Component for semiconductor manufacturing equipment and method for manufacturing the same

Abstract

The present invention provides a component for semiconductor manufacturing equipment and a method for manufacturing the same, which can prevent the exhaust hole from being clogged by the adhesive material supporting the plug. The component for semiconductor manufacturing equipment comprises: a ceramic plate; a plug insertion hole provided on the surface of the ceramic plate opposite to the wafer loading surface; an exhaust hole penetrating the bottom wall of the plug insertion hole in the ceramic plate in the thickness direction; a plug inserted into the plug insertion hole; and a gas flow path provided inside the plug. A step is provided on the side of the plug, and in an area deeper than the step, the plug insertion hole abuts against the plug, and in an area shallower than the step, a gap is formed between the plug insertion hole and the plug, and a plug support component made of adhesive material is formed in the gap.

Description

Technical Field

[0001] The present invention relates to a component for semiconductor manufacturing equipment and a method for manufacturing the same. Background Art

[0002] In the past, as a component for semiconductor manufacturing equipment, there is a known component having an electrostatic chuck with a wafer loading surface on the upper surface. For example, the component for semiconductor manufacturing equipment of patent document 1 is provided with a cooling plate on the lower surface of the electrostatic chuck via an intermediate plate. The cooling plate has an air supply hole. The electrostatic chuck has an exhaust hole that passes from the lower surface to the wafer loading surface. In the intermediate plate, a blank space connected to the air supply hole and the exhaust hole is formed together with the cooling plate, and a dense substance plug is arranged in the blank space. The dense substance plug has a gas flow path that is curved and passes through the upper surface side and the lower surface side. The component for semiconductor manufacturing equipment places a wafer on the wafer loading surface in a chamber, introduces a raw material gas into the chamber, and applies an RF voltage for generating plasma to the cooling plate, thereby generating plasma to process the wafer. At this time, a back side gas such as helium is introduced into the air supply hole. The back side gas is supplied to the back side of the wafer from the air supply hole through the gas flow path of the dense substance plug and through the exhaust hole.

[0003] [Prior art literature]

[0004] [Patent Document]

[0005] [Patent Document 1] U.S. Patent Application Publication No. 2017 / 0243726 Summary of the invention

[0006] Problems to be solved by the invention

[0007] However, in Patent Document 1, since the dense plug is only arranged in the blank, a gap may be generated between the dense plug and the inner surface of the blank. Such a gap may also be one of the causes of insulation breakdown, so it is not preferable. In addition, if the dense plug is bonded to the blank with a resin adhesive to suppress the generation of the gap, the adhesive may flow into the vent hole and block the vent hole.

[0008] The present invention is made to solve such a problem, and its main purpose is to prevent the exhaust hole from being blocked by the adhesive material of the support pin.

[0009] Solutions for solving problems

[0010] The semiconductor manufacturing device member of the present invention comprises:

[0011] A ceramic plate having a wafer mounting surface and having electrodes built therein;

[0012] a pin insertion hole provided on a surface of the ceramic plate opposite to the wafer mounting surface;

[0013] an exhaust hole penetrating through the bottom wall of the plug insertion hole in the ceramic plate in the thickness direction;

[0014] a latch pin inserted into the latch pin insertion hole; and

[0015] a gas flow path disposed inside the plug and communicating with the exhaust hole to allow gas to flow in a thickness direction of the plug;

[0016] A step is provided on the side surface of the latch or the inner surface of the latch insertion hole. The latch insertion hole abuts against the latch in a region deeper than the step. A gap is formed between the latch insertion hole and the latch in a region shallower than the step. A latch support member made of an adhesive material is formed in the gap.

[0017] In the semiconductor manufacturing device component, the plug insertion hole abuts against the plug in a region deeper than the step provided on the side surface of the plug or the inner surface of the plug insertion hole, and a gap is formed between the plug insertion hole and the plug in a region shallower than the step, and a plug support member made of an adhesive material is formed in the gap. When manufacturing the semiconductor manufacturing device component, even if an adhesive is injected into the gap between the plug and the plug insertion hole, it is possible to prevent the adhesive from flowing into a position further inside than the step, and further prevent the adhesive from entering the vent hole. Therefore, the vent hole is not blocked by the adhesive material supporting the plug, that is, the plug support member.

