Method and device for erasure balance of Nand Flash

A technology of equalizing and erasing times, which is applied in the field of memory, can solve the problem that erasing times affects the life of NandFlash, and achieve the effect of improving life and writing speed

Active Publication Date: 2013-06-12
ZTE CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved in the present invention is to provide a method and device for erasing equalization of Nand Flash, in order to solve the problem in the prior art that the life of Nand Flash is affected by too many erasing times of some physical blocks

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  • Method and device for erasure balance of Nand Flash
  • Method and device for erasure balance of Nand Flash
  • Method and device for erasure balance of Nand Flash

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Embodiment Construction

[0051] In order to solve the problem in the prior art that the lifespan of Nand Flash is affected by too many erasing times of some physical blocks, the present invention provides a method and device for erasing equalization of Nand Flash. Below in conjunction with the accompanying drawings and embodiments, the present invention is further detailed illustrate. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0052] The erasing and writing of Nand Flash requires that the erasing times of each physical block be balanced. Therefore, the erasing times of physical blocks is a very important reference for improving the life of Nand Flash. At the same time, due to the nature of the file system, the frequency of use of logical blocks is different. If only the number of erasures of physical blocks is considered, and the frequency of use of logical blocks is not considered, a good b...

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Abstract

A method and an apparatus for Nand Flash erase leveling are disclosed. The method includes the following steps: setting at least a first erase times threshold and a second erase times threshold which is less than or equal to the first erase times threshold; setting at least a first use frequency threshold and a second use frequency threshold which is more than or equal to the first use frequency threshold; assigning the physical blocks of the Nand Flash into different physical block regions according to the first erase times threshold, the second erase times threshold, the first use frequency threshold and the second use frequency threshold; and mapping logical blocks to the physical blocks in the corresponding physical block regions respectively according to the use frequency and the original mapping relationship of the logical blocks of the Nand Flash. The solution solves the problem that the storage space of the Nand Flash is reduced as the erase times of partial physical blocks exceed the set (rated) erase times of the Nand Flash physical blocks, thus increases the life of the Nand Flash.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a method and device for erasing and equalizing a Nand Flash. Background technique [0002] Nand Flash has the characteristics of low cost, large capacity and good stability, and is widely used in the embedded field. [0003] The physical structure of Nand Flash is composed of page structure and block structure. The size of a page is 512Bytes, and each page has an additional area of ​​16Bytes Spare Area. This area is not a data area and can be used to store some information related to the page, such as Check code, etc.; a block consists of 32 adjacent pages (or 64 pages), which is 16KB (or 32KB). A page is the basic unit of a read operation, and a block is the basic unit of an erase operation. Before writing to an area, if the area has been written to before, the entire block containing the area needs to be erased first (erase first, then write). Nand Flash needs to erase the bl...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G06F12/06
CPCG06F12/0246G06F2212/7211G11C16/16
Inventor熊泉
OwnerZTE CORP