Method for producing laminate, insulating material, and laminate

Abstract

A method for manufacturing a laminate includes: a step for forming a first insulating layer including a first thermosetting resin and first inorganic oxide particles on a first support substrate; and a step for bonding the first surface of the first insulating layer and the second surface of a second insulating layer comprising a second thermosetting resin. In the manufacturing method, the second insulating layer substantially does not include inorganic oxide particles or includes second inorganic oxide particles having a lower content than the first inorganic oxide particles included in the first insulating layer.

Description

Technical Field

[0001] The present invention relates to a method for producing a laminate, an insulating material, and a laminate. The present invention relates to a method for producing a laminate (semiconductor device) including, for example, a semiconductor chip, an insulating material used in the method for producing the laminate, and a laminate including a semiconductor chip. Background Art

[0002] As a method of connecting connection terminals in connecting semiconductor chips stacked vertically or connecting semiconductor packages such as silicone interposers and semiconductor chips, various methods of direct bonding technology for directly bonding metal connection terminals to each other have been proposed in recent years (for example, refer to patent documents 1 to 3). In the connection method based on the direct bonding technology, not only the connection terminals are bonded to each other, but also the insulating layers arranged around the connection terminals are bonded to each other. As the insulating layer, an inorganic insulating material such as silicon oxide is used.

[0003] Previous technical literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2020 / 0135636

[0006] Patent Document 2: U.S. Patent Application Publication No. 2020 / 0135683

[0007] Patent Document 3: U.S. Patent Application Publication No. 2020 / 0135684 Summary of the invention

[0008] Technical issues to be solved by the invention

[0009] In the direct bonding technology using inorganic insulating materials as insulating layers, the bonding between the insulating layers is sometimes affected by the chips (debris) generated in the process of cutting or the unevenness on the surface. Therefore, it is considered to use organic insulating materials such as resin materials that are softer and cheaper than inorganic materials as the direct bonding technology of the insulating layer, bury the chips in the organic resin material or suppress the unevenness on the surface during heating and forming. On the other hand, organic insulating materials are more susceptible to thermal expansion than inorganic insulating materials and sometimes cause positional displacement, so it is considered to add inorganic fillers to the organic insulating materials to reduce the thermal expansion coefficient of the insulating materials. However, the addition of inorganic fillers will lead to the embedding of the above-mentioned chips, the ability to suppress the unevenness on the surface, and the bonding force between the organic insulating layers. Therefore, it is desired to suppress the positional displacement when bonding the organic insulating layers to each other and to improve the bonding strength between the organic insulating layers.

[0010] Means for solving technical problems

[0011] As one aspect of the present invention, a method for producing a laminate is provided. The method for producing a laminate comprises: forming a first insulating layer including a first thermosetting resin and first inorganic oxide particles on a first supporting substrate; and laminating a first surface of the first insulating layer and a second surface of a second insulating layer including a second thermosetting resin. In the production method, the second insulating layer substantially does not include inorganic oxide particles or includes second inorganic oxide particles in a smaller content than the first inorganic oxide particles included in the first insulating layer.

[0012] In the method for making the stacked body, the first insulating layer includes a thermosetting resin and inorganic oxide particles, and on the other hand, the second insulating layer includes a thermosetting resin but does not include inorganic oxide particles or includes less inorganic oxide particles than the first insulating layer. Moreover, the first and second insulating layers are bonded to each other. In this case, the thermal expansion coefficient of the first insulating layer is suppressed by the inorganic oxide particles included in the first insulating layer. On the other hand, the second insulating layer does not include inorganic oxide particles or includes fewer inorganic oxide particles, so that the second insulating layer can be used to bury debris, suppress surface unevenness, and improve the bonding strength between the insulating layers. Therefore, according to the method for making the stacked body, the positional deviation when bonding the insulating layers to each other can be suppressed, and the bonding strength between the insulating layers can be improved. The "substantially not included" mentioned here is intended to also include the case where a very small amount of inorganic oxide is included in the second insulating layer.

[0013] In the method for producing the laminated body, the content of the second inorganic oxide particles in the second insulating material constituting the second insulating layer is preferably one fifth or less of the content of the first inorganic oxide particles included in the first insulating material constituting the first insulating layer. In this case, the second insulating layer can further achieve the burial of debris, the suppression of surface irregularities, and the improvement of the bonding strength between the insulating layers.

[0014] In the method for producing the laminate, the content of the second inorganic oxide particles in the second insulating material constituting the second insulating layer is preferably 5% by volume or less. In this case, the second insulating layer can further achieve the embedding of debris, the suppression of surface irregularities, and the improvement of the bonding strength between the insulating layers.

[0015] In the method for producing the laminated body, the second insulating material constituting the second insulating layer preferably does not substantially contain inorganic oxide particles. In this case, the second insulating layer can more reliably achieve the burial of debris, the suppression of surface irregularities, and the improvement of the bonding strength between the insulating layers.

[0016] In the method for making the above-mentioned laminate, the first insulating material including the first thermosetting resin and the first inorganic oxide particles is preferably adjusted to have a thermal expansion coefficient smaller than that of the second insulating material constituting the second insulating layer. In this case, the thermal expansion coefficient in the first insulating layer can be reduced, so the positional offset based on thermal expansion can be suppressed. Thus, a laminate with high bonding accuracy can be obtained. In addition, when copper (Cu) and other wirings are provided in the laminate, it may sometimes cause the expansion of the insulating material including the thermosetting resin to be greater than the expansion of the wiring, and the wiring cannot keep up with the expansion of the insulating layer, resulting in poor bonding between the wirings. However, according to the method for making the first insulating material, by lowering the thermal expansion coefficient, the difference in thermal expansion between the insulating material and the wiring can be reduced, and poor bonding between the wirings can be suppressed.

[0017] In the method for producing the laminated body, the first insulating material including the first thermosetting resin and the first inorganic oxide particles is preferably adjusted to have a thermal expansion coefficient of 40×10 -6 / K or less. In this case, the thermal expansion coefficient in the first insulating layer can be reduced, so the positional deviation due to thermal expansion can be suppressed. Thus, a stacked body with high bonding accuracy can be obtained. In addition, when copper (Cu) or other wiring is provided in the stacked body, the expansion of the insulating material including thermosetting resin or the like may sometimes be greater than the expansion of the wiring, and the wiring may not keep up with the expansion of the insulating layer, resulting in poor bonding between the wirings. However, according to this manufacturing method, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring can be reduced, and poor bonding between the wirings can be suppressed.

[0018] In the method for making the above-mentioned laminate, the content of the first inorganic oxide particles in the first insulating material including the first thermosetting resin and the first inorganic oxide particles is preferably 15 volume % to 70 volume %. In this case, the thermal expansion coefficient in the first insulating layer can be reduced by including inorganic oxide particles, so that the positional deviation based on thermal expansion can be suppressed. Thus, a laminate with high bonding accuracy can be obtained. In addition, when copper (Cu) and other wirings are provided in the laminate, it may sometimes cause the expansion of the insulating material including the thermosetting resin to be greater than the expansion of the wiring, and the wiring cannot keep up with the expansion of the insulating layer, resulting in poor bonding between the wirings. However, according to the method for making the first insulating material, by lowering the thermal expansion coefficient, the difference in thermal expansion between the insulating material and the wiring can be reduced, and poor bonding between the wirings can be suppressed.

[0019] The preparation method of the above-mentioned laminated body can also include the process of flattening the first surface of the first insulating layer. In the process of flattening the first insulating layer, the first insulating layer can be ground so that the arithmetic mean roughness of the first surface becomes less than 50nm. In the case of including inorganic oxide particles in the insulating layer, its surface roughness may be coarsened, but in this preparation method, the first insulating layer is ground before lamination. Thus, the precision and bonding strength when the first insulating layer is laminated to the second insulating layer can be more reliably improved. As a result, the precision and bonding strength when laminating the first insulating layer and the second insulating layer can be more reliably improved. In addition, the arithmetic mean roughness used here is the arithmetic mean roughness (Ra) specified by JIS B 06012001. The second insulating layer can also be ground in the same manner.

[0020] In the above-mentioned method for manufacturing a laminate, the first support substrate may include an inorganic interposer composed of an inorganic material or an organic interposer composed of an organic material including inorganic oxide particles. In this case, by reducing the thermal expansion coefficient of the insulating layer on the interposer side to reduce the difference in thermal expansion coefficient between the insulating layer and the interposer, it is possible to eliminate the unfavorable conditions during the assembly of the package, such as warping, cracks, poor installation, poor terminal connection, poor insulating layer formation, and interface peeling in the interposer. In addition, by reducing the thermal expansion coefficient of the insulating layer on the interposer side to reduce the difference in thermal expansion coefficient between the insulating layer and the interposer, it is possible to eliminate the unfavorable conditions of the laminate (or semiconductor device), such as deformation of the wiring, connection damage, material peeling, wiring short circuit, and material failure.

[0021] In the method for manufacturing the laminated body, a semiconductor chip may be mounted on the surface of the second insulating layer opposite to the second surface. In this case, by not including inorganic oxide particles or including a small amount of inorganic oxide particles in the insulating layer on the semiconductor chip side, it is possible to prevent the particles from adhering to the semiconductor chip and causing poor connection.

[0022] The method for producing the laminated body may further include a step of flattening the first surface of the first insulating layer; a step of forming a second insulating layer including a second thermosetting resin on a second supporting substrate; and a step of flattening the second surface of the second insulating layer. In the laminating step, the flattened first surface and the flattened second surface may be laminated. When the insulating layer includes inorganic oxide particles, the surface roughness may become coarser, but in the present production method, the insulating layer is flattened by grinding or the like before laminating. As a result, the bonding strength between the first insulating layer and the second insulating layer can be further improved.

[0023] The method for making the above-mentioned laminate preferably also includes a step of irradiating the second surface of the second insulating layer with ultraviolet rays. In this case, the surface of the resin material constituting the second insulating layer reacts with the ozone generated by the irradiation of ultraviolet rays, and the surface free energy increases, thereby generating highly reactive functional groups on the surface of the second insulating layer. In other words, the cured product of the thermosetting resin constituting the second insulating layer becomes close to the state before curing. Thus, the bonding strength between the first insulating layer and the second insulating layer can be further improved. In addition, in the case of irradiating ultraviolet rays, unlike plasma treatment, the second surface of the second insulating layer will not be roughened, so it will not hinder the bonding of the first insulating layer and the second insulating layer. However, surface treatment using plasma treatment can be performed. In addition, in the production method, as described above, the bonding of the first insulating layer and the second insulating layer is promoted by ultraviolet irradiation, so the heating temperature when bonding the first insulating layer and the second insulating layer can be reduced or the heating time can be shortened. Thus, the bonding process can be simplified or the influence of heating on the laminate (or semiconductor device) can be suppressed.

