A long wavelength vertical cavity surface emitting semiconductor laser

Abstract

The invention discloses a long-wavelength vertical cavity surface emitting semiconductor laser, comprising a lower waveguide layer; a short-wavelength luminous region located on the surface of the lower waveguide layer; an upper waveguide layer located on the surface of the short-wavelength luminous region facing away from the lower waveguide layer; a long-wavelength luminous region located on the surface of the upper waveguide layer facing away from the lower waveguide layer; an upper photonic crystal layer located on the surface of the long-wavelength luminous region facing away from the lower waveguide layer; the upper photonic crystal layer is provided with a plurality of scattering columns to form a photonic crystal, and the scattering columns extend from the surface of the upper photonic crystal layer facing away from the lower waveguide layer to the upper waveguide layer along the thickness direction. The short-wavelength luminous region can generate light with a shorter wavelength and oscillate in the horizontal direction to generate short-wavelength laser. The short-wavelength laser will be used as a pump laser, and will be transmitted to the long-wavelength luminous region through the photonic crystal extending to the upper waveguide layer to excite the long-wavelength luminous region to generate long-wavelength light and form long-wavelength laser emission, so that the laser has a lower resistance and better heat dissipation performance.

Description

Technical Field

[0001] The invention relates to the technical field of lasers, in particular to a long-wavelength vertical cavity surface emitting semiconductor laser. Background Art

[0002] Vertical Cavity Surface Emitting Semiconductor (VCSEL) laser is a semiconductor laser that emits light vertically from the surface. It has unique advantages such as superior spot distribution, dynamic single longitudinal mode operation, and the ability to carry high power density. Currently, due to the limitations of the material system, the structure and performance of VCSEL lasers in the visible light and near-infrared short-wave bands (≤1100nm) are relatively mature, and are widely used in medical, processing, lighting and other fields.

[0003] However, long-wavelength VCSEL lasers, especially those with wavelengths around 1550nm, have very broad application prospects in applications such as long-distance optical communications, 3D perception, and laser radar. Since VCSEL lasers in this wavelength range cannot be prepared using conventional oxidation processes for current and optical limiting apertures, and the refractive index difference between the distributed Bragg reflector (DBR) material and the lattice matching material used is very small, resulting in a very thick DBR thickness, which seriously affects its heat dissipation characteristics during operation and greatly increases the resistance of the VCSEL. Therefore, the current preparation process of VCSEL lasers with a long wavelength of 1550nm or longer wavelengths is very complicated, making it difficult to carry out large-scale industrialization, and the output power is only about mW, which seriously limits its application in the above-mentioned fields. Therefore, how to provide a long-wavelength vertical cavity surface emitting semiconductor laser with low resistance and good heat dissipation is a problem that technicians in this field urgently need to solve. Summary of the invention

[0004] The object of the present invention is to provide a long-wavelength vertical cavity surface emitting semiconductor laser having lower resistance and better heat dissipation performance.

[0005] In order to solve the above technical problems, the present invention provides a long-wavelength vertical cavity surface emitting semiconductor laser, comprising:

[0006] lower waveguide layer;

[0007] a short-wave luminous region located on the surface of the lower waveguide layer;

[0008] An upper waveguide layer located on a surface of the short-wave light-emitting region facing away from the lower waveguide layer;

[0009] A long-wave luminous area located on a surface of the upper waveguide layer facing away from the lower waveguide layer;

[0010] An upper photonic crystal layer is located on a surface of the long-wave luminous region facing away from the lower waveguide layer; the upper photonic crystal layer is provided with a plurality of scattering columns to form a photonic crystal, and the scattering columns extend along the thickness direction from the surface of the upper photonic crystal layer facing away from the lower waveguide layer to the upper waveguide layer.

[0011] Optionally, the size of the long-wave light-emitting area is smaller than the size of the short-wave light-emitting area.

[0012] Optionally, the long-wave light-emitting area is circular in the horizontal direction; and the upper photonic crystal layer covers a surface of the long-wave light-emitting area that is away from the lower waveguide layer.

[0013] Optionally, the scattering columns are regularly distributed with the center of the upper photonic crystal layer as the center; and the photonic crystal is in a centrally symmetrical pattern along the horizontal direction.

[0014] Optionally, adjacent scattering columns are distributed in a regular triangle.

[0015] Optionally, there is a preset distance between a surface of the scattering column facing the lower waveguide layer and a surface of the upper waveguide layer facing the lower waveguide layer, and the preset distance is greater than zero.

