Three-wavelength high-energy laser

Abstract

The utility model provides a three-wavelength high-energy laser. A light source, a green stone crystal rod and a YAG crystal rod are arranged in the light gathering cavity, and the green stone crystal rod and the Nd: YAG crystal rod are arranged on the two sides of the light source; the focus lens is arranged on a light path on one side of light emitted by the green stone crystal rod; the bonding crystal can be selectively arranged on an emergent light path of the focus lens according to the emergent light requirement; the first beam splitter is matched with the second reflector to reflect light to the Nd: YAG crystal rod; an optical shutter between the first beam splitter and the second reflector is selected to be opened or closed according to the light emitting requirement; and selecting whether to arrange the frequency doubling crystal on the light emitting side of the Nd: YAG crystal rod according to the light emitting requirement.

Description

Technical Field

[0001] The utility model relates to the technical field of optics and lasers, in particular to a three-wavelength high-energy laser. Background Art

[0002] Lasers with different functions have different operating wavelengths.

[0003] 1064nm and 532nm picosecond lasers are widely used, and currently have a very broad market application in laser marking and laser beauty. The lasers in this band have a short action time and high pulse energy, making them one of the most important technologies in laser beauty. As the best hair removal technology, 755nm laser technology also plays an extremely important role in laser beauty. The three wavelengths of lasers are widely used in medical beauty.

[0004] Currently, the commonly used 1064nm high-energy picosecond lasers mostly use a picosecond seed source plus a multiple laser amplifier device to achieve the requirements of high-energy picosecond laser output, and the seed source and the laser amplifier device are two independent laser modules.

[0005] At present, seed sources are generally divided into two types: solid seeds based on semiconductor pumping technology and light seeds based on light technology. The picosecond laser energy generated by the seed source is mostly at the micro-joule level, and it is very easy to be damaged by reflected light during the laser amplification process. Therefore, the picosecond seed source needs to be used in conjunction with a laser isolator during the laser amplification process to achieve stable output of high laser energy.

[0006] Since the laser energy generated by the picosecond seed source is very small, usually at the microjoule level, a laser amplification module is required to achieve high-energy picosecond output. The laser amplification module can amplify the microjoule-level picosecond laser to the millijoule level. The traditional seed source and laser amplification module are two independent modules, and an optical isolator is required between the two to ensure that the components are not damaged. Utility Model Content

[0007] The utility model aims to solve one of the above-mentioned technical problems and provide a high-energy laser with a compact structure, convenient adjustment and multi-wavelength working mode.

[0008] To achieve the above purpose, the utility model adopts the following technical solutions:

[0009] A three-wavelength high-energy laser, comprising:

[0010] Focusing cavity;

[0011] Light source: set in the focusing cavity;

[0012] Emerald crystal rod and Nd:YAG crystal rod: both are arranged in the focusing cavity, and the emerald crystal rod and Nd:YAG crystal rod are arranged on both sides of the light source;

[0013] Focusing lens: It is set on the optical path of the side where the light is emitted from the emerald crystal rod;

[0014] Bonded crystal: arranged on the outgoing light path on one side of the emerald crystal rod, the bonded crystal is made of YAG+Nd:YAG+Cr:YAG+YAG bonding material; it can be selectively arranged on the outgoing light path of the focusing lens;

[0015] First beam splitter: if the bonded crystal is set on the optical path, it is located on the outgoing optical path of the bonded crystal; if the bonded crystal is not set on the optical path, it is located on the outgoing optical path of the focusing lens;

[0016] The first beam splitter: arranged on the outgoing light path of the bonded crystal;

[0017] A second reflector is arranged on the reflected light path of the first beam splitter, and is used to reflect the reflected light of the first beam splitter to the Nd:YAG crystal rod;

[0018] Optical shutter: arranged between the first beam splitter and the second reflector;

[0019] Frequency doubling crystal: can be selected and set on the output light path of the Nd:YAG crystal rod to amplify the output light of the Nd:YAG crystal rod to a specified wavelength.

[0020] In some embodiments of the utility model, the laser further includes a third reflector and a fourth reflector, the third reflector is arranged at the light output end of the Nd:YAG crystal rod away from the second reflector, the fourth reflector is arranged on the reflected light path of the third reflector, and the frequency doubling crystal can be selectively arranged on the reflected light path of the fourth reflector.

