Self-adaptive energy adjustment ion source injection device

Abstract

The utility model relates to the technical field of ion implantation, in particular to a self-adaptive energy regulation ion source implantation device, which comprises an ion source, an analysis structure and an energy regulation structure, a vacuum cavity is arranged in the ion source, an extraction assembly is arranged on the outer edge of the ion source, and the extraction assembly is communicated with the vacuum cavity; the analysis structure is connected to the extraction assembly, a screening cavity and an analysis magnetic field are arranged in the analysis structure, the analysis magnetic field wraps the screening cavity, and the end, away from the extraction assembly, of the analysis structure is connected with a connecting piece; the energy adjusting structure is communicated with the connecting piece and comprises an accelerating column and a scanning disk, an adjusting assembly and a focusing assembly are sequentially arranged in the accelerating column, a target table is connected to the end, away from the connecting piece, of the energy adjusting structure, a parameter adjusting structure is arranged in the target table, and the parameter adjusting structure wraps the target table and is electrically connected to the energy adjusting structure. The utility model aims to improve the precision of ion beam energy adjustment so as to accurately process the surfaces of different materials.

Description

Technical Field

[0001] The utility model relates to the technical field of ion implantation, in particular to an ion source implantation device with self-adaptive energy regulation. Background Art

[0002] The adaptive energy-regulated ion source implantation device is a device used for material surface modification and coating preparation. It can achieve precise processing of the material surface by controlling the energy and injection speed of ions. In order to achieve the function, ion implantation technology and ion beam modulation technology are required. Ion implantation technology uses ion beams to directly implant into the material surface, while ion beam modulation technology achieves precise control of the ion implantation process by adjusting the energy density of the ion beam to meet the processing requirements of different materials.

[0003] In the related technology, after the ion source generates ions, the ions are given an initial velocity through heating and the movement of the ions themselves. The moving ions will enter the magnetic analyzer, which will screen out ions whose speed and mass meet the standards. The compliant ions will pass through the magnetic analyzer and enter the acceleration column for acceleration to meet the needs of material processing. The acceleration column forms an electric field between the electrodes to accelerate the ions, and a scanning disk is set to control the density of the ions to achieve the effect of adjusting the energy of the ion source.

[0004] However, adjusting the ion source energy only by adjusting the rotation speed of the scanning disk has great limitations. The scanning disk can only adjust the number of ions in a section of the ion beam, but the energy distribution and energy intensity of the ion beam cannot be accurately adjusted. This makes it difficult to perform adaptive energy adjustment of the ion beam and is difficult to meet the needs of processing different materials. Utility Model Content

[0005] The main purpose of the utility model is to provide an ion source implantation device with adaptive energy regulation, aiming to improve the accuracy of ion beam energy regulation so as to accurately process the surfaces of different materials.

[0006] To achieve the above-mentioned purpose, the utility model proposes an ion source implantation device with adaptive energy regulation, comprising an ion source, an analysis structure and an energy regulation structure:

[0007] A vacuum chamber is provided in the ion source, a target block is provided in the vacuum chamber, a heating component is provided between the target block and the vacuum chamber, an extraction component is provided at the outer edge of the ion source, and the extraction component is connected to the vacuum chamber;

[0008] The analysis structure is connected to the extraction component, a screening cavity and an analysis magnetic field are provided in the analysis structure, the analysis magnetic field surrounds the screening cavity, and a connector is connected to one end of the analysis structure away from the extraction component; and

[0009] The energy regulating structure is connected to the connecting piece, and the energy regulating structure includes an acceleration column and a scanning disk. The acceleration column is provided with an adjustment component and a focusing component in sequence. The end of the energy regulating structure away from the connecting piece is connected to a target table. A parameter regulating structure is provided in the target table. The parameter regulating structure is wrapped around the target table and electrically connected to the energy regulating structure.

