Semiconductor process equipment

Abstract

The present application discloses a semiconductor process equipment, the disclosed semiconductor process equipment comprises a first chamber (100), a second chamber (200) and a third chamber (300), wherein the first chamber (100) and the second chamber (200) are connected and connected; the third chamber (300) is arranged around the second chamber (200), and a first cavity (A) is formed between the two, the third chamber (300) is provided with a temperature control fluid inlet (310) and a temperature control fluid outlet (320), and the first cavity (A) is used for the flow of the temperature control fluid to adjust the temperature of the second chamber (200). The above scheme can solve the problem in the semiconductor process equipment that the strip heater is difficult to completely attach to the exposed part of the chamber, resulting in a cold spot in the local part of the chamber and resulting in an unsatisfactory insulation effect.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a semiconductor processing equipment. Background Art

[0002] The temperature control of semiconductor process equipment has a great impact on the processing technology of wafers waiting for processing parts. In order to ensure the performance of process products, higher requirements are placed on the temperature stability and thermal insulation effect of the equipment. Taking vertical heat treatment equipment as an example, since the bottom of the chamber is exposed to the external environment, it is easy to exchange heat with the external environment, resulting in cold spots in the exposed part of the chamber (the cold spot is the lowest temperature part of the process chamber), and the cold spot will have an adverse effect on a variety of process processes. For example: in the SiN process of LPCVD, by-products will adhere to the cold spots, resulting in excessive product particles; in the Anneal process of water vapor, water vapor condenses in the exposed part of the chamber, causing the pressure in the chamber to fluctuate, and even work together with other corrosive gases to cause corrosion.

[0003] In the related art, a strip heater is attached to the exposed part of the chamber to ensure the temperature of the exposed part of the chamber and achieve a heat preservation effect, thereby preventing cold spots from causing adverse effects on the process of the semiconductor process equipment. However, due to the irregular shape of the exposed part of the chamber, it is difficult for the strip heater to completely adhere to the exposed part of the chamber, and the wrapping property is poor, resulting in unsatisfactory heat preservation of the exposed part of the chamber of the semiconductor process equipment. Summary of the invention

[0004] The present application discloses a semiconductor process equipment to solve the problem in the related art that it is difficult to completely attach a strip heater to the exposed portion outside a chamber, which results in a cold spot in a part of the chamber and leads to an unsatisfactory heat preservation effect.

[0005] To solve the above problems, this application adopts the following technical solutions:

[0006] The present application discloses a semiconductor process equipment, comprising a first chamber, a second chamber and a third chamber, wherein:

[0007] The first chamber and the second chamber are connected and connected; the third chamber is arranged around the second chamber, and a first cavity is formed between the two. The third chamber is provided with a temperature-control fluid inlet and a temperature-control fluid outlet. The first cavity is used for the flow of temperature-control fluid to adjust the temperature of the second chamber.

[0008] The technical solution adopted in this application can achieve the following beneficial effects:

[0009] The semiconductor process equipment disclosed in the embodiment of the present application is modified by modifying the semiconductor process equipment in the related art, so that the disclosed semiconductor process equipment includes a third chamber, and the third chamber is arranged around the second chamber, and a first cavity is formed between the two. At the same time, the third chamber is provided with a temperature-control fluid inlet and a temperature-control fluid outlet. The temperature-control fluid enters the first cavity from the temperature-control fluid inlet, and the temperature-control fluid transfers its own heat to the second chamber. Then, the temperature-control fluid flows out from the temperature-control fluid outlet, so that the temperature of the temperature-control fluid in the first cavity remains unchanged. At the same time, the third chamber does not need to be attached to the surface of the second chamber, and the third chamber can surround the second chamber, and the temperature control fluid flows in the first cavity formed by the two, and the temperature control fluid can contact the second chamber and will not be affected by the external shape of the second chamber, so that the heat of the temperature control fluid can be transferred to the second chamber, thereby avoiding the second chamber from having a cold spot. At the same time, the first chamber is at least partially located in the heating space, so that it is also difficult for the connection between the first chamber and the second chamber to have a cold spot, thereby avoiding the occurrence of condensed byproducts in the processing of the wafer waiting for the workpiece, thereby ensuring that the temperature of the accommodation space can meet the temperature requirements of the processing of the wafer waiting for the workpiece. While ensuring the process effect of the semiconductor process equipment, the present application can also provide a good insulation effect for the first chamber and the second chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the embodiments or background technologies of the present application, the following briefly introduces the drawings required for use in the embodiments or background technology descriptions. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0011] Figure 1 A partial cross-sectional view of a semiconductor process device disclosed in an embodiment of the present application at a first angle;

[0012] Figure 2 It is a partial cross-sectional view of the semiconductor process equipment disclosed in an embodiment of the present application at a second angle.