[0018] In the semiconductor manufacturing device component of the present invention, the latch pin may have a first tapered portion whose diameter gradually narrows toward the opening of the latch pin insertion hole. In this way, the latch pin support member has the shape of the first tapered portion supporting the latch pin from below, thereby preventing the latch pin from falling out of the latch pin insertion hole.

[0019] In the semiconductor manufacturing device component of the present invention, the plug may have a second tapered portion whose diameter gradually narrows toward the bottom surface of the plug insertion hole, the outer surface of the second tapered portion abuts against the inner surface of the plug insertion hole, and the electrode has a through hole, which is provided on the surface intersecting with the second tapered portion in the interior of the ceramic plate, for passing the plug. In this way, since the plug has the second tapered portion, the diameter of the through hole can be reduced compared to a case where the plug does not have the second tapered portion.

[0020] In the semiconductor manufacturing device member of the present invention, the plug may be made of dense ceramics, and the gas flow path may be formed in a spiral shape, thereby preventing plasma from being discharged through the gas flow path.

[0021] The method for manufacturing a semiconductor manufacturing device component of the present invention is a method for manufacturing any of the above-mentioned semiconductor manufacturing device components, comprising:

[0022] (a) a process of preparing the ceramic plate and the latch;

[0023] (b) a step of inserting the latch pin into the latch pin insertion hole so that the latch pin abuts against the latch pin in a region deeper than a step provided on a side surface of the latch pin or an inner surface of the latch pin insertion hole, and a gap is formed between the latch pin insertion hole and the latch pin in a region shallower than the step; and

[0024] (c) A step of injecting an adhesive into the gap and then curing the adhesive to form the latch support member.

[0025] According to the method for manufacturing the member for semiconductor manufacturing equipment, when the gap is filled with adhesive, the adhesive does not flow into the position further inside the step. Therefore, the adhesive does not enter the vent hole. As a result, the vent hole is not blocked by the adhesive material supporting the latch, that is, the latch support member. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a longitudinal sectional view of the member 10 for semiconductor manufacturing equipment.

[0027] Figure 2 is a top view of the ceramic plate 20 .

[0028] Figure 3 yes Figure 1 A partial enlarged view of .

[0029] Figure 4 It is a perspective view of the latch 40 .

[0030] Figure 5 It is an explanatory diagram of the process of installing the plug 40 in the plug insertion hole 30.

[0031] Figure 6 It is an explanatory diagram of the process of installing the plug 40 in the plug insertion hole 30.

[0032] Figure 7 It is an explanatory diagram of the process of installing the plug 40 in the plug insertion hole 30.

[0033] Figure 8 It is a partially enlarged view of a longitudinal section of a member 110 for a semiconductor manufacturing apparatus.

[0034] Fig. 9 It is a partially enlarged view of a longitudinal section of a member 210 for a semiconductor manufacturing apparatus.

[0035] [Explanation of symbols]

[0036] 10, 110, 210: component for semiconductor manufacturing apparatus, 20: ceramic plate, 20a: wafer mounting surface, 21a: sealing tape, 21b: circular protrusion, 22: electrode, 22a: through hole, 28: exhaust hole, 30: latch insertion hole, 30a: opening, 31: bottom surface, 32: side surface, 33: inclined surface, 34: step, 40: latch, 41: first tapered portion, 42: second tapered portion, 44: step, 46: gas flow path, 48: circular recess, 50: latch support member, 60: cooling plate, 62: refrigerant flow path, 64: gas supply path, 64a: gas collecting portion, 64b: gas inlet portion, 64c: gas distribution portion, 70: bonding sheet, 72: hole, 80: adhesive, 82: distributor, G: gap, W: wafer. DETAILED DESCRIPTION

[0037] Next, preferred embodiments of the present invention will be described using the drawings. Figure 1 is a longitudinal sectional view of a semiconductor manufacturing device component 10, Figure 2 is a top view of the ceramic plate 20, Figure 3 yes Figure 1 A partial enlarged view of Figure 4 It is a perspective view of the latch 40 .

[0038] The semiconductor manufacturing apparatus member 10 includes a ceramic plate 20 , a plug insertion hole 30 , an exhaust hole 28 , a plug 40 , a gas flow path 46 , and a cooling plate 60 .

