Charge pump circuit structure and micro charge pump

Abstract

The present invention relates to a charge pump circuit structure and a micro charge pump, wherein the charge pump circuit structure comprises: a circuit module integrated on a conditioning circuit chip and a capacitor module integrated on a MEMS structure chip; the circuit module is electrically connected to the capacitor module, the circuit module comprises a multi-stage connected charge pump circuit, the output of the upper charge pump circuit is used as the input of the connected lower charge pump circuit, wherein the capacitor module is connected to the last stage charge pump circuit to increase the output of the last stage charge pump circuit. Through the above method, the product size can be reduced, the production cost can be reduced, and the miniaturization and high integration of the charge pump can be achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuits and micro-electromechanical systems, and in particular to a charge pump circuit structure and a micro charge pump. Background Art

[0002] Micro-electromechanical systems (MEMS) are developed on the basis of microelectronics technology. They are micro devices or systems that integrate micro sensors, micro actuators, micro mechanical structures, micro power sources, signal processing and control circuits, high-performance electronic integrated devices, interfaces, and communications. MEMS products usually consist of two parts: MEMS mechanical structure and signal conditioning circuit. Common products include MEMS microphones, micro motors, micro pumps, micro vibrators, MEMS optical sensors, MEMS pressure sensors, MEMS gyroscopes, MEMS accelerometers, MEMS humidity sensors, MEMS gas sensors, etc. and their integrated products. MEMS products can be divided into sensors and actuators according to their operating characteristics. Among them, actuators usually use inverse piezoelectric effect, electrostatic force, magnetic force, thermal stress, etc. to drive MEMS structures to produce motion displacement, and the efficiency of converting input physical quantities into displacement is the core indicator of most MEMS actuators. For electrostatically driven actuators, the displacement generated by their driving is proportional to the driving voltage. Therefore, the driving circuit of such actuators often integrates a charge pump circuit for generating a higher driving voltage.

[0003] A charge pump is also called a switched capacitor voltage converter. It can increase or decrease the input voltage and can also be used to generate negative voltage. Its basic working principle is to charge the capacitor, disconnect the power supply, isolate the charge charged in the capacitor, and then connect the capacitor to another circuit to transfer the isolated charge. The flow of charge is controlled by switches and alternating signals, thereby changing the amplitude and polarity of the charge pump output voltage.

[0004] The charge pump circuit in a typical MEMS signal conditioning circuit chip usually uses MOM capacitors, i.e. metal finger capacitors on the same layer, or MIM capacitors, i.e. metal plate capacitors between layers. No matter which capacitor is used, a trade-off needs to be made between the capacitance value, the high voltage resistance capability, and the chip area occupied. Under the same integrated circuit process line width, the complexity and cost of the high voltage resistance process are significantly higher than those of the ordinary process. Therefore, in many MEMS products involving high voltage charge pump circuits, the size and cost of the signal conditioning circuit chip are usually higher than those of the MEMS structure chip, which also increases the size and cost of the final product accordingly. Summary of the invention

[0005] Based on this, the present invention provides a charge pump circuit structure and a micro charge pump, which can reduce product size, lower production costs, and achieve miniaturization and high integration of the charge pump.

[0006] In order to solve the above technical problems, a technical solution adopted by the present invention is: to provide a charge pump circuit structure, including: a circuit module integrated on a conditioning circuit chip and a capacitor module integrated on a MEMS structure chip, the circuit module is electrically connected to the capacitor module, the circuit module includes multiple stages of connected charge pump circuits, the output of the upper charge pump circuit serves as the input of the connected lower charge pump circuit, wherein the capacitor module is connected to the last stage charge pump circuit to increase the output of the last stage charge pump circuit.

[0007] According to one embodiment of the present invention, the capacitor module includes an energy storage capacitor, which includes a first electrode plate and a second electrode plate that are relatively and directly opposite to each other. Under the action of voltage, the first electrode plate and the second electrode plate generate electrostatic attraction and move relative to each other to reduce the capacitor spacing.

