Exposure and development method for semiconductor

Abstract

The present invention provides an exposure and development method for semiconductors, comprising the following steps: (1) uniformly coating a photoresist on the surface of a semiconductor substrate to form a photoresist layer; (2) heating the semiconductor substrate treated in step (1) until the photoresist layer is dried and solidified; (3) placing the semiconductor substrate under a first light source without using a photomask to perform full pre-exposure, with an exposure dose of 3.5-5 mJ / cm 2 ; (4) placing the photoresist layer on the semiconductor substrate under a second light source using a photomask for main exposure; (5) spraying a developer on the semiconductor substrate for development. After forming a photoresist layer on the surface of the semiconductor substrate, the method of the present invention reduces the development defects of the semiconductor substrate treated by the method of the present invention and improves the yield rate through heating and drying, pre-exposure without using a photomask, main exposure using a photomask and corresponding parameter settings.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor processing, and in particular relates to an exposure and development method for semiconductors. Background Art

[0002] In the optical lithography manufacturing process of microelectronics manufacturing technology, photosensitive materials are coated on silicon wafers and dried, and then light is exposed on the wafer through a patterned photomask, and then developed on the silicon wafer to form a photomask pattern. The traditional process is to refine the pattern by shortening the wavelength of the light used for exposure, but with the advancement of technology, the pattern requirements are gradually reduced, so that it is difficult to meet the requirements by simply reducing the wavelength of the exposure light. Summary of the invention

[0003] The object of the present invention is to overcome the shortcomings of the prior art and provide an exposure and development method for semiconductors.

[0004] To achieve the above object, the technical solution adopted by the present invention is: an exposure and development method for semiconductors, the method comprising the following steps:

[0005] (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer;

[0006] (2) heating the semiconductor substrate treated in step (1) until the photoresist layer is dried and solidified, and then cooling the substrate to room temperature, wherein the heating temperature is not higher than 165° C.;

[0007] (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a first light source for full pre-exposure at an exposure dose of 3.5-5 mJ / cm 2 ;

[0008] (4) placing the photoresist layer on the semiconductor substrate treated in step (3) under a second light source for main exposure using a photomask, wherein the wavelength of the second light source is different from that of the first light source;

[0009] (5) Spraying a developer on the photoresist layer on the semiconductor substrate treated in step (4) for development.

[0010] After forming a photoresist layer on the surface of a semiconductor substrate, the exposure and development method for semiconductors of the present invention reduces the development defects of the semiconductor substrate processed by the method of the present invention and improves the yield rate through heating and drying, pre-exposure without using a photomask, main exposure using a photomask and corresponding parameter settings.

[0011] Preferably, the photoresist is a positive photoresist or a negative photoresist.

[0012] Preferably, the wavelength of the first light source is 230-250 nm.

[0013] Preferably, the first light source is a KrF laser.

[0014] Preferably, the second light source is ArF laser.

[0015] Preferably, in step (3), the exposure dose is 4.0-4.5 mJ / cm 2 .

[0016] The inventors have found through research that the method of the present invention is beneficial to improving the yield rate after adopting the above-mentioned pre-exposure dose parameters.

[0017] Preferably, in step (2), the heating temperature is 150°C-165°C.

[0018] More preferably, in step (2), the heating temperature is 155°C-160°C.

[0019] The inventors have found through research that the method of the present invention is beneficial to improving the yield after adopting the above heating temperature parameters.

[0020] The beneficial effects of the present invention are as follows: the present invention provides an exposure and development method for semiconductors. After a photoresist layer is formed on the surface of a semiconductor substrate, the exposure and development method for semiconductors of the present invention reduces the development defects of the semiconductor substrate processed by the method of the present invention and improves the yield through heating and drying, pre-exposure without using a photomask, main exposure using a photomask and corresponding parameter settings. DETAILED DESCRIPTION

[0021] In order to better illustrate the purpose, technical solutions and advantages of the present invention, the present invention will be further described below in conjunction with specific embodiments.

[0022] Example 1

[0023] As an exposure and development method for a semiconductor according to an embodiment of the present invention, the method comprises the following steps:

[0024] (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer;

[0025] (2) heating the semiconductor substrate treated in step (1) to 155° C. until the photoresist layer is dried and solidified, and then cooling to room temperature;

[0026] (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a KrF laser for full pre-exposure at an exposure dose of 3.5 mJ / cm 2 ;

[0027] (4) placing the photoresist layer on the semiconductor substrate treated in step (3) under an ArF laser for main exposure using a photomask;

[0028] (5) The photoresist layer on the semiconductor substrate treated in step (4) is uniformly developed by spraying a developer, and then cleaned by spraying pure water.

[0029] Example 2

[0030] As an exposure and development method for a semiconductor according to an embodiment of the present invention, the method comprises the following steps:

[0031] (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer;

[0032] (2) heating the semiconductor substrate treated in step (1) to 155° C. until the photoresist layer is dried and solidified, and then cooling to room temperature;

[0033] (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a KrF laser for full pre-exposure at an exposure dose of 4.0 mJ / cm 2 ;

[0034] (4) placing the photoresist layer on the semiconductor substrate treated in step (3) under an ArF laser for main exposure using a photomask;

[0035] (5) The photoresist layer on the semiconductor substrate treated in step (4) is uniformly developed by spraying a developer, and then cleaned by spraying pure water.

