test specimen.

[0161] Comparative Examples 6 and 7 PEI was used as the test piece.

[0162] Comparative Example 8 PEEK was used as a test piece.

[0163]

[0164] The laminated members of the examples were suitable for use as members (components) in semiconductor manufacturing related equipment where chemicals are used.

Claims

1. A component in which at least a portion of the surface of material (a) is laminated with a barrier material having an aromatic ring, said component being at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials.

2. The member according to claim 1, wherein the aromatic content of the aromatic ring-containing barrier material (the proportion of carbon atoms in the molecule that constitute the aromatic ring) is 20% or more.

3. The member according to claim 1 or 2, wherein the aromatic ring-containing barrier material is at least one selected from the group consisting of a compound represented by the following formula (a), a compound represented by the following formula (b), and a compound represented by the following formula (c): (In the formula, X １ ~X ４ each independently represents hydrogen, halogen, a monovalent hydrocarbon group, or an optionally fluorinated alkoxy group. １ ~Y ４ each independently represents hydrogen or halogen, and n represents an integer of 1 or more.

4. A member according to any one of claims 1 to 3, wherein the aromatic ring-containing barrier material is at least one selected from the group consisting of polyparaxylene and polyparaxylene having a halogen introduced into the benzene ring.

5. The member according to any one of claims 1 to 3, wherein the aromatic ring-containing barrier material is at least one selected from the group consisting of a polymer represented by the following formula (1), a polymer represented by the following formula (2), and a polymer represented by the following formula (5):

6. The member according to any one of claims 1 to 3, wherein the aromatic ring-containing barrier material is at least one selected from the group consisting of a polymer represented by the following formula (2) and a polymer represented by the following formula (5):

7. The member according to any one of claims 1 to 6, wherein the material (a) is at least one selected from the group consisting of resin, rubber, metal and ceramic.

8. The member according to any one of claims 1 to 7, wherein the material (a) is at least one selected from the group consisting of resin and rubber.

9. The member according to any one of claims 1 to 8, wherein the material (a) is at least one selected from the group consisting of polyphenylene sulfide, polyetherimide resin, and polyetheretherketone resin.

10. A member according to any one of claims 1 to 9, wherein the temperature at which material (a) loses 1% by mass due to thermal decomposition is 560°C or less.

11. The member according to any one of claims 1 to 10, wherein the coating containing the aromatic ring-containing barrier material has a thickness of 0.01 to 100 μm.

12. The member according to any one of claims 1 to 11, wherein the coating containing the aromatic ring-containing barrier material has a thickness of 1 to 50 μm.

13. The member according to any one of claims 1 to 12, wherein the member is at least one selected from the group consisting of piping, nozzles, tubes, tanks, containers, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials.

14. The member according to any one of claims 1 to 13, which is a member for semiconductor manufacturing related equipment.

15. The member according to claim 14, wherein the semiconductor manufacturing related equipment is an equipment in which chemicals are used.

16. The chemical is TMAH([(CH ３ ) ４ N] ＋ [OH] － ), sulfuric acid, isopropyl alcohol, hydrofluoric acid, mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (NH ４ OH, H ２ O ２ and H ２ O mixture), SC2 (HCl, H ２ O ２ and H ２ 16. The component of claim 15, wherein the acid is at least one selected from the group consisting of a mixture of ammonium hydroxide, ...

17. The member according to claim 15, wherein the chemical is at least one selected from the group consisting of silicon-based gas, arsenic-based gas, phosphorus-based gas, boron-based gas, metal hydride gas, metal alkyl gas, halogenated hydrocarbon gas, halogen-halide gas, nitrogen oxide gas, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

18. The semiconductor manufacturing related equipment member according to any one of claims 14 to 17, wherein at least a portion of the surface that comes into contact with the chemical is laminated with a barrier material having the aromatic ring.

19. The component for semiconductor manufacturing related equipment according to any one of claims 14 to 18, wherein the component is a component for semiconductor manufacturing related equipment in which chemicals are used, and at least a portion of the surface that comes into contact with the chemicals is laminated with the barrier material.

20. A member according to any one of claims 1 to 19, wherein the mass change rate in the following chemical resistance evaluation is 70.0 mass% or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is completely immersed in a mixed acid in which the concentration ratio (molar ratio) of hydrofluoric acid to nitric acid is 1:5 (hydrofluoric acid concentration: 50%; nitric acid concentration: 60%) or a mixed acid in which the concentration ratio (molar ratio) of hydrofluoric acid to nitric acid is 1:100 (hydrofluoric acid concentration: 50%; nitric acid concentration: 60%), and is kept at room temperature (20°C) for 1 day (24 hours) or 1 week (168 hours). After the immersion, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60° C. for 12 hours. The mass of the test piece after immersion is measured under room temperature (20° C.) conditions. The mass change rate (%) is calculated from the measured masses before and after immersion.