[0008] According to an embodiment of the present invention, the first electrode plate includes a first fixed anchor point and a plurality of first cantilever beams disposed on the first fixed anchor point, and the plurality of first cantilever beams are parallel and spaced apart from each other.

[0009] According to one embodiment of the present invention, the second electrode plate includes a second fixed anchor point and a plurality of second cantilever beams arranged on the second fixed anchor point, the number of the second cantilever beams is the same as the number of the first cantilever beams and the second cantilever beams are arranged in a one-to-one pair with the first cantilever beams.

[0010] According to one embodiment of the present invention, a first limit block is provided on the first electrode plate for limiting the movement process of the second electrode plate to control the capacitor spacing, and a second limit block is provided on the second electrode plate for limiting the movement process of the first electrode plate to control the capacitor spacing. The first limit block is set at the same potential as the first electrode plate, and the second limit block is set at the same potential as the second electrode plate.

[0011] According to one embodiment of the present invention, the first cantilever beam and the second cantilever beam have the same structure, and the cantilever beam includes a first vertical portion connected to a fixed anchor point, a horizontal portion connected to the first vertical portion, and a second vertical portion connected to the horizontal portion, and a first groove is formed between the horizontal portion and the second vertical portion.

[0012] According to one embodiment of the present invention, the first limiting block includes a vertical section matching the first groove and a bending section extending along the end of the vertical section toward the second vertical portion, and a second groove is formed between the vertical section and the bending section. When the second electrode plate moves to abut against the first limiting block, the second vertical portion is accommodated in the second groove, and the vertical section is accommodated in the first groove. The structure of the second limiting block is the same as that of the first limiting block.

[0013] According to an embodiment of the present invention, the energy storage capacitor is made of a silicon structure processed by DRIE deep reactive ion etching, the thickness of the energy storage capacitor is 5-80 μm, and in static state, the capacitance spacing of the energy storage capacitor is 0.5-4 μm.

[0014] According to an embodiment of the present invention, the capacitor module includes a filter capacitor, and the filter capacitor has the same processing method and thickness as the energy storage capacitor.

[0015] In order to solve the above technical problems, another technical solution adopted by the present invention is: to provide a micro charge pump, comprising: a substrate, a conditioning circuit chip, a MEMS structure chip and a charge pump circuit structure as described in any one of claims 1 to 9, wherein the conditioning circuit chip and the MEMS structure chip are stacked on the substrate from top to bottom, wherein the circuit module in the charge pump circuit structure is integrated on the conditioning circuit chip, and the capacitor module in the charge pump circuit structure is integrated on the MEMS structure chip.

[0016] The beneficial effects of the present invention are: by integrating the circuit module on the conditioning circuit chip and integrating the capacitor module on the MEMS structure chip, it is avoided to integrate too many capacitors in the conditioning circuit chip, thereby reducing the size and cost of the conditioning chip, and also reducing the demand of the conditioning circuit chip for expensive high-voltage resistant processing technology, thereby reducing the overall size and cost of the final product, and realizing the miniaturization and high integration of the charge pump. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of the structure of a micro charge pump according to an embodiment of the present invention;

[0018] Figure 2 is a schematic structural diagram of a charge pump circuit according to an embodiment of the present invention;

[0019] Figure 3 It is a schematic diagram of the three-dimensional structure of the energy storage capacitor of the first embodiment of the present invention;

[0020] Figure 4 for Figure 3 A top view of

[0021] Figure 5 A schematic diagram of the structure of an energy storage capacitor according to a second embodiment of the present invention;

[0022] Figure 6 It is a schematic structural diagram of the energy storage capacitor of the second embodiment of the present invention after the electrode plate is displaced.

