Electroplating apparatus

Abstract

The present application discloses an electroplating apparatus, comprising an anode chamber, wherein an anode baffle wall is provided at an edge region of the anode chamber and configured for dividing the anode chamber into a first anode region and a second anode region, the second anode region is a local region in a circumferential direction of the edge region of the anode chamber, a first anode is accommodated in the first anode region, a second anode is accommodated in the second anode region, and the second anode is configured such that during an electroplating process of a substrate, the total electric charge received by an edge region of the substrate within the second anode region is consistent. The present application improves film thickness uniformity in substrate edge regions.

Description

Electroplating device TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an electroplating device. BACKGROUND

[0002] Generally, the electroplating device includes an anode cavity and a cathode cavity, the anode cavity is located below the cathode cavity, the cathode cavity contains a cathode liquid, the anode cavity contains an anode and an anode liquid, the anode is immersed in the anode liquid and is electrically connected to the positive pole of an electroplating power supply through a titanium plate, a substrate holding device clamps a substrate so that the substrate is immersed in the cathode liquid and is electrically connected to the negative pole of the electroplating power supply, and the substrate serves as a cathode. During electroplating, the electroplating power supply outputs an electric current, an electric field is generated between the anode and the cathode, and metal ions in the electroplating liquid are deposited on the surface of the substrate through the action of the electric field.

[0003] FIG. 1 is a schematic diagram of the electric field distribution between the anode and the substrate in an embodiment; referring to FIG. 1, the anode includes a first anode 123' and a second anode 133', the first anode 123' is circular and located in the center of the anode cavity, and the second anode 133' is annularly arranged around the outer periphery of the first anode 123'. The first anode 123' and the second anode 133' are separated by an anode barrier wall 110', which is annular in shape, and the centers of the anode barrier wall 110', the first anode 123', and the third anode 133' coincide. However, because of the presence of the anode barrier wall 110', the electric field lines 150' from the first anode 123', the second anode 133', to the substrate 500' (which serves as a cathode) are generally as shown in FIG. 1. In the positions on the substrate 500' corresponding to the anode barrier wall 110' (positions A and B in FIG. 1), the electric field lines 150' are relatively dense and the electric field strength is relatively high, which results in non-uniform current density on the surface of the substrate 500', thereby causing the electroplating thickness of the edge region of the substrate 500' to protrude and form a circular ring-shaped special pattern distribution. SUMMARY

[0004] The present application aims to solve the problem of non-uniform film thickness in the edge region of the substrate in the prior art.

[0005] To solve the above problem, an embodiment of the present application provides an electroplating device, which comprises:

[0006] an anode cavity, which includes a central region and an edge region, and is provided with an anode barrier wall in the edge region, for separating the anode cavity into a first anode region and a second anode region, the second anode region being a partial region of the periphery of the edge region, the first anode region containing a first anode, and the second anode region containing a second anode, wherein the second anode is configured to ensure that the total electric quantity received by the edge region of the substrate in the second anode region is consistent during the electroplating of the substrate.

[0007] The electroplating device provided by the present application sets the anode baffle wall as a non-ring shape, i.e. the projection of the anode baffle wall on the substrate is not a ring shape with the center of the substrate as a circle. When the substrate rotates, the electric field between the first anode and the second anode in the shielding area of the anode baffle wall at the edge of the substrate is not always shielded by the anode baffle wall, which reduces the influence of the anode baffle wall on the electric field, and improves the film thickness uniformity of the edge area of the substrate by making the total electric quantity received by the edge area of the substrate in the second anode area consistent.

[0008] Another embodiment of the present application provides an electroplating device, comprising:

[0009] A film frame comprising a side wall extending upward to form a cathode cavity;

[0010] A branch pipe for providing cathode liquid to the cathode cavity;

[0011] A support plate arranged at the bottom of the film frame and provided with a through hole; and the branch pipe is arranged in a spaced manner with the support plate.

[0012] The electroplating device provided by the present application arranges the branch pipe in a spaced manner with the support plate, which can facilitate the circulation of the cathode liquid in the gap between the branch pipe and the support plate, and increase the flowability of the flow field in the cathode cavity.

[0013] Other features and corresponding beneficial effects of the present application are described in the latter part of the specification, and it should be understood that at least part of the beneficial effects are apparent from the description in the specification.