[0013] Description of reference numerals:

[0014] 100-first chamber, 110-first flange, 120-pressure ring,

[0015] 200-second chamber, 210-port, 220-second flange, 221-sealing ring,

[0016] 300-third chamber, 310-temperature control fluid inlet, 320-temperature control fluid outlet,

[0017] 400-fluid delivery device, 410-flow control module, 420-output pipe,

[0018] 500-heater,

[0019] 600-Sealed door,

[0020] 710- fluid heating device, 720- temperature sensor,

[0021] 800-Insulation layer,

[0022] 900-pressure detection module, 910-pressure measuring pipeline,

[0023] A-first cavity,

[0024] B-gap,

[0025] C-Second cavity. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0027] The technical solutions disclosed in various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0028] Please refer to Figure 1 and Figure 2 An embodiment of the present application discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes a first chamber 100, a second chamber 200 and a third chamber 300.

[0029] Both the first chamber 100 and the second chamber 200 can provide a processing place for the processing of the wafer waiting to be processed. Specifically, the first chamber 100 and the second chamber 200 are connected and connected, and the wafer waiting to be processed can be located in the accommodating space formed by the first chamber 100 and the second chamber 200, wherein the semiconductor process equipment includes a heater 500, and the first chamber 100 is at least partially located in the heating space of the heater 500, so that the heater 500 can heat the first chamber 100, thereby ensuring that the first chamber 100 can form the temperature environment required for the processing technology of the wafer waiting to be processed.

[0030] At the same time, the third chamber 300 is arranged around the second chamber 200, and a first cavity A is formed therebetween. The third chamber 300 is provided with a temperature control fluid inlet 310 and a temperature control fluid outlet 320, wherein the temperature control fluid inlet 310 and the temperature control fluid outlet 320 are both connected to the first cavity A. The first cavity A is used for the flow of temperature control fluid to adjust the temperature of the second chamber 200. Specifically, the temperature control fluid enters the first cavity A through the temperature control fluid inlet 310, and the temperature control fluid can transfer heat to the second chamber 200, thereby increasing the temperature of the internal space of the second chamber 200, and then the temperature control fluid that has transferred the heat flows out from the temperature control fluid outlet 320. The above structure enables the temperature-control fluid to flow in the first cavity A, thereby preventing the temperature-control fluid from accumulating in the first cavity A after transferring heat, thereby preventing the temperature-control fluid after cooling from absorbing heat from the second chamber 200, thereby ensuring that it is less likely for cold spots to appear in the second chamber 200, thereby ensuring that the second chamber 200 can also form the temperature environment required for the processing technology of the chip waiting for the workpiece.

[0031] During the operation of the semiconductor process equipment, the wafer waiting for the workpiece is located in the accommodation space formed by the first chamber 100 and the second chamber 200. Since the first chamber 100 is at least partially located in the heating space of the heater 500, the heater 500 heats the first chamber 100, and the heat is transferred to the internal space of the first chamber 100 through the inner wall of the first chamber 100, thereby ensuring that the first chamber 100 can form the temperature environment required for the processing of the wafer waiting for the workpiece. At the same time, the temperature control fluid enters the first cavity A through the temperature control fluid inlet 310, and the temperature control fluid transfers the heat to the second chamber 200, so that the second chamber 200 also forms a temperature environment for the wafer waiting for the workpiece. The temperature environment required by the processing technology of the workpiece to be processed, therefore, the accommodating space is composed of the internal space of the first chamber 100 and the internal space of the second chamber 200, so that the accommodating space can form the environmental temperature required by the processing technology of the wafer waiting for the workpiece to be processed, and the first chamber 100 is at least partially located in the heating space, the second chamber 200 is surrounded by the third chamber 300, and the temperature control fluid will fully contact the second chamber 200 and will not be restricted by the external shape of the second chamber 200, so that it is more difficult for the first chamber 100 and the second chamber 200 to form heat exchange with the external environment, and then it is more difficult for the first chamber 100 and the second chamber 200 to have cold spots.