[0039] The ceramic plate 20 is a circular plate made of ceramic such as alumina sintered body or aluminum nitride sintered body (for example, 300 mm in diameter and 5 mm in thickness). One surface of the ceramic plate 20 serves as a wafer mounting surface 20a. The ceramic plate 20 has an electrode 22 built in. Figure 2 As shown, a sealing band 21a is formed along the outer edge of the chip loading surface 20a of the ceramic plate 20, and a plurality of circular protrusions 21b are formed on the entire surface. The sealing band 21a and the circular protrusions 21b are of the same height, and the height is, for example, several μm to several tens of μm. The electrode 22 is a planar mesh electrode used as an electrostatic electrode, and a DC voltage can be applied. When a DC voltage is applied to the electrode 22, the chip W is adsorbed and fixed on the chip loading surface 20a by an electrostatic adsorption force, and when the application of the DC voltage is released, the adsorption and fixation of the chip W to the chip loading surface 20a is released. The electrode 22 is also used as an RF electrode. Specifically, an upper electrode (not shown) is arranged above the chip loading surface 20a, and when high-frequency power is applied between the parallel plate electrodes composed of the plate electrode and the electrode 22 built into the ceramic plate 20, plasma is generated. A through hole 22a (see FIG. 2A ) for inserting the plug 40 is provided in the electrode 22. Figure 3), a predetermined insulation distance is ensured between the through hole 22a of the electrode 22 and the plug 40.

[0040] The plug insertion holes 30 are bottomed cylindrical holes provided at a plurality of locations (e.g., 12 locations or 24 locations provided at equal intervals along the circumferential direction) on the surface 20b of the ceramic plate 20 opposite to the wafer mounting surface 20a. The plug insertion holes 30 are generally cylindrical (e.g., opening diameter 8 mm, total length 4 mm), but Figure 3 As shown, the boundary between the bottom surface 31 and the side surface 32 forms an inclined surface 33 .

[0041] The exhaust hole 28 is a small-diameter hole (for example, 0.1 mm in diameter) provided to penetrate a portion of the ceramic plate 20 corresponding to the bottom wall of the plug insertion hole 30 in the thickness direction. A plurality of exhaust holes 28 are provided for one plug insertion hole 30 .

[0042] The plug 40 is a member made of dense ceramic (for example, a maximum outer diameter of 8 mm and a total length of 4 mm), and is inserted into the plug insertion hole 30. The plug 40 is preferably formed of the same ceramic as the ceramic plate 20. A step 44 is provided on the side of the plug 40 along the circumferential direction of the plug 40. In the plug insertion hole 30, the plug insertion hole 30 abuts against the plug 40 in an area deeper than the step 44 of the plug 40 and before reaching the circular recess 48 provided at a position opposite to the exhaust hole 28. In an area shallower than the step 44 in the plug insertion hole 30, a gap G is formed between the plug insertion hole 30 and the plug 40. A plug support member 50 made of an adhesive material is formed in the gap G. As the adhesive material, for example, silicone resin, epoxy resin, acrylic resin, etc. can be cited, preferably silicone resin. The plug 40 has a first tapered portion 41 whose diameter gradually narrows toward the opening 30a of the plug insertion hole 30. Therefore, the gap G between the first tapered portion 41 and the plug insertion hole 30 gradually widens toward the opening 30a of the plug insertion hole 30. The plug support member 50 is shaped to support the first tapered portion 41 of the plug 40 from below. The plug 40 has a second tapered portion 42 whose diameter gradually narrows toward the bottom surface 31 of the plug insertion hole 30. The second tapered portion 42 abuts against the inclined surface 33 of the plug insertion hole 30. The plug 40 has a gas flow path 46 inside.

[0043] The gas flow path 46 is connected to the exhaust holes 28, allowing the gas to flow in the thickness direction of the plug 40. In the present embodiment, the gas flow path 46 is formed in a spiral shape that penetrates the plug 40 in the thickness direction. A circular recess 48 is provided on the surface of the plug 40 that faces the bottom surface 31 of the plug insertion hole 30. The circular recess 48 serves to connect the gas flow path 46 with the plurality of exhaust holes 28.

[0044] The latch 40 can be manufactured, for example, by firing a molded body formed using a 3D printer, or by firing a molded body formed by die casting. Details of die casting are disclosed, for example, in Japanese Patent Gazette No. 5458050. In die casting, a ceramic slurry containing ceramic powder, solvent, dispersant and gelling agent is injected into the molding space of the molding mold, and the gelling agent is chemically reacted to gel the ceramic slurry, thereby forming a molded body in the molding mold. In die casting, an outer mold formed of a material with a low melting point such as wax and a core (a mold of the same shape as the gas flow path 46) can also be used as a molding mold to form a molded body in the molding mold, and then the molding mold is heated to a temperature above the melting point of the molding mold to melt or disappear, thereby manufacturing a molded body.

