A method, device, medium and device for optimizing the edge washing width of a trench process

Abstract

The present invention discloses a method for optimizing the edge washing width of a groove process. By acquiring first process data of a groove workpiece, an initial condition or initial value of optimization processing is obtained, thereby initializing a related system or device. A related embodiment reduces the probability of wafer edge peeling during a tungsten CMP process by adjusting the DTI development edge washing width, thereby effectively reducing tungsten peeling defects. The embodiment of the present invention optimizes the process only on the basis of the original equipment and process without involving equipment replacement and production line update, thereby greatly reducing the number of BSI process defects and significantly improving the chip yield.

Description

Technical Field

[0001] The invention belongs to the field of microelectronic technology, and in particular relates to a method, a device, a medium and a device for optimizing the edge washing width of a groove process. Background Art

[0002] The increase in the density of characteristic patterns of microelectronic circuits and the increase in the number of process film layers make the planarization process increasingly important, especially CMP, which has been widely used in the process of different circuits because of its global planarization GP (Global Planarization) capability and its suitability for processing a wide range of materials.

[0003] However, CMP is one of the few processes that can introduce particulate impurities, and its cleaning process becomes a necessary step. When CMP is performed on workpieces with deep trench DTI (Deep Trench Isolation), the introduction of impurity particles often leads to a reduction in device yield.

[0004] The inventors have found that the reduction in yield of certain devices is strongly correlated with the introduction of CMP impurities, such as Fig.10 As shown, the corresponding technical methods are considered to improve the yield of devices in specific fields by improving the process parameters of the edge cleaning process and enhancing the effect of CMP. Summary of the invention

[0005] The invention discloses a method for optimizing the edge washing width of a groove process. By acquiring first process data of a groove workpiece, initial conditions or initial values ​​for optimization processing are obtained, thereby realizing initialization of a related system or device.

[0006] Among them, the first process data includes the maximum edge washing width of the first groove; the groove workpiece is a workpiece with at least one groove structure that is intended to be processed by the process to be optimized; the first groove is a groove structural component of the groove workpiece; the maximum edge washing width is determined by the structural limitation of the processing equipment of the groove workpiece, and the maximum edge washing width is obtained by measurement or given by the machine limit mechanism; the measurement may include online measurement and offline measurement, and the offline measurement may include measurement of similar equipment.

[0007] Furthermore, by adjusting the edge washing width of the groove workpiece to a first edge washing width, the device to be optimized is initially measured or tested.

[0008] The first edge washing width is smaller than the maximum edge washing width; a groove workpiece is obtained by etching, and a first medium is filled into the first groove, and then a first planarization process is used to remove the first medium to be removed from the surface of the groove workpiece.

[0009] Furthermore, by acquiring a first failure image related to the groove workpiece defect or an image of particles detached from the first medium, information feedback on the current edge washing state is achieved.

[0010] The first failure image or the image of the first medium detached particles records an image of defects or particles generated by cracking and peeling of the groove workpiece at the wafer edge of the groove workpiece during the first planarization process.

[0011] By obtaining the minimum step length of the edge washing width change of the groove workpiece processing equipment and obtaining the first optimization number, the intermediate data required in the optimization process can be further obtained.

[0012] The first optimization number is obtained by rounding the quotient of the maximum edge-washing width and the minimum step length.

[0013] Furthermore, with the minimum step length as an interval, the maximum edge-washing width is reduced by the minimum step length in sequence to obtain the Nth edge-washing width, and the Nth failure image is obtained in sequence.

[0014] Among them, N is at least 2, and N is not greater than the first optimization number.

[0015] Furthermore, by acquiring the second edge washing width, an optimized edge washing parameter is obtained.

[0016] Among them, the second edge washing width is the edge washing width corresponding to the Nth failed image or the Nth image of the first medium detached particles with the least defects or particles from the first failed image or the image of the first medium detached particles to the Nth failed image or the Nth image of the first medium detached particles.

[0017] Furthermore, the aspect ratio of the first trench should be greater than a preset value; and the construction of the trench workpiece may include the construction of a dummy gate; the Nth failure image includes a failure image of the trench workpiece and an image of particles detached from the first medium of the trench workpiece.

[0018] The change of the Nth edge-washing width may be reversed; the reverse change means starting from the smallest edge-washing width, gradually changing the Nth edge-washing width, each time changing by a preset step length, which may be a specified multiple of the smallest step length.