[0023] The meanings of the symbols in the accompanying drawings are:

[0024] 100-micro charge pump; 1-substrate; 2-conditioning circuit chip; 3-MEMS structure chip; 200-charge pump circuit structure; 10-circuit module; 20-capacitor module; C1-energy storage capacitor; C2-filter capacitor; Vin-voltage input terminal; GND1-first voltage output terminal; GND2-second voltage output terminal; S1-first switch; S2-second switch; S3-third switch; S4-fourth switch; 211-first An electrode plate; 212-a second electrode plate; 2111-a first fixed anchor point; 2112-a first cantilever beam; 2113-a first limiting block; 2121-a second fixed anchor point; 2122-a second cantilever beam; 2123-a second limiting block; 2101-a first vertical portion; 2102-a horizontal portion; 2103-a second vertical portion; 2104-a first groove; 2105-a vertical section; 2106-a bent section; 2107-a second groove. DETAILED DESCRIPTION

[0025] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0026] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0028] like Figure 1 As shown, it is a schematic diagram of the structure of a micro charge pump according to an embodiment of the present invention. The micro charge pump 100 includes a substrate 1, a conditioning circuit chip 2, a MEMS structure chip 3, and a charge pump circuit structure (not shown in the figure). The conditioning circuit chip 2 and the MEMS structure chip 3 are stacked on the substrate 1 from top to bottom. Among them, the conditioning circuit chip 2 is also provided with functional modules such as a signal amplifier, a filter, and a power management, and the MEMS structure chip 3 is also provided with functional modules such as a sensor and an actuator.

[0029] like Figure 2As shown, it is a schematic diagram of the charge pump circuit structure of an embodiment of the present invention, and the charge pump circuit structure 200 includes a circuit module 10 integrated on a conditioning circuit chip 2 and a capacitor module 20 integrated on a MEMS structure chip 3. The circuit module 10 and the capacitor module 20 are electrically connected through gold wire bonding, eutectic bonding or melt bonding to achieve the function of a complete charge pump. Further, the circuit module 10 includes a multi-stage connected charge pump circuit, and the output of the upper charge pump circuit serves as the input of the connected lower charge pump circuit, wherein the capacitor module 20 is connected to the last stage charge pump circuit to increase the output of the last stage charge pump circuit. In this embodiment, the output voltage of the last stage charge pump circuit is the highest.

[0030] It should be noted that the MEMS structure chip 3 of the present embodiment is not specially configured to realize the charge pump circuit structure 200. The charge pump circuit structure 200 can be understood as including a part of the MEMS structure chip 3, namely the capacitor module 20. The output voltage of the charge pump circuit structure 200 connected to the capacitor module 20 is used to realize the functions of other functional modules of the MEMS structure chip 3. Furthermore, the capacitor module 20 can be a module with an independent energy storage function or a module on the MEMS structure chip 3 that combines other functions and energy storage functions.

[0031] The micro charge pump 100 of the present embodiment integrates the circuit module 10 on the conditioning circuit chip 2 and the capacitor module 20 on the MEMS structure chip 3, thereby avoiding integrating too many capacitors in the conditioning circuit chip 2, reducing the size and cost of the conditioning circuit chip 2, and also reducing the need for expensive high-voltage resistant processing technology of the conditioning circuit chip 2, thereby reducing the overall size and cost of the final product and realizing miniaturization and high integration of the charge pump.

[0032] Furthermore, the capacitor module 20 of this embodiment includes at least an energy storage capacitor C1, see Figure 2, the capacitor module 20 includes: an energy storage capacitor C1 for charging and discharging and a filter capacitor C2 for noise reduction; further, the energy storage capacitor C1 is made of a silicon structure processed by DRIE (Deep Reactive Ion Etching), the thickness of the energy storage capacitor C1 is 5-80μm, and the capacitor spacing of the energy storage capacitor C1 is 0.5-4μm when static. The filter capacitor C2 of this embodiment has the same processing method and thickness as the energy storage capacitor C1. In this way, the energy storage capacitor C1 and the filter capacitor C2 can have a larger electrode facing area, because the capacitance value is proportional to the electrode facing area and inversely proportional to the capacitor spacing. Therefore, when the electrode facing area increases, the capacitance value can be increased, and the filter cutoff frequency can be reduced, thereby reducing the ripple caused by voltage fluctuations during the repeated charging and discharging process of the energy storage capacitor C1, and when the charge pump outputs a higher voltage, the energy storage capacitor C1 will not be broken down.