[0016] Optionally, the shape of the scattering column along the horizontal direction is any one of the following:

[0017] Circle, square, equilateral triangle.

[0018] Optionally, the scattering column is an air column.

[0019] Optionally, the side walls of the lower waveguide layer, the side walls of the short-wave light-emitting area, and the side walls of the upper waveguide layer are all provided with reflective films.

[0020] Optionally, at least two long-wave luminous areas are arranged on a surface of the upper waveguide layer facing away from the lower waveguide layer; and adjacent long-wave luminous areas are isolated from each other;

[0021] The upper photonic crystal layer is disposed on the surface of any of the long-wave light-emitting regions facing away from the lower waveguide layer, and the scattering columns are disposed on any of the upper photonic crystal layers to form a photonic crystal.

[0022] The present invention provides a long-wavelength vertical cavity surface emitting semiconductor laser, comprising a lower waveguide layer; a short-wavelength light-emitting region located on the surface of the lower waveguide layer; an upper waveguide layer located on the surface of the short-wavelength light-emitting region facing away from the lower waveguide layer; a long-wavelength light-emitting region located on the surface of the upper waveguide layer facing away from the lower waveguide layer; and an upper photonic crystal layer located on the surface of the long-wavelength light-emitting region facing away from the lower waveguide layer. The upper photonic crystal layer is provided with a plurality of scattering columns to form a photonic crystal, and the scattering columns extend from the surface of the upper photonic crystal layer facing away from the lower waveguide layer to the upper waveguide layer along the thickness direction.

[0023] The short-wavelength light emitting area can generate light with a shorter wavelength, which will be transmitted in the lower waveguide layer and the upper waveguide layer and oscillate in the horizontal direction to generate short-wavelength laser. The short-wavelength laser will be used as a pump laser and transmitted to the long-wavelength light emitting area through the photonic crystal extending to the upper waveguide layer to excite the long-wavelength light emitting area to generate long-wavelength light, which will oscillate back and forth in the photonic crystal to form long-wavelength laser emission. The arrangement of the short-wavelength light emitting area and the photonic crystal can realize self-pumped long-wavelength laser emission, avoid the arrangement of the Bragg reflector, and make the long-wavelength vertical cavity surface emitting semiconductor laser have lower resistance and better heat dissipation performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 A schematic diagram of the structure of a long-wavelength vertical-cavity surface-emitting semiconductor laser provided by an embodiment of the present invention;

[0026] Figure 2 for Figure 1 A schematic diagram of a top view structure;

[0027] Figure 3 A schematic structural diagram of a specific long-wavelength vertical-cavity surface-emitting semiconductor laser provided by an embodiment of the present invention;

[0028] Figure 4 for Figure 3 Schematic diagram of the top view structure.

[0029] In the figure: 1. lower waveguide layer, 2. short-wave light-emitting area, 3. upper waveguide layer, 4. long-wave light-emitting area, 5. upper photonic crystal layer, 6. scattering columns, 7. photonic crystals, 8. reflective film. DETAILED DESCRIPTION

[0030] The core of the present invention is to provide a long wavelength vertical cavity surface emitting semiconductor laser. In the prior art, a very thick DBR needs to be set to achieve the generation of laser. However, since the thickness of the DBR is very thick, it will seriously affect its heat dissipation characteristics during operation and greatly increase the resistance of the VCSEL.

[0031] The present invention provides a long-wavelength vertical cavity surface emitting semiconductor laser, comprising a lower waveguide layer; a short-wavelength light-emitting region located on the surface of the lower waveguide layer; an upper waveguide layer located on the surface of the short-wavelength light-emitting region facing away from the lower waveguide layer; a long-wavelength light-emitting region located on the surface of the upper waveguide layer facing away from the lower waveguide layer; an upper photonic crystal layer located on the surface of the long-wavelength light-emitting region facing away from the lower waveguide layer; the upper photonic crystal layer is provided with a plurality of scattering columns to form a photonic crystal, and the scattering columns extend from the surface of the upper photonic crystal layer facing away from the lower waveguide layer to the upper waveguide layer along the thickness direction.