[0014] SUMMARY

[0015] FIG. 1 is a schematic diagram of the electric field distribution between the anode and the substrate according to an embodiment;

[0016] FIG. 2 is a schematic diagram of the cross-sectional structure of the electroplating device according to Embodiment 1 of the present application;

[0017] FIG. 3 is a schematic diagram of the top view structure of the cathode cavity according to Embodiment 1 of the present application;

[0018] FIGS. 4a to 4e are schematic diagrams of the orthographic projection of the anode baffle wall with various shapes on the plane where the substrate is located according to Embodiment 1 of the present application;

[0019] FIG. 5 is a schematic diagram of the top view structure of the film frame according to Embodiment 1 of the present application;

[0020] FIG. 6 is a schematic diagram of the cross-sectional structure of the film frame according to Embodiment 2 of the present application; and

[0021] FIG. 7 is a schematic diagram of the top view structure of the cathode cavity according to Embodiment 3 of the present application.

[0022] Preferred embodiments of the present application

[0023] The specific embodiments of the present application will now be described in detail with specific reference being made to the figures. The following detailed description is disclosed with reference to the attached drawings. In the description of the embodiments, common features are similarly referred to. The description of the embodiments is intended to apply to each illustrated example where appropriate. Like numbers in different figures refer to like features.

[0024] It should be noted that in this specification, similar reference numbers and characters in the drawings represent similar items, and therefore, once an item is defined in one drawing, it need not be further defined and explained in subsequent drawings.

[0025] The technical solutions of the present application will be described clearly and completely below in conjunction with the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0026] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0027] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through an intermediate medium; it can be the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0028] For the purpose of making the objects, technical solutions and advantages of the present application clearer, the embodiments of the present application will be further described in detail below with reference to the drawings.

[0029] Fig. 2 is a schematic diagram of a cross-sectional structure of the electroplating device provided in Embodiment 1 of the present application; and Fig. 3 is a schematic diagram of a top view structure of the anode cavity provided in Embodiment 1 of the present application.

[0030] Referring to Fig. 2, the electroplating device provided in the present application comprises an anode cavity 100, a membrane frame 200 and an ion membrane 300. The anode cavity 100 contains an anode and an anode liquid. The anode is used to form an electric field on the surface of a substrate 500. The membrane frame 200 is located above the anode cavity 100 and comprises a side wall 210. The side wall 210 of the membrane frame 200 extends upward to form a cathode cavity 211. The cathode cavity 211 contains a cathode liquid. The cathode cavity 211 and the anode cavity 100 are separated by the ion membrane 300. During electroplating, the substrate 500 is immersed in the cathode liquid. Metal ions in the anode liquid are deposited onto the surface of the substrate 500 under the action of the electric field through the ion membrane 300.

[0031] Specifically, referring to Figs. 2 and 3, the anode cavity 100 is provided with an anode barrier 110 at the edge region. The anode barrier 110 is used to divide the anode cavity 100 into a first anode region 101 and a second anode region 102. The second anode region 102 is a partial region of the periphery of the edge region of the anode cavity 100. That is, the anode barrier 110 is not annular. The anode barrier 110 is not annular means that the projection of the anode barrier 110 on the substrate 500 is not annular with the center of the substrate 500 as the circle. The anode mentioned above comprises a first anode 123 and a second anode 133. The first anode 123 is contained in the first anode region 101, and the second anode 133 is contained in the second anode region 102. During the electroplating process of the substrate 500, the total amount of electricity received by the edge region of the substrate 500 in the second anode region 102 is consistent. The first anode 123 and the second anode 133 can both be metal blocks or metal particles, for example, copper blocks or copper particles.

[0032] In the present embodiment, the total amount of electricity received by the edge region of the substrate 500 in the second anode region 102 can be made consistent in the following way: during the electroplating process of the substrate 500, the second anode 133 forms an electric field on the surface of the edge region of the substrate 500. The magnitude of the electric field strength of the electric field is constant. Generally, the substrate 500 is kept rotating at a constant speed.

[0033] In other embodiments, during the electroplating process of the substrate 500, the rotation speed of the substrate 500 can be changed. During this period, the magnitude of the electric field strength of the electric field formed by the second anode 133 on the surface of the edge region of the substrate 500 is constant.