[0010] In one embodiment of the present application, the acceleration column includes a plate and a gap:

[0011] There are at least two groups of electrode plates, the two groups of electrode plates are arranged opposite to each other, the two groups of electrode plates are sandwiched to form an acceleration field, and the acceleration field is arranged directly opposite to the connecting member; and

[0012] The gap is arranged between adjacent pole plates, the adjustment component and the focusing component are surrounded by the gap, the adjustment component is connected to one end of the gap close to the connecting piece, the focusing component is connected to one end of the gap away from the connecting piece, and the adjustment component is connected to the focusing component.

[0013] In one embodiment of the present application, the adjustment component includes a limiting housing and an adjustment magnetic pole:

[0014] The limiting shell surrounds the gap, and a limiting track is arranged in the limiting shell; and

[0015] The adjusting magnetic pole is slidably connected to the limiting track, a driving component is provided between the limiting shell and the adjusting magnetic pole, the driving component is connected to the limiting shell and drivingly connected to the adjusting magnetic pole, the adjusting magnetic pole is provided with two groups, and the two adjusting magnetic poles are arranged opposite to each other.

[0016] In one embodiment of the present application, the adjustment component includes a Y-axis adjustment part and a Z-axis adjustment part, the Y-axis adjustment part is connected to the Z-axis adjustment part, the Y-axis adjustment part is provided with at least two groups, the two groups of Y-axis adjustment parts are connected to each other, and the Z-axis adjustment part is provided with at least two groups, the two groups of Z-axis adjustment parts are connected to each other.

[0017] In one embodiment of the present application, the focusing assembly includes a plurality of focusing poles disposed at intervals, and the plurality of focusing poles are arranged in a staggered manner.

[0018] In one embodiment of the present application, the screening chamber is provided with an ion outlet facing the connecting member, and the screening chamber is provided with a protective portion facing the extraction component, and the protective portion surrounds the ion outlet.

[0019] In one embodiment of the present application, the target stage is provided with an injection channel facing the scanning disk, and the parameter adjustment structure includes an ion meter and a sensing probe, the ion meter surrounds the outer edge of the injection channel, and the sensing probe is arranged on the end face of the target stage away from the energy adjustment structure.

[0020] The technical solution of the utility model is to fill a target block in a vacuum chamber, the target block is generally a solid material, such as silicon, silicon oxide, boron monoxide, etc., and a heating component is set and energized to make the solid material release ions in the vacuum chamber. An extraction component is provided at the outer edge of the ion source, and the extraction component is connected to the vacuum chamber. The core structure of the extraction component is an extraction electrode. The electric field in the extraction electrode will form an electric potential well, so that the ions are attracted and gathered at the center to form an ion beam. The ion beam separates from the extraction component and enters the screening chamber of the analysis structure. An analysis magnetic field is provided in the screening chamber, and the analysis magnetic field surrounds the screening chamber. The magnetic field will give the ion beam a radial force to bend the forward direction of the ion beam. Because the speed and mass of different ions in the ion beam are different, the ions will have different deflection intersections. By setting the analysis magnetic field, only ions that meet the standards can pass through the screening chamber smoothly and enter the acceleration column through the ion outlet. The remaining ions will hit the inner wall of the screening chamber because of incorrect deflection angles. In order to protect the screening chamber, it is necessary to face the extraction on the inner wall of the screening chamber. The component is provided with a protective part, which is generally made of materials such as graphene and is used to absorb ions that do not meet the standards. The ion beam enters the energy regulation structure after passing through the ion outlet and the connector. The acceleration column is used to increase the energy of the ion beam so that the ion beam can accurately process the material. The scanning disk is continuously rotated by the motor to achieve the effect of cutting the ion beam, which can effectively control the processing parameters. The acceleration column is provided with an adjustment component and a focusing component. The adjustment component can adjust the energy distribution of the ion beam by adjusting the state and intensity of the magnetic field and electric field, while the focusing component can correct the movement direction of the ion beam through the magnetic field and electric field to ensure efficient energy transmission of the ions during the processing process. When the ion beam passes through the energy regulation, it enters the target stage and processes the material. In addition, the target stage is also provided with a parameter adjustment structure, which can effectively monitor the state of the ion beam and the state of the material to be processed, and is electrically connected to the energy regulation structure, so that the energy regulation structure can automatically adjust the energy state of the ion beam in real time to meet the precise processing requirements of different materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0022] Figure 1 It is a structural schematic diagram of an embodiment of an ion source implantation device with adaptive energy regulation of the utility model;