[0024] In the method for producing the laminate, in the step of laminating the first surface and the second surface, the first insulating layer and the second insulating layer may be laminated by heating at or below 250° C. In this case, the influence of heating on the laminate (or semiconductor device) can be suppressed.

[0025] The method for manufacturing the laminate may further include forming a first wiring electrode on the first supporting substrate, and in the step of forming the first insulating layer, the first wiring electrode may be sealed with a first insulating material including a first thermosetting resin and first inorganic oxide particles. Thus, the first wiring electrode is protected by the first insulating material.

[0026] The method for manufacturing the laminated body may further include: forming a second wiring electrode on a second supporting substrate; and forming a second insulating layer on the second supporting substrate so as to seal the second wiring electrode with a second insulating material including a second thermosetting resin, wherein in the laminating step, when laminating the first surface of the first insulating layer and the second surface of the second insulating layer, the connection terminal of the first wiring electrode and the connection terminal of the second wiring electrode may be bonded. In this case, the first connection terminal and the second connection terminal can be bonded more reliably.

[0027] As another aspect of the present invention, an insulating material is provided. The insulating material is an insulating material used in a method for producing a laminate, the method comprising: forming a first insulating layer on a first supporting substrate using an insulating material comprising a first thermosetting resin and first inorganic oxide particles; and laminating a first surface of the first insulating layer and a second surface of a second insulating layer comprising a second thermosetting resin. In the method for producing the insulating material, the second insulating layer substantially does not contain inorganic oxide particles or contains second inorganic oxide particles in a smaller content than the first inorganic oxide particles contained in the first insulating layer.

[0028] The insulating material includes a thermosetting resin and inorganic oxide particles, and the first insulating layer formed using the insulating material is bonded to the second insulating layer. In this case, the thermal expansion coefficient of the first insulating layer is suppressed by the inorganic oxide particles included in the first insulating layer. Thus, positional deviation when bonding the insulating layers can be suppressed.

[0029] The above insulating material is preferably adjusted to have a linear expansion coefficient of 40×10 -6 / K or less. In this case, the thermal expansion coefficient of the first insulating layer can be more reliably suppressed. Thus, positional deviation when the insulating layers are bonded together can be more reliably suppressed.

[0030] In the insulating material, the content of the first inorganic oxide particles in the insulating material may be 15 volume % to 70 volume %. In this case, the thermal expansion coefficient of the first insulating layer can be more reliably suppressed. Thus, positional deviation when the insulating layers are bonded together can be more reliably suppressed.

[0031] As another aspect of the present invention, another insulating material is provided. The insulating material is an insulating material used in a method for producing a laminate, the method comprising: forming a first insulating layer including a first thermosetting resin and first inorganic oxide particles on a first supporting substrate; and bonding a first surface of the first insulating layer and a second surface of a second insulating layer formed of an insulating material including a second thermosetting resin. In the method for producing the insulating material, the second insulating layer substantially does not include inorganic oxide particles or includes second inorganic oxide particles in a smaller content than the first inorganic oxide particles included in the first insulating layer.

[0032] The other insulating material includes a thermosetting resin but does not include inorganic oxide particles or includes less inorganic oxide particles than the first insulating layer, and the second insulating layer formed using the insulating material is bonded to the first insulating layer. In this case, the second insulating layer can be used to bury debris, suppress surface unevenness, and improve the bonding strength between the insulating layers. As a result, the bonding strength between the insulating layers can be improved.

[0033] The above-mentioned other insulating material preferably has a lower elastic modulus than the material constituting the first insulating layer when heated to at least 300° C. In this case, the second insulating layer can further achieve the embedding of debris, the suppression of surface unevenness, and the improvement of the bonding strength between the insulating layers. As a result, the bonding strength between the insulating layers can be further improved.

[0034] In the above-mentioned another insulating material, the content of the second inorganic oxide particles in the insulating material can be 5% by volume or less. In this case, the second insulating layer can further achieve the embedding of debris, the suppression of surface unevenness, and the improvement of the bonding strength between the insulating layers. Thus, the bonding strength between the insulating layers can be further improved.

[0035] As another aspect of the present invention, a laminate is provided. The laminate comprises: a first support substrate; a first insulating layer comprising a cured product of a first thermosetting resin and first inorganic oxide particles and formed on the first support substrate; and a second insulating layer comprising a cured product of a second thermosetting resin and bonded to the first insulating layer. The second insulating layer substantially does not contain inorganic oxide particles or contains second inorganic oxide particles in a smaller content than the first inorganic oxide particles contained in the first insulating layer.

[0036] In this laminate, the first insulating layer includes a cured product of a thermosetting resin and inorganic oxide particles, and the second insulating layer includes a cured product of a thermosetting resin but does not include inorganic oxide particles or includes less inorganic oxide particles than the first insulating layer, and the first and second insulating layers are bonded to each other. In this case, the thermal expansion coefficient of the first insulating layer is suppressed by the inorganic oxide particles included in the first insulating layer. On the other hand, the second insulating layer does not include inorganic oxide particles or includes fewer inorganic oxide particles, so that the second insulating layer can achieve the burial of debris, the suppression of surface unevenness, and the improvement of the bonding strength between the insulating layers. As a result, the positional deviation when bonding the insulating layers can be suppressed, and a laminate with improved bonding strength between the insulating layers can be obtained.

[0037] In the above laminate, the content of the second inorganic oxide particles in the second insulating layer may be 5% by volume or less. In this case, the second insulating layer can further achieve the embedding of debris, the suppression of surface irregularities, and the improvement of the bonding strength between the insulating layers.

[0038] The above-mentioned laminated body may further include a semiconductor chip disposed on a surface of the second insulating layer opposite to a surface thereof bonded to the first insulating layer.

[0039] In the above-mentioned laminate, the content of the first inorganic oxide particles in the first insulating layer can be 15 volume % to 70 volume %. In this case, the thermal expansion coefficient in the first insulating layer can be reduced by including inorganic oxide particles, so that a laminate can be provided in which positional displacement based on thermal expansion is suppressed. Thus, a laminate with high bonding accuracy can be obtained. In addition, when wiring such as copper (Cu) is provided in the laminate, it may sometimes cause the expansion of insulating materials including thermosetting resins to be greater than the expansion of wiring, and the wiring cannot keep up with the expansion of the insulating layer, resulting in poor bonding between the wirings. However, according to the laminate, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring can be reduced, thereby suppressing poor bonding between the wirings.

[0040] The laminate may further include: a first wiring electrode, at least a portion of which is disposed in the first insulating layer, and a connection terminal is exposed from a first surface of the first insulating layer that is bonded to the second insulating layer; and a second wiring electrode, at least a portion of which is disposed in the second insulating layer, and a connection terminal is exposed from a second surface of the second insulating layer that is bonded to the first insulating layer. In the laminate, the connection terminal of the first wiring electrode and the connection terminal of the second wiring electrode may be joined.

[0041] Effects of the Invention

[0042] According to the present invention, it is possible to provide a laminated body in which the bonding strength between the insulating layers is improved while suppressing positional deviation when the insulating layers are bonded together. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 It is a cross-sectional view showing an example of a laminated body.

[0044] Figure 2 It is an enlarged representation Figure 1 sectional view of the connection portion II in the stacked body shown in FIG.

[0045] Figure 3 It is used to illustrate the production Figure 1 A diagram schematically showing a connection method when a stacked body is shown in FIG.

[0046] Figure 4 It is a cross-sectional view showing another example of the laminated body.

[0047] Figure 5 It is an enlarged representation Figure 4 2 is a cross-sectional view of a connection portion V in a laminate shown in FIG.

[0048] Figure 6 It is used to illustrate the production Figure 4 A diagram schematically showing a connection method when a stacked body is shown in FIG.

[0049] Figure 7 middle, Figure 7 (a)~ Figure 7 (c) is a diagram showing a method for producing the first and second members used in producing the laminate.

[0050] Figure 8 middle, Figure 8 (a)~ Figure 8 (c) is a diagram showing a method for manufacturing the first and second components used in manufacturing the laminate, and Figure 7 The subsequent process.

[0051] Fig. 9 middle, Fig. 9 (a)~ Fig. 9 (d) is a diagram showing a method for manufacturing a first member used in manufacturing a laminate, and shows Figure 8 The subsequent process.

[0052] Fig.10 middle, Fig.10 (a)~ Fig.10 (c) is a diagram showing a method for manufacturing a second member used in manufacturing a laminate, and shows Figure 8 The subsequent process.

[0053] Fig.11 middle, Fig.11 (a) and Fig.11 (b) is a diagram showing a method for producing a laminate.

[0054] Fig.12 middle, Fig.12 (a)~ Fig.12 (c) is a diagram showing a method for producing a laminate.

[0055] Fig.13 middle, Fig.13 (a) is a cross-sectional view showing a laminated body produced by a production method different from that of the present embodiment, Fig.13 (b) is a cross-sectional view showing a laminated body produced by the production method according to the present embodiment.

[0056] Fig.14 middle, Fig.14 (a)~ Fig.14 (c) is a diagram showing the influence of thermal expansion in a laminated body produced by a method for producing a laminated body different from the present embodiment and a laminated body produced by the method.

[0057] Fig.15 middle, Fig.15 (a) and Fig.15 (b) is a diagram for explaining the state of embedding of foreign matter by the manufacturing method according to the present embodiment.

[0058] Fig.16 This is a table showing the bonding force (shear strength) in the method for producing a laminated body in the present embodiment. DETAILED DESCRIPTION

[0059] Hereinafter, the present embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description, the same symbols are marked for the same or equivalent parts, and repeated descriptions are omitted. In addition, regarding the positional relationship such as up, down, left, and right, unless otherwise specified, it is assumed to be based on the positional relationship shown in the accompanying drawings. In the description and claims of this specification, when terms such as "left", "right", "front", "back", "up", "down", "above", and "below" are used, they are intended to illustrate and do not necessarily mean that it is always this relative position. In addition, the dimensional ratios of the drawings are not limited to the ratios shown in the drawings.