[0032] The semiconductor process equipment disclosed in the embodiment of the present application is modified by modifying the semiconductor process equipment in the related art, so that the disclosed semiconductor process equipment includes a third chamber 300, and the third chamber 300 is arranged around the second chamber 200, and a first cavity A is formed between the two. At the same time, the third chamber 300 is provided with a temperature-controlled fluid inlet 310 and a temperature-controlled fluid outlet 320. The temperature-controlled fluid enters the first cavity A from the temperature-controlled fluid inlet 310, and the temperature-controlled fluid transfers its own heat to the second chamber 200. Then, the temperature-controlled fluid flows out from the temperature-controlled fluid outlet 320, so that the temperature of the temperature-controlled fluid in the first cavity A always remains unchanged. At the same time, the third chamber 300 does not need to be attached to the surface of the second chamber 200, and the third chamber 300 can surround the second chamber 200. The temperature-control fluid flows in the first cavity A formed by the two. The temperature-control fluid can contact the second chamber 200 and will not be affected by the external shape of the second chamber 200, so that the heat of the temperature-control fluid can be transferred to the second chamber 200, thereby avoiding the occurrence of cold spots in the second chamber 200. At the same time, the first chamber 100 is at least partially located in the heating space, so that it is also difficult for cold spots to appear at the connection between the first chamber 100 and the second chamber 200, thereby avoiding the occurrence of condensed byproducts in the processing technology of the wafer waiting for the workpiece, thereby ensuring that the temperature of the accommodating space can meet the temperature requirements of the processing technology of the wafer waiting for the workpiece, so that the present application can provide good insulation effect for the first chamber 100 and the second chamber 200 while ensuring the process effect of the semiconductor process equipment.

[0033] In an embodiment of the present application, the semiconductor process equipment may further include a sealed door 600. Specifically, a port 210 may be opened at one end of the second chamber 200 away from the first chamber 100, wherein the port 210 may be connected to the second chamber 200. The sealed door 600 may be arranged on the second chamber 200 to open and close the port 210. When the sealed door 600 and the port 210 are in an open state, the wafer waiting for processing can pass through the port 210 and be placed in the accommodating space; when the sealed door 600 and the port 210 are in a closed state, the sealed door 600 can prevent the heat of the second chamber 200 from being lost, thereby ensuring that the temperature in the second chamber 200 meets the temperature requirements of the processing technology of the wafer waiting for processing.

[0034] The third chamber 300 may be provided with an avoidance hole, and the sealing door 600 may be located in the space surrounded by the edge of the avoidance hole. In addition, the semiconductor process equipment may further include a driving mechanism, which may be connected to the sealing door 600. The driving mechanism may drive the sealing door 600 to approach or move away from the second chamber 200, thereby realizing automatic opening and closing of the second chamber 200 by the sealing door 600. In addition, the sealing door 600 may also carry wafers waiting for processing, so that the wafers waiting for processing can enter the accommodation space.

[0035] In the embodiment of the present application, in order to facilitate the adjustment of the flow rate of the temperature control fluid, in an optional solution, the semiconductor process equipment may further include a fluid delivery device 400. Specifically, the fluid delivery device 400 may include a flow control module 410 and an output pipe 420. The flow control module 410 may be a manual valve, a solenoid valve, a flow control valve, etc., which is not limited by the present application. The flow control module 410 may be arranged on the output pipe 420, and the output pipe 420 may be connected to the temperature control fluid inlet 310. The output pipe 420 is connected to the first cavity A. The flow control module 410 can control the open state and the closed state of the output pipe 420, so that the flow control module 410 can indirectly control whether the temperature control fluid can flow into the first cavity A.

