Micro-integrated temperature control heating semiconductor laser diode and manufacturing method thereof

Abstract

The invention provides a micro-integrated temperature control heating semiconductor laser diode and a manufacturing method thereof, which are used for solving the technical problems of lower temperature control precision, more combined devices, higher difficulty of a packaging process and higher cost in the conventional packaged laser diode. The invention provides a micro-integrated temperature-control heating semiconductor laser diode which can accurately control the temperature, is low in cost and can simplify the packaging process, the micro-integrated temperature-control heating semiconductor laser diode comprises a laser chip, the laser chip sequentially comprises a substrate, a first buffer layer, an active layer, a second buffer layer and a passivation layer from bottom to top, and the back surface of the substrate is provided with a negative electrode; two grooves are etched on the passivation layer, and a ridge strip between the two grooves forms a waveguide; and a heating resistor and a thermistor are respectively arranged on two sides of the two grooves. A heating function and a temperature measuring function are integrated on the semiconductor laser by adopting a micro-integration technology, so that the number of used devices is effectively reduced, the packaging volume is reduced, the packaging procedure is simplified, and the packaging cost of the devices is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of lasers, and in particular to a semiconductor laser diode and a manufacturing method thereof. Background Art

[0002] Lasers are widely used in optical communications, laser gas detection, vehicle-mounted radar, laser medical treatment and other industries. In laser applications, they are often used in different ambient temperatures, even in low temperatures; and the temperature will directly change the laser's wavelength, threshold current, optical efficiency, etc. Therefore, it is necessary to control the laser at a specific temperature in laser applications.

[0003] In response to the above problems, semiconductor heating and cooling devices (TEC) or heating packaged lasers are currently used in the market. TEC (semiconductor heating and cooling device) + NTC (temperature measuring device) are used to control the temperature of the laser and achieve constant temperature operation of the laser to solve the wavelength drift and unstable performance caused by temperature changes. However, due to the relatively large size of the heating and cooling device (TEC) and the temperature measuring device (NTC), these two solutions cannot be placed in the position required for accurate temperature control during mounting, resulting in a deviation between the actual temperature of the laser light-emitting area and the NTC detection temperature.

[0004] The invention patent with application number 202311634930.8 discloses a TO packaging device that uses a heating resistor instead of a TEC, including: an aluminum nitride ceramic substrate, a thermistor, a laser chip, a heating resistor and a package shell base; the thermistor and the laser chip are mounted on the aluminum nitride ceramic substrate; the aluminum nitride ceramic substrate is integrated with a heating resistor; the thermistor, the laser chip and the heating resistor are connected by electrical signals; the aluminum nitride ceramic substrate is arranged at the upper end of the package shell base. The above device uses a heating resistor to replace a micro-thermoelectric cooler to heat the laser chip, which also plays a role in stabilizing the central wavelength of the laser chip. The heating resistor is inexpensive and can be directly integrated on the aluminum nitride ceramic substrate, which solves the problems of high production cost and complex production process caused by the solution of using a micro-thermoelectric cooler in the prior art. However, the thermistor and the laser chip in the above patent are mounted on the aluminum nitride ceramic substrate. The two devices have a height and distance difference, which will cause delays and lags in temperature control accuracy, and then lead to the problem of low accuracy in temperature control. Summary of the invention

[0005] In response to the technical problems of low temperature control accuracy, large number of combined devices, difficult packaging process and high cost in existing packaged laser diodes, the present invention proposes a micro-integrated temperature-controlled heating semiconductor laser diode and a manufacturing method thereof which can accurately control temperature, has low cost and can simplify the packaging process.

[0006] In order to achieve the above object, the technical solution of the present invention is implemented as follows: a method for manufacturing a micro-integrated temperature-controlled heating semiconductor laser diode, the steps of which are: Step 1: epitaxially growing a first buffer layer, an active layer, and a second buffer layer on a semiconductor substrate in sequence to form a laser wafer; Step 2: Etching on the laser wafer to form an optical waveguide and a laser diode structure; Step 3: growing a passivation layer on the laser diode structure; Step 4: forming a thermistor lift-off pattern on the passivation layer by photolithography once; Step 5: depositing a titanium metal film and a platinum film layer on the thermocouple stripping pattern in sequence to form a platinum thermistor layer, and stripping the thermistor layer; Step 6: forming a heating resistor lift-off pattern on the passivation layer by photolithography once; Step 7: depositing a titanium metal film and a chromium metal film in sequence on the heating resistor peeling pattern to form a heating resistor layer, and peeling off the heating resistor layer; Step 8: Opening a laser diode electrode contact window in the passivation layer; Step 9: Forming an electrode metal layer (titanium, platinum, gold) lift-off pattern on the laser diode obtained in step 8 by one-time photolithography; Step 10: depositing titanium, platinum and gold metal films in sequence on the electrode metal layer stripping pattern to form an electrode metal layer, and stripping the electrode metal layer; Step 11: After thinning the substrate, a negative electrode is fabricated on the back side of the substrate to complete the fabrication of the integrated temperature-controlled heating laser diode.

