Method for treating semiconductor surface defects and method for preparing semiconductor device

Abstract

The invention discloses a method for processing semiconductor surface defects and a method for preparing semiconductor devices, wherein the method for processing semiconductor surface defects comprises: placing a semiconductor device in a plasma processing device, wherein the semiconductor device comprises a substrate and a deposition layer formed on the surface of the substrate, wherein the deposition layer is provided with bubbles; and plasma bombarding the surface of the deposition layer to break the bubbles, thereby making the surface of the deposition layer flat. The method for processing semiconductor surface defects according to an embodiment of the present invention can make the semiconductor surface flatter and improve the yield of semiconductor devices.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to a method for processing semiconductor surface defects and a method for preparing a semiconductor device. Background Art

[0002] In the existing semiconductor device process, when a thin film layer is deposited, due to the influence of residual gas on the surface, the gas is wrapped under the film layer, forming protruding bubbles on the surface of the film layer, resulting in an uneven surface of the film layer, especially in the hard mask layer process. When the film layer is etched at the end of the process, the top of the protruding bubble is easily etched to form a pointed protrusion, and the pointed protrusion is easily peeled off and falls into the etching groove, resulting in particle obstruction of the semiconductor device after etching. In addition, during the etching process, due to the formation of bubbles, the etching gas or solution enters the bubbles, the etching width changes, and side etching problems are easily caused, resulting in an increase in the etching width and affecting the subsequent abnormal yield. Summary of the invention

[0003] The object of the present invention is to provide a method for processing semiconductor surface defects, which can make the semiconductor surface smoother and improve the yield of semiconductor devices.

[0004] A method for processing semiconductor surface defects according to an embodiment of the present invention includes: placing a semiconductor device in a plasma processing device, the semiconductor device including a substrate and a deposition layer formed on the surface of the substrate, the deposition layer forming bubbles; plasma bombarding the surface of the deposition layer to break the bubbles, so that the surface of the deposition layer is smooth.

[0005] According to some embodiments of the present invention, the deposited layer is formed as a silicon-containing compound layer containing silicon-hydrogen bonds. Borane gas is used for plasma bombardment when plasma bombardment is performed on the surface of the deposited layer, and the silicon-hydrogen bonds are broken and boron-hydrogen bonds with stable bond energy are formed.

[0006] Optionally, after plasma bombardment is performed on the surface of the deposited layer, a silicon nitride layer containing boron-hydrogen bonds and covering the deposited layer is formed on the surface of the deposited layer.

[0007] Optionally, the flow rate of the borane gas is 2000-5000 sccm, the process temperature is 400-480° C., and the process pressure is 2-5 Torr.

[0008] Optionally, the radio frequency power is 300-800W.

[0009] Optionally, in the step of forming a deposition layer on the surface of the substrate, silane gas and ammonia gas are used as raw material gases for forming the deposition layer, and the bubbles contain residual generated gas after the deposition layer is formed. After the bubbles are burst, the following step is also included: extracting the gas released after the bubbles are burst.

[0010] Optionally, the deposited layer is a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer or an amorphous silicon (a-Si) layer.

[0011] Optionally, when plasma bombarding is performed on the surface of the deposited layer, an inert gas is used as a carrier gas.

[0012] Furthermore, the flow rate of the inert gas is 1000-3000 sccm.

[0013] The invention also provides a method for preparing a semiconductor device.

[0014] The method for preparing a semiconductor device according to an embodiment of the present invention includes: providing a semiconductor substrate; using plasma enhanced chemical vapor deposition to form a stacked multi-layer deposition layer on the surface of the semiconductor, wherein the deposition layer has bubbles; when forming the multi-layer deposition layer, at least the deposition layer located at the bottom layer is subjected to plasma bombardment to break the bubbles, and then other deposition layers are formed on the surface of the bottom layer; and graphing the multi-layer deposition layer.