[0060] In this specification, the term "layer" includes not only the structure of the shape formed on the entire surface but also the structure of the shape formed on a part when viewed from a top view. In this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes as long as the desired effect of the process can be achieved. In this specification, the numerical range represented by "A to B" means a range that includes the numerical values ​​A and B recorded before and after "to" as the minimum and maximum values, respectively.

[0061] (An example of a laminate)

[0062] refer to Figure 1 to Figure 3 , an example of a laminate is described. Figure 1 It is a cross-sectional view showing an example of a laminated body. Figure 2 It is an enlarged representation Figure 1 sectional view of the connection portion II in the stacked body shown in FIG. Figure 3 It is used to illustrate the production Figure 1 FIG. 1 is a diagram showing an overview of a connection method when a stacked body is shown in FIG. Figure 1 and Figure 2 As shown, the laminate 1 is a semiconductor device including a first component 10 and a second component 20. The first component 10 includes an interposer substrate 11 (first supporting substrate), an insulating layer 12, an insulating layer 13 (first insulating layer), and wiring electrodes 14. The second component 20 includes a semiconductor chip 21, an insulating layer 22 (second insulating layer), and wiring electrodes 23.

[0063] The interposer substrate 11 is, for example, a silicone (Si) interposer substrate. TSV (Through Silicon Via) 15 is provided in the interposer substrate 11, and the semiconductor chips and wiring above and below the interposer substrate 11 are electrically connected. The interposer substrate 11 may be a substrate formed of an inorganic material other than silicone (for example, a glass material). The thickness of the interposer substrate 11 is not particularly limited, but is, for example, 0.2 mm to 2.0 mm. By making the thickness of the interposer substrate 11 greater than 0.2 mm, the operability of the substrate can be improved. By making the thickness of the interposer substrate 11 less than 2.0 mm, the material cost can be suppressed. The interposer substrate 11 may be in the shape of a plate, but may also be in the shape of a wafer.

[0064] The insulating layer 12 is provided on the lower side of the interposer substrate 11. The insulating layer 12 is formed of an organic insulating material, which may or may not contain an inorganic filler. The insulating layer 12 may be provided with wiring electrodes (not shown) connected to the TSV 15.

[0065] The insulating layer 13 is an organic insulating layer (see FIG. 1 ) formed on the interposer substrate 11 and including a cured product 13a of a thermosetting resin (a cured product of a first thermosetting resin) and inorganic oxide particles 13b (a first inorganic oxide particle). Figure 2 ). The thickness of the insulating layer 13 can be, for example, 10 μm to 300 μm. When the thickness of the insulating layer 13 is 10 μm or more, the insulation of the wiring electrode 14 can be ensured, and the bonding force when the insulating layer 13 is bonded to the organic insulating layer 22 can be ensured. When the thickness of the insulating layer 13 is 300 μm or less, the thickness of the entire laminate 1 can be made thinner. The above-mentioned wiring electrode 14 is buried in the insulating layer 13 and is protected so that the connection terminal 14a of the wiring electrode 14 is exposed from the surface 13c (first surface) on the side of the insulating layer 13 bonded to the insulating layer 22.

[0066] The thermosetting resin used in the insulating layer 13 is not particularly limited, and may be, for example, epoxy resin, acrylic resin, methacrylic resin, maleimide resin, phenolic resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, or the like. Among them, the thermosetting resin used in the insulating layer 13 is preferably epoxy resin.

[0067] The inorganic oxide particles included in the insulating layer 13 are not particularly limited, and may be inorganic fillers such as silicon dioxide (SiO2), aluminum oxide (Al2O3), titanium dioxide (TiO2), tantalum oxide (Ta2O5), zirconium dioxide (ZrO2), and zinc oxide (ZnO). The inorganic oxide particles may be used alone or in combination of two or more. As an example, the inorganic oxide particles included in the insulating layer 13 are silicon dioxide fillers.

[0068] The content of the inorganic oxide particles included in the insulating layer 13 is, for example, 15 volume % to 70 volume % relative to the total volume of the insulating layer 13. When the content of the inorganic oxide particles is 15 volume % or more of the total volume, the proportion of the cured product of the thermosetting resin included in the insulating layer 13 is reduced and the linear expansion coefficient (CTE) of the insulating layer 13 is suppressed, thereby reducing the warpage when the laminate 1 is heated. When the content of the inorganic oxide particles is 70 volume % or less of the total volume, the bonding area between the thermosetting resins is sufficiently ensured, thereby improving the bonding strength between the insulating layer 13 and the insulating layer 22.

[0069] The wiring electrode 14 is a tiny electrode formed on the interposer substrate 11. A plurality of wiring electrodes 14 are provided in the insulating layer 13. When formed by plating or the like, the wiring electrode 14 can be configured to include a seed layer portion and a plating portion. The wiring electrode 14 is formed of, for example, a conductive material such as copper (Cu). The wiring electrode 14 can be an electrode pin. The wiring electrode 14 can be connected to the TSV 15, or to the wiring electrode 23 of the second component 20.

[0070] The semiconductor chip 21 is, for example, a logic IC or a memory IC.

[0071] The insulating layer 22 is an insulating layer that includes a cured product 22a of a thermosetting resin (cured product of a second thermosetting resin) and is provided on the lower side of the semiconductor chip 21. In other words, the semiconductor chip 21 is arranged on the surface of the insulating layer 22 opposite to the surface bonded to the insulating layer 13. The thickness of the insulating layer 22 can be the same as that of the insulating layer 13, for example, 10 μm to 300 μm, or thinner than the insulating layer 13. The wiring electrode 23 is buried in the insulating layer 22 and protected so that the connection terminal 23a is exposed from the surface 22c (second surface) on the side of the insulating layer 22 bonded to the insulating layer 13. The thermosetting resin used in the insulating layer 22 can be the same as the thermosetting resin used in the insulating layer 13, although there is no particular limitation, for example, epoxy resin can be used.

[0072] Unlike the insulating layer 13, the insulating layer 22 does not substantially include inorganic oxide particles. However, the insulating layer 22 may include some inorganic oxide particles (second inorganic oxide particles) in the cured product 22a of the thermosetting resin. In this case, the insulating layer 22 may include inorganic oxide particles whose content is less than that of the inorganic oxide particles 13b included in the insulating layer 13. For example, the content of the inorganic oxide particles included in the insulating layer 22 may be less than one-fifth of the content of the inorganic oxide particles 22b included in the insulating layer 22. Alternatively, the content of the inorganic oxide particles included in the insulating layer 22 may be, for example, less than 5% by volume relative to the total volume of the insulating layer 22. The "substantially not included" mentioned here is intended to include the case where the insulating layer 22 includes a very small amount of inorganic oxide.

[0073] The wiring electrode 23 is a tiny electrode formed on the semiconductor chip 21 (lower surface). A plurality of wiring electrodes 23 are provided on the semiconductor chip 21, and are electrically connected to the connection terminals of the semiconductor chip 21. When formed by plating or the like, the wiring electrode 23 can be configured to include a seed layer portion and a plating portion. The wiring electrode 23 is formed of, for example, a conductive material such as copper (Cu). The wiring electrode 23 can be an electrode pin. As described above, the wiring electrode 23 can be electrically connected to the connection terminal of the semiconductor chip 21 at one end, and connected to the wiring electrode 14 of the first component 10 or the like at the other end.

[0074] In the laminate 1, the wiring electrodes 14 and the wiring electrodes 23 are provided in the insulating layers 13 and 22 in a manner corresponding to each other. Figure 3 When joined as shown, the connection terminal 14a and the connection terminal 23a are joined. In addition, the cured products 13a and 22a of the thermosetting resin included in the insulating layers 13 and 22 are also bonded to each other. In the laminated body 1, the insulating layer 13 includes the cured product 13a of the thermosetting resin and the inorganic oxide particles 13b, and on the other hand, the insulating layer 22 includes the cured product 22a of the thermosetting resin but does not include the inorganic oxide particles or includes less inorganic oxide particles than the insulating layer 13, and these insulating layers 13 and 22 are bonded to each other. Therefore, the thermal expansion coefficient of the insulating layer 13 is suppressed by the inorganic oxide particles included in the insulating layer 13. On the other hand, by not including the inorganic oxide particles or including less inorganic oxide particles in the insulating layer 22, the embedding of debris, the suppression of surface unevenness, and the improvement of the bonding force between the insulating layers 13 and 22 are achieved by the insulating layer 22. As described above, in the laminated body 1 , positional deviation when the insulating layers are bonded together can be suppressed, and a laminated body with improved bonding strength between the insulating layers can be obtained.

[0075] In addition, in the laminated body 1, contrary to the above, the insulating layer 13 of the first member 10 may be configured to include substantially no inorganic oxide particles (or to include inorganic oxide particles in a content less than that of the inorganic oxide particles included in the insulating layer 22). In this case, the insulating layer 22 of the second member 20 includes inorganic oxide particles, and the content of the inorganic oxide particles included in the insulating layer 22 may be, for example, 15 volume % to 70 volume % relative to the total volume of the insulating layer 22. That is, in this modification, the content of the inorganic oxide particles in the insulating layer 13 of the first member 10 is opposite to the content of the inorganic oxide particles in the insulating layer 22 of the second member 20. Even in this modification, the same effects as described above can be obtained.

[0076] (Another example of laminate)

[0077] refer to Figures 4 to 6 , another example of the laminate is described. Figure 4 It is a cross-sectional view showing another example of the laminated body. Figure 5 It is an enlarged representation Figure 4 2 is a cross-sectional view of a connection portion V in a laminate shown in FIG. Figure 6 It is used to illustrate the production Figure 4 FIG. 1 is a diagram showing an overview of a connection method when a stacked body is shown in FIG. Figure 4 and Figure 5 As shown, the laminate 1A is a semiconductor device including a first component 30 and a second component 20. The first component 30 includes a substrate 31 (first supporting substrate), an insulating layer 32, an insulating layer 33 (first insulating layer), wiring electrodes 34, and a semiconductor chip 35. The first component 30 may be an organic interposer. Figure 1 Similar to the laminated body 1 shown in , the second member 20 includes a semiconductor chip 21 , an insulating layer 22 (second insulating layer), and wiring electrodes 23 .

