Shielding ring, shielding device, electroplating equipment and electroplating method

Abstract

The present invention discloses a shielding ring, a shielding device, an electroplating device and an electroplating method. The shielding ring is used for wafer electroplating. The shielding ring includes a spoiler, which is connected to the inner ring surface of the shielding ring. The spoiler is used to disturb the plating liquid of the wafer so that the wafer is uniformly electroplated. The present invention arranges the shielding ring before the wafer so that the plating liquid needs to flow through the shielding ring first. When the plating liquid flows through the shielding ring, the spoiler located on the inner ring surface of the shielding ring can cause the plating liquid to rotate, which is beneficial to improve the uniformity of the wafer electroplating layer.

Description

Technical Field

[0001] The present invention relates to the field of electroplating, and in particular to a shielding ring, a shielding device, an electroplating device and an electroplating method. Background Art

[0002] Wafer electroplating is an important process step in the wet process of chip manufacturing. Wafer electroplating includes horizontal electroplating and vertical electroplating. In the wafer electroplating process, the uniformity of the coating thickness is an important aspect of the electroplating effect. All electroplating equipment manufacturers are constantly improving their equipment to improve the uniformity of their coating thickness.

[0003] Currently, there are two types of wafers for chip manufacturing: 8-inch (200mm diameter) and 12-inch (300mm diameter). The larger the wafer, the more difficult it is to achieve uniform thickness throughout the wafer during electroplating.

[0004] There are many and complex factors that affect the uniformity of wafer coating thickness, among which the main factors are the influence of electric field and fluid field. Generally speaking, the unevenness of coating thickness mainly refers to the large difference in thickness between the edge of the wafer and its interior. In order to reduce this difference, a solid shielding plate at the edge of the cathode is generally used to shield part of the electric lines at the edge of the wafer. Although this method is beneficial to improving the thickness uniformity, the problem of uniformity of the coating thickness of the entire wafer still exists locally on the wafer. The industry has not yet found a good solution to improve the local uniformity of wafer coating. Especially in vertical electroplating, since the wafer is difficult to rotate during electroplating, the problem of local coating thickness uniformity is particularly prominent. Summary of the invention

[0005] The technical problem to be solved by the present invention is to overcome the above-mentioned defects in the prior art and to provide a shielding ring, a shielding device, an electroplating device and an electroplating method.

[0006] The present invention solves the above technical problems through the following technical solutions:

[0007] A shielding ring is used for wafer electroplating. Its characteristic is that the shielding ring includes a spoiler, which is connected to the inner ring surface of the shielding ring. The spoiler is used to disturb the plating liquid of the wafer so that the wafer is evenly plated.

[0008] In this embodiment, by adopting the above structure, by setting the shielding ring in front of the wafer, the plating liquid needs to flow through the shielding ring first. When the plating liquid flows through the shielding ring, the spoiler located on the inner ring surface of the shielding ring can cause the plating liquid to rotate, which is beneficial to improve the uniformity of the wafer electroplating layer.

[0009] Preferably, the spoiler has a spoiler surface, the spoiler surface extends toward the axis of the inner annular surface, and from the connection between the spoiler and the inner annular surface to the end of the spoiler, the area of ​​the projection of the spoiler surface in a plane perpendicular to the inner annular surface is first large and then small, first small and then large, remains unchanged, or increases and decreases alternately.

[0010] In this embodiment, by adopting the above structure, by setting a spoiler surface on the spoiler, the spoiler can better disturb the flow of the plating solution; by designing the spoiler surface to extend along the axial direction of the inner annular surface, the area of ​​the spoiler surface is increased, so that the spoiler surface can contact more plating solution, which is conducive to improving the disturbance efficiency of the spoiler surface; by designing the spoiler surface to be projected in a plane perpendicular to the inner annular surface, the area of ​​the spoiler surface is first large and then small, that is, during the extension process of the spoiler surface, the spoiler surface is first twisted, so that the area of ​​the projection of the spoiler surface in the plane perpendicular to the inner annular surface gradually increases; and then the spoiler surface is reversely twisted, so that the area of ​​the projection of the spoiler surface in the plane perpendicular to the inner annular surface gradually decreases. This design form of the spoiler surface enables the spoiler surface to contact more plating solution, which is conducive to improving the disturbance efficiency of the spoiler surface. In other embodiments, the area of ​​the projection of the spoiler surface in the plane perpendicular to the inner annular surface can also be designed to be small and then large, the size remains unchanged, or the size changes alternately, etc., and the above effect can be achieved.

[0011] Preferably, the end of the spoiler also extends along the axis of the inner annular surface in a direction away from the shielding ring.

[0012] In this embodiment, by adopting the above structure, by designing the end of the spoiler to extend along the axis of the inner ring surface in a direction away from the shielding ring, the spoiler surface not only disturbs the electrolyte in the shielding ring, but also makes the spoiler surface more three-dimensional, which is conducive to improving the disturbance efficiency of the spoiler surface. In addition, it is also conducive to controlling the angle at which the plating solution flows out of the spoiler surface, so that the plating solution flows in a preset direction.

[0013] Preferably, the shielding ring has one or more spoilers. When there are multiple spoilers, the spoilers have the same or different shapes, and the spoilers are arranged on the inner ring surface at uniform or non-uniform intervals.

[0014] In the present embodiment, by adopting the above structure, by arranging a plurality of spoilers evenly at intervals on the inner annular surface, it is beneficial to improve the disturbance efficiency of the spoiler surface. In other embodiments, it can also be designed as one spoiler, it can also be designed as a plurality of spoilers, and a plurality of spoilers can also be arranged at non-uniform intervals on the inner annular surface. Of course, the shapes of the plurality of spoilers can be the same or different, and the above-mentioned effect can be achieved.