[0015] According to some embodiments of the present invention, the bottommost deposited layer is formed as a silicon compound layer containing silicon-hydrogen bonds. When the bottommost deposited layer is plasma bombarded, borane gas is used for plasma bombardment, and the silicon-hydrogen bonds are broken to form boron-hydrogen bonds with stable bond energy.

[0016] Optionally, after the bottommost deposited layer is subjected to plasma bombardment, a silicon compound layer containing boron-hydrogen bonds is formed on the surface of the bottommost deposited layer, and in the step of forming other deposited layers on the surface of the bottommost deposited layer, the other deposited layers are formed on the surface of the silicon compound layer containing boron-hydrogen bonds.

[0017] According to some embodiments of the present invention, the deposition layer is formed as a mask layer.

[0018] Optionally, the multi-layer deposition layer includes a first mask layer and a second mask layer, and the step of forming the multi-layer deposition layer includes: forming the first mask layer on the surface of the semiconductor substrate, and performing plasma bombardment on the surface of the first mask layer to break the bubbles in the first mask layer; forming the second mask layer on the surface of the first mask layer after the plasma bombardment, and performing plasma bombardment on the surface of the second mask layer to break the bubbles in the second mask layer.

[0019] According to some embodiments of the present invention, the forming of the multiple deposition layers and the plasma bombardment of the deposition layers are performed in the same reaction chamber.

[0020] According to the method for processing semiconductor surface defects in an embodiment of the present invention, the surface of the deposited layer is plasma bombarded by a semiconductor plasma process to break the bubbles formed on the surface of the semiconductor device, so that the residual gas in the bubbles overflows, thereby eliminating the bubbles formed on the surface of the semiconductor device and making the surface of the deposited layer smooth. In this way, in the subsequent semiconductor preparation process, for example, when deposition and etching are performed on the surface of the semiconductor device, not only can the formation of protrusions be avoided, making the surface of the semiconductor device formed after deposition smoother, but also the problems of particle shielding and side etching after etching can be avoided, so as to improve the subsequent product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1-Figure 6 A process flow chart of each step of preparing a semiconductor device in the related art;

[0022] Figure 7-Figure 9 A cross-sectional view of the process flow of each step of a semiconductor surface defect treatment method and a semiconductor device manufacturing method according to an embodiment of the present invention;

[0023] Figure 10-11 Schematic diagram of the principle of the semiconductor surface treatment method according to an embodiment of the present invention;

[0024] Fig.12 A schematic diagram of a process for treating semiconductor surface defects according to an embodiment of the present invention

[0025] Fig.13 Schematic diagram of a process for preparing a semiconductor device according to an embodiment of the present invention.

[0026] Reference numerals:

[0027] 1: semiconductor substrate;

[0028] 11: Deposition layer, 12: Deposition layer containing boron-hydrogen bonds, 13: Bubbles. DETAILED DESCRIPTION

[0029] The following is a further detailed description of a method for processing semiconductor surface defects proposed by the present invention in conjunction with the accompanying drawings and specific embodiments.

[0030] like Figure 1-Figure 6As shown, in the preparation process of the semiconductor device of the related art, for example, in the hard mask layer process, especially at the end of the process, since the thin film layer 11' is formed at a fast rate and the gas formed in the process cannot be quickly discharged, gas will remain on the surface of the formed thin film layer 11', causing the gas to be wrapped under the thin film layer 11' and forming a protruding bubble 13' on the surface of the thin film layer. In this way, in the subsequent deposition of other thin film layers 15', other thin film layers 15' at the position of the bubble 13' form a protruding portion 12' protruding from the surface, which not only causes the surface of the formed semiconductor device to be uneven, but also when etching is performed subsequently, when the etching position is formed at the position of the bubble 13', due to the formation of a certain space in the bubble 13', the etching gas or the etching liquid enters the bubble 13', and due to the difference between the size of the bubble 13' and the etching position, the etching deviation occurs, for example Figure 6 As shown in the figure, side etching occurs, which affects the width of the etching groove and causes abnormal subsequent yield. Figure 6 As shown, due to the protrusion 12' located above the bubble, the top of the etched groove forms an upwardly inclined tip during etching, which is not level with the surface of the semiconductor device. During etching, particles 14' are easily formed and fall into the etched groove, resulting in particle obstruction in the etched groove and abnormal yield of the semiconductor device.