[0045] The cooling plate 60 is a circular plate made of metal such as aluminum or aluminum alloy (a circular plate having a diameter equal to or larger than that of the ceramic plate 20). A refrigerant flow path 62 for circulating the refrigerant and a gas supply path 64 for supplying back gas to the plug 40 are formed inside the cooling plate 60. The gas supply path 64 includes: a ring-shaped gas collection portion 64a which is concentric with the cooling plate 60 when viewed from above, a gas introduction portion 64b which introduces gas from the back of the cooling plate 60 to the gas collection portion 64a, and a gas distribution portion 64c which distributes gas from the gas collection portion 64a to each plug 40. The cooling plate 60 and the ceramic plate 20 are bonded via a resin bonding sheet 70. On the bonding sheet 70, a hole 72 having a diameter equal to or larger than that of the opening of the plug insertion hole 30 is provided at a position opposite to the plug insertion hole 30. It should be noted that the cooling plate 60 and the ceramic plate 20 can also be bonded via brazing material instead of the bonding sheet 70.

[0046] Next, an example of using the semiconductor manufacturing device member 10 thus constructed is described. First, in a state where the semiconductor manufacturing device member 10 is set in a chamber (not shown), a wafer W is placed on the wafer placement surface. Then, the chamber is depressurized by a vacuum pump to adjust to a predetermined vacuum degree, and a DC voltage is applied to the electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, so that the wafer W is adsorbed and fixed to the wafer placement surface. Next, a reaction gas atmosphere of a predetermined pressure (for example, tens to hundreds of Pa) is set in the chamber. In this state, a high-frequency voltage is applied between an upper electrode (not shown) set at the top part of the chamber and the electrode 22 of the semiconductor manufacturing device member 10 to generate plasma. In addition, instead of applying a high-frequency voltage between the upper electrode and the electrode 22, a high-frequency voltage may be applied between the upper electrode and the cooling plate 60. The surface of the wafer W is etched by the generated plasma. If a gas flow path that passes through linearly in the thickness direction is provided inside the plug 40, the generated plasma may sometimes cause discharge between the wafer W and the cooling plate 60 via the gas flow path. However, in this embodiment, since the gas flow path 46 of the plug 40 is spiral, such discharge can be prevented. Refrigerant is circulated in the refrigerant flow path 62 of the cooling plate 60. A back side gas such as helium is introduced into the gas supply path 64 from a gas storage tank (not shown). The back side gas is discharged to the space between the back side of the wafer W and the portion of the wafer mounting surface 20a where the sealing tape 21a and the circular protrusion 21b are not provided through the gas supply path 64, the gas flow path 46 and the exhaust hole 28 and sealed. Due to the presence of the back side gas, heat conduction between the wafer W and the ceramic plate 20 can be efficiently performed.

[0047] Next, a manufacturing example of the semiconductor manufacturing apparatus member 10 will be described. Figure 5 to Figure 7 It is an explanatory diagram of a step of attaching the plug 40 to the plug insertion hole 30 of the ceramic plate 20 in the manufacturing process of the semiconductor manufacturing apparatus member 10 .

[0048] First, the ceramic plate 20 and the plug 40 are prepared (step (a)). The ceramic plate 20 and the plug 40 are as described above.

[0049] Next, the plug 40 is inserted into the plug insertion hole 30 of the ceramic plate 20 (step (b), see Figure 5 Specifically, the ceramic plate 20 is arranged so that the opening 30a of the plug insertion hole 30 faces upward. Then, the plug 40 is grasped with the circular recess 48 facing downward and inserted into the plug insertion hole 30. Figure 6As shown, in the plug insertion hole 30, the plug insertion hole 30 abuts against the plug pin 40 in a region deeper than the step 44 of the plug pin 40 and before reaching the exhaust hole 28 (before the circular recess 48). At this time, the surface of the plug pin 40 provided with the circular recess 48 is located at the bottom surface 31 of the plug insertion hole 30, and the second tapered portion 42 abuts against the inclined surface 33. In addition, in a region of the plug insertion hole 30 shallower than the step 44 of the plug pin 40, a gap G is formed between the plug insertion hole 30 and the plug pin 40.