[0032] The short-wavelength light emitting area can generate light with a shorter wavelength, which will be transmitted in the lower waveguide layer and the upper waveguide layer and oscillate in the horizontal direction to generate short-wavelength laser. The short-wavelength laser will be used as a pump laser and transmitted to the long-wavelength light emitting area through the photonic crystal extending to the upper waveguide layer to excite the long-wavelength light emitting area to generate long-wavelength light, which will oscillate back and forth in the photonic crystal to form long-wavelength laser emission. The arrangement of the short-wavelength light emitting area and the photonic crystal can realize self-pumped long-wavelength laser emission, avoid the arrangement of the Bragg reflector, and make the long-wavelength vertical cavity surface emitting semiconductor laser have lower resistance and better heat dissipation performance.

[0033] In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0034] Please refer to Figure 1 as well as Figure 2 , Figure 1 A schematic diagram of the structure of a long-wavelength vertical-cavity surface-emitting semiconductor laser provided by an embodiment of the present invention; Figure 2 for Figure 1 Schematic diagram of the top view structure.

[0035] See also Figure 1 as well as Figure 2 In an embodiment of the present invention, a long wavelength vertical cavity surface emitting semiconductor laser comprises a lower waveguide layer 1; a short wave light emitting area 2 located on the surface of the lower waveguide layer 1; an upper waveguide layer 3 located on the surface of the short wave light emitting area 2 facing away from the lower waveguide layer 1; a long wave light emitting area 4 located on the surface of the upper waveguide layer 3 facing away from the lower waveguide layer 1; an upper photonic crystal layer 5 located on the surface of the long wave light emitting area 4 facing away from the lower waveguide layer 1; the upper photonic crystal layer 5 is provided with a plurality of scattering columns 6 to form a photonic crystal 7, and the scattering columns 6 extend from the surface of the upper photonic crystal layer 5 facing away from the lower waveguide layer 1 to the upper waveguide layer 3 along the thickness direction.

[0036] The short-wave luminous area 2 is used to generate short-wave light with a wavelength less than 1100nm. The lower waveguide layer 1 and the upper waveguide layer 3 are respectively located on both sides of the short-wave luminous area 2 to form a sandwich-like structure. When working, the short-wave light generated by the short-wave luminous area 2 will be transmitted in the upper waveguide layer 3 and the lower waveguide layer 1, and oscillate in the horizontal direction to generate short-wave laser. The specific structure and specific material of the lower waveguide layer 1, the short-wave luminous area 2 and the upper waveguide layer 3 can refer to the existing technology and will not be repeated here.

[0037] The long-wave luminous region 4 is located on the surface of the upper waveguide layer 3 facing away from the lower waveguide layer 1. The long-wave luminous region 4 is used to generate long-wave light, for example, long-wave light with a wavelength of about 1550nm. The specific structure and specific material of the long-wave luminous region 4 can refer to the structure and material of the luminous region in the long-wavelength VCSEL laser in the prior art, and will not be described in detail here.

[0038] An upper photonic crystal layer 5 is provided on the surface of the long-wave luminous area 4 facing away from the lower waveguide layer 1. The upper photonic crystal layer 5 is mainly used to protect the long-wave luminous area 4 from being easily damaged. At the same time, it forms a sandwich-like structure with the upper waveguide layer 3 and the long-wave luminous area 4 to ensure that the long-wave light generated by the long-wave luminous area 4 can oscillate and generate long-wave laser.

[0039] The upper photonic crystal layer 5 is provided with a plurality of scattering columns 6 to form a photonic crystal 7. The axis of the scattering column 6 is usually perpendicular to the surface of the upper photonic crystal layer 5 facing away from the lower waveguide layer 1. The scattering column 6 extends uniformly from the surface of the upper photonic crystal layer 5 facing away from the lower waveguide layer 1 to the upper waveguide layer 3. Since the provision of the scattering columns 6 will form the photonic crystal 7, the refractive index of the scattering columns 6 is different from the refractive index of the film layer through which the scattering columns 6 pass, such as the upper photonic crystal layer 5, the long-wave light-emitting area 4 and the upper waveguide layer 3, and the scattering columns 6 are regularly distributed in a periodic manner in the horizontal direction to form the photonic crystal 7.

[0040] It should be noted that in the embodiment of the present invention, the region where the scattering column 6 is provided forms the photonic crystal 7, that is, the scattering column 6 is provided in the upper photonic crystal layer 5, the long-wave light-emitting region 4 and the upper waveguide layer 3, and the region where the scattering column 6 extends forms the photonic crystal 7. The upper photonic crystal 7 located in the upper waveguide layer 3 will transmit the short-wave laser generated by the short-wave light-emitting region 2 to the long-wave light-emitting region 4 as a pump laser to generate long-wave light. Specifically, the long-wave light will oscillate in the photonic crystal 7 to form a long-wave laser, and emit a long-wavelength vertical cavity surface emitting semiconductor laser through the photonic crystal 7. At this time, the upper waveguide layer 3 can also be called an optical coupling layer to achieve optical coupling.

