A wafer thickness detection mechanism and detection method thereof

By designing the xyzθ four-axis fine-tuning platform and an adjustable Z-axis wafer thickness detection mechanism, the problems of large size and low detection accuracy of existing equipment are solved, and efficient and precise wafer thickness detection is achieved, which is suitable for modern chip manufacturing. need.

CN112902903BActive Publication Date: 2025-01-10厦门特仪科技有限公司
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Patent Information

Application Number
CN202110287065.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-03-17
Publication Date
2025-01-10
Estimated Expiration
2041-03-17

AI Technical Summary

Technical Problem

The existing wafer thickness detection equipment is large in size, which is inconvenient for portability and transfer, and the detection accuracy and efficiency are insufficient, making it difficult to meet the high-precision needs of modern chip manufacturing.

Method used

A detection mechanism including an L-shaped base, x-axis and y-axis adjustment mechanism, wafer placement platform, upper and lower probe fine-tuning mechanism is designed, using xyzθ four-axis fine-tuning platform and adjustable Z-axis, combined with precision hand Roller for precise position adjustment and measurement.

Benefits of technology

It improves detection accuracy and efficiency, has a compact overall structure, which is easy to carry and operate, and meets the needs of modern chip manufacturing for high-precision detection.

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Abstract

The present invention discloses a wafer thickness detection mechanism and a detection method thereof, comprising an L-shaped base composed of a bottom plate and a side plate, an x-axis adjustment mechanism, a y-axis adjustment mechanism, a wafer placement platform, an upper probe fine-tuning mechanism, and a lower probe fine-tuning mechanism; the x-axis adjustment mechanism is arranged on the bottom plate, and the upper y-axis adjustment mechanism is connected to the wafer placement platform through a platform connecting block; the upper probe fine-tuning mechanism and the lower probe fine-tuning mechanism are respectively fixed to the probe fixing plate through an upper connecting block and a lower connecting block; the probe fixing plate is fixed to the side plate; the wafer placement platform is placed between the upper probe fine-tuning mechanism and the lower probe fine-tuning mechanism; the upper probe fine-tuning mechanism and the lower probe fine-tuning mechanism can both perform xyzθ four-axis fine-tuning. The present invention uses an xyzθ four-axis fine-tuning platform, with an adjustable Z axis, and the wafer placement platform uses a precision hand-cranked wheel to move the lead screw. The overall structure is compact, ensuring the convenience of measurement and adjustment, measurement accuracy, and convenience of carrying at any time.
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Citation Information

Patent Citations

  • An automated device and method for multi-size compatible LED thickness detection

    CN108288593B

  • Wafer thickness detection mechanism

    CN214621081U