[0021] In some embodiments of the utility model, the laser further includes a polarizer, a fifth reflector, a quarter wave plate and a total reflection mirror. The polarizer is arranged between the second reflector and the Nd:YAG crystal rod, and the transmitted light of the polarizer enters the Nd:YAG crystal rod; the quarter wave plate and the total reflection mirror are arranged in sequence on the outgoing light path of the Nd:YAG crystal rod away from the polarizer; the fifth reflector is arranged on the refracted light path of the polarizer, and the frequency doubling crystal is arranged on the reflected light path of the fifth reflector.

[0022] In some embodiments of the present invention, a collimator is disposed between the second reflector and the polarizer.

[0023] In some embodiments of the present invention, the laser further comprises a stray light collector, and the stray light collector is arranged on the reflection light path of the polarizer.

[0024] In some embodiments of the utility model, the emerald crystal rod emits a 755nm laser, and the end of the emerald crystal rod close to the bonded crystal is the main light-emitting end, the main light-emitting end is coated with a 755nm partial reflection film, and the end opposite to the main light-emitting end is coated with a 755nm total reflection film.

[0025] In some embodiments of the utility model, a light homogenizing sheet is further arranged between the emerald crystal rod and the focusing lens.

[0026] In some embodiments of the present invention, the divergence angle of the light homogenizer is 0-30°.

[0027] In some embodiments of the utility model, the side of the bonded crystal close to the emerald crystal rod is coated with a 755nm anti-reflection and a 1064nm total reflection film, the side of the first beam splitter close to the bonded crystal is coated with a 1064nm total reflection and a 755nm anti-reflection film, the side away from the bonded crystal is coated with a 755nm anti-reflection film, and the side of the second reflector facing the first beam splitter is coated with a 1064nm high reflection film.

[0028] In some embodiments of the present invention, both ends of the Nd:YAG crystal rod are plated with 1064 anti-reflection film.

[0029] In some embodiments of the present invention, the focusing lens is plano-convex glass or bi-convex glass.

[0030] In some implementations of the present invention, the end faces on both sides of the 1 / 4 wave plate are plated with 1064 anti-reflection film.

[0031] Compared with the prior art, the technical advantages of the utility model are:

[0032] 1. The utility model is a compact laser, which can realize three-wavelength high-energy output, 755nm laser high-energy long pulse output, 1064nm and 532nm laser picosecond high-energy output, and the output energy of 1064nm picosecond laser is above 500mJ.

[0033] 2. The alexandrite rod and Nd:YAG rod share the same xenon lamp pump, realizing the effective utilization of the pump xenon lamp.

[0034] 3. The bonded crystal combination of YAG+Nd:YAG+Cr:YAG+YAG can effectively avoid crystal damage, achieve better crystal heat dissipation, reduce crystal thermal effects, and make the system more stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0036] Figure 1 This is a schematic structural diagram of the first embodiment of the laser of the utility model;

[0037] Figure 2 This is a schematic structural diagram of a second embodiment of the laser of the utility model;

[0038] In the above figures:

[0039] 1- Focusing cavity;

[0040] 2- Light source;

[0041] 3- Emerald crystal rod;

[0042] 4-Nd:YAG crystal rod;

[0043] 5-bonded crystals;

[0044] 6- Focusing lens;

[0045] 7- first beam splitter;

[0046] 8- second reflecting mirror;

[0047] 9-light shutter;

[0048] 10-fold frequency crystal;

[0049] 11-light homogenizing sheet;

[0050] 12- fourth reflecting mirror;

[0051] 13- third reflector;

[0052] 14- collimator lens;

[0053] 15- Polarizer;

[0054] 16- fifth reflecting mirror;

[0055] 17-1 / 4 wave plate;

[0056] 18-Full reflective mirror;

[0057] 19- Stray light collector. DETAILED DESCRIPTION

[0058] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0059] It should be noted that when an element is referred to as being "disposed on", "connected to", or "fixed to" another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or indirectly connected to the other element. In addition, the terms "first", "second", "third", "fourth", and "fifth" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance.

[0060] The utility model provides a three-wavelength high-energy laser, which can emit three wavelengths of laser light and has a compact structure. The laser has two implementation structures, which can refer to Figure 1 and Figure 2 .