[0041] In the embodiment of the present invention, there is no specific limitation on the specific shape of the scattering column 6, and the scattering column 6 can be a cylinder, a triangular prism, a cuboid, etc., depending on the specific situation; at the same time, in the embodiment of the present invention, there is no specific limitation on the shape of the distribution between adjacent scattering columns 6, and the adjacent scattering columns 6 can be arranged in a regular triangle, a square, or a rectangle, which is not specifically limited in the embodiment of the present invention. Accordingly, in the embodiment of the present invention, there is usually no specific limitation on the specific refractive index of the scattering column 6, which depends on the specific situation.

[0042] Specifically, in the embodiment of the present invention, the size of the long-wave light-emitting area 4 is smaller than the size of the short-wave light-emitting area 2. Usually, a step surface is formed on the surface of the upper waveguide layer 3 facing away from the lower waveguide layer 1 to limit the size of the long-wave light-emitting area 4 and define the area where the long-wavelength laser is output. If the size of the long-wave light-emitting area 4 is not limited to be smaller than the size of the short-wave light-emitting area 2, the entire long-wave light-emitting area 4 will form material absorption of the short-wave oscillation laser below it, thereby affecting the normal operation of the short-wave laser as pump light. Accordingly, in order to ensure the normal operation of the pump light, in the embodiment of the present invention, the size of the long-wave light-emitting area 4 is limited to be smaller than the size of the short-wave light-emitting area 2.

[0043] Specifically, in the embodiment of the present invention, the long-wave luminous area 4 is circular in the horizontal direction; the upper photonic crystal layer 5 covers the surface of the long-wave luminous area 4 on the side facing away from the lower waveguide layer 1. Generally, limiting the structure of the long-wave luminous area 4 in the horizontal direction to be circular can facilitate the emission of long-wavelength circular laser light; accordingly, the upper photonic crystal layer 5 will cover the surface of the long-wave luminous area 4 on the side facing away from the lower waveguide layer 1, so that the structure of the upper photonic crystal layer 5 in the horizontal direction is also circular.

[0044] Specifically, in the embodiment of the present invention, the scattering columns 6 are regularly distributed with the center of the upper photonic crystal layer 5 as the center; the photonic crystal 7 is in a centrally symmetrical pattern along the horizontal direction. The scattering columns 6 can be regularly distributed with the center of the upper photonic crystal layer 5 as the center, so that the center of the photonic crystal 7 is also located at the center of the upper photonic crystal layer 5. In addition, the long-wavelength laser can be emitted from the center of the upper photonic crystal layer 5. At this time, the photonic crystal 7 will be in a re-symmetrical pattern along the horizontal direction, and the center of the photonic crystal 7 along the horizontal direction will coincide with the center of the upper photonic crystal layer 5.

[0045] Specifically, in the embodiment of the present invention, the adjacent scattering columns 6 are distributed in a regular triangle. The adjacent scattering columns 6 are distributed in a regular triangle, so that the scattering columns 6 are distributed in a regular hexagon with the center of the photonic crystal layer 5 as the center, so as to form a photonic crystal 7 in a regular hexagonal shape in the horizontal direction, and form a long-wavelength laser spot that is approximately circular.

[0046] Preferably, in the embodiment of the present invention, there is a preset distance between the surface of the scattering column 6 facing the lower waveguide layer 1 and the surface of the upper waveguide layer 3 facing the lower waveguide layer 1, and the preset distance is greater than zero. That is, in the embodiment of the present invention, the scattering column 6 will not extend to the surface of the upper waveguide layer 3 facing the lower waveguide layer 1, thereby avoiding the introduction of excessive optical loss and affecting the horizontal oscillation of the short-wave laser. It can be understood that the penetration depth of the scattering column 6 in the upper waveguide layer 3, that is, the penetration depth of the photonic crystal 7 in the upper waveguide layer 3, determines the light intensity of the short-wavelength laser that can be coupled into the long-wavelength light-emitting area 4.