[0034] The anode baffle 110 is not annular, and the second anode area 102 separated by the anode baffle 110 is a partial area of the circumference of the edge area of the anode cavity 100. When the substrate 500 rotates, the electric field between any point in the shielding area of the substrate 500 corresponding to the anode baffle 110 and the first anode 123 and the second anode 133 is not always shielded by the anode baffle 110, the influence of the anode baffle 110 on the electric field is reduced, and the uniformity of the film thickness of the edge area of the substrate 500 is improved. In addition, in the electroplating process of the substrate 500, the substrate 500 rotates, and the total amount of electricity received by the edge area of the substrate 500 in the second anode area 102 is consistent, which helps to improve the film thickness uniformity of the edge area of the substrate 500.

[0035] In addition, due to the existence of the "edge effect", the current density of the edge of the substrate is higher, and the non-uniformity of the current density makes the electroplating rate of the edge of the substrate higher and the electroplating rate of the center of the substrate lower. Therefore, in some embodiments, referring to FIG. 2, the first anode 123 and the second anode 133 form electric fields on the surface of the substrate 500, respectively, and the electric field intensity of each electric field is independently controlled. By independently controlling the electric field intensity of the electric field formed by the second anode 133 on the surface of the edge area of the substrate 500, and keeping the electric field intensity unchanged during the electroplating process of the substrate 500, the purpose of improving the "edge effect" is achieved.

[0036] Continuing to refer to FIG. 2, the current supplied to the first anode 123 and the second anode 133 is independently controlled, thereby independently controlling the electric field strength of the respective electric fields, which is conducive to adjusting the film thickness of the edge region of the substrate 500 according to actual process requirements and improving the film thickness uniformity of the edge region of the substrate 500. Specifically, as shown in FIG. 2, the first anode region 101 further contains a first titanium plate 122 and a first electrode 121, which are arranged below the first anode 123. The first electrode 121 is connected to the positive pole of a first power supply (not shown), and the first power supply supplies a first current to the first anode 123 through the first electrode 121 and the first titanium plate 122 in sequence. The second anode region 102 further contains a second titanium plate 132 and a second electrode 131, which are arranged below the second anode 133. The second electrode 131 is connected to the positive pole of a second power supply (not shown), and the second power supply supplies a second current to the second anode 133 through the second electrode 131 and the second titanium plate 132 in sequence. The negative poles of the first power supply and the second power supply are both electrically connected to the substrate 500. Generally, due to the existence of the "edge effect", the film layer of the edge region of the substrate 500 is thicker than that of the central region of the substrate 500. Therefore, in order to reduce the plating rate of the edge of the substrate 500, the second current is smaller than the first current in the embodiment. After the size of the second current is adjusted and determined, the film layer on the surface of the substrate 500 is formed. During this process, the second current remains constant, and at the same time, the first current also remains constant. Thus, the electric field strength of the electric field formed by the first anode 123 and the second anode 133 respectively remains unchanged in the same process stage. It should be noted that in other embodiments, the current size can also be adjusted according to specific processes, for example, the second current is set to be greater than the first current.

[0037] FIGS. 4a-4e are schematic diagrams of the normal projection of the anode block wall 110 and the second anode region 102 on the plane of the substrate 500 according to the embodiment 1 of the present application, which has various shapes of the anode block wall 110.

[0038] In some embodiments, in combination with reference to FIGS. 4a-4e, the anode block wall 110 forms a projection on the plane of the substrate 500, which includes an inner boundary 1101 and an outer boundary 1102 in the radial direction of the substrate 500 and two circumferential boundaries 1103, 1104 in the circumferential direction of the substrate 500, and the two circumferential boundaries 1103, 1104 connect the inner boundary 1101 and the outer boundary 1102. The anode block wall 110 defines the second anode region 102. The distance L between the two circumferential boundaries 1103, 1104 in the circumferential direction gradually increases from the inside to the outside, which is equivalent to that the width of the second anode 133 in the circumferential direction gradually increases from the inside to the outside, so that the second anode 133 significantly adjusts the film thickness of the edge region of the substrate 500, thereby effectively adjusting the film thickness uniformity of the edge region of the substrate 500 as the substrate 500 rotates. It should be noted that the circumferential direction described in the embodiment is the circumferential direction of the substrate 500.