[0007] Preferably, the thermistor layer is a thermistor, the heating resistor layer is a heating resistor, and the electrode metal layer is a laser positive electrode; the thermistor layer and the heating resistor layer are each provided with a layer of gold metal film layer on top, and the gold metal film layer serves as a heating resistor pad and a thermistor pad, respectively.

[0008] Preferably, the number of the heating resistor pad and the thermistor pad is two, respectively used to connect to external devices; The heating resistor and the thermistor are both completed by photolithography in the laser chip manufacturing process; The heating resistor pad, thermistor pad and laser positive electrode are completed at one time in the laser chip manufacturing process.

[0009] A micro-integrated temperature-controlled heating semiconductor laser diode comprises a laser chip, which comprises a substrate, a first buffer layer, an active layer, a second buffer layer and a passivation layer from bottom to top, and a cathode electrode is arranged on the back of the substrate; two grooves are etched on the passivation layer, and a ridge between the two grooves forms a waveguide; a heating resistor and a thermistor are arranged on both sides of the two grooves respectively.

[0010] Preferably, the heating resistor is arranged on the passivation layer and is located on one side of the ridge and extends along the ridge. The length of the heating resistor is 80% of the length of the ridge, and both ends of the heating resistor have positive and negative electrode areas, namely, heating resistor pads. The thermistor is arranged on the passivation layer and is located on the other side of the ridge, and extends along the ridge direction and is distributed along the ridge. The thermistor has a bent positive and negative electrode area, namely, a thermistor pad.

[0011] Preferably, the thermistor is etched on the passivation layer by photolithography, and the heating resistor is etched on the passivation layer by photolithography; the thermistor pad and the heating resistor pad are covered with a gold layer.

[0012] Preferably, the material of the thermistor is platinum; The material of the heating resistor is titanium, chromium or tantalum nitride; Metal material is etched inside the heating resistor and the thermistor.

[0013] The heating resistor and the thermistor are in the same plane.

[0014] Preferably, a micro-integrated temperature-controlled heated semiconductor laser diode comprises a chip bonding area, a gold-tin pad is arranged on the chip bonding area, polarity pads are arranged on both sides of the gold-tin pad, and the polarity pads are used to connect to external equipment; the gold-tin pad and the polarity pad are arranged on a silicon dioxide or silicon nitride layer, a heating resistor / thermistor is deposited in the silicon dioxide or silicon nitride layer, and the heating resistor / thermistor is connected to the polarity pad; the silicon dioxide or silicon nitride layer is arranged on an aluminum nitride substrate.

[0015] Preferably, the heating resistor / thermistor can be used as both a thermistor and a heating resistor, and the polarity pad includes a negative electrode pad and a positive electrode pad, the negative electrode pad and the positive electrode pad are respectively located on both sides of the gold-tin pad, and the negative electrode pad and the positive electrode pad are respectively connected to the two ends of the heating resistor / thermistor.

[0016] Preferably, the preparation method comprises the following steps: Step 1: forming a thermocouple lift-off pattern on an aluminum nitride substrate by one-time photolithography; Step 2: depositing titanium and platinum metal films on the aluminum nitride substrate in sequence to form a platinum thermocouple / resistor layer, and peeling off the thermocouple / resistor layer; Step 3: growing a silicon dioxide or silicon nitride layer on the aluminum nitride substrate; Step 4: forming an electrode lift-off pattern and a bonding area lift-off pattern on the silicon dioxide or silicon nitride layer by photolithography; Step 5: depositing titanium, platinum and gold metal films on the silicon dioxide or silicon nitride layer in sequence to form electrodes and bonding areas, and peeling off the titanium, platinum and gold metal films; Step 6: forming a bonding area peeling pattern on the aluminum nitride substrate by photolithography; Step 7: depositing a gold-tin solder layer on the bonding area of ​​the aluminum nitride substrate, and peeling off the gold-tin solder layer; Step 8: Cutting the carrier wafer composed of the aluminum nitride substrate and the thermocouple / resistor layer into a single laser diode carrier; Step 9: forming a eutectic semiconductor laser diode on the bonding region to complete the manufacturing of the integrated temperature-controlled heating laser diode; The heating resistor / thermistor is completed by photolithography and metal stripping; The heating resistor / thermistor and the gold-tin solder pad are isolated by a silicon dioxide or silicon nitride layer; The laser diode has a positive electrode on its surface and a metal negative electrode on its back; The metal negative electrode of the laser diode is soldered to a gold-tin pad on the silicon dioxide or silicon nitride layer.