[0019] It should be noted that the second edge washing width is the edge washing width after the groove workpiece is optimized or the edge washing width after the preset batch of workpieces is optimized.

[0020] Furthermore, the trench workpiece may adopt a DTI deep trench isolation structure; the pattern of the DTI deep trench isolation structure is obtained by etching, and the edge development and edge washing area of ​​the wafer is opened.

[0021] The first medium is a light-proof and non-hydrophilic material; the first medium is filled in the bottom and inside of the first groove and fills the groove to a height higher than a preset height of the first groove or covers a surface specified by the groove workpiece or other groove positions.

[0022] The first dielectric here can be metal tungsten or copper; the pattern of its DTI deep trench isolation structure is obtained by ion etching or wet etching; wherein the depth of the DTI deep trench isolation structure is 2000 to 6000Å.

[0023] Further, the edge development and edge washing WWE area of ​​the groove workpiece is opened by an etching process; the first dielectric filling is performed by a PVD physical vapor deposition method, and the filling thickness is 1500 to 5000 Å; wherein the edge etching area of ​​the groove workpiece is also filled.

[0024] Furthermore, the excess first dielectric on the surface of the DTI deep trench isolation structure is removed by a CMP process; for example, tungsten metal, copper metal or other opaque, non-hydrophilic materials are removed; wherein a set of optimized edge washing widths of the embodiment is between 2.3-3.8 mm.

[0025] Furthermore, an Nth failure image of the groove workpiece under the same process on the same machine is obtained; wherein the Nth failure image corresponds to the same batch of wafers or substrates.

[0026] Further, an image comparison or analysis is performed on the Nth failure image to obtain the ratio of the failure part to the wafer or substrate, and the edge washing width corresponding to the Nth failure image with the lowest failure part ratio is selected as the Nth edge washing width; the Nth edge washing width is used as a process parameter for processing a new batch of groove workpieces (100), and the parameter corresponding to the first process data is updated.

[0027] Furthermore, the distribution law of defects in the Nth failure image is positively correlated with the groove workpiece, that is, the distribution of defects in the Nth failure image and the distribution of defects in the groove workpiece conform to the same or similar probability distribution.

[0028] The first trench is constructed on an epitaxial layer, and the epitaxial layer is constructed on a silicon base layer.

[0029] Corresponding to the method of the present invention, the present invention also discloses a washing edge width adjustment device, a computer storage medium, an imaging device and a cleaning device.

[0030] Among them, the edge washing width adjustment device includes an edge washing width optimization unit and an edge washing width adjustment mechanism, and the remaining products are developed based on the core invention concept.

[0031] Specifically, the width optimization unit optimizes the edge-washing width according to any of the above methods and obtains a corresponding second edge-washing width.

[0032] Furthermore, the edge-washing width adjustment mechanism adopts a mechanism including a one-step unit to adjust the edge-washing width; the adjustment mechanism adjusts the actual edge-washing width of the machine according to the second edge-washing width obtained by the width optimization unit.

[0033] By obtaining the yield of a preset batch of products of the groove workpiece, if the yield is lower than a preset value or the fluctuation range is greater than the preset value, the corresponding second edge washing width is obtained again according to the method of the present invention.

[0034] The present invention reduces the peeling of metal tungsten at the edge of the wafer during the CMP process by adjusting the DTI development edge washing width, thereby effectively reducing related defects. The embodiment of the present invention does not involve the replacement of equipment and the update of production lines, but only optimizes the process based on the original equipment and process, greatly reduces the number of BSI process defects, and significantly improves the chip yield.

[0035] It should be noted that the terms "first", "second" and similar terms used in this article are only for describing the various components in the technical solution, and do not constitute a limitation of the technical solution, nor can they be understood as an indication or suggestion of the importance of the corresponding elements; elements with "first", "second" and similar terms indicate that the corresponding technical solution contains at least one of the element. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solution of the present invention and facilitate further understanding of the technical effects, technical features and purposes of the present invention, the present invention is described in detail below in conjunction with the accompanying drawings. The accompanying drawings constitute an essential part of the specification and are used together with the embodiments of the present invention to illustrate the technical solution of the present invention, but do not constitute a limitation to the present invention.

