Photoelectric reflective information sensor

A sensor and reflective technology, which is applied in the field of photoelectric sensing, can solve the problems of photoelectric reflective information sensors, which are difficult to miniaturize electronic products, require a large investment, and are not beautiful enough, and achieve the effects of detecting weak information and reducing the horizontal area

CN110568446APending Publication Date: 2019-12-13SHENZHEN HUAJING BAOFENG ELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2019-12-13

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Abstract

The invention discloses a photoelectric reflective information sensor. The sensor comprises a light-emitting device and a light-sensitive device. Other faces, except a light-emitting face, of the light-emitting device are coated with first light blocking layers, other faces, except a light-receiving face, of the light-sensitive device are coated with second light blocking layers, and the light-emitting device coated with the first light blocking layers and the light-sensitive device coated with the second light blocking layers are arranged in a contact mode or arranged at a set interval. The light-emitting device emits light from the light-emitting surface, the light is reflected by a detected object and then the light-receiving surface of the light-sensitive device is irradiated, and thedetection of the detected object is achieved. According to the invention, the horizontal area of the photoelectric reflective information sensor is reduced by 60-70%, a higher signal intensity / irradiation light intensity ratio can be obtained, and the energy consumption is reduced.
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Description

technical field

[0001] The invention relates to the technical field of photoelectric sensing, in particular to a photoelectric reflective information sensor. Background technique

[0002] There are following defects in the present photoelectric type reflective information sensor: 1. need to make very thick shading object 53 (such as Figure 5 As shown), plus the process space that needs to be considered when installing the light-emitting device 51 and the photosensitive device 52, it will occupy a large area, resulting in the photoelectric reflective information sensor cannot be made into a small-volume device, making it difficult to use the photoelectric reflective information sensor Microelectronic products (such as wearable or handheld electronic products). 2. Since the light-emitting device 51 and the photosensitive device 52 are far apart, a considerable part of the light emitted by the light-emitting device is ineffective (reflected light does not irradiate the photose...

Examples

Embodiment 1

[0030] like figure 1 As shown, the photoelectric reflective information sensor provided in Embodiment 1 includes a substrate 1 provided with electrical connection lines, a light-emitting device 2 and a photosensitive device 3, and the other surfaces of the light-emitting device 2 except the light-emitting surface 21 are coated with the first A light-shielding layer 22, a second light-shielding layer 32 is coated on other surfaces of the photosensitive device 3 except the light-receiving surface 31, and the light-emitting device 2 coated with the first light-shielding layer 22 is coated with the second light-shielding layer. The photosensitive device 3 of the optical layer 32 is disposed on the substrate 1 , the remaining space on the substrate 1 is filled with a light-transmitting protective body 4 , and the light-transmitting protective body 4 surrounds the light-emitting device 2 and the photosensitive device 3 .

[0031] Wherein, the light-emitting device 2 is arranged on ...

Embodiment 2

[0033] like figure 2 As shown, the photoelectric reflective information sensor provided in Embodiment 2 includes a substrate 1 provided with electrical connection lines, a light-emitting device 2 and a photosensitive device 3, and each surface of the light-emitting device 2 except the light-emitting surface 21 is coated with a first A light-shielding layer 22, a second light-shielding layer 32 is coated on other surfaces of the photosensitive device 3 except the light-receiving surface 31, and the light-emitting device 2 coated with the first light-shielding layer 22 is coated with the second light-shielding layer. The photosensitive device 3 of the optical layer 32 is disposed on the substrate 1 , the remaining space on the substrate 1 is filled with a light-transmitting protective body 4 , and the light-transmitting protective body 4 surrounds the light-emitting device 2 and the photosensitive device 3 .

[0034] Wherein, the light emitting device 2 and the photosensitive d...

Embodiment 3

[0037] like image 3 As shown, the photoelectric reflective information sensor provided in Embodiment 3 includes a substrate 1 provided with electrical connection lines, a light-emitting device 2 and a photosensitive device 3, and each surface of the light-emitting device 2 except the light-emitting surface 21 is coated with a first A light-shielding layer 22, a second light-shielding layer 32 is coated on other surfaces of the photosensitive device 3 except the light-receiving surface 31, and the light-emitting device 2 coated with the first light-shielding layer 22 is coated with the second light-shielding layer. The photosensitive device 3 of the optical layer 32 is arranged on the substrate 1, the remaining space on the substrate 1 is filled with a light-transmitting colloid 5, and the light-transmitting colloid 5 surrounds the light-emitting device 2 and the photosensitive device 3, and a casing 6 is arranged around the light-transmitting colloid 5, Moreover, a light open...