[0017] Compared with the prior art, the present invention has the following beneficial effects: the present invention uses micro-integration technology to integrate the heating function and the temperature measurement function into a semiconductor laser, effectively reducing the number of devices used, reducing the packaging volume, simplifying the packaging procedure and the device packaging cost. The heating resistor and the thermistor of the present invention are integrated on the laser chip and distributed on both sides of the ridge of the laser chip, so the thermistor can directly sense the temperature of the laser chip, avoiding the temperature difference between the heating resistor and the thermistor, and controlling the temperature more accurately. Through the above design, the present invention can not only accurately control and sense the temperature of the laser chip, but also integrate the heating resistor, thermistor and the semiconductor laser diode into one, greatly reducing the space and reducing the device and assembly costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1It is a schematic diagram of the top view of the structure of Example 1 and Example 2 of the present invention.

[0020] Figure 2 for Figure 1 The cross-sectional view along the a-a' direction is shown.

[0021] Figure 3 for Figure 1 The cross-sectional view along the b-b' direction is shown.

[0022] Figure 4 It is a top view of embodiment 3 of the present invention.

[0023] Figure 5 for Figure 4 Top view of the .

[0024] Figure 6 for Figure 5 Center AA view.

[0025] In the figure, 1 is the negative electrode, 2 is the substrate, 3 is the first buffer layer, 4 is the active layer, 5 is the buffer layer, 6 is the passivation layer, 7 is the heating resistor pad, 8 is the thermistor pad, 9 is the laser positive electrode, 10 is the groove, 11 is the waveguide, 12 is the heating resistor, and 13 is the thermistor. 21 is the negative electrode pad; 22 is the positive electrode pad; 23 is the chip bonding area; 24 is the heating resistor / thermistor; 25 is the gold-tin pad; 26 is the aluminum nitride substrate, and 27 is the silicon dioxide or silicon nitride layer. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] Example 1 like Figure 2 and Figure 3 As shown, a method for manufacturing a micro-integrated temperature-controlled heating semiconductor laser diode, the steps are: Step 1: epitaxially grow a first buffer layer 3, an active layer 4, and a second buffer layer 5 in sequence on a semiconductor substrate 2 to form a laser wafer.

[0028] Step 2: Etching on the laser wafer to form an optical waveguide and a laser diode structure.

[0029] Step 3: growing a passivation layer 6 on the laser diode structure.

[0030] Step 4: forming a thermistor lift-off pattern on the passivation layer 6 by photolithography.

[0031] Step 5: depositing a titanium metal film and a platinum film layer on the thermocouple stripping pattern in sequence to form a platinum thermistor layer and a stripping thermistor layer.

[0032] Step 6: forming a heating resistor lift-off pattern on the passivation layer 6 by photolithography.

[0033] Step 7: depositing a titanium metal film and a chromium metal film in sequence on the heating resistor peeling pattern to form a heating resistor layer, and peeling off the heating resistor layer.

[0034] The titanium metal film layer and the chromium metal film layer together form a heating resistor layer to obtain a heating resistor 12, but there is also a gold metal film layer on the top of the heating resistor layer, which serves as a heating resistor pad 7. There are two heating resistor pads 7, which are used to connect to external devices respectively.

[0035] The heating resistor 12 and the thermistor 13 are both completed by photolithography in the laser chip manufacturing process, which can greatly simplify the process and reduce costs.

[0036] Step 8: Opening a laser diode electrode contact window in the passivation layer 6 .

[0037] Step 9: Form an electrode metal layer peeling pattern on the laser diode obtained in step 8 by one photolithography.

[0038] Step 10: deposit titanium, platinum and gold metal films in sequence on the electrode metal layer stripping pattern to form an electrode metal layer, and then strip the electrode metal layer.