[0015] Preferably, the spoiler has a shape of hollow, porous, toothed, fan-shaped or paddle-shaped.

[0016] In this embodiment, by adopting the above structure and utilizing a hollow, porous, toothed, fan-shaped or paddle-shaped spoiler, it is beneficial to improve the disturbance efficiency of the spoiler surface.

[0017] Preferably, the shielding ring further comprises a connecting portion, and the connecting portion is arranged between the spoilers so that the spoilers are connected into an integral structure.

[0018] In this embodiment, by adopting the above structure, by providing a connecting portion, and connecting the spoilers by the connecting portion, it is beneficial to improve the stability of the spoilers, thereby facilitating better control of the flow direction of the electrolyte. In addition, the connecting portion, the inner ring surface of the shielding ring, and the space between the two spoilers form a grid shape, and the grid-shaped space can also enhance the disturbing effect on the electrolyte.

[0019] Preferably, the shielding ring is made of insulating material. Preferably, the insulating material is one or more of polypropylene, high-density polyethylene, polyvinylidene fluoride or polytetrafluoroethylene, and the multiple insulating materials are connected by plastic welding.

[0020] In this embodiment, by adopting the above structure, using a shielding ring made of insulating material, it is helpful to reduce the interference of the shielding ring on the electric field lines in the electroplating solution. Using materials such as polypropylene, high-density polyethylene, polyvinylidene fluoride or polytetrafluoroethylene to make the shielding ring is helpful to increase the use range of the shielding ring and reduce the cost of the shielding ring.

[0021] Preferably, the outer side surface of the shielding ring is circular, and the diameter of the outer side surface is 95%-110% of the diameter of the wafer; and / or the diameter of the inner ring surface is 80%-90% of the diameter of the outer side surface.

[0022] In this embodiment, by adopting the above structure, by associating the outer side surface and the inner ring surface of the shielding ring with the diameter of the wafer, the shielding ring can be designed accordingly to address the problem of thicker electroplating layer at the edge of the wafer, thereby reducing the thickness of the electroplating layer at the edge of the wafer, which is beneficial to improving the uniformity of the electroplating layer of the wafer.

[0023] Preferably, the diameter of the outer side surface is 327 mm; and / or the diameter of the inner annular surface is 277 mm.

[0024] In this embodiment, by adopting the above structure and designing the size of the shielding ring to the above size, the thickness of the electroplating layer at the edge of the wafer can be effectively reduced, which is beneficial to improving the uniformity of the electroplating layer of the wafer. In this embodiment, the uniformity of the thickness of the electroplating layer of a 300mm wafer can reach 2%.

[0025] Preferably, a groove is provided on the outer side surface of the shielding ring, and the cross section of the groove is arc-shaped.

[0026] Preferably, the thickness between the inner annular surface and the outer side surface is uniform; or the thickness between the inner annular surface and the outer side surface becomes thinner from inside to outside in the radial direction;

[0027] Preferably, the length of the spoiler is in the range of 13mm-15mm;

[0028] Preferably, the radial length of the spoiler along the inner annular surface ranges from 10 mm to 13 mm.

[0029] In this embodiment, by adopting the above structure and utilizing the groove, it is helpful to fix the shielding ring, or to make the shielding ring rotatably fixed. It is helpful to reduce the requirements of the shielding ring on the manufacturing process and reduce the manufacturing cost of the shielding ring. By designing the spoiler within the above length range, the disturbance effect of the spoiler on the plating solution is within a preset range, which is helpful to improve the disturbance efficiency.

[0030] Preferably, the shielding ring further comprises a driving part, wherein the driving part is arranged on a side surface of the shielding ring, and the driving part is used to receive the action of the electroplating solution to rotate the shielding ring.

[0031] In this embodiment, by adopting the above structure and utilizing the driving unit, the shielding ring can rotate, so that the flow direction of the plating solution can be better controlled, which is beneficial to improving the uniformity of the plating solution and the electroplating quality of the wafer.

[0032] Preferably, the driving parts are arranged at uniform intervals along the circumference of the inner annular surface.

[0033] In this embodiment, by adopting the above structure, the driving part is arranged at uniform intervals in the circumferential direction, which is conducive to the driving part generating uniform driving force, so that the shielding ring rotates at a uniform speed, which is conducive to improving the controllability of the flow direction of the electroplating solution and improving the electroplating quality of the wafer. The driving part can be specifically designed as a rectangular block, and the rectangular block is arranged on the side of the shielding ring.

[0034] A shielding device is used for wafer electroplating, and its characteristic is that the shielding device comprises the shielding ring as described above.

[0035] In this embodiment, by adopting the above structure and utilizing a shielding device including a shielding ring, the shielding ring can be installed to the electroplating equipment more simply and reliably, which is also beneficial to ensuring the disturbing effect of the shielding ring on the electroplating liquid.

[0036] Preferably,

[0037] The shielding device also includes a fixing portion, which has a through hole, and the shielding ring is rotatably installed in the through hole, and the fixing portion is used to install the shielding ring in the electroplating equipment; and / or, the shielding device also includes a power portion, and the power portion acts on the shielding ring to rotate the shielding ring; and / or, the shielding device also has a sink groove, and the shielding ring is clamped in the sink groove.

[0038] In this embodiment, by adopting the above structure, the reliability of the shielding ring is improved by using the fixing part, and it is also convenient to install the shielding ring to the electroplating equipment. The sinking groove is used so that the shielding ring can be better fitted to the bottom of the sinking groove, which is conducive to improving the stability of the shielding ring.