[0037] The same reference numerals in the accompanying drawings represent the same components, specifically:

[0038] Figure 1 is a tungsten peeling trend diagram of an embodiment of the present invention;

[0039] Figure 2 Schematic diagram of the correlation between defect-related yield failure and DTI development edge washing width according to an embodiment of the present invention;

[0040] Figure 3-6 Schematic diagram of defect-related failures at different DTI development and edge washing widths;

[0041] Figure 7 This is a schematic diagram of the source of tungsten exfoliation;

[0042] Figure 8 It is a schematic diagram of different developing and washing edge widths;

[0043] Fig. 9 It is a top view schematic diagram of tungsten peeling;

[0044] Fig.10 This is a comparison diagram of the wafer failure location and the metal particle peeling location;

[0045] Fig.11 This is a schematic diagram of the position of tungsten exfoliated particles according to an embodiment of the present invention;

[0046] Fig.12 Electron microscope images of exfoliated particles in other embodiments of the present invention;

[0047] Fig.13 The electron microscope images and related analysis images of the embodiments of the present invention are shown in FIG.

[0048] Fig.14 is a flow chart of an embodiment of the present invention;

[0049] Fig.15 The present invention is a block diagram of the structure of the embodiment; wherein:

[0050] 100-groove workpiece;

[0051] 101- first groove;

[0052] 10N- first edge washing width;

[0053] 111- Maximum edge washing width of the embodiment of the present invention;

[0054] 201-defect related failure diagram when the DTI development edge washing width is 3.8mm in the embodiment of the present invention;

[0055] 202-defect related failure diagram when the DTI development edge washing width is 2.7mm in the embodiment of the present invention;

[0056] 203-defect related failure diagram of the DTI development edge washing width of the embodiment of the present invention when it is 2.5mm;

[0057] 204-defect related failure diagram when the DTI development edge washing width is 2.3mm in the embodiment of the present invention;

[0058] 222-a schematic diagram of the position of the second edge washing width according to an embodiment of the present invention;

[0059] 501-first medium;

[0060] 555-Schematic diagram of metal tungsten peeling in an embodiment of the present invention;

[0061] 666- electron microscope image of Example 6 of the present invention;

[0062] 777- Electron microscope image of embodiment 7 of the present invention;

[0063] 888-Electron microscope image of the eighth embodiment of the present invention

[0064] 901-Energy Dispersive Spectrometer (EDS) image of particulate matter in an embodiment of the present invention;

[0065] 902- electron microscope reference diagram of the embodiment of the present invention;

[0066] 999-Schematic diagram of failure point of embodiment nine of the present invention. DETAILED DESCRIPTION

[0067] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. Of course, the specific embodiments described below are only for explaining the technical solutions of the present invention, rather than for limiting the present invention. In addition, the parts described in the embodiments or the accompanying drawings are only examples of the relevant parts of the present invention, rather than the whole of the present invention.

[0068] like Fig.14 As shown, the optimization method for the edge washing width of the groove process according to the embodiment of the present invention includes step 20 of obtaining the maximum edge washing width and initializing, step 30 of constructing the workpiece and obtaining basic data, step 40 of feature image acquisition and comparing feature information, and related step 50 such as modifying process parameters; wherein, the preceding step 10 completes the preparation of related equipment, components, etc. in the scenario of the embodiment of the present invention.

[0069] like Figure 8 As shown, by obtaining the first process data of the groove workpiece 100; including the maximum edge washing width 111 of the first groove 101; the groove workpiece 100 is a workpiece having at least one groove structure that is intended to be processed by the process to be optimized; the first groove 101 is a groove structural component of the groove workpiece 100; the maximum edge washing width 111 is determined by the structural limitation of the processing equipment of the groove workpiece 100, and the maximum edge washing width 111 is obtained by measurement or given by the machine limit mechanism; the measurement includes online measurement and offline measurement, and the offline measurement includes measurement of similar equipment.

[0070] Furthermore, the edge washing width of the groove workpiece 100 is adjusted to a first edge washing width 10N; and the first edge washing width 10N should be smaller than the maximum edge washing width 111 .

[0071] Furthermore, the trench workpiece 100 is obtained by etching, and the first dielectric 501 is filled into the first trench 101 , and then the first dielectric 501 to be removed from the surface of the trench workpiece 100 is removed by a first planarization process.