[0039] The heating resistor pad 7, the thermistor pad 8, and the laser positive electrode 9 are completed at one time in the laser chip manufacturing process, which can greatly simplify the process and reduce the cost.

[0040] Step 11: After thinning the substrate 2, a negative electrode 1 is manufactured on the back side thereof, thereby completing the manufacture of the integrated temperature-controlled heating laser diode.

[0041] Example 2 A micro-integrated temperature-controlled heated semiconductor laser diode comprises a laser chip, wherein the laser chip comprises, from bottom to top, a substrate 2, a first buffer layer 3, an active layer 4, a second buffer layer 5 and a passivation layer 6. A cathode electrode 1 is provided on the back of the substrate 2. In this embodiment, the epitaxial structure of a conventional laser diode can be applied to the cathode electrode 1, the substrate 2, the first buffer layer 3, the active layer 4, the second buffer layer 5 and the passivation layer 6 of this embodiment.

[0042] Conventional laser diode waveguide structures can be applied to this embodiment. For example, Figure 2 As shown, two grooves 10 are etched on the front side of the epitaxial structure, and a waveguide 11 is formed between the two grooves 10. The waveguide 11 is a ridge and is used for emitting light.

[0043] In this embodiment, the heating resistor 12 is arranged on the passivation layer 6, on one side of the ridge, and extends along the ridge direction. The resistance value is determined according to the length, width and height. The length is approximately 80% of the length of the ridge, and both ends have positive and negative electrode areas, namely heating resistor pads 7; the heating resistor 12 is made of titanium, chromium or tantalum nitride, etc.

[0044] On the other side of the ridge, the thermistor 13 is disposed on the passivation layer 6 and extends in the direction of the ridge. The thermistor is distributed along the ridge. The resistance of the thermistor is determined according to the length, width, and height. The thermistor 13 has a bent positive and negative electrode area (thermistor pad 8). The thermistor 13 is covered with a gold layer for wire bonding. The material of the thermistor 13 is platinum or other materials. The thermistor 13 is etched on the passivation layer 6 by photolithography.

[0045] Furthermore, the heating resistor 12 and thermistor 13 are internally etched with metal materials, which are generated before etching. Different sizes are customized according to different resistance designs, and an insulating layer is covered on them, and a gold layer is covered on the positive and negative electrodes for wire bonding. The heating resistor 12 is etched on the passivation layer 6 by photolithography.

[0046] Furthermore, the heating resistor 12 and thermistor 13 are distributed on both sides of the ridge; It should be noted that the heating resistor 12 and the thermistor 13 are in the same plane, so the temperature sensed by the thermistor 13 is almost synchronized with the temperature of the laser chip itself, which can keep the temperature of the thermistor 13 and the laser chip highly consistent to the greatest extent.

[0047] Furthermore, a conventional laser diode, a heating resistor 12 and a thermistor 13 are integrated on the passivation layer 6 by photolithography. A conventional laser diode does not have a heating resistor 12 and a thermistor 13.

[0048] The working principle of this embodiment is: the laser chip is heated by the heating resistor 12, the temperature of the laser chip is detected in real time by the thermistor 13, and the current and voltage of the heating resistor 12 are regulated according to the feedback of the thermistor 13 to ensure that the laser chip is stabilized at the controlled temperature.

[0049] Example 3 like Figure 4 , Figure 5 , Figure 6As shown, a micro-integrated temperature-controlled heating semiconductor laser diode includes a chip bonding area 23; a gold-tin pad 25 is arranged on the chip bonding area 23, and polarity pads are arranged on both sides of the gold-tin pad 25, and the polarity pads are used to connect with external equipment; the gold-tin pad 25 and the polarity pad are arranged on a silicon dioxide or silicon nitride layer 27, and the silicon dioxide or silicon nitride layer 27 is a passivation layer, and a heating resistor / thermistor 24 is deposited in the silicon dioxide or silicon nitride layer 27, and the heating resistor / thermistor 24 can be used as a thermistor or a heating resistor, and the heating resistor / thermistor 24 is connected to the polarity pad; the polarity pad includes a negative electrode pad 21 and a positive electrode pad 22, and the negative electrode pad 21 and the positive electrode pad 22 are respectively located on both sides of the gold-tin pad 25, and the negative electrode pad 21 and the positive electrode pad 22 are respectively connected to the two ends of the heating resistor / thermistor 24. A silicon dioxide or silicon nitride layer 27 is provided on the aluminum nitride substrate 26 .