[0061] This embodiment takes the laser capable of emitting lasers of 532nm, 755nm, and 1064nm as an example to illustrate the structure of the laser. If it is necessary to emit lasers of different wavelengths, the coating of each structural unit can be adaptively changed.

[0062] The two embodiments are similar in that the laser includes the following structural units.

[0063] The laser comprises a focusing cavity 1, in which a light source 2 is arranged. In this embodiment, the light source 2 is a xenon lamp connected to an external power source.

[0064] Emerald crystal rod 3 and Nd:YAG crystal rod 4 are also provided in the focusing cavity 1, and the emerald crystal rod 3 and YAG crystal rod 4 are arranged on both sides of the light source 2 in the radial direction. The two crystal rods can emit lasers of different wavelengths respectively. The crystal rod emits light on both sides. In this embodiment, the crystal rod on one side is used as the main light-emitting end. The main light-emitting end of the emerald crystal rod 3 is on the left side of the direction shown in the figure. According to the wavelength of the laser to be emitted, in order to enhance the light-emitting effect, coating treatment can be performed on different light-emitting ends.

[0065] In some embodiments of the utility model, the emerald crystal rod 3 emits a 755nm laser, the main light-emitting end of the emerald crystal rod is coated with a 755nm partial reflection film, and the end opposite to the main light-emitting end is coated with a 755nm total reflection film. The Nd:YAG crystal rod 4 uses a plane-to-plane Nd:YAG crystal with or without a wedge angle, and its wedge angle is between 0-5°, and both ends are coated with a 1064nm anti-reflection film.

[0066] The focusing lens 6 is arranged on the optical path of one side of the light emitted from the main light-emitting end of the emerald crystal rod 3, and is arranged between the emerald crystal rod 3 and the bonded crystal 5. The focusing lens 6 is made of, but not limited to, plano-convex or bi-convex glass, quartz and other transparent materials, and the lens is a single piece or a lens group, and both ends of each lens are coated with a 755nm anti-reflection film. In some embodiments of the utility model, the focusing lens 6 is plano-convex glass or bi-convex glass.

[0067] The bonded crystal 5 is arranged on the outgoing optical path on one side of the main light-emitting end of the emerald crystal rod 3. In this embodiment, the bonded crystal 5 is made of YAG+Nd:YAG+Cr:YAG+YAG bonding material. The side of the bonded crystal 5 close to the emerald crystal rod 3 is coated with a 755nm anti-reflection and a 1064nm total reflection film. Specifically, the surface of the bonded crystal 5 close to the Nd:YAG side is coated with a 755nm anti-reflection and a 1064nm total reflection film, and this side is close to the focusing lens 6; the surface of the YAG close to the Cr:YAG side is coated with a 1064nm partial reflection and a 755nm total reflection film, wherein the reflectivity of 1064nm is between 8% and 60%, and the initial transmittance of Cr:YAG is between 8% and 50%, and this side is far away from the focusing lens 6. The bonded crystal 5 is placed on a guide rail. When the 755nm laser is needed, it is moved out of the optical path. When the 1064nm and 532nm lasers need to be output, it is moved into the optical path.

[0068] In order to improve the uniformity of the transmitted light, in some embodiments of the utility model, a light homogenizer 11 is further provided between the emerald crystal rod 3 and the focusing lens 6. The light homogenizer 11 is used to shape the laser. The light homogenizer 11 may be used, including but not limited to, a light homogenizer and an optical fiber coupling component. The divergence angle of the light homogenizer 11 is 0-30°.

[0069] A first beam splitter 7 is arranged at the main light output end of the emerald crystal rod 3. If the bonded crystal 5 is arranged on the optical path, the first beam splitter 7 is located on the output optical path of the bonded crystal 6. If the bonded crystal 5 is not arranged on the optical path, the first beam splitter 7 is located on the output optical path of the focusing lens 6.

[0070] The first beam splitter 7 has a 45° reflection function for reflecting 1064nm laser and transmitting 755nm laser. The second reflector 8 is arranged on the reflection light path of the first beam splitter 7 for reflecting the reflected light of the first beam splitter 7 to the Nd:YAG crystal rod 4.

[0071] An optical shutter 9 is provided between the first beam splitter 7 and the second reflector 8. The optical shutter 9 is opened or closed according to the light output requirement. Specifically, in this embodiment, the optical shutter 9 is used to block the 1064nm laser. When the 1064nm and 532nm laser output is required, the optical shutter is opened, and the 1064nm picosecond laser can enter the Nd:YAG crystal rod 4. When the 755nm laser output is required, the optical shutter is closed to prevent the 1064nm laser from oscillating and damaging the components in the optical path.