[0031] A method for processing semiconductor surface defects according to an embodiment of the present invention will be described below with reference to the accompanying drawings.

[0032] like Fig.12 As shown, the steps of the method for processing semiconductor surface defects according to an embodiment of the present invention include: placing a semiconductor device in a plasma processing device, the semiconductor device including a substrate 1 and a deposition layer 11 formed on the surface of the substrate 1, and the deposition layer 11 forms bubbles 13; plasma bombarding the surface of the deposition layer 11 to break the bubbles 13, so that the surface of the deposition layer 11 is smooth.

[0033] The method for treating semiconductor surface defects according to the embodiment of the present invention is used to treat surface defects of semiconductor devices with a surface deposited layer 11 in a semiconductor manufacturing process, especially semiconductor devices formed in a hard mask process. The semiconductor device is placed in a plasma device, and the surface of the semiconductor device can be plasma treated by the plasma device.

[0034] Specifically, Figure 7 and Figure 8As shown, the semiconductor device includes a substrate 1 and a deposition layer 11 formed on the surface of the substrate 1, and bubbles 13 are formed in the deposition layer 11; the material of the substrate 1 can be silicon (Si), germanium (Ge), silicon germanium (GeSi), or silicon carbide (SiC); it can also be silicon on insulator (SOI) or germanium on insulator (GOI); or it can also be other materials, such as III-V group compounds such as gallium arsenide.

[0035] In the preparation process of semiconductor devices, a deposition layer 11 is formed by deposition on the surface of a substrate 1, and a desired semiconductor device is formed by etching and other processes. As described in the background technology, in the process of forming the deposition layer 11, due to the inequality between the deposition reaction rate and the exhaust rate of the reaction generated gas, gas remains on the surface of the deposition layer 11, resulting in the formation of bubbles 13 protruding from the surface of the deposition layer 11.

[0036] The semiconductor device is placed in a plasma processing device, such as Figure 8 As shown, the surface of the deposition layer 11 is plasma bombarded by a semiconductor plasma process to break the bubbles 13 formed on the surface of the semiconductor device, so that the residual gas in the bubbles 13 overflows, thereby eliminating the bubbles 13 formed on the surface of the semiconductor device, and making the surface of the deposition layer 11 smooth. In this way, in the subsequent semiconductor preparation process, such as deposition and etching on the surface of the semiconductor device, not only can the formation of protrusions be avoided, making the surface of the semiconductor device formed after deposition smoother, but also the problems of particle shielding and side etching after etching can be avoided, so as to improve the subsequent product yield.

[0037] In some embodiments of the present invention, the deposited layer 11 may be formed as a silicon-containing compound layer containing silicon-hydrogen bonds, for example, the deposited layer 11 may be a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, or an amorphous silicon (a-Si) layer, etc. In the process of forming the deposited layer 11, a plasma enhanced chemical vapor deposition method may be used to form the deposited layer 11 on the surface of the semiconductor substrate 1, and a raw material gas is introduced into the process equipment, and a silicon-containing compound layer containing silicon-hydrogen bonds is formed on the surface of the substrate 1 after the raw material gas reacts. For example, the deposited layer 11 may be formed as a silicon nitride layer, and specifically, silane gas and ammonia gas may be used as raw materials during deposition to form a silicon nitride layer having silicon-hydrogen bonds.