[0023] Figure 2 It is a schematic diagram of the internal structure of an embodiment of the ion source implantation device with adaptive energy regulation of the utility model;

[0024] Figure 3 It is a cross-sectional view of an embodiment of an ion source implantation device with adaptive energy regulation according to the utility model.

[0025] Description of Figure Numbers:

[0026] 1. Ion source; 11. Vacuum chamber; 12. Target block; 13. Extraction component; 2. Analysis structure; 21. Screening chamber; 211. Ion outlet; 212. Protection part; 22. Analysis magnetic field; 23. Connector; 3. Energy adjustment structure; 31. Acceleration column; 311. Plate; 32. Gap; 33. Adjustment component; 331. Limiting shell; 332. Limiting track; 333. Adjustment pole; 334. Driving component; 34. Y-axis adjustment part; 35. Z-axis adjustment part; 36. Focusing component; 361. Focusing pole; 4. Scanning disk; 5. Target stage; 51. Injection channel; 52. Parameter adjustment structure; 53. Ion meter; 54. Induction probe.

[0027] The realization of the purpose, functional features and advantages of the utility model will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0029] Reference Figures 1 to 3In one embodiment of the utility model, an ion source 1 implantation device is provided, comprising an ion source 1, an analysis structure 2 and an energy regulation structure 3, wherein a vacuum chamber 11 is provided in the ion source 1, a target block 12 is provided in the vacuum chamber 11, a heating component is provided between the target block 12 and the vacuum chamber 11, an extraction component 13 is provided at the outer edge of the ion source 1, and the extraction component 13 is connected to the vacuum chamber 11; the analysis structure 2 is connected to the extraction component 13, a screening chamber 21 and an analysis magnetic field 22 are provided in the analysis structure 2, and the analysis magnetic field 22 is provided in the analysis structure 2 The field 22 surrounds the screening cavity 21, and the end of the analysis structure 2 away from the extraction component 13 is connected to the connector 23; the energy adjustment structure 3 is connected to the connector 23, and the energy adjustment structure 3 includes an acceleration column 31 and a scanning disk 4, and the acceleration column 31 is provided with an adjustment component 33 and a focusing component 36 in sequence, and the end of the energy adjustment structure 3 away from the connector 23 is connected to a target table 5, and a parameter adjustment structure 52 is provided in the target table 5, and the parameter adjustment structure 52 surrounds the target table 5 and is electrically connected to the energy adjustment structure 3.