[0039] Preferably, the shielding device further comprises a ball, and the ball is arranged between the shielding ring and the sink.

[0040] In this embodiment, by adopting the above structure and utilizing the balls, the resistance of the shielding ring during the rotation process is reduced, which is also beneficial to improving the uniformity of the rotation speed of the shielding ring.

[0041] Preferably, the shielding device further comprises a power unit, and the power unit acts on the shielding ring to rotate the shielding ring.

[0042] In this embodiment, by adopting the above structure and utilizing the power unit, the rotation of the shielding ring can be better controlled, which is beneficial to adjusting the rotation speed of the shielding ring and improving the uniformity of the electroplating layer of the wafer.

[0043] Preferably, the power unit includes a driving wheel, a side surface of the driving wheel is a friction surface, and a side surface of the shielding ring abuts against the friction surface. When the driving wheel rotates, the friction surface acts on the shielding ring to rotate the shielding ring. Preferably, when the shielding device includes both the fixed part and the power unit, the driving wheel is rotatably connected to the fixed part.

[0044] In this embodiment, by adopting the above structure, the friction between the driving wheel and the shielding ring is used to drive the shielding ring to rotate, thereby simplifying the design of the power unit.

[0045] Preferably, the outer side surface of the driving wheel has a belt groove.

[0046] In this embodiment, by adopting the above structure and providing a belt groove on the outer side of the driving wheel, the driving wheel can be connected to the motor or other power components by a belt, thereby realizing the rotation of the driving wheel. The structural form of the driving wheel is also simplified.

[0047] Preferably, the power unit further comprises an auxiliary wheel, and the auxiliary wheel is pressed onto a side surface of the shielding ring.

[0048] In this embodiment, by adopting the above structure, the shielding ring is pressed by the auxiliary wheel, which is beneficial to improve the stability of the shielding ring and prevent the shielding ring from being deformed due to excessive force.

[0049] Preferably, there are two auxiliary wheels, and the distances between the two auxiliary wheels and the driving wheel are equal.

[0050] In this embodiment, by adopting the above structure and designing the two auxiliary wheels to be at an equal distance from the driving wheel, the stress state of the shielding ring is optimized.

[0051] Preferably, the fixing portion includes a clamping plate and a connecting plate, wherein the clamping plate is arranged on one side of the connecting plate, and both ends of the clamping plate have clamping grooves, and the clamping grooves are used to clamp the electroplating equipment; and the through hole is arranged at the center of the connecting plate.

[0052] In this embodiment, by adopting the above structure, the design of the fixing part is simplified by using the clamping slot and the clamping plate.

[0053] An electroplating device comprises a cathode and an anode, and is characterized in that the electroplating device also comprises the shielding device as described above.

[0054] Preferably, the shielding device is arranged between the cathode and the anode, and the end of the spoiler is directed toward the cathode.

[0055] In this embodiment, by adopting the above structure and using the electroplating equipment including the shielding device, it is helpful to adjust the flow of the electroplating solution, thereby helping to reduce the thickness of the electroplating layer at the edge of the wafer and improve the uniformity of the thickness of the electroplating layer of the wafer. In this embodiment, the uniformity of the thickness of the electroplating layer of a 300 mm wafer can reach 2%.

[0056] Preferably, the shielding device is closer to the cathode than to the anode.

[0057] In this embodiment, by adopting the above structure, the shielding device is arranged at a position closer to the cathode, which is conducive to more effectively adjusting the thickness of the wafer electroplating layer.

[0058] Preferably, the distance between the shielding device and the cathode is adjustable; and / or, the distance between the shielding device and the cathode is in the range of 3mm-10mm; and / or, the electroplating equipment comprises a plurality of the shielding devices, and the plurality of the shielding devices are arranged in parallel.

[0059] In this embodiment, by adopting the above structure, the distance between the shielding device and the cathode is designed to be adjustable, which is conducive to timely adjusting the distance between the shielding device and the cathode according to actual conditions, and is conducive to improving the use range of the electroplating equipment. Using multiple shielding devices together is conducive to more effectively adjusting the thickness of the wafer electroplating layer.

[0060] Preferably, when looking from the shielding device toward the cathode, the spoiler of the shielding ring rotates in a clockwise direction; the shielding ring rotates at a speed of 100RPM-200RPM.

[0061] In this embodiment, by adopting the above structure and designing the rotation speed of the shielding ring to be 100RPM-200RPM, it is beneficial to improve the uniformity of the electroplating layer on the wafer.

[0062] An electroplating method is characterized in that electroplating is performed using the electroplating equipment as described above.

[0063] In this embodiment, by adopting the above method, the wafer is electroplated using an electroplating device containing a shielding ring, which is beneficial to improving the uniformity of the wafer electroplating layer.

[0064] Preferably, during the wafer electroplating process, the shielding device is used for shielding.

[0065] On the basis of being in accordance with the common sense in the art, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present invention.

[0066] The positive and progressive effects of the present invention are:

[0067] The present invention arranges a shielding ring before the wafer so that the plating solution needs to flow through the shielding ring first. When the plating solution flows through the shielding ring, the spoiler located on the inner ring surface of the shielding ring can cause the plating solution to rotate, which is beneficial to improving the uniformity of the wafer electroplating layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] Figure 1 This is a schematic diagram of the structure of the shielding ring of Example 1 of the present invention.

[0069] Figure 2 Another schematic diagram of the structure of the shielding ring of Example 1 of the present invention.

[0070] Figure 3 This is a schematic diagram of the structure of the shielding ring of Example 2 of the present invention.

