A kind of antigen detection material and its preparation method and application
A technology for antigen detection and substrate materials, applied in the direction of analytical materials, metal material coating technology, measuring devices, etc., can solve the problems of limited detection methods, complex preparation methods of detection materials, and difficult control, and achieve low cost and high practical application Value, the effect of simple preparation process
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Embodiment 1
[0029] A porous silicon-based material capable of detecting HIV-1 antigen in a blood sample is prepared and used to detect the blood sample to be tested.
[0030] A. Preparation of porous silicon-based materials that can detect hepatitis B surface antigen in blood samples:
[0031] (1) Preparation of microporous silicon substrate by electrochemical etching method:
[0032] Clean the silicon wafers: ultrasonically clean the single-sided polished silicon wafers with acetone and deionized water for 3 minutes, then dry them in the air; then put them into a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 3:1 until No air bubbles are generated on the surface of the silicon wafer, the silicon wafer is taken out, rinsed with deionized water, soaked in 5% hydrofluoric acid aqueous solution for 1 min, then rinsed with deionized water, and blown dry with nitrogen.
[0033] Preparation of porous silicon by electrochemical etching method: use etha...
Embodiment 2
[0043] A porous silicon-based material capable of detecting hepatitis B surface antigen in blood samples is prepared and used to detect artificially prepared buffer solution samples containing hepatitis B surface antigen.
[0044] A. Preparation of porous silicon-based materials that can detect hepatitis B surface antigen in blood samples:
[0045] (1) Preparation of microporous silicon substrate by electrochemical etching method:
[0046] Clean the silicon wafers: ultrasonically clean the single-sided polished silicon wafers with acetone and deionized water for 3 minutes, then dry them in the air; then put them into a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 3:1 until No air bubbles are generated on the surface of the silicon wafer, the silicon wafer is taken out, rinsed with deionized water, soaked in 5% hydrofluoric acid aqueous solution for 1 min, then rinsed with deionized water, and blown dry with nitrogen.
[0047] Prepa...
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