[0036] Example 3

[0037] As an exposure and development method for a semiconductor according to an embodiment of the present invention, the method comprises the following steps:

[0038] (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer;

[0039] (2) heating the semiconductor substrate treated in step (1) to 155° C. until the photoresist layer is dried and solidified, and then cooling to room temperature;

[0040] (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a KrF laser for full pre-exposure at an exposure dose of 4.5 mJ / cm 2 ;

[0041] (4) placing the photoresist layer on the semiconductor substrate treated in step (3) under an ArF laser for main exposure using a photomask;

[0042] (5) The photoresist layer on the semiconductor substrate treated in step (4) is uniformly developed by spraying a developer, and then cleaned by spraying pure water.

[0043] Example 4

[0044] As an exposure and development method for a semiconductor according to an embodiment of the present invention, the method comprises the following steps:

[0045] (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer;

[0046] (2) heating the semiconductor substrate treated in step (1) to 155° C. until the photoresist layer is dried and solidified, and then cooling to room temperature;

[0047] (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a KrF laser for full pre-exposure at an exposure dose of 5.0 mJ / cm 2 ;

[0048] (4) placing the photoresist layer on the semiconductor substrate treated in step (3) under an ArF laser for main exposure using a photomask;

[0049] (5) The photoresist layer on the semiconductor substrate treated in step (4) is uniformly developed by spraying a developer, and then cleaned by spraying pure water.

[0050] Example 5

[0051] As an exposure and development method for a semiconductor according to an embodiment of the present invention, the method comprises the following steps:

[0052] (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer;

[0053] (2) heating the semiconductor substrate treated in step (1) to 150° C. until the photoresist layer is dried and solidified and then cooling to room temperature;

[0054] (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a KrF laser for full pre-exposure at an exposure dose of 4.5 mJ / cm 2 ;

[0055] (4) placing the photoresist layer on the semiconductor substrate treated in step (3) under an ArF laser for main exposure using a photomask;

[0056] (5) The photoresist layer on the semiconductor substrate treated in step (4) is uniformly developed by spraying a developer, and then cleaned by spraying pure water.

[0057] Example 6

[0058] As an exposure and development method for a semiconductor according to an embodiment of the present invention, the method comprises the following steps:

[0059] (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer;

[0060] (2) heating the semiconductor substrate treated in step (1) to 160° C. until the photoresist layer is dried and solidified, and then cooling to room temperature;

[0061] (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a KrF laser for full pre-exposure at an exposure dose of 4.5 mJ / cm 2 ;

[0062] (4) placing the photoresist layer on the semiconductor substrate treated in step (3) under an ArF laser for main exposure using a photomask;

[0063] (5) The photoresist layer on the semiconductor substrate treated in step (4) is uniformly developed by spraying a developer, and then cleaned by spraying pure water.

[0064] Example 7

[0065] As an exposure and development method for a semiconductor according to an embodiment of the present invention, the method comprises the following steps:

[0066] (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer;

[0067] (2) heating the semiconductor substrate treated in step (1) to 165° C. until the photoresist layer is dried and solidified, and then cooling to room temperature;

[0068] (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a KrF laser for full pre-exposure at an exposure dose of 4.5 mJ / cm 2 ;

[0069] (4) placing the photoresist layer on the semiconductor substrate treated in step (3) under an ArF laser for main exposure using a photomask;

[0070] (5) The photoresist layer on the semiconductor substrate treated in step (4) is uniformly developed by spraying a developer, and then cleaned by spraying pure water.

[0071] The inventors applied the exposure and development methods for semiconductors of Examples 1 to 7 and found out the yield rate by statistical method:

[0072] (1) In the methods of Examples 1 to 4, the yield of the products obtained in Examples 2 and 3 is higher than that in Examples 1 and 4;

[0073] (2) In the methods of Examples 3, 5 and 7, the yield rate of the products obtained in Examples 3 and 6 is higher than that in Examples 5 and 7.

[0074] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. An exposure and development method for a semiconductor, It is characterized in that The method comprises the following steps: (1) uniformly coating a photoresist on a surface of a semiconductor substrate to form a photoresist layer, wherein the photoresist is a positive photoresist or a negative photoresist; (2) heating the semiconductor substrate treated in step (1) until the photoresist layer is dried and solidified, and then cooling to room temperature, wherein the heating temperature is 155° C.-160° C.; (3) Without using a photomask, the photoresist layer on the semiconductor substrate treated in step (2) is placed under a first light source for full pre-exposure at an exposure dose of 4.0-4.5 mJ / cm 2 , the first light source is a KrF laser with a wavelength of 230-250nm; (4) placing the photoresist layer on the semiconductor substrate processed in step (3) under a second light source for main exposure using a photomask, wherein the wavelength of the second light source is different from that of the first light source, and the second light source is an ArF laser; (5) Spraying a developer on the photoresist layer on the semiconductor substrate treated in step (4) for development.