[0078] The substrate 31 is, for example, a glass substrate or an organic substrate. The thickness of the substrate 31 is not particularly limited, but is, for example, 0.7 mm to 1.5 mm. When the thickness of the substrate 31 is 0.7 mm or more, the operability of the substrate can be improved. When the thickness of the substrate 31 is 1.5 mm or less, the material cost can be suppressed. The substrate 31 may be in the shape of a plate, but may also be in the shape of a wafer.

[0079] The insulating layer 32 is an insulating layer provided on the substrate 31. The insulating layer 32 is formed of an organic insulating material, and the organic insulating material may or may not contain an inorganic filler. The insulating layer 32 is a thinner layer than the insulating layer 33 described later.

[0080] The insulating layer 33 is an organic insulating layer (see FIG. 1 ) formed on the substrate 31 via the insulating layer 32 and including a cured product 33a of a thermosetting resin (a cured product of a first thermosetting resin) and inorganic oxide particles 33b (a first inorganic oxide particle). Figure 5 ). The insulating layer 33 also functions as a sealing material layer that seals the semiconductor chip 35 mounted on the substrate 31. The thickness of the insulating layer 33 can be, for example, 50μm to 300μm. By making the thickness of the insulating layer 33 greater than 50μm, the insulation of the wiring electrode 34 can be ensured, and the bonding force when the insulating layer 33 is bonded to the insulating layer 22 can be ensured. By making the thickness of the insulating layer 33 less than 300μm, the overall thickness of the stack 1A can be made thinner. The above-mentioned wiring electrode 34 is buried in the insulating layer 33 and is protected so that the connection terminal 34a of the wiring electrode 34 is exposed from the surface 33c (first surface) on the side of the insulating layer 33 bonded to the insulating layer 22.

[0081] The thermosetting resin used in the insulating layer 33 is not particularly limited, and may be, for example, epoxy resin, acrylic resin, methacrylic resin, maleimide resin, phenolic resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, or the like. Among them, the thermosetting resin used in the insulating layer 33 is preferably epoxy resin.

[0082] The inorganic oxide particles included in the insulating layer 33 are not particularly limited, and may be, for example, inorganic fillers such as silicon dioxide (SiO2), aluminum oxide (Al2O3), titanium dioxide (TiO2), tantalum oxide (Ta2O5), zirconium dioxide (ZrO2), and zinc oxide (ZnO). The inorganic oxide particles may be used alone or in combination of two or more. As an example, the inorganic oxide particles included in the insulating layer 33 are silicon dioxide fillers.

[0083] The content of the inorganic oxide particles included in the insulating layer 33 is, for example, 15 volume % to 70 volume % relative to the total volume of the insulating layer 33. When the content of the inorganic oxide particles is 15 volume % or more of the total volume, the proportion of the cured product of the thermosetting resin included in the insulating layer 33 is reduced and the linear expansion coefficient (CTE) of the insulating layer 13 is suppressed, thereby reducing the warpage when the stacked body 1A is heated. When the content of the inorganic oxide particles is 70 volume % or less of the total volume, the bonding area between the thermosetting resins is sufficiently ensured, thereby improving the bonding strength between the insulating layer 33 and the insulating layer 22.

[0084] In the laminate 1A, similarly to the laminate 1, the wiring electrodes 34 and the wiring electrodes 23 are provided in the insulating layers 33 and 22 so as to correspond to each other. Figure 6 When joined as shown, the connection terminal 34a and the connection terminal 23a are joined. In addition, the cured products 33a and 22a of the thermosetting resin included in the insulating layers 33 and 22 are also bonded to each other. In the stacked body 1A, the insulating layer 33 includes the cured product 33a of the thermosetting resin and the inorganic oxide particles 33b, while the insulating layer 22 includes the cured product 22a of the thermosetting resin but does not include the inorganic oxide particles (or includes less inorganic oxide particles than the insulating layer 13), and such insulating layers 33 and 22 are bonded to each other. Therefore, the thermal expansion coefficient of the insulating layer 33 is suppressed by the inorganic oxide particles 33b included in the insulating layer 33. In the stacked body 1A, the thickness of the insulating layer 33 is thicker than that of the insulating layer 22, so that the thermal expansion of the stacked body 1A as a whole can be reduced. On the other hand, by not including inorganic oxide particles or including a small amount of inorganic oxide particles in the insulating layer 22, debris can be buried by the insulating layer 22, surface irregularities can be suppressed, and the bonding strength between the insulating layers 33 and 22 can be improved. In this way, in the laminated body 1A, positional deviation when the insulating layers are bonded to each other can be suppressed, and a laminated body with improved bonding strength between the insulating layers can be obtained.

[0085] In addition, in the laminated body 1A, in contrast to the above, the insulating layer 33 of the first member 30 may be configured to include substantially no inorganic oxide particles (or to include inorganic oxide particles in a content less than that of the inorganic oxide particles included in the insulating layer 22). In this case, the insulating layer 22 of the second member 20 includes inorganic oxide particles, and the content of the inorganic oxide particles included in the insulating layer 22 may be, for example, 15 volume % to 70 volume % relative to the total volume of the insulating layer 22. That is, in this modification, the content of the inorganic oxide particles in the insulating layer 33 of the first member 30 is opposite to the content of the inorganic oxide particles in the insulating layer 22 of the second member 20. Even in this modification, the same effects as described above can be obtained.

[0086] (Method for manufacturing semiconductor device)

[0087] Next, refer to Figure 7 to Figure 12 , the manufacturing method of the above-mentioned laminated bodies 1 and 1A (the manufacturing method of the laminated body) is described in sequence. Figure 7 to Figure 9 It is a figure which shows the manufacturing method of the 1st member used when manufacturing a laminated body. Figure 7 , Figure 8 and Fig.10 It is a figure which shows the manufacturing method of the 2nd member used when manufacturing a laminated body. Fig.11 and Fig.121 is a diagram showing a method for manufacturing a laminate. In the following description, the method for manufacturing the connection structure of the first component 10 and the second component 20 is mainly described. The description of the manufacture of the interposer substrate 11, the insulating layer 12, and the TSV 15 is omitted because they can be manufactured using conventional techniques. The method for manufacturing the connection structure of the first component 30 and the second component 20 is also the same, so the description is sometimes omitted.

[0088] First, the first component 10 is manufactured. Figure 7 As shown in (a), in order to make the first component 10, a seed layer 102 is formed on a supporting substrate 101 (first supporting substrate). The seed layer 102 is a portion that becomes a seed when forming the copper electroplating described later, and is formed of, for example, nickel. The supporting substrate 101 is not particularly limited, but is, for example, a highly rigid substrate such as a silicone plate or a glass plate. The thickness of the supporting substrate 101 is not particularly limited, but is, for example, 0.2 mm to 2.0 mm. By having the supporting substrate 101 be greater than 0.2 mm, the operability of the supporting substrate 101 can be improved. By having the supporting substrate 101 be less than 2.0 mm, the material cost can be suppressed to reduce costs. The supporting substrate 101 can be in the shape of a wafer or in the shape of a plate. The size of the supporting substrate 101 is not particularly limited, but, for example, it can be a wafer with a diameter of 200 mm, a diameter of 300 mm, or a diameter of 450 mm, or a rectangular plate with a side of 300 mm to 700 mm. For example, the supporting substrate 101 corresponds to the intermediate layer substrate 11 of the first component 10.

[0089] Then, if Figure 7 As shown in (b), a photosensitive resist is applied on the seed layer 102 to form a resist layer 103. The photosensitive resist can be made of a known material as appropriate. Figure 7 As shown in (c), exposure is performed to form a through hole 104 in a region corresponding to the wiring electrode. Thus, a through hole 104 is formed in which the seed layer 102 is exposed.

[0090] Then, if Figure 8 As shown in (a), a wiring electrode 105 (first wiring electrode) is formed on the seed layer 102 in the through hole 104 by copper electroplating. Figure 8 (b) and Figure 8 As shown in (c), the resist layer 103 is peeled off and removed, and the seed layer 102 of the portion other than the wiring electrode 105 is removed by etching. Thus, the wiring electrode 105 including the seed portion 102a is formed on the support substrate 101. In addition, the method for forming the wiring electrode 105 is not limited to this, and the wiring electrode 105 can be formed by other methods. The wiring electrode 105 formed in this way can function as a wiring pad, an electrode pad, a connection bump or a column, etc.

[0091] Then, if Fig. 9 As shown in (a), an insulating layer 106 is formed on a supporting substrate 101 so that the wiring electrode 105 is sealed by an organic insulating material (first insulating material) including a thermosetting resin 106a (first thermosetting resin) and inorganic oxide particles 106b (first inorganic oxide particles). At this time, the wiring electrode 105 can be completely covered by the organic insulating material. In this formation, the organic insulating layer 106 including the thermosetting resin 106a and the inorganic oxide particles 106b can be sealed by forming in a mold using a compression method or a transfer method molding machine. Alternatively, the organic insulating layer 106 including the thermosetting resin 106a and the inorganic oxide particles 106b formed into a film can also be sealed using a laminating molding machine of a roll method or a pressurization method. The sealed supporting substrate 101 is heated using an oven or a hot plate. Thus, the organic insulating layer 106 including the thermosetting resin 106a and the inorganic oxide particles 106b is formed on the supporting substrate 101. By this heating, the thermosetting resin of the organic insulating layer 106 may be in a completely cured state, or may be in an incompletely cured state (for example, semi-cured, B stage).

[0092] The materials of the thermosetting resin 106a and the inorganic oxide particles 106b constituting the organic insulating layer 106 are not particularly limited, but from the viewpoint of high rigidity and embedding property, for example, a sealing material that can be formed in a mold using a compression or transfer molding machine. Alternatively, the material constituting the organic insulating layer 106 may also be a sealing material, a deposition material, or a solder resist material formed into a film. In this case, from the viewpoint of preventing air bubbles from being drawn in, the film-like material may also be laminated on the supporting substrate 101 under reduced pressure.

[0093] The thermosetting resin constituting the organic insulating layer 106 is not particularly limited, and for example, epoxy resin, acrylic resin, methacrylic resin, maleimide resin, phenolic resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, etc. can be used. Among the above-mentioned thermosetting resins, the thermosetting resin used in the organic insulating layer 106 is preferably an epoxy resin.