[0033] For further information, see Figure 2 , taking the circuit module 10 including a first-stage charge pump circuit as an example, the circuit module 10 includes: a voltage input terminal Vin, a first voltage output terminal GND1, a second voltage output terminal GND2, a first switch S1, a second switch S2, a third switch S3 and a fourth switch S4, the second switch S2 and the third switch S3 are connected in parallel and connected to the voltage input terminal Vin, the third switch S3 is connected in series with the first switch S1, the first switch S1 is connected to the first voltage output terminal GND1, the second switch S2 is connected in series with the fourth switch S4, the fourth switch S4 is connected to the second voltage output terminal GND2, and the storage The energy storage capacitor C1 is connected in series between the second switch S2 and the first switch S1, and the filter capacitor C2 is connected in series between the fourth switch S4 and the second voltage output terminal GND2. The first voltage output terminal GND1 and the second voltage output terminal GND2 of this embodiment are common ground terminals; the first switch S1 and the second switch S2 are closed, and the third switch S3 and the fourth switch S4 are opened at the same time, so that the voltage across the energy storage capacitor C1 is the input voltage, the third switch S3 and the fourth switch S4 are closed, and the first switch S1 and the second switch S2 are opened at the same time, so that the voltage across the filter capacitor C2 is twice the input voltage.

[0034] For further information, see Figure 3 and Figure 4 The energy storage capacitor C1 includes a first electrode plate 211 and a second electrode plate 212 which are arranged opposite to each other. The polarities of the first electrode plate 211 and the second electrode plate 212 are opposite. Under the action of voltage, the first electrode plate 211 and the second electrode plate 212 generate an electrostatic attraction and move relative to each other to reduce the capacitor spacing. Because the capacitance value is inversely proportional to the capacitor spacing, the capacitance value can be increased when the capacitor spacing is reduced. The first electrode plate 211 and the second electrode plate 212 of this embodiment can move simultaneously or separately.

[0035] For further information, see Figure 3 and Figure 4 , the structure of the second electrode plate 212 and the first electrode plate 211 may be the same or different. In the present embodiment, the first electrode plate 211 includes a first fixed anchor point 2111 and a plurality of first cantilever beams 2112 disposed on the first fixed anchor point 2111, and the plurality of first cantilever beams 2112 are arranged in parallel and at intervals. Specifically, the second electrode plate 212 includes a second fixed anchor point 2121 and a plurality of second cantilever beams 2122 disposed on the second fixed anchor point 2121, and the plurality of second cantilever beams 2122 are arranged in parallel and at intervals. The number of the second cantilever beams 2122 is the same as the number of the first cantilever beams 2112, and the second cantilever beams 2122 are arranged in pairs with the first cantilever beams 2112. The distance between the paired first cantilever beams 2112 and the second cantilever beams 2122 is the capacitor spacing, and the capacitor spacing is 0.5-4μm in static state. The first arm beam 2112 can follow the movement of the first electrode plate 211 , and the second arm beam 2122 can follow the movement of the second electrode plate 212 .

[0036] In another embodiment, the structure of the second electrode plate 212 may be the same as or different from that of the first electrode plate 211. The first electrode plate 211 includes a first fixed anchor point 2111, a first support frame (not shown in the figure), a first elastic beam (not shown in the figure), and a first cantilever beam 2112, wherein the first cantilever beam 2112 is fixed to the first support frame, and the first support frame is fixed to the first fixed anchor point 2111 through the first elastic beam. The second electrode plate 212 includes a second fixed anchor point 2121, a second support frame (not shown in the figure), a second elastic beam (not shown in the figure), and a second cantilever beam 2122, wherein the second cantilever beam 2122 is fixed to the second support frame, and the second support frame is fixed to the second fixed anchor point 2121 through the second elastic beam. The electrostatic force generated by the first electrode plate 211 and the second electrode plate 212 of this embodiment causes the elastic beam to bend, and the elastic beam drives the cantilever beam and the support frame to move together.