[0072] like Fig.10As shown, by obtaining a first failure image 200 or a first medium detached particle image 300 related to a defect of the groove workpiece 100; wherein the first failure image 200 or the first medium detached particle image 300 records an image of defects or particles generated by chipping and peeling of the groove workpiece 100 at the wafer edge of the groove workpiece 100 during the first planarization process.

[0073] Furthermore, the minimum step length of the edge washing width change of the groove workpiece 100 processing equipment is obtained, and the first optimization number is further obtained; wherein the first optimization number is obtained by rounding the quotient of the maximum edge washing width 111 and the minimum step length.

[0074] like Figure 3-6 As shown, with the minimum step length as the interval, the maximum edge washing width 111 is reduced by the minimum step length to obtain the Nth edge washing width, and the Nth failure images 201, 202, 203, 204 are obtained in sequence; wherein N is at least 2, and N is not greater than the first optimization number.

[0075] like Figure 8 As shown, by further acquiring the second edge washing width 222, the optimized edge washing parameters are obtained.

[0076] Specifically, the second edge washing width 222 is the edge washing width corresponding to the Nth failed image or the Nth image of first medium detached particles having the least defects or particles from the first failed image 200 or the image 300 of first medium detached particles to the Nth failed image or the Nth image of first medium detached particles.

[0077] Further, the aspect ratio of the first trench 101 is greater than a preset value; and the construction process of the trench workpiece 100 may include a construction process of a dummy gate.

[0078] like Figure 3-6 As shown, the Nth failure images 201, 202, 203, and 204 include a failure image of the groove workpiece 100 and an image of particles separated from the first medium of the groove workpiece 100. Fig.10 As shown, it can be seen that the workpiece failure image of the embodiment of the present invention has a strong correlation with the image of the detached ions.

[0079] Furthermore, in the above solution, the change of the Nth edge-washing width may be reversed; that is, starting from the smallest edge-washing width, the Nth edge-washing width is gradually changed, and relevant processing and comparison are performed until the optimized parameters are obtained through comparison.

[0080] Among them, Figure 8 As shown, the second edge cleaning width 222 is the optimized edge cleaning width of the groove workpiece 100 or the optimized edge cleaning width of a preset batch of workpieces.

[0081] Furthermore, if the trench workpiece 100 adopts a DTI deep trench isolation structure, the pattern of the DTI deep trench isolation structure is obtained by etching, and the edge development and edge washing area of ​​the wafer is opened.

[0082] The method is also applicable if the first medium 501 is a light-proof, non-hydrophilic material and is filled at the bottom of the first groove 101 or in the groove and exceeds a preset height of the first groove 101 or covers a specified surface of the groove workpiece 100 or other groove positions.

[0083] When the first dielectric is metal tungsten, the pattern of the DTI deep trench isolation structure is obtained by ion etching or wet etching; and the depth of the DTI deep trench isolation structure can be 2000 to 6000Å.

[0084] Among them, Figure 7 The groove workpiece edge 555 is shown with the developed edge wash WWE region opened by the etching process.

[0085] Furthermore, the first dielectric 501 may be filled by a PVD physical vapor deposition method, and the thickness of the filling may be 1500 to 5000 Å; wherein the edge etched area of ​​the groove workpiece 100 is also filled.

[0086] Furthermore, if Figure 7 The redundant first dielectric 501 tungsten metal on the surface of the DTI deep trench isolation structure is removed by a CMP process. The tungsten metal is a light-proof and non-hydrophilic material.

[0087] like Figure 1 and Figure 2 As shown, the edge washing width of the embodiment of the present invention is between 2.3-3.8 mm. Figure 2 It was found that a wash edge width of 2.5 gave the best results.

[0088] Furthermore, an Nth failure image may be acquired on the groove workpiece 100 under the same process on the same machine, and the Nth failure image corresponds to the same batch of wafers or substrates.

[0089] Among them, by performing image comparison or analysis on the Nth failure image, the ratio of the failed part to the wafer or substrate is obtained, and the edge washing width corresponding to the Nth failure image with the lowest ratio of the failed part is selected as the Nth edge washing width; the Nth edge washing width is used as the process parameter for processing a new batch of groove workpieces, and the parameters corresponding to the process data are updated.