[0030] In an ion source 1 implantation device of the present application, a vacuum chamber 11 is provided in the ion source 1, and a target block 12 is filled in the vacuum chamber 11. The target block 12 is generally a solid material, such as silicon, silicon oxide, and silicon borides. A heating component is provided and energized to make the solid material release ions in the vacuum chamber 11. An extraction component 13 is provided at the outer edge of the ion source 1. The extraction component 13 is connected to the vacuum chamber 11. The core structure of the extraction component 13 is an extraction electrode. The electric field in the extraction electrode will form an electric potential well, so that the ions are attracted and gathered in the center to form an ion beam. The ion beam leaves the extraction component 13. The component 13 enters the screening chamber 21 of the analysis structure 2. The screening chamber 21 is provided with an analysis magnetic field 22. The analysis magnetic field 22 surrounds the screening chamber 21. The magnetic field will give the ion beam a radial force to bend the forward direction of the ion beam. Because the speed and mass of different ions in the ion beam are different, the ions will have different deflection. By setting the analysis magnetic field 22, only ions that meet the standards can pass through the screening chamber 21 smoothly and enter the acceleration column 31 through the ion outlet 211. The remaining ions will hit the inner wall of the screening chamber 21 because of the incorrect deflection angle. In order to protect the screening chamber 21, it is necessary A protective part 212 is provided on the inner wall of the screening chamber 21 facing the extraction component 13. The protective part 212 is generally made of materials such as graphene and is used to absorb ions that do not meet the standards. The ion beam enters the energy adjustment structure 3 after passing through the ion outlet 211 and the connector 23. The acceleration column 31 is used to increase the energy of the ion beam so that the ion beam can accurately process the material. The scanning disk 4 is continuously rotated by the motor to achieve the effect of cutting the ion beam, which can effectively control the processing parameters. The acceleration column 31 is provided with an adjustment component 33 and a focusing component 36. The adjustment component 33 can adjust the energy distribution of the ion beam by adjusting the state and intensity of the magnetic field and electric field, while the focusing component 36 can correct the movement direction of the ion beam through the magnetic field and electric field to ensure efficient energy transmission of the ions during the processing. When the ion beam passes through the energy adjustment, it enters the target stage 5 and processes the material. In addition, the target stage 5 is also provided with a parameter adjustment structure 52, which can effectively monitor the state of the ion beam and the state of the material to be processed, and is electrically connected to the energy adjustment structure 3, so that the energy adjustment structure 3 can automatically adjust the energy state of the ion beam in real time to meet the precise processing requirements of different materials.

[0031] Furthermore, the analysis structure 2 is used to screen and analyze ion beams. The ions required for the operation of the equipment can be separated through the analysis structure 2, so as to improve the treatment effect on the surfaces of different materials. The ion beam screened by the analysis magnetic field 22 in the screening chamber 21 will come out from the ion outlet 211 and enter the energy regulation structure 3. In order to ensure that the energy regulation structure 3 can be operated in a suitable direction, in this embodiment, the analysis magnetic field 22 is provided with a connector 23 at the end facing the ion outlet 211. The connector 23 covers the ion outlet 211 and has the function of limiting and protecting ions.

[0032] Furthermore, the energy regulating structure 3 includes an acceleration column 31 and a scanning disk 4. The acceleration column 31 is used to give ions additional energy to ensure the effect of material processing. The acceleration column 31 is provided with a plurality of pole plates 311. An electromagnetic field is generated between the pole plates 311. The ions are accelerated in the process of moving along the magnetic flux lines. A gap 32 is provided between the pole plates 311. The ion beam needs to pass through the gap 32. In order to accurately adjust the energy of the ion beam, an adjustment component 33 and a focusing component 36 are provided at the outer edge of the gap 32. The adjustment component 33 is provided with a limiting shell 331. The inner wall of the limiting shell 331 is provided with a limiting track 332. The limiting track 332 is slidably connected with an adjustment pole 333. The adjustment pole 333 is driven and connected with a driving component 334. The driving component 334 is connected to the inner wall of the limiting shell 331. The driving component 334 can drive the adjustment pole 333 to move in the limiting shell 331. In this embodiment, the driving component 334 It includes a lead screw and a motor, and the lead screw is screwed to the adjusting magnetic pole 333 to drive the adjusting magnetic pole 333 to move, and the change of the position of the adjusting magnetic pole 333 will correspondingly change the state of the magnetic field. The adjusting magnetic pole 333 in this embodiment is an electromagnet, and the magnetic field can be further accurately changed by changing the voltage. The ion energy and distribution are adjusted by the change of voltage and magnetic field. In this embodiment, the adjusting magnetic pole 333 can also be divided into a Y-axis adjustment part 34 and a Z-axis adjustment part 35. The motion trajectory of the ion beam can be regarded as moving on the X-axis. The Y-axis adjustment part 34 is connected to the Z-axis adjustment part 35, and the Y-axis adjustment part 34 and the Z-axis adjustment part 35 are each provided with multiple groups, multiple groups of Y-axis adjustment parts 34 are connected together, and multiple groups of Z-axis adjustment parts 35 are also connected together. Through continuous Y-axis adjustment parts 34 or Z-axis adjustment parts 35, the energy distribution and motion state of the ions are adjusted to avoid energy waste due to incorrect adjustment of the ions.