[0037] For further information, see Figure 5, the first electrode plate 211 is provided with a first limit block 2113 for limiting the movement process of the second cantilever beam 2122 to control the capacitor spacing, the second electrode plate 212 is provided with a second limit block 2123 for limiting the movement process of the first cantilever beam 2112 to control the capacitor spacing, the first limit block 2113 is set at the same potential as the first electrode plate 211, and the second limit block 2123 is set at the same potential as the second electrode plate 212. In this embodiment, the number of the first limit blocks 2113 is the same as the number of the second cantilever beams 2122, and the first limit blocks 2113 and the second cantilever beams 2122 are set in a one-to-one correspondence, and the number of the second limit blocks 2123 and the first cantilever beams 2112 is the same, and the second limit blocks 2123 and the first cantilever beams 2112 are set in a one-to-one correspondence. In this embodiment, a limit block for controlling the lower limit of the capacitor spacing is set to ensure that the two electrode plates of the energy storage capacitor C1 will not be attracted due to electrostatic force, and the positive and negative electrodes of the energy storage capacitor will not touch each other, and the high voltage resistance of the capacitor structure is also improved. The limit block and the blocked electrode plate are set at the same potential to ensure that no charge loss occurs after the electrode plate touches the limit block.

[0038] For further information, see Figure 5 The first cantilever beam 2112 has the same structure as the second cantilever beam 2122. The cantilever beam includes a first vertical portion 2101 connected to a fixed anchor point, a horizontal portion 2102 connected to the first vertical portion 2101, and a second vertical portion 2103 connected to the horizontal portion 2102. A first groove 2104 is formed between the horizontal portion 2102 and the second vertical portion 2103.

[0039] The first limit block 2113 has the same structure as the second limit block 2123. The limit block includes a vertical section 2105 matched with the first slot 2104 and a bent section 2106 extending from the end of the vertical section 2105 toward the second vertical portion 2103. A second slot 2107 is formed between the vertical section 2105 and the bent section 2106. When the second cantilever beam 2122 moves to abut against the first limit block 2113, as shown in FIG. Figure 6 As shown, the second vertical portion 2103 is received in the second slot 2107, and the vertical section 2105 is received in the first slot 2104; when the first cantilever beam 2112 moves to abut against the second stopper 2123, the second vertical portion 2103 is received in the second slot 2107, and the vertical section 2105 is received in the first slot 2104. The first cantilever beam 2112 and the second cantilever beam 2122 of this embodiment can move simultaneously or separately.

[0040] Furthermore, the filter capacitor C2 has the same structure as the energy storage capacitor C1, which has been described in detail above. The structure of the filter capacitor C2 is not repeated here. In this embodiment, the noise in the charge pump output voltage is reduced by adding the filter capacitor C2 to the second voltage output terminal GND2.

[0041] In one embodiment, the thickness of the energy storage capacitor C1 is 60um, and the static capacitor spacing is 2um. When the high voltage generated by the micro charge pump 100 is loaded on both ends of the electrodes of the energy storage capacitor C1, the electrostatic attraction causes the two electrode plates to shift and reduce the capacitor spacing, but the capacitor spacing is limited to 0.2um by the limit block. At this time, the cantilever beam touches the limit block, but it will not cause charge leakage. At this time. The capacitor spacing is reduced by 10 times compared to the static state, and the capacitance value increases by 10 times.

[0042] The charge pump circuit structure 200 of the present embodiment replaces the MOM and MIM capacitors in the charge pump circuit in the original conditioning circuit chip 2 by adding an additional special capacitor structure that can be connected to the conditioning chip in the MEMS structure chip 3, thereby balancing the size and cost of the MEMS structure chip 3 and the conditioning circuit chip 2, and also reducing the demand of the conditioning circuit chip 2 for expensive high-voltage resistant processing technology, thereby also reducing the overall size and cost of the final product. In addition, by adding a stopper in the capacitor structure, it is ensured that the capacitor module 20 can reduce the capacitor spacing as much as possible, thereby improving the capacitance value as much as possible, both meeting the high-voltage output requirements and protecting the capacitor module from being damaged. Therefore, the capacitor module 20 of the present embodiment can not only realize the improvement of capacitance value, but also improve the high-voltage resistance and reduce the occupied chip area at the same time, compared with conventional MOM capacitors or MIM capacitors, there is no need to make a trade-off between the realization of capacitance value, high-voltage resistance and the occupied chip area.