[0090] It can be found that the distribution law of defects in the Nth failure image is positively correlated with the groove workpiece 100; that is, the distribution of defects in the Nth failure image and the distribution of defects in the groove workpiece 100 conform to the same or similar probability distribution.

[0091] like Figure 8As shown, the first trench 101 may be formed on an epitaxial layer, which is formed on a silicon substrate layer.

[0092] like Fig.15 As shown, the embodiment of the present invention further discloses a washing edge width adjustment device, including a washing edge width optimization unit 11 and a washing edge width adjustment mechanism 22 .

[0093] The width optimization unit 11 optimizes the edge-washing width according to the above-mentioned related methods and obtains the corresponding second edge-washing width 222 .

[0094] The edge washing width adjustment mechanism 22 includes a stepping mechanism, which adjusts the actual edge washing width of the machine according to the second edge washing width 222 obtained by the width optimization unit 11, thereby optimizing the edge washing process.

[0095] Further, the yield of a preset batch of products of the groove workpiece 100 is obtained. If the yield is lower than a preset value or the fluctuation range is greater than a preset value, the corresponding second edge washing width 222 is obtained again according to any of the above methods; wherein, Figure 1 and Figure 2 As shown, the embodiment of the present invention obtains an optimized second edge-washing width 222 , which is 2.5 mm.

[0096] Furthermore, the present invention also discloses a computer storage medium, an imaging device and a related cleaning device. The above products are regarded as applications of the embodiments of the present invention in different product fields and will naturally fall within the protection scope of the present invention.

[0097] The present invention reduces the probability of wafer edge peeling during the tungsten CMP process by adjusting the DTI development edge washing width, thereby effectively reducing tungsten peeling defects; the embodiment of the present invention only optimizes the process based on the original equipment and process without involving equipment replacement and production line update, thereby greatly reducing the number of BSI process defects and significantly improving the chip yield.

[0098] It should be noted that the above embodiments are only for more clearly illustrating the technical solutions of the present invention. Those skilled in the art will understand that the implementation methods of the present invention are not limited to the above contents, and obvious changes, replacements or substitutions based on the above contents do not exceed the scope of the technical solutions of the present invention; other implementation methods will also fall within the scope of the present invention without departing from the concept of the present invention.

Claims

1. A method for optimizing the edge washing width of a groove process, characterized in that: include: Acquiring first process data of a groove workpiece (100); the first process data comprising a maximum edge-washing width (111) of a first groove (101); the groove workpiece (100) being a workpiece having at least one groove structure and intended to be processed by the process to be optimized; the first groove (101) being a groove structural component of the groove workpiece (100); the maximum edge-washing width (111) being determined by a structural limitation of a processing device for the groove workpiece (100), the maximum edge-washing width (111) being obtained by measurement or given by a machine position limiting mechanism; the measurement comprising online measurement and offline measurement, the offline measurement comprising measurement of similar equipment; adjusting the edge-washing width of the groove workpiece (100) to a first edge-washing width (10N); the first edge-washing width (10N) being smaller than the maximum edge-washing width (111); The groove workpiece (100) is obtained by etching, and a first medium (501) is filled into the first groove (101), and the first medium (501) to be removed from the surface of the groove workpiece (100) is removed by a first flattening process; a first failure image (200) or an image (300) of particles detached from the first medium related to a defect of the groove workpiece (100) is obtained; the first failure image (200) or the image (300) of particles detached from the first medium records an image of defects or particles generated by cracking and peeling of the groove workpiece (100) at the edge of the wafer of the groove workpiece (100) during the first flattening process; a minimum step length of a change in the edge washing width of a processing device for the groove workpiece (100) is obtained, and a first optimization number is obtained; the first optimization number is calculated by dividing the maximum edge washing width (111) by the minimum step length of the edge washing width (111) of the processing device for the groove workpiece (100). The quotient of the small step length is rounded off; with the minimum step length as an interval, the maximum edge washing width (111) is reduced in turn by the minimum step length to obtain the Nth edge washing width, and the Nth failure images (201, 202, 203, 204) are obtained in turn; wherein N is at least 2, and N is not greater than the first optimization number; a second edge washing width (222) is obtained, wherein the second edge washing width (222) is the edge washing width corresponding to the Nth failure image or the Nth image of the first medium detached particles with the least defects or particles from the first failure image (200) or the image (300) of the first medium detached particles to the Nth failure image or the Nth image of the first medium detached particles; the second edge washing width (222) is the optimized edge washing width of the groove workpiece (100) or the optimized edge washing width of a preset batch of workpieces.