[0036] During the use of the fluid delivery device 400, since different processing techniques for wafers waiting to be processed require different ambient temperatures, the semiconductor process equipment needs to adjust the temperature to adapt to the processing techniques for wafers waiting to be processed. Specifically, the flow control module 410 adjusts the flow of the temperature-controlled fluid entering the first cavity A. By detecting the temperature change of the second chamber 200 under different amounts of temperature-controlled fluid in the first cavity A, the staff can determine the gas flow rate for improving the temperature uniformity of the second chamber 200, thereby being able to adapt to different processing techniques for wafers waiting to be processed.

[0037] In a further technical solution, the semiconductor processing equipment may also include a fluid heating device 710. Specifically, the fluid heating device 710 may be connected to the fluid conveying device 400. The fluid heating device 710 may be used to adjust the temperature of the temperature-control fluid, wherein the fluid heating device 710 heats the temperature-control fluid, and then the fluid heating device 710 transfers the heated temperature-control fluid to the fluid conveying device 400, so that before the temperature-control fluid enters the first cavity A, the temperature of the temperature-control fluid can meet the requirements of the second chamber 200.

[0038] In an embodiment of the present application, in order to enable the semiconductor process equipment to more accurately control the temperature in the accommodation space, in an optional solution, the semiconductor process equipment may also include a temperature sensor 720 and a first controller. Specifically, the sealing door 600 may form a gap B with the inner wall of the avoidance hole. The temperature sensor 720 is arranged on the end face where the port 210 is located and is located in the gap B. The temperature sensor 720 is used to detect the actual temperature of the second chamber 200, which is convenient for staff to observe and record.

[0039] In the specific detection process, the temperature sensor 720 is used to detect the actual temperature of the end surface where the port 210 is located, that is, the actual temperature at the gap B. Since the gap B is exposed, the actual temperature at the gap B is the lowest temperature of the second chamber 200. This ensures that the lowest temperature of the second chamber 200 is higher than the condensation temperature of the byproducts in the processing of the wafer waiting for the workpiece. In addition, installing the temperature sensor 720 in the gap B can make full use of the assembly gap of the semiconductor process equipment, which is conducive to a more compact structure and is also convenient for disassembly and assembly of the temperature sensor 720 during the inspection process.

[0040] At the same time, the first controller can be used to adjust the temperature of the temperature-controlling fluid. Specifically, the first controller can be electrically connected to the fluid heating device 710. When the actual temperature deviates from the preset temperature, the first controller controls the fluid heating device 710 to increase or decrease the temperature of the temperature-controlling fluid, wherein the preset temperature is the temperature required for the processing technology of the chip waiting for the workpiece. If the actual temperature detected by the temperature sensor 720 is lower than the temperature required for the processing technology of the chip waiting for the workpiece, the first controller controls the fluid heating device 710 to increase the temperature of the temperature-controlling fluid before entering the first cavity A. On the contrary, if the actual temperature detected by the temperature sensor 720 is higher than the temperature required for the processing technology of the chip waiting for the workpiece, the first controller controls the fluid heating device 710 to lower the temperature of the temperature-controlling fluid before entering the first cavity A.

[0041] In the embodiment of the present application, the semiconductor process equipment may further include a pressure detection module 900 and a second controller. Specifically, the pressure detection module 900 may be arranged on a pressure measuring pipe 910, and the pressure measuring pipe 910 may be connected to the first cavity A. The temperature control fluid may flow to the pressure measuring pipe 910, thereby facilitating the detection of the pressure detection module 900. The pressure detection module 900 may be used to detect the actual pressure of the first cavity A. The second controller is electrically connected to the flow control module 410. The semiconductor process equipment needs to set a preset pressure in advance. The preset pressure may be the maximum value of the safety pressure of the first cavity A. When the actual pressure is greater than the preset pressure, the second controller controls the flow control module 410 to close or reduce the opening of the flow control module 410, thereby avoiding the actual pressure being too high and affecting the processing of the wafer waiting for the workpiece, thereby avoiding the scrapping of the wafer waiting for the workpiece.