[0094] The thermosetting resin may contain a crosslinking agent for thermal crosslinking. Although not particularly limited, known crosslinking agents may be used, such as epoxy compounds, isocyanate compounds, phenolic resins, phenoxy resins, unsaturated polyester resins, alkyd resins, urethane resins, melamine resins, urea-formaldehyde resins, guanamine resins, polyimide resins, polyamide resins, vinyl ester resins, diallyl phthalate resins, etc., and two or more may be used simultaneously.

[0095] The inorganic oxide particles constituting the organic insulating layer 106 are not particularly limited, and for example, inorganic fillers such as silicon dioxide (SiO2), aluminum oxide (Al2O3), titanium dioxide (TiO2), tantalum oxide (Ta2O5), zirconium dioxide (ZrO2), and zinc oxide (ZnO) can be used. One type of inorganic oxide particles can be used alone, or two or more types can be used simultaneously. As an example, the inorganic oxide particles included in the organic insulating layer 106 are silicon dioxide fillers.

[0096] The content of the inorganic oxide particles included in the organic insulating layer 106 is, for example, 15 volume % to 70 volume % of the total volume of the organic insulating material constituting the organic insulating layer 106. By making the content of the inorganic oxide particles 15 volume % or more of the total volume, the overall linear expansion coefficient (CTE) of the organic insulating layer 106 can be suppressed from becoming higher, thereby reducing the warping after the sealing process and the lamination process. By making the content of the inorganic oxide particles 70 volume % or less of the total volume, when the surfaces of the polished substrates are heated and pressed together in the lamination process described later, the bonding area of ​​the thermosetting resins can be ensured, thereby obtaining sufficient bonding strength. The organic insulating material used in the formation of the organic insulating layer 106 can also be adjusted to have a thermal expansion coefficient of 40×10 -6 / K or less.

[0097] The materials of the thermosetting resin and inorganic oxide particles constituting the organic insulating layer 106 are not particularly limited and can be selected according to the structure of the semiconductor package to which it is applied. For example, in the case of a semiconductor package in which a memory is stacked on an interposer substrate to which a sealing material (laminated body 1A, etc.) is applied, when stacking the sealing material constituting the interposer and the sealing material formed in a manner covering the memory chip, the sealing materials are stacked on each other by applying the above-mentioned manufacturing method.

[0098] The thickness of the organic insulating layer 106 is, for example, 10 μm to 400 μm. When the thickness of the organic insulating layer 106 is 10 μm or more, the bonding force when the organic insulating layer 106 is attached to another organic insulating layer can be ensured. When the thickness of the organic insulating layer 106 is 400 μm or less, the warping of the entire substrate is reduced, so that it is easy to be adsorbed into the device in the subsequent grinding process.

[0099] Then, if Fig. 9 (a) and Fig. 9As shown in (b), the surface 106c of the organic insulating layer 106 formed on the supporting substrate 101 is ground so that the organic insulating layer 106 has a predetermined thickness. The grinding is performed, for example, by a grinding method using a high-speed rotating grindstone. Through the grinding process, the surface 105a of the wiring electrode 105 is exposed from the surface 106d of the organic insulating layer 106A. The surface roughness of the organic insulating layer 106A including the thermosetting resin 106a and the inorganic oxide particles 106b subjected to the grinding treatment has an arithmetic mean roughness Ra of less than 0.5 μm when measured at a magnification of 20 times using a laser microscope from the viewpoint of grinding deviation in the subsequent polishing treatment. Fig. 9 In (b), the state where the surface 106d has a certain degree of roughness is emphasized. The arithmetic mean roughness Ra used here is the arithmetic mean roughness (Ra) specified in JIS B 0601-2001.

[0100] Then, if Fig. 9 As shown in (c), the surface 106d of the organic insulating layer 106A including the thermosetting resin 106a and the inorganic oxide particles 106b is polished by chemical mechanical polishing (CMP) using a polishing liquid to make it flat. In this polishing process, the surface 106d of the organic insulating layer 106A including the thermosetting resin 106a and the inorganic oxide particles 106b is flattened. This polishing process is implemented, for example, by supplying a polishing liquid 112 between a polishing pad 111 (polishing cloth) and a polished portion (organic insulating layer 106A) on a supporting substrate 101 and polishing the polished portion. Various polishing liquids can be used as the polishing liquid 112 for CMP. The polishing liquid for CMP is classified according to the type of abrasive particles (polishing particles) contained, and as abrasive particles, for example, there are cerium oxide (ceria) particles, silicon oxide (silicon dioxide) particles, aluminum oxide (alumina) particles or organic resin particles. From the perspective of polishing speed, as abrasive particles, for example, cerium dioxide-based particles are suitable.

[0101] By this grinding, the surface 106d of the organic insulating layer 106A can be ground so that the arithmetic mean roughness Ra of the surface 106e is less than 50nm. By making the arithmetic mean roughness Ra of the surface 106e of the organic insulating layer 106B less than 50nm, the granulation of the filler in the organic insulating layer 106B and the insufficient grinding of the filler surface can be suppressed. In addition, it is prevented that gaps are generated at the bonding interface between the organic insulating layers due to the wear of the surface 106e of the organic insulating layer 106B, and the bonding between the organic insulating layers described later can be made more reliable. The arithmetic mean roughness Ra of the organic insulating layer 106B subjected to the grinding treatment is less than 50nm, and grinding or grinding can be performed by methods other than CMP. For example, grinding based on the fly cutting method can be applied. In addition, the fly cutting method and etching can be combined.

[0102] The thickness of the organic insulating layer 106B after the grinding and polishing steps is, for example, 1 μm to 300 μm. When the thickness of the organic insulating layer 106B is 1 μm or more, there is no need to grind the embedded wiring and electrodes excessively, thereby improving the yield. When the thickness of the organic insulating layer 106B is 300 μm or less, the warping of the entire substrate is suppressed, and in the later-described pressing step, it is possible to prevent the generation of gaps in the contact interface and prevent the pressing from being impossible. Thus, the first component 10 is formed.

[0103] like Fig.11 As shown in (a), the surface 106e of the polished organic insulating layer 106B can be irradiated with plasma (O2 or Ar) or ultraviolet rays (UV) from the irradiator 120. When irradiated with ultraviolet rays, the surface of the resin material constituting the organic insulating layer 106B reacts with the ozone generated by the irradiation of ultraviolet rays, and the surface free energy increases, thereby generating highly reactive functional groups on the surface 106e of the organic insulating layer 106B. As a result, the cured product of the thermosetting resin constituting the organic insulating layer 106B becomes close to the state before curing. Therefore, the bonding strength when the organic insulating layer 106B is attached to the organic insulating layer 206A can be improved. In addition, when irradiated with ultraviolet rays, unlike plasma treatment, the surface 106e of the organic insulating layer 106B will not be roughened, so it will not hinder the bonding of the organic insulating layer 106B and the organic insulating layer 206A. Ultraviolet irradiation promotes the bonding of the organic insulating layer 106B and the organic insulating layer 206A, so the heating temperature when bonding the organic insulating layer 106B and the organic insulating layer 206A can be lowered or the heating time can be shortened compared to the past. For example, ultraviolet irradiation can set the heating temperature when bonding the organic insulating layer 106B and the organic insulating layer 206A to 250° C. or less. This can simplify the bonding process or suppress the influence of heating on the stacked body (or semiconductor device).

[0104] Next, the second member 20 is manufactured in the same manner as the first member 10. In the same manner as the manufacturing method (first half) of the first member 10, Figure 7As shown in (a), in order to manufacture the second component 20, a seed layer 202 is formed on a supporting substrate 201 (second supporting substrate). The seed layer 202 is a portion that serves as a seed when forming the copper electroplating described later, and is formed of, for example, nickel or the like. The supporting substrate 201 is not particularly limited, but is, for example, a silicone wafer formed with a semiconductor chip or the like. The thickness of the supporting substrate 201 is not particularly limited, but is, for example, 0.2 mm to 2.0 mm. The supporting substrate 201 may be in the shape of a wafer or in the shape of a plate. The size of the supporting substrate 201 is not particularly limited, but may be, for example, a wafer with a diameter of 200 mm, a diameter of 300 mm, or a diameter of 450 mm, or a rectangular plate with a side of 300 mm to 700 mm. The supporting substrate 201 corresponds to, for example, the semiconductor chip 21 of the second component 20.

[0105] Then, if Figure 7 As shown in (b), a photosensitive resist is applied on the seed layer 202 to form a resist layer 203. The photosensitive resist can be made of a known material as appropriate. Figure 7 As shown in (c), exposure is performed to form a through hole 204 in a region corresponding to the wiring electrode. Thus, a through hole 204 is formed in which the seed layer 202 is exposed.

[0106] Then, if Figure 8 As shown in (a), a wiring electrode 205 (second wiring electrode) is formed on the seed layer 202 in the through hole 204 by copper electroplating. Figure 8 (b) and Figure 8 As shown in (c), the resist layer 203 is peeled off and removed, and the seed layer 202 is removed by etching except for the wiring electrode 205. Thus, the wiring electrode 205 including the seed portion 202a is formed on the support substrate 201. In addition, similarly to the wiring electrode 105, the wiring electrode 205 can be formed in other directions.

[0107] Then, if Fig.10As shown in (a), an insulating layer 206 is formed on a supporting substrate 201 so that the wiring electrode 205 is sealed by an organic insulating material (second insulating material) composed of a thermosetting resin (second thermosetting resin). At this time, the wiring electrode 205 can be in a state of being completely covered by the organic insulating material. In this formation, the organic insulating layer 206 including the thermosetting resin 206a can be sealed by forming it in a mold using a compression-type or transfer-type molding machine. Alternatively, the organic insulating layer 206 formed into a film can be sealed using a laminating molding machine using a roller type or a pressurization type. The sealed supporting substrate 201 is heated using an oven or a hot plate. Thus, an organic insulating layer 206 including a thermosetting resin and inorganic oxide particles is formed on the supporting substrate 201. By this heating, the thermosetting resin of the organic insulating layer 206 can be in a state of complete curing, or can be in an incompletely cured state (for example, semi-cured, B stage).

