Non-volatile memory and reset method thereof

A non-volatile and memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of increasing storage cell verification current, reset complementary switching, etc.

Active Publication Date: 2022-07-19
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This channel gap will continue to generate an electric field during the set / reset operation cycle, causing an additional conduction path to be generated, and the verification current of the memory cell will continue to increase, resulting in the so-called reset complementary switching phenomenon.

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  • Non-volatile memory and reset method thereof
  • Non-volatile memory and reset method thereof
  • Non-volatile memory and reset method thereof

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Embodiment Construction

[0034] Please refer to figure 1 , figure 1 A flow chart showing a method for resetting a nonvolatile memory according to an embodiment of the present invention. Wherein, in step S110, a first reset operation is performed for a plurality of memory cells that need to be reset. And, after the first reset action, a verification action is performed for the storage unit that performs the reset action. Here, the verification operation may apply a verification voltage to the memory cells, and measure a plurality of verification currents corresponding to the memory cells. Through the above verification current, it can be known that the reset operation performed by each memory cell has failed (fail) or passed (pass). In addition, in step S110, among all the storage cells, the number of first passing storage cells determined to be reset and the number of first failed storage cells determined to be reset failed can be calculated.

[0035] It is worth mentioning that if in step S110, a...

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Abstract

The present invention provides a non-volatile memory and a reset method thereof. The reset method includes: performing a first reset action for a plurality of memory cells; recording a plurality of first verification currents corresponding to the first failed memory cells respectively; performing a second reset action for the first failed memory cells, and for the first failed memory cell The two failed memory cells perform the verification operation, and obtain a plurality of second verification currents respectively; set the first voltage adjustment flag according to a plurality of first ratios of the first verification current and the corresponding second verification currents; and, according to The first voltage adjustment flag is used to adjust the reset voltage for performing the first reset action and the second reset action.

Description

technical field [0001] The present invention relates to a nonvolatile memory and a reset method thereof, in particular to a nonvolatile memory and a reset method thereof which can overcome the phenomenon of Reset Complementary Switching (Reset-CS). Background technique [0002] In a non-volatile memory, especially in a resistive memory, when a reset operation is performed on a memory cell, a phenomenon of a tunnel gap will be generated in the memory cell. This channel gap will continue to generate an electric field during the set / reset operation cycle, so that additional conduction paths are generated, and the verification current of the memory cell continues to increase, resulting in the so-called reset complementary switching phenomenon. SUMMARY OF THE INVENTION [0003] The present invention provides a non-volatile memory and a reset method thereof, which can overcome the phenomenon of Reset Complementary Switching (Reset-CS). [0004] The method for resetting a nonvol...

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G11C13/00
CPCG11C13/0064G11C13/0038
Inventor林铭哲赵鹤轩王炳琨林小峰张雅廸郑嘉文
OwnerWINBOND ELECTRONICS CORP