[0039] In some embodiments, as shown in FIG. 4a, the number of intersection points between the two circumferential boundaries 1103, 1104 and any circle (e.g. circle 501b, 501c) with the center O of the substrate 500 as the center and intersecting with the circumferential boundaries 1103, 1104 is equal, which means that the degree of shielding of the electric field by the anode barrier 110 at different positions of the substrate 500 in the radial direction of the substrate 500 is similar, which is beneficial to making the film thickness of the edge region of the substrate 500 uniform.

[0040] In some embodiments, as shown in FIG. 4a, the inner boundary 1101 is a point; as shown in FIG. 4b, the inner boundary 1101 is a straight line; as shown in FIG. 4c to FIG. 4e, the inner boundary 1101 is an arc. Preferably, the inner boundary 1101 is a point, which shields the electric field the least. In the example shown in FIG. 4a, it can be seen that the cross section of the anode barrier 110 is a sector, and correspondingly, the cross section of the second anode area 102 is a sector. According to the foregoing, for the anode barrier 110 in the form of a sector, the distance L in the circumferential direction between the two circumferential boundaries 1103, 1104 gradually increases from inside to outside, the number of intersection points between the two circumferential boundaries 1103, 1104 and any circle (e.g. circle 501b, 501c) intersecting with them is two, and the inner boundary 1101 is a point. The number of intersection points between the inner boundary 1101 and the circle 501a intersecting with the inner boundary 1101 is one, which not only makes the degree of shielding of the electric field by the anode barrier 110 at different positions of the substrate 500 in the radial direction of the substrate 500 similar, but also makes the shielding of the electric field by the anode barrier 110 the least. Therefore, the anode barrier 110 in the form of a sector has less influence on the electric field and the uniformity of the current density on the surface of the substrate 500, and can maximize the improvement of the film thickness uniformity of the edge region of the substrate 500. It should be noted that the outer boundary 1102 in the examples shown in FIG. 4a to FIG. 4e intersects with the circle formed at the outermost edge of the substrate 500, and in other examples, the radius of the substrate 500 is smaller than the distance between the outer boundary 1102 and the center O of the substrate 500. Generally, the outermost edge of the substrate 500 can be considered as a non-electroplating area, so the shielding of the electric field by the anode barrier 110 structure corresponding to the outer boundary 1102 can be considered as not affecting the electroplating process requirements of the substrate 500.

[0041] In some embodiments, as shown in FIG. 3, taking the cross section of the anode barrier 110 in the form of a sector as an example, the anode barrier 110 defines the second anode area 102, and the structure of the anode barrier 110 is composed of two straight line segments 111a, 111b and an arc segment 112, wherein the arc segment 112 of the anode barrier 110 is embedded in the side wall of the anode cavity 100, and the arc segment 112 is the structure corresponding to the outer boundary 1102 in the foregoing. In other embodiments, the arc segment 112 of the anode barrier 110 can be formed by part of the side wall of the anode cavity 100, i.e. part of the side wall of the anode cavity 100 and the anode barrier 110 jointly define the second anode area 102.

[0042] In some embodiments, as shown in FIG. 3, the first anode region 101 has one, and the second anode region 102 has at least one. In one of the second anode regions 102, the anode barrier 110 is provided with one or more. In the present embodiment, the first anode region 101 and the second anode region 102 each has one, and accordingly, the anode barrier 110 has one, so that the anode barrier 110 as a whole has the least shielding effect on the electric field.

[0043] FIG. 5 is a top view of the film frame according to the first embodiment of the present application.

[0044] Referring to FIGS. 2 and 5, the film frame 200 further comprises a cathode barrier 220, a middle passage 230, a middle barrier defining the middle passage 230, and a plurality of branch pipes 240. The plurality of branch pipes 240 are used to supply cathode liquid to the cathode cavity 211, and each of the branch pipes 240 is provided with an opening 241 for discharging the cathode liquid. The cathode barrier 220 separates the cathode cavity 211 into independent first and second cathode regions, the first cathode region corresponds to the first anode region 101 in the up-down direction, the second cathode region corresponds to the second anode region 102 in the up-down direction, and the cathode barrier 220 corresponds to the anode barrier 110 in the up-down direction. The film frame 200 and the anode barrier 110 are sealed by a sealing ring 400, which is used to prevent the first anode region 101 and the second anode region 102 from communicating with each other, and the sealing ring 400 has the same shape as the cathode barrier 220 and the anode barrier 110. As shown in FIG. 5, the two straight sections 221a and 221b of the cathode barrier 220 each has a first end connected to the sidewall 210 of the film frame 200 and a second end intersecting with one of the branch pipes 240. The first ends of the branch pipes 240 are arranged along the circumference of the sidewall 210 of the film frame 200, and the second ends of the branch pipes 240 are arranged along the circumference of the middle passage 230 and jointly define a middle barrier discontinuous in the circumferential direction. The discontinuous middle barrier has the least shielding effect on the electric field, which is beneficial to the formation of a film with uniform thickness in the central region of the substrate 500.