21. A member according to any one of claims 1 to 20, in which the mass change rate in the following chemical resistance evaluation is 70.0 mass% or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in SPM (a 2:1 volume ratio of concentrated sulfuric acid to hydrogen peroxide solution) and held at room temperature (20°C) for 1 day (24 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

22. A member according to any one of claims 1 to 21, in which the mass change rate in the following chemical resistance evaluation is 70.0 mass% or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C). After measurement, the test piece is completely immersed in concentrated sulfuric acid (98%) and held at 90°C for 1 week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours, and the mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

23. A member according to any one of claims 1 to 22, wherein the mass change rate in the following chemical resistance evaluation is 70.0 mass % or less. (Chemical Resistance Evaluation) A test piece of the member (a test piece in which a coating containing a barrier material having an aromatic ring is laminated over the entire surface of material (a), material (a) size: 10 mm x 50 mm x 6 mm, coating thickness: 15 μm) is dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion is measured under room temperature (20°C) conditions. After the measurement, the test piece is immersed in TMAH([(CH ３ ) ４ N] ＋ [OH] － The test piece is then completely immersed in a 25% concentration solution at 80°C and held for one week (168 hours). After holding, the test piece is washed with pure water, water droplets on the surface are wiped off, and the test piece is dried at 60°C for 12 hours. The mass of the test piece after immersion is measured under room temperature (20°C). The mass change rate (%) is calculated from the measured masses before and after immersion.

24. A method for manufacturing a member according to any one of claims 1 to 23, wherein the member is manufactured under conditions of a temperature not exceeding the temperature at which the material (a) loses 1% by mass due to thermal decomposition.

25. A method for producing a member according to claim 24, comprising the step of coating the surface of said material (a) with said aromatic ring-containing barrier material by CVD, sputtering, ion deposition, or vacuum deposition.

26. A semiconductor manufacturing related device equipped with a member according to any one of claims 1 to 23.

27. The semiconductor manufacturing related equipment according to claim 26, which is at least one selected from the group consisting of semiconductor manufacturing equipment and equipment related to semiconductor manufacturing equipment.

28. The semiconductor manufacturing related equipment according to claim 27, wherein the semiconductor manufacturing equipment is at least one selected from the group consisting of thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, wafer processing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, heat treatment equipment, CVD equipment, sputtering equipment, thin film formation equipment, inspection / evaluation equipment, processing equipment, dicing equipment, bonding equipment, packaging equipment, testing equipment, probing equipment, handler, aging equipment, and inspection equipment, and the semiconductor manufacturing equipment related equipment is at least one selected from the group consisting of transport equipment, pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing related equipment.

29. The thin film formation / etching / cleaning / drying equipment is at least one selected from the group consisting of a vacuum deposition equipment, a sputtering equipment, a cleaning equipment, a drying equipment, and a scrub cleaning equipment; the inspection / evaluation equipment / manufacturing equipment is a defect repair equipment; the wafer processing equipment is a wafer marking equipment; the resist processing equipment is at least one selected from the group consisting of a coating equipment, a developing equipment, a resist stripping equipment, an ashing equipment, and a baking equipment; the etching equipment is at least one selected from the group consisting of a dry etching equipment and a wet etching equipment; the cleaning / drying equipment is at least one selected from the group consisting of a dry cleaning equipment, a wet cleaning equipment, a scrub cleaning equipment, and a drying equipment; the heat treatment equipment is at least one selected from the group consisting of an oxidation equipment, a diffusion equipment, and an annealing equipment; the CVD equipment is at least one selected from the group consisting of a high-pressure CVD equipment, a SACVD equipment, a low-pressure CVD equipment, a metal CVD equipment, and an ALD equipment; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the inspection and evaluation apparatus is an Auger electron spectroscopy apparatus; the processing apparatus is at least one selected from the group consisting of a wafer marking apparatus, a back grinding machine, a bump plating apparatus, a back grinder tape applicator, a back grinder, and a back grinder tape peeler; the dicing apparatus is at least one selected from the group consisting of a dicing apparatus and a wafer mounting apparatus; the bonding apparatus is at least one selected from the group consisting of a die bonding apparatus, a hybrid bonding apparatus, a wire bonding apparatus, an inner lead bonding apparatus, an outer lead bonding apparatus, and a flip chip bonding apparatus; the packaging apparatus is at least one selected from the group consisting of a molding apparatus, a deburring apparatus, and a solder processing apparatus; the testing apparatus is at least one selected from the group consisting of an electron beam testing apparatus and a laser beam testing apparatus; the prober is a prober;the aging equipment is at least one selected from the group consisting of an aging equipment, a burn-in equipment, an IC insertion equipment, and an IC extraction equipment, the inspection equipment is at least one selected from the group consisting of a thermal testing equipment, a temperature and humidity testing equipment, a pressure cooker equipment, a laser processing system, and a life testing equipment, the transport equipment is a stocker, the pure water / chemical liquid equipment is at least one selected from the group consisting of a pure water production equipment, an ultrafiltration equipment, a reverse osmosis equipment, a sterilization equipment, a chemical supply equipment, a slurry supply equipment, a chemical purification equipment, and a waste liquid treatment equipment, the gas equipment is at least one selected from the group consisting of a gas generation equipment, a gas purification equipment, a gas mixing equipment, a gas detection equipment, and an exhaust gas treatment equipment, the clean room equipment is at least one selected from the group consisting of a clean bench, a clean tunnel, an environmental testing equipment, an air shower, and a pass box, 29. The semiconductor manufacturing related equipment according to claim 28, wherein the manufacturing related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a taping device, a packaging device, and a liquid / gas measuring device.

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