[0047] Specifically, in an embodiment of the present invention, the shape of the scattering column 6 along the horizontal direction is any one of the following: circular, square, and equilateral triangle. Setting the structure of the scattering column 6 to the above structure can ensure the good performance of the photonic crystal 7. Of course, in the embodiment of the present invention, the specific structure of the scattering column 6 is not specifically limited, depending on the specific situation. Specifically, in an embodiment of the present invention, the scattering column 6 can be specifically an air column. That is, the scattering column 6 can be specifically an air column formed by setting a deep hole extending to the upper waveguide layer 3 on the surface of the upper photonic crystal layer 5 facing away from the lower waveguide layer 1. Of course, in the embodiment of the present invention, the specific material and refractive index of the scattering column 6 are not specifically limited, depending on the specific situation.

[0048] Specifically, in the embodiment of the present invention, the side wall of the lower waveguide layer 1, the side wall of the short-wave light-emitting area 2, and the side wall of the upper waveguide layer 3 are all provided with a reflective film 8. The provision of the reflective film 8 can ensure that the short-wave light generated by the short-wave light-emitting area 2 will oscillate between the reflective films 8 in the horizontal direction to form a short-wave laser. That is, the reflective film 8 is used to limit the laser to oscillate inside the short-wave laser and not to be emitted to the external space, ensuring that the short-wave laser has high power inside. The specific structure of the reflective film 8 can refer to the prior art and will not be repeated here.

[0049] A long-wavelength vertical-cavity surface-emitting semiconductor laser provided in an embodiment of the present invention comprises a lower waveguide layer 1; a short-wavelength light-emitting region 2 located on the surface of the lower waveguide layer 1; an upper waveguide layer 3 located on the surface of the short-wavelength light-emitting region 2 facing away from the lower waveguide layer 1; a long-wavelength light-emitting region 4 located on the surface of the upper waveguide layer 3 facing away from the lower waveguide layer 1; an upper photonic crystal layer 5 located on the surface of the long-wavelength light-emitting region 4 facing away from the lower waveguide layer 1; the upper photonic crystal layer 5 is provided with a plurality of scattering columns 6 to form a photonic crystal 7, and the scattering columns 6 extend from the surface of the upper photonic crystal layer 5 facing away from the lower waveguide layer 1 to the upper waveguide layer 3 along the thickness direction.

[0050] The short-wavelength light emitting area 2 can generate light with a shorter wavelength, which will be transmitted in the lower waveguide layer 1 and the upper waveguide layer 3 and oscillate in the horizontal direction to generate short-wavelength laser. The short-wavelength laser will be used as a pump laser and transmitted to the long-wavelength light emitting area 4 through the photonic crystal 7 extending to the upper waveguide layer 3 to excite the long-wavelength light emitting area 4 to generate long-wavelength light, which will oscillate back and forth in the photonic crystal 7 to form long-wavelength laser emission. The arrangement of the short-wavelength light emitting area 2 and the photonic crystal 7 can realize self-pumped long-wavelength laser emission, avoid the arrangement of a Bragg reflector, and make the long-wavelength vertical cavity surface emitting semiconductor laser have lower resistance and better heat dissipation performance.

[0051] The specific structure of a long-wavelength vertical-cavity surface-emitting semiconductor laser provided by the present invention will be described in detail in the following invention embodiments.

[0052] Please refer to Figure 3 as well as Figure 4 , Figure 3 A schematic structural diagram of a specific long-wavelength vertical-cavity surface-emitting semiconductor laser provided by an embodiment of the present invention; Figure 4 for Figure 3 Schematic diagram of the top view structure.

[0053] Different from the above-mentioned invention embodiment, the present invention embodiment further specifically defines the structure of the long-wavelength vertical cavity surface emitting semiconductor laser on the basis of the above-mentioned invention embodiment. The rest of the contents have been described in detail in the above-mentioned invention embodiment and will not be repeated here.

[0054] See also Figure 3 as well as Figure 4 In the embodiment of the present invention, at least two long-wave light-emitting areas 4 are arranged on the surface of the upper waveguide layer 3 facing away from the lower waveguide layer 1; adjacent long-wave light-emitting areas 4 are isolated from each other; the upper photonic crystal layer 5 is arranged on the surface of any long-wave light-emitting area 4 facing away from the lower waveguide layer 1, and any upper photonic crystal layer 5 is provided with the scattering column 6 to form a photonic crystal 7.