[0108] The material of the thermosetting resin constituting the organic insulating layer 206 is not particularly limited, but from the viewpoint of high rigidity and embedding property, it can be, for example, a sealing material that can be formed in a mold using a compression or transfer molding machine. Alternatively, the material constituting the organic insulating layer 206 can be a sealing material, a deposition material, or a solder resist material formed into a film. In this case, from the viewpoint of preventing air bubbles from being drawn in, the film-like material can also be stacked on the supporting substrate 201 under reduced pressure.

[0109] The thermosetting resin constituting the organic insulating layer 206 is not particularly limited, and for example, epoxy resin, acrylic resin, methacrylic resin, maleimide resin, phenolic resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, etc. can be used. Among the above-mentioned thermosetting resins, the thermosetting resin used in the organic insulating layer 206 is preferably epoxy resin.

[0110] The thermosetting resin may contain a crosslinking agent for thermal crosslinking. Although not particularly limited, known crosslinking agents may be used, such as epoxy compounds, isocyanate compounds, phenolic resins, phenoxy resins, unsaturated polyester resins, alkyd resins, urethane resins, melamine resins, urea-formaldehyde resins, guanamine resins, polyimide resins, polyamide resins, vinyl ester resins, diallyl phthalate resins, etc., and two or more may be used simultaneously.

[0111] As described above, the organic insulating material forming the organic insulating layer 206 preferably does not substantially contain inorganic oxide particles, but may include inorganic oxide particles in a content less than that of the inorganic oxide particles 106b included in the organic insulating layer 106. In this case, the content of the inorganic oxide particles in the organic insulating material constituting the organic insulating layer 206 may be one-fifth or less of the content of the inorganic oxide particles 106b included in the organic insulating material constituting the organic insulating layer 106. The content of the inorganic oxide particles in the organic insulating material constituting the organic insulating layer 206 may be 5 volume % or less.

[0112] Then, if Fig.10 As shown in (b), the surface 206c of the organic insulating layer 206 formed on the supporting substrate 201 is polished so that the organic insulating layer 206 has a predetermined thickness. For this polishing, the surface 206c of the organic insulating layer 206 including the thermosetting resin is polished to be flattened by chemical mechanical polishing (CMP) using a polishing liquid. In this polishing process, the surface 206c of the organic insulating layer 206 including the thermosetting resin is flattened. This polishing process is implemented, for example, by supplying a polishing liquid 212 between a polishing pad 211 (polishing cloth) and a polished portion (organic insulating layer 206) on the supporting substrate 201 and polishing the polished portion. Various polishing liquids can be used as the polishing liquid for CMP. The polishing liquid for CMP is classified according to the type of abrasive particles (polishing particles) contained, and as the abrasive particles, for example, there are cerium oxide (ceria) particles, silicon oxide (silicon dioxide) particles, aluminum oxide (alumina) particles or organic resin particles. From the perspective of polishing speed, as the abrasive particles, for example, cerium dioxide-based particles are suitable.

[0113] By this grinding, the surface 205a of the wiring electrode 205 is exposed from the surface 206d of the organic insulating layer 206A. The surface 206d of the organic insulating layer 206A can be ground so that the arithmetic mean roughness Ra of the surface 206d is 50nm or less. By making the arithmetic mean roughness Ra of the surface 206d of the organic insulating layer 206A 50nm or less, it is prevented that gaps are generated in the bonding interface between the organic insulating layers due to the wear of the surface 206d of the organic insulating layer 206A, and the bonding between the organic insulating layers described later can be made more reliable. The arithmetic mean roughness Ra of the organic insulating layer 206A subjected to the grinding treatment is 50nm or less, and grinding or grinding can be performed by a method other than CMP. For example, grinding based on the fly cutting method can be applied. The fly cutting method and etching can be combined. In the production of the second component 20, if the inorganic oxide particles are not included, the grinding process in the production of the first component 10 can be omitted, but if the inorganic oxide particles are included, the same grinding process can be performed.

[0114] The thickness of the organic insulating layer 206A subjected to the above-mentioned grinding process is, for example, 1 μm to 300 μm. When the thickness of the organic insulating layer 206A is 1 μm or more, there is no need to grind the embedded wiring and electrodes excessively, thereby improving the yield. When the thickness of the organic insulating layer 206A is 300 μm or less, the warping of the entire substrate is suppressed, and in the later-described pressing process, it is possible to prevent the generation of gaps in the contact interface and the inability to perform pressing. Thus, the second component 20 is formed.

[0115] like Fig.11 As shown in (b), the surface 206d of the ground organic insulating layer 206A can be irradiated with plasma (O2 or Ar) or ultraviolet rays (UV) from the irradiator 220. When irradiated with ultraviolet rays, the surface of the resin material constituting the organic insulating layer 206A reacts with the ozone generated by the irradiation of ultraviolet rays, and the surface free energy increases, thereby generating highly reactive functional groups on the surface 206d of the organic insulating layer 206A. As a result, the cured product of the thermosetting resin constituting the organic insulating layer 206A becomes close to the state before curing. Therefore, it is possible to improve the bonding strength when the organic insulating layer 206A is attached to the organic insulating layer 106B. When irradiated with ultraviolet rays, unlike plasma treatment, the surface 206d of the organic insulating layer 206A will not be roughened, so it will not hinder the bonding of the organic insulating layer 106B and the organic insulating layer 206A. The ultraviolet irradiation promotes the bonding of the organic insulating layer 106B and the organic insulating layer 206A, so the heating temperature when bonding the organic insulating layer 106B and the organic insulating layer 206A can be lowered or the heating time can be shortened. As a result, the bonding process can be simplified or the effect of heating on the laminate (or semiconductor device, semiconductor chip) can be suppressed. The organic insulating layer 206A does not contain inorganic oxide particles or contains a trace amount of inorganic oxide particles, so the effect of the surface modification by ultraviolet irradiation can be set to be higher than that of the organic insulating layer 106A.

[0116] Next, if the first component 10 and the second component 20 whose surfaces are flattened in the grinding process are prepared, Fig.12 As shown in (a), the surface 106e of the organic insulating layer 106B of the first component 10 and the surface 206d of the organic insulating layer 206A of the second component 20 are bonded together by heating and pressing (compression bonding). During this bonding, compression bonding can be performed under a nitrogen atmosphere. By setting the oxygen concentration during this compression bonding to 1000 ppm or less, it is possible to prevent the surfaces of the wiring electrodes 105, 205, the thermosetting resin, and the inorganic oxide particles exposed by the grinding process from being oxidized, thereby reducing adhesion defects.

[0117] In the bonding process, the heating temperature when the flattened organic insulating layers 106B and 206A are pressed and bonded to each other is, for example, 200°C to 400°C. By setting the heating temperature during the bonding to 200°C or more, insufficient melting of the resin and poor bonding between the wiring layers can be prevented, thereby improving the bonding strength between the organic insulating layers 106B and 206A. By setting the heating temperature during the bonding to 400°C or less, decomposition of the thermosetting resin in the organic insulating layers 106B and 206A can be prevented, thereby making the bonding between the thermosetting resins more reliable. When the surfaces 106e and 206d of the organic insulating layers 106B and 206A are irradiated with ultraviolet rays and surface modified after the grinding process, the heating temperature during the bonding can be reduced and the heating time can be shortened. In this case, the heating temperature when the flattened organic insulating layers 106A and 206A are pressed and bonded to each other can be, for example, set to 300°C or less. In addition, the heating time can be set to within 15 minutes.

[0118] In the lamination process, the pressure applied when the organic insulating layers 106B and 206A flattened in the polishing process are pressed against each other is, for example, 5.0 MPa to 100 MPa. By applying a pressure of 5.0 MPa or more, the organic insulating layers 106B and 206A flattened by CMP can be brought into sufficient contact with each other even if there is an influence of warping, so that sufficient bonding strength can be obtained. By applying a pressure of 100 MPa or less, damage to the substrate flattened by CMP can be prevented.

[0119] In this lamination process, additional heating can be performed under a nitrogen atmosphere as needed after crimping. The heating temperature after crimping is, for example, 250°C to 400°C, and the heating time after crimping is, for example, 30 minutes to 180 minutes. By heating at a temperature above 250°C, the embedded wiring electrodes 105 and 205 can be firmly joined to each other by metal bonding. By setting the heating temperature to below 400°C, the resin components of the organic insulating layers 106B and 206A can be prevented from being decomposed by heat. By this additional heating or heating during crimping, the thermosetting resin in the organic insulating layers 106B and 206A is completely cured. Thus, for example, a stack 1 and a stack 1A are produced.

[0120] The materials of the thermosetting resins constituting the organic insulating layers 106B and 206A bonded in the above bonding process may be the same. In the case of being the same, the bonding strength when bonding the organic insulating layers 106B and 206A can be easily improved. On the other hand, the thermosetting resins constituting the organic insulating layers 106B and 206A bonded in the above bonding process may be different from each other.

[0121] Here, reference Figure 13 to Figure 15 , the effects of the method for producing the laminated body according to the present embodiment will be described. Fig.13 middle, Fig.13 (a) is a cross-sectional view showing a laminated body produced by another production method, Fig.13 (b) is a cross-sectional view showing a laminated body produced by the production method according to this embodiment. Fig.13 In (a), the two insulating layers 106B bonded to each other contain the same amount of inorganic oxide particles 106b. Fig.14 middle, Fig.14 (a)~ Fig.14 (c) is a diagram showing the influence of thermal expansion in another method for producing a laminate and a laminate produced by the method. Fig.15 middle, Fig.15 (a) and Fig.15 (b) is a diagram showing a state of embedding of foreign matter by the production method according to the present embodiment.

[0122] First, refer to Fig.13 , the bonding strength is explained. Fig.13 As shown in (a), when the two insulating layers 106B bonded to each other contain the same amount of inorganic oxide particles 106b, it is considered that although the thermal expansion coefficient based on the thermosetting resin 106a can be reduced, the area of ​​the bonding region in the resin portion such as the thermosetting resin is reduced in the entire laminate 1. That is, the area where the resin portion in one organic insulating layer contacts the cross-sectional portion of the inorganic oxide particles in the other organic insulating layer will increase anyway, and accordingly, the area where the resin portion in one organic insulating layer bonds to the resin portion in the other organic insulating layer will decrease. Therefore, in Fig.13 In the embodiment shown in (a), it may be difficult to further increase the bonding strength in the laminate 1. Fig.13 In the embodiment shown in (b), one of the organic insulating layers 206A does not include inorganic oxide particles (or includes only some inorganic oxide particles). Therefore, the area where the resin portion in one of the organic insulating layers 206A is bonded to the resin portion in the other organic insulating layer 106B can be relatively large. Thus, according to the manufacturing method involved in this embodiment, the bonding strength between the organic insulating layers 106B and 206A can be increased.