[0071] Figure 4 This is a schematic diagram of the structure of the shielding device of Example 3 of the present invention.

[0072] Figure 5 Another schematic structural diagram of the shielding device according to Embodiment 3 of the present invention.

[0073] Figure 6 This is a schematic diagram of the structure of the shielding device of Example 4 of the present invention.

[0074] Figure 7 This is a schematic diagram of the structure of the shielding device of Example 5 of the present invention.

[0075] Description of reference numerals:

[0076] Shielding Ring 100

[0077] Spoiler 11

[0078] Spoiler surface 111

[0079] Inner ring surface 12

[0080] Driving unit 13

[0081] Shielding device 200

[0082] Fixed part 21

[0083] Card slot 211

[0084] Driving wheel 22

[0085] Training wheels 23 DETAILED DESCRIPTION

[0086] The present invention will be described more clearly and completely below by way of embodiments in conjunction with the accompanying drawings, but the present invention is not limited to the scope of the embodiments.

[0087] Example 1

[0088] like Figure 1 and Figure 2 As shown, this embodiment is a shielding ring 100, which is used for wafer electroplating. The shielding ring 100 includes a spoiler 11, and the spoiler 11 is connected to the inner ring surface 12 of the shielding ring 100. The spoiler 11 is used to disturb the plating liquid of the electroplated wafer so that the wafer is uniformly plated. In this embodiment, by adopting the above structure, by arranging the shielding ring 100 before the wafer, the plating liquid needs to flow through the shielding ring 100 first. When the plating liquid flows through the shielding ring 100, the spoiler 11 located on the inner ring surface 12 of the shielding ring 100 can cause the plating liquid to rotate, which is beneficial to improve the uniformity of the wafer electroplating layer.

[0089] As a preferred embodiment, the spoiler 11 may also have a spoiler surface 111, which extends toward the axis of the inner annular surface 12. From the connection between the spoiler 11 and the inner annular surface 12 to the end of the spoiler 11, the projection area of ​​the spoiler surface 111 in the plane perpendicular to the inner annular surface 12 is first large and then small. In this embodiment, the spoiler 11 is provided with a spoiler surface 111, so that the spoiler 11 can better disturb the flow of the electroplating solution; in this embodiment, the spoiler surface 111 is designed to extend along the axial direction of the inner annular surface 12, so that the area of ​​the spoiler surface 111 is increased, so that the spoiler surface 111 can contact more electroplating solution, which is conducive to improving the disturbance efficiency of the spoiler surface 111; the spoiler surface 111 is designed to have a projected area in a plane perpendicular to the inner annular surface 12 that is first large and then small, that is, during the extension process of the spoiler surface 111, the spoiler surface 111 is first twisted, so that the projected area of ​​the spoiler surface 111 in the plane perpendicular to the inner annular surface 12 gradually increases; and then the spoiler surface 111 is reversely twisted, so that the projected area of ​​the spoiler surface 111 in the plane perpendicular to the inner annular surface 12 gradually decreases. This design form of the spoiler surface 111 enables the spoiler surface 111 to contact more electroplating solution at the same time, which is conducive to improving the disturbance efficiency of the spoiler surface 111. In other embodiments, the projection area of ​​the spoiler surface 111 in the plane perpendicular to the inner annular surface may be designed to change regularly or irregularly, such as first small and then large, or remain unchanged in size, or change from large to small alternately, to achieve the above-mentioned effect.

[0090] As an implementation mode, the end of the spoiler 11 may also extend along the axis of the inner annular surface 12 in a direction away from the shielding ring 100. In this embodiment, by designing the end of the spoiler 11 to extend along the axis of the inner annular surface 12 in a direction away from the shielding ring 100, the spoiler surface 111 not only disturbs the electrolyte in the shielding ring 100, but also makes the spoiler surface 111 more three-dimensional, which is conducive to improving the disturbance efficiency of the spoiler surface 111. In addition, it is also conducive to controlling the angle at which the plating solution flows out of the spoiler surface 111, so that the plating solution flows in a preset direction.

[0091] In this embodiment, if Figure 1 As shown, the shielding ring 100 may also have a plurality of spoilers 11, and the plurality of spoilers 11 are evenly spaced on the inner ring surface 12. This embodiment is conducive to improving the disturbance efficiency of the spoiler surface 111 by evenly arranging the plurality of spoilers 11 on the inner ring surface 12. In other embodiments, it may be designed as one spoiler 11, or multiple spoilers 11 may be designed, and the plurality of spoilers 11 may also be unevenly spaced on the inner ring surface 111. Of course, the shapes of the plurality of spoilers 11 may be the same or different, and the above-mentioned effects can be achieved.

[0092] In other embodiments, the shape of the spoiler 11 can also be designed to be hollow, porous, toothed, fan-shaped or paddle-shaped. This embodiment uses a hollow, porous, toothed, fan-shaped or paddle-shaped spoiler 11, which is conducive to improving the disturbance efficiency of the spoiler surface 111.

[0093] In order to improve the stability of the spoilers 11, the shielding ring 100 may further include a connecting portion, which is arranged between the spoilers 11 so that the spoilers 11 are connected into an integral structure. In this embodiment, by providing a connecting portion and connecting the spoilers 11 by the connecting portion, it is beneficial to improve the stability of the spoilers 11, thereby facilitating better control of the flow direction of the electrolyte. In addition, the connecting portion, the inner annular surface 12 of the shielding ring 100, and the space between the two spoilers 11 form a grid-like space, and the grid-like space can also enhance the disturbing effect on the electrolyte.