[0033] Furthermore, the focusing assembly 36 includes a plurality of groups of focusing poles 361. In the present embodiment, a plurality of groups of focusing poles 361 are provided. The plurality of groups of focusing poles 361 are staggered and the intervals between adjacent focusing poles 361 gradually decrease in the direction away from the connector 23. The ion beam is ensured to be at the focal position through the continuously changing magnetic field, thereby avoiding energy waste caused by ions hitting the gap 32 due to wrong running direction.

[0034] Furthermore, the energy regulating structure 3 also includes a scanning disk 4 for controlling the scanning and distribution of the ion beam. In the present embodiment, the scanning disk 4 is a rotating metal disk with several openings for controlling the ingress and egress and orientation of the ion beam. A motor is connected to the metal disk for driving. In use, the ion beam enters the center of the scanning disk 4 through the gap 32, and then passes through the openings on the scanning disk to be controlled and oriented. By adjusting the rotation speed of the scanning disk and controlling the position of the openings, the scanning and distribution of the ion beam can be achieved, thereby controlling the position and intensity of ion implantation.

[0035] Furthermore, the parameter adjustment structure 52 includes an ion meter 53 and a sensing probe 54. After the ion beam passes through the scanning disk 4, it will enter the target table 5. The material to be processed is also placed in the target table 5. The target table 5 is provided with an injection channel 51 facing the scanning disk 4. The outer edge of the injection channel 51 is provided with an ion meter 53 for monitoring the number and operating status of ions, and the sensing probe 54 is arranged at the end of the target table 5 away from the scanning disk 4. After the ion beam passes through the injection channel 51, the surface of the material is processed. The sensing probe 54 is arranged facing the material for real-time detection of the current state of the material. The data of the ion meter 53 and the sensing probe 54 will be continuously transmitted to the database and electrically connected to the energy adjustment structure 3 through the database connection. The plate 311, the adjustment component 33, the focusing component 36 and the scanning disk 4 in the energy adjustment structure 3 can cooperate with each other. Through the above structure, the ion source 1 can adaptively adjust the energy and accurately process the surfaces of different materials, thereby improving work efficiency and effect.

[0036] Combined with reference Figures 2 to 3 In one embodiment of the present application, the acceleration column 31 includes a pole plate 311 and a gap 32, and the pole plate 311 is provided with at least two groups, and the two groups of the pole plates 311 are arranged opposite to each other, and the two groups of the pole plates 311 are clamped to form an acceleration field, and the acceleration field is arranged directly opposite to the connecting member 23; the gap 32 is arranged between adjacent pole plates 311, and the adjustment component 33 and the focusing component 36 are surrounded by the gap 32, the adjustment component 33 is connected to one end of the gap 32 close to the connecting member 23, and the focusing component 36 is connected to one end of the gap 32 away from the connecting member 23, and the adjustment component 33 is connected to the focusing component 36.

