4H-SiC metal semiconductor field effect transistor having double high gates

A field-effect transistor and metal-semiconductor technology, which is applied in the field of 4H-SiC metal-semiconductor field-effect transistors, can solve the problems that the saturation leakage current has not been substantially improved, the effective mobility of carriers has decreased, and the saturation current has degraded, etc. Maximum output power density, increase in breakdown voltage, and the effect of increasing breakdown voltage

CN105932047AActive Publication Date: 2016-09-07XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2016-09-07

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Abstract

The invention relates to a 4H-SiC metal semiconductor field effect transistor having double high gates. The 4H-SiC metal semiconductor field effect transistor comprises a 4H-SiC semi-insulating substrate, a P-type buffer layer and an N-type channel layer which are arranged from the bottom to the top in turn. The two sides of the N-type channel layer are respectively provided with a source cap layer and a drain cap layer. The surfaces of the source cap layer and the drain cap layer are respectively provided with a source electrode and a drain electrode. A gate electrode is formed on one side which is close to the source cap layer and arranged above the N-type channel layer. A left channel concave region, a right channel concave region and a middle channel concave region are formed at the left side, the right side and the middle of the N-type channel by the gate electrode. A left high gate region and a right high gate region are formed between the surface of the channel and the gate electrode. The advantages of the 4H-SiC metal semiconductor field effect transistor are that drain current is enhanced, breakdown voltage is enabled and the frequency characteristics are improved.
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Description

technical field

[0001] The invention belongs to the technical field of field effect transistors, in particular to a 4H-SiC metal semiconductor field effect transistor with double high gates. Background technique

[0002] SiC materials have outstanding material and electrical properties such as wide band gap, high breakdown electric field, high saturated electron migration velocity, and high thermal conductivity, making them suitable for high-frequency and high-power device applications, especially high temperature, high voltage, aerospace, satellite, etc. It has great potential in high-frequency high-power device applications in harsh environments. In SiC allomorphs, the electron mobility of 4H-SiC with hexagonal close-packed wurtzite structure is nearly three times that of 6H-SiC, so 4H-SiC materials are used in high-frequency and high-power devices, especially in metal-semiconductor fields. Effect transistor (MESFET) occupies a major position in the application.

[0003] ...

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the embodiments and with reference to the accompanying drawings.

[0019] See figure 1 .

[0020] A 4H-SiC metal-semiconductor field-effect transistor with a double-high gate, including a 4H-SiC semi-insulating substrate 1, a P-type buffer layer 2, an N-type channel layer 3, and an N-type channel layer 3 from bottom to top On both sides are the source cap layer 4 and the drain cap layer 5 respectively, the surfaces of the source cap layer 4 and the drain cap layer 5 are the source electrode 6 and the drain electrode 7 respectively, above the N-type channel layer 3 and close to the source cap A gate electrode 10 is formed on one side of the layer, and the gate electrode 10 forms a left channel recessed area 8, a right channel recessed area 9, and a middle channel recessed area 11 on the left, right, and middle of the N-type channel 3, respectively. A left upper gate region 13 and a right upper ga...