[0094] As a preferred embodiment, the shielding ring 100 can also be made of an insulating material. The shielding ring 100 of the present embodiment uses an insulating material, which is beneficial to reducing the interference of the shielding ring 100 on the electric field lines in the electroplating solution. Specifically, the insulating material is one or more of polypropylene, high-density polyethylene, polyvinylidene fluoride or polytetrafluoroethylene, and the various insulating materials can be connected by a plastic welding process. The present embodiment uses materials such as polypropylene, high-density polyethylene, polyvinylidene fluoride or polytetrafluoroethylene to make the shielding ring 100, which is beneficial to increasing the scope of use of the shielding ring 100 and also beneficial to reducing the cost of the shielding ring 100.

[0095] In this embodiment, the outer side of the shielding ring 100 can also be designed to be circular, and the diameter of the outer side can also be designed to be 95%-110% of the diameter of the wafer to be plated. The diameter of the inner ring surface 12 can also be 80%-90% of the diameter of the outer side. In this embodiment, by associating the outer side and the inner ring surface 12 of the shielding ring 100 with the diameter of the wafer, the shielding ring 100 can be designed accordingly for the problem of thick electroplating layer at the edge of the wafer, which can reduce the thickness of the electroplating layer at the edge of the wafer, which is conducive to improving the uniformity of the electroplating layer of the wafer. Specifically, the diameter of the outer side of the shielding ring 100 is designed to be 327mm, and the diameter of the inner ring surface 12 is 277mm. In this embodiment, by designing the size of the shielding ring 100 to the above size, the thickness of the electroplating layer at the edge of the wafer can be effectively reduced, which is conducive to improving the uniformity of the electroplating layer of the wafer. In this embodiment, the uniformity of the thickness of the electroplating layer of a 300mm wafer can reach 2%.

[0096] In other embodiments, the outer side of the shielding ring 100 is provided with a groove, and the cross section of the groove is arc-shaped. This embodiment utilizes the groove to facilitate fixing the shielding ring 100, or to enable the shielding ring 100 to be fixed rotatably.

[0097] In order to reduce the requirements of the shielding ring 100 on the manufacturing process, the thickness between the inner ring surface 12 and the outer side surface of the shielding ring 100 can be uniform; or the thickness between the inner ring surface 12 and the outer side surface of the shielding ring 100 can be thinner from the inside to the outside in the radial direction. This embodiment is conducive to reducing the requirements of the shielding ring 100 on the manufacturing process and reducing the manufacturing cost of the shielding ring 100.

[0098] As a specific implementation, the length of the spoiler 11 may be in the range of 13 mm to 15 mm. The length of the spoiler 11 along the radial direction of the inner annular surface 12 may also be in the range of 10 mm to 13 mm. In this embodiment, by designing the spoiler 11 within the above-mentioned length range, the disturbance effect of the spoiler 11 on the electroplating solution is within a preset range, which is conducive to improving the disturbance efficiency.

[0099] Example 2

[0100] like Figure 3 As shown, this embodiment is a shielding ring 100, which is basically the same as Embodiment 1, except that: the shielding ring 100 of this embodiment further includes a driving part 13, which is arranged on the side of the shielding ring 100, and is used to receive the action of the electroplating liquid to rotate the shielding ring 100. This embodiment uses the driving part 13 to enable the shielding ring 100 to rotate, so that the flow direction of the electroplating liquid can be better controlled, which is beneficial to improving the uniformity of the electroplating liquid and the electroplating quality of the wafer.

[0101] As an implementation mode, the driving parts 13 are arranged at uniform intervals along the circumference of the inner ring surface 12. In this embodiment, the driving parts 13 are arranged at uniform intervals along the circumference, which is conducive to the driving parts 13 generating uniform driving force, so that the shielding ring 100 rotates at a uniform speed, which is conducive to improving the controllability of the flow direction of the electroplating solution and improving the electroplating quality of the wafer. The driving part 13 can be specifically designed as a rectangular block, and the rectangular block is arranged on the side of the shielding ring 100.

[0102] Of course, in other embodiments, during the wafer electroplating process, as long as there is relative motion between the wafer and the shielding ring 100 (usually the planar rotation of the wafer), even if the shielding ring 100 itself does not move, the uniform electroplating effect can still be achieved. When there is relative motion between the wafer and the shielding ring 100, the number of spoilers 11 on the shielding ring 100 may be 1-2.

[0103] Example 3

[0104] like Figure 4 and Figure 5 As shown, this embodiment is a shielding device 200 for wafer electroplating. The shielding device 200 includes a shielding ring 100 as in Embodiment 1 or Embodiment 2. The shielding ring 100 may also be as Figure 1-3This embodiment utilizes the shielding device 200 including the shielding ring 100, so that the shielding ring 100 can be installed on the electroplating equipment more simply and reliably, and is also conducive to ensuring the disturbing effect of the shielding ring 100 on the electroplating solution.

[0105] As an implementation mode, the shielding device 200 may further include a fixing portion 21, the fixing portion 21 having a through hole, the shielding ring 100 being rotatably installed in the through hole, and the fixing portion 21 being used to install the shielding ring 100 into the electroplating equipment. This embodiment utilizes the fixing portion 21 to improve the reliability of the shielding ring 100 and also facilitates the installation of the shielding ring 100 into the electroplating equipment.

[0106] In this embodiment, the fixing part 21 may also include a card plate and a connecting plate. The card plate is arranged on one side of the connecting plate, and both ends of the card plate have card slots 211, which are used to connect the electroplating equipment; and the through hole is arranged in the center of the connecting plate. This embodiment simplifies the design of the fixing part 21 by using the card slot 211 and the card plate.