[0042] During the operation of the semiconductor process equipment, the semiconductor process equipment detects the actual pressure in the first cavity A through the pressure detection module 900. When the connection position between the first chamber 100 and the second chamber 200 is loose, the pressure detector 920 can detect the change in the actual pressure in the first cavity A. When the actual pressure is greater than the preset pressure, the second controller controls the flow control module 410 to close. Of course, if there is a slight leak in the first chamber 100 and the actual pressure is less than the preset pressure, the process can still be continued to avoid the scrapping of the wafer waiting for the workpiece. It should be noted that the gas leaked to the second chamber 200 will also be discharged with the temperature-controlled airflow, which will not affect other devices or cause safety accidents.

[0043] In the embodiment of the present application, in order to improve the firmness of the connection between the first chamber 100 and the second chamber 200, in an optional solution, the first chamber 100 may be provided with a first flange 110, and the second chamber 200 may be provided with a second flange 220. Specifically, the first flange 110 and the second flange 220 may be fixedly connected, wherein the first flange 110 and the second flange 220 may be fixedly connected by bonding, welding, etc. In an optional manner, the first flange 110 may be provided with a plurality of first through holes, and the second flange 220 may be provided with a plurality of second through holes, and the plurality of first through holes may correspond to the plurality of second through holes one by one. The first flange 110 may also include a plurality of screws and a plurality of nuts, and the plurality of screws pass through the plurality of first through holes and the plurality of second through holes one by one, and the plurality of screws and the plurality of nuts are threadedly matched one by one. The above structure can improve the firmness of the connection between the first chamber 100 and the second chamber 200.

[0044] In a further technical solution, a first receiving groove may be provided on the second flange 220. Specifically, a sealing ring 221 may be provided in the first receiving groove. The sealing ring 221 may be elastically clamped between the first flange 110 and the second flange 220, and the sealing ring 221 is sealed and matched with the first flange 110. The above structure can improve the sealing performance of the connection between the first chamber 100 and the second chamber 200, thereby preventing gas leakage in the first chamber 100 and the second chamber 200 when performing a processing process of a wafer waiting for a workpiece.

[0045] In an embodiment of the present application, the diameter of the first flange 110 may be smaller than the diameter of the second flange 220. Specifically, the first chamber 100 may further include a pressure ring 120. The pressure ring 120 may be provided with a second accommodating groove. The first flange 110 is at least partially located in the second accommodating groove, thereby avoiding interference between the pressure ring 120 and other components of the semiconductor process equipment. At the same time, the pressure ring 120 can also provide protection for the first flange 110, and the gravity of the pressure ring 120 can provide a clamping force to the first flange 110, thereby improving the sealing of the connection between the first chamber 100 and the second chamber 200. The pressure ring 120 can be abutted against the second flange 220, and the pressure ring 120 is also provided with a first receiving groove. The third chamber 300 can be located in the first receiving groove and form a second cavity C with the second flange 220. The second cavity C is connected to the first cavity A, wherein one end of the third chamber 300 can be connected to the inner wall of the first receiving groove, and the third chamber 300, the second flange 220 and the first receiving groove can form the second cavity C, so that the temperature control fluid can directly transfer heat to the connection position between the first chamber 100 and the second chamber 200, thereby further avoiding the occurrence of cold spots at the connection between the first chamber 100 and the second chamber 200, thereby further improving the process effect of the semiconductor process equipment.

[0046] In a further technical solution, the temperature control fluid inlet 310 can be connected to the second cavity C, and the temperature control fluid outlet 320 can be connected to the first cavity A. Specifically, the temperature control fluid inlet 310 and the temperature control fluid outlet 320 are respectively located on opposite sides of the second chamber 200, so that the flow path of the temperature control fluid in the first cavity A is lengthened, and heat can be fully conducted in the first cavity A and the second cavity C, so that the second chamber 200, the first flange 110 and the second flange 220 can all obtain the insulation effect.

[0047] In an embodiment of the present application, the semiconductor process equipment may further include a thermal insulation layer 800. Specifically, the thermal insulation layer 800 may be attached to the inner wall of the third chamber 300. The thermal insulation layer 800 has a non-heat-conducting property, which can ensure that the heat of the temperature-control fluid is only transferred to the second chamber 200, and not to the inner wall of the third chamber 300. On the one hand, it can reduce the external temperature of the third chamber 300, and on the other hand, it can prevent the heat loss of the temperature-control fluid, thereby improving the insulation effect of the second chamber 200.