[0050] Its preparation method is: Step 1: forming a thermocouple lift-off pattern on an aluminum nitride substrate by photolithography once; Step 2: deposit titanium and platinum metal films on the aluminum nitride substrate in sequence to form a platinum thermocouple / resistor layer, and peel off the thermocouple / resistor layer; the heating resistor / thermistor is deposited on the aluminum nitride substrate 26. The heating resistor / thermistor has two pads. The heating resistor / thermistor is completed by photolithography and metal stripping. The thermistor / thermistor is made of platinum metal.

[0051] In this alternative solution, 24 is a heating resistor / thermistor, which can be used as a heating resistor to heat the chip, and can also be used as a thermistor to measure resistance, thereby achieving the result of feedback temperature.

[0052] Step 3: growing a passivation layer on the aluminum nitride substrate; Step 4: forming an electrode peeling pattern and a bonding area peeling pattern on the passivation layer by photolithography; Step 5: Sequentially deposit titanium, platinum, and gold metal films on the passivation layer to form electrodes and bonding areas. Stripping titanium, platinum, and gold metals Step 6: forming a bonding area peeling pattern on the aluminum nitride substrate by photolithography; Step 7: depositing a gold-tin solder layer on the bonding area of ​​the aluminum nitride substrate, and stripping the gold-tin solder; A gold-tin pad is provided on the passivation layer, and the heating resistor / thermistor is isolated from the gold-tin pad by a passivation layer.

[0053] Step 8: Cutting the carrier wafer (aluminum nitride substrate + thermocouple + resistor layer) into a single laser diode carrier; Step 9: forming a eutectic semiconductor laser diode on the bonding area 23. The integrated temperature-controlled heating laser diode is manufactured; The laser diode has a positive electrode on its surface.

[0054] The laser diode has a metallic negative electrode on the back side.

[0055] The metal negative electrode of the laser diode is soldered to a gold-tin pad on the passivation layer.

[0056] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for manufacturing a micro-integrated temperature-controlled heating semiconductor laser diode, characterized in that: The steps are: Step 1: epitaxially growing a first buffer layer (3), an active layer (4), and a second buffer layer (5) in sequence on a semiconductor substrate (2) to form a laser wafer; Step 2: Etching on the laser wafer to form an optical waveguide and a laser diode structure; Step 3: growing a passivation layer (6) on the laser diode structure; Step 4: forming a thermistor lift-off pattern on the passivation layer (6) by photolithography once; Step 5: depositing a titanium metal film and a platinum film layer on the thermocouple stripping pattern in sequence to form a platinum thermistor layer, and stripping the thermistor layer; Step 6: forming a heating resistor lift-off pattern on the passivation layer (6) by photolithography once; Step 7: depositing a titanium metal film and a chromium metal film in sequence on the heating resistor peeling pattern to form a heating resistor layer, and peeling off the heating resistor layer; Step 8: Opening a laser diode electrode contact window in the passivation layer (6); Step 9: forming an electrode metal layer peeling pattern on the laser diode obtained in step 8 by photolithography once; Step 10: depositing titanium, platinum and gold metal films in sequence on the electrode metal layer stripping pattern to form an electrode metal layer, and stripping the electrode metal layer; Step 11: After thinning the substrate (2), a negative electrode (1) is manufactured on the back side of the substrate (2), thereby completing the manufacture of the integrated temperature-controlled heating laser diode.

2. The method for manufacturing a micro-integrated temperature-controlled heating semiconductor laser diode according to claim 1, characterized in that: The thermistor layer is a thermistor (13), the heating resistor layer is a heating resistor (12), and the electrode metal layer is a laser positive electrode (9); the thermistor layer and the heating resistor layer are both provided with a gold metal film layer at the top, and the gold metal film layer serves as a heating resistor pad (7) and a thermistor pad (8), respectively.

3. The method for manufacturing a micro-integrated temperature-controlled heating semiconductor laser diode according to claim 2, characterized in that: The number of the heating resistor pad (7) and the thermistor pad (8) is two, respectively used to be connected to external devices; The heating resistor (12) and the thermistor (13) are both completed by photolithography in the laser chip manufacturing process; The heating resistor pad (7), the thermistor pad (8), and the laser positive electrode (9) are completed at one time in the laser chip manufacturing process.