[0050] Next, the adhesive 80 is injected into the gap G using the dispenser 82, and then the adhesive is cured (step (c), see Figure 6 as well as Figure 7 ). As the adhesive 80, silicone, epoxy, acrylic, etc. can be cited, and silicone is preferred. The adhesive 80 is stuck by the step 44. Therefore, by injecting the adhesive 80 into the opening 30a of the pin insertion hole 30, a fixed amount of adhesive 80 can be injected. In addition, it is possible to prevent the adhesive 80 from crossing the step 44 and reaching the exhaust hole 28 and the circular recess 48. In addition, the gap G is wider as it is closer to the opening 30a of the pin insertion hole 30, so it is easy to inject the adhesive 80. When the adhesive 80 is cured, it will become the pin support member 50. Thereafter, the surface 20b on the opposite side of the chip mounting surface 20a in the ceramic plate 20 and the surface of the gas distribution portion 64c opening in the cooling plate 60 are bonded via the bonding sheet 70. Thus, a component 10 for a semiconductor manufacturing device is obtained.

[0051] In addition, when the side surface of the plug 40 does not have a step, a method of applying the adhesive 80 to the side surface of the plug 40 and then inserting the plug into the plug insertion hole 30 is considered, but in this case, the adhesive 80 may come into contact with the side surface of the plug insertion hole 30 during insertion and be peeled off. In contrast, in the case of the method of injecting the adhesive 80 into the gap G as described above, the adhesive 80 will not be peeled off, so the adhesive layer can be reliably provided. Therefore, no gap is generated around the plug 40, and the durability of the adhesive layer is improved.

[0052] In the semiconductor manufacturing apparatus component 10 described in detail above, the plug insertion hole 30 abuts against the plug pin 40 in a region deeper than the step 44 provided on the side of the plug pin 40, and a gap G is formed between the plug insertion hole 30 and the plug pin 40 in a region shallower than the step 44, and a plug support member 50 made of an adhesive material is formed in the gap G. When manufacturing the semiconductor manufacturing apparatus component 10, even if the adhesive 80 is injected into the gap G between the plug insertion hole 30 and the plug pin 40, it is possible to suppress the adhesive 80 from flowing into a position further inside than the step 44, and further suppress the adhesive 80 from entering the exhaust hole 28. Therefore, the exhaust hole 28 is not blocked by the plug support member 50, which is the adhesive material supporting the plug pin 40.

[0053] By providing the step 44, the gap G is formed continuously around the plug 40, so that the plug 40 can be reliably bonded by the adhesive 80, and the intrusion of plasma can be suppressed. In addition, by providing the step 44, the influence of plasma on the plug support member 50 as an adhesive layer can be reduced.

[0054] Furthermore, the latch pin 40 has the first tapered portion 41. Therefore, the latch pin support member 50 has a shape that supports the first tapered portion 41 of the latch pin 40 from below, and can prevent the latch pin 40 from falling out of the latch pin insertion hole 30.

[0055] Furthermore, the plug 40 has a second tapered portion 42, the outer surface of which abuts against the inclined surface 33 of the plug insertion hole 30, and the electrode 22 is provided on a surface intersecting with the second tapered portion 42 in the interior of the ceramic plate 20, and has a through hole 22a for passing the plug 40. In this way, since the plug 40 has the second tapered portion 42, it is different from the case where it does not have the second tapered portion 42 (see the following description). Figure 8 ) can reduce the diameter D1 of the through hole 22a (refer to Figure 3 ) In addition, compared with the case where the plug 40 is made thinner along the entire length of the through hole 22a, the spiral gas flow path 46 provided inside the plug 40 can be made longer.

[0056] Furthermore, since the plug 40 is made of dense ceramic and the gas flow path 46 is formed in a spiral shape, it is possible to prevent plasma from being discharged through the gas flow path 46 .

[0057] The present invention is not limited to the above-described embodiment, and it goes without saying that the present invention can be implemented in various forms as long as it falls within the technical scope of the present invention.

[0058] For example, in the above-mentioned embodiment, a porous plug having the same appearance shape as the plug 40 may be used instead of the plug 40 made of dense ceramic. The porous plug has fine pores inside, so that the back gas is allowed to flow in the thickness direction. Therefore, it is not necessary to provide a spiral gas flow path 46 inside the porous plug. When such a porous plug is used, it is preferable to coat the outer surface with dense ceramic. In this way, it is possible to prevent the adhesive from penetrating into the inside of the porous plug.

[0059] In the above-mentioned embodiment, a resistance heating element may be buried inside the ceramic plate 20. In this way, the temperature of the wafer W can be controlled with higher accuracy.

