2results about How to "Increase spatial distribution" patented technology

The application relates to the technical field of aerosol generating equipment, in particular to a heating body and a heat-not-burn device. The heating body comprises a heating core body configured to be excited to generate heat, and a heat conduction member with a mounting cavity, wherein the heating core body is arranged in the mounting cavity to transfer heat to the heat conduction member; an air guide channel is arranged on the outer surface of the heat conduction member to reduce the contact area between the heat conduction member and an aerosol generating article and to heat the heat conduction member to generate a hot air flow, so that the aerosol generating article is heated by the convection of the hot air flow and the radiation of the channel wall of the air guide channel. Since the air guide channel is arranged on the heat conduction member, the contact area between the heat conduction member and the aerosol generating article is reduced, the risk of local overheating is reduced, and the possibility of affecting the flavor of the aerosol due to heating of the heating body is reduced. The air guide channel can also improve heating uniformity through convection heating and radiation heating, further ensuring the flavor of the aerosol.

The invention belongs to the technical field of power semiconductors, and particularly relates to a monolithic integrated CMOS circuit based on a GaN base. According to the circuit, a traditional AlGaN barrier layer with a fixed Al component is replaced with a linear gradually-changing AlGaN barrier layer with the Al component linearly changing gradually, specifically, the linear gradually-changing AlGaN barrier layer with the Al component linearly changing gradually from bottom to top, 3DHG induced by polarization difference of the linear gradually-changing AlGaN barrier layer and 2DHG formed by a GaN channel and a heterojunction interface of the linear gradually-changing AlGaN barrier layer are added, the overall concentration of hole gas is increased, and the hole gas efficiency is improved. And thus, the conduction current density of the p-FETs is improved. According to the structure, the conduction current density of the p-FETs can be improved, the P / N channel compatibility can be improved, the conduction mismatch degree of the p- / n-FETs in monolithic integration can be reduced, and the development of a full GaN monolithic power integrated circuit (IC) based on a complementary metal oxide semiconductor (CMOS) can be promoted.