[0055] Each of the long-wave luminous regions 4 and the corresponding scattering columns 6 of the upper photonic crystal layer 5 constitute a plurality of luminous points, thereby realizing the preparation of a long-wavelength luminous array, and the plurality of luminous points share the same short-wave laser composed of the lower waveguide layer 1, the short-wave luminous region 2 and the upper waveguide layer 3. Specifically, the plurality of long-wave luminous regions 4 are all located on the surface of the upper waveguide layer 3 facing away from the lower waveguide layer 1, and the adjacent long-wave luminous regions 4 are isolated from each other to avoid mutual interference between long-wave light rays. An upper photonic crystal layer 5 is provided on the surface of any long-wave luminous region 4 facing away from the lower waveguide layer 1, and each upper photonic crystal layer 5 is provided with a scattering column 6 extending to the upper waveguide layer 3 to form a photonic crystal 7 in each luminous point that can transmit the short-wave laser to each long-wave luminous region 4. Among them, each luminous point can emit a long-wave laser outward. When multiple light-emitting points are provided, the short-wave laser composed of the lower waveguide layer 1, the short-wavelength light-emitting area 2 and the upper waveguide layer 3 can have a longer oscillation length, thereby providing a higher laser intensity, thereby simultaneously pumping multiple different long-wavelength light-emitting areas. In the embodiment of the present invention, the specific number of the long-wavelength light-emitting area 4, i.e., the related structure, is not specifically limited and depends on the specific situation.

[0056] A long-wavelength vertical-cavity surface-emitting semiconductor laser provided in an embodiment of the present invention can form a long-wavelength vertical-cavity surface-emitting semiconductor laser array by arranging a plurality of long-wavelength light-emitting regions and corresponding structures.

[0057] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0058] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0059] The above is a detailed introduction to a long wavelength vertical cavity surface emitting semiconductor laser provided by the present invention. This article uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A long wavelength vertical cavity surface emitting semiconductor laser, characterized in that: include: lower waveguide layer; a short-wave luminous region located on the surface of the lower waveguide layer; An upper waveguide layer located on a surface of the short-wave light-emitting region facing away from the lower waveguide layer; A long-wave luminous area located on a surface of the upper waveguide layer facing away from the lower waveguide layer; An upper photonic crystal layer is located on a surface of the long-wave luminous region facing away from the lower waveguide layer; the upper photonic crystal layer is provided with a plurality of scattering columns to form a photonic crystal, and the scattering columns extend along the thickness direction from the surface of the upper photonic crystal layer facing away from the lower waveguide layer to the upper waveguide layer.

2. The long wavelength vertical cavity surface emitting semiconductor laser according to claim 1, characterized in that: The size of the long-wave light-emitting area is smaller than that of the short-wave light-emitting area.

3. The long wavelength vertical cavity surface emitting semiconductor laser according to claim 2, characterized in that: The long-wave luminous area is circular in the horizontal direction; the upper photonic crystal layer covers the surface of the long-wave luminous area on the side facing away from the lower waveguide layer.

4. The long wavelength vertical cavity surface emitting semiconductor laser according to claim 3, characterized in that: The scattering columns are regularly distributed with the center of the upper photonic crystal layer as the center; and the photonic crystal is in a centrally symmetrical pattern along the horizontal direction.

5. The long wavelength vertical cavity surface emitting semiconductor laser according to claim 4, characterized in that: Adjacent scattering columns are distributed in a regular triangle.

6. The long wavelength vertical cavity surface emitting semiconductor laser according to claim 1, characterized in that: A preset distance exists between a surface of the scattering column facing the lower waveguide layer and a surface of the upper waveguide layer facing the lower waveguide layer, and the preset distance is greater than zero.

7. The long wavelength vertical cavity surface emitting semiconductor laser according to claim 6, characterized in that: The shape of the scattering column along the horizontal direction is any one of the following: Circle, square, equilateral triangle.

8. The long wavelength vertical cavity surface emitting semiconductor laser according to claim 7, characterized in that: The scattering column is an air column.

9. The long wavelength vertical cavity surface emitting semiconductor laser according to claim 1, characterized in that: The side wall of the lower waveguide layer, the side wall of the short-wave light-emitting area and the side wall of the upper waveguide layer are all provided with a reflective film.

10. The long wavelength vertical cavity surface emitting semiconductor laser according to any one of claims 2 to 9, characterized in that: At least two long-wave luminous areas are arranged on the surface of the upper waveguide layer facing away from the lower waveguide layer; adjacent long-wave luminous areas are isolated from each other; The upper photonic crystal layer is disposed on the surface of any of the long-wave light-emitting regions facing away from the lower waveguide layer, and the scattering columns are disposed on any of the upper photonic crystal layers to form a photonic crystal.

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