[0043] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0044] The above embodiments only express the preferred implementation modes of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for those of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A charge pump circuit structure, characterized in that: include: A circuit module integrated on a conditioning circuit chip and a capacitor module integrated on a MEMS structure chip, wherein the circuit module is electrically connected to the capacitor module, wherein the circuit module comprises a plurality of connected charge pump circuits, wherein the output of the upper charge pump circuit serves as the input of the connected lower charge pump circuit, wherein the capacitor module is connected to the last charge pump circuit to increase the output of the last charge pump circuit; The capacitor module includes an energy storage capacitor, and the energy storage capacitor includes a first electrode plate and a second electrode plate that are arranged opposite to each other. Under the action of voltage, the first electrode plate and the second electrode plate generate an electrostatic attraction and move relative to each other to reduce the capacitor spacing. The energy storage capacitor is made of a silicon structure processed by DRIE deep reactive ion etching, the thickness of the energy storage capacitor is 5-80 μm, and the capacitance spacing of the energy storage capacitor is 0.5-4 μm when static; The capacitor module includes a filter capacitor, and the filter capacitor and the energy storage capacitor have the same processing method and thickness; The circuit module includes: a voltage input terminal Vin, a first voltage output terminal GND1, a second voltage output terminal GND2, a first switch S1, a second switch S2, a third switch S3 and a fourth switch S4, the second switch S2 and the third switch S3 are connected in parallel and connected to the voltage input terminal Vin, the third switch S3 is connected in series with the first switch S1, the first switch S1 is connected to the first voltage output terminal GND1, the second switch S2 is connected in series with the fourth switch S4, the fourth switch S4 is connected to the second voltage output terminal GND2, the energy storage capacitor C1 is connected in series between the second switch S2 and the first switch S1, and the filter capacitor C2 is connected in series between the fourth switch S4 and the second voltage output terminal GND2; The first electrode plate is provided with a first limit block for limiting the movement of the second electrode plate to control the capacitor spacing, and the second electrode plate is provided with a second limit block for limiting the movement of the first electrode plate to control the capacitor spacing. The first limit block is set at the same potential as the first electrode plate, and the second limit block is set at the same potential as the second electrode plate.

2. The charge pump circuit structure according to claim 1, characterized in that: The first electrode plate includes a first fixed anchor point and a plurality of first cantilever beams disposed on the first fixed anchor point, and a plurality of second cantilever beams are disposed in parallel and at intervals.

3. The charge pump circuit structure according to claim 2, characterized in that: The second electrode plate includes a second fixed anchor point and a plurality of second cantilever beams arranged on the second fixed anchor point. The number of the second cantilever beams is the same as the number of the first cantilever beams, and the second cantilever beams are arranged in a one-to-one pair with the first cantilever beams.

4. The charge pump circuit structure according to claim 3, characterized in that: The first cantilever beam and the second cantilever beam have the same structure. The cantilever beam includes a first vertical portion connected to a fixed anchor point, a horizontal portion connected to the first vertical portion, and a second vertical portion connected to the horizontal portion. A first groove is formed between the horizontal portion and the second vertical portion.

5. The charge pump circuit structure according to claim 4, characterized in that: The first limit block includes a vertical section that cooperates with the first groove and a bent section that extends along the end of the vertical section toward the second vertical portion. A second groove is formed between the vertical section and the bent section. When the second cantilever beam moves to abut against the first limit block, the second vertical portion is accommodated in the second groove, and the vertical section is accommodated in the first groove. The structure of the second limit block is the same as that of the first limit block.

6. A micro charge pump, characterized in that: include: A substrate, a conditioning circuit chip, a MEMS structure chip, and a charge pump circuit structure as described in any one of claims 1 to 5, wherein the conditioning circuit chip and the MEMS structure chip are stacked on the substrate from top to bottom, wherein the circuit module in the charge pump circuit structure is integrated on the conditioning circuit chip, and the capacitor module in the charge pump circuit structure is integrated on the MEMS structure chip.

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