[0037] In an ion source 1 implantation device of the present application, an acceleration column 31 is used to give ions additional energy to ensure the effect of material processing. The acceleration column 31 is provided with multiple pole plates 311, and an electromagnetic field is generated between the pole plates 311. The ions are accelerated in the process of moving along the magnetic flux lines. A gap 32 is provided between the pole plates 311, and the ion beam needs to pass through the gap 32. In order to accurately adjust the energy of the ion beam, an adjustment component 33 and a focusing component 36 are provided at the outer edge of the gap 32. The adjustment component 33 is provided with a limit housing 331, and a limit track 332 is provided on the inner wall of the limit housing 331. An adjustment magnetic pole 333 is slidably connected to the limit track 332. The adjustment magnetic pole 333 is driven and connected to a driving component 334, and the driving component 334 is connected to the inner wall of the limit housing 331. The driving component 334 can drive the adjustment magnetic pole 333 to move in the limit housing 331. In this embodiment, the driving component 334 includes a screw and a motor, which is screwed to the adjusting magnetic pole 333 through a lead screw to drive the adjusting magnetic pole 333 to move, and the change in the position of the adjusting magnetic pole 333 will correspondingly change the state of the magnetic field, and the adjusting magnetic pole 333 in this embodiment is an electromagnet, which can further accurately change the magnetic field by changing the voltage, and achieve the adjustment of ion energy and distribution through the change of voltage and magnetic field, and in this embodiment, the adjusting magnetic pole 333 can also be divided into a Y-axis adjustment part 34 and a Z-axis adjustment part 35, and the motion trajectory of the ion beam can be regarded as moving on the X-axis, the Y-axis adjustment part 34 is connected to the Z-axis adjustment part 35, and the Y-axis adjustment part 34 and the Z-axis adjustment part 35 are each provided with multiple groups, multiple groups of Y-axis adjustment parts 34 are connected together, and multiple groups of Z-axis adjustment parts 35 are also connected together, through continuous Y-axis adjustment parts 34 or Z-axis adjustment parts 35, the energy distribution and motion state of the ions are adjusted, avoiding energy waste due to incorrect adjustment of the ions.

[0038] Combined with reference Figures 2 to 3 In one embodiment of the present application, the adjustment component 33 includes a limit shell 331 and an adjustment magnetic pole 333, the limit shell 331 is wrapped around the gap 32, and a limit track 332 is provided in the limit shell 331; the adjustment magnetic pole 333 is slidably connected to the limit track 332, and a driving component 334 is provided between the limit shell 331 and the adjustment magnetic pole 333, the driving component 334 is connected to the limit shell 331, and is drivingly connected to the adjustment magnetic pole 333, and the adjustment magnetic pole 333 is provided with two groups, and the two adjustment magnetic poles 333 are arranged opposite to each other.

[0039] In an ion source 1 injection device of the present application, an adjustment component 33 is provided with a limiting shell 331, and a limiting track 332 is provided on the inner wall of the limiting shell 331. An adjustment magnetic pole 333 is slidably connected to the limiting track 332. The adjustment magnetic pole 333 is driven and connected to a driving component 334, and the driving component 334 is connected to the inner wall of the limiting shell 331. The driving component 334 can drive the adjustment magnetic pole 333 to move in the limiting shell 331. In this embodiment, the driving component 334 includes a screw rod and a motor, and the adjustment magnetic pole 333 is driven to move by the screw rod being screwed to the adjustment magnetic pole 333. The change in the position of the adjustment magnetic pole 333 will correspondingly change the state of the magnetic field. The adjustment magnetic pole 333 in this embodiment is an electromagnet, and the magnetic field can be further accurately changed by changing the voltage. The change in voltage and magnetic field can achieve the adjustment of ion energy and ion distribution.

[0040] Combined with reference Figure 1 to Figure 2 In one embodiment of the present application, the adjustment component 33 includes a Y-axis adjustment part 34 and a Z-axis adjustment part 35, the Y-axis adjustment part 34 is connected to the Z-axis adjustment part 35, the Y-axis adjustment part 34 is provided with at least two groups, the two groups of the Y-axis adjustment parts 34 are connected to each other, and the Z-axis adjustment part 35 is provided with at least two groups, the two groups of the Z-axis adjustment parts 35 are connected to each other.

