Data writing method and storage controller

A memory controller and data writing technology, which is applied in the input/output process of data processing, electrical digital data processing, instruments, etc., can solve the problem of longer time-consuming writing operations and achieve the effect of increasing time

Pending Publication Date: 2021-10-19
ACER INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, QLC solid-state drives are criticized for their service life and performance
Since a memory cell of NAND flash memory is divided into more electrons, the number of electrons entering the floating gate must be controlled more finely during the write operation, which causes the write operation to take longer.

Method used

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  • Data writing method and storage controller
  • Data writing method and storage controller
  • Data writing method and storage controller

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Experimental program
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Embodiment Construction

[0019] Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and description to refer to the same or like parts.

[0020] figure 1 It is a block diagram of a data writing system according to an embodiment of the present disclosure.

[0021] Please refer to figure 1 A data writing system 100 according to an embodiment of the present disclosure includes a storage controller 110 , a host 120 and a flash memory module 130 coupled to the storage controller 110 . The storage controller 110 includes a processor 111 . In one embodiment, the storage controller 110 and the flash memory module 130 may be included in a storage device such as a solid state disk, but the disclosure is not limited thereto. The host 120 is, for example, an electronic device such as a personal computer, a notebook computer, a table...

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Abstract

The invention provides a data writing method and a storage controller. The data writing method comprises the following steps: selecting a plurality of first particles and a plurality of second particles from a plurality of particles of the flash memory module; receiving a write-in instruction and judging the size of write-in data corresponding to the write-in instruction; and when the size of the write data is greater than the threshold value, writing the write data into the second particles using the virtual single-layer cell mode. According to the data writing method and the storage controller disclosed by the invention, only the second particles of the flash memory module part are utilized to perform the writing operation in the virtual single-layer unit mode, so that the time of good user experience can be prolonged.

Description

technical field [0001] The present disclosure relates to a data writing method and a storage controller, in particular to a data writing method and a storage controller that increase the time for good user experience. Background technique [0002] In order to save costs, Quad Level Cell (QLC) solid state drives (Solid State Drives, SSDs) have begun to be developed. However, QLC solid-state drives are criticized for their service life and performance. Since the more electrons are divided into a memory cell of the NAND flash memory, the number of electrons entering the floating gate must be controlled more finely during the writing operation, which results in longer time-consuming for the writing operation. Therefore, how to improve the performance of the QLC solid state drive is a goal that those skilled in the art should devote themselves to. Contents of the invention [0003] The present disclosure provides a data writing method and a storage controller, which increase ...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0611G06F3/0662G06F3/0679
Inventor侯冠宇傅子瑜
OwnerACER INC