[0038] Such as Fig. 9 As shown, when plasma bombarding the surface of the deposited layer 11, borane gas can be used for plasma bombardment, so that the silicon-hydrogen bonds are broken and boron-hydrogen bonds with stable bond energy are formed. That is, the surface of the silicon-containing compound layer containing silicon-hydrogen bonds is plasma bombarded by borane gas, such as Figure 10-11As shown, the boron ions in borane dissociate into plasma, bombard the surface of the deposited layer 11, promote the breaking and dissociation of the silicon-hydrogen bonds on the surface of the deposited layer 11, and replace the silicon in the silicon-hydrogen bonds to form boron-hydrogen bonds with short bond lengths and high strength. This not only allows the residual gas in the bubbles 13 on the surface of the deposited layer 11 to escape, making the surface of the deposited layer 11 smoother, but also allows the formation of a silicon compound layer 12 containing boron-hydrogen bonds on the surface of the deposited layer 11, thereby making the surface of the deposited layer 11 denser, improving the defects on the surface of the deposited layer 11, and improving the stability, and also improving the dielectric constant and optical properties of the deposited layer 11.

[0039] Optionally, when plasma bombarding is performed on the surface of the deposited layer 11, the flow rate of the borane gas is 2000-5000 sccm, the process temperature is 400-480°C, the process pressure is 2-5 Torr, and the RF power is 300-800 W. Thus, by adjusting the flow rate of the borane gas, the process pressure of the plasma, the process temperature, the RF power and time during the plasma bombardment process, the dielectric constant and optical properties of the surface of the deposited layer 11 formed can be further improved, so that the surface of the deposited layer 11 formed can be more stable.

[0040] Furthermore, in the step of forming the deposition layer 11 on the surface of the substrate 1, silane gas and ammonia gas can be used as raw material gases for forming the deposition layer 11, and the bubbles 13 contain residual generated gas after the deposition layer 11 is formed. After the bubbles 13 are broken, the following steps are also included: extracting the gas released after the bubbles 13 are broken.

[0041] Optionally, when plasma bombarding is performed on the surface of the deposited layer 11, an inert gas may be used as a carrier gas to avoid reaction with the deposited layer 11, and the flow rate of the inert gas is 1000-3000 sccm.

[0042] The following is a specific description by taking the deposition layer 11 formed in the hard mask layer process as a silicon nitride layer as an example.

[0043] In the process of forming the silicon nitride layer, silane gas and ammonia gas are used as raw material gases, wherein the ratio of silane gas to ammonia gas can be: SIH4 / NH3≈1.5, the process temperature is 400℃-480℃, the process pressure is 2-7 Tor, the RF frequency is set at 70-100W, and the process pressure is appropriately reduced to accelerate the extraction of residual gas.

[0044] At the end of the main deposition, borane gas is introduced as a subsequent processing gas, the flow rate of borane gas is 2000-5000sccm, the process temperature is 400-480°C, the process pressure is 2-5 Tor, and the RF power is 300-800 W. Under the action of an inert gas such as argon, the argon flow rate is 1000-3000sccm, and the boron ions are dissociated into plasma, bombarding the surface of the deposited layer 11 of the semiconductor device, so that the silicon-hydrogen bonds are bombarded and broken, and the boron ions combine with the broken hydrogen to form a more stable boron-hydrogen bond with a short bond length and high bond energy. The dissociated silicon is nitrided to form a large number of silicon-nitrogen bonds. The specific reaction is as follows:

[0045] Reaction equation:

[0046] SiH4+NH3+e - →Si-H+N-H+H2↑+e -

[0047] B2 H6+e - →B+H+e -

[0048] N-H+Si-H+B→SixNy+B-H+H2↑

[0049] This not only allows the residual gas in the bubbles 13 on the surface of the deposition layer 11 to escape, but also makes the surface of the deposition layer 11 more dense and smooth, thereby improving the performance of the surface of the deposition layer 11.

[0050] A method for manufacturing a semiconductor device according to an embodiment of the present invention will be described below with reference to the accompanying drawings.

[0051] like Fig.13 As shown, the preparation method of the semiconductor device according to the embodiment of the present invention may include: providing a semiconductor substrate 1; using plasma enhanced chemical vapor deposition to form a stacked multi-layer deposition layer 11 on the surface of the semiconductor, wherein the deposition layer 11 forms bubbles 13; when forming the multi-layer deposition layer 11, at least the deposition layer 11 located at the bottom layer is subjected to plasma bombardment to break the bubbles 13, and then other deposition layers are formed on the surface of the bottom layer 11; and patterning the multi-layer deposition layer 11.