[0060] In the above-mentioned embodiment, the gas flow path 46 inside the plug 40 is set to a spiral shape, but it is not particularly limited to this. For example, the gas flow path can also be set to a shape with many folded parts (such as a sawtooth shape). Even so, it is possible to effectively prevent discharge from occurring through the gas flow path.

[0061] In the above-described embodiment, the first tapered portion 41 may not be provided on the latch 40. In this case, the gap G and the latch support member 50 have a uniform width (thickness).

[0062] In the above-mentioned embodiment, the second tapered portion 42 is provided on the plug pin 40, and the inclined surface 33 is provided on the plug pin insertion hole 30. However, Figure 8 As shown in the semiconductor manufacturing device member 110, the second tapered portion 42 and the inclined surface 33 are not provided. Figure 8 In this case, the through hole 22a of the electrode 22 and the plug 40 need to be separated by a predetermined insulation distance, so the diameter D2 of the through hole 22a of the electrode 22 becomes larger than the diameter D1 of the above embodiment.

[0063] In the above-mentioned embodiment, a step 44 is provided on the side of the latch 40, but it may also be provided as follows. Fig. 9 As shown in the semiconductor manufacturing device member 210, instead of providing the step 44 on the side of the plug 40, the step 34 is provided on the side 32 of the plug insertion hole 30. Fig. 9 In the embodiment, the same reference numerals are given to the same components as those in the above-mentioned embodiment. In the semiconductor manufacturing apparatus component 210, the plug insertion hole 30 abuts against the plug pin 40 in a region of the plug insertion hole 30 that is deeper than the step 34 and before reaching the exhaust hole 28. In addition, in a region of the plug insertion hole 30 that is shallower than the step 34, a gap G is formed between the plug insertion hole 30 and the plug pin 40, and a plug support member 50 is formed in the gap G. When manufacturing the semiconductor manufacturing apparatus component 210, even if an adhesive is injected into the gap G between the plug insertion hole 30 and the plug pin 40, it is possible to prevent the adhesive from flowing into a position further inside than the step 34, and further prevent the adhesive from entering the exhaust hole 28. Therefore, the exhaust hole 28 is not blocked by the adhesive material supporting the plug pin 40, that is, the plug support member 50.

Claims

1. A component for a semiconductor manufacturing device, comprising: A ceramic plate having a wafer mounting surface and having electrodes built therein; a pin insertion hole provided on a surface of the ceramic plate opposite to the wafer mounting surface; an exhaust hole that penetrates the bottom wall of the plug insertion hole in the ceramic plate in the thickness direction; a latch pin inserted into the latch pin insertion hole; and a gas flow path disposed inside the plug and communicating with the exhaust hole to allow gas to flow in a thickness direction of the plug; A step is provided on the side surface of the plug or the inner surface of the plug insertion hole, the plug insertion hole abuts against the plug in a region deeper than the step, a gap is formed between the plug insertion hole and the plug in a region shallower than the step, and a plug support member made of an adhesive material is formed in the gap, The plug pin has a first tapered portion at a portion thereof close to the plug pin insertion hole, the diameter of which gradually narrows toward the opening of the plug pin insertion hole. The latch support member has a shape that supports the first tapered portion of the latch from below.

2. The semiconductor manufacturing device member according to claim 1, wherein the plug has a second tapered portion whose diameter gradually narrows toward the bottom surface of the plug insertion hole, The outer surface of the second tapered portion abuts against the inner surface of the pin insertion hole. The electrode has a through hole provided in a surface intersecting the second tapered portion in the interior of the ceramic plate, and for allowing the plug to pass therethrough.

3. The semiconductor manufacturing device component according to claim 1 or 2, wherein the latch is made of dense ceramic. The gas flow path is formed in a spiral shape.

4. A method for manufacturing a semiconductor manufacturing device component, which is a method for manufacturing a semiconductor manufacturing device component according to any one of claims 1 to 3, comprising: (a) a process of preparing the ceramic plate and the latch; (b) a step of inserting the latch pin into the latch pin insertion hole so that the latch pin abuts against the latch pin in a region deeper than a step provided on a side surface of the latch pin or an inner surface of the latch pin insertion hole, and a gap is formed between the latch pin insertion hole and the latch pin in a region shallower than the step; and (c) A step of injecting an adhesive into the gap and then curing the adhesive to form the latch support member.

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