Light emitting diodes with improved light extraction efficiency
A technology of light-emitting diodes and electrodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as poor reflection characteristics, obstacles to light extraction efficiency of light-emitting diodes, etc., and achieve the effect of improving light extraction efficiency and improving adhesion
Active Publication Date: 2018-01-05
SEOUL VIOSYS CO LTD
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Problems solved by technology
[0011] However, since the electrode pad and the extension extending from the electrode pad are made of a material having poor reflective properties such as Au or Cu, a large amount of light occurs due to light absorption through the electrode pad and / or the extension. loss, such light loss acts as a major obstacle in improving the light extraction efficiency of LEDs
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[0053] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below are presented by way of example in an effort to fully convey the concept of the present invention to those skilled in the art. Therefore, the present invention is not limited to the following embodiments but can be implemented in many other forms. In the drawings, the width, length and thickness of components may be shown in an exaggerated scale for convenience. It will be understood that when an element is referred to as being "on" or "over" another element, the element may be "directly on" or "directly on" the other element The other component is "above" or there may also be an intermediate component between them. Throughout the specification and drawings, like components will be indicated by like reference numerals.
[0054] First, refer to Figure 2 to Figure 8 A light emitting diode according to an ...
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According to the present invention, a light emitting diode with improved light extraction efficiency includes: a semiconductor stack structure including an N layer, a light emitting layer, and a P layer formed on a substrate; an N-type electrode formed on the N layer; and a P-type electrode, It is formed on the P layer, wherein the N-type electrode and the P-type electrode include pad electrodes and dispersive electrodes, and the N-type electrode and / or P-type electrode includes a reflective electrode layer for reflecting light onto the dispersive electrodes. Therefore, light emitting diodes have reflective electrode layers on the electrodes to improve light extraction efficiency. In addition, the reflective layer is patterned under the pad unit, thus forming roughness and improving adhesion.
Description
technical field [0001] The present disclosure relates to a light emitting diode, and more particularly, to a light emitting diode having improved light extraction efficiency using a reflector for an electrode structure. Background technique [0002] Currently, LEDs are used in various application fields such as natural color LED display devices, LED traffic lights, and white LEDs. Recently, high-efficiency white LEDs have been expected to replace ordinary fluorescent lamps. Specifically, the efficiency of white LEDs is approaching that of ordinary fluorescent lamps. [0003] Generally, a light emitting diode is formed by growing an epitaxial layer on a substrate such as a sapphire substrate, and includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed therebetween. Meanwhile, an N-type electrode pad is formed on the N-type semiconductor layer, and a P-type electrode pad is formed on the P-type semiconductor layer. The light emitti...
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IPC IPC(8): H01L33/36H01L33/46
CPCH01L33/20H01L33/38H01L33/405H01L33/42H01L33/36H01L33/46H01L33/22H01L33/44
Inventor 李珍雄金京完尹余镇金艺瑟
Owner SEOUL VIOSYS CO LTD