[0052] Specifically, the semiconductor substrate 1 material can be silicon (Si), germanium (Ge), silicon germanium (GeSi), or silicon carbide (SiC); it can also be silicon on insulator (SOI), germanium on insulator (GOI); or it can also be other materials, such as III-V group compounds such as gallium arsenide.

[0053] A multi-layer deposition layer 11 is stacked on the semiconductor surface by using plasma enhanced chemical vapor deposition. For example, in the process of forming a hard mask layer by using plasma enhanced chemical vapor deposition, bubbles 13 are formed on the surface of the deposition layer 11.

[0054] The deposition layer 11 may be formed as a single layer or multiple layers. For example, when multiple deposition layers 11 are formed on the surface of the semiconductor substrate 1, the multiple deposition layers 11 are stacked and the materials of the multiple deposition layers 11 are different. In order to avoid forming a large protrusion on the surface of the finally formed semiconductor device and make the surface of the semiconductor device smoother, at least the bottommost deposition layer 11 may be plasma bombarded, that is, the deposition layer 11 located on the surface of the semiconductor substrate 1 and in contact with the surface of the semiconductor substrate 1 is plasma bombarded to break the bubbles formed on its surface, so that the surface of the bottommost deposition layer 11 is more dense and smooth. Then, other deposition layers are deposited on the surface of the bottommost deposition layer 11. The other deposition layers are formed above the lowest deposition layer 11 and are formed of a material different from that of the lowest deposition layer 11. For example, the lowest deposition layer 11 may be a silicon nitride layer, and the other deposition layers located on the nitride layer may be an amorphous carbon layer, a silicon oxide layer, etc. This not only makes the surface of the semiconductor device smoother, but also, because the bottom deposition layer 11 is formed on the surface of the semiconductor substrate 1 , it can also avoid the problem of side etching during etching due to bubbles 13 formed in the bottom deposition layer 11 .

[0055] Of course, it is understandable that in order to further improve the flatness and density of the surface of the semiconductor device, plasma bombardment can be used to remove the bubbles 13 formed on the surface of each deposition layer 11 after each deposition layer 11 is formed, and the number of plasma bombardments can be equal to or less than the number of layers of the multiple deposition layers 11.

[0056] Finally, the multilayer deposition layer 11 is patterned. Thus, in the process of patterning the deposition layer 11, the surface of the formed semiconductor device is smoother, thereby avoiding the falling of particles in the etching grooves due to the protrusions on the surface during the patterning process, and also avoiding the problem of abnormal width of the etching grooves due to side etching when etching the grooves, thereby improving the product yield.

[0057] Optionally, forming a multi-layer deposition layer 11 and plasma bombarding the deposition layer 11 are performed in the same reaction chamber. This can simplify the process of preparing semiconductor devices and reduce pollution to semiconductor devices. For example, when forming a multi-layer deposition layer 11, the semiconductor substrate 1 is placed in a plasma device and formed by plasma enhanced chemical vapor deposition. After the main deposition of the bottom deposition layer 11 is completed, a plasma bombardment gas is introduced, its flow rate is controlled, and the process temperature, process pressure, and radio frequency parameters of the plasma are adjusted to perform plasma bombardment on the formed deposition layer 11, so that there is no need to take out the semiconductor device and place it in other equipment, thereby reducing pollution.

[0058] In some specific examples of the present invention, the deposited layer 11 is formed as a mask layer. For example, the deposited layer 11 can be a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer or an amorphous silicon (a-Si) layer. In the process of forming the mask layer, due to the subsequent etching process, the surface of the mask layer needs to be smoother to improve the mask forming effect of the mask layer and the subsequent etching effect.

