Gallium Nitride Schottky Diode Multi-stage Limiter Circuit

A gallium nitride Schottky and Schottky diode technology, applied in the microwave field, can solve the difficulty of continuing to improve power capacity and frequency response, ionized impurity scattering and alloy disordered scattering, high temperature resistance, radiation resistance, etc. problems, to achieve the effect of shortening the limiting response time, suppressing current collapse, and high power capacity

CN111987144BActive Publication Date: 2022-06-28XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2022-06-28

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Abstract

The invention discloses a gallium nitride schottky diode multi-stage limiting circuit, which mainly solves the problems of small power capacity and slow response speed of the existing limiter. From left to right, it is the first-level pair of tubes (1), the second-level pair of tubes (2), and the third-level pair of tubes (3). Both tubes use lateral gallium nitride Schottky diodes with a grooved anode structure. The first stage uses Pt as the anode metal for the two diodes in the tube, and the turn-on voltage is 1.2V; the second stage uses Ni for the two diodes in the tube. As the anode metal, the turn-on voltage is 0.8V, and the two diodes in the third pair of tubes use W or Mo as the anode metal, and the turn-on voltage is 0.4V. The invention adopts gallium nitride Schottky diodes whose turn-on voltage decreases step by step, which significantly improves the frequency response of the limiting circuit, reduces the limiting level, improves the power capacity, and can be used for microwave protection.
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Description

technical field

[0001] The invention belongs to the technical field of microwaves, and in particular relates to a multi-level limiting circuit of a gallium nitride Schottky diode, which can be used for microwave protection.

[0002] technical background

[0003] With the continuous advancement of science and technology, electronic equipment is constantly developing towards integration and miniaturization. More and more advanced precision components greatly increase the function and performance of the equipment, but also make the equipment system more complex. In order to ensure that the equipment can cope with the impact of high-power microwaves, professional microwave protection design is required. The core low-noise amplifier of the radar receiver is easily burnt by the received high-power microwaves. It is necessary to design a limiter circuit at the front end of the radar receiver, so that the low-power microwave signal can pass through with less loss, and the high-power ...

Examples

Embodiment Construction

[0019] Below in conjunction with the accompanying drawings and specific embodiments, the present invention is described in further detail:

[0020] refer to figure 1 , The gallium nitride Schottky diode multi-stage limiting circuit of this example includes three-stage pairing tubes, namely the first-stage pairing tube 1, the second-stage pairing tube 2, the third-stage pairing tube 3, and the three-stage pairing tube are connected by a microstrip line L.

[0021] The first-stage pair of tubes adopts two lateral gallium nitride Schottky diodes with grooved anode structure, wherein the anode of one diode is connected to the microstrip line, the cathode is grounded, and the cathode of the other diode is connected to the microstrip line , the anode is grounded. In this embodiment, the anodes of the two GaN Schottky diodes in the first stage are made of Pt metal with a thickness of 100nm, the turn-on voltage is 1.2V, and the cathodes are made of Ti / Al with a thickness of 22 / 140 / 5...