2. The method of claim 1, wherein: The aspect ratio of the first groove (101) is greater than a preset value; the construction process of the groove workpiece (100) includes the construction process of a dummy gate; the Nth failure image (201, 202, 203, 204) includes a failure image of the groove workpiece (100) and an image of particles separated from the first medium of the groove workpiece (100); the change of the Nth edge wash width is reversed; the reverse process means that starting from the minimum edge wash width, the Nth edge wash width is gradually changed.

3. The method of claim 2, wherein: The trench workpiece (100) adopts a DTI deep trench isolation structure; a pattern of the DTI deep trench isolation structure is obtained by etching, and a wafer edge development and edge washing area is opened.

4. The method of claim 3, wherein: The first medium (501) is a light-proof, non-hydrophilic material; the first medium (501) is filled at the bottom of the first groove (101), in the groove, and fills the first groove (101) to a preset height or covers a specified surface of the groove workpiece (100) or other groove positions.

5. The method of claim 3, wherein: The first medium is metal tungsten or copper.

6. The method of claim 5, wherein: The pattern of the DTI deep trench isolation structure is obtained by ion etching or wet etching; the depth of the DTI deep trench isolation structure is 2000 to 6000Å; the edge (555) of the trench workpiece is opened by an etching process.

7. The method of claim 6, wherein: The first medium (501) is filled by a PVD physical vapor deposition method, and the thickness of the first medium (501) is 1500 to 5000 Å; wherein the edge etched area of ​​the groove workpiece (100) is also filled.

8. The method of claim 7, wherein: The first medium (501) that is redundant on the surface of the DTI deep trench isolation structure is removed by a CMP process; the first medium (501) comprises tungsten metal, copper metal or other opaque and non-hydrophilic materials; the edge washing width is between 2.3-3.8 mm.

9. The method according to any one of claims 1 to 8, characterized in that: Also includes: Acquiring the Nth failure image of the groove workpiece (100) produced under the same process and on the same machine; The Nth failure image corresponds to the same batch of wafers or substrates; Performing image comparison or analysis on the Nth failure image to obtain the ratio of the failure portion relative to the wafer or the substrate, selecting the edge cleaning width corresponding to the Nth failure image with the lowest failure portion ratio as the Nth edge cleaning width; and using the Nth edge cleaning width as a process parameter for processing a new batch of the groove workpieces (100).

10. The method of claim 9, wherein: The distribution law of defects in the Nth failure image is positively correlated with the groove workpiece (100); the positive correlation means that the distribution of defects in the Nth failure image and the distribution of defects in the groove workpiece (100) conform to the same or similar probability distribution; the first groove (101) is constructed on an epitaxial layer, and the epitaxial layer is constructed on a silicon base layer.

11. A washing edge width adjustment device, comprising: A side-washing width optimization unit (11), a side-washing width adjustment mechanism (22); the width optimization unit (11) optimizes the side-washing width according to any method of claims 1 to 10 and obtains a corresponding second side-washing width (222); the side-washing width adjustment mechanism (22) comprises a stepping mechanism; the side-washing width adjustment mechanism (22) adjusts the actual side-washing width of the machine according to the second side-washing width (222) obtained by the width optimization unit (11).

12. The apparatus of claim 11, comprising: The yield of a preset batch of products of the groove workpiece (100) is obtained, and if the yield is lower than a preset value or the fluctuation range is greater than a preset value, the corresponding second edge washing width (222) is obtained again according to any method of claims 1-10.

13. The apparatus of claim 11, wherein: The second edge washing width (222) is 2.5 mm.

14. A computer storage medium comprising: A storage medium for storing a computer program; when the computer program is executed by a microprocessor, the method according to any one of claims 1 to 10 is implemented.

15. An imaging device, wherein: The manufacturing process of the imaging sensor of the device includes the manufacturing steps given in any method as claimed in claims 1 to 10; the imaging sensor adopts a BSI back-illuminated CSI structure.

16. A cleaning device comprising: The apparatus of claim 11 or 12 and / or the computer storage medium of claim 14.

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