[0123] For example, Fig.16 As shown, through Fig.13 In the case of a laminate produced by another production method shown in (a) (Experimental Example 1), the shear strength was 5 MPa or less. Fig.13In the case where a laminate is produced by the production method according to the present embodiment shown in (b) (Experimental Example 2), the shear strength can be set to 15 MPa or more. In Experimental Example 3, the shear strength when organic insulating layers not containing inorganic oxide particles are bonded to each other is shown, but according to the production method according to the present embodiment (Experimental Example 2), it can be confirmed that the same degree of bonding strength as in Experimental Example 3 can be generated. In Experimental Example 2, the organic insulating layers 106B and 206A were irradiated with ultraviolet rays (reference Fig.11 ). In addition, the shear strength when the inorganic insulating layers (silicone substrates) are bonded to each other is, for example, about 15 MPa. According to the present embodiment, it can be confirmed that the same bonding strength can be obtained.

[0124] Next, refer to Fig.14 , the reduction of thermal expansion coefficient is explained. Fig.14 (a) and Fig.14 As shown in (b), in the case of a laminate 401 formed on a supporting substrate 402 and in which no inorganic oxide particles are included in any organic insulating layer 406, Fig.14 As shown in (c), the thermal expansion coefficient of the organic insulating material or its cured product constituting the organic insulating layer 406 and the thermal expansion coefficient of the wiring electrode 405 will be greatly deviated. That is, in the stack 401, the thermal expansion coefficient of the organic insulating material or its cured product constituting the organic insulating layer 406 is large, and the thermal expansion coefficient of the wiring electrode 405 (for example, copper) becomes small. Therefore, when the stack 401 is heated or heated during the manufacturing process, the expansion of the wiring electrode 405 may not keep up with the expansion of the organic insulating material, and the interface adhesion between the wiring electrodes 405 is poor or positional displacement occurs in the organic insulating layer 406 during manufacturing. In contrast, according to the manufacturing method of the stack 1, 1A involved in this embodiment, one of the insulating layers contains inorganic oxide particles, and the thermal expansion coefficient in at least one insulating layer is reduced. Therefore, when the stack 1, 1A generates heat or is heated during the manufacturing process, the expansion of the wiring electrodes 14, 23, 34, 105, 205 cannot keep up with the expansion of the organic insulating material, and the interface adhesion between the wiring electrodes 14, 23, etc. is poor or positional deviation occurs in the organic insulating layer during manufacturing.

[0125] like Fig.13As shown in (a), if inorganic oxide particles are contained in two organic insulating layers, the flexibility of the organic insulating layer in the stack is reduced, and it becomes difficult to bury foreign matter D through the organic insulating layer. In contrast, according to the method for making a stack according to the present embodiment, the other insulating layer does not contain inorganic oxide particles, or the other insulating layer contains only a small amount of inorganic oxide, and has a lower elastic modulus than one of the insulating layers (for example, less than 10 GPa). Therefore, when the stack 1 and 1A are made by lamination, even if dust or the like is generated, such foreign matter can be more reliably contained through the organic insulating layer that does not contain inorganic oxide. As a result, poor connection caused by foreign matter or the like can be reduced.

[0126] As described above, according to the method for manufacturing a laminated body according to the present embodiment, the organic insulating layer 106B includes the thermosetting resin 106a and the inorganic oxide particles 106b, and on the other hand, the organic insulating layer 206A includes the thermosetting resin 206a but does not include the inorganic oxide particles or includes less inorganic oxide particles than the organic insulating layer 106B, and the organic insulating layers 106B and 206A are bonded to each other. In this case, the thermal expansion coefficient of the organic insulating layer 106B is suppressed by the inorganic oxide particles 106b included in the organic insulating layer 106B. On the other hand, by not including the inorganic oxide particles or including less inorganic oxide particles in the organic insulating layer 206A, the organic insulating layer 206A can achieve the burial of debris, the suppression of surface unevenness, and the improvement of the bonding strength between the insulating layers. Therefore, according to the method for manufacturing a laminated body, the positional deviation when bonding the insulating layers can be suppressed, and the bonding strength between the insulating layers can be improved.

[0127] In the method for manufacturing the laminated body according to the present embodiment, the content of the inorganic oxide particles in the organic insulating material constituting the organic insulating layer 206A may be one fifth or less of the content of the inorganic oxide particles 106b included in the organic insulating material constituting the organic insulating layer 106B. In this case, the organic insulating layer 206A can further achieve the burial of debris, the suppression of surface unevenness, and the improvement of the bonding strength between the insulating layers.

[0128] In the method for manufacturing the laminated body according to the present embodiment, the content of inorganic oxide particles in the organic insulating material constituting the organic insulating layer 206A may be 5% by volume or less. In this case, the organic insulating layer 206A can further achieve the embedding of debris, the suppression of surface irregularities, and the improvement of the bonding strength between the insulating layers.

[0129] In the method for manufacturing the laminated body according to this embodiment, the organic insulating material constituting the organic insulating layer 206A preferably does not substantially include inorganic oxide particles. In this case, the organic insulating layer 206A can more reliably achieve the burial of debris, the suppression of surface irregularities, and the improvement of the bonding strength between the insulating layers.

[0130] In the method for making a laminated body according to the present embodiment, the organic insulating material for the organic insulating layer 106B including the thermosetting resin 106a and the inorganic oxide particles 106b is preferably adjusted to have a smaller thermal expansion coefficient than the organic insulating material constituting the organic insulating layer 206A. In this case, the thermal expansion coefficient in the organic insulating layer 106B can be reduced, so the positional offset based on thermal expansion can be suppressed. Thus, a laminated body with high bonding accuracy can be obtained. In addition, when copper (Cu) and other wirings are provided in the laminated body, the expansion of the insulating material including the thermosetting resin and the like may be greater than the expansion of the wiring, and the wiring may not keep up with the expansion of the insulating layer, resulting in poor bonding between the wirings. However, according to the method for making the organic insulating layer 106, the difference in thermal expansion between the insulating material and the wiring can be reduced by lowering the thermal expansion coefficient of the insulating material, and poor bonding between the wirings can be suppressed.

[0131] In the method for producing the laminated body according to the present embodiment, it is preferred that the organic insulating material for the organic insulating layer 106B including the thermosetting resin 106a and the inorganic oxide particles 106b be adjusted to have a thermal expansion coefficient of 40×10 -6 / K or less. In this case, the thermal expansion coefficient in the organic insulating layer 106B can be reduced, so that the positional deviation due to thermal expansion can be suppressed. As a result, a stacked body with high bonding accuracy can be obtained. In addition, when copper (Cu) or other wiring is provided in the stacked body, it may sometimes cause the expansion of the insulating material including thermosetting resin to be greater than the expansion of the wiring, and the wiring cannot keep up with the expansion of the insulating layer, resulting in poor bonding between the wirings. However, according to this manufacturing method, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring can be reduced, and poor bonding between the wirings can be suppressed.

[0132] In the method for making a laminated body according to the present embodiment, the content of the inorganic oxide particles 106b in the insulating material for the organic insulating layer 106B including the thermosetting resin 106a and the inorganic oxide particles 106b is preferably 15% to 70% by volume. In this case, the thermal expansion coefficient in the organic insulating layer 106B can be reduced by including the inorganic oxide particles, so that the positional deviation based on the thermal expansion can be suppressed. Thus, a laminated body with high bonding accuracy can be obtained. In addition, when copper (Cu) and other wirings are provided in the laminated body, the expansion of the insulating material including the thermosetting resin and the like may be greater than the expansion of the wiring, and the wiring may not keep up with the expansion of the insulating layer, resulting in poor bonding between the wirings. However, according to the manufacturing method, by lowering the thermal expansion coefficient of the first insulating material, the difference in thermal expansion between the insulating material and the wiring can be reduced, and poor bonding between the wirings can be suppressed.

[0133] The method for making the laminated body involved in this embodiment also includes a process of grinding the surfaces 106d and 106e of the organic insulating layers 106 and 106A to make them flat. In the process of grinding the organic insulating layers 106 and 106A, the insulating layers can be ground to a surface 106d and 106e with an arithmetic mean roughness of less than 50nm. In the case where the insulating layer includes inorganic oxide particles, the surface roughness may become coarser, but in this production method, one of the organic insulating layers is flattened by grinding or the like before lamination. Thus, the accuracy and bonding strength when the organic insulating layer 106B is bonded to the organic insulating layer 206A can be more reliably improved. As a result, the accuracy and bonding strength when the organic insulating layer 106B and the organic insulating layer 206A are bonded can be more reliably improved.

[0134] In the method for manufacturing the stacked body involved in this embodiment, the support substrate 101 may include an inorganic interposer composed of an inorganic material or an organic interposer composed of an organic material including inorganic oxide particles. In this case, by reducing the thermal expansion coefficient of the insulating layer on the interposer side to reduce the difference in thermal expansion coefficient between the insulating layer and the interposer, it is possible to eliminate the undesirable conditions during the assembly of the package, such as warping, cracks, poor installation, poor terminal connection, poor insulating layer formation, and interface peeling in the interposer. In addition, by reducing the thermal expansion coefficient of the insulating layer on the interposer side to reduce the difference in thermal expansion coefficient between the insulating layer and the interposer, it is possible to eliminate the undesirable conditions of the stacked body (or semiconductor device), such as deformation of the wiring, connection damage, material peeling, wiring short circuit, and material failure.

[0135] In the method for manufacturing the laminated body according to the present embodiment, a semiconductor chip may be mounted on the surface of the organic insulating layer 206A opposite to the surface 206d. In this case, by not including inorganic oxide particles or including a small amount of inorganic oxide particles in the insulating layer on the semiconductor chip side, it is possible to prevent the particles from adhering to the semiconductor chip and causing poor connection.