[0072] A frequency doubling crystal 10 (also called a frequency doubling crystal) is arranged on the output light path of the Nd:YAG crystal rod 4 to amplify the output light of the Nd:YAG crystal rod 4 to a specified wavelength. In this embodiment, the frequency doubling crystal 10 is used for outputting 1064nm laser.

[0073] The frequency doubling crystal 10 can be selectively set in the output optical path of the Nd:YAG crystal rod 4. The frequency doubling crystal 10 can be made of, but not limited to, KTP, BBO, LBO, etc. When 1064nm laser output is required, the frequency doubling crystal 10 is moved out of the optical path, and when 532nm laser output is required, the frequency doubling crystal 10 is moved into the optical path.

[0074] The difference between the two implementations is that the optical paths of the light emitted from the Nd:YAG crystal rod 4 to the frequency doubling crystal 10 are different.

[0075] First Embodiment Structure Reference Figure 1 .

[0076] In some embodiments of the utility model, the laser further includes a third reflector 13 and a fourth reflector 12. The third reflector 13 is arranged at the light output end of the Nd:YAG crystal rod 4 away from the second reflector 8, and the fourth reflector 12 is arranged on the reflected light path of the third reflector 13. The frequency doubling crystal 10 can be selectively arranged on the reflected light path of the fourth reflector 12.

[0077] In order to improve the collimation of light propagation, a collimating mirror 14 may be optionally disposed between the second reflector 8 and the Nd:YAG crystal rod 4 .

[0078] When it is necessary to emit 532nm laser, move in the frequency doubling crystal 10, move in the bonding crystal 5, and open the shutter;

[0079] When it is necessary to emit 755nm laser, the bonded crystal 5 is removed and the shutter is closed;

[0080] When it is necessary to emit 1064nm laser, the frequency doubling crystal 10 is moved out, the bonding crystal 5 is moved in, and the shutter is opened.

[0081] Second Embodiment Structure Reference Figure 2 .

[0082] In some embodiments of the utility model, the laser further includes a polarizer 15, a fifth reflector 16, a quarter wave plate 17 and a total reflector 18. The polarizer 15 is arranged between the second reflector 8 and the Nd:YAG crystal rod 4, and the transmitted light of the polarizer 15 enters the Nd:YAG crystal rod 4; the quarter wave plate 17 and the total reflector 18 are sequentially arranged on the outgoing light path of the Nd:YAG crystal rod 4 away from the polarizer 15; the fifth reflector 16 is arranged on the refracted light path of the polarizer 15, and the frequency doubling crystal 10 is arranged on the reflected light path of the fifth reflector 16.

[0083] Wherein, both ends of the Nd:YAG crystal rod 4 are coated with 1064 anti-reflection film, and both side end faces of the 1 / 4 wave plate 17 are coated with 1064 anti-reflection film.

[0084] In order to improve the collimation of the propagating light, a collimator 14 is arranged between the second reflector 8 and the polarizer 15 .

[0085] In order to collect the stray light reflected by the polarizer 15 , the laser further includes a stray light collector 19 , which is disposed on the reflected light path of the polarizer 15 .

[0086] In some embodiments of the present invention, the first beam splitter 7 is coated with a 1064nm total reflection and 755nm anti-reflection film on the side close to the bonded crystal 5, and a 755nm anti-reflection film on the side away from the bonded crystal 5, and the second reflector 8 is coated with a 1064nm high reflection film on the side facing the first beam splitter 7.

[0087] The alexandrite crystal rod 3 is pumped by the xenon lamp 2 to output 755nm light. The 755nm laser is shaped by the light homogenizer 11 and then focused by the focusing lens 6 to enter the bonded crystal 5, and outputs 1064nm picosecond laser.