[0041] In an ion source 1 implantation device of the present application, the adjustment magnetic pole 333 can also be divided into a Y-axis adjustment part 34 and a Z-axis adjustment part 35. The motion trajectory of the ion beam can be regarded as moving on the X-axis. The Y-axis adjustment part 34 is connected to the Z-axis adjustment part 35, and the Y-axis adjustment part 34 and the Z-axis adjustment part 35 are each provided with multiple groups. Multiple groups of Y-axis adjustment parts 34 are connected together, and multiple groups of Z-axis adjustment parts 35 are also connected together. Through continuous Y-axis adjustment parts 34 or Z-axis adjustment parts 35, the energy distribution and motion state of the ions are adjusted to avoid energy waste due to incorrect adjustment of the ions.

[0042] Combined with reference Figure 2 In one embodiment of the present application, the focusing assembly 36 includes a plurality of focusing poles 361 that are spaced apart from each other, and the plurality of focusing poles 361 are arranged in a staggered manner.

[0043] In an ion source 1 injection device of the present application, the focusing component 36 includes a plurality of groups of focusing poles 361. In the present embodiment, a plurality of groups of focusing poles 361 are provided. The plurality of groups of focusing poles 361 are staggered and arranged at intervals, and the intervals between adjacent focusing poles 361 gradually decrease in the direction away from the connecting member 23. The ion beam is ensured to be at the focal position through the continuously changing magnetic field, thereby avoiding energy waste caused by ions hitting the gap 32 due to the wrong running direction.

[0044] Combined with reference Figure 3In one embodiment of the present application, the screening chamber 21 is provided with an ion outlet 211 facing the connecting member 23 , and the screening chamber 21 is provided with a protective portion 212 facing the extraction component 13 , and the protective portion 212 surrounds the ion outlet 211 .

[0045] In an ion source 1 implantation device of the present application, the ion beam separates from the extraction component 13 and enters the screening chamber 21 of the analysis structure 2. An analysis magnetic field 22 is provided in the screening chamber 21. The analysis magnetic field 22 surrounds the screening chamber 21. The magnetic field will give the ion beam a radial force to bend the forward direction of the ion beam. Because the speed and mass of different ions in the ion beam are different, the ions will have different deflection intersections. By setting the analysis magnetic field 22, only ions that meet the standards can pass through the screening chamber 21 smoothly and enter the acceleration column 31 through the ion outlet 211. The remaining ions will hit the inner wall of the screening chamber 21 due to incorrect deflection angles. In order to protect the screening chamber 21, it is necessary to set a protective part 212 on the inner wall of the screening chamber 21 facing the extraction component 13. The protective part 212 is generally made of materials such as graphene and is used to absorb ions that do not meet the standards.

[0046] Combined with reference Figures 2 to 3 In one embodiment of the present application, the target stage 5 is provided with an injection channel 51 facing the scanning disk 4, and the parameter adjustment structure 52 includes an ion meter 53 and a sensing probe 54, the ion meter 53 surrounds the outer edge of the injection channel 51, and the sensing probe 54 is arranged on the end face of the target stage 5 away from the energy adjustment structure 3.

[0047] In an ion source 1 implantation device of the present application, a parameter adjustment structure 52 includes an ion meter 53 and a sensing probe 54. After the ion beam passes through the scanning disk 4, it will enter the target table 5. The material to be processed is also placed in the target table 5. The target table 5 is provided with an injection channel 51 facing the scanning disk 4. The outer edge of the injection channel 51 is provided with an ion meter 53 for monitoring the number and operating status of ions, and the sensing probe 54 is provided at the end of the target table 5 away from the scanning disk 4. After the ion beam passes through the injection channel 51, the surface of the material is processed. The sensing probe 54 is arranged facing the material for real-time detection of the current state of the material. The data of the ion meter 53 and the sensing probe 54 will be continuously transmitted to the database and electrically connected to the energy adjustment structure 3 through the database connection. The plate 311, the adjustment component 33, the focusing component 36 and the scanning disk 4 in the energy adjustment structure 3 can cooperate with each other. Through the above structure, the ion source 1 can adaptively adjust the energy and accurately process the surfaces of different materials, thereby improving work efficiency and effect.