[0136] The method for manufacturing the stacked body involved in this embodiment may further include: a step of grinding the surfaces 106d and 106e of the organic insulating layers 106 and 106A to make them flat; a step of forming the organic insulating layer 206 including the thermosetting resin 206a on the supporting substrate 201; and a step of grinding the surface 206c of the organic insulating layer 206 to make it flat. In the bonding step, the flattened surface 106e and the flattened surface 206d can be bonded. In the case where the insulating layer includes inorganic oxide particles, the surface roughness may become coarser, but in this manufacturing method, the organic insulating layer is flattened by grinding or the like before bonding. As a result, the bonding strength between the organic insulating layer 106B and the organic insulating layer 206A can be further improved.

[0137] The method for producing the laminated body according to the present embodiment preferably further includes a step of irradiating the surface 206d of the organic insulating layer 206A with ultraviolet rays. In this case, the surface of the resin material constituting the organic insulating layer 206A reacts with the ozone generated by the irradiation with ultraviolet rays, and the surface free energy increases, thereby generating highly reactive functional groups on the surface 206d of the organic insulating layer 206A. In other words, the cured product of the thermosetting resin constituting the organic insulating layer 206A becomes close to the state before curing.

[0138] Thus, the bonding strength between the organic insulating layer 106B and the organic insulating layer 206A can be further improved. In the case of ultraviolet irradiation, unlike plasma treatment, the surface 206d of the organic insulating layer 206A will not be roughened, so it will not hinder the bonding between the organic insulating layer 106B and the organic insulating layer 206A. However, surface treatment using plasma treatment can be performed. In this production method, the bonding between the organic insulating layer 106B and the organic insulating layer 206A is promoted by ultraviolet irradiation as described above, so the heating temperature when bonding the organic insulating layer 106B and the organic insulating layer 206A can be lowered than before or the heating time can be shortened. Thus, the bonding process can be simplified or the influence of heating on the stack (or semiconductor device) can be suppressed.

[0139] In the method for manufacturing the laminate according to the present embodiment, in the step of laminating the organic insulating layer 106B and the organic insulating layer 206A, the organic insulating layer 106B and the organic insulating layer 206A may be laminated by heating them at 300° C. or less. In this case, the influence of heating on the laminate (or semiconductor device) can be suppressed.

[0140] The method for manufacturing the laminated body according to the present embodiment may further include a step of forming a wiring electrode 105 on the supporting substrate 101. In the step of forming the organic insulating layer 106, the wiring electrode 105 may be sealed with an insulating material including a thermosetting resin 106a and inorganic oxide particles 106b. Thus, the wiring electrode 105 is protected by the insulating material.

[0141] The method for manufacturing the laminated body according to the present embodiment may further include: a step of forming the wiring electrode 205 on the support substrate 201; and a step of forming the organic insulating layer 206 on the support substrate 201 so as to seal the wiring electrode 205 with an insulating material including a thermosetting resin 206a. In the laminating step, when the surface 106e of the organic insulating layer 106B and the surface 106d of the organic insulating layer 206A are laminated, the connection terminal of the wiring electrode 105 and the connection terminal of the wiring electrode 205 can be bonded. In this case, the two connection terminals can be bonded more reliably.

[0142] The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments and can be appropriately changed within the scope of the gist thereof. For example, in the above-mentioned embodiment of the method for manufacturing the laminate, the organic insulating layers 106 and 106B contain inorganic oxide particles 106b, and the organic insulating layers 206 and 206A do not contain inorganic oxide particles or contain a trace amount of inorganic oxide particles, but the inorganic oxide particles may be contained in the opposite form. Even in this case, the same effect can be exerted.

[0143] [Explanation of symbols]

[0144] 1, 1A-laminate, 10, 30-first component, 20-second component, 11-intermediate layer substrate, 13, 22, 33, 106, 106B, 206, 206A-insulating layer, 14, 23, 34, 105, 205-wiring electrodes, 21-semiconductor chip, 13a, 22a, 33a-cured material, 13b, 22b, 33b, 106b-inorganic oxide particles, 101, 201-support substrate, 106a, 206a-thermosetting resin, 112, 212-polishing liquid, 120, 220-irradiator.

Claims

1. A method for manufacturing a laminate, comprising: forming a first insulating layer including a first thermosetting resin and first inorganic oxide particles on a first supporting substrate; and a step of laminating the first surface of the first insulating layer and the second surface of the second insulating layer including a second thermosetting resin, The second insulating layer substantially does not include inorganic oxide particles or includes second inorganic oxide particles in a smaller content than the first inorganic oxide particles included in the first insulating layer.

2. The method for producing a laminate according to claim 1, wherein: The content of the second inorganic oxide particles in the second insulating material constituting the second insulating layer is one fifth or less of the content of the first inorganic oxide particles included in the first insulating material constituting the first insulating layer.

3. The method for producing a laminate according to claim 1 or 2, wherein: The content of the second inorganic oxide particles in the second insulating material constituting the second insulating layer is 5 volume % or less.

4. The method for producing a laminate according to claim 1, wherein: The second insulating material constituting the second insulating layer substantially does not include inorganic oxide particles.

5. The method for producing a laminate according to any one of claims 1 to 4, wherein: The first insulating material including the first thermosetting resin and the first inorganic oxide particles is adjusted to have a smaller thermal expansion coefficient than the second insulating material constituting the second insulating layer.

6. The method for producing a laminate according to any one of claims 1 to 5, wherein: The first insulating material including the first thermosetting resin and the first inorganic oxide particles is adjusted to have a thermal expansion coefficient of 40×10 -6 / K or less.

7. The method for producing a laminate according to any one of claims 1 to 6, wherein: The content of the first inorganic oxide particles in the first insulating material including the first thermosetting resin and the first inorganic oxide particles is 15 volume % to 70 volume %.

8. The method for producing a laminate according to any one of claims 1 to 7, further comprising: a step of planarizing the first surface of the first insulating layer, In the step of planarizing the first insulating layer, the first insulating layer is polished so that an arithmetic mean roughness of the first surface becomes 50 nm or less.

9. The method for producing a laminate according to any one of claims 1 to 8, wherein: The first support substrate includes an inorganic interposer made of an inorganic material or an organic interposer made of an organic material including inorganic oxide particles.

10. The method for producing a laminate according to any one of claims 1 to 9, wherein: A semiconductor chip is mounted on a surface of the second insulating layer opposite to the second surface.

11. The method for producing a laminate according to any one of claims 1 to 10, further comprising: A step of planarizing the first surface of the first insulating layer; forming the second insulating layer including the second thermosetting resin on a second supporting substrate; and a step of flattening the second surface of the second insulating layer, In the bonding step, the planarized first surface and the planarized second surface are bonded together.

12. The method for producing a laminate according to any one of claims 1 to 11, further comprising: a step of irradiating the second surface of the second insulating layer with ultraviolet rays.

13. The method for producing a laminate according to any one of claims 1 to 12, wherein: In the step of bonding the first surface and the second surface together, the first insulating layer and the second insulating layer are heated at 250° C. or less to bond them together.

14. The method for producing a laminate according to any one of claims 1 to 13, further comprising: forming a first wiring electrode on the first supporting substrate, In the step of forming the first insulating layer, the first wiring electrode is sealed with a first insulating material including the first thermosetting resin and the first inorganic oxide particles.

15. The method for manufacturing a laminate according to claim 14, further comprising: forming a second wiring electrode on a second supporting substrate; and forming the second insulating layer on the second supporting substrate so that the second wiring electrode is sealed with a second insulating material including the second thermosetting resin, In the bonding step, when the first surface of the first insulating layer and the second surface of the second insulating layer are bonded together, the connection terminal of the first wiring electrode and the connection terminal of the second wiring electrode are bonded together.

16. An insulating material used in a method for producing a laminate, the method comprising: forming a first insulating layer on a first supporting substrate using an insulating material including a first thermosetting resin and first inorganic oxide particles; and a step of laminating the first surface of the first insulating layer and the second surface of the second insulating layer including a second thermosetting resin, The second insulating layer substantially does not include inorganic oxide particles or includes second inorganic oxide particles in a smaller content than the first inorganic oxide particles included in the first insulating layer.

17. The insulating material according to claim 16, wherein The insulating material is adjusted to have a linear expansion coefficient of 40×10 -6 / K or less.

18. The insulating material according to claim 16 or 17, wherein: The content of the first inorganic oxide particles in the insulating material is 15 volume % to 70 volume %.

19. An insulating material used in a method for producing a laminate, the method comprising: forming a first insulating layer including a first thermosetting resin and first inorganic oxide particles on a first supporting substrate; and a step of bonding the first surface of the first insulating layer and the second surface of the second insulating layer formed of an insulating material including a second thermosetting resin, The second insulating layer substantially does not include inorganic oxide particles or includes second inorganic oxide particles in a smaller content than the first inorganic oxide particles included in the first insulating layer.

20. The insulating material according to claim 19, wherein The insulating material has an elastic modulus lower than that of a material constituting the first insulating layer when heated to at least 300°C.

21. The insulating material according to claim 19 or 20, wherein: The content of the second inorganic oxide particles in the insulating material is 5 volume % or less.

22. A laminate comprising: a first supporting substrate; a first insulating layer including a cured product of a first thermosetting resin and first inorganic oxide particles, and formed on the first supporting substrate; and The second insulating layer includes a cured product of a second thermosetting resin and is bonded to the first insulating layer. The second insulating layer substantially does not include inorganic oxide particles or includes second inorganic oxide particles in a smaller content than the first inorganic oxide particles included in the first insulating layer.

23. The laminate according to claim 22, wherein: The content of the second inorganic oxide particles in the second insulating layer is 5 volume % or less.

24. The laminate according to claim 22 or 23, further comprising: The semiconductor chip is arranged on a surface of the second insulating layer opposite to the surface bonded to the first insulating layer.

25. The laminate according to any one of claims 22 to 24, wherein The content of the first inorganic oxide particles in the first insulating layer is 15 volume % to 70 volume %.

26. The laminate according to any one of claims 22 to 25, further comprising: a first wiring electrode, at least a portion of which is disposed in the first insulating layer, and a connection terminal is exposed from a first surface of the first insulating layer that is in contact with the second insulating layer; and The second wiring electrode is at least partially disposed in the second insulating layer, and the connection terminal is exposed from a second surface of the second insulating layer that is in contact with the first insulating layer. The connection terminal of the first wiring electrode and the connection terminal of the second wiring electrode are joined.

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