Semiconductor device and manufacturing method thereof
a semiconductor and film technology, applied in semiconductor devices, capacitors, electrical devices, etc., can solve the problems of reducing the reliability of the insulation film, increasing the consumption power, and increasing the consumption power of the gate insulation film
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
embodiment 1
[0055]FIG. 1 is a cross-sectional view of a completed semiconductor device according to a first embodiment of this invention and FIG. 12 and FIG. 13 are cross-sectional views showing the sequence of production steps thereof.
[0056] A semiconductor substrate 1 comprising single crystalline Si of crystal orientation (100), P-conductivity type and 20 cm diameter was formed with an inter-device isolation region (not illustrated) for defining an active region and applied with ion implantation of P-conductivity type ions for controlling the substrate concentration, heat treatment time, ion implantation (for controlling the threshold voltage and the source-drain activating heat treatment by known methods). Then, an Al2O3 film of 1.0 nm thick was deposited at 350° C. by an atom layer deposition CVD method (ALCVD method) using trimethyl aluminum [Al(CH3)3] as a starting material gas and H2O as an oxidizing gas. Further, an SiO2 film was formed to 0.5 nm thickness in the same apparatus by the...
embodiment 2
[0065]FIG. 2 is a cross-sectional view showing a completed field effect transistor according to a second embodiment of this invention, and FIG. 14 and FIG. 15 are schematic views for the production steps thereof. In the field effect transistor according to this Example 2, a high melting metal gate was applied instead of the polycrystalline silicon gate.
[0066] A semiconductor substrate 1 comprising single crystalline Si having crystal orientation (100), P-conductivity type and of 20 cm diameter was formed with an inter-device isolation region (not illustrated) for defining an active region and applied with implantation of P-conductivity type ions for controlling the substrate concentration, extended heat treatment time, and ion implantation for controlling the threshold voltage and activating heat treatment by known methods. Subsequently, an Al2O3 film was formed to a thickness of 1.5 nm by an ECR sputtering method. The ECR sputtering method is as shown in Example 1. However, sputte...
embodiment 3
[0071]FIG. 3 is a cross sectional view showing a completed field effect transistor in a third embodiment according to this invention and FIG. 16 to FIG. 20 are schematic views for manufacturing steps thereof. In a field effect transistor of this Embodiment 3, an activating heat treatment was applied for implanted ions before formation of the gate insulation film thereby mitigating the thermal load on a high dielectric insulation film.
[0072] A semiconductor substrate 1 comprising single crystalline Si having crystal orientation (100), P-conductivity type and of 20 cm diameter was applied with formation of the inter-device isolation region (not illustrated) for defining an active region, implantation of P-conductivity type ions for controlling the substrate concentration, heat treatment time, and ion implantation (for controlling the threshold voltage and an activating heat treatment by known methods), and then a thermal oxide film 14 was formed to 5 nm thickness. Then, after deposit...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| temperature | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More