[0088] After the 1064nm laser is reflected by the first beam splitter 7 and the second reflector 8 and collimated by the collimator 14, it enters the polarizer 15. The polarizer 15 allows the p light to pass through and reflects the S light. Therefore, after the aforementioned 1064nm circularly polarized light passes through the polarizer 15, only the p light enters the Nd:YAG crystal rod 4, and the s light is reflected to the stray light absorption device 19. After the p light enters the Nd:YAG rod 4, it is amplified and reaches the total reflection mirror 18, which totally reflects the 1064nm laser to the left side of the Nd:YAG rod 4. This process passes through the 1 / 4 wave plate 17 twice, and the 1064nm laser is changed from p light to s light after passing through the 1 / 4 wave plate 17 twice, and enters the Nd:YAG crystal rod 4 again for amplification. At this time, the 1064nm S light is output from the right side of the Nd:YAG crystal rod 4. When it enters the polarizer 15, the S light is totally reflected to the reflection mirror 18. At this time, the output 1064nm laser enters the frequency doubling crystal 10 to achieve 532nm output.

[0089] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A three-wavelength high-energy laser, characterized in that: include: Focusing cavity; Light source: set in the focusing cavity; Emerald crystal rod and Nd:YAG crystal rod: both are arranged in the focusing cavity, and the emerald crystal rod and Nd:YAG crystal rod are arranged on both sides of the light source; Focusing lens: It is set on the optical path of the side where the light is emitted from the emerald crystal rod; Bonded crystal: set on the outgoing light path on one side of the emerald crystal rod; can be selectively set on the outgoing light path of the focusing lens; First beam splitter: if the bonded crystal is set on the optical path, it is located on the outgoing optical path of the bonded crystal; if the bonded crystal is not set on the optical path, it is located on the outgoing optical path of the focusing lens; A second reflector is arranged on the reflected light path of the first beam splitter, and is used to reflect the reflected light of the first beam splitter to the Nd:YAG crystal rod; Optical shutter: arranged between the first beam splitter and the second reflector; Frequency doubling crystal: can be selected and set in the output light path of the YAG crystal rod to amplify the output light of the Nd:YAG crystal rod to a specified wavelength.

2. The three-wavelength high-energy laser according to claim 1, characterized in that: The laser further includes a third reflector and a fourth reflector, wherein the third reflector is arranged at the light output end of the Nd:YAG crystal rod away from the second reflector, and the fourth reflector is arranged on the reflected light path of the third reflector. The frequency doubling crystal can be selectively arranged on the reflected light path of the fourth reflector.

3. The three-wavelength high-energy laser according to claim 1, characterized in that: The laser further includes a polarizer, a fifth reflector, a quarter wave plate and a total reflector. The polarizer is arranged between the second reflector and the Nd:YAG crystal rod, and the transmitted light of the polarizer enters the Nd:YAG crystal rod; the quarter wave plate and the total reflector are arranged in sequence on the outgoing light path of the YAG crystal rod away from the polarizer; the fifth reflector is arranged on the refracted light path of the polarizer, and the frequency doubling crystal is arranged on the reflected light path of the fifth reflector.

4. The three-wavelength high-energy laser according to claim 3, characterized in that: A collimator is arranged between the second reflector and the polarizer.

5. The three-wavelength high-energy laser according to claim 3, characterized in that: The laser further comprises a stray light collector, which is arranged on the reflected light path of the polarizer.

6. The three-wavelength high-energy laser according to claim 1, characterized in that: The emerald crystal rod emits 755nm laser, one end of the emerald crystal rod close to the bonded crystal is the main light emitting end, the main light emitting end is coated with a 755nm partial reflection film, and the end opposite to the main light emitting end is coated with a 755nm total reflection film.

7. The three-wavelength high-energy laser according to claim 1, characterized in that: A light homogenizing sheet is further arranged between the emerald crystal rod and the focusing lens.

8. The three-wavelength high-energy laser according to claim 1, characterized in that: Both ends of the YAG crystal rod are coated with 1064nm anti-reflection films.

9. The three-wavelength high-energy laser according to claim 1, 2 or 3, characterized in that: The side of the bonded crystal close to the emerald crystal rod is coated with a 755nm anti-reflection and 1064nm total reflection film, the side of the first beam splitter close to the bonded crystal is coated with a 1064nm total reflection and 755nm anti-reflection film, the side away from the bonded crystal is coated with a 755nm anti-reflection film, and the side of the second reflector facing the first beam splitter is coated with a 1064nm high reflection film.

10. The three-wavelength high-energy laser according to claim 9, characterized in that: The end faces on both sides of the 1 / 4 wave plate are coated with 1064 anti-reflection film.

Images