[0107] As an implementation, the shielding device 200 may also have a sinking groove, and the shielding ring 100 is clamped in the sinking groove. This embodiment utilizes the sinking groove so that the shielding ring 100 can better fit on the bottom of the sinking groove, which is beneficial to improving the stability of the shielding ring 100.

[0108] In other embodiments, the shielding device 200 further includes a power unit, which acts on the shielding ring 100 to rotate the shielding ring 100. This embodiment utilizes the power unit to better control the rotation of the shielding ring 100, which is beneficial to adjusting the rotation speed of the shielding ring 100 and improving the uniformity of the electroplating layer of the wafer.

[0109] In this embodiment, if Figure 4 and Figure 5 As shown, the power unit may also include a driving wheel 22, the side of the driving wheel 22 is a friction surface, and the side of the shielding ring 100 abuts against the friction surface. When the driving wheel 22 rotates, the friction surface acts on the shielding ring 100 to rotate the shielding ring 100. This embodiment utilizes the friction between the driving wheel 22 and the shielding ring 100 to drive the shielding ring 100 to rotate, thereby simplifying the design of the power unit. As a preferred embodiment, when the shielding device 200 includes the fixed part 21 and the power unit at the same time, the power unit is selected as the driving wheel 22, and the driving wheel 22 and the fixed part 21 can also be designed to be rotatably connected.

[0110] As an implementation method, the outer side of the driving wheel 22 may also have a belt groove. In this embodiment, by providing a belt groove on the outer side of the driving wheel 22, the driving wheel 22 can be connected to the motor or other power components by a belt, thereby realizing the rotation of the driving wheel 22. The structure of the driving wheel 22 is also simplified.

[0111] As a preferred embodiment, the power unit further includes an auxiliary wheel 23, which is pressed against the side of the shielding ring 100. This embodiment uses the auxiliary wheel 23 to press the shielding ring 100, which is beneficial to improve the stability of the shielding ring 100 and prevent the shielding ring 100 from being deformed due to excessive force.

[0112] Specifically, Figure 4 and Figure 5 As shown, in this embodiment, there are two auxiliary wheels 23, and the distance between the two auxiliary wheels 23 and the driving wheel 22 is equal. In this embodiment, the stress state of the shielding ring 100 is optimized by designing the two auxiliary wheels 23 to be at the same distance from the driving wheel 22.

[0113] As an implementation method, under the condition of electroplating a 10um thick copper film on the entire wafer (12-inch wafer), the thickness uniformity of the wafer edge before and after shielding is detected. Among them, when the shielding device 200 of this embodiment is not used, the thickness difference between the highest point and the lowest point in the circular ring range of 10mm inward from the outer edge of the wafer is 3um; and when the shielding device 200 of this embodiment is used, under the condition of the shielding ring 100 rotating speed of 60rpm, the thickness difference between the highest point and the lowest point in the circular ring range of 10mm inward from the outer edge of the wafer is reduced to 1.6um.

[0114] Example 4

[0115] like Figure 6 As shown, this embodiment is a shielding device 200. This embodiment is basically the same as the third embodiment, except that the projection area of ​​the spoiler 11 of the shielding ring 10 of this embodiment in the plane shown in the figure is larger than that of the spoiler 11 of the third embodiment. Figure 5 The projected area in the plane shown. Specifically, the projected area of ​​the spoiler 11 of this embodiment is twice the projected area of ​​the spoiler 11 of Example 3. This embodiment increases the projected area of ​​the spoiler 11, so that the spoiler 11 can produce a larger shielding area. When the wafer is electroplated, the larger shielding area is conducive to increasing the influence of the spoiler 11 on the plating solution, which is conducive to the shielding device 200 to better control the flow direction of the plating solution, which is conducive to improving the uniformity of the plating solution, and is conducive to improving the electroplating quality of the wafer.

[0116] As a specific implementation, the width of the spoiler 11 can be increased in the circumferential direction of the shielding ring 100. Compared with the spoiler 11 in Example 3, the width of the spoiler 11 in this embodiment can be increased by 1 times, that is, the width of the spoiler 11 in this embodiment is twice the width of the spoiler 11 in Example 3. Of course, in other embodiments, the shielding area can be increased by increasing the length of the spoiler 11 or increasing the length and width at the same time, which is conducive to improving the influence of the spoiler 11 on the electroplating solution, thereby helping the shielding device 200 to better control the flow direction of the electroplating solution, improve the uniformity of the electroplating solution, and improve the electroplating quality of the wafer.

[0117] As an implementation method, under the condition of electroplating a 10um thick copper film on the entire wafer (12-inch wafer), the thickness uniformity of the wafer edge before and after shielding is detected. Among them, when the shielding device 200 of this embodiment is not used, the thickness difference between the highest point and the lowest point in the circular ring range of 10mm inward from the outer edge of the wafer is 3um; and when the shielding device 200 of this embodiment is used, under the condition of the shielding ring 100 rotating speed of 60rpm, the thickness difference between the highest point and the lowest point in the circular ring range of 10mm inward from the outer edge of the wafer is reduced to 0.6um.

[0118] Example 5

[0119] like Figure 7 As shown, this embodiment is a shielding device 200. This embodiment includes the shielding ring 100 in embodiment 2, and the shielding ring 100 can also be as shown in FIG. Figure 3 As shown. This embodiment is basically the same as embodiment 3, except that the shielding ring 100 in the shielding device 200 of this embodiment directly uses the electroplating liquid as power. Since the shielding ring 100 has a driving part 13, the driving part 13 can be acted upon by the electroplating liquid to rotate the shielding ring 100. This embodiment utilizes the driving part 13 to enable the shielding ring 100 to rotate, thereby being able to better control the flow direction of the electroplating liquid, which is beneficial to improving the uniformity of the electroplating liquid and the electroplating quality of the wafer.