[0045] In some embodiments, referring to FIG. 2, the membrane holder 200 further comprises a support plate (not shown in the figure) arranged at the bottom of the membrane holder 200 for stably supporting the ion membrane 300. The support plate is provided with through holes, such as a plurality of uniformly distributed honeycomb holes, for facilitating the passage of metal ions in the anolyte. In the example shown in FIG. 2, the bottom of the branch pipe 240 is flush with the support plate. The ion membrane 300 is arranged below the support plate, and in this case, the membrane holder 200 is indirectly sealed with the anode barrier wall 110 by the sealing ring 400, specifically, the ion membrane 300 and the anode barrier wall 110 are sealed by the sealing ring 400. In other embodiments, according to specific process requirements, the ion membrane 300 can also be arranged above the support plate, or arranged above and below the support plate at the same time. The structure of the support plate in this embodiment can refer to the structure of the support plate 260 in FIG. 6 below.

[0046] In some embodiments, the support plate is integrally formed with the membrane holder 200, which is convenient for installation and has high strength.

[0047] Embodiment 2

[0048] Referring to FIG. 6, FIG. 6 shows a cross-sectional structure schematic diagram of the membrane holder provided in Embodiment 2.

[0049] The electroplating device provided in this embodiment 2 comprises a membrane holder 200, a branch pipe 240, a support plate 260 and an ion membrane 300. The membrane holder 200 comprises a side wall 210 extending upward to form a cathode cavity 211. The branch pipe 240 is used to provide catholyte to the cathode cavity 211. The support plate 260 is arranged at the bottom of the membrane holder 200 and is provided with through holes 261. The ion membrane 300 is arranged at the bottom of the cathode cavity, specifically at the bottom of the support plate 260. The branch pipe 240 and the support plate 260 are arranged in a spaced manner, and the bottom of the branch pipe 240 and the top of the support plate 260 have a gap h, so as to facilitate the flow of the catholyte below the plurality of branch pipes 240 through the gap h.

[0050] In some embodiments, the branch pipe 240 is provided with a spray hole 241 for discharging catholyte towards the ion exchange membrane to flush the ion exchange membrane 300, so that the flowability of the flow field under the cathode cavity 211 is increased. Since the branch pipe 240 and the support plate 260 have a gap h, the catholyte can flow through the gap h, so that the effect of reducing the crystallization deposition on the ion exchange membrane 300 can be achieved. In the present embodiment, the spray hole 241 is arranged on the side wall of the branch pipe 240, and the discharge direction of the spray hole 241 has a predetermined angle, for example, an acute angle, with the vertical direction. The spray hole 241 discharges the catholyte obliquely downwards to flush the ion exchange membrane 300. The spray hole 241 can also be arranged on the bottom of the branch pipe 240, and the discharge direction of the spray hole 241 has no angle with the vertical direction. The spray hole 241 discharges the catholyte vertically downwards into the gap h and flushes the ion exchange membrane 300 to increase the flowability of the flow field.

[0051] Embodiment 3

[0052] Referring to FIG. 7, FIG. 7 shows a top view of the anode cavity according to Embodiment 3. For convenience, a plurality of dashed circles are shown in FIG. 7, which do not represent that the anode cavity 100 is actually divided into a plurality of annular regions, but are only used as auxiliary references. The annular regions divided by the plurality of dashed circles in FIG. 7 correspond to a plurality of annular regions where the film thickness uniformity can be improved at the edge of the substrate.