4. A micro-integrated temperature-controlled heating semiconductor laser diode, characterized in that: The laser chip comprises a substrate (2), a first buffer layer (3), an active layer (4), a second buffer layer (5) and a passivation layer (6) in order from bottom to top, wherein a negative electrode (1) is provided on the back side of the substrate (2); two grooves (10) are etched on the passivation layer (6); a ridge between the two grooves (10) forms a waveguide (11); and a heating resistor (12) and a thermistor (13) are provided on both sides of the two grooves (10), respectively.

5. The micro-integrated temperature-controlled heating semiconductor laser diode according to claim 4, characterized in that: The heating resistor (12) is arranged on the passivation layer (6) and is located on one side of the ridge and extends in the direction of the ridge. The length of the heating resistor (12) is 80% of the length of the ridge, and both ends of the heating resistor (12) have positive and negative electrode areas, namely, heating resistor pads (7). The thermistor (13) is arranged on the passivation layer (6) and is located on the other side of the ridge, and extends in the direction of the ridge and is distributed along the ridge. The thermistor (13) has a bent positive and negative electrode area, namely a thermistor pad (8).

6. The micro-integrated temperature-controlled heating semiconductor laser diode according to claim 4 or 5, characterized in that: The thermistor (13) is etched on the passivation layer (6) by photolithography, and the heating resistor (12) is etched on the passivation layer (6) by photolithography; the thermistor pad (8) and the heating resistor pad (7) are covered with a gold layer.

7. The micro-integrated temperature-controlled heating semiconductor laser diode according to claim 6, characterized in that: The material of the thermistor (13) is platinum; The material of the heating resistor (12) is titanium, chromium or tantalum nitride; Metal material is etched inside the heating resistor (12) and the thermistor (13); The heating resistor (12) and the thermistor (13) are in the same plane.

8. A micro-integrated temperature-controlled heating semiconductor laser diode, characterized in that: The invention comprises a chip bonding area (23), a gold-tin pad (25) is arranged on the chip bonding area (23), polarity pads are arranged on both sides of the gold-tin pad (25), and the polarity pads are used to connect with external equipment; the gold-tin pad (25) and the polarity pad are arranged on a silicon dioxide or silicon nitride layer (27), a heating resistor / thermistor (24) is deposited in the silicon dioxide or silicon nitride layer (27), and the heating resistor / thermistor (24) is connected to the polarity pad; the silicon dioxide or silicon nitride layer (27) is arranged on an aluminum nitride substrate (26).

9. The micro-integrated temperature-controlled heating semiconductor laser diode according to claim 8, characterized in that: The heating resistor / thermistor (24) can be used as a thermistor or a heating resistor. The polarity pads include a negative electrode pad (21) and a positive electrode pad (22). The negative electrode pad (21) and the positive electrode pad (22) are respectively located on both sides of the gold-tin pad (25). The negative electrode pad (21) and the positive electrode pad (22) are respectively connected to two ends of the heating resistor / thermistor (24).

10. The micro-integrated temperature-controlled heating semiconductor laser diode according to claim 8 or 9, characterized in that: The steps of its preparation method are: Step 1: forming a thermocouple lift-off pattern on an aluminum nitride substrate by one-time photolithography; Step 2: depositing titanium and platinum metal films on the aluminum nitride substrate in sequence to form a platinum thermocouple / resistor layer, and peeling off the thermocouple / resistor layer; Step 3: growing a silicon dioxide or silicon nitride layer on the aluminum nitride substrate; Step 4: forming an electrode lift-off pattern and a bonding area lift-off pattern on the silicon dioxide or silicon nitride layer by photolithography; Step 5: depositing titanium, platinum and gold metal films on the silicon dioxide or silicon nitride layer in sequence to form electrodes and bonding areas, and peeling off the titanium, platinum and gold metal films; Step 6: forming a bonding area peeling pattern on the aluminum nitride substrate by photolithography; Step 7: depositing a gold-tin solder layer on the bonding area of ​​the aluminum nitride substrate, and peeling off the gold-tin solder layer; Step 8: Cutting the carrier wafer composed of the aluminum nitride substrate and the thermocouple / resistor layer into a single laser diode carrier; Step 9: forming a eutectic semiconductor laser diode on the bonding region to complete the manufacturing of the integrated temperature-controlled heating laser diode; The heating resistor / thermistor is completed by photolithography and metal stripping; The heating resistor / thermistor and the gold-tin solder pad are isolated by a silicon dioxide or silicon nitride layer; The laser diode has a positive electrode on its surface and a metal negative electrode on its back; The metal negative electrode of the laser diode is soldered to a gold-tin pad on the silicon dioxide or silicon nitride layer.

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