[0120] Specifically, the shielding ring 100 of this embodiment is arranged in the sink of the shielding device 200, and the side of the shielding ring 100 is close to the bottom of the sink. The power part of the shielding ring 100 drives the shielding ring 100 to rotate under the action of the plating liquid. This embodiment uses the sink and the power part of the shielding ring 100 to simplify the structural form of the shielding device 200.

[0121] In other embodiments, the shielding device 200 further includes balls, which are arranged between the shielding ring 100 and the sink. This embodiment uses balls to reduce the resistance of the shielding ring 100 during rotation, and is also conducive to improving the uniformity of the rotation speed of the shielding ring 100.

[0122] Example 6

[0123] This embodiment is an electroplating device, which includes a cathode and an anode. The electroplating device also includes a shielding device 200 as in Embodiment 3 or Embodiment 4. The shielding device 200 can also be as Figure 4-Figure 6 shown.

[0124] As a preferred embodiment, the shielding device 200 can be arranged between the cathode and the anode, and the end of the spoiler 11 points to the cathode. This embodiment uses the electroplating equipment including the shielding device 200, which is conducive to adjusting the flow of the electroplating solution, thereby helping to reduce the thickness of the electroplating layer at the edge of the wafer and improving the uniformity of the thickness of the electroplating layer of the wafer. In this embodiment, the uniformity of the thickness of the electroplating layer of a 300mm wafer can reach 2%.

[0125] As an implementation mode, the shielding device 200 may be closer to the cathode than the anode. In this embodiment, the shielding device 200 is arranged closer to the cathode, which is conducive to more effectively adjusting the thickness of the wafer electroplating layer.

[0126] In this embodiment, the distance between the shielding device 200 and the cathode can also be designed to be adjustable. In this embodiment, the distance between the shielding device 200 and the cathode is designed to be adjustable, which is conducive to timely adjusting the distance between the shielding device 200 and the cathode according to actual conditions, and is conducive to improving the use range of the electroplating equipment. Specifically, the range of the distance between the shielding device 200 and the cathode can also be 3mm-10mm.

[0127] In other embodiments, the electroplating equipment includes a plurality of shielding devices 200, and the plurality of shielding devices 200 are arranged in parallel. This embodiment utilizes the plurality of shielding devices 200 to work together, which is conducive to more effectively adjusting the thickness of the electroplating layer of the wafer.

[0128] As an implementation mode, when looking from the shielding device 200 toward the cathode, the spoiler 11 of the shielding ring 100 may also rotate in a clockwise direction.

[0129] As a preferred embodiment, the shielding ring 100 can also rotate at a speed of 100RPM-200RPM. In this embodiment, the shielding ring 100 is designed to rotate at a speed of 100RPM-200RPM, which is beneficial to improving the uniformity of the electroplating layer on the wafer. Specifically, the shielding ring 100 can rotate at a speed of 130RPM, 150RPM or 170RPM.

[0130] Example 7

[0131] This embodiment is an electroplating method, which uses the electroplating equipment in Example 5 for electroplating. In this embodiment, by adopting the above method, using the electroplating equipment containing a shielding ring to electroplate the wafer, it is beneficial to improve the uniformity of the wafer electroplating layer. As an implementation method, during the wafer electroplating process, a shielding device can also be used for shielding.

[0132] Although the specific embodiments of the present invention are described above, it should be understood by those skilled in the art that this is only for illustration and the protection scope of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, but these changes and modifications all fall within the protection scope of the present invention.

Claims

1. A shielding ring for wafer electroplating, characterized in that: The shielding ring includes a spoiler portion, which is connected to the inner ring surface of the shielding ring. The spoiler portion is used to disturb the plating liquid for electroplating the wafer so that the wafer is evenly plated. The shielding ring also includes a driving portion, which is arranged on the side of the shielding ring. The driving portion is used to receive the action of the plating liquid to rotate the shielding ring.

2. The shielding ring according to claim 1, characterized in that The spoiler portion has a spoiler surface, which extends toward the axis of the inner annular surface. From the connection between the spoiler portion and the inner annular surface to the end of the spoiler portion, the area of ​​the projection of the spoiler surface in a plane perpendicular to the inner annular surface is first large and then small, first small and then large, remains unchanged in size, or increases and decreases alternately. The end of the spoiler portion also extends along the axis of the inner annular surface in a direction away from the shielding ring.

3. The shielding ring according to claim 1, characterized in that: The spoiler portion has a spoiler surface, which extends toward the axis of the inner annular surface. From the connection between the spoiler portion and the inner annular surface to the end of the spoiler portion, the projection area of ​​the spoiler surface in a plane perpendicular to the inner annular surface is first large and then small, first small and then large, remains unchanged in size, or increases and decreases alternately. The shielding ring has one or more spoilers. When there are multiple spoilers, the shapes of the multiple spoilers are the same or different, and the multiple spoilers are arranged on the inner annular surface at uniform or non-uniform intervals.

4. The shielding ring according to claim 1, characterized in that: The spoiler has a spoiler surface, which extends toward the axis of the inner annular surface. From the connection between the spoiler and the inner annular surface to the end of the spoiler, the projection area of ​​the spoiler surface in a plane perpendicular to the inner annular surface is first large and then small, first small and then large, remains unchanged in size, or increases and decreases alternately. The shape of the spoiler is one of hollow, porous, toothed, fan-blade or paddle-blade.

