A kind of reverse polarity algainp base light-emitting diode and its manufacturing method

Abstract

The invention discloses a reversed-polarity AlGaInP-based light-emitting diode and a manufacturing method thereof and belongs to the technical field of photoelectron. The method includes the following steps: firstly manufacturing a light-emitting-diode epitaxial wafer and manufacturing a holophote structure layer on the epitaxial wafer; bonding the epitaxial wafer provided with the holophote structure layer and a permanent substrate through a metal bonding layer; coarsening the surface of a first coarsening layer through removal of a temporary substrate, a buffer layer, a barrier layer and an n-type gallium arsenide layer; manufacturing patterned extending electrodes on the first coarsening layer and the n-type gallium arsenide ohmic contact layer; using a mask to protect existing patterned extending electrodes and removing the first coarsening layer and the n-type gallium arsenide ohmic contact layer, which are outside a mask protective layer and coarsening a second coarsening layer; and forming a main electrode on the second coarsening layer. The method uses a coarsening epitaxial layer structure and mask protection to improve adhesiveness and integrity of the electrodes and the epitaxial layer so that work voltage stability of a light-emitting device is ensured and product quality and yield are improved significantly.

Description

Technical field

[0001] The invention belongs to the field of optoelectronic technology, especially the manufacturing technology of reverse polarity AlGaInP-based light-emitting diodes. Background technique

[0002] High-brightness AlGaInP light-emitting diodes have been widely used in high-efficiency solid-state lighting fields, such as display screens, automotive lights, backlights, traffic lights, landscape lighting, etc. Since the forbidden band width of the conventional GaAs substrate is narrower than that of AlGaInP, the photons emitted downward from the active region will be absorbed, resulting in a significant reduction in luminous efficiency. In order to prevent the photons emitted downward from being absorbed and improve the luminous efficiency, a GaP substrate with a wider band gap than AlGaInP can be used to replace the GaAs substrate. However, this process technology has the disadvantages of complicated equipment, low yield, and high manufacturing cost. In view of th...

Examples

Embodiment Construction

[0025] The present invention will be further described below in conjunction with the drawings and embodiments.

[0026] Such as figure 2 As shown, the present invention uses a Si substrate 200 as a permanent substrate and has two main surfaces, an upper and a lower surface. Metal Au or Ag is formed on the upper surface of the adhesive layer 201. The mirror layer 110 is formed on the bonding layer 201, and its material is a SiO2 / Ag double-layer structure; the p-GaP window layer 109 is formed on the mirror layer 110; the p-AlGaInP confinement layer 108 is formed on the p-GaP window On the layer 109; the multiple quantum well (MQW) active layer 107 is formed on the p-AlGaInP confinement layer 108, the material of which is AlGaInP; the n-AlGaInP confinement layer 106 is formed on the multiple quantum well (MQW) active layer 107 On; the n-GaAs ohmic contact layer 105 is formed on the n-AlGaInP confinement layer 106, and its thickness is preferably 300 angstroms, and the doping conc...

Technical field

[0001] The invention belongs to the field of optoelectronic technology, especially the manufacturing technology of reverse polarity AlGaInP-based light-emitting diodes. Background technique

[0002] High-brightness AlGaInP light-emitting diodes have been widely used in high-efficiency solid-state lighting fields, such as display screens, automotive lights, backlights, traffic lights, landscape lighting, etc. Since the forbidden band width of the conventional GaAs substrate is narrower than that of AlGaInP, the photons emitted downward from the active region will be absorbed, resulting in a significant reduction in luminous efficiency. In order to prevent the photons emitted downward from being absorbed and improve the luminous efficiency, a GaP substrate with a wider band gap than AlGaInP can be used to replace the GaAs substrate. However, this process technology has the disadvantages of complicated equipment, low yield, and high manufacturing cost. In view of th...

Examples

Embodiment Construction

[0025] The present invention will be further described below in conjunction with the drawings and embodiments.

[0026] Such as figure 2 As shown, the present invention uses a Si substrate 200 as a permanent substrate and has two main surfaces, an upper and a lower surface. Metal Au or Ag is formed on the upper surface of the adhesive layer 201. The mirror layer 110 is formed on the bonding layer 201, and its material is a SiO2 / Ag double-layer structure; the p-GaP window layer 109 is formed on the mirror layer 110; the p-AlGaInP confinement layer 108 is formed on the p-GaP window On the layer 109; the multiple quantum well (MQW) active layer 107 is formed on the p-AlGaInP confinement layer 108, the material of which is AlGaInP; the n-AlGaInP confinement layer 106 is formed on the multiple quantum well (MQW) active layer 107 On; the n-GaAs ohmic contact layer 105 is formed on the n-AlGaInP confinement layer 106, and its thickness is preferably 300 angstroms, and the doping conc...

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