[0059] Specifically, the multilayer deposition layer 11 may include a first mask layer and a second mask layer, and the step of forming the multilayer deposition layer 11 includes: forming the first mask layer on the surface of the semiconductor substrate 1, performing plasma bombardment on the surface of the first mask layer to break the bubbles 13 of the first mask layer; forming the second mask layer on the surface of the first mask layer after the plasma bombardment, and performing plasma bombardment on the surface of the second mask layer to break the bubbles 13 of the second mask layer. In this way, by performing plasma bombardment on the first mask layer and the second mask layer respectively, the surface of the semiconductor device with the mask layer can be made more dense and flat, which is beneficial to improving the optical performance of the surface of the semiconductor device and the subsequent etching effect.

[0060] Optionally, the bottommost deposition layer 11 may be formed as a silicon compound layer containing silicon-hydrogen bonds. When plasma bombarding the bottommost deposition layer 11, borane gas is used for plasma bombardment, and the silicon-hydrogen bonds are broken to form boron-hydrogen bonds with stable bond energy. Specifically, the silicon compound layer containing silicon-hydrogen bonds is plasma bombarded by borane gas, and the boron ions in borane are dissociated into plasma, bombarding the surface of the deposition layer 11, promoting the breaking and dissociation of silicon-hydrogen bonds on the surface of the deposition layer 11, and replacing silicon in silicon-hydrogen bonds to form boron-hydrogen bonds with short bond length and high bond energy, which not only makes the surface of the deposition layer 11 more dense and smooth, but also because boron-hydrogen bonds that are more stable than silicon-hydrogen bonds are formed, the surface performance of the deposition layer 11 can be improved.

[0061] Optionally, after plasma bombardment of the bottommost deposition layer 11, a silicon compound layer containing boron-hydrogen bonds is formed on the surface of the bottommost deposition layer 11, and in the step of forming other deposition layers on the surface of the bottommost deposition layer 11, the other deposition layers are formed on the surface of the silicon compound layer containing boron-hydrogen bonds, thereby making the other deposition layers formed on the surface of the silicon compound layer containing boron-hydrogen bonds smoother, thereby further improving the performance of the semiconductor device.

[0062] The method for preparing a semiconductor device according to an embodiment of the present invention is described in detail below by taking the deposition layer 11 formed in the hard mask layer process as a silicon nitride layer as an example.

[0063] A bottommost deposition layer 11, i.e., a silicon nitride layer, is formed on the surface of a semiconductor substrate 1 by plasma enhanced chemical vapor deposition. Specifically, silane gas and ammonia gas can be used as raw material gases. The ratio of silane gas to ammonia gas can be: SIH4 / NH3≈1.5. The process temperature is 400°C-480°C, the process pressure is 2-7 Tor, and the RF frequency is set at 70-100W. The process pressure is appropriately reduced to accelerate the extraction of residual gas.

[0064] At the end of the main deposition, borane gas is introduced as a subsequent processing gas, the flow rate of borane gas is 2000-5000sccm, the process temperature is 400-480°C, the process pressure is 2-5 Tor, and the RF power is 300-800W. Under the action of an inert gas such as argon gas, the argon gas flow rate is 1000-3000sccm, the boron ions are dissociated into plasma, bombarding the surface of the deposition layer 11 of the semiconductor device, so that the silicon hydrogen bond is bombarded and broken, the boron ions combine with the broken hydrogen to form a more stable boron hydrogen bond with a short bond length and high bond energy, the dissociated silicon is nitrided to form a large number of silicon nitrogen bonds, thereby forming a more dense silicon nitride layer 12 containing boron hydrogen bonds on the surface of the deposition layer 11, which not only allows the residual gas in the bubbles 13 on the surface of the deposition layer 11 to escape, but also makes the surface of the deposition layer 11 more dense and smooth, thereby improving the performance of the surface of the deposition layer 11.

[0065] Then, other deposited layers 11 are subsequently formed on the surface of the boron-hydrogen bonded silicon nitride layer 12, and the multi-layer deposited layers 11 and the boron-hydrogen bonded silicon nitride layer 12 are patterned to form etched grooves in the multi-layer deposited layers 11 and the semiconductor substrate 1, thereby avoiding the problem of side etching and particle blocking of the etched grooves by subsequent etching.