[0053] Compared with Embodiment 1, the difference between Embodiment 3 and Embodiment 1 is that the second anode region 102 in Embodiment 3 has a plurality of second anode regions, which are suitable for processes with multiple anode requirements. Correspondingly, the anode barrier wall 110 has a plurality of anode barrier walls for forming a plurality of second anode regions 102. Each second anode region 102 is separated from the first anode region 101 by a corresponding anode barrier wall 110. The plurality of second anode regions 102 are arranged in sequence in the radial direction of the anode cavity. The projections of the plurality of second anode regions 102 arranged in this way on the plane of the substrate do not overlap. In the present embodiment, the currents supplied to the second anodes in the plurality of second anode regions 102 are independently controlled to control the electric field intensity of the electric field formed by the plurality of second anodes on the surface of the substrate edge region, thereby achieving the purpose of improving the film thickness uniformity of the substrate edge region.

[0054] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or make equivalent replacements for some or all of the technical features. Such modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An electroplating apparatus characterized by comprising: The application relates to an electroplating device. The anode cavity is provided with an anode baffle in the edge region, which separates the anode cavity into a first anode region and a second anode region, the second anode region is a local region of the circumference of the edge region of the anode cavity, the first anode region contains a first anode, and the second anode region contains a second anode, wherein The second anode is configured to: in the electroplating process of the substrate, the total electric quantity received by the edge region of the substrate in the second anode region is consistent.

2. The electroplating apparatus of claim 1, wherein The anode baffle forms a projection on the plane where the substrate is located, the projection comprises an inner boundary and an outer boundary in the radial direction of the substrate and two circumferential boundaries in the circumferential direction of the substrate, and the distance between the two circumferential boundaries gradually increases from inside to outside in the circumferential direction.

3. The electroplating apparatus of claim 2, wherein The number of intersection points of the two circumferential boundaries and any circle with the center of the substrate as the center and intersecting the two circumferential boundaries is equal.

4. The electroplating apparatus of claim 2, wherein The inner boundary is a point, a straight line or an arc.

5. The electroplating apparatus of claim 1, wherein The first anode and the second anode respectively form an electric field on the surface of the substrate, and the electric field intensity of each electric field is independently controlled.

6. The electroplating apparatus of claim 1, wherein The anode baffle has a plurality of anode baffles, which are used to form a plurality of second anode regions, each second anode region is separated from the first anode region by a corresponding anode baffle, and the plurality of second anode regions are arranged in sequence in the radial direction of the anode cavity.

7. The electroplating apparatus of claim 1, wherein Further comprising: A membrane frame and an ion membrane, the membrane frame is arranged above the anode cavity, the membrane frame comprises a side wall and a cathode baffle, the side wall extends upward to form a cathode cavity, the ion membrane is used to separate the cathode cavity and the anode cavity, and the cathode baffle is used to separate the cathode cavity into independent first and second cathode regions, the first cathode region corresponds to the second anode region, and the second cathode region corresponds to the second anode region.

8. The electroplating apparatus of claim 7, wherein Further comprising: A sealing ring arranged between the membrane frame and the anode baffle, which is used to isolate the flow field of the first anode region and the flow field of the second anode region.

9. The electroplating apparatus of claim 7, wherein The membrane frame further comprises a support plate, the support plate is arranged at the bottom of the membrane frame and is provided with a through hole.

10. The electroplating apparatus of claim 7, wherein The membrane frame further comprises an intermediate channel, an intermediate baffle for limiting the intermediate channel and a plurality of branch pipes for providing cathode liquid to the cathode cavity, the first end of each branch pipe is arranged in the circumferential direction of the side wall of the membrane frame, the second end of each branch pipe is arranged in the circumferential direction of the intermediate channel, and the second ends of the branch pipes jointly define the intermediate baffle which is discontinuous in the circumferential direction.

11. The electroplating apparatus of claim 7, wherein The membrane frame further comprises: A branch pipe for providing cathode liquid to the cathode cavity; A support plate arranged at the bottom of the membrane frame and provided with a through hole; wherein the branch pipe and the support plate are arranged in a spaced manner.

12. An electroplating apparatus characterized by comprising: Further comprising: A membrane frame comprising a side wall, the side wall extends upward to form a cathode cavity; A branch pipe for providing cathode liquid to the cathode cavity; A support plate arranged at the bottom of the membrane frame and provided with a through hole; wherein the branch pipe and the support plate are arranged in a spaced manner.

13. The electroplating apparatus of claim 12, wherein, Further comprising: An ion membrane arranged at the bottom of the cathode cavity; The branch pipe is provided with a jet hole, and the jet hole is used to discharge cathode liquid towards the ion membrane.

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