[0048] The same or similar numbers in the drawings of this embodiment correspond to the same or similar parts; in the description of this application, it should be understood that if the terms "upper", "lower", "left", "right", etc. indicate an orientation or position relationship based on the orientation or position relationship shown in the drawings, it is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as a limitation on this patent. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0049] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. An ion source implantation device with adaptive energy regulation, It is characterized in that include: An ion source, wherein a vacuum chamber is provided in the ion source, a target block is provided in the vacuum chamber, a heating component is provided between the target block and the vacuum chamber, an extraction component is provided at the outer edge of the ion source, and the extraction component is connected to the vacuum chamber; An analysis structure, the analysis structure is connected to the extraction component, a screening cavity and an analysis magnetic field are provided in the analysis structure, the analysis magnetic field surrounds the screening cavity, and a connector is connected to one end of the analysis structure away from the extraction component; as well as An energy regulating structure, the energy regulating structure is connected to the connecting piece, the energy regulating structure includes an acceleration column and a scanning disk, the acceleration column is provided with an adjustment component and a focusing component in sequence, the end of the energy regulating structure away from the connecting piece is connected to a target table, a parameter regulating structure is provided in the target table, the parameter regulating structure is wrapped around the target table, and is electrically connected to the energy regulating structure.

2. The ion source implantation device with adaptive energy regulation according to claim 1, It is characterized in that The acceleration column comprises: Electrode plates, wherein at least two groups of the electrode plates are provided, the two groups of the electrode plates are arranged opposite to each other, the two groups of the electrode plates are sandwiched to form an acceleration field, and the acceleration field is arranged directly opposite to the connecting member; and A gap is provided between adjacent pole plates, the adjustment component and the focusing component are surrounded by the gap, the adjustment component is connected to one end of the gap close to the connecting member, the focusing component is connected to one end of the gap away from the connecting member, and the adjustment component is connected to the focusing component.

3. The ion source implantation device with adaptive energy regulation according to claim 2, It is characterized in that The adjustment component comprises: a limiting shell, the limiting shell surrounds the gap, and a limiting track is provided in the limiting shell; and An adjusting magnetic pole is slidably connected to the limiting track, a driving component is provided between the limiting shell and the adjusting magnetic pole, the driving component is connected to the limiting shell and drivingly connected to the adjusting magnetic pole, and two groups of adjusting magnetic poles are provided, and the two adjusting magnetic poles are arranged opposite to each other.

4. The ion source implantation device with adaptive energy regulation according to claim 3, It is characterized in that The adjustment component includes a Y-axis adjustment part and a Z-axis adjustment part, the Y-axis adjustment part is connected to the Z-axis adjustment part, the Y-axis adjustment part is provided with at least two groups, the two groups of Y-axis adjustment parts are connected to each other, and the Z-axis adjustment part is provided with at least two groups, the two groups of Z-axis adjustment parts are connected to each other.

5. An ion source implantation device with adaptive energy regulation according to any one of claims 1 to 4, It is characterized in that The focusing assembly includes a plurality of focusing poles arranged at intervals, and the plurality of focusing poles are arranged in a staggered manner.

6. An ion source implantation device with adaptive energy regulation according to any one of claims 1 to 4, It is characterized in that The screening cavity is provided with an ion outlet facing the connecting piece, and the screening cavity is provided with a protective part facing the extraction component, and the protective part surrounds the ion outlet.

7. An ion source implantation device with adaptive energy regulation according to any one of claims 1 to 4, It is characterized in that The target platform is provided with an injection channel facing the scanning disk. The parameter adjustment structure includes an ion meter and a sensing probe. The ion meter surrounds the outer edge of the injection channel. The sensing probe is arranged on the end face of the target platform away from the energy adjustment structure.

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