[0066] The above is only a preferred embodiment of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for treating semiconductor surface defects, characterized in that: include: Placing a semiconductor device in a plasma processing device, the semiconductor device comprising a substrate and a deposition layer formed on a surface of the substrate, wherein bubbles are formed on the deposition layer; Plasma bombardment is performed on the surface of the deposited layer to break the bubbles, so that the surface of the deposited layer is smooth; The deposited layer is formed into a silicon-containing compound layer containing silicon-hydrogen bonds, and when plasma bombardment is performed on the surface of the deposited layer, borane gas is used for plasma bombardment, so that the silicon-hydrogen bonds are broken and boron-hydrogen bonds with stable bond energy are formed; After plasma bombardment is performed on the surface of the deposited layer, a silicon nitride layer containing boron-hydrogen bonds and covering the deposited layer is formed on the surface of the deposited layer.

2. The method for treating semiconductor surface defects according to claim 1, characterized in that: The flow rate of the borane gas is 2000-5000 sccm, the process temperature is 400-480° C., and the process pressure is 2-5 Torr.

3. The method for treating semiconductor surface defects according to claim 1, characterized in that: The RF power is 300~800W.

4. The method for treating semiconductor surface defects according to claim 1, characterized in that: In the step of forming a deposition layer on the surface of the substrate, silane gas and ammonia gas are used as raw material gases for forming the deposition layer, and the bubbles contain residual generated gas after forming the deposition layer. After the bubbles are broken, the following step is also included: extracting the gas released after the bubbles are broken.

5. The method for treating semiconductor surface defects according to claim 1, characterized in that: The deposited layer is a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer or an amorphous silicon (a-Si) layer.

6. The method for treating semiconductor surface defects according to claim 1, characterized in that: When plasma bombardment is performed on the surface of the deposited layer, an inert gas is used as a carrier gas.

7. The method for treating semiconductor surface defects according to claim 6, characterized in that: The flow rate of the inert gas is 1000-3000 sccm.

8. A method for preparing a semiconductor device, characterized in that: include: providing a semiconductor substrate; A plasma enhanced chemical vapor deposition method is used to form a stacked multi-layer deposition layer on the surface of the semiconductor, wherein the deposition layer has bubbles; When forming multiple deposition layers, at least the deposition layer at the bottom is subjected to plasma bombardment to break the bubbles, and then other deposition layers are formed on the surface of the deposition layer at the bottom; patterning the multiple deposited layers; The bottommost deposited layer is formed as a silicon compound layer containing silicon-hydrogen bonds, and when the bottommost deposited layer is subjected to plasma bombardment, borane gas is used for plasma bombardment, so that the silicon-hydrogen bonds are broken to form boron-hydrogen bonds with stable bond energy; After the bottommost deposited layer is subjected to plasma bombardment, a silicon compound layer containing boron-hydrogen bonds is formed on the surface of the bottommost deposited layer. In the step of forming other deposited layers on the surface of the bottommost deposited layer, the other deposited layers are formed on the surface of the silicon compound layer containing boron-hydrogen bonds.

9. The method for preparing a semiconductor device according to claim 8, characterized in that: The deposition layer is formed as a mask layer.

10. The method for preparing a semiconductor device according to claim 9, characterized in that: The multi-layer deposition layer includes a first mask layer and a second mask layer. The steps of forming the multi-layer deposition layer include: forming the first mask layer on the surface of the semiconductor substrate, and performing plasma bombardment on the surface of the first mask layer to break the bubbles in the first mask layer; forming the second mask layer on the surface of the first mask layer after the plasma bombardment, and performing plasma bombardment on the surface of the second mask layer to break the bubbles in the second mask layer.

11. The method for preparing a semiconductor device according to claim 8, characterized in that: The forming of the multi-layer deposition layer and the plasma bombardment of the deposition layer are performed in the same reaction chamber.

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