5. The shielding ring according to claim 1, characterized in that: The spoiler portion has a spoiler surface, which extends toward the axis of the inner annular surface. From the connection between the spoiler portion and the inner annular surface to the end of the spoiler portion, the projection area of ​​the spoiler surface in a plane perpendicular to the inner annular surface is first large and then small, first small and then large, remains unchanged in size, or increases and decreases alternately. The shielding ring also includes a connecting portion, which is arranged between the spoilers to connect the spoilers into an integral structure.

6. The shielding ring according to claim 1, characterized in that: The spoiler portion has a spoiler surface, which extends toward the axis of the inner annular surface. From the connection between the spoiler portion and the inner annular surface to the end of the spoiler portion, the projection area of ​​the spoiler surface in a plane perpendicular to the inner annular surface is first large and then small, first small and then large, remains unchanged in size, or increases and decreases alternately. The shielding ring is made of insulating material.

7. The shielding ring according to claim 6, characterized in that The insulating material is one or more of polypropylene, high-density polyethylene, polyvinylidene fluoride or polytetrafluoroethylene, and the multiple insulating materials are connected by a plastic welding process.

8. The shielding ring according to claim 1, characterized in that: The spoiler has a spoiler surface, the spoiler surface extends toward the axis of the inner annular surface, and the projection area of ​​the spoiler surface in a plane perpendicular to the inner annular surface from the connection between the spoiler and the inner annular surface to the end of the spoiler is first large and then small, first small and then large, unchanged in size, or alternating between large and small, and the outer side surface of the shielding ring is circular, and the diameter of the outer side surface is 95%-110% of the diameter of the wafer; And / or, the diameter of the inner annular surface is 80%-90% of the diameter of the outer side surface.

9. The shielding ring according to claim 8, characterized in that The diameter of the outer side surface is 327 mm; and / or the diameter of the inner annular surface is 277 mm.

10. The shielding ring according to claim 8, characterized in that: The outer side surface of the shielding ring is provided with a groove, and the cross section of the groove is an arc shape; And / or, the thickness between the inner annular surface and the outer side surface is uniform; or the thickness between the inner annular surface and the outer side surface becomes thinner from the inside to the outside in the radial direction; And / or, the length of the spoiler is in the range of 13 mm to 15 mm; And / or, the length of the spoiler along the radial direction of the inner annular surface ranges from 10 mm to 13 mm.

11. The shielding ring according to claim 1, characterized in that: The driving parts are arranged at uniform intervals along the circumferential direction of the inner annular surface.

12. A shielding device for wafer electroplating, characterized in that: The shielding device comprises the shielding ring according to any one of claims 1-11.

13. The shielding device according to claim 12, characterized in that The shielding device further comprises a fixing portion, the fixing portion having a through hole, the shielding ring being rotatably mounted in the through hole, and the fixing portion being used to install the shielding ring into the electroplating equipment; And / or, the shielding device further comprises a power unit, wherein the power unit acts on the shielding ring to rotate the shielding ring; And / or, the shielding device further has a sink groove, and the shielding ring is clamped in the sink groove.

14. The shielding device according to claim 13, characterized in that The shielding device further comprises a ball, and the ball is arranged between the shielding ring and the sink.

15. The shielding device according to claim 13, characterized in that The power unit comprises a driving wheel, a side surface of the driving wheel is a friction surface, a side surface of the shielding ring abuts against the friction surface, and when the driving wheel rotates, the friction surface acts on the shielding ring to rotate the shielding ring.

16. The shielding device according to claim 15, characterized in that When the shielding device includes both the fixing part and the power part, the driving wheel is rotatably connected to the fixing part.

17. The shielding device according to claim 15 or 16, characterized in that: The outer side surface of the driving wheel is provided with a belt groove.

18. The shielding device according to claim 15 or 16, characterized in that: The power unit further comprises an auxiliary wheel, and the auxiliary wheel is pressed on the side surface of the shielding ring.

19. The shielding device according to claim 18, characterized in that There are two auxiliary wheels, and the distances between the two auxiliary wheels and the driving wheel are equal.

20. The shielding device according to claim 13, characterized in that The fixing part includes a clamping plate and a connecting plate. The clamping plate is arranged on one side of the connecting plate. Both ends of the clamping plate have clamping grooves for clamping the electroplating equipment. The through hole is arranged at the center of the connecting plate.

21. An electroplating device, comprising a cathode and an anode, characterized in that: The electroplating equipment also includes a shielding device as described in any one of claims 12-20.

22. The electroplating equipment according to claim 21, characterized in that The shielding device is arranged between the cathode and the anode, and the end of the spoiler points to the cathode.

23. The electroplating equipment according to claim 21, characterized in that The shielding device is closer to the cathode than to the anode.

24. The electroplating equipment according to claim 21, characterized in that The distance between the shielding device and the cathode can be adjusted; And / or, the distance between the shielding device and the cathode is in the range of 3 mm to 10 mm; And / or, the electroplating equipment includes a plurality of the shielding devices, and the plurality of the shielding devices are arranged in parallel.

25. The electroplating equipment according to claim 21, characterized in that Looking from the shielding device toward the cathode, the spoiler of the shielding ring rotates in a clockwise direction.

26. The electroplating equipment according to claim 25, characterized in that The rotation speed is 100RPM-200RPM.

27. An electroplating method, characterized in that: Electroplating is carried out using the electroplating equipment described in any one of claims 21-26.

28. The electroplating method according to claim 27, characterized in that During the wafer electroplating process, the shielding device is used for shielding.

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