[0048] The above embodiments of the present application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0049] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A semiconductor process equipment, characterized in that: The invention comprises a first chamber (100), a second chamber (200), a third chamber (300) and a heater (500), wherein: The first chamber (100) and the second chamber (200) are connected and connected; the third chamber (300) is arranged around the second chamber (200), and a first cavity (A) is formed between the two; the third chamber (300) is provided with a temperature control fluid inlet (310) and a temperature control fluid outlet (320); the first cavity (A) is used for the flow of the temperature control fluid to adjust the temperature of the second chamber (200); The first chamber (100) is at least partially located in a heating space of the heater (500).

2. The semiconductor process equipment according to claim 1, characterized in that: The semiconductor process equipment further comprises a sealed door (600); a port (210) is provided at one end of the second chamber (200) away from the first chamber (100); the port (210) is communicated with the second chamber (200); the sealed door (600) is arranged on the second chamber (200) for opening and closing the port (210); an avoidance hole is provided in the third chamber (300); and the sealed door (600) is located in a space surrounded by the edge of the avoidance hole.

3. The semiconductor process equipment according to claim 2, characterized in that: The semiconductor process equipment further comprises a fluid conveying device (400), wherein the fluid conveying device (400) comprises a flow control module (410) and an output tube (420), wherein the flow control module (410) is arranged on the output tube (420), the output tube (420) is connected to the temperature control fluid inlet (310), and the output tube (420) is connected to the first cavity (A).

4. The semiconductor process equipment according to claim 3, characterized in that: The semiconductor process equipment further comprises a fluid heating device (710), wherein the fluid heating device (710) is connected to the fluid conveying device (400), and the fluid heating device (710) is used to adjust the temperature of the temperature-control fluid.

5. The semiconductor process equipment according to claim 4, characterized in that: The semiconductor process equipment further includes a temperature sensor (720) and a first controller; A gap (B) is formed between the sealing door (600) and the inner wall of the avoidance hole, and the temperature sensor (720) is arranged on the end surface where the port (210) is located and is located in the gap (B); The temperature sensor (720) is used to detect the actual temperature of the second chamber (200), and the first controller is electrically connected to the fluid heating device (710). When the actual temperature deviates from a preset temperature, the first controller controls the fluid heating device (710) to increase or decrease the temperature of the temperature-control fluid.

6. The semiconductor process equipment according to claim 3, characterized in that: The semiconductor process equipment further comprises a pressure detection module (900) and a second controller, wherein the pressure detection module (900) is arranged on a pressure measuring pipeline (910), and the pressure measuring pipeline (910) is connected to the first cavity (A); The pressure detection module (900) is used to detect the actual pressure of the first cavity (A); The second controller is electrically connected to the flow control module (410), and when the actual pressure is greater than the preset pressure, the second controller controls the flow control module (410) to close or reduces the opening of the flow control module (410).

7. The semiconductor process equipment according to claim 1, characterized in that: The first chamber (100) is provided with a first flange (110), and the second chamber (200) is provided with a second flange (220), and the first flange (110) and the second flange (220) are fixedly connected.

8. The semiconductor process equipment according to claim 7, characterized in that: The diameter of the first flange (110) is smaller than the diameter of the second flange (220), the first chamber (100) further comprises a pressure ring (120), the pressure ring (120) is provided with a second receiving groove, the first flange (110) is at least partially located in the second receiving groove, the pressure ring (120) is in contact with the second flange (220), the pressure ring (120) is further provided with a first receiving groove, the third chamber (300) is located in the first receiving groove, and forms a second cavity (C) with the second flange (220), and the second cavity (C) is connected with the first cavity (A).

9. The semiconductor process equipment according to claim 8, characterized in that: The temperature control fluid inlet (310) is in communication with the second cavity (C), and the temperature control fluid outlet (320) is in communication with the first cavity (A). The temperature control fluid inlet (310) and the temperature control fluid outlet (320) are respectively located on opposite sides of the second chamber (200).

10. The semiconductor process equipment according to any one of claims 1 to 9, characterized in that: The semiconductor process equipment further comprises a heat insulating layer (800), wherein the heat insulating layer (